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CN1774667A - 用在浸没式平版印刷方法中自动聚焦部件的光学配置 - Google Patents

用在浸没式平版印刷方法中自动聚焦部件的光学配置 Download PDF

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CN1774667A
CN1774667A CN 200480010389 CN200480010389A CN1774667A CN 1774667 A CN1774667 A CN 1774667A CN 200480010389 CN200480010389 CN 200480010389 CN 200480010389 A CN200480010389 A CN 200480010389A CN 1774667 A CN1774667 A CN 1774667A
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optical
arrangement
lithography
autofocus
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W·T·诺瓦克
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株式会社尼康
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Exposure apparatus for microlithography
    • G03F7/70216Systems for imaging mask onto workpiece
    • G03F7/70258Projection system adjustment, alignment during assembly of projection system
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2041Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Exposure apparatus for microlithography
    • G03F7/70216Systems for imaging mask onto workpiece
    • G03F7/70341Immersion
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Exposure apparatus for microlithography
    • G03F7/70483Information management, control, testing, and wafer monitoring, e.g. pattern monitoring
    • G03F7/70616Wafer pattern monitoring, i.e. measuring printed patterns or the aerial image at the wafer plane
    • G03F7/70641Focus
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Exposure apparatus for microlithography
    • G03F7/708Construction of apparatus, e.g. environment, hygiene aspects or materials
    • G03F7/7095Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958Optical materials and coatings, e.g. with particular transmittance, reflectance
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7023Aligning or positioning in direction perpendicular to substrate surface
    • G03F9/7026Focusing
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7023Aligning or positioning in direction perpendicular to substrate surface
    • G03F9/7034Leveling

Abstract

在浸没式平版印刷装置上提供一种自动聚焦单元,在工件目标表面的上面具有流体,像的图案经过该流体投射到该目标表面上。自动聚焦单元具有光学部件例如投射透镜,该透镜配置在目标表面的相反侧,位于该目标表面的上面。自动聚焦光源配置成以规定的角度倾斜地投射光束,使该光束穿过流体,并在规定的偏转位置由工件目标表面偏转,该偏转位置位于光学部件的下面。接收器接收和分析该偏转光。在该光束的光路上配置校正透镜,以便校正该光束的传播。

Description

用在浸没式平版印刷方法中自动聚焦部件的光学配置

发明背景本发明涉及浸没式平版印刷方法中所用自动聚焦部件的光学配置。

今天所用的半导体平版印刷系统中,通常将光束以较小的倾角投射在硅晶片的表面上,然后在晶片表面偏转之后,检测光束的特性,由此完成自动聚焦和自动校平操作(AF/AL),通过偏转光束的光学处理和电学处理确定晶片高度。该光束在投射透镜的最后一个部件的下面穿过。光源和接收光学系统通常靠近投射光学系统安装位置,装在系统的稳定部分。

在浸没式平版印刷方法中,在投射透镜的最后一个表面和晶片之间的空间中充满液体例如水。在水的边缘部分,通常在透镜的边缘或者靠近透镜边缘的支承件上,液体-空气界面的形状不是很确定的,而且变化很快。因此,使AF/AL光束穿过这个界面,而又不受显著干扰,不造成信号损失和不影响该束的性能,这是不可能的。

因此本发明的目的是提供一种将AF/AL光束引入到液体层而又不发生这种干扰的方法,从而达到要求的光学准确度和稳定性。

具体是,本发明的目的是提供一种装置和方法,使得AF/AL光束可以用在如常规平版印刷方法中,而又不破坏性影响透镜边缘的液体浸没界面。

发明概要本发明的自动聚焦单元用于浸没式平版印刷装置,该装置一般说成为不仅包括:配置成可以固定光栅的光栅台;配置成可以固定工件的工作台,该工件具有目标表面;光学系统,包括照明光源和光学部件例如透镜,该透镜配置在工件的相反侧,位于工件的上面,可以利用上述照明光源发射的光线使光栅的图案成像在工件上;而且还包括:流体输送装置,用于将流体输送到光学部件和工件之间确定的空间中,使得该流体既接触光学部件,又接触工件的目标表面。配置在工件相对侧的光学部件可以用作为自动聚焦单元本身的构件,该单元的特征还在于包括自动聚焦光源和接收器,前者按规定的角度倾斜地投射光束,使得该光束穿过流体,并在规定的偏转位置由工件的目标表面偏转,该偏转位置位于光学部件的下面,后者用于接收和分析由目标表面偏转的光束。最好在自动聚焦光源投射的光束光路上配置校正透镜,以便校正该光束的传播。

作为另一实施例,在工件相反侧的光学部件可以在其两个相互相对的侧部切开,并在这些切口下面放置光学透明的楔形部件,使得自动聚焦光源射出的光束穿过这些楔形部件,因为该光束穿过流体,在工件的目标表面上受到偏转,然后到达接收区,而完全不穿过该光学部件。在楔形部件和光学部件之间的间隙中可能形成气泡,为了避免这种可能产生气泡的问题,用适当的物质充满该间隙,并将间隙作得相当窄,例如小于2.0mm,利用毛细作用力使该间隙充满流体,或者配置一种机构,形成小的抽吸力,使得流体可以通过间隙向上移动,或者输送流体,使得间隙被流体充满。由自动聚焦光源投射的光束从楔形部件的内部折射进入流体的边界面不一定平行于工件的目标表面,而可以适当倾斜,这取决于物质的折射率,该折射率影响自动聚焦单元的设计。

附图简要说明下面结合附图进行说明,根据这些说明可以更好地理解本发明以及本发明的其他目的和优点,这些附图是:图1是示意截面图,示出包含本发明的浸没式平版印刷装置;图2是工艺流程图,示出采用本发明图1所示装置制造半导体器件所用的例示性工艺;图3是流程图,示出按本发明制造半导体器件时,图2所示的晶片处理步骤;图4是示意侧视截面图,示出实施本发明的一种自动聚焦单元;

图5是示意侧视截面图,示出实施本发明的另一种自动聚焦单元;图6是放大图,示出图5的圆圈部分IV;图7、8和9是示意侧视截面图,示出实施本发明的不同实施例的其他自动聚焦单元的一些部分。

在所有附图中,相当或者类似的部件和零件有时在不同的图中用相同的编号表示,因此不需要进行重复说明。

具体实施例的详细说明图1示出浸没式平版印刷装置100的一般结构,该装置包括实施本发明自动聚焦部件的光学配置。

如图1所示,该浸没式平版印刷装置100包括照明光学单元1,该单元包括光源例如KrF激元激光单元、光学积分器(或者光学均匀器)和透镜,该单元用于发射波长为248nm的脉冲紫外光IL,该紫外光入射在光栅R的图案上。将光栅R上的图案以规定的放大倍数(例如1/4倍或者1/5倍),通过远心光投射单元PL投射在涂有光致抗蚀剂的晶片W上。该脉冲光IL还可以是波长为193nm的ArF激元激光、波长为157nm的F2激光,或者波长为365nm的汞灯i谱线。在下面的说明中,参考图1所示的具有X、Y和Z轴的坐标系统说明平版印刷装置100结构和作用的方向。为了便于说明,图1中仅由位于晶片W相对侧的最后一级光学部件(例如透镜)4和包含所有其他构件的圆筒外壳3示出光投射单元PL。

