CN1633826A - 有机电致发光元件用透明基板及元件 - Google Patents
有机电致发光元件用透明基板及元件 Download PDFInfo
- Publication number
- CN1633826A CN1633826A CNA028176529A CN02817652A CN1633826A CN 1633826 A CN1633826 A CN 1633826A CN A028176529 A CNA028176529 A CN A028176529A CN 02817652 A CN02817652 A CN 02817652A CN 1633826 A CN1633826 A CN 1633826A
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- China
- Prior art keywords
- transparency carrier
- electroluminescent device
- organic electroluminescent
- film
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 239000000758 substrate Substances 0.000 title abstract description 30
- 238000005401 electroluminescence Methods 0.000 title abstract 5
- -1 alkoxide compounds Chemical class 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 17
- 238000000576 coating method Methods 0.000 claims description 12
- 150000004703 alkoxides Chemical class 0.000 claims description 10
- 150000001875 compounds Chemical class 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 239000011248 coating agent Substances 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 229910044991 metal oxide Inorganic materials 0.000 claims description 7
- 150000004706 metal oxides Chemical class 0.000 claims description 7
- 238000001802 infusion Methods 0.000 claims description 5
- 239000003960 organic solvent Substances 0.000 claims description 5
- 238000005245 sintering Methods 0.000 claims description 5
- 229910052726 zirconium Inorganic materials 0.000 claims description 5
- 239000002253 acid Substances 0.000 claims description 4
- 239000003513 alkali Chemical class 0.000 claims description 4
- 239000004411 aluminium Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 238000006068 polycondensation reaction Methods 0.000 claims description 4
- 229910000077 silane Inorganic materials 0.000 claims description 4
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 3
- 239000005361 soda-lime glass Substances 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 230000003287 optical effect Effects 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 39
- 239000010410 layer Substances 0.000 description 35
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 10
- 238000002310 reflectometry Methods 0.000 description 10
