CN1725438A - 硅和硅锗量子点阵列的制备方法 - Google Patents
硅和硅锗量子点阵列的制备方法 Download PDFInfo
- Publication number
- CN1725438A CN1725438A CNA2005100117961A CN200510011796A CN1725438A CN 1725438 A CN1725438 A CN 1725438A CN A2005100117961 A CNA2005100117961 A CN A2005100117961A CN 200510011796 A CN200510011796 A CN 200510011796A CN 1725438 A CN1725438 A CN 1725438A
- Authority
- CN
- China
- Prior art keywords
- silicon
- silicon chip
- film
- quantum dot
- preparation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 59
- 239000010703 silicon Substances 0.000 title claims abstract description 59
- 229910000577 Silicon-germanium Inorganic materials 0.000 title claims abstract description 29
- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 title claims description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 58
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 40
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 11
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims abstract description 8
- 241000252506 Characiformes Species 0.000 claims abstract description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000002096 quantum dot Substances 0.000 claims description 36
- 239000004793 Polystyrene Substances 0.000 claims description 24
- 229920002223 polystyrene Polymers 0.000 claims description 23
- 238000001704 evaporation Methods 0.000 claims description 12
- 230000008020 evaporation Effects 0.000 claims description 12
- 238000009413 insulation Methods 0.000 claims description 11
- 238000007738 vacuum evaporation Methods 0.000 claims description 11
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 3
- MVFCKEFYUDZOCX-UHFFFAOYSA-N iron(2+);dinitrate Chemical compound [Fe+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MVFCKEFYUDZOCX-UHFFFAOYSA-N 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- VCJMYUPGQJHHFU-UHFFFAOYSA-N iron(3+);trinitrate Chemical compound [Fe+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O VCJMYUPGQJHHFU-UHFFFAOYSA-N 0.000 abstract description 34
- 238000004140 cleaning Methods 0.000 abstract 2
- 238000000151 deposition Methods 0.000 abstract 1
- 238000001035 drying Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000007747 plating Methods 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 16
- 239000011259 mixed solution Substances 0.000 description 8