光栅R支承在光栅台RST上,该台包括使光栅R沿X方向、Y方向移动和绕Z轴转动一定量的机构。利用激光干涉仪(未示出)实时检测光栅R在光栅台RST上的两维位置和取向,主控单元14根据由此得到的检测数据定位该光栅。

晶片W装在Z台9的晶片支架(未示出)上,以便控制晶片W的聚焦位置(沿Z轴的移动)和倾斜角。该Z台9固定于XY台10,该XY台适合于在XY台平面内基本上平行于光投射单元PL的成像表面运动。该XY台10固定在底座11上。因此Z台9的作用是使晶片的表面与光投射单元PL的成像表面重合,方法是用自动聚焦和自动校平方法调节晶片W的聚焦位置(沿Z轴的移动)和倾斜角,XY台10的作用是调节晶片W在X方向和Y方向的位置。

可以参照固定于Z台9的活动反射镜12,利用另一个激光干涉仪13监测Z台9的两维位置和方向(以及晶片的两维位置和方向)。将基于这种监测结果的控制数据从主控单元14输送到台驱动单元15,该驱动单元将按照接收的控制数据控制Z台9和XY台10的运动。在曝光时,按照光栅R上的图案以重复步进方式使光线从晶片上不同曝光位置的一个位置顺序移到另一位置。

图1所示的平版印刷装置100是一种浸没式印刷装置,该装置至少在将光栅R的图像拷贝在晶片W上时,适合于使规定类型的液体(或者“浸没液体”)7例如水充满晶片W表面和光投射单元PL最后一级光学部件4下表面之间的空间。

光投射单元PL最后一级光学部件4固定于圆筒形外壳3。在一种选择性实施例中,该最后一级光学部件4可以取下来,以便进行清洁和维修。

在温控状态下,用液体供应单元5将流体7输送到晶片W上面的空间中,并用液体回收单元6收集该液体7,该液体供应单元包括水桶、压力泵和温控装置(未单独示出)。液体7的温度被调节到大约等于其中配置平版印刷装置100本身的室中的温度。编号21表示液体源出口,供应单元5经该出口输送液体7。编号23表示回收入口,流体7通过该入口收集到回收单元6中。然而应当记住,图1所示的结构不限制应用本发明除去流体方法和机构的浸没式平版印刷装置的范围。换言之,本发明的自动聚焦单元可以装在很多不同类型的浸没式平版印刷装置中,具体是应当记住,可以以各种各样方式设计围绕光投射单元PL的流体源出口和回收入口21和23的数目和配置,以便形成浸没流体7的平衡流动和快速回收。

图4示出本发明的聚焦单元5(未示于图1),该单元装在浸没式平版印刷系统例如图1中用100示出的装置中,但本发明不限制安装该单元的具体系统的类型。在此例中,光投射单元PL的最后级光学部件4是半球形的投射透镜,其平表面朝下,对着晶片W的上表面(“目标表面”),该平表面与目标表面之间形成一个空间。该自动聚焦单元51这样配置,使其AF/AL光束54相对于晶片W的目标表面倾斜地射出,穿过该透镜4的下部边缘部分,然后折射进入到浸没流体7,从而在规定的偏转位置55由晶片W的目标表面偏转。用于接收和分析偏转的AF/AL光束54的接收器52恰当地配置在光投射单元PL的相反侧面。编号53分别表示称作为校正透镜的部件,该透镜配置在AF/AL光束54的光路上,用于校正光的传播。因为透镜4和液体7之间的界面是清晰的,基本上没有气泡,所以该光束基本上不受阻碍,可以提供很好的信号,而使检测保持很高的准确度。在图4中虚线表示曝光的光锥,或者曝光区域的边界。

图5示出本发明另一实施例的另一自动聚焦单元60。图5所示单元的部件与上述部件相同的部件用相同的编号表示。图5所示的单元60其特征在于,在分别面向自动聚焦单元51和接收器52的两个位置切去光投射单元PL最后级光学部件4的下表面。这些切开的表面最好是平的,如图5所示,但该最后级光学部件4在作用上仍基本上是半球形透镜。在这些切面的下面,在透镜4的两侧分别放置光学透明的称作为楔形部件61和62的部件,部件61位于自动聚焦光源51的一侧,而部件61位于接收器52的一侧。这样设计该切面和楔形部件61和62,使得自动聚焦光源51发出的AF/AL光束54穿过楔形部件61,折射进入浸没液体7,而不穿过透镜4,在偏转位置55由晶片W的目标表面偏转后,将折射进入楔形部件62,并由接收器52接收,仍不穿过透镜4。因为楔形部件可以用不同于透镜4的材料例如光学玻璃制作,所以此实施例是有利的。

从校正光学性能和在浸没液体7中产生气泡的观点看,在楔形部件61和62分别与透镜4之间的下部界面是很重要的。参考图6,该图更详细示出楔形部件61紧邻透镜4的那一部分,在其间的间隙D是可能产生气泡的根源,该气泡可能带入透镜4的下面,从而负面影响其光学性能。

克服此问题的一个方法是,用适当的物质充满该间隙,或者将楔形部件61紧压到与透镜4接触,使得间隙D基本上变成0,因此不影响液体界面。另一种解决办法是使间隙D保持在基本上等于或者小于2.0mm,通过毛细作用力使液体7充满间隙,甚至晶片W在透镜4下面运动时,也能保持这种充满。第三种解决办法是提供少量的抽吸力,使液体7在间隙D中向上移动,从而防止空气向下移动,如图7所示,在该图中,编号70表示用于提供这种抽吸力的空气泵。图8示出再一种解决方法,在这种解决办法中,在间隙D的开口上面配置液体7的液源72,使间隙D由流体7充满。

本发明已参考有限数目的配置进行说明,但这些配置不限制本发明的范围。在本发明的范围内,可以进行很多改型和变化。例如楔形部件61和62的形状不一定是图6所示的形状。例如,取决于相应于浸没液体7折射率和楔形部件61材料的要求AF/AL光束54入射角,最好形成如图9所示的楔形部件61,该楔形部件具有倾斜表面部分64,使得穿过楔形部件61的AF/AL光束54将折射进入浸没流体7,不一定穿过图6所示的水平边界面,而是穿过适当倾斜的表面部分64。这对于设计实施本发明的配置提供了灵活性。