- 239000011521 glass Substances 0.000 description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 6
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 239000012530 fluid Substances 0.000 description 5
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 4
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical class CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 239000002585 base Substances 0.000 description 3
- 239000012044 organic layer Substances 0.000 description 3
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 2
- SVTBMSDMJJWYQN-UHFFFAOYSA-N 2-methylpentane-2,4-diol Chemical compound CC(O)CC(C)(C)O SVTBMSDMJJWYQN-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 150000001298 alcohols Chemical class 0.000 description 2
- 238000000149 argon plasma sintering Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 238000003618 dip coating Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- SBRXLTRZCJVAPH-UHFFFAOYSA-N ethyl(trimethoxy)silane Chemical compound CC[Si](OC)(OC)OC SBRXLTRZCJVAPH-UHFFFAOYSA-N 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- BFXIKLCIZHOAAZ-UHFFFAOYSA-N methyltrimethoxysilane Chemical compound CO[Si](C)(OC)OC BFXIKLCIZHOAAZ-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- DENFJSAFJTVPJR-UHFFFAOYSA-N triethoxy(ethyl)silane Chemical compound CCO[Si](CC)(OCC)OCC DENFJSAFJTVPJR-UHFFFAOYSA-N 0.000 description 2
- CPUDPFPXCZDNGI-UHFFFAOYSA-N triethoxy(methyl)silane Chemical compound CCO[Si](C)(OCC)OCC CPUDPFPXCZDNGI-UHFFFAOYSA-N 0.000 description 2
- YUYCVXFAYWRXLS-UHFFFAOYSA-N trimethoxysilane Chemical compound CO[SiH](OC)OC YUYCVXFAYWRXLS-UHFFFAOYSA-N 0.000 description 2
- LZDKZFUFMNSQCJ-UHFFFAOYSA-N 1,2-diethoxyethane Chemical compound CCOCCOCC LZDKZFUFMNSQCJ-UHFFFAOYSA-N 0.000 description 1
- RRQYJINTUHWNHW-UHFFFAOYSA-N 1-ethoxy-2-(2-ethoxyethoxy)ethane Chemical compound CCOCCOCCOCC RRQYJINTUHWNHW-UHFFFAOYSA-N 0.000 description 1
- 125000001637 1-naphthyl group Chemical group [H]C1=C([H])C([H])=C2C(*)=C([H])C([H])=C([H])C2=C1[H] 0.000 description 1
- FYXXVVNKCOSZEL-UHFFFAOYSA-N 1-triethoxysilyloctadecan-1-one Chemical compound CCCCCCCCCCCCCCCCCC(=O)[Si](OCC)(OCC)OCC FYXXVVNKCOSZEL-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- KSCAZPYHLGGNPZ-UHFFFAOYSA-N 3-chloropropyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)CCCCl KSCAZPYHLGGNPZ-UHFFFAOYSA-N 0.000 description 1
