CN1755492A - 具有一导电的光吸收性光罩的装置及其制作方法 - Google Patents
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Abstract
本发明揭示一种用于一光学组件的系统及方法，该光学组件遮罩一显示器的非有效部分并为一个或多个显示电路提供一电路径。在一实施例中，一光学装置包括：一衬底；复数个位于所述衬底上的光学元件，每一光学元件均具有一随施加至所述光学元件的电压而变化的光学特性；及一布置于所述衬底上并偏离所述复数个光学元件的光吸收性的导电光罩，所述光罩电耦接至所述光学元件中的一个或多个，从而为将电压施加至所述一个或多个光学元件提供一个或多个电路径。在另一实施例中，一种向一显示器的复数个光学元件提供电信号的方法包括：将一导电的光吸收性光罩电耦接至一个或多个光学元件，并向所述光罩施加电压以激活所述一个或多个光学元件。
Description
技术领域
本发明的技术领域涉及微机电系统(MEMS)。
背景技术
微机电系统(MEMS)包括微机械元件、激励器及电子元件。微机械元件可采用沉积、蚀刻或其他可蚀刻掉衬底及/或所沉积材料层的若干部分或可添加若干层以形成电和机电装置的微机械加工工艺制成。一种类型的MEMS装置被称为干涉式调制器。干涉式调制器可包含一对导电板，其中之一或二者均可全部或部分地透明及/或为反射性，且在施加一个适当的电信号时能够相对运动。其中一个板可包含一沉积在一衬底上的静止层，另一个板可包含一通过一空气间隙与该静止层隔开的金属隔板。上述装置具有广泛的应用范围，且在此项技术中，利用及/或修改这些类型装置的特性、以使其性能可用于改善现有产品及制造目前尚未开发的新产品将颇为有益。
发明内容
本发明的系统、方法及装置均具有多个方面，任一单个方面均不能单独决定其所期望特性。现在，对其更主要的特性进行简要论述，此并不限定本发明的范围。在查看这一论述，尤其是在阅读了标题为“具体实施方式”的部分之后，人们即可理解本发明的特征如何提供优于其他显示装置的优点。
在某些实施例中，一种光学装置包括一衬底。所述光学装置进一步包括一布置于所述衬底上的干涉式光调制元件。所述调制元件具有一随施加至所述调制元件的电压而变化的光学特性。所述光学装置进一步包括一布置于所述衬底上并与所述调制元件相间隔的导电光罩。所述光罩电耦接至所述调制元件以为将电压施加至所述调制元件提供一个或多个电路径。
在某些实施例中，一种方法向一显示器的复数个干涉式光学元件提供一电信号。可通过向所述干涉式光学元件施加一电压来分别激励所述干涉式光学元件。所述方法包括将一导电光罩电耦接至一个或多个干涉式光学元件。所述方法进一步包括向所述光罩施加一电压以激活所述一个或多个干涉式光学元件。
在某些实施例中，一种方法制作一干涉式光学装置。所述方法包括：在一衬底上形成一导电光罩。所述光罩吸收光。所述方法进一步包括在所述衬底上与所述光罩相间隔地形成一干涉式光学组件。所述干涉式光学组件具有一受驱动状态及一未受驱动状态。所述干涉式光学组件响应于所施加的电压而在所述受驱动状态与所述未受驱动状态之间变换。每一状态均具有对入射光的特征光学响应。所述方法进一步包括将所述光罩电连接至所述干涉式光学组件，以使所述光罩的至少一部分提供一用于向所述干涉式光学组件施加所述电压的总线。
在某些实施例中，一种方法制作一光学装置，所述光学装置包括至少一个形成于一透明衬底上的有源干涉式光学组件。所述方法包括识别出所述衬底上的一将为光吸收性的区域。所述识别出的区域在横向上偏离所述至少一个有源干涉式光学组件。所述方法进一步包括在制作所述至少一个有源干涉式光学组件之前，在所述识别出的区域上制作一导电的光吸收性光罩。所述光罩连接至所述有源干涉式光学组件。
在某些实施例中，一种光学装置包括用于支撑一光学装置的构件。所述光学装置进一步包括用于以干涉方式调制光的构件。所述调制构件布置于所述支撑构件上。所述调制构件具有一随施加至所述调制构件的电压而变化的光学特性。所述光学装置进一步包括用于吸收光的构件。所述吸收构件布置于所述支撑构件上并与所述调制构件相间隔。所述吸收构件电耦接至所述调制构件以为将电压施加至所述调制构件提供一个或多个电路径。
附图说明
图1为一等轴图，其显示一干涉式调制器显示器的一实施例的一部分，其中一第一干涉式调制器的一可移动反射层处于一释放位置，且一第二干涉式调制器的一可移动反射层处于一受激励位置。
图2为一系统方框图，其显示一包含一3×3干涉式调制器显示器的电子装置的一实施例。
图3为图1所示干涉式调制器的一实例性实施例的可移动镜位置与所施加电压的关系图。
图4为一组可用于驱动干涉式调制器显示器的行和列电压的示意图。
图5A显示在图2所示的3×3干涉式调制器显示器中的一个实例性显示数据帧。
图5B显示可用于写入图5A所示帧的行信号及列信号的一个实例性时序图。
图6A为一图1所示装置的剖面图。
图6B为一干涉式调制器的一替代实施例的一剖面图。
图6C为一干涉式调制器的另一替代实施例的一剖面图。
图7A为一第一实例性干涉式调制器处于一第一状态的侧视剖视立面图。
图7B为图7A所示干涉式调制器处于一第二状态的侧视剖视立面图。
图7C为第二实例性干涉式调制器处于一第一状态的侧视剖视立面图。
图7D为图7C所示干涉式调制器处于一第二状态的侧视剖视立面图。
图8A为一干涉式调制器阵列的一部分的俯视图，其显示包含于复数个像素中的含非有效区域的结构。
图8B为一干涉式调制器阵列的一部分的俯视剖面图，其显示包含于复数个像素中的含非有效区域的结构。
图9显示一穿过一根据本发明一实施例具有一光罩或光吸收性区域的MEMS装置的剖面图。
图10显示一根据本发明另一实施例具有一光罩或光吸收性区域的MEMS装置的另一实施例的剖面图；
图11为一剖面图，其显示在一具有导电光罩的MEMS装置中可包含的各种层；
图12为在制造一具有导电光罩的MEMS装置中的一个阶段的剖面图，其显示一反射性铬层沉积于一衬底上。
图13为在制造一具有导电光罩的MEMS装置中的一个阶段的剖面图，其显示图12所示的反射性铬层的某些部分已被移除。
图14为在制造一具有导电光罩的MEMS装置中的一个阶段的剖面图，其显示向图13所示实施例涂覆其他层。
图15为在制造一具有导电光罩的MEMS装置中的一个阶段的剖面图，其显示实施一图案化及蚀刻步骤形成用于支撑件的凹槽。
图16为在制造一具有导电光罩的MEMS装置中的一个阶段的剖面图，其显示在图15所示凹槽中形成支撑件。
图17为在制造一具有导电光罩的MEMS装置中的一个阶段的剖面图，其显示在图16所示实施例上沉积一金属薄膜并移除一牺牲层以形成一气隙的结果。
图18为一MEMS装置的剖面图，其显示一导电光罩的一实施例，其中在光罩的两个层与一可移动的机械薄膜之间形成一电并联连接。