下面参考图2,说明采用装有液体入口和回收系统的实施本发明的浸没式平版印刷装置制造半导体器件的工艺。在步骤301中,设计器件的功能和操作性能。随后在步骤302中,按照上述设计步骤设计具有图案的掩模(光栅),而平行的步骤303中,用硅材料制作晶片。而在步骤304中,采用光刻系统例如上述系统将步骤302中设计的掩模图案曝光在步骤303中制作的晶片上。在步骤305中,组装半导体器件(包括切片操作、焊接操作和包装操作),最后在步骤306中检测该器件。

图3示出在制造半导体情况下,上述步骤304的详细工艺流程例子。在步骤311(氧化步骤)中,氧化该晶体表面。在步骤312(CVD步骤)中,在晶片表面上形成绝缘膜。在步骤313(电极形成步骤)中,用蒸气沉积法在晶片上形成电极。在步骤314(离子注入步骤)中,将离子注入到晶片中。上述步骤311-314在晶片处理中形成晶片的预处理步骤,可以按照工艺要求,对各个步骤进行选择。

在晶片处理的各个阶段,在已经完成上述预处理步骤之后,可以进行以下的后处理步骤。在后处理步骤期间,首先在步骤315(形成光致抗蚀剂步骤)中,将光致抗蚀剂涂在晶片上。随后在步骤316(曝光步骤)中,采用上述曝光装置将掩模光栅的电路图案转移到晶片上,然后在步骤317(显影步骤)中,显影该曝光的晶片,在步骤318(腐蚀步骤)中,用腐蚀方法除去除残留光致抗蚀剂(已曝光的材料表面)外的那部分抗蚀剂。在步骤319(除去抗蚀剂的步骤)中,除去腐蚀后留下的不需要的抗蚀剂。随后通过重复这些预处理和后处理步骤形成多个电路图案。

尽管已根据若干优选实施例说明本发明的平版印刷系统,但是在本发明范围中,还存在很多变更、置换和各种可替代的等效部件。因此还应当看出,还存在很多其他的能够实施本发明装置和方法的方式。因此,以下所附的权利要求书可以解释为包括符合本发明真正精神和范围的所有这种变更、置换和可替代的等效部件。

Claims (40)

1.一种装置,包括:具有第一表面的工件;光学部件,靠近工件的第一表面配置,该光学部件作成为可以将像投射在第一表面上,在工件的第一表面和光学元件之间存在间隙,该间隙基本上用浸没流体充满;自动聚焦系统,包括:自动聚焦光源,该光源作成为可以发射光束,该光束穿过浸没流体射到工件的第一表面上;接收器,该接收器作成为可以接收从工件第一表面上偏转的光束。
2.如权利要求1所述的装置,其特征在于,还包括透明部件,该透明部件配置在自动聚焦光源和浸没流体之间,该透明部件作成为可以使该光束穿过该透明部件和浸没流体之间的界面。
3.如权利要求2所述的装置,其特征在于,该透明部件作成为可以控制该光束在该透明部件和浸没流体之间界面上的折射。
4.如权利要求3所述的装置,其特征在于,在该界面上该光束的折射角在0-90°范围内。
5.如权利要求2所述的装置,其特征在于,该透明部件用一种材料制作,该材料选自以下一组材料,这组材料由玻璃、塑料、氟化钙和熔融石英组成。
6.如权利要求2所述的装置,其特征在于,该透明部件是光学部件。
7.如权利要求2所述的装置,其特征在于,该透明部件靠近该光学部件配置。
8.如权利要求2所述的装置,其特征在于,该透明部件具有一种构形,这种构形选自一组构形,这组构形由长方形、方形、椭圆形、楔形和球形组成。
9.如权利要求7所述的装置,其特征在于,在该透明部件和光学部件之间提供流体。
10.如权利要求7所述的装置,其特征在于,在透明部件和光学部件之间的空间中形成真空。
11.如权利要求7所述的装置,其特征在于,还包括形成抽吸力的机构,以便使浸没流体通过该透明部件和光学部件之间的空间向上移动,从而防止外部空气进入该空间。
12.如权利要求7所述的装置,其特征在于,还包括流体输送装置,该装置作成为可以向该透明部件和光学部件之间的空间输送流体。
13.一种浸没式印刷方法,包括以下步骤:形成具有第一表面的工件;靠近该工件第一表面定位光学部件;通过该光学部件将像投射在第一表面上,在工件的第一表面和光学部件之间形成间隙;用浸没流体完全充满该间隙;使自动聚焦光源的自动聚焦光束穿过浸没流体,射到工件的第一表面上;用接收器接收从工件第一表面偏转的光束。
14.如权利要求13所述的方法,其特征在于,还包括将透明部件配置在自动聚焦光源和浸没流体之间,该透明部件作成为可以使光束穿过该透明部件和浸没流体之间的界面。
15.如权利要求14所述的方法,其特征在于,该透明部件作成为可以控制光束在透明部件和浸没流体之间界面上的折射。
16.如权利要求15所述的方法,其特征在于,该光束在该界面上的折射角在0-90°之间。
17.如权利要求14所述的方法,其特征在于,该透明部件用一种材料制作,该材料选自一组材料,这组材料由玻璃、塑料、氟化钙和熔融石英组成。
18.如权利要求14所述的方法,其特征在于,该透明部件是光学部件。
19.如权利要求14所述的方法,其特征在于,该透明部件紧邻光学部件配置。
20.如权利要求14所述的方法,其特征在于,该透明部件具有一种构形,该构形选自一组构形,该组构形由长方形、方形、椭圆形、楔形和球形组成。
21.如权利要求14所述的方法,其特征在于,还包括向透明部件和光学部件之间输送液体的步骤。
22.如权利要求19所述的方法,其特征在于,还包括在透明部件和光学部件之间的空间中形成真空的步骤。
23.如权利要求19所述的方法,其特征在于,还包括提供一种形成抽吸力的机构,以便使浸没流体通过透明部件和光学部件之间的空间向上移动,以防止外部空气进入该空间。
24.如权利要求19所述的方法,其特征在于,还包括配置输送流体机构的步骤,以便向透明部件和光学部件之间的空间输送流体。
25.一种浸没式平版印刷装置,包括:配置成可以固定光栅的光栅台;工作台,配置成可以固定具有第一表面的工件;光学系统,包括照明光源和光学部件,上述光学部件靠近工件的第一表面配置,并作成为可以将像投射第一表面上,在工件的第一表面和光学部件之间有间隔开的间隙,该间隙完全由浸没流体充满;自动聚焦系统,包括自动聚焦光源和接收器,前者可以发射光束,该光束通过浸没流体射到工件的第一表面上,后者用于接收从工件第一表面偏转的光束。
26.如权利要求25所述的装置,其特征在于,还包括配置在自动聚焦光源和浸没流体之间的透明部件,该透明部件作成为可以使该光束穿过透明部件和浸没流体之间的界面。
27.如权利要求26所述的装置,其特征在于,该透明部件作成为可以控制该光束在透明部件和浸没流体之间界面上的折射。
28.如权利要求27所述的装置,其特征在于,该光束在该界面上的折射角在0-90°范围内。
29.如权利要求26所述的装置,其特征在于,该透明部件由一种材料制作,该材料选自一组材料,该组材料由玻璃、塑料、氟化钙和熔融石英玻璃组成。
30.如权利要求26所述的装置,其特征在于,该透明部件是光学部件。
31.如权利要求26所述的装置,其特征在于,该透明部件靠近光学部件配置。
32.如权利要求26所述的装置,其特征在于,该透明部件具有一种构形,该构形选自一组构形,这种构形由长方形、方形、椭圆形、楔形和球形组成。
33.如权利要求31所述的装置,其特征在于,在透明部件和光学部件之间提供流体。
34.如权利要求31所述的装置,其特征在于,在透明部件和光学部件之间的空间中形成真空。
35.如权利要求31所述的装置,其特征在于,还包括形成抽吸力的机构,使得浸没流体可以通过透明部件和光学部件之间的空间向上移动,从而防止外面的空气进入到该空间。
36.如权利要求31所述的装置,其特征在于,还包括输送流体的机构,该机构作成为可以向透明部件和光学部件之间的空间输送流体。
37.一种用权利要求25所述浸没式平版印刷装置制造的制品。
38.一种晶片,在该晶片上,用权利要求25所述的浸没式平版印刷装置形成像。
39.用平版印刷工艺制造一种制品的方法,其特征在于,该平版印刷工艺采用权利要求25所述的浸没式平版印刷装置。
40.一种用平版印刷工艺在晶片上形成图案的方法,其特征在于,该平版印刷工艺采用权利要求25所述的浸没式平版印刷系统。
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101140426B (zh) 2006-09-07 2010-06-09 Asml荷兰有限公司 光刻设备和器件制造方法