- NMUBRRLYMADSGF-UHFFFAOYSA-N 3-triethoxysilylpropan-1-ol Chemical compound CCO[Si](OCC)(OCC)CCCO NMUBRRLYMADSGF-UHFFFAOYSA-N 0.000 description 1
- YATIYDNBFHEOFA-UHFFFAOYSA-N 3-trimethoxysilylpropan-1-ol Chemical compound CO[Si](OC)(OC)CCCO YATIYDNBFHEOFA-UHFFFAOYSA-N 0.000 description 1
- YCPXWRQRBFJBPZ-UHFFFAOYSA-N 5-sulfosalicylic acid Chemical compound OC(=O)C1=CC(S(O)(=O)=O)=CC=C1O YCPXWRQRBFJBPZ-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- DMOWKLAHIRGGSS-UHFFFAOYSA-N C(C)O.C(C)O.[Ba] Chemical compound C(C)O.C(C)O.[Ba] DMOWKLAHIRGGSS-UHFFFAOYSA-N 0.000 description 1
- COXCBJKFBSJRQF-UHFFFAOYSA-N C(CCCCCCCCCCCCCCCCC)(=O)[Si](OC)(OC)OC Chemical compound C(CCCCCCCCCCCCCCCCC)(=O)[Si](OC)(OC)OC COXCBJKFBSJRQF-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 206010047571 Visual impairment Diseases 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- SMZOGRDCAXLAAR-UHFFFAOYSA-N aluminium isopropoxide Chemical compound [Al+3].CC(C)[O-].CC(C)[O-].CC(C)[O-] SMZOGRDCAXLAAR-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 150000001553 barium compounds Chemical class 0.000 description 1
- ZZHNUBIHHLQNHX-UHFFFAOYSA-N butoxysilane Chemical class CCCCO[SiH3] ZZHNUBIHHLQNHX-UHFFFAOYSA-N 0.000 description 1
- XGZGKDQVCBHSGI-UHFFFAOYSA-N butyl(triethoxy)silane Chemical compound CCCC[Si](OCC)(OCC)OCC XGZGKDQVCBHSGI-UHFFFAOYSA-N 0.000 description 1
- SXPLZNMUBFBFIA-UHFFFAOYSA-N butyl(trimethoxy)silane Chemical compound CCCC[Si](OC)(OC)OC SXPLZNMUBFBFIA-UHFFFAOYSA-N 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 229940065285 cadmium compound Drugs 0.000 description 1
- 150000001662 cadmium compounds Chemical class 0.000 description 1
- RSNLUDVKPYKXCF-UHFFFAOYSA-N cadmium ethanol Chemical compound [Cd].CCO.CCO RSNLUDVKPYKXCF-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 210000002858 crystal cell Anatomy 0.000 description 1
- YYLGKUPAFFKGRQ-UHFFFAOYSA-N dimethyldiethoxysilane Chemical compound CCO[Si](C)(C)OCC YYLGKUPAFFKGRQ-UHFFFAOYSA-N 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- FWDBOZPQNFPOLF-UHFFFAOYSA-N ethenyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C=C FWDBOZPQNFPOLF-UHFFFAOYSA-N 0.000 description 1