图19为一MEMS装置的剖面图，其显示一导电光罩的一实施例，其中在光罩的两个层与一不可移动的电极层之间形成一电并联连接。
图20为一MEMS装置的剖面图，其显示一导电光罩的一实施例，其中在光罩的一第一反射层与一可移动的机械薄膜之间形成一电并联连接。
图21为一MEMS装置的剖面图，其显示一导电光罩的一实施例，其中在光罩的一第一及第二反射层与一可移动的机械薄膜之间形成一电并联连接。
图22为一MEMS装置的剖面图，其显示一导电光罩的一实施例，其中在光罩的一第一反射层与一不可移动的电极层之间形成一电并联连接、在光罩的一第二反射层与一可移动的机械薄膜之间形成另一电并联连接。
图23A及23B为系统方块图，其显示一包含复数个干涉式调制器的视觉显示装置的一实施例。
具体实施方式
下文说明是针对本发明的某些具体实施例。在本说明中，会参照附图，在附图中相同的部件自始至终使用相同的编号标识。
在本说明书中参考“一个实施例”或“一实施例”意指结合该实施例所述的特定特征、结构或特性包含于本发明的至少一个实施例中。在本说明书中不同位置处所出现的用语“在一实施例中”未必均指同一实施例，但也不是排斥其他实施例的单独的或替代的实施例。此外，说明了某些实施例可表现出而其他实施例表现不出的各种特征。同样，说明了可能为某些实施例所要求而不为其他实施例所要求的各种要求。
人们对在高分辨率移动装置显示器上观看视频数据同时满足功率限制条件的愿望可通过使显示器控制线的电阻最小化而得以容易实现。出于这些及其他原因，希望增大信号线的电导、同时最大限度地减少显示器中额外的被动或非有源光学内含件的数量。本发明在一实施例中揭示一种多用途光学组件，其用作一导电光罩(例如“黑色光罩”)来吸收环境光或杂散光，并通过提高反差比来改善显示装置的光学响应，同时还用作一电总线层。在某些应用中，所述导电光罩可反射预定波长的光以显现为一不同于黑色的颜色。所述导电光罩-在本文中也简称为“光罩”-可以电耦接至显示器上的一个或多个元件，从而为向一个或多个显示元件施加电压提供一个或多个电路径。例如，视所需的构造而定，可将一个或多个行电极或列电极连接至所述导电光罩，以降低所连接的行电极或列电极的电阻。在一实施例中，一MEMS显示装置(例如一干涉式调制器阵列)包括一动态光学组件(例如一动态干涉式调制器)及一在横向上偏离所述动态光学组件的静态光学组件(例如一静态干涉式调制器)。该静态光学组件用作“黑色光罩”来吸收显示器的非有效区域中的环境光或杂散光以改善动态光学组件的光学响应，并用作所述干涉式调制器阵列的行电极或列电极的电总线。例如，非有效区域可包括MEMS显示装置中除对应于可移动反射层的区域以外的一个或多个区域。非有效区域也可包括显示装置中非用于显示在显示装置上所呈现的图像或数据的区域。
尽管将使用包含干涉式调制器的MEMS装置来举例说明一实施例，然而应了解，本发明还大体上涵盖例如各种图像显示器及光电装置等其他具有需要为光吸收性的非有效区域、但不包括干涉式调制器的光学装置(例如LED及等离子体显示器)。根据以下说明容易看出，本发明可在任一经构造用于显示图像-无论是动态图像(例如视频)还是静态图像(例如静止图像)，无论是文字图像还是图片图像-的装置中实施。更具体而言，本发明可在例如(但不限于)以下等众多种电子装置中实施或与这些电子装置相关联：手机、无线装置、个人数据助理(PDA)、手持式计算机或便携式计算机、GPS接收器/导航器、照像机、MP3播放器、摄像机、游戏机、手表、时钟、计算器、电视监视器、平板显示器、计算机监视器、汽车显示器(例如里程表显示器等)、驾驶舱控制装置及/或显示器、照像机景物显示器(例如车辆的后视照像机显示器)、电子照片、电子告示牌或标牌、投影仪、建筑结构、包装及美学结构(例如一件珠宝上的图像显示器)。与本文所述MEMS装置具有类似结构的MEMS装置也可用于非显示应用，例如用于电子切换装置。
图1中显示一个包括一干涉式MEMS显示元件的干涉式调制器显示器实施例。在这些装置中，像素处于亮状态或暗状态。在亮(开(on)或打开(open))状态下，显示元件将入射可见光的一大部分反射至用户。在处于暗(关(off)或关闭(closed))状态下时，显示元件几乎不向用户反射入射可见光。视不同的实施例而定，可颠倒“开”与“关”状态的光反射性质。MEMS像素可构造成主要在所选色彩下反射，以除黑色和白色之外还可实现彩色显示。
图1为一等轴图，其显示一视觉显示器的一系列像素中的两个相邻像素，其中每一像素包含一MEMS干涉式调制器。在某些实施例中，一干涉式调制器显示器包含一由这些干涉式调制器构成的行/列阵列。每一干涉式调制器包括一对反射层，该对反射层定位成彼此相距一可变且可控的距离，以形成一具有至少一个可变尺寸的光学谐振空腔。在一实施例中，其中一个反射层可在两个位置之间移动。在本文中称为释放状态的第一位置上，该可移动层的位置距离一固定的局部反射层相对远。在第二位置上，该可移动层的位置更近地靠近该局部反射层。根据可移动反射层的位置而定，从这两个层反射的入射光会以相长或相消方式干涉，从而形成各像素的总体反射或非反射状态。
在图1中显示的像素阵列部分包括两个相邻的干涉式调制器12a和12b。在左侧的干涉式调制器12a中，显示一可移动的高度反射层14a处于一释放位置，该释放位置距一固定的局部反射层16a一预定距离。在右侧的干涉式调制器12b中，显示一可移动的高度反射层14b处于一受激励位置处，该受激励位置靠近固定的局部反射层16b。
固定层16a、16b导电、局部透明且局部为反射性，并可通过例如在一透明衬底20上沉积将一个或多个各自为铬及氧化铟锡的层而制成。所述各层被图案化成平行条带，且可形成一显示装置中的行电极，如将在下文中所进一步说明。可移动层14a、14b可形成为由沉积在支柱18顶部的一个或多个沉积金属层(与行电极16a、16b正交)及一沉积在支柱18之间的中间牺牲材料构成的一系列平行条带。在牺牲材料被蚀刻掉以后，这些可变形的金属层与固定的金属层通过一规定的气隙19隔开。这些可变形层可使用一具有高度导电性及反射性的材料(例如铝)，且该些条带可形成一显示装置中的列电极。
在未施加电压时，空腔19保持位于层14a、16a之间，且可变形层处于如图1中像素12a所示的一机械弛豫状态。然而，在向一所选行和列施加电位差之后，在所述行和列电极相交处的对应像素处形成的电容器被充电，且静电力将这些电极拉向一起。如果电压足够高，则可移动层发生形变，并被压到固定层上(可在固定层上沉积一介电材料(在该图中未示出)，以防止短路，并控制分隔距离)，如图1中右侧的像素12b所示。无论所施加的电位差极性如何，该行为均相同。由此可见，可控制反射与非反射像素状态的行/列激励与传统的LCD及其他显示技术中所用的行/列激励在许多方面相似。