- 238000012545 processing Methods 0.000 description 8
- 238000005260 corrosion Methods 0.000 description 7
- 230000007797 corrosion Effects 0.000 description 7
- 239000011324 bead Substances 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 238000003491 array Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000609 electron-beam lithography Methods 0.000 description 2
- 238000000025 interference lithography Methods 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- 238000013475 authorization Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000004807 localization Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002102 nanobead Substances 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 238000000054 nanosphere lithography Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000002216 synchrotron radiation X-ray diffraction Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Images
Landscapes
- Weting (AREA)
- Silicon Compounds (AREA)
Abstract
硅和硅锗量子点阵列的制备方法,属于纳米材料制备技术领域。所述方法将硅片或沉积有硅锗薄膜的硅片依次经过丙酮振荡清洗、酒精振荡清洗、Piranha溶液和RCA溶液处理;然后将质量百分比浓度范围为0.01%-0.9%的聚苯乙烯小球溶液用微量可调移液管滴到步骤1清洗干净的硅片或沉积有硅锗薄膜的硅片表面,置于空气中自然晾干;再将排好聚苯乙烯小球阵列的硅片或沉积有硅锗薄膜的硅片在90℃-110℃保温1-6min,用真空蒸镀仪往基底上沉积25-100nm厚的Ag膜;将沉积好Ag膜的样品浸入氢氟酸和硝酸铁腐蚀液中处理。由于本制备方法简单,不需要复杂设备就能制备出大面积有序排布的硅量子点阵列和硅锗量子点阵列,适宜于规模化工业生产。
Description
技术领域
本发明涉及硅和硅锗量子点阵列的制备方法,尤其是涉及大面积有序排布的硅和硅锗量子点阵列的制备方法,属于纳米材料制备与应用技术领域。
背景技术
由于光电器件和传统电子器件的集成有望解决超大规模集成电路在高密度连接以及带宽方面所受的限制,获得高效率的硅或硅基材料发光性能一直是研究的热点。根据理论计算和已有文献报道,硅和硅锗量子点阵列的准零维盘(点)结构能够使电子空穴对局域化,从而减小非辐射复合几率,增大发光效率。因此,硅和硅锗量子点阵列的制备研究受到了极大的关注。目前主要有以下几种硅和硅锗量子点阵列的制备方法:电子束光刻和反应离子刻蚀(Electron-beam lithography and reactive ion etching)[参见W.X.Ni,J.Birch,Y.S.Tang,K.B.Joelsson,et al.Lattice distortion in dry-etched Si/SiGe quantum dot array studied by 2D reciprocalspace mapping using synchrotron X-ray diffraction,Thin Solid Films 294,300(1997)],超高真空沉积法(Ultra-high-vacuum deposition)[参见A.A.Saranin,A.V.Zotov,V.G.Kotlyar,O.A.Utas,etal.Formation of Si nanodot arrays on the oxidized Si(100)surface,Applied Surface Science 243,199(2005)],超高真空化学气相沉积法(UHV chemical vapor deposition)[参见Wen-Hao Chang,Wen-Yen Chen,An-Tai Chou,Tzu-Min Hsu,et al.Effects of spacer thickness on optical propertiesof stacked Ge/Si quantum dots grown by chemical vapor deposition,Journal of Applied Physics 93,4999(2003)],全息光刻和离子刻蚀(Holographic lithography and ion etching)[参见I.L.Drichko,A.M.Diakonov,V.I.Kozub,I.Yu.Smirnov,et al.AC-hopping conductance of self-organized Ge/Siquantum dot arrays,Physica E 26,450(2005)]等。这些方法通常需要相当苛刻的条件和一些复杂的设备,因此生产成本较高。此外,这些方法很难制备出大面积规则排布的量子点阵列,量子点的周期性和有序性也都不高。
我们将纳米小球刻蚀技术[参见:Alyson V.Whitney,Benjamin D.Myers,and Richard P.Van Duyne,Sub-100nm triangular nanopores fabricated with the reactive ion etching variant ofnanosphere lithography and angle-resolved nanosphere lithography,Nano Letters 4,1507(2004)]和彭奎庆等人发明的硅催化腐蚀技术[参见:中国专利申请号02104179.2,公开号CN1382626A,公开日期2002.12.4,授权日期2004年5月19日]结合起来,在国际上第一次制备出大面积有序排布的硅和硅锗量子点阵列,量子点的直径可以小到30nm。
发明内容
本发明的目的在于提供一种大面积有序排布的硅和硅锗量子点阵列的制备方法。本发明提出的硅和硅锗量子点阵列的制备方法,其特征在于:所述方法依次按如下步骤进行:
(1)将硅片或沉积有硅锗薄膜的硅片依次经过丙酮振荡清洗、酒精振荡清洗、Piranha溶液和RCA溶液处理,表面显示良好的亲水性;
(2)将质量百分比浓度范围为0.01%-0.9%的聚苯乙烯小球溶液用微量可调移液管滴到步骤1清洗干净的硅片或沉积有硅锗薄膜的硅片表面,置于空气中自然晾干;
(3)蒸镀银之前,将排好聚苯乙烯小球阵列的硅片或沉积有硅锗薄膜的硅片在90℃-110℃保温1-6min,然后用真空蒸镀仪往基底上沉积25-100nm厚的Ag膜;
(4)将沉积好Ag膜的样品浸入Fe(NO3)3+HF+H2O或H2O2+HF+H2O腐蚀液中处理10-600s。
在上述硅和硅锗量子点阵列的制备方法中,所述Piranha溶液为浓H2SO4∶H2O2=4∶1,V/V,沸腾1小时。
在上述硅和硅锗量子点阵列的制备方法中,所述RCA溶液为NH3·H2O∶H2O2∶H2O=1∶1∶5,V/V,80℃1小时。
在上述硅和硅锗量子点阵列的制备方法中,所述步骤4氢氟酸浓度范围为1.15-6.9mol/L,硝酸铁浓度范围为0.0675-0.27mol/L。
在本发明中,大面积规则排布的PS小球阵列主要为之后的化学腐蚀提供模板。蒸镀在小球缝隙间的Ag颗粒在腐蚀过程中起到催化的作用,与Ag颗粒接触的区域首先发生腐蚀,形成纳米量级的腐蚀孔。随着反应的进行,腐蚀孔横向扩展至相互交错成网络状的腐蚀沟槽,而与小球底部接触的区域则在腐蚀过程中被保护起来,最终形成硅或硅锗量子点阵列。由于本制备方法条件简单,不需要高温,不需要复杂设备,并能够成功制备出大面积有序排布的硅量子点阵列和硅锗量子点阵列,在规模化工业生产中具有良好的应用前景。
附图说明
图1A是经过腐蚀处理得到的硅量子点阵列的SEM形貌,图1B是经过腐蚀处理得到的硅锗量子点阵列的SEM形貌。
具体实施方式
下面结合实施例对本发明做进一步说明:
本发明结合纳米小球刻蚀技术和硅的催化腐蚀技术在经过清洗的硅片或沉积有硅锗薄膜的硅片表面制备出大面积规则排列的硅和硅锗量子点阵列。其主要制备步骤如下:
(1)硅片或沉积有硅锗薄膜的硅片依次经过丙酮振荡清洗(室温10分钟)、酒精振荡清洗(室温10分钟)、Piranha溶液(浓H2SO4∶H2O2=4∶1,V/V,沸腾1小时)和RCA溶液(NH3·H2O∶H2O2∶H2O=1∶1∶5,V/V,80℃1小时)处理后,表面显示良好的亲水性。根据基底表面积的大小,将浓度范围在0.01%-0.9%(质量百分比浓度)的聚苯乙烯(PS)小球溶液用微量可调移液管滴到清洗干净的硅片或沉积有硅锗薄膜的硅片表面,置于空气中自然晾干。
(2)蒸镀银之前,将排好PS小球阵列的硅片或沉积有硅锗薄膜的硅片在90℃-110℃保温1-6min以增强小球和基底之间的结合,然后用真空蒸镀仪往基底上沉积25-100nm厚的Ag膜。
(3)将沉积好Ag膜的样品浸入Fe(NO3)3+HF+H2O或H2O2+HF+H2O腐蚀液中处理10-600s。氢氟酸浓度范围为1.15-6.9mol/L,硝酸铁浓度范围为0.0675-0.27mol/L。
(4)最后,为了除掉样品表面的银颗粒和PS小球,以80%的功率超声振荡一个小时。
实施例1
根据基底表面积,将浓度0.01%的聚苯乙烯小球溶液滴到清洗干净的硅片表面,晾干后在90℃保温6min。然后在排好PS小球阵列的硅片表面用真空蒸镀仪蒸镀25nm(±3nm)厚的Ag膜,再将沉积有银膜的样品浸入含有氢氟酸和硝酸铁混合溶液的密闭容器釜中(氢氟酸和硝酸铁的浓度分别为1.15mol/L和0.0675mol/L)处理10min,即可获得大面积有序排布的硅量子点阵列。
实施例2
根据基底表面积,将浓度0.01%的聚苯乙烯小球溶液滴到清洗干净的硅片表面,晾干后在90℃保温6min。然后在排好PS小球阵列的硅片表面用真空蒸镀仪蒸镀50nm(±5nm)厚的Ag膜,再将沉积有银膜的样品浸入含有氢氟酸和硝酸铁混合溶液的密闭容器釜中(氢氟酸和硝酸铁的浓度分别为2.3mol/L和0.0675mol/L)处理6min,即可获得大面积有序排布的硅量子点阵列。