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 150000002334 glycols Chemical class 0.000 description 1
- VRINOTYEGADLMW-UHFFFAOYSA-N heptyl(trimethoxy)silane Chemical compound CCCCCCC[Si](OC)(OC)OC VRINOTYEGADLMW-UHFFFAOYSA-N 0.000 description 1
- CZWLNMOIEMTDJY-UHFFFAOYSA-N hexyl(trimethoxy)silane Chemical compound CCCCCC[Si](OC)(OC)OC CZWLNMOIEMTDJY-UHFFFAOYSA-N 0.000 description 1
- 229940051250 hexylene glycol Drugs 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 229910052809 inorganic oxide Inorganic materials 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- SJCKRGFTWFGHGZ-UHFFFAOYSA-N magnesium silver Chemical compound [Mg].[Ag] SJCKRGFTWFGHGZ-UHFFFAOYSA-N 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- MSRJTTSHWYDFIU-UHFFFAOYSA-N octyltriethoxysilane Chemical compound CCCCCCCC[Si](OCC)(OCC)OCC MSRJTTSHWYDFIU-UHFFFAOYSA-N 0.000 description 1
- 229960003493 octyltriethoxysilane Drugs 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- HKJYVRJHDIPMQB-UHFFFAOYSA-N propan-1-olate;titanium(4+) Chemical class CCCO[Ti](OCCC)(OCCC)OCCC HKJYVRJHDIPMQB-UHFFFAOYSA-N 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000007761 roller coating Methods 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 125000003698 tetramethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- ZQZCOBSUOFHDEE-UHFFFAOYSA-N tetrapropyl silicate Chemical compound CCCO[Si](OCCC)(OCCC)OCCC ZQZCOBSUOFHDEE-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- JMXKSZRRTHPKDL-UHFFFAOYSA-N titanium ethoxide Chemical compound [Ti+4].CC[O-].CC[O-].CC[O-].CC[O-] JMXKSZRRTHPKDL-UHFFFAOYSA-N 0.000 description 1
- 238000010023 transfer printing Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- MYWQGROTKMBNKN-UHFFFAOYSA-N tributoxyalumane Chemical class [Al+3].CCCC[O-].CCCC[O-].CCCC[O-] MYWQGROTKMBNKN-UHFFFAOYSA-N 0.000 description 1
- ZLGWXNBXAXOQBG-UHFFFAOYSA-N triethoxy(3,3,3-trifluoropropyl)silane Chemical compound CCO[Si](OCC)(OCC)CCC(F)(F)F ZLGWXNBXAXOQBG-UHFFFAOYSA-N 0.000 description 1
- SAWDTKLQESXBDN-UHFFFAOYSA-N triethoxy(heptyl)silane Chemical compound CCCCCCC[Si](OCC)(OCC)OCC SAWDTKLQESXBDN-UHFFFAOYSA-N 0.000 description 1
- WUMSTCDLAYQDNO-UHFFFAOYSA-N triethoxy(hexyl)silane Chemical compound CCCCCC[Si](OCC)(OCC)OCC WUMSTCDLAYQDNO-UHFFFAOYSA-N 0.000 description 1
- FHVAUDREWWXPRW-UHFFFAOYSA-N triethoxy(pentyl)silane Chemical compound CCCCC[Si](OCC)(OCC)OCC FHVAUDREWWXPRW-UHFFFAOYSA-N 0.000 description 1
- JCVQKRGIASEUKR-UHFFFAOYSA-N triethoxy(phenyl)silane Chemical compound CCO[Si](OCC)(OCC)C1=CC=CC=C1 JCVQKRGIASEUKR-UHFFFAOYSA-N 0.000 description 1
- JLGNHOJUQFHYEZ-UHFFFAOYSA-N trimethoxy(3,3,3-trifluoropropyl)silane Chemical compound CO[Si](OC)(OC)CCC(F)(F)F JLGNHOJUQFHYEZ-UHFFFAOYSA-N 0.000 description 1
- HILHCDFHSDUYNX-UHFFFAOYSA-N trimethoxy(pentyl)silane Chemical compound CCCCC[Si](OC)(OC)OC HILHCDFHSDUYNX-UHFFFAOYSA-N 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/321—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]
- H10K85/324—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3] comprising aluminium, e.g. Alq3
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
本发明提供了能够改善有机电致发光元件的光释放率的透明基板,以及通过使用该基板使发光效率有所提高且量产性良好的有机电致发光元件。本发明涉及有机电致发光元件用透明基板及具有该透明基板的有机电致发光元件,该有机电致发光元件用透明基板是有机电致发光元件的透明基板,该基板的特征是,在透明基板的两面设置至少1层具有使对发光层发出的光的反射量减少的折射率及膜厚的光干涉膜。
Description
技术领域
本发明涉及有机电致发光元件用基板及使用了该基板的有机电致发光元件。
背景技术
有机电致发光元件是因近年的平面显示器的需求的提高而倍受瞩目的元件。Tang和Vanslyke提出元件由形成于玻璃基板上的阳极、空穴输送层、电子输送发光层和阴极构成(Appl.Phys.Lett.,51,913,1987)。此外,已知的有用薄膜基板代替玻璃基板实现轻量化和柔性的元件(Semiconductor FPDWorld 2001,6,152),以及采用前述元件的构成中用透明性材料作为阴极、再在其上设置透明性薄膜、从阴极侧发光的顶发光方式的元件(Semicon-ductor FPD World 2001,4,136)等。有机电致发光元件与以往作为平面显示器被广泛使用的液晶元件相比具有一定的优点。
即,由于有机电致发光元件是自发光元件,所以对视角的依赖性较小,耗电量较小,能够形成极薄的元件。但是,用于平面显示器时需要解决的问题还是很多。其中之一是元件的发光寿命短。针对这一问题,现在通过对元件构成要素中的发光层材料的改进实现了1万小时左右的寿命,但要使该元件适用于平面显示器,这还不是令人满意的寿命。如果寿命较短,则在平面显示器长时间显示静止画面时,在点亮像素和非点亮像素间会产生亮度差,出现所谓的残像现象。
与发光寿命有关的因素有很多,众所周知,如果为了提高发光亮度而对元件施加高电压,则会使寿命更短。但是,使用了有机电致发光元件的显示器的发光亮度在施加低电压的状态下不能够满足需要,为了确保日间室外的显示器的目视性,需要对元件施加高电压,提高其发光亮度。这样,有机电致发光元件就陷入要延长寿命就必须减弱发光亮度,要提高目视性就会缩短寿命的困境。
为了解决这一问题,一直以来着力于有机电致发光元件的发光层材料的改良。即,为了以施加低电压实现较高的发光亮度,开发内部能量效率较高的发光层材料。
另一方面,Thompson等认为表示有机电致发光元件的发光效率的外部能率用元件的内部能率和光释放率的乘积表示(Optics Letters 22,6,396,1997)。即,为了提高有机电致发光元件的发光效率,除了使内部能率提高外,还必须使光释放率有所提高。
光释放率是指对应于元件发光从元件的透明基板正面被释放入大气中的光线的比例。即,发光层中的光线被释放入大气中,必须通过数个折射率不同的介质的界面,但按照斯内尔定律,在各界面以其临界角以上的角度入射的光被界面全反射,导入层中而消失,或从层侧面被释放,从元件正面释放的光线就相应地减少了。
按照前述Thompson等的理论,有机电致发光元件的光释放率约为0.175,发光层发出的光的约18%释放到元件外,剩余的约82%被封入元件中而消失或从元件侧面释放。
因此,提高光释放率是很重要的课题,以往进行了各种尝试。揭示了在透明电极和发光层形成晶粒边界、使可见光散射的技术(日本专利特公平3-18320号公报),作为透明基板使用一侧表面粗面化的玻璃基板、使发出的光散射的技术(日本专利特开昭61-156691号公报),在电极和有机层的界面附近设置散射区域的技术(日本专利特开平09-129375号公报)。但是,这些尝试都可能会使所有元件各层的膜厚不均一,导致绝缘破坏及元件发光的不均一性,因此从元件的量产性考虑,不能够满足要求。
另外,揭示了在透明基板和发光层间进行光干涉膜等的防反射处理的技术(日本专利特开平2-56892、特开平3-297090号公报)。但是,这些对于折射率较大的无机电致发光元件有效,但在折射率较小的有机电致发光元件的情况下,不仅是透明基板和发光层侧透明电极的界面,在透明基板和大气界面的全反射也是大问题,因此不能够获得足够的效果。
再进一步言之,上述发明的目的是防止外部光透过透明基板、在元件里面的镜面电极反射、导致对比度等元件的显示品质下降,而从光释放的观点考虑,其折射率、膜厚的设定有很大不同。
因此,有机电致发光元件的光释放率低这一问题依然未得到解决。
本发明就是在上述背景下完成的,其目的是提供能够改善有机电致发光元件的光释放率的透明基板,并提供使用了该基板的发光效率高、且量产性良好的有机电致发光元件。
发明的揭示
本发明提供具有以下特征的有机电致发光元件用透明基板及使用了该基板的有机电致发光元件。
(1)有机电致发光元件用透明基板,它是有机电致发光元件的透明基板,该基板的特征是,在该透明基板的两面设置至少1层具有使对发光层发出的光的反射量减少的折射率及膜厚的光干涉膜。
(2)进一步限定上述(1)记载的有机电致发光元件用透明基板,其中,光干涉膜具有1.1~2.3的折射率和10~25,000nm的膜厚。
(3)进一步限定上述(1)或(2)记载的有机电致发光元件用透明基板,其中,光干涉膜为由高折射率膜和低折射率膜形成的多层膜或具有不同膜厚的多层膜。
(4)进一步限定上述(1)、(2)或(3)记载的有机电致发光元件用透明基板,其中,光干涉膜通过在透明基板上涂布金属氧化物的溶胶-凝胶材料并烧结而获得。
(5)进一步限定上述(4)记载的有机电致发光元件用透明基板,其中,金属氧化物的溶胶-凝胶材料通过在酸性化合物或碱性化合物存在下,在有机溶剂中由金属醇盐的缩聚反应获得。
(6)进一步限定上述(5)记载的有机电致发光元件用透明基板,其中,金属醇盐为烷氧基硅烷或钛、锆、铝或钽的四烷氧基化合物。
(7)进一步限定上述(1)~(6)中的任一项记载的有机电致发光元件用透明基板,其中,光干涉膜由金属氧化物的溶胶-凝胶材料通过浸渍法成膜烧结于透明基板的两面而形成。
(8)进一步限定上述(1)~(7)中的任一项记载的有机电致发光元件用透明基板,其中,透明基板为石英玻璃、钠钙玻璃或有机薄膜。
(9)有机电致发光元件,该元件具有上述(1)~(8)中的任一项记载的有机电致发光元件用透明基板。
附图的简单说明
图1为本发明的透明基板应用于有机电致发光元件的例子的截面图。
图2为表示使用以往的透明基板时从发光层发出的光封闭于内部的情况的截面图。
图3为表示使用本发明的透明基板时从发光层发出的光从基板正面释放的截面图。
符号说明:1为透明基板,2为透明电极,3为具有发光层的有机层,4为电极,5为在透明电极和透明基板的界面反射并导入元件内的光,6为在透明基板和大气的界面反射并导入元件内的光,7为不在界面进行全反射、由元件释放的光,8a及8b为本发明的光干涉层,9为本发明的有机电致发光元件用透明基板,10为利用本发明中光干涉层的作用向元件外释放的光,11为利用本发明中光干涉层的作用向元件外释放的光,θ1为透明电极和透明基板的界面的全反射角,θ2为透明基板和大气的界面的全反射角。
实施发明的最佳方式
使用了本发明的透明基板的有机电致发光元件的例子如图1所示。图1构成的元件通常通过在本发明的透明基板9上依次层叠透明电极2、含发光层的有机层3、电极4而制得。这些堆积层的厚度非常薄,如果透明基板表面比较粗糙,则可能会破坏绝缘。因此,本发明的透明基板9的元件侧表面必须足够光滑。
此外,本发明也适用于顶发光方式的元件构成,该方式中,发光元件形成于其它基板后,与本发明的透明基板9组合制得。
如果采用本发明的具备光干涉膜的透明基板9,则从有机电致发光元件的发光层3以接近垂直的角度入射该透明基板9的光,由于各膜界面的反射光和入射光的相位相反,所以引发干涉作用反射光减少,根据界面的光的动量守恒原则透过光相应增加。因此,从透明基板正面有更多的光释放出来。
另一方面,如图2所示,在使用以往的未设置光干涉膜的透明基板1的情况下,从发光层3发出的光中以临界角θ1以上的角度入射透明基板1的光5被全反射。被全反射的光在另一电极表面4再次被全反射,通过这样的反复光被导入元件内而消失。即使是以临界角θ1以下的角度入射到透明基板1内的光,也会在透明基板和大气界面再次发生反射·折射,以临界角θ2以上的角度入射的光6被全反射,导入透明基板1内,光不能够从基板正面释放出来。
但是,如图3所示,如果采用本发明的具备光干涉膜8的透明基板,虽然原理目前还不十分清楚,但即使是从发光层在与透明基板的界面以临界角θ1及θ2以上的角度入射的光,也会从透明基板正面发出一些光。因此,仅使用本发明的透明基板,就能够使通常的有机电致发光元件的外部发光效率得到大幅度提高,进而如前所述,可同时提高有机电致发光元件的发光亮度和寿命。
本发明的透明基板在两面都具备光干涉膜,所以具有可采用浸渍法等能够以低廉的成本制得大面积基板的涂布方法的优点。
用于本发明的透明基板是石英玻璃、钠钙玻璃或有机薄膜等透明基体。其表面可形成滤色片和黑底。在该透明基板的两面形成至少1层具有使对发光层发出的光的反射量减少的折射率及膜厚的光干涉膜。例如,设置1层光干涉膜的情况下,基于下式设定膜厚和折射率以使反射率极小。
R={(n2-ng×nt)/(n2+ng×nt)}2
透明基板与透明电极连接形成反射性界面,在该界面设置单层膜,在特定波长λ下的反射为零的条件是若光干涉膜的膜厚为d、其折射率为n、透明基板的折射率为ng、透明电极的折射率为nt、任意自然数为N,则n=(ng×nt)1/2、且n×d=(λ/4)×N。通常,用于显示器的防反射膜时,考虑到可见光整个区域的反射,以λ为中心波长,即520nm为基础进行设定。本发明中N通常为1~50。
上式表示膜的折射率为基板折射率的平方根的振幅条件及其光学厚度为中心波长的1/4的N倍的相位条件是必要的。例如,透明基板的折射率为1.5、透明电极的折射率为2.0的情况下,可使用的单层膜的折射率为1.73,如果中心波长设定为520nm,则n×d=130nm,单层膜的膜厚可以约为75nm的N倍。这样,本发明的光干涉膜的折射率通常较好为1.1~2.3,特别好为1.2~1.9。此外,膜厚通常较好为10~500nm的N倍,特别好为50~200nm的N倍,通常较好为10~25,000nm,特别好为50~10,000nm。
此外,以在更广的波长范围内将反射控制在较低水平为目的,也可使用2层膜等多层膜。2层膜的构成较好为以下两种。一是折射率差较好为0.01~1.00的不同的高折射率膜和低折射率膜依次重叠而形成,设定为可抑制各膜的反射率的膜厚。另一种是结构相同,各膜的膜厚较好是中心波长的1/4的N倍和1/2的N倍。
为了在更广的波长范围内将反射率控制在较低水平,也可使用3层膜以上的多层膜。本发明的光干涉膜的构成材料只要能够实现通过上式求得的适当的折射率和膜厚,可采用有机单分子、有机高分子、无机金属氧化物,但最好是作为金属醇盐的缩聚物的溶胶-凝胶材料。在酸性化合物或碱性化合物存在下,在有机溶剂中通过金属醇盐的缩聚反应而获得该溶胶-凝胶材料。
酸性化合物包括硝酸、盐酸等无机酸和草酸、乙酸等有机酸。碱性化合物包括氨等。上述金属醇盐包括四甲氧基硅烷、四乙氧基硅烷、四丙氧基硅烷、四丁氧基硅烷等四烷氧基硅烷类,甲基三甲氧基硅烷、甲基三乙氧基硅烷、乙基三甲氧基硅烷、乙基三乙氧基硅烷、丙基三甲氧基硅烷、丙基三乙氧基硅烷、丁基三甲氧基硅烷、丁基三乙氧基硅烷、戊基三甲氧基硅烷、戊基三乙氧基硅烷、己基三甲氧基硅烷、己基三乙氧基硅烷、庚基三甲氧基硅烷、庚基三乙氧基硅烷、辛基三甲氧基硅烷、辛基三乙氧基硅烷、硬脂酰三甲氧基硅烷、硬脂酰三乙氧基硅烷、乙烯基三甲氧基硅烷、乙烯基三乙氧基硅烷、3-氯丙基三甲氧基硅烷、3-氯丙基三乙氧基硅烷、3-羟基丙基三甲氧基硅烷、3-羟基丙基三乙氧基硅烷、3-甲基丙烯酰三甲氧基硅烷、3-甲基丙烯酰三乙氧基硅烷、苯基三甲氧基硅烷、苯基三乙氧基硅烷、三氟丙基三甲氧基硅烷、三氟丙基三乙氧基硅烷等三烷氧基硅烷类,或二甲基二甲氧基硅烷、二甲基二乙氧基硅烷等二烷氧基硅烷类等,四乙醇钛、四丙醇钛、四丁醇钛等四烷氧基钛化合物,四乙醇锆、四丙醇锆、四丁醇锆等四烷氧基锆化合物,三丁醇铝、三异丙醇铝、三乙醇铝等三烷氧基铝化合物,二乙醇钡等二烷氧基钡化合物,五丙醇钽等五烷氧基钽化合物,四甲醇铈、四丙醇铈等四烷氧基铈化合物,三丙醇钇等三烷氧基钇化合物,五甲醇铌、五乙醇铌、五丁醇铌等五烷氧基铌化合物,二甲醇镉、二乙醇镉等二烷氧基镉化合物等,它们可单独使用也可2种以上组合使用。
上述烷氧基硅烷中,较好的是四甲氧基硅烷、四乙氧基硅烷等四烷氧基硅烷,甲基三甲氧基硅烷、甲基三乙氧基硅烷、乙基三甲氧基硅烷、乙基三乙氧基硅烷等三烷氧基硅烷,四烷氧基钛化合物,四烷氧基锆化合物,三烷氧基铝化合物,五烷氧基钽化合物。
上述烷氧基硅烷及金属醇盐的缩聚反应及金属盐溶解时所用的有机溶剂包括甲醇、乙醇、丙醇、丁醇等醇类,丙酮、甲基乙基甲酮等酮类,苯、甲苯和二甲苯等芳香族烃类,乙二醇、丙二醇、己二醇等二醇类,乙二醇一乙醚、乙二醇一丁醚、二甘醇一乙醚、二甘醇一丁醚、乙二醇二乙醚、二甘醇二乙醚等二醇醚类,N-甲基吡咯烷酮、二甲基甲酰胺等,它们可单独使用也可2种以上混合使用。此外,为了提高涂布液的长期保存性,以防止涂布液涂于基材时的干燥不均为目的,在水解结束后,蒸馏除去副产的低沸点醇类,能够实现涂布液中的溶剂的高沸点化和高粘度化。
以下,对本发明的有机电致发光元件用透明基板的制造方法的一例进行说明。首先,将上述金属醇盐缩聚物溶于上述有机溶剂制得涂布液。
该涂布液可通过浸涂、旋涂、转印、毛刷涂布、滚涂、喷涂等常用的涂布法涂布在透明基材的两面。从量产性考虑,最好采用一次操作就能够光滑地涂布于两面、且易于大面积化的浸涂法。所得涂膜根据其材质的不同在不同温度下干燥,以金属醇盐为原料时,在50~80℃的温度下干燥后,在100℃以上,最好是100~500℃的温度下进行0.5~1小时的烧结。该加热固化可采用焙烘炉和加热板等装置进行。
然后,根据需要通过研磨、加压、涂布透明性平坦化膜等方法对形成了涂膜的透明基板进行处理使其变得光滑。