Families Citing this family (124)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7362508B2 (en) * 2002-08-23 2008-04-22 Nikon Corporation Projection optical system and method for photolithography and exposure apparatus and method using same
JP3953460B2 (ja) 2002-11-12 2007-08-08 エーエスエムエル ネザーランズ ビー.ブイ. リソグラフィ投影装置
US7213963B2 (en) 2003-06-09 2007-05-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
CN100470367C (zh) 2002-11-12 2009-03-18 Asml荷兰有限公司 光刻装置和器件制造方法
US9482966B2 (en) 2002-11-12 2016-11-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR100588123B1 (ko) 2002-11-12 2006-06-09 에이에스엠엘 네델란즈 비.브이. 리소그래피장치 및 디바이스제조방법
KR20050062665A (ko) 2002-12-10 2005-06-23 가부시키가이샤 니콘 노광장치 및 디바이스 제조방법
KR101037057B1 (ko) 2002-12-10 2011-05-26 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
JP4352874B2 (ja) * 2002-12-10 2009-10-28 株式会社ニコン 露光装置及びデバイス製造方法
US7948604B2 (en) 2002-12-10 2011-05-24 Nikon Corporation Exposure apparatus and method for producing device
CN101424883B (zh) 2002-12-10 2013-05-15 株式会社尼康 曝光设备和器件制造法
US7242455B2 (en) 2002-12-10 2007-07-10 Nikon Corporation Exposure apparatus and method for producing device
DE10261775A1 (de) 2002-12-20 2004-07-01 Carl Zeiss Smt Ag Vorrichtung zur optischen Vermessung eines Abbildungssystems
CN104678715B (zh) 2003-02-26 2017-05-17 株式会社尼康 曝光方法以及器件制造方法
KR101181688B1 (ko) 2003-03-25 2012-09-19 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
EP1612850B1 (en) 2003-04-07 2009-03-25 Nikon Corporation Exposure apparatus and method for manufacturing a device
KR20110104084A (ko) 2003-04-09 2011-09-21 가부시키가이샤 니콘 액침 리소그래피 유체 제어 시스템
EP2921905B1 (en) 2003-04-10 2017-12-27 Nikon Corporation Run-off path to collect liquid for an immersion lithography apparatus
CN104597717B (zh) 2003-04-10 2017-09-05 株式会社尼康 包括用于沉浸光刻装置的真空清除的环境系统
KR20170064003A (ko) 2003-04-10 2017-06-08 가부시키가이샤 니콘 액침 리소그래피 장치용 운반 영역을 포함하는 환경 시스템
KR101577555B1 (ko) 2003-04-11 2015-12-14 가부시키가이샤 니콘 액침 리소그래피 머신에서 웨이퍼 교환동안 투영 렌즈 아래의 갭에서 액침 액체를 유지하는 장치 및 방법
JP4582089B2 (ja) 2003-04-11 2010-11-17 株式会社ニコン 液浸リソグラフィ用の液体噴射回収システム
CN101825847B (zh) 2003-04-11 2013-10-16 株式会社尼康 用于沉浸式光刻光学系统的清洗方法
JP2006523958A (ja) 2003-04-17 2006-10-19 株式会社ニコン 液浸リソグラフィで使用するためのオートフォーカス素子の光学的構造
KR101521407B1 (ko) 2003-05-06 2015-05-18 가부시키가이샤 니콘 투영 광학계, 노광 장치 및 노광 방법
US7348575B2 (en) * 2003-05-06 2008-03-25 Nikon Corporation Projection optical system, exposure apparatus, and exposure method
JP4115964B2 (ja) 2003-05-13 2008-07-09 エーエスエムエル ネザーランズ ビー.ブイ. リソグラフィ装置およびデバイス製造方法
EP2466616A3 (en) 2003-05-23 2012-10-03 Nikon Corporation Exposure apparatus and method for producing device
EP3048487B1 (en) 2003-05-23 2017-03-29 Nikon Corporation Immersion exposure method and apparatus, and method for producing a device
KR101618419B1 (ko) 2003-05-28 2016-05-04 가부시키가이샤 니콘 노광 방법, 노광 장치, 및 디바이스 제조 방법
EP2261742A3 (en) 2003-06-11 2011-05-25 ASML Netherlands BV Lithographic apparatus and device manufacturing method.
KR101290021B1 (ko) 2003-06-13 2013-07-30 가부시키가이샤 니콘 노광 방법, 기판 스테이지, 노광 장치, 및 디바이스 제조 방법
KR101674329B1 (ko) 2003-06-19 2016-11-08 가부시키가이샤 니콘 노광 장치 및 디바이스 제조방법
US6867844B2 (en) 2003-06-19 2005-03-15 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
US6809794B1 (en) 2003-06-27 2004-10-26 Asml Holding N.V. Immersion photolithography system and method using inverted wafer-projection optics interface
EP2853943B1 (en) 2003-07-08 2016-11-16 Nikon Corporation Wafer table for immersion lithography
KR101296501B1 (ko) 2003-07-09 2013-08-13 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
EP1643543B1 (en) 2003-07-09 2010-11-24 Nikon Corporation Exposure apparatus and method for manufacturing device
WO2005006415A1 (ja) 2003-07-09 2005-01-20 Nikon Corporation 露光装置及びデバイス製造方法
WO2005010960A1 (ja) 2003-07-25 2005-02-03 Nikon Corporation 投影光学系の検査方法および検査装置、ならびに投影光学系の製造方法
EP2264534B1 (en) 2003-07-28 2013-07-17 Nikon Corporation Exposure apparatus, method for producing device, and method for controlling exposure apparatus
EP1503244A1 (en) 2003-07-28 2005-02-02 ASML Netherlands B.V. Lithographic projection apparatus and device manufacturing method
US7175968B2 (en) 2003-07-28 2007-02-13 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and a substrate
US7779781B2 (en) 2003-07-31 2010-08-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP2261740B1 (en) 2003-08-29 2014-07-09 ASML Netherlands BV Lithographic apparatus
CN100407371C (zh) 2003-08-29 2008-07-30 株式会社尼康 曝光装置和器件加工方法
US7907255B2 (en) 2003-08-29 2011-03-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101288140B1 (ko) 2003-09-03 2013-07-19 가부시키가이샤 니콘 액침 리소그래피용 유체를 제공하기 위한 장치 및 방법
US8054448B2 (en) 2004-05-04 2011-11-08 Nikon Corporation Apparatus and method for providing fluid for immersion lithography
WO2005029559A1 (ja) 2003-09-19 2005-03-31 Nikon Corporation 露光装置及びデバイス製造方法
KR101421398B1 (ko) 2003-09-29 2014-07-18 가부시키가이샤 니콘 노광장치, 노광방법 및 디바이스 제조방법
WO2005036623A1 (ja) 2003-10-08 2005-04-21 Zao Nikon Co., Ltd. 基板搬送装置及び基板搬送方法、露光装置及び露光方法、デバイス製造方法
KR101111364B1 (ko) 2003-10-08 2012-02-27 가부시키가이샤 니콘 기판 반송 장치 및 기판 반송 방법, 노광 장치 및 노광방법, 디바이스 제조 방법
CN102360167B (zh) 2003-10-09 2015-01-07 株式会社尼康 曝光装置和曝光方法以及器件制造方法
US7352433B2 (en) 2003-10-28 2008-04-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7411653B2 (en) 2003-10-28 2008-08-12 Asml Netherlands B.V. Lithographic apparatus
JP4295712B2 (ja) 2003-11-14 2009-07-15 エーエスエムエル ネザーランズ ビー.ブイ. リソグラフィ装置及び装置製造方法
KR101682884B1 (ko) 2003-12-03 2016-12-06 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법, 그리고 광학 부품
DE602004030481D1 (de) 2003-12-15 2011-01-20 Nippon Kogaku Kk Bühnensystem, belichtungsvorrichtung und belichtungsverfahren
US7394521B2 (en) 2003-12-23 2008-07-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2005191394A (ja) * 2003-12-26 2005-07-14 Canon Inc 露光方法及び装置
KR101135232B1 (ko) 2004-01-20 2012-04-12 칼 짜이스 에스엠테 게엠베하 마이크로 리소그래픽 투영 노광 장치
US7589822B2 (en) 2004-02-02 2009-09-15 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
KR101227211B1 (ko) 2004-02-03 2013-01-28 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
KR20170018465A (ko) 2004-03-25 2017-02-17 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
US7898642B2 (en) 2004-04-14 2011-03-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7616383B2 (en) 2004-05-18 2009-11-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1774405B1 (en) 2004-06-04 2014-08-06 Carl Zeiss SMT GmbH System for measuring the image quality of an optical imaging system
CN101819386B (zh) 2004-06-09 2013-10-09 尼康股份有限公司 曝光装置及元件制造方法
US7463330B2 (en) 2004-07-07 2008-12-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2006006565A1 (ja) 2004-07-12 2006-01-19 Nikon Corporation 露光装置及びデバイス製造方法
EP1801853A4 (en) 2004-08-18 2008-06-04 Nippon Kogaku Kk Exposure apparatus and device manufacturing method
US7701550B2 (en) 2004-08-19 2010-04-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR100593751B1 (ko) * 2004-11-16 2006-06-28 삼성전자주식회사 오토 포커스 시스템, 오토 포커스 방법 및 이를 이용한노광장치
US7411657B2 (en) 2004-11-17 2008-08-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7446850B2 (en) 2004-12-03 2008-11-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7196770B2 (en) 2004-12-07 2007-03-27 Asml Netherlands B.V. Prewetting of substrate before immersion exposure
US7365827B2 (en) 2004-12-08 2008-04-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7352440B2 (en) 2004-12-10 2008-04-01 Asml Netherlands B.V. Substrate placement in immersion lithography
US7403261B2 (en) 2004-12-15 2008-07-22 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7528931B2 (en) 2004-12-20 2009-05-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7880860B2 (en) 2004-12-20 2011-02-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7405805B2 (en) 2004-12-28 2008-07-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1681597B1 (en) 2005-01-14 2010-03-10 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US8692973B2 (en) 2005-01-31 2014-04-08 Nikon Corporation Exposure apparatus and method for producing device
KR20150004890A (ko) 2005-01-31 2015-01-13 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
KR101140755B1 (ko) 2005-02-10 2012-05-03 에이에스엠엘 네델란즈 비.브이. 침지 액체, 노광 장치, 및 노광 프로세스
US7378025B2 (en) 2005-02-22 2008-05-27 Asml Netherlands B.V. Fluid filtration method, fluid filtered thereby, lithographic apparatus and device manufacturing method
US7224431B2 (en) 2005-02-22 2007-05-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8018573B2 (en) 2005-02-22 2011-09-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7282701B2 (en) 2005-02-28 2007-10-16 Asml Netherlands B.V. Sensor for use in a lithographic apparatus
US7428038B2 (en) 2005-02-28 2008-09-23 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and apparatus for de-gassing a liquid
US7324185B2 (en) 2005-03-04 2008-01-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7411654B2 (en) 2005-04-05 2008-08-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
USRE43576E1 (en) 2005-04-08 2012-08-14 Asml Netherlands B.V. Dual stage lithographic apparatus and device manufacturing method
US7291850B2 (en) 2005-04-08 2007-11-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20060232753A1 (en) 2005-04-19 2006-10-19 Asml Holding N.V. Liquid immersion lithography system with tilted liquid flow
US7433016B2 (en) 2005-05-03 2008-10-07 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8248577B2 (en) 2005-05-03 2012-08-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2006313866A (ja) * 2005-05-09 2006-11-16 Canon Inc 露光装置及び方法
US7652746B2 (en) 2005-06-21 2010-01-26 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7474379B2 (en) 2005-06-28 2009-01-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7834974B2 (en) 2005-06-28 2010-11-16 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8054445B2 (en) 2005-08-16 2011-11-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7411658B2 (en) 2005-10-06 2008-08-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7864292B2 (en) 2005-11-16 2011-01-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7773195B2 (en) 2005-11-29 2010-08-10 Asml Holding N.V. System and method to increase surface tension and contact angle in immersion lithography
US7649611B2 (en) 2005-12-30 2010-01-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8045134B2 (en) 2006-03-13 2011-10-25 Asml Netherlands B.V. Lithographic apparatus, control system and device manufacturing method
JP4889331B2 (ja) * 2006-03-22 2012-03-07 大日本スクリーン製造株式会社 基板処理装置および基板処理方法
WO2007118014A3 (en) * 2006-04-03 2008-07-03 Nippon Kogaku Kk Incidence surfaces and optical windows that are solvophobic to immersion liquids
US9477158B2 (en) 2006-04-14 2016-10-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
DE102006021797A1 (de) 2006-05-09 2007-11-15 Carl Zeiss Smt Ag Optische Abbildungseinrichtung mit thermischer Dämpfung
US8045135B2 (en) 2006-11-22 2011-10-25 Asml Netherlands B.V. Lithographic apparatus with a fluid combining unit and related device manufacturing method
US9632425B2 (en) 2006-12-07 2017-04-25 Asml Holding N.V. Lithographic apparatus, a dryer and a method of removing liquid from a surface
US8634053B2 (en) 2006-12-07 2014-01-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8237911B2 (en) 2007-03-15 2012-08-07 Nikon Corporation Apparatus and methods for keeping immersion fluid adjacent to an optical assembly during wafer exchange in an immersion lithography machine
US9013672B2 (en) 2007-05-04 2015-04-21 Asml Netherlands B.V. Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method
US8947629B2 (en) 2007-05-04 2015-02-03 Asml Netherlands B.V. Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method
EP2128703A1 (en) 2008-05-28 2009-12-02 ASML Netherlands BV Lithographic Apparatus and a Method of Operating the Apparatus
US7742163B2 (en) * 2008-07-08 2010-06-22 Tokyo Electron Limited Field replaceable units (FRUs) optimized for integrated metrology (IM)
EP2381310B1 (en) 2010-04-22 2015-05-06 ASML Netherlands BV Fluid handling structure and lithographic apparatus
US9389349B2 (en) * 2013-03-15 2016-07-12 Kla-Tencor Corporation System and method to determine depth for optical wafer inspection
KR20150005156A (ko) 2013-07-04 2015-01-14 한국과학기술원 리소그래피용 메타-포토레지스트

