CN1687802A - Linear magnetic field sensor and its mfg. method - Google Patents
Linear magnetic field sensor and its mfg. method Download PDFInfo
- Publication number
- CN1687802A CN1687802A CN200510072052.0A CN200510072052A CN1687802A CN 1687802 A CN1687802 A CN 1687802A CN 200510072052 A CN200510072052 A CN 200510072052A CN 1687802 A CN1687802 A CN 1687802A
- Authority
- CN
- China
- Prior art keywords
- spin valve
- valve elements
- magnetic field
- layer
- field sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 65
- 238000000034 method Methods 0.000 title claims abstract description 17
- 238000000151 deposition Methods 0.000 claims abstract description 9
- 230000005294 ferromagnetic effect Effects 0.000 claims description 14
- 230000008021 deposition Effects 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 238000002360 preparation method Methods 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 230000000873 masking effect Effects 0.000 abstract 1
- 238000009987 spinning Methods 0.000 abstract 1
- 230000008878 coupling Effects 0.000 description 6
- 238000010168 coupling process Methods 0.000 description 6
- 238000005859 coupling reaction Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000005415 magnetization Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 230000005290 antiferromagnetic effect Effects 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000008447 perception Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 230000005355 Hall effect Effects 0.000 description 1
- 230000001174 ascending effect Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Images
Landscapes
- Measuring Magnetic Variables (AREA)
- Hall/Mr Elements (AREA)
Abstract
The invention offers a kind of tunnel junction linear magnetic sensor and its product method: while depositing non-magnetic layer change mask in place inside main sputter cavity. That is masking the sputter of non-magnetic in 1,3 spin valve or 2,4 spin valve which will make the non-magnetic thinner or thicker. After that take away the mask and sputter other park of the spin valve. The invention can make the spinning layer of the two of four spin valve component inside bridge-style magnetic sensor reverse from the other two. That means, it doesn't need to set current bias method and permanent bias method. It can simplify preparation processing and efficiently increase the compatibility of the production.
Description
Technical field
The present invention relates to a kind of senser element and preparation method thereof, relate in particular to a kind of digital magnetic field sensor that has tunnel junction resistance element or giant magnetoresistance element and preparation method thereof.
Background technology
One of them technical barrier that must overcome is how to make output signal become linear dependence with external magnetic field in linear magnetic sensor, present most popular linear magnetic field sensor is the Hall magnetic field sensor, promptly based on Hall effect, the intrinsic characteristic of its material property is exactly that output signal and external magnetic field are linear, but the Hall magnetic field sensor is very little to the output signal of low-intensity magnetic field, so generally be used for the big magnetic field of perception 100 to 1000 oersted (Oe) scopes, another kind of MR magnetic field sensor is based on anisotropic magneto-resistive effect (AMR), caused the sensitive element changes in resistance by the external magnetic field of sensing, cause the variation of corresponding curtage.The bridge-type magnetic sensor of being made by AMR is as the magnetic field below the about 50Oe of perception.
In magnetoresistance effect, observed the more significant magnetic resistance of another kind, tunnel junction magneto-resistor (TMR) and giant magnetoresistance (GMR).Be characterized in having at least two ferromagnetic metal layers to be separated by a non-ferromagnetic metal level or oxide layer.TMG and GMR multilayer film have multiple structure, its physics root all is to originate from the electronic spin dependent scattering, since giant magnetoresistance and tunnel junction magneto-resistor phenomenon are found, because its high sensitivity to low-intensity magnetic field, be subjected to the extensive attention of business circles, except the important application aspect computer magnetic head and the MARM (non-volatile magnetic storage), also be penetrated into gradually some to other among the application than low-intensity magnetic field induction, as position transducer, galvanometer, compass or the like.