这里对单层膜的情况进行了说明,但重复进行上述工序可形成多层的光干涉膜。当然,该多层的光干涉膜,其各层的组成、膜厚和折射率可以是分别独立的。
以下,通过实施例对本发明进行更详细的说明,但这些仅是例示,本发明并不仅限于此。
实施例1
利用浸渍法在玻璃基板的两面涂布二氧化硅系的溶胶-凝胶涂材(日产化学工业株式会社制,商品名LR-201A),形成膜厚103nm的膜。在焙烘炉中以510℃的温度对该基板加热进行烧结,历时30分钟。然后,从炉中取出,测得该涂膜的折射率为1.26,该基板在550nm波长的光中的反射率为2%。未进行本处理的玻璃基板的反射率为4%,这说明本处理减少了反射率。
实施例2
利用浸渍法在玻璃基板的两面涂布(二氧化硅+无机氧化物)系的溶胶-凝胶涂材(日产化学工业株式会社制,商品名H-7000、H-1000、LR-202),分别形成膜厚103nm的膜,层叠成膜。在焙烘炉中以510℃的温度对该基板加热进行烧结,历时30分钟。然后,从炉中取出,测得该基板在550nm波长的光中的反射率为0.3%。未进行本处理的玻璃基板的反射率为4%,这说明本处理减少了反射率。
实施例3
采用上述实施例1和实施例2获得的具有光干涉层的透明基板,以及作为比较例的未形成光干涉层的透明基板,分别制得有机电致发光元件。在各透明基板的一个光干涉层上通过溅射法形成厚100nm的作为透明电极的氧化铟锡(ITO)膜。此时的薄膜电阻值为20Ω/cm2。
在该表面依次形成厚70nm的作为空穴输送层材料的本申请人以前申请的日本专利特愿2000-341775号中记载的低聚苯胺衍生物(使苯胺的5倍体溶于DMF,然后在其中掺和3倍摩尔当量的5-磺基水杨酸)、厚50nm的作为发光层的N,N’-二(1-萘基)-N,N’-二苯基-1,1’-二苯基-4,4’-二胺(α-NPD)、厚50nm的作为电子输送层的三(8-羟基喹啉)铝(Alq3)。然后,蒸镀形成作为阴极的镁-银合金。此时的阴极的膜厚为200nm。
在以上制得的有机电致发光元件的两个电极上施加10V的电压,测定从透明基板正面发出的光量,将比较例的测定值作为1,与实施例1和实施例2的透明基板制得的元件的测定值作比较。
其结果是,实施例1的元件为1.2,实施例2的元件为1.3,由此可确认通过采用本发明的透明基板能够使以往构成的有机电致发光元件的表面发光亮度得到大幅度提高。
产业上利用的可能性
如上所述,本发明的有机电致发光元件用基板的量产性良好,而且用该基板构成元件能够制得向外部的光释放率有所提高的有机电致发光元件。
Claims (9)
1.有机电致发光元件用透明基板,它是有机电致发光元件的透明基板,其特征在于,在该透明基板的两面设置至少1层具有使对发光层发出的光的反射量减少的折射率及膜厚的光干涉膜。
2.如权利要求1所述的有机电致发光元件用透明基板,其特征还在于,光干涉膜具有1.1~2.3的折射率和10~25,000nm的膜厚。
3.如权利要求1或2所述的有机电致发光元件用透明基板,其特征还在于,光干涉膜为由高折射率膜和低折射率膜形成的多层膜或具有不同膜厚的多层膜。
4.如权利要求1~3中任一项所述的有机电致发光元件用透明基板,其特征还在于,光干涉膜通过在透明基板上涂布金属氧化物的溶胶-凝胶材料并烧结而获得。
5.如权利要求4所述的有机电致发光元件用透明基板,其特征还在于,金属氧化物的溶胶-凝胶材料通过在酸性化合物或碱性化合物存在下,在有机溶剂中由金属醇盐的缩聚反应获得。
6.如权利要求5所述的有机电致发光元件用透明基板,其特征还在于,金属醇盐为烷氧基硅烷或钛、锆、铝或钽的四烷氧基化合物。
7.如权利要求1~6中任一项所述的有机电致发光元件用透明基板,其特征还在于,光干涉膜由金属氧化物的溶胶-凝胶材料通过浸渍法成膜烧结于透明基板的两面而形成。
8.如权利要求1~7中任一项所述的有机电致发光元件用透明基板,其特征还在于,透明基板为石英玻璃、钠钙玻璃或有机薄膜。
9.有机电致发光元件,其特征在于,具有权利要求1~8中任一项所述的有机电致发光元件用透明基板。
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CN109624164A (zh) * | 2019-02-22 | 2019-04-16 | 广东省生物工程研究所(广州甘蔗糖业研究所) | 一种干涉彩虹膜溶液配方及其干涉薄膜与制备方法 |
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CN101523241B (zh) * | 2006-09-29 | 2011-02-16 | 木本股份有限公司 | 光学用薄膜及使用它的透明导电性构件、透明触控面板 |
CN102856463A (zh) * | 2011-06-27 | 2013-01-02 | 隆达电子股份有限公司 | 半导体发光元件 |
CN109624164A (zh) * | 2019-02-22 | 2019-04-16 | 广东省生物工程研究所(广州甘蔗糖业研究所) | 一种干涉彩虹膜溶液配方及其干涉薄膜与制备方法 |
CN109624164B (zh) * | 2019-02-22 | 2020-12-18 | 广东省科学院生物工程研究所 | 一种干涉彩虹膜溶液配方及其干涉薄膜与制备方法 |
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