图2至图5B显示一个在一显示应用中使用一干涉式调制器阵列的实例性过程及系统。图2为一系统方框图，该图显示一可体现本发明各方面的电子装置的一个实施例。在该实例性实施例中，所述电子装置包括一处理器21-其可为任何通用单芯片或多芯片微处理器，例如ARM、Pentium、Pentium II、PentiumIII、Pentium IV、PentiumPro、8051、MIPS、Power PC、ALPHA，或任何专用微处理器，例如数字信号处理器、微控制器或可编程门阵列。按照业内惯例，可将处理器21配置成执行一个或多个软件模块。除执行一个操作系统外，还可将该处理器配置成执行一个或多个软件应用程序，包括网页浏览器、电话应用程序、电子邮件程序或任何其它软件应用程序。
在一实施例中，处理器21还配置成与一阵列控制器22进行通信。在一实施例中，该阵列控制器22包括向一像素阵列30提供信号的一行驱动电路24及一列驱动电路26。图1中所示的阵列剖面图在图2中以线1-1示出。对于MEMS干涉式调制器，所述行/列激励协议可利用图3所示的这些装置的滞后性质。其可能需要例如一10伏的电位差来使一可移动层自释放状态变形至受激励状态。然而，当所述电压自该值降低时，在所述电压降低回至10伏以下时，所述可移动层将保持其状态。在图3的实例性实施例中，在电压降低至2伏以下之前，可移动层不会完全释放。因此，在图3所示的实例中，存在一大约为3-7伏的电压范围，在该电压范围内存在一施加电压窗口，在该窗口内所述装置稳定在释放或受激励状态。在本文中将其称为“滞后窗口”或“稳定窗口”。对于一具有图3所示滞后特性的显示阵列而言，行/列激励协议可设计成在行选通期间，向所选通行中将被激励的像素施加一约10伏的电压差，并向将被释放的像素施加一接近0伏的电压差。在选通之后，向像素施加一约5伏的稳态电压差，以使其保持在行选通使其所处的任何状态。在被写入之后，在该实例中，每一像素均承受一处于3-7伏的“稳定窗口”内的电位差。该特性使图1所示的像素设计在相同的所施加电压条件下稳定在一既有的激励状态或释放状态。由于干涉式调制器的每一像素，无论处于激励状态还是释放状态，实质上均是一由所述固定反射层及移动反射层所构成的电容器，因此，该稳定状态可在一滞后窗口内的电压下得以保持而几乎不消耗功率。如果所施加的电位恒定，则基本上没有电流流入像素。
在典型应用中，可通过根据第一行中所期望的一组受激励像素确定一组列电极而形成一显示帧。此后，将一行脉冲施加于第1行的电极，从而激励与所确定的列线对应的像素。此后，将所确定的一组列电极变成与第二行中所期望的一组受激励像素对应。此后，将一脉冲施加于第2行的电极，从而根据所确定的列电极来激励第2行中的相应像素。第1行的像素不受第2行的脉冲的影响，因而保持其在第1行的脉冲期间所设定到的状态。可按顺序性方式对全部系列的行重复上述步骤，以形成所述的帧。通常，通过以某一所期望帧数/秒的速度连续重复该过程来用新显示数据刷新及/或更新这些帧。还有很多种用于驱动像素阵列的行及列电极以形成显示帧的协议亦为人们所熟知，且可用于本发明。
图4、5A及图5B显示一种用于在图2所示的3×3阵列上形成一显示帧的可能的激励协议。图4显示一组可用于具有图3所示滞后曲线的像素的可能的行及列电压电平。在图4的实施例中，激励一像素包括将相应的列设定至-Vbias，并将相应的行设定至+ΔV，其可分别对应于-5伏及+5伏。释放像素则是通过将相应的列设定至+Vbias并将相应的行设定至相同的+ΔV、由此在所述像素两端形成一0伏的电位差来实现。在那些其中行电压保持0伏的行中，像素稳定于其最初所处的状态，而与该列处于+Vbias还是-Vbias无关。
图5B为一显示一系列行及列信号的时序图，该些信号施加于图2所示的3×3阵列，其将形成图5A所示的显示布置，其中受激励像素为非反射性。在写入图5A所示的帧之前，像素可处于任何状态，在该实例中，所有的行均处于0伏，且所有的列均处于+5伏。在这些所施加电压下，所有的像素稳定于其现有的受激励状态或释放状态。
在图5A所示的帧中，像素(1，1)、(1，2)、(2，2)、(3，2)及(3，3)受到激励。为实现这一效果，在第1行的“行时间”期间，将第1列及第2列设定为-5伏，将第3列设定为+5伏。此不会改变任何像素的状态，因为所有像素均保持处于3-7伏的稳定窗口内。此后，通过一自0伏上升至5伏然后又下降回至0伏的脉冲来选通第1行。由此激励像素(1，1)和(1，2)并释放像素(1，3)。阵列中的其它像素均不受影响。为将第2行设定为所期望状态，将第2列设定为-5伏，将第1列及第3列设定为+5伏。此后，向第2行施加相同的选通脉冲将激励像素(2，2)并释放像素(2，1)和(2，3)。同样，阵列中的其它像素均不受影响。类似地，通过将第2列和第3列设定为-5伏，并将第1列设定为+5伏对第3行进行设定。第3行的选通脉冲将第3行像素设定为图5A所示的状态。在写入帧之后，行电位为0，而列电位可保持在+5或-5伏，且此后显示将稳定于图5A所示的布置。应了解，可对由数十或数百个行和列构成的阵列使用相同的程序。还应了解，用于实施行和列激励的电压的时序、顺序及电平可在以上所述的一般原理内变化很大，且上述实例仅为实例性，任何激励电压方法均可用于本发明。
按照上述原理运行的干涉式调制器的详细结构可千变万化。例如，图6A-6C显示移动镜结构的三种不同实施例。图6A为图1所示实施例的剖面图，其中在正交延伸的支撑件18上沉积一金属材料条带14。在图6B中，可移动的反射材料14仅在隅角处在系链32上附接至支撑件。在图6C中，可移动的反射材料14悬吊在一可变形层34上。由于反射材料14的结构设计及所用材料可在光学特性方面得到优化，且可变形层34的结构设计和所用材料可在所期望机械特性方面得到优化，因此该实施例具有若干优点。在许多公开文件中，包括例如第2004/0051929号美国公开申请案中，描述了各种不同类型干涉装置的生产。可使用很多种人们所熟知的技术来制成上述结构，包括一系列材料沉积、图案化及蚀刻步骤。
图7A-7D显示上述两种干涉式调制器结构的某些方面。图7A显示一在一实例性实施例中一干涉式调制器50的简化的工作原理图。干涉式调制器50包括一衬底20、一位于衬底20上的光学介电层16、两个支撑件18及一连接至支撑件18的镜14，其连接方式使其表面定向于一与介电层16的上表面平行且在横向上对准的平面中。图7A中显示镜14处于一在机械上得以释放的第一状态，以在例如自一观看位置110观看干涉式调制器时使镜14反射入射光。光学介电层16与镜14之间的距离被调节为仅反射一所选波长的光。在前述第5,835,255号美国专利及前述第09/966,843号美国专利申请案中对选择几何形状及材料的方法的详情进行了详细说明。在图7A中，支撑件18、镜14及光学介电层16界定一光学空腔55。
图7B显示图6A所示干涉式调制器50的一简化的工作原理图，其中镜14处于一第二状态。在图7B中，镜14朝光学介电层16移动，从而时光学空腔55凹下。镜14是通过在耦接至镜14与光学介电层16的电极之间提供一电压电位而移动。通过将镜14移动至一接触或紧靠光学介电层16的第二状态，会使干涉式调制器50在第二状态中的光学性质相对在第一状态中发生变化。干涉式调制器50在第二状态(图7B)中反射的光的颜色不同于干涉式调制器50在第一状态中反射的光。在一种构造中，在第二状态中，光的干涉方式使得在自观看位置110观看时，干涉式调制器表现为黑色。
图7C及7D分别显示一干涉式调制器60的另一实施例处于一第一“打开”状态及一第二“关闭”状态。与图7A及7B所示实施例相比，干涉式调制器60的该实施例提供一增大的可用的镜尺寸。返回参见图7B，镜14的有些区域因弯曲入凹下的光学空腔55内而不能朝观看位置110提供最大反射率。将图7D所示的镜34与图7B所示的镜14相比可以发现，图7D所示的镜34基本上占据对应于光学空腔66中光学介电层16的表面区域的整个区域。在图7D所示实施例中，可使用镜34的反射面来反射光，因为其不需要在干涉式调制器60受到激励时使镜弯曲入凹下的光学空腔66内。在图7C及7D中，衬底光学介电层16、两个支撑件18及衬底20相对于图7A及7B所示的干涉式调制器50保持不变。关于该结构以及该改良的结构的制作的详细说明可见于前述第09/966,843号美国专利中。
图8A及8B显示一显示器中一部分的一实例，该显示器具有可包含一导电光罩的显示元件。图8A及8B显示一包含一干涉式调制器阵列的显示器的一实例性部分。导电光罩可用于图8A及8B所示阵列中，及用于其中适用于遮罩显示器的某些区域以遮挡环境光并适于在显示器中形成一电路的电并联连接的任一类型的显示器中。图8A显示该阵列的复数个像素12。图8B显示位于干涉式调制器阵列的复数个像素上的支撑件18的一实例，可对支撑件18进行遮罩以改善显示器的光学响应。为改善显示器的光学响应(例如反差)，可能希望使自阵列的某些区域反射的光最少化。为提高受激励像素与未受激励像素之间的反差比，可使用黑色光罩对干涉式调制器中任一会增强显示器在黑色状态中的反射的区域进行遮罩(例如在该结构与射入干涉式调制器的光之间布置一光罩)。某些可加以遮罩以对显示器产生有利影响的区域包括但不限于：各干涉式调制器72之间的行切口(图8A)、支撑件18、连接至及/或围绕支撑件18的可移动镜层的弯曲区域、及相邻干涉式调制器76的可移动镜层之间的区域(图8A)。光罩可布置于如下区域中：这些区域使光罩与干涉式调制器的可移动镜相间隔，例如以使环境光可传播至并自可移动镜反射，但除可移动镜以外的区域被遮罩从而禁止自被遮罩区域中的任何结构反射环境光。这些被遮罩的区域可称作“非有效区域”，因为其为静态，例如这些区域不包含可移动的镜。在某些实施例中，所述光罩可为导电性，以使反射光最少化并提供一个或多个可用于光学元件的电路径。在某些实施例中，光罩的布置方式可使射入干涉式调制器的光照射于被遮罩的区域上或可移动的镜上。在其他实施例中，对非有效区域的至少一部分进行遮罩。
显示元件可对驱动信号作出响应的速度可依赖于用于将驱动信号载送至显示元件的控制线(例如行电极及列电极)的电阻及电容。由于人们希望在大的显示器上观看视频并希望具有高分辨率显示器，因而需要使控制线的电阻最小化。出于这些原因，合意的情况是，增大信号线的电导、同时最大限度地减少显示器中额外的被动光学内含件的数量。一种降低电阻的方法是为控制线提供一个或多个电并联连接。可提供一双用途光罩来增大反差比并同时用作驱动信号总线层。例如，在一实施例中，可使用导电光罩为一显示元件阵列(例如干涉式调制器)中的一个或多个行电极或列电极形成一电并联连接。应了解，所述电并联连接可按多种方式设计，此视显示元件的应用及类型而定。
图9显示一根据一实施例的显示器100的简化表示形式的剖面图。该显示器包含两个光学组件，在该实施例中，这两个光学组件为干涉式调制器104。如上文所述，干涉式调制器装置104包含一反射膜结构，在沿箭头106所示的方向朝一衬底202驱动可移动的有效区域时，所述反射膜会产生所需的光学响应。在第5,835,255号美国专利中已对干涉式调制器装置104的大体运行进行了说明。在图9中，参考编号108表示干涉式调制器104的非有效区域。通常，希望非有效区域108为光吸收性区域或者起一黑色光罩的作用，以在观看者自一由观看箭头110所示的方向观看显示器100时，不会因非有效区域108反射环境光而使干涉式调制器装置104所产生的光学响应降格。在其他实施例中，可能希望使用一不同于黑色的颜色的光罩(例如绿色、红色、蓝色、红色等)来遮罩非有效区域108。为从光罩获得其他功能，光罩可包含一种或多种可连接至显示器100中的电路并全部或部分地用于提供一条或多条电总线的导电材料。
一种用于非有效区域108的光罩可由选择成具有可吸收或衰减光的光学响应的材料制成。用于制成光罩的一种或多种材料为导电性材料。根据本发明的实施例，可将每一非有效区域108的光罩制成为一薄膜叠层。例如，在一实施例中，所述薄膜叠层可包含一夹于两个反光的铬层之间的非光吸收性介电层，此将在下文中予以更全面的说明。在其他实施例中，非有效区域108可包含单层可衰减或吸收光的有机或无机材料、及一层例如铬或铝等导电材料。
图10显示一根据本发明一实施例的干涉式调制器装置200的一剖面。干涉式调制器装置200包括一有源组件，该有源组件包括一电极反射层204、一氧化物层206、一气隙208、及一设置于一衬底202上的机械薄膜210。本文中的用语“设置于一衬底上”是一广义用语，其表示所提及的结构、层、光学装置、干涉式调制器、双稳装置、电极、薄膜叠层、支撑件、电极、光罩或其他所提及的形体位于一衬底上，并可接触但未必必需接触该衬底，除非予以明示。机械薄膜210由支撑件212支撑于适当位置上。在使用中，将机械薄膜210驱动至接触氧化物层206，以在自箭头110所示的方向观看时产生所需的光学响应。
可使用一导电光罩对支撑件212、干涉式调制器200中上面形成有支撑件212的区域、及其他不属于干涉式调制器的有源组件的一部分的区域(例如由所圈划的区域230指示的区域)进行遮罩，以防止或减少自这些区域发生的光反射，否则，自这些区域发生的光反射会干扰有源干涉式调制器组件的所需的光学响应。根据一实施例，所述光罩可制成为一包含至少一个导电薄膜的薄膜叠层，所述导电薄膜经选择以使所述叠层的光学性质呈光吸收性及导电性。根据一实施例，所述光罩可在形成干涉式调制器的有源光学组件之前形成于衬底202上。干涉式调制器200的支撑件212可执行数种功能。首先，支撑件212用作可移动的机械薄膜210的机械支撑件。其次，如果支撑件212包含导电材料，则支撑件212可为导电光罩提供一电连接。例如，当一支撑件212连接至一导电层222时，支撑件212及导电层222可提供一个或多个用于向可移动机械薄膜210施加电压的导电路径，此将在下面的图17-18及20-22中加以显示。
如图10所示，干涉式调制器200包括一包含一薄膜叠层的导电光罩。在一实施例中，所述光罩包括一第一反射性铬层、一氧化物中间层220及一第二反射性铬层222。也可使用其他导电材料来形成光罩。例如，在另一实施例中，所述光罩包括一包含如下的薄膜叠层：一铬层218、一氧化物中间层220(例如SiO2)、及一铝层222。干涉式调制器200包括另一介于氧化物中间层220与电极反射层204之间的氧化物层226。所述光罩的一个或多个导电层可连接至干涉式调制器200的其他组件，以提供一电总线。例如，所述光罩可连接至一个或多个列电极或行电极。在一实施例中，铬层222通过包含导电材料的通路224连接至电极反射层204。在导电光罩构造中所需使用以使导电光罩用作电总线的连接线可视具体应用而定。在某些实施例中，电极反射层204包含位于不同位置上的电隔离体228(例如间隙或非导电性材料)，以对干涉式调制器的各导电部分(例如电极反射层204或支撑件212)进行电隔离并将光罩适当地构造成表现出所需的总线功能。
下文将参照图11-17来揭示一制作导电光罩的实施例。图11为一剖面图，其显示在一具有导电光罩402的MEMS装置(例如图1所示的MEMS装置)中可包含的各种层。在图11中仅显示MEMS装置中包含导电光罩402的一部分，MEMS装置的其余部分由虚线方框203表示。图中显示由虚线圆圈表示的导电光罩402制作于一衬底202上。光罩402包含三个薄膜层：包括一第一反射层218、一氧化物层220及一第二反射层222。第一反射层218及第二反射层222可包含既具有反射性又具有导电性的材料，例如铬、铝或银。对于某些实施例，可将导电光罩402构造为一静态干涉式调制器，该静态干涉式调制器的构造方式使反射光最少化，例如显示黑色。在其他实施例中，可将导电光罩402构造为一反射所选颜色的光的静态干涉式调制器。构成导电光罩402的薄膜可为在制作干涉式调制器组件中所用的相同的薄膜，从而使得可使用相同的沉积参数来制作光罩与干涉式调制器组件。导电光罩402可在围绕显示装置对电信号进行选路时提供更大的灵活性，并通过为信号提供电并联连接而有助于使向干涉式调制器提供信号的电路的电阻最小化。
现在将参照图12-17来说明在制造一导电光罩402及MEMS装置中的各个阶段。
图12为在制造一具有导电光罩的MEMS装置中的一个阶段的剖面图，其显示一第一反射性光罩层218沉积于一衬底202上。根据一实施例，在一其中制备衬底202的初始预备步骤(例如清洗)之后，通过将一第一反射性光罩层218溅射涂覆至衬底202上来沉积第一反射性光罩层218。在一实例性实施例中，第一反射性光罩层218的厚度可约为60埃。
图13为在制造一具有导电光罩的MEMS装置中的一个阶段的剖面图，其显示图12所示的第一反射性光罩层218的某些部分被移除。对于该制作而言，在如图12所示沉积第一反射性光罩层218之后，使用传统技术将第一反射性光罩层218图案化及显影，以留下铬的两个或多个部分或露出部分，此可用作一用作光罩的薄膜叠层的基底层。
图14为在制造一具有导电光罩的MEMS装置中的一个阶段的剖面图，其显示在图13所示实施例上制成的其他层。如图14所示，在衬底202上沉积一覆盖第一反射性光罩层218的氧化物层220。在一实施例中，氧化物层220的深度约为300至800埃。该层可通过将SiO2溅射涂覆至图14所示实施例上来涂覆。氧化物层220的厚度可取决于光罩所需的颜色(例如黑色)状态的品质，其也可取决于光罩所需的颜色。
在氧化物层220上沉积一第二反射层222，并将第二反射层222图案化及显影，以形成对应于第一反射层218的各部分，从而形成一包含一薄膜叠层的导电光罩。然后，在第二反射层222上沉积一氧化物层226。可在氧化物层226中形成通路224，以便可将第二反射层222连接至(例如)一支撑件212(如图16中所示)。可在沉积于氧化物层226上的电极反射层204中形成电隔离体228。电极反射层204通常约为60埃厚，其确切厚度取决于最终显示器所需的亮度：该层越薄，所制成的显示器即越亮。根据所需的构造及导电光罩的应用，电极(例如电极反射层204)的各部分可通过在电极反射层204中形成一个或多个隔离体228来进行电隔离。
此后，分别将一氧化物层206及一牺牲层209溅射涂覆至电极反射层204上。根据一实施例，氧化物层206可包含氧化硅并可为约300至800埃厚。根据一实施例，牺牲层209可包含钼并且通常可为约0.2至1.2微米厚。
图15为在制造一具有导电光罩的MEMS装置中的一个阶段的剖面图，其显示实施一图案化及蚀刻步骤来形成支撑件凹槽。根据该实施例，实施图案化及一蚀刻步骤来形成穿过氧化物层226延伸至通路224及第二反射层222的凹槽。可在氧化物层226中形成通路224，以使第二反射层222可连接至一支撑件212(在图16中显示)。根据一实施例，为在导电光罩的第二反射层222与MEMS装置的另一部分(例如图17中所示的机械薄膜210)之间形成电连接，支撑件212可穿过通路212延伸至第二反射层222。在另一实施例中，在氧化物层226中形成通路224并使用一连接至支撑件的导电材料对通路224进行填充。
图16为在制造一具有导电光罩的MEMS装置中的一个阶段的剖面图，其显示在图15所示凹槽中形成支撑件212。支撑件212提供一用于支撑可移动的机械薄膜210(图17)的结构，其可通过如下方式形成于凹槽中：在薄膜叠层上旋涂负性光阻剂材料，然后通过一适当的光罩将其曝光并显影而形成支撑件212。在该实施例中，电隔离体228使支撑件212与电极反射层204相隔离。在支撑件212包含导电材料时，可使用此种隔离体228将支撑件212与电极反射层204相隔离。
图17为在制造一具有导电光罩的MEMS装置中的一个阶段的剖面图，其显示在图16所示实施例上沉积一机械薄膜210。机械薄膜210是通过溅射涂覆至牺牲层209上来沉积而成。此后，移除牺牲层209，从而留下一气隙208。在一实施例中，机械薄膜210包含一种铝合金。在移除牺牲层209后，形成一气隙208，当干涉式调制器受到激励时，机械薄膜210即通过该气隙208移动。
图17还显示第二反射层222、支撑件212与机械薄膜210之间的电连接的一实施例。此处，导电光罩包含一介电叠层，该介电叠层包含一第一反射层218、一氧化物层220及一第二反射层222，第二反射层222可遮罩与有效区域相间隔的非有效区域(例如支撑件212)。在某些实施例中，导电光罩可包含铬、银、铝或一介电叠层，以使一种或多种用于形成光罩的材料能够导电。
在该实施例中，光罩为不可移动(例如静态)的干涉式元件，其经构造以引起光的干涉以使其反射很少量的光并表现为黑色。该光学层可由ITO/Cr、ITO/Mo、ITO/Ti、Cr、Mo、Ti或其他具有类似性质的材料制成。介电层通常由SiO2或其他介电材料形成，反射体通常由铝、铬或其他金属材料形成。
通过将光罩制成为包含导电材料并通过使用经适当布置的与所需行电极及/或列电极的连接线，可使用所述光罩来减小所述行电极及/或列电极的电阻。例如，如果在一包含复数个干涉式调制器的阵列中使用一构造成始终显示黑色的导电光罩，则所述导电光罩也可用作一导电层来降低在所述阵列中用于向排成行及/列的显示元件载送信号的行电极及/或列电极的电阻。在该实施例中，在介电层226中形成有通路，以提供一用于支撑件212的凹槽并使其可连接至作为导电光罩的一部分的第二反射层222。应了解，还存在许多其他可能的利用导电光罩的实施例。在某些其中光罩包含一第一导电层218及一第二导电层222的实施例中，两个导电层均可用作一电总线的一部分。在某些实施例中，两个导电层可用作同一电总线的一部分。在其他实施例中，这些导电层分别用作相独立的电总线的一部分。
图18-22显示在一干涉式调制器中为一电极提供电并联连接的导电光罩的各种实例性实施例。这些实施例可使用与上文针对图17所示实施例所述的类似技术来制作。图18-22中所示的导电光罩构造成不可移动的干涉式元件，其为向调制元件施加电压提供一个或多个电并联连接。图18为一MEMS装置的剖面图，其显示一导电光罩的一实施例，其中在光罩的两个层与一可移动的机械薄膜之间形成一电并联连接。在图18中，光罩包含第一反射层218及第二反射层222。所述光罩形成一至机械薄膜210-其为干涉式调制器中其中一个电极的一部分-的电并联连接，如画斜线的区域所示。第一反射层218通过连接器229电连接至第二反射层222。支撑件212由一种导电材料(例如本文所述的其中一种导电材料)制成，并连接至第二反射层222。电隔离体228使支撑件212与电极反射层204电隔离。支撑件212连接至可移动的机械薄膜210，以使第一反射层218与第二反射层222形成一与机械薄膜210的电并联连接。
图19为一MEMS装置的剖面图，其显示一导电光罩的一实施例，其中在光罩的两个导电层与一不可移动的电极层204之间形成一电并联连接。第一反射层218与第二反射层222形成一至电极反射层204的电并联连接，如画斜线的区域所示。第一反射层218通过连接器231电连接至第二反射层222，电连接器231还将第一反射层218与第二反射层222连接至电极反射层204。电连接器228使支撑件212与电极反射层204电隔离。
图20为一MEMS装置的剖面图，其显示一导电光罩的一实施例，其中在光罩的一第一反射层218与可移动的机械薄膜210之间形成一电并联连接。光罩的第一反射层218通过贯穿支撑件212的导电连接器234电连接至机械薄膜210。连接器234通过由不导电材料形成的电隔离体232与支撑件212及光罩的第二反射层222相隔离。电隔离体228使支撑件212与电极反射层204相隔离。在其中支撑件212并非由导电材料形成的实施例中，可不必使用电隔离体232及电隔离体228来使支撑件212与周围的导电材料电隔离。在该实施例中，仅第一反射层218形成一至机械薄膜210的电并联连接。
图21为一MEMS装置的剖面图，其显示一导电光罩的一实施例，其中在光罩的一第一反射层218、一第二反射层222与一可移动的机械薄膜210之间形成一电并联连接。该实施例类似于图21所示实施例，只是第一反射层218通过电连接器238连接至第二反射层222。第一反射层218及第二反射层222通过电连接器236电连接至机械薄膜210，从而在导电光罩的两个层与机械薄膜210之间形成一电并联连接。在该实施例中，支撑件212并非由导电材料形成，因而将不必使用隔离体232(尽管为清楚起见仍在图中加以显示)使支撑件212与周围的导电材料电隔离。
图22为一MEMS装置的剖面图，其显示一导电光罩的一实施例，其中在光罩的一第一反射层218与电极层204之间形成一电并联连接，如画斜线的区域所示。在光罩的一第二反射层222与一可移动的机械薄膜210之间形成另一电并联连接，如画交叉阴影线的区域所示。在图22中，通过经由电连接器240将光罩的第一反射层218电连接至电极层204而形成第一电并联连接。电隔离体228使电极层204与导电支撑件212相隔离。电隔离体233使电连接器240与光罩的第二反射层222相隔离。通过将光罩的第二反射层222连接至与机械薄膜210相连的支撑件212而形成第二电并联连接。
图23A及23B为显示一显示装置2040的一实施例的系统方块图。显示装置2040例如可为蜂窝式电话或手机。然而，显示装置2040的相同组件及其稍作变化的形式也可作为例如电视及便携式媒体播放器等各种类型显示装置的例证。
显示装置2040包括一外壳2041、一显示器2030、一天线2043、一扬声器2045、一输入装置2048及一麦克风2046。外壳2041通常由所属领域的技术人员所熟知的众多种制造工艺中的任一种工艺制成，包括注射成型及真空成形。此外，外壳2041可由众多种材料中的任一种材料制成，包括但不限于塑料、金属、玻璃、橡胶及陶瓷、或其一组合。在一实施例中，外壳2041包括可拆式部分(未图示)，这些可拆式部分可与其他具有不同颜色的、或包含不同标识、图片或符号的可拆式部分换用。
实例性显示装置2040的显示器2030可为众多种显示器中的任一种，包括本文所述的双稳显示器。在其他实施例中，显示器2030包括例如上文所述的等离子体显示器、EL、OLED、STNLCD或TFTLCD等平板显示器、或例如CRT或其他管式装置等非平板显示器，这些显示器为所属领域的技术人员所熟知。然而，为便于说明本实施例，显示器2030包括一如本文所述的干涉式调制器显示器。
在图23B中示意性地显示实例性显示装置2040的一实施例的组件。所示实例性显示装置2040包括一外壳2041，并可包括其他至少部分封闭于其中的组件。例如，在一实施例中，实例性显示装置2040包括一网络接口2027，该网络接口2027包括一耦接至一收发器2047的天线2043。收发器2047连接至处理器2021，处理器2021又连接至调节硬件2052。调节硬件2052可配置成对一信号进行调节(例如对一信号进行滤波)。调节硬件2052连接至一扬声器2045及一麦克风2046。处理器2021还连接至一输入装置2048及一驱动控制器2029。驱动控制器2029耦接至一帧缓冲器2028并耦接至阵列驱动器2022，阵列驱动器2022又耦接至一显示阵列2030。一电源2050根据具体实例性显示装置2040的设计的要求为所有组件供电。
网络接口2027包括天线2043及收发器2047，以使实例性显示装置2040可通过网络与一个或多个装置进行通信。在一实施例中，网络接口2027还可具有某些处理功能，以降低对处理器2021的要求。天线2043是所属领域的技术人员所知的用于发射及接收信号的任一种天线。在一实施例中，该天线根据IEEE802.11标准(包括IEEE 802.11(a)，(b)，或(g))来发射及接收RF信号。在另一实施例中，该天线根据蓝牙(BLUETOOTH)标准来发射及接收RF信号。倘若为蜂窝式电话，则该天线被设计成接收CDMA、GSM、AMPS或其他用于在无线手机网络中进行通信的已知信号。收发器2047对自天线2043接收的信号进行预处理，以使其可由处理器2021接收及进一步处理。收发器2047还处理自处理器2021接收到的信号，以使其可通过天线2043自实例性显示装置2040发射。
在一替代实施例中，可由一接收器取代收发器2047。在又一替代实施例中，可由一图像源取代网络接口2027，该图像源可存储或产生拟发送至处理器2021的图像数据。例如，该图像源可为一含有图像数据的数字视频光盘(DVD)或硬盘驱动器、或一产生图像数据的软件模块。
处理器2021通常控制实例性显示装置2040的总体运行。处理器2021自网络接口2027或一图像源接收数据(例如压缩的图像数据)，并将该数据处理成原始图像数据或处理成一种易于处理成原始图像数据的格式。然后，处理器2021将处理后的数据发送至驱动控制器2029或发送至帧缓冲器2028进行存储。原始数据通常是指可识别一图像内每一位置处的图像特性的信息。例如，所述图像特性可包括颜色、饱和度及灰度级。
在一实施例中，处理器2021包括一微控制器、CPU、或逻辑单元来控制实例性显示装置2040的运行。调节硬件2052通常包括用于向扬声器2045发送信号及用于自麦克风2046接收信号的放大器及滤波器。调节硬件2052可为实例性显示装置2040内的离散组件，或者可并入处理器2021或其他组件内。
驱动控制器2029直接自处理器2021或自帧缓冲器2028接收由处理器2021产生的原始图像数据，并适当地将原始图像数据重新格式化以便高速传输至阵列驱动器2022。具体而言，驱动控制器2029将原始图像数据重新格式化成一具有光栅状格式的数据流，以使其具有一适合于扫描显示阵列2030的时间次序。然后，驱动控制器2029将格式化后的信息发送至阵列驱动器2022。尽管驱动控制器2029(例如LCD控制器)通常是作为一独立的集成电路(IC)与系统处理器2021相关联，然而这些控制器也可按许多种方式进行构建。其可作为硬件嵌入于处理器2021中、作为软件嵌入于处理器2021中、或以硬件形式与阵列驱动器2022完全集成在一起。
通常，阵列驱动器2022自驱动控制器2029接收格式化后的信息并将视频数据重新格式化成一组平行的波形，该组平行的波形每秒许多次地施加至来自显示器的x-y像素矩阵的数百条、有时数千条引线。
在一实施例中，驱动控制器2029、阵列驱动器2022、及显示阵列2030适用于本文所述的任一类型的显示器。举例而言，在一实施例中，驱动控制器2029是一传统的显示控制器或一双稳显示控制器(例如一干涉式调制器控制器)。在另一实施例中，阵列驱动器2022是一传统驱动器或一双稳显示驱动器(例如一干涉式调制器显示器)。在一实施例中，一驱动控制器2029与阵列驱动器2022集成在一起。这种实施例在例如蜂窝式电话、手表及其他小面积显示器等高度集成的系统中很常见。在又一实施例中，显示阵列2030是一典型的显示阵列或一双稳显示阵列(例如一包含一干涉式调制器阵列的显示器)。
输入装置2048使用户能够控制实例性显示装置2040的运行。在一实施例中，输入装置2048包括一小键盘(例如QWERTY键盘或电话小键盘)、一按钮、一开关、一触敏屏幕、一压敏或热敏薄膜。在一实施例中，麦克风2046是实例性显示装置2040的输入装置。当使用麦克风2046向该装置输入数据时，可由用户提供语音命令来控制实例性显示装置2040的运行。
电源2050可包含所属技术领域内众所周知的许多种能量存储装置。例如，在一实施例中，电源2050为一可再充电的蓄电池，例如一镍-镉蓄电池或一锂离子蓄电池。在另一实施例中，电源2050是一可再生能源、电容器或太阳能电池，包括塑料太阳能电池及太阳能电池漆。在另一实施例中，电源2050构造成自墙上的插座接收电力。
在某些实施方案中，控制可编程性如上文所述存在于一驱动控制器中，该驱动控制器可位于电子显示系统中的数个位置上。在某些情形中，控制可编程性存在于阵列驱动器2022中。所属领域的技术人员将知，可在任意数量的硬件及/或软件组件中及在不同的构造中实施上述优化。
尽管上文详细说明是显示、说明及指出本发明的适用于各种实施例的新颖特征，然而应了解，所属领域的技术人员可在形式及细节上对所示装置或工艺的作出各种省略、替代及改变，此并不背离本发明的精神。本发明的范畴是由随附权利要求书而非由上文说明来指示。所有仍归属于权利要求书的等价意义及范围内的修改均将涵盖在权利要求书的范畴内。
Claims (38)
1、一种光学装置，其包括：
一衬底；
一布置于所述衬底上的干涉式光调制元件，所述调制元件具有一随一施加至所述调制元件的电压而变化的光学特性；及
一布置于所述衬底上并与所述调制元件相间隔的导电光罩，所述光罩电耦接至所述调制元件以为将电压施加至所述调制元件提供一个或多个电路径。
2、如权利要求1所述的装置，其中所述光罩经构造以显现黑色。
3、如权利要求1所述的装置，其中所述光罩经构造以显现一除黑色以外的颜色。
4、如权利要求1所述的装置，其进一步包括一电耦接至所述光罩以形成一电并联连接的列电极。
5、如权利要求1所述的装置，其进一步包括一电耦接至所述光罩以形成一电并联连接的行电极。
6、如权利要求1所述的装置，其中所述光罩包括一薄膜叠层。
7、如权利要求6所述的装置，其中所述薄膜叠层包括一第一反射层及一第二反射层。
8、如权利要求7所述的装置，其中所述第一反射层电连接至一第一电极且所述第二反射层电连接至一第二电极。
9、如权利要求7所述的装置，其中所述第一反射层与所述第二反射层电连接至同一电极。
10、如权利要求1所述的装置，其中所述光罩通过一个或多个导电通路电耦接至所述调制元件。
11、如权利要求1所述的装置，其进一步包括：
一处理器，其与所述干涉式光调制元件及所述导电光罩中的至少一个电通信，所述处理器经配置以处理图像数据；及
一与所述处理器电通信的存储装置。
12、如权利要求11所述的装置，其进一步包括一驱动电路，所述驱动电路经配置以向所述干涉式光调制元件及所述导电光罩中的至少一个发送至少一个信号。
13、如权利要求12所述的装置，其进一步包括一控制器，所述控制器经配置以向所述驱动电路发送所述图像数据的至少一部分。
14、如权利要求11所述的装置，其进一步包括一图像源模块，所述图像源模块经配置以向所述处理器发送所述图像数据。
15、如权利要求14所述的装置，其中所述图像源模块包括一接收器、收发器及发射器中的至少一个。
16、如权利要求11所述的装置，其进一步包括一输入装置，所述输入装置经配置以接收输入数据并将所述输入数据传送至所述处理器。
17、一种向一显示器的复数个干涉式光学元件提供一电信号的方法，可通过向所述干涉式光学元件施加一电压来分别激励所述干涉式光学元件，所述方法包括：
将一导电光罩电耦接至一个或多个干涉式光学元件；及
向所述光罩施加一电压以激活所述一个或多个干涉式光学元件。
18、如权利要求17所述的方法，其中所述光罩包括一薄膜叠层。
19、如权利要求18所述的方法，其中所述薄膜叠层包括一导电反射层，一电压施加至所述导电反射层以激活所述一个或多个干涉式光学元件。
20、如权利要求17所述的方法，其中所述光罩包括一个或多个干涉式元件。
21、如权利要求17所述的方法，其中所述光罩为光吸收性。
22、一种制作一干涉式光学装置的方法，所述方法包括：
在一衬底上形成一导电光罩，其中所述光罩吸收光；
在所述衬底上与所述光罩相间隔地形成一干涉式光学组件，其中所述干涉式光学组件具有一受驱动状态及一未受驱动状态，所述干涉式光学组件响应于一所施加的电压而在所述受驱动状态与所述未受驱动状态之间变换，每一状态均具有一对入射光的特征光学响应；及
将所述光罩电连接至所述干涉式光学组件，以使所述光罩的至少一部分提供一用于向所述干涉式光学组件施加所述电压的总线。
23、如权利要求22所述的方法，其中所述光罩包括一个或多个干涉式元件。
24、如权利要求22所述的方法，其中所述光罩包括一薄膜叠层。
25、如权利要求24所述的方法，其中所述薄膜叠层包括一夹于两个反光材料之间的非光吸收性介电材料。
26、如权利要求25所述的方法，其中所述反光材料之一个或多个包含银、铝或铬。
27、一种通过如权利要求16所述的方法形成的干涉式光学装置。
28、一种制作一光学装置的方法，所述光学装置包括至少一个形成于一透明衬底上的有效干涉式光学组件，所述方法包括：
识别出所述衬底上的一将为光吸收性的区域，其中所述识别出的区域在横向上偏离所述至少一个有源干涉式光学组件；及
在制作所述至少一个有源干涉式光学组件之前，在所述识别出的区域上制作一导电的光吸收性光罩，其中所述光罩连接至所述有源干涉式光学组件。
29、如权利要求28所述的方法，其中所述干涉式光学组件包括一像素，所述光吸收性区域为一与所述像素交界的区域。
30、如权利要求28所述的方法，其中所述制作包括在所述衬底上沉积一第一反光层、在所述第一反光层上沉积一非光吸收性介电层、及在所述非光吸收性介电层上沉积一第二反光层，其中所述第一或第二反光层中的一个或多个为导电性。
31、如权利要求30所述的方法，其中所述第一及第二反光层包含金属材料。
32、如权利要求30所述的方法，其中所述非光吸收性介电层包含一氧化物层。
33、如权利要求28所述的方法，其中所述光吸收性光罩包括一个或多个干涉式元件。
34、一种通过如权利要求28所述的方法形成的光学装置。
35、一种光学装置，其包括：
用于支撑一光学装置的构件；
用于以干涉方式调制光的构件，所述调制构件布置于所述支撑构件上，所述调制构件具有一随一施加至所述调制构件的电压而变化的光学特性；及
用于吸收光的构件，所述吸收构件布置于所述支撑构件上并与所述调制构件相间隔，所述吸收构件电耦接至所述调制构件以为将电压施加至所述调制构件提供一个或多个电路径。
36、如权利要求35所述的光学装置，其中所述支撑构件包括一衬底。
37、如权利要求35所述的光学装置，其中所述调制构件包括一干涉式调制器。
38、如权利要求35所述的光学装置，其中所述吸收构件包括一导电光罩。
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| US11/119,432 | 2005-04-29 | ||
| US11/119,432 US7420725B2 (en) | 2004-09-27 | 2005-04-29 | Device having a conductive light absorbing mask and method for fabricating same |
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| CN1755492B CN1755492B (zh) | 2010-08-11 |
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| EP (2) | EP2426541A3 (zh) |
| JP (1) | JP4414387B2 (zh) |
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| CN (1) | CN1755492B (zh) |
| AT (1) | ATE554417T1 (zh) |
| AU (1) | AU2005205782A1 (zh) |
| BR (1) | BRPI0503895A (zh) |
| CA (1) | CA2519983A1 (zh) |
| ES (1) | ES2383996T3 (zh) |
| MY (1) | MY140270A (zh) |
| RU (1) | RU2389051C2 (zh) |
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| TW (3) | TWI503574B (zh) |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101755232A (zh) * | 2007-07-25 | 2010-06-23 | 高通Mems科技公司 | 微机电系统显示器装置及其制造方法 |
| CN105612439A (zh) * | 2013-08-20 | 2016-05-25 | 英特尔公司 | 一种包含mems装置的显示设备 |
| CN105612439B (zh) * | 2013-08-20 | 2019-06-18 | 英特尔公司 | 一种包含mems装置的显示设备 |
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