In giant magnetoresistance and tunnel junction magneto-resistor low-intensity magnetic field being responded to the sensitiveest structure is exactly so-called Spin Valve (spin valve), its design feature is that two very little ferromagnetic layers that are not coupled or are coupled are separated by a non-magnetic metal layer or oxide layer, one of them ferromagnetic layer is lived by another inverse ferric magnetosphere pinning, be pinning layer, another ferromagnetic layer can freely rotate with external magnetic field, is free layer.When the effect of the magnetization direction outside magnetic field of free layer down with the magnetization direction of pinning layer by parallel during to antiparallel, the size of resistance is with regard to ascending variation.Just can know the size of external magnetic field by the resistance variations of measuring the Spin Valve multilayer film.So just cause a Spin Valve magnetic sensor.But because the non-linear relation of its signal domain output external magnetic field, so can not be directly used in the making of linear transducer, in order to make it have linear relationship with external magnetic field, the general structure that adopts common bridge-type AMR magnetic sensor, the United States Patent (USP) of IBM has shown similar a kind of basic Spin Valve magnetic sensor for No. 5206590.One of several at least ferromagnetic layers are cobalt or cobalt-base alloy in a kind of sensor that No. the 5159513rd, the United States Patent (USP) of IBM shows, and free layer and pinning layer are vertical mutually when zero externally-applied magnetic field.This is that wherein the magnetization of pinning layer is parallel to signal field by the Spin Valve magnetic sensor of line style response and wide dynamic range.The United States Patent (USP) 5341261 of IBM has proposed a kind of Spin Valve magnetic sensor, and itself and nonmagnetic layer adjacent have a cobalt thin layer to increase magneto-resistor.People such as Heim are at " Spin Valve magnetic Design of Sensor and manufacturing " (IEEETransactions on Magnetics 30 316-321 1994) literary composition.Daughton etc. are at " being applied to low GMR material " (IEEE Transactions on Magnetics, 29 2705-2710) suggestion uses the GMR element to make magnetic sensor in bridge circuit in, and the patent of this design proposal is finally obtained by IBM Corporation.It has utilized being better than the AMR sensor of spin-valve sensor and has improved the performance of magnetic sensor.The sensor that adopts the GMR element to make has improved 5 times than the sensitivity of AMR member sensor device.However, in order to make output signal and external magnetic field linear, the direction of two its pinning layers in 4 spin valve elements in the bridge-type magnetic sensor of design such as Daughton must be opposite with the top bundle layer direction of two other spin valve elements, in order to reach this purpose, the employing that has on manufacture craft is provided with electric current magnetic bias method, the employing that has is provided with permanent magnet magnetic bias method, the employing secondary sedimentation that also has, these preparation technologies are comparatively complicated, increased the manufacture difficulty of sensor, main is that consistency of product is difficult to be guaranteed.
Summary of the invention
In order to overcome this difficulty, the invention provides a kind of linear magnetic field sensor method for making, the direction that can realize two its pinning layers in 4 spin valve elements in the bridge-type magnetic sensor in primary depositing is opposite with the pinning layer direction of two other spin valve elements, realizes the linear response of sensor to external magnetic field.
Further, the present invention also provides a kind of linear magnetic field sensor that adopts this method for making to obtain.
For achieving the above object, a kind of linear magnetic field sensor method for making provided by the invention: original position is changed mask in main sputtering chamber when the deposition nonmagnetic layer, promptly when deposition, utilize mask to block the sputter of nonmagnetic layer on the 1st, 3 spin valve elements or the 2nd, 4 spin valve elements, cause the thinner thickness of nonmagnetic layer on the 1st, 3 spin valve elements or the 2nd, 4 spin valve elements or thicker, and then take away mask, remaining spin valve elements material in the sputter.
Further, described spin valve elements is tunnel junction element or GMR element.
A kind of linear magnetic field sensor provided by the invention, comprise: sheet base and formed 4 spin valve elements on described base, wherein, 1st, 3 spin valve elements structures are just the same, 2nd, 4 spin valve elements are just the same, 1st, 3 spin valve elements are than the thinner thickness of the nonmagnetic layer of the 2nd, 4 spin valve elements or thicker, and the pinning layer of described spin valve elements adopts synthetic pinning form, and described synthetic pinning form is inverse ferric magnetosphere/ferromagnetic layer/nonmagnetic layer/ferromagnetic layer.
Further, described spin valve elements is tunnel junction element or GMR element.
The invention has the beneficial effects as follows: the direction that can realize two its pinning layers in 4 spin valve elements in the bridge-type magnetic sensor in primary depositing is opposite with the top bundle layer direction of two other spin valve elements, realize the linear response of sensor to external magnetic field, promptly do not need to be provided with electric current magnetic bias method, permanent magnet magnetic bias method also need not be set, simplify preparation technology greatly, can improve consistency of product effectively.
Description of drawings
Fig. 1 is the sensor synoptic diagram with different-thickness nonmagnetic layer.
Fig. 2 mask method preparation technology synoptic diagram.
Specific embodiment
As shown in Figure 2, tie lines magnetic field sensor method for making: original position is changed mask in main sputtering chamber when the deposition nonmagnetic layer, promptly when deposition, utilize mask to block the sputter of nonmagnetic layer on the 1st, 3 tunnel junctions 1,3, cause the thinner thickness of nonmagnetic layer on the 1st, 3 tunnel junctions 1,3, and then take away mask, remaining tunnel junction material in the sputter.