Family Cites Families (132)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2102922C3 (zh) * 1971-01-22 1978-08-24 Ernst Leitz Wetzlar Gmbh, 6330 Wetzlar
US4346164A (en) * 1980-10-06 1982-08-24 Werner Tabarelli Photolithographic method for the manufacture of integrated circuits
JPS6349893B2 (zh) * 1981-03-18 1988-10-06 Hitachi Ltd
JPS58202448A (en) 1982-05-21 1983-11-25 Hitachi Ltd Exposing device
JPS5919912A (en) 1982-07-26 1984-02-01 Hitachi Ltd Immersion distance holding device
JPS6265326A (en) 1985-09-18 1987-03-24 Hitachi Ltd Exposure device
JPS63157419A (en) 1986-12-22 1988-06-30 Toshiba Corp Fine pattern transfer apparatus
JPH04305917A (en) 1991-04-02 1992-10-28 Nikon Corp Adhesion type exposure device
JPH04305915A (en) 1991-04-02 1992-10-28 Nikon Corp Adhesion type exposure device
JPH0562877A (ja) 1991-09-02 1993-03-12 Yasuko Shinohara 光によるlsi製造縮小投影露光装置の光学系
JP3374413B2 (ja) * 1992-07-20 2003-02-04 株式会社ニコン 投影露光装置、投影露光方法、並びに集積回路製造方法
JPH06124873A (ja) 1992-10-09 1994-05-06 Canon Inc 液浸式投影露光装置
JP2753930B2 (ja) * 1992-11-27 1998-05-20 キヤノン株式会社 液浸式投影露光装置
US5448332A (en) * 1992-12-25 1995-09-05 Nikon Corporation Exposure method and apparatus
JPH07220990A (ja) 1994-01-28 1995-08-18 Hitachi Ltd パターン形成方法及びその露光装置
DE19604363A1 (de) * 1995-02-23 1996-08-29 Zeiss Carl Fa Zusatzmodul zur ortsaufgelösten Fokusvermessung
JPH08316125A (ja) 1995-05-19 1996-11-29 Hitachi Ltd 投影露光方法及び露光装置
JPH08316124A (ja) * 1995-05-19 1996-11-29 Hitachi Ltd 投影露光方法及び露光装置
US5825043A (en) * 1996-10-07 1998-10-20 Nikon Precision Inc. Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus
JP3747566B2 (ja) * 1997-04-23 2006-02-22 株式会社ニコン 液浸型露光装置
JPH11176727A (ja) * 1997-12-11 1999-07-02 Nikon Corp 投影露光装置
WO1999049504A1 (en) * 1998-03-26 1999-09-30 Nikon Corporation Projection exposure method and system
KR20010048755A (ko) 1999-11-29 2001-06-15 윤종용 오토 포커스 시스템을 갖는 노광 장치의 포커싱 방법
EP1697798A2 (en) 2003-12-15 2006-09-06 Carl Zeiss SMT AG Projection objective having a high aperture and a planar end surface
US7187503B2 (en) * 1999-12-29 2007-03-06 Carl Zeiss Smt Ag Refractive projection objective for immersion lithography
KR100965330B1 (ko) 2003-12-15 2010-06-22 칼 짜이스 에스엠티 아게 적어도 한 개의 액체 렌즈를 가진 마이크로리소그래피 투사대물렌즈로서의 대물렌즈
US6995930B2 (en) * 1999-12-29 2006-02-07 Carl Zeiss Smt Ag Catadioptric projection objective with geometric beam splitting
US6988326B2 (en) * 2002-09-30 2006-01-24 Lam Research Corporation Phobic barrier meniscus separation and containment
US7367345B1 (en) 2002-09-30 2008-05-06 Lam Research Corporation Apparatus and method for providing a confined liquid for immersion lithography
US6954993B1 (en) * 2002-09-30 2005-10-18 Lam Research Corporation Concentric proximity processing head
US7093375B2 (en) * 2002-09-30 2006-08-22 Lam Research Corporation Apparatus and method for utilizing a meniscus in substrate processing
KR100866818B1 (ko) * 2000-12-11 2008-11-04 가부시키가이샤 니콘 투영광학계 및 이 투영광학계를 구비한 노광장치
US20020163629A1 (en) * 2001-05-07 2002-11-07 Michael Switkes Methods and apparatus employing an index matching medium
US6787418B2 (en) * 2002-02-06 2004-09-07 Taiwan Semiconductor Manufacturing Co., Ltd. Method of making the selection gate in a split-gate flash eeprom cell and its structure
DE10210899A1 (de) * 2002-03-08 2003-09-18 Zeiss Carl Smt Ag Refraktives Projektionsobjektiv für Immersions-Lithographie
US7092069B2 (en) * 2002-03-08 2006-08-15 Carl Zeiss Smt Ag Projection exposure method and projection exposure system
JP4370554B2 (ja) * 2002-06-14 2009-11-25 株式会社ニコン オートフォーカス装置およびオートフォーカス付き顕微鏡
DE10229818A1 (de) * 2002-06-28 2004-01-15 Carl Zeiss Smt Ag Verfahren zur Fokusdetektion und Abbildungssystem mit Fokusdetektionssystem
US7362508B2 (en) 2002-08-23 2008-04-22 Nikon Corporation Projection optical system and method for photolithography and exposure apparatus and method using same
US6788477B2 (en) * 2002-10-22 2004-09-07 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus for method for immersion lithography
CN101349876B (zh) * 2002-11-12 2010-12-01 Asml荷兰有限公司 光刻装置和器件制造方法
DE60335595D1 (de) * 2002-11-12 2011-02-17 Asml Netherlands Bv Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung
KR100588123B1 (ko) * 2002-11-12 2006-06-09 에이에스엠엘 네델란즈 비.브이. 리소그래피장치 및 디바이스제조방법
CN100470367C (zh) * 2002-11-12 2009-03-18 Asml荷兰有限公司 光刻装置和器件制造方法
US7110081B2 (en) * 2002-11-12 2006-09-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP3953460B2 (ja) * 2002-11-12 2007-08-08 エーエスエムエル ネザーランズ ビー.ブイ. リソグラフィ投影装置
DE10253679A1 (de) * 2002-11-18 2004-06-03 Infineon Technologies Ag Optische Einrichtung zur Verwendung bei einem Lithographie-Verfahren, insbesondere zur Herstellung eines Halbleiter-Bauelements, sowie optisches Lithographieverfahren
KR100588125B1 (ko) * 2002-11-18 2006-06-09 에이에스엠엘 네델란즈 비.브이. 리소그래피장치 및 디바이스 제조방법
DE10258718A1 (de) * 2002-12-09 2004-06-24 Carl Zeiss Smt Ag Projektionsobjektiv, insbesondere für die Mikrolithographie, sowie Verfahren zur Abstimmung eines Projektionsobjektives
US6992750B2 (en) * 2002-12-10 2006-01-31 Canon Kabushiki Kaisha Exposure apparatus and method
CN100429748C (zh) * 2002-12-10 2008-10-29 株式会社尼康 曝光装置和器件制造方法
CN100370533C (zh) 2002-12-13 2008-02-20 皇家飞利浦电子股份有限公司 用于照射层的方法和用于将辐射导向层的装置
JP4364806B2 (ja) 2002-12-19 2009-11-18 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 層上にスポットを照射する方法及び装置
US7010958B2 (en) * 2002-12-19 2006-03-14 Asml Holding N.V. High-resolution gas gauge proximity sensor
KR100971440B1 (ko) 2002-12-19 2010-07-21 코닌클리케 필립스 일렉트로닉스 엔.브이. 레이어 상의 스폿을 조사하기 위한 방법 및 장치
US6781670B2 (en) * 2002-12-30 2004-08-24 Intel Corporation Immersion lithography
US7090964B2 (en) 2003-02-21 2006-08-15 Asml Holding N.V. Lithographic printing with polarized light
US7206059B2 (en) * 2003-02-27 2007-04-17 Asml Netherlands B.V. Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems
US6943941B2 (en) * 2003-02-27 2005-09-13 Asml Netherlands B.V. Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems
US7029832B2 (en) 2003-03-11 2006-04-18 Samsung Electronics Co., Ltd. Immersion lithography methods using carbon dioxide
US20050164522A1 (en) 2003-03-24 2005-07-28 Kunz Roderick R. Optical fluids, and systems and methods of making and using the same
KR20110104084A (ko) 2003-04-09 2011-09-21 가부시키가이샤 니콘 액침 리소그래피 유체 제어 시스템
WO2004090633A3 (en) 2003-04-10 2005-05-12 John K Eaton An electro-osmotic element for an immersion lithography apparatus
KR20170064003A (ko) 2003-04-10 2017-06-08 가부시키가이샤 니콘 액침 리소그래피 장치용 운반 영역을 포함하는 환경 시스템
EP2921905B1 (en) 2003-04-10 2017-12-27 Nikon Corporation Run-off path to collect liquid for an immersion lithography apparatus
CN104597717B (zh) 2003-04-10 2017-09-05 株式会社尼康 包括用于沉浸光刻装置的真空清除的环境系统
CN101825847B (zh) 2003-04-11 2013-10-16 株式会社尼康 用于沉浸式光刻光学系统的清洗方法
KR101577555B1 (ko) 2003-04-11 2015-12-14 가부시키가이샤 니콘 액침 리소그래피 머신에서 웨이퍼 교환동안 투영 렌즈 아래의 갭에서 액침 액체를 유지하는 장치 및 방법
JP4582089B2 (ja) 2003-04-11 2010-11-17 株式会社ニコン 液浸リソグラフィ用の液体噴射回収システム
JP2006523958A (ja) 2003-04-17 2006-10-19 株式会社ニコン 液浸リソグラフィで使用するためのオートフォーカス素子の光学的構造
JP4025683B2 (ja) * 2003-05-09 2007-12-26 松下電器産業株式会社 パターン形成方法及び露光装置
JP4146755B2 (ja) * 2003-05-09 2008-09-10 松下電器産業株式会社 パターン形成方法
EP2282233A1 (en) * 2003-05-13 2011-02-09 ASML Netherlands BV Lithographic apparatus
EP2261742A3 (en) * 2003-06-11 2011-05-25 ASML Netherlands BV Lithographic apparatus and device manufacturing method.
JP4084710B2 (ja) * 2003-06-12 2008-04-30 松下電器産業株式会社 パターン形成方法
JP4054285B2 (ja) * 2003-06-12 2008-02-27 松下電器産業株式会社 パターン形成方法
US6867844B2 (en) * 2003-06-19 2005-03-15 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
JP4084712B2 (ja) * 2003-06-23 2008-04-30 松下電器産業株式会社 パターン形成方法
JP4029064B2 (ja) * 2003-06-23 2008-01-09 松下電器産業株式会社 パターン形成方法
US6809794B1 (en) * 2003-06-27 2004-10-26 Asml Holding N.V. Immersion photolithography system and method using inverted wafer-projection optics interface
US7236232B2 (en) 2003-07-01 2007-06-26 Nikon Corporation Using isotopically specified fluids as optical elements
US7384149B2 (en) 2003-07-21 2008-06-10 Asml Netherlands B.V. Lithographic projection apparatus, gas purging method and device manufacturing method and purge gas supply system
US7006209B2 (en) 2003-07-25 2006-02-28 Advanced Micro Devices, Inc. Method and apparatus for monitoring and controlling imaging in immersion lithography systems
US7175968B2 (en) * 2003-07-28 2007-02-13 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and a substrate
US7061578B2 (en) 2003-08-11 2006-06-13 Advanced Micro Devices, Inc. Method and apparatus for monitoring and controlling imaging in immersion lithography systems
US7579135B2 (en) * 2003-08-11 2009-08-25 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography apparatus for manufacture of integrated circuits
US7700267B2 (en) * 2003-08-11 2010-04-20 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion fluid for immersion lithography, and method of performing immersion lithography
US7085075B2 (en) 2003-08-12 2006-08-01 Carl Zeiss Smt Ag Projection objectives including a plurality of mirrors with lenses ahead of mirror M3
US6844206B1 (en) 2003-08-21 2005-01-18 Advanced Micro Devices, Llp Refractive index system monitor and control for immersion lithography
US6954256B2 (en) * 2003-08-29 2005-10-11 Asml Netherlands B.V. Gradient immersion lithography
US7070915B2 (en) 2003-08-29 2006-07-04 Tokyo Electron Limited Method and system for drying a substrate
US7014966B2 (en) 2003-09-02 2006-03-21 Advanced Micro Devices, Inc. Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems
KR101288140B1 (ko) 2003-09-03 2013-07-19 가부시키가이샤 니콘 액침 리소그래피용 유체를 제공하기 위한 장치 및 방법
US6961186B2 (en) * 2003-09-26 2005-11-01 Takumi Technology Corp. Contact printing using a magnified mask image
US7369217B2 (en) * 2003-10-03 2008-05-06 Micronic Laser Systems Ab Method and device for immersion lithography
US7678527B2 (en) * 2003-10-16 2010-03-16 Intel Corporation Methods and compositions for providing photoresist with improved properties for contacting liquids
US7411653B2 (en) 2003-10-28 2008-08-12 Asml Netherlands B.V. Lithographic apparatus
EP1685446A2 (en) 2003-11-05 2006-08-02 DSM IP Assets B.V. A method and apparatus for producing microchips
US7924397B2 (en) * 2003-11-06 2011-04-12 Taiwan Semiconductor Manufacturing Company, Ltd. Anti-corrosion layer on objective lens for liquid immersion lithography applications
WO2005054953A3 (en) 2003-11-24 2006-01-05 Zeiss Carl Smt Ag Holding device for an optical element in an objective
US7545481B2 (en) 2003-11-24 2009-06-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7125652B2 (en) 2003-12-03 2006-10-24 Advanced Micro Devices, Inc. Immersion lithographic process using a conforming immersion medium
JP5102492B2 (ja) 2003-12-19 2012-12-19 カール・ツァイス・エスエムティー・ゲーエムベーハー 結晶素子を有するマイクロリソグラフィー投影用対物レンズ
US20050185269A1 (en) * 2003-12-19 2005-08-25 Carl Zeiss Smt Ag Catadioptric projection objective with geometric beam splitting
US7460206B2 (en) * 2003-12-19 2008-12-02 Carl Zeiss Smt Ag Projection objective for immersion lithography
US7394521B2 (en) * 2003-12-23 2008-07-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7589818B2 (en) * 2003-12-23 2009-09-15 Asml Netherlands B.V. Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus
US7119884B2 (en) 2003-12-24 2006-10-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20050147920A1 (en) * 2003-12-30 2005-07-07 Chia-Hui Lin Method and system for immersion lithography
US7088422B2 (en) * 2003-12-31 2006-08-08 International Business Machines Corporation Moving lens for immersion optical lithography
JP4371822B2 (ja) * 2004-01-06 2009-11-25 キヤノン株式会社 露光装置
JP4429023B2 (ja) * 2004-01-07 2010-03-10 キヤノン株式会社 露光装置及びデバイス製造方法
US20050153424A1 (en) * 2004-01-08 2005-07-14 Derek Coon Fluid barrier with transparent areas for immersion lithography
KR101417706B1 (ko) * 2004-01-14 2014-07-08 칼 짜이스 에스엠테 게엠베하 반사굴절식 투영 대물렌즈
KR101233879B1 (ko) 2004-01-16 2013-02-15 칼 짜이스 에스엠티 게엠베하 편광변조 광학소자
WO2005069078A1 (en) 2004-01-19 2005-07-28 Carl Zeiss Smt Ag Microlithographic projection exposure apparatus with immersion projection lens
KR101135232B1 (ko) 2004-01-20 2012-04-12 칼 짜이스 에스엠테 게엠베하 마이크로 리소그래픽 투영 노광 장치
US7026259B2 (en) * 2004-01-21 2006-04-11 International Business Machines Corporation Liquid-filled balloons for immersion lithography
US7391501B2 (en) * 2004-01-22 2008-06-24 Intel Corporation Immersion liquids with siloxane polymer for immersion lithography
EP1723467A2 (en) 2004-02-03 2006-11-22 Rochester Institute of Technology Method of photolithography using a fluid and a system thereof
EP1716454A1 (en) 2004-02-09 2006-11-02 Carl Zeiss SMT AG Projection objective for a microlithographic projection exposure apparatus
US7050146B2 (en) * 2004-02-09 2006-05-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7326522B2 (en) * 2004-02-11 2008-02-05 Asml Netherlands B.V. Device manufacturing method and a substrate
US20070165198A1 (en) 2004-02-13 2007-07-19 Carl Zeiss Smt Ag Projection objective for a microlithographic projection exposure apparatus
CN1922528A (zh) 2004-02-18 2007-02-28 康宁股份有限公司 用于具有深紫外光的高数值孔径成象的反折射成象系统
US20050205108A1 (en) * 2004-03-16 2005-09-22 Taiwan Semiconductor Manufacturing Co., Ltd. Method and system for immersion lithography lens cleaning
US7027125B2 (en) * 2004-03-25 2006-04-11 International Business Machines Corporation System and apparatus for photolithography
US7084960B2 (en) * 2004-03-29 2006-08-01 Intel Corporation Lithography using controlled polarization
US7034917B2 (en) * 2004-04-01 2006-04-25 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and device manufactured thereby
US7227619B2 (en) * 2004-04-01 2007-06-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7295283B2 (en) * 2004-04-02 2007-11-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2005098504A1 (en) 2004-04-08 2005-10-20 Carl Zeiss Smt Ag Imaging system with mirror group

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101140426B (zh) 2006-09-07 2010-06-09 Asml荷兰有限公司 光刻设备和器件制造方法

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