实施例3
根据基底表面积,将浓度0.1%的聚苯乙烯小球溶液滴到清洗干净的硅片表面,晾干后在100℃保温5min。然后在排好PS小球阵列的硅片表面用真空蒸镀仪蒸镀100nm(±10nm)厚的Ag膜,再将沉积有银膜的样品浸入含有氢氟酸和硝酸铁混合溶液的密闭容器釜中(氢氟酸和硝酸铁的浓度分别为4.6mol/L和0.135mol/L)处理3min,即可获得大面积有序排布的硅量子点阵列。
实施例4
根据基底表面积,将浓度0.1%的聚苯乙烯小球溶液滴到清洗干净的硅片表面,晾干后在100℃保温5min。然后在排好PS小球阵列的硅片表面用真空蒸镀仪蒸镀50nm(±5nm)厚的Ag膜,再将沉积有银膜的样品浸入含有氢氟酸和硝酸铁混合溶液的密闭容器釜中(氢氟酸和硝酸铁的浓度分别为6.9mol/L和0.27mol/L)处理10s,即可获得大面积有序排布的硅量子点阵列。
实施例5
根据基底表面积,将浓度0.5%的聚苯乙烯小球溶液滴到清洗干净的硅锗薄膜表面,晾干后在100℃保温3min。然后在排好PS小球阵列的硅锗薄膜表面用真空蒸镀仪蒸镀25nm(±3nm)厚的Ag膜,再将沉积有银膜的样品浸入含有氢氟酸和硝酸铁混合溶液的密闭容器釜中(氢氟酸和硝酸铁的浓度分别为1.15mol/L和0.0675mol/L)处理10min,即可获得大面积有序排布的硅锗量子点阵列。
实施例6
根据基底表面积,将浓度0.5%的聚苯乙烯小球溶液滴到清洗干净的硅锗薄膜表面,晾干后在100℃保温3min。然后在排好PS小球阵列的硅锗薄膜表面用真空蒸镀仪蒸镀50nm(±5nm)厚的Ag膜,再将沉积有银膜的样品浸入含有氢氟酸和硝酸铁混合溶液的密闭容器釜中(氢氟酸和硝酸铁的浓度分别为2.3mol/L和0.0675mol/L)处理6min,即可获得大面积有序排布的硅锗量子点阵列。
实施例7
根据基底表面积,将浓度0.9%的聚苯乙烯小球溶液滴到清洗干净的硅锗薄膜表面,晾干后在110℃保温1min。然后在排好PS小球阵列的硅锗薄膜表面用真空蒸镀仪蒸镀100nm(±10nm)厚的Ag膜,再将沉积有银膜的样品浸入含有氢氟酸和硝酸铁混合溶液的密闭容器釜中(氢氟酸和硝酸铁的浓度分别为4.6mol/L和0.135mol/L)处理3min,即可获得大面积有序排布的硅锗量子点阵列。
实施例8
根据基底表面积,将浓度0.9%的聚苯乙烯小球溶液滴到清洗干净的硅锗薄膜表面,晾干后在110℃保温1min。然后在排好PS小球阵列的硅锗薄膜表面用真空蒸镀仪蒸镀50nm(±5nm)厚的Ag膜,再将沉积有银膜的样品浸入含有氢氟酸和硝酸铁混合溶液的密闭容器釜中(氢氟酸和硝酸铁的浓度分别为6.9mol/L和0.27mol/L)处理10s,即可获得大面积有序排布的硅锗量子点阵列。
Claims (4)
1、硅和硅锗量子点阵列的制备方法,其特征在于:所述方法依次按如下步骤进行:
(1)硅片或沉积有硅锗薄膜的硅片依次经过丙酮振荡清洗、酒精振荡清洗、Piranha溶液和RCA溶液处理,表面显示良好的亲水性;
(2)将质量百分比浓度范围为0.01%-0.9%的聚苯乙烯小球溶液用微量可调移液管滴到步骤1清洗干净的硅片或沉积有硅锗薄膜的硅片表面,置于空气中自然晾干;
(3)蒸镀银之前,将排好聚苯乙烯小球阵列的硅片或沉积有硅锗薄膜的硅片在90℃-110℃保温1-6min,然后用真空蒸镀仪往基底上沉积25-100nm厚的Ag膜;
(4)将沉积好Ag膜的样品浸入Fe(NO3)3+HF+H2O或H2O2+HF+H2O腐蚀液中处理10-600s。
2、根据权利要求1所述的硅和硅锗量子点阵列的制备方法,其特征在于:所述Piranha溶液为浓H2SO4∶H2O2=4∶1,V/V,沸腾1小时。
3、根据权利要求1所述的硅和硅锗量子点阵列的制备方法,其特征在于:所述RCA溶液为NH3·H2O∶H2O2∶H2O=1∶1∶5,V/V,80℃1小时。
4、根据权利要求1所述的硅和硅锗量子点阵列的制备方法,其特征在于:所述步骤4氢氟酸浓度范围为1.15-6.9mol/L,硝酸铁浓度范围为0.0675-0.27mol/L。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2005100117961A CN1322548C (zh) | 2005-05-27 | 2005-05-27 | 硅和硅锗量子点阵列的制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2005100117961A CN1322548C (zh) | 2005-05-27 | 2005-05-27 | 硅和硅锗量子点阵列的制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1725438A true CN1725438A (zh) | 2006-01-25 |
CN1322548C CN1322548C (zh) | 2007-06-20 |
Family
ID=35924792
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005100117961A Expired - Fee Related CN1322548C (zh) | 2005-05-27 | 2005-05-27 | 硅和硅锗量子点阵列的制备方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN1322548C (zh) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102064245A (zh) * | 2010-11-12 | 2011-05-18 | 西安神光安瑞光电科技有限公司 | 发光二极管制造方法 |
CN102157621A (zh) * | 2011-03-03 | 2011-08-17 | 郑州大学 | 一种方形硅纳米孔洞及其制备方法 |
CN102543107A (zh) * | 2010-12-07 | 2012-07-04 | 吉林师范大学 | 一种具有垂直磁各向异性纳米点阵列的制备方法 |
CN105068312A (zh) * | 2015-08-06 | 2015-11-18 | 青岛海信电器股份有限公司 | 光转换膜及其制备方法、液晶显示模组 |
CN102148429B (zh) * | 2010-02-06 | 2016-03-30 | 清华大学 | 纳米光学天线阵列的制造方法 |
CN108970612A (zh) * | 2018-06-26 | 2018-12-11 | 西安理工大学 | 一种制备Ag负载ZnO纳米棒阵列的方法 |
CN109585503A (zh) * | 2018-10-08 | 2019-04-05 | 惠科股份有限公司 | 显示面板及其制作方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5705321A (en) * | 1993-09-30 | 1998-01-06 | The University Of New Mexico | Method for manufacture of quantum sized periodic structures in Si materials |
JPH09135017A (ja) * | 1995-09-08 | 1997-05-20 | Sony Corp | 量子デバイスの製造方法 |
CN1150128C (zh) * | 2002-03-15 | 2004-05-19 | 清华大学 | 一种合成纳米硅线阵列的方法 |
CN100347082C (zh) * | 2003-05-19 | 2007-11-07 | 清华大学 | 大面积p-n结纳米硅线阵列及其制备方法 |
-
2005
- 2005-05-27 CN CNB2005100117961A patent/CN1322548C/zh not_active Expired - Fee Related
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102148429B (zh) * | 2010-02-06 | 2016-03-30 | 清华大学 | 纳米光学天线阵列的制造方法 |
CN102064245A (zh) * | 2010-11-12 | 2011-05-18 | 西安神光安瑞光电科技有限公司 | 发光二极管制造方法 |
CN102543107A (zh) * | 2010-12-07 | 2012-07-04 | 吉林师范大学 | 一种具有垂直磁各向异性纳米点阵列的制备方法 |
CN102157621A (zh) * | 2011-03-03 | 2011-08-17 | 郑州大学 | 一种方形硅纳米孔洞及其制备方法 |
CN102157621B (zh) * | 2011-03-03 | 2013-03-13 | 郑州大学 | 一种方形硅纳米孔洞及其制备方法 |
US10101520B2 (en) | 2015-08-06 | 2018-10-16 | Hisense Electric Co., Ltd. | Light conversion film and preparation method thereof, and liquid crystal display device |
CN105068312A (zh) * | 2015-08-06 | 2015-11-18 | 青岛海信电器股份有限公司 | 光转换膜及其制备方法、液晶显示模组 |
CN108970612A (zh) * | 2018-06-26 | 2018-12-11 | 西安理工大学 | 一种制备Ag负载ZnO纳米棒阵列的方法 |
CN108970612B (zh) * | 2018-06-26 | 2021-01-15 | 西安理工大学 | 一种制备Ag负载ZnO纳米棒阵列的方法 |
CN109585503A (zh) * | 2018-10-08 | 2019-04-05 | 惠科股份有限公司 | 显示面板及其制作方法 |
WO2020093309A1 (zh) * | 2018-10-08 | 2020-05-14 | 惠科股份有限公司 | 一种显示面板及其制作方法 |
CN109585503B (zh) * | 2018-10-08 | 2021-04-02 | 惠科股份有限公司 | 显示面板及其制作方法 |
US11127911B2 (en) | 2018-10-08 | 2021-09-21 | HKC Corporation Limited | Display panel and method of manufacturing thereof |
Also Published As
Publication number | Publication date |
---|---|
CN1322548C (zh) | 2007-06-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1725438A (zh) | 硅和硅锗量子点阵列的制备方法 | |
US20030001091A1 (en) | Conductive probe for scanning microscope and machining method using the same | |
Jiang et al. | Growing monodispersed PbS nanoparticles on self-assembled monolayers of 11-mercaptoundecanoic acid on Au (111) substrate | |
CN1599939A (zh) | 微观结构 | |
Ronoh et al. | Comprehensive characterization of different metallic thin films on highly oriented pyrolytic graphite substrate | |
Craighead et al. | Ultra‐small metal particle arrays produced by high resolution electron‐beam lithography | |
CN1920088A (zh) | 一种金属氧化物纳米反阵列薄膜的制备方法 | |
Masuda et al. | Site-selective deposition of In2O3 using a self-assembled monolayer | |
Baer et al. | Challenges in applying surface analysis methods to nanoparticles and nanostructured materials | |
CN100345249C (zh) | 一种制作硅纳米线二极管结构场发射器件的方法 | |
Colaianni et al. | Laser desorption ionization-mass spectrometry detection of amino acids and peptides promoted by gold nanowires | |
CN1966398A (zh) | 一种单质微-纳半导体方块及其制备方法和应用 | |
McIntyre et al. | XPS studies of octadecylphosphonic acid (OPA) monolayer interactions with some metal and mineral surfaces | |
Mandal et al. | Electrostatic entrapment of chloroaurate ions in patterned lipid films and the in situ formation of gold nanoparticles | |
Černiukė et al. | Formation of metaloorganic multilayer structures by Langmuir-Blodgett technique | |
Deshpande et al. | Field emission from oriented tin oxide rods | |
Chen et al. | Enhancement of seeding and electroless Cu plating on tan barrier layers: the role of plasma functionalized self-assembled monolayers | |
Moyen et al. | Novel anodic aluminum oxide‐based nanofabrication: applications in physics and biology | |
Yasseri et al. | Electroless deposition of Au nanocrystals on Si (111) surfaces as catalysts for epitaxial growth of Si nanowires | |
JP3284242B2 (ja) | 有機薄膜の微細パターンの作製方法 | |
US20230349047A1 (en) | Nanowire-equipped film and nanowire manufacturing method | |
CN1680189A (zh) | 金属有机配合物一维微纳米结构材料的直径细化方法 | |
JP3284241B2 (ja) | 有機薄膜の製造方法 | |
Costelle | Tuning the interfacial properties of supported metal nanoclusters | |
CN100370579C (zh) | 量子点形成方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20070620 Termination date: 20200527 |
|
CF01 | Termination of patent right due to non-payment of annual fee |