As shown in Figure 1, adopt the prepared sensor of said method to comprise: formed 4 tunnel junctions on sheet base and the described base with different-thickness nonmagnetic layer, wherein the 1st, 3 tunnel junctions 1,3 are just the same, 2nd, 4 tunnel junctions 2,4 are just the same, 1st, the thinner thickness of the nonmagnetic layer of 3 tunnel junctions, 1,3 to the 2,4 tunnel junctions 2,4, the pinning layer of tunnel junction 1,2,3,4 adopts synthetic pinning form, be inverse ferric magnetosphere/ferromagnetic layer/nonmagnetic layer/ferromagnetic layer, for example: IrMn/Co/Ru/Co.In the layer coupling of material, the phenomenon of Fa Xianing is that some ferromagnetic materials are (as Fe already, Co, Ni) and their some alloys with the nonmagnetic layer of centre (as Cu, Ru, Cr etc.) layer coupling of generation vibration, promptly the variation in thickness along with nonmagnetic layer has the variation of ferromagnetic coupling to antiferromagnetic coupling, we just can make the 1st in top 4 tunnel junctions by changing nonmagnetic layer thickness in the synthetic pinning layer like this, 3 tunnel junctions 1,3 are ferromagnetic coupling, the 2nd, 4 tunnel junctions 2,4 are antiferromagnetic coupling, so just can realize in the bridge type magnetic sensor of forming by these 4 sensors that the direction of two its pinning layers in 4 spin valve elements is opposite with the pinning layer direction of two other spin valve elements, reaches the linear output of sensor with external magnetic field.
The present invention equally also is applicable to giant magnetoresistance (GMR) element.
Claims (4)
1, a kind of linear magnetic field sensor method for making is characterized in that, adopts following steps:
Original position is changed mask in main sputtering chamber when the deposition nonmagnetic layer, promptly when deposition, utilize mask to block the sputter of nonmagnetic layer on the 1st, 3 spin valve elements or the 2nd, 4 spin valve elements, cause the thinner thickness of nonmagnetic layer on the 1st, 3 spin valve elements or the 2nd, 4 spin valve elements or thicker, and then take away mask, remaining spin valve elements material in the sputter.
2, a kind of linear magnetic field sensor method for making according to claim 1 is characterized in that, described spin valve elements is tunnel junction element or GMR element.
3, adopt the prepared a kind of linear magnetic field sensor of a kind of tunnel junction linear magnetic field sensor method for making as claimed in claim 2, it is characterized in that, comprise: the sheet base, and on described base formed 4 spin valve elements, wherein, the 1st, 3 spin valve elements structures are just the same, the 2nd, 4 spin valve elements are just the same, the 1st, 3 spin valve elements are than the 2nd, the thinner thickness of the nonmagnetic layer of 4 spin valve elements or thicker, the pinning layer of described spin valve elements adopts synthetic pinning form, and described synthetic pinning form is inverse ferric magnetosphere/ferromagnetic layer/nonmagnetic layer/ferromagnetic layer.
4, a kind of linear magnetic field sensor according to claim 3 is characterized in that, described spin valve elements is tunnel junction element or GMR element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100720520A CN100442076C (en) | 2005-05-27 | 2005-05-27 | Linear magnetic field sensor and its mfg. method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100720520A CN100442076C (en) | 2005-05-27 | 2005-05-27 | Linear magnetic field sensor and its mfg. method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1687802A true CN1687802A (en) | 2005-10-26 |
| CN100442076C CN100442076C (en) | 2008-12-10 |
Family
ID=35305844
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005100720520A Expired - Fee Related CN100442076C (en) | 2005-05-27 | 2005-05-27 | Linear magnetic field sensor and its mfg. method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100442076C (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007065377A1 (en) * | 2005-12-09 | 2007-06-14 | Institute Of Physics, Chinese Academy Of Sciences | An integrate planar sensor for detecting weak magnetic field on three dimensional directions and a manufacturing method thereof |
| CN101672903B (en) * | 2009-09-23 | 2011-09-14 | 电子科技大学 | Preparation method of magnetic sensor of wheatstone bridge type spin valve |
| CN102298126A (en) * | 2011-01-17 | 2011-12-28 | 江苏多维科技有限公司 | Independent packaged bridge-type magnetic-field sensor |
| CN105954692A (en) * | 2016-04-26 | 2016-09-21 | 中国科学院物理研究所 | Magnetic sensor with improved sensitivity and linearity |
| CN112530835A (en) * | 2019-09-18 | 2021-03-19 | 东京毅力科创株式会社 | Film forming system, magnetization characteristic measuring apparatus, and film forming method |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5159513A (en) * | 1991-02-08 | 1992-10-27 | International Business Machines Corporation | Magnetoresistive sensor based on the spin valve effect |
| US5561368A (en) * | 1994-11-04 | 1996-10-01 | International Business Machines Corporation | Bridge circuit magnetic field sensor having spin valve magnetoresistive elements formed on common substrate |
| CN1294559C (en) * | 2004-10-10 | 2007-01-10 | 中国科学院物理研究所 | Double-barrier tunnel junction senser having effect of resonance tunnel pass |
-
2005
- 2005-05-27 CN CNB2005100720520A patent/CN100442076C/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007065377A1 (en) * | 2005-12-09 | 2007-06-14 | Institute Of Physics, Chinese Academy Of Sciences | An integrate planar sensor for detecting weak magnetic field on three dimensional directions and a manufacturing method thereof |
| CN100593122C (en) * | 2005-12-09 | 2010-03-03 | 中国科学院物理研究所 | 3-D magnetic-field sensor integrated by planes, preparing method and use |
| CN101672903B (en) * | 2009-09-23 | 2011-09-14 | 电子科技大学 | Preparation method of magnetic sensor of wheatstone bridge type spin valve |
| CN102298126A (en) * | 2011-01-17 | 2011-12-28 | 江苏多维科技有限公司 | Independent packaged bridge-type magnetic-field sensor |
| CN102298126B (en) * | 2011-01-17 | 2013-03-13 | 江苏多维科技有限公司 | Independent packaged bridge-type magnetic-field sensor |
| CN105954692A (en) * | 2016-04-26 | 2016-09-21 | 中国科学院物理研究所 | Magnetic sensor with improved sensitivity and linearity |
| CN112530835A (en) * | 2019-09-18 | 2021-03-19 | 东京毅力科创株式会社 | Film forming system, magnetization characteristic measuring apparatus, and film forming method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100442076C (en) | 2008-12-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP3092505B1 (en) | Magnetoresistance element with an improved seed layer to promote an improved response to magnetic fields | |
| JP2846472B2 (en) | Magnetoresistive sensor having synthetic antiferromagnetic magnet and method of manufacturing the same | |
| CN102280574B (en) | Thin film magnetoresistance sensing element, combination of multiple sensing elements, and electronic device coupled with combination | |
| US9207290B2 (en) | Magnetic field sensor for sensing external magnetic field | |
| CN102270736B (en) | Magnetic nano-multilayer film used for magnetic sensor and manufacturing method for magnetic nano-multilayer film | |
| CN106019183B (en) | Magnetic Sensor and magnetic encoder | |
| US5998040A (en) | Multilayer which shows magnetoresistive effect and magnetoresistive element using the same | |
| CN202305777U (en) | Monolithic biaxial bridge-type magnetic field sensor | |
| JPH06181349A (en) | Magnetoresistance effect-type weak magnetic-field sensor | |
| KR100304770B1 (en) | Magnetoresistive effect film and method of manufacture thereof | |
| CN109716548B (en) | Exchange coupling film, and magnetoresistance effect element and magnetic detection device using same | |
| CN101996734B (en) | Linear response giant magnetoresistance effect multilayer film | |
| US20080068007A1 (en) | Magnetic encoder apparatus | |
| CN100442076C (en) | Linear magnetic field sensor and its mfg. method | |
| KR100905737B1 (en) | Spin-valve magnetoresistive element with perpendicular magnetic anisotropy | |
| US6051309A (en) | Magnetoresistance effect film and method for making the same | |
| CN103383441B (en) | A kind of digital spin valve magnetic field sensor and technology of preparing thereof | |
| Chan et al. | Spin valves with Conetic based synthetic ferrimagnet free layer | |
| CN102623018A (en) | Magnetic multi-layer film based on perpendicular-magnetization free layer, and magnetic sensor | |
| Miller et al. | Development of a high precision absolute linear displacement sensor utilizing GMR spin-valves | |
| CN100368820C (en) | Spinning valve type digital magnetic field sensor and fabrication method thereof | |
| CN101894647A (en) | Metal/insulator type nano granular material and thin-film magnetic field sensor | |
| CN103235274B (en) | A kind of sensor based on antiferromagnetic spin flop phenomenon | |
| RU128764U1 (en) | SPIN-VENT MAGNET RESISTANT NANOSTRUCTURE | |
| Djamal et al. | Design and development of magnetic sensors based on giant magnetoresistance (GMR) materials |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| EE01 | Entry into force of recordation of patent licensing contract |
Assignee: Wuxi Nano MEMS, Inc. Assignor: Research Institute of Physics, Chinese Academy of Sciences Contract record no.: 2010320001105 Denomination of invention: Linear magnetic field sensor and its mfg. method Granted publication date: 20081210 License type: Exclusive License Open date: 20051026 Record date: 20100902 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20081210 Termination date: 20170527 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |