CN1545722A - Plasma reactor coil magnet - Google Patents
Plasma reactor coil magnet Download PDFInfo
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- CN1545722A CN1545722A CNA028162579A CN02816257A CN1545722A CN 1545722 A CN1545722 A CN 1545722A CN A028162579 A CNA028162579 A CN A028162579A CN 02816257 A CN02816257 A CN 02816257A CN 1545722 A CN1545722 A CN 1545722A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
- Cleaning In General (AREA)
- Physical Vapour Deposition (AREA)
Abstract
A method for processing a workpiece is carried out with a plasma derived from a process gas in a plasma chamber of a plasma processing apparatus during a plasma processing operation. The apparatus includes an array of electromagnets mounted circumferentially around the plasma chamber. The method comprises generating a plasma from a process gas within the chamber and causing plasma particles to strike the workpiece, selecting distributions of current signals for the electromagnets, and applying each selected distribution to the electromagnets to impose more than one magnetic field topology on the plasma during the plasma processing operation.
Description
Present patent application is with U.S. Provisional Patent Application No.60/318, and 890 is that basis and requirement obtain its interests, and this patent application proposed September 14 calendar year 2001, quoted it here all as a reference.
Invention field
The present invention relates to plasma process system, more particularly, relate to the characteristic (characteristic) that is used to use the magnetic field control plasma that is applied on the plasma method and apparatus with the plasma treatment of improvement workpiece.
Background of invention
Plasma is the set of charged particle, and it can be used for removing material or deposition materials on workpiece from workpiece.During integrated circuit (IC) was made, plasma can be used for, for example, and from Semiconductor substrate corrosion (just, removing) material or sputter on Semiconductor substrate (deposition just) material.Plasma can be by applying radio frequency (RF) power supply signal the gas particle ionization formed to being retained in the indoor processing gas of plasma.The RF source can pass through electric capacity, by inductance or be coupled by electric capacity and inductance and plasma simultaneously.During the plasma treatment of workpiece, can on plasma, apply the characteristic of magnetic field, and increase control whereby the workpiece plasma treatment with the improvement plasma.
Sometimes it is indoor to use magnetic field that plasma is retained in during the plasma treatment of workpiece, perhaps changes the character (properties) of plasma during the plasma treatment.Magnetic field can be used for, and for example, plasma is retained in indoor, reduces the plasma loss of locular wall whereby and increases plasma density.The increase of plasma density the number of plasma particle of striking work, it passes through, and for example, reduces the processing of the required processing time improvement workpiece of corrosion workpiece.Use magnetic field to keep plasma and prevent that also plasma particle is deposited on the indoor surface, as chamber wall surface and electrode surface.
Magnetic field also is used to increase the uniformity of indoor plasma distribution.The uneven distribution of the indoor plasma of plasma is unfavorable, because uneven distribution can cause uneven workpiece to be handled.The plasma of uneven distribution is known from experience, and in some cases, causes just producing by plasma-induced damage at the indoor workpiece of handling.
Sometimes use permanent magnet or electromagnet array on plasma, to apply magnetic field.For example can arrange (arrange) thus permanent magnet array makes them apply magnetic field on the plasma of chamber interior, perhaps selectively, can (for example be arranged and be moved them, with respect to the chamber rotation) thus make them on plasma, apply rotating magnetic field, and it can improve the uniformity of plasma.
Summary of the invention
The present invention includes and be used to utilize magnetic field control to use the method and apparatus of plasma treating workpieces.
The accompanying drawing summary
Fig. 1 is the schematic diagram that is used for diagram example plasma process system of the present invention, this plasma treatment system shown and has been positioned at indoor workpiece of plasma processing apparatus plasma and plasma, and shown outside flux conducting structure (outer flux conducting structure) and around the electromagnet array of process chamber;
Fig. 2 is the schematic top view of a device part among Fig. 1, Fig. 2 has shown process chamber, bottom electrode (lower electrode), outside flux conducting structure and has centered on the electromagnet array of chamber, and shown the magnetic cross(ed) field layout (magnetic cross fieldtopology) that is applied on the chamber interior;
Fig. 3 is identical with Fig. 2, except that having shown the magnetic bucket field layout (magnetic bucket field topology) that is applied on the chamber interior;
Fig. 4 is the diagram that is used for providing to magnet array the example power circuit of electrical power;
Fig. 5 is the diagram that is used for providing to magnet array the second example power circuit of electrical power;
Fig. 6 is the diagram similar to Fig. 3, is applied to bucket the layout (bucket field topology) on the process chamber except that having shown by two electromagnet systems; With
Fig. 7 is the sketch that is presented at the electric current that flows in four adjacent electromagnets that install among Fig. 6.
Detailed Description Of The Invention
Fig. 1 has shown the diagram of the example of plasma process system 12 plasma processing apparatus (or reactor) 10.This plasma processing unit 10 comprises plasma chamber 14, and it is provided for keeping and supporting the interior zone 16 of plasma.A plurality of electrodes can be each other and are installed in the chamber 14 by the relation that plasma takes place with processing gas in the chamber 14.Thereby produce plasma by the processing gas in the chamber 14 for electrifying electrodes.For the ease of explanation of the present invention, only comprise two electrode assemblies in the device 10.Especially, first electrode assemblie 18 is installed on first side of chamber 14 (being positioned at the top of the inside 16 of example device 10 inner rooms 14).Second electrode assemblie 20 that is in chuck (chuck) electrode assemblie form is installed on second side of the chamber 14 relative with first side of chamber 14 (being positioned at the lower part of example device 10 chamber interior 16), is positioned at and first electrode assemblie 18 position separately.
First electrode assemblie 18 can comprise a plurality of electrode sections (segment), each section all with other the section electric insulation, and each section is all powered by relevant RF power supply independently, and is provided selected processing gas to be used for transmitting to the inside of plasma chamber with predetermined speed independently.Yet for the ease of explanation of the present invention, first electrode assemblie 18 is in the form of single shower-head type (showerhead-type) electrode.First electrode assemblie 18 comprises inner room 22 (being schematically shown by the dotted line among Fig. 1), its by gas supply line (gas supply line) and gas supply system 24 gas ground or liquid get in touch.A kind of (or multiple) selected gas can be fed to electrode assemblie 18 so that for example, clean room 14 or conduct form the processing gas (or source gas) of plasmas in chamber interior 16.Handling gas sends in the inside 16 of plasma chamber 14 from chamber 22 by a plurality of gas ports (ports) (not shown).Air-flow by first electrode ports is shown in direction arrow G series.
First and second electrodes 18,20 are by relevant matches network 30,32 and 34,36 electrical communication of RF power supply separately, and the RF power supply provides voltage signal V to related electrode 18,20 respectively
B1, V
B2Matching network 30,32 can assign between separately the RF power supply 34,36, thereby makes the maximizes power that passes to plasma by electrode assemblie 18,20 separately.Selectively, matching network 30,32 can be coupled with control system 60.
Each electrode assemblie 18,20 can be independently by liquid cools, and liquid circulates by the liquid chamber 39,41 (shown in dotted line) in each electrode assemblie 18,20 respectively from cooling system 38, returns cooling system then.This plasma processing unit 10 further comprises vacuum system 40, its by vacuum line (vacuum line) and plasma chamber 16 gas ground or liquid get in touch.Plasma processing apparatus 10 selectively (optionally) comprises voltage probe 44,46, and it is in form and capacitively relevant with each RF power supply 34,36 and the coupling of the transmission line (transmissionlines) between each related electrode assembly 18,20 accordingly of pair of electrodes.(a kind of example voltages probe has detailed explanation common the transfer in issued for approval U.S. Patent application 60/259,862 (the filing an application January 8 calendar year 2001), and quotes it here all as a reference.) this plasma processing unit 10 selectively comprises optic probe 48, is used for characteristic and the condition of determining plasma according to the spectrum and the optical property of plasma.
Electromagnet system or array 51 are circumferentially installed around plasma chamber 14 ground.This electromagnet 51 is exercisable, is used for applying one or more magnetic fields on plasma during carrying out plasma processing operation on the workpiece.Magnetic field apply the condition that (imposition) improved plasma, improved the processing of workpiece whereby.
Fig. 2 has shown the example of a plurality of electromagnets 51 about the layout of plasma chamber 14.This example device 12 comprises 12 electromagnets, is appointed as 51A-L.Each shown electromagnet 51 is in the form of coil magnet, and it comprises the coil of electric conducting material.Each coil all with power supply 53 electrical communication (schematic demonstration is arranged in Fig. 1).
Each coil magnet 51 of concrete array can be installed the coil that conductive material twines on air-core (air core) (not shown), perhaps selectively, can the coil that electric conducting material twines be installed on every side at for example permeability magnetic material (magnetically permeable material) core 55 (part as seen in Fig. 1).Each magnetic core 55 can have a cylindrical cross section (cylindrical cross section) (as shown in the figure), perhaps selectively, a cross section (vertically having longer size in example device 10) that prolongs arbitrarily can be arranged.The axis of each coil magnet 51 is aimed at (align with) radially with plasma chamber 14.That is to say that the axis of each coil magnet 51 extends radially from axis of imaginaries, this axis of imaginaries (being vertically in example reactor 10) between electrode assemblie 18,20 extends through the center of plasma chamber 14.Outside flux conducting structure 57 can become around relation ground to install with the array of coil magnet 51, as Fig. 2 institute best image.Each coil magnet 51 and each magnetic core 55 are all got in touch with flux conducting structure 57 magnetic fluxs.An example of flux conducting structure 57 is ringwall structure (annular wall structure).The outer wall construction 57 and the magnetic core 55 of each coil magnet 51 can be used permeability magnetic material, and for example iron is made up.Each magnetic core 55 can integrally form on the ring structure 57 outside, perhaps can form respectively and then be installed on the outer ring structure 57 with outer wall construction 57.
Can recognize that from Fig. 2 each coil magnet 51 and relevant magnetic core 55 thereof all extend between the wall construction 59 of ring structure 57 and plasma chamber 14 outside along radial direction.In example device 10, wall construction 59 is cylindric and is made of the sidewall of process chamber 14.The wall construction 59 of plasma chamber 14 can make up with suitable dielectric substance or suitable metal material.If wall construction 59 usefulness metal materials make up, then in structure, use nonmagnetic material, thereby make wall construction 59 can not be subjected to being applied to the influence in the magnetic field on the plasma in the plasma chamber 14 by coil magnet 51.
In Fig. 1, the magnet array in the example device 10 is vertically aimed at plasma, but this vertical layout is an example.Magnet array can have upright position arbitrarily about process chamber, and wherein includes structure (for example electrode) and material (for example workpiece or plasma).For example, can be made up and be arranged installing 10, thereby make magnet array, for example vertically with the workpiece top alignment, for example being slightly higher than workpiece ground aims at workpiece centre, for example or with the orthocenter (vertical center) of plasma aim at, perhaps be slightly higher than or be lower than plasma.
The control system 60 of plasma processing apparatus 10 is got in touch to monitor and/or to control them with each element of device 10.Control system 60 and gas supply system 24, vacuum system 40, cooling system 38, voltage probe 44,46, optic probe 48, each RF power supply 34,36 and power supply 53 electrical communication perhaps can be programmed to control their operation.Control system 60 can transmit control signal and receives input signal (for example feedback signal) from them to probe 44,46,48 and system element 24,34,36,38,40,53.Control system 60 can monitor and control the plasma treatment of workpiece.By control power supply 53, control system 60 can be controlled the transmission of electrical power to each coil magnet that is made of coil magnet 51 arrays, and control is applied to the character in the magnetic field on the plasma whereby.
Control system 60 can be installed computer system, it comprises processor, (wherein this memory is suitable for store instruction and data to the computer storage that can be visited by processor, and can comprise for example main storage, as random access memory, with auxiliary memory, as disc driver) and the data input and output that can get in touch with processor.
Method of the present invention is by reference example plasma process system 12 illustration in addition.The operation of plasma process system 12 can be by being understood with reference to figure 1.Pending workpiece (or substrate) 62 is placed on the seating surface that is provided by chuck (chuck) assembly 20.Control system 60 starting vacuum systems 40, its pressure that begins to reduce plasma chamber 14 inside 16 (typically is 10 to pressure of foundation (base pressure)
-7To 10
-4Hold in the palm), thus be that chamber 14 guarantees vacuum integrity (integrity) and cleannes.Control system 60 improves constant pressures to being suitable for forming plasma and with the level (suitable internal pressure can be extremely about 1000 millitorrs of for example about 1 millitorr) of plasma treating workpieces 62 then.In order in chamber interior 16, to set up suitable pressure, control system 60 starting gas supply systems 24, thereby regulate the flow of vital energy body to chamber interior 16 by the gas feed line with predetermined processing flow velocity activity, and if necessary, with gate valve (not shown) throttling vacuum system 40.Handle gas and can flow through the interior port of first electrode assemblie, shown in arrow G among Fig. 1.
Concrete gas that comprises in the gas supply system 24 or multiple gases depend on concrete plasma treatment application.For example use for plasma etching, gas supply system 24 can be supplied chlorine, hydrogen chloride, octafluorocyclobutane (octafluorocyclobutane) or various other gaseous carbon fluorine compounds; Use for chemical vapour deposition (CVD), system 24 can supply silane, ammonia, tungsten tetrachloride, titanium tetrachloride or similar gas.Plasma also can be used in the chemical vapor deposition (CVD) so that form metal, semiconductor or insulator (just conduction, semiconductive or insulating material) film on semiconductor wafer.Plasma enhanced CVD uses plasma to provide required reaction energy for the deposition of desired material.
The control system 60 starting RF power supply 34,36 relevant then with first and second electrode assemblies 18,20.RF power supply 34,36 can be that related electrode 18,20 provides voltage with the frequency of selecting.During plasma processing operation, control system 60 can be controlled RF power supply 34,36 independently to regulate for example frequency and/or the amplitude of voltage, and it drives related electrode assembly 18,20 each power supply 34,36 usefulness.
Low pressure is handled gas change plasma into thereby RF power supply 34,36 can be operated.Thereby power supply 34,36 can be operated and cause for example producing alternating electric field between first and second electrodes 18,20, and it induces electronics to flow between electrode 18,20.For example electronics is accelerated in this electric field, and heated electron stream transmits kinetic energy by the repeatedly collision between electronics and gas atom and the molecule to it in this field, makes each atom and the molecular ionization of handling gas.This processing has produced restrained and has been supported in plasma 54 in the chamber 14.
Because each RF power supply 34,36 is controlled independently by control system 60, so any one power supply can be operating as have low relatively frequency (just being lower than the frequency of 550KHz), medium frequency (just approximately the frequency of 13.56MHz) or high relatively frequency, about 60 to 150MHz.In the example of etching reactor, the RF power supply 34 that is used for first electrode assemblie 18 can be driven under the frequency of 60MHz, and the RF power supply 36 that is used for second electrode assemblie 20 can be driven under the frequency of 2MHz.In order to improve the previous reaction device, perhaps more generally, performance with plasma processor spare of one or more electrodes that under one or more frequencies, drive, thereby control system 60 can be programmed and operate during workpiece is handled, on plasma, apply one or more magnetic fields with the characteristic of controlling magnetic field (such as, for example, magnetic field layout and direction, magnetic field intensity, magnetic field duration etc.).
The present invention allows to produce a large amount of possible magnetic field layouts with the magnet 51 single arrays that do not have moving-member.Fig. 2 and 3 has shown two kinds of magnetic field layouts, and it can be applied to (plasma 54 that has only Fig. 1 to schematically show) on the plasma 54 by enough this magnet systems.Fig. 2 has shown cross(ed) field layout (cross field topology), and Fig. 3 has shown magnetic bucket field layout (magneticbucket field topology).
Illustrated cross(ed) field layout has the magnetic field line of non-linear (just arc).The cross(ed) field layout can be used to improve the uniformity of plasma.The raising of plasma uniformity had both increased the process uniformity of single substrate 62, had increased again by the process uniformity between device 10 processed continuously a plurality of substrates.Magnet 51 arrays can be operating as and rotate the cross(ed) field layout in the following manner.Magnetic bucket layout (Fig. 3) can be applied to the density to reduce the loss of plasma body wall and to increase plasma on the plasma.
Schematically illustrate the example of circuit 68 among Fig. 4, it is used to be embodied as the power supply 53 of coil magnet 51A-L power supply so that produce desirable magnetic field layout.Especially, each of AWG (Arbitrary Waveform Generator) series 70A-L can be by each coil magnet 51A-L (not shown among Fig. 4) electrical communication of associated amplifier 71A-L and electromagnet system.
Each AWG (Arbitrary Waveform Generator) 70A-L can with control system 60 electrical communication (by being electrically connected of not showing among Fig. 4).Control system 60 can be programmed to control each AWG (Arbitrary Waveform Generator) 70A-L independently, they have arbitrary shape, size (magnitude) and mutually current waveform from each generation each other, and it is used to be transferred to relevant coil magnet 51A-L makes it to polarize and produce the magnetic field that is applied on the plasma.All AWG (Arbitrary Waveform Generator) 70 can be phase locked (phase locked to) single low-power derived reference signal 72.Each generator 70 can both move the phase of self exporting with respect to the reference signal from 72.
The power supply of Fig. 4 arranges and makes the control system 60 (working by AWG (Arbitrary Waveform Generator) 70A-L series) can be to each coil magnet 51 supply of current waveform, its have with by the current waveform of all other AWG (Arbitrary Waveform Generator) generations in the series independently waveform, amplitude, phase and cycle mutually.Like this, the reference signal from derived reference signal 72 is used to make the current waveform synchronization that is transmitted into coil magnet 51 from the AWG (Arbitrary Waveform Generator) system.Control system 60 can be programmed to produce different waveforms for each AWG (Arbitrary Waveform Generator) 70 independently, and it has the start-up phase that is locked in from the reference signal in source 72.This is arranged in huge flexibility is provided when for example applying two or more magnetic field layout on plasma.This layout allows control system 60 applying for example two kinds of magnetic field layouts each other continuously during the plasma processing operation on concrete substrate.These two kinds of layouts can be mutually the same or can be differed from one another.Layout can be static or can rotate.
For example, this layout (just, for each coil magnet is used separately AWG (Arbitrary Waveform Generator)) allow the operator to be control system 60 programmings, thus on plasma, apply magnetostatic field layout (for example, orientation) and rotating magnetic field layout handling operating period.Thereby the every kind of field layout that is applied can both the interior special variation of selected realization plasma.For example, can provide the uniformity of rotation cross(ed) field layout with the improvement plasma.As another example, this layout also allows to produce waveform, even make the magnetic field applied rotate, the specific position place in process chamber also is applied with the field (for example low or High-Field is regional) of localization.This localization field can be used for revising because the azimuthal variation of the plasma properties that for example non-axial symmetry gas injection (non-axisymmetricgas injection) and plasma pumping (pumping) etc. cause.
Another kind of can schematically the demonstration as Fig. 5 as the circuit 76 of power supply 53.Single AWG (Arbitrary Waveform Generator) 77 driving amplifiers series 71A-L, its each all to relevant coil magnet (not shown among Fig. 5) supply of current.Phase retardation circuit 78 is coupling between all amplifiers (all but one of the amplifiers) of AWG (Arbitrary Waveform Generator) and bar one.Basically, send identical signal to each coil magnet 51A-L, unique difference is this signal because the existence of phase retardation circuit and out-phase each other.Thereby circuit 76 can be used in the following occasion, and the current waveform to coil magnet 51 wherein to be applied has identical waveform and cycle, but difference mutually each other.The magnetic field layout that power circuit 76 can provide rotating magnetic field layout or angular orientation to change.Field layout by power circuit 76 generations and rotation depends on multiple factor, the shape that comprises the current waveform that is transmitted into coil magnet, the number of coil magnet relative position in the coil magnet system, differing between the relative field strength of each coil magnet 51 and the current waveform signal.AWG (Arbitrary Waveform Generator) 70 generations that control system 60 can be programmed with control circuit 76 for example have the rotation cross(ed) field layout of non-linear (for example arc) field wire.
Operation
Control system 60 can (use for example power circuit 68) in arbitrary (perhaps whole) coil magnet 51 and produce stable electric current or can be in arbitrary (perhaps whole) coil magnet 51A-L generation time variable-current (time changing current).By the stable of coil magnet 51 and/or the time become (time-varying) electric current distribution determined to be applied to the layout in the magnetic field on the plasma and determined instant (in time) change of magnetic field layout.Thereby the suitable current waveform can be sent to coil magnet 51 causes for example being applied to magnetic field rotation on the plasma.
The current waveform that offers each coil magnet 51A-L each coil that radially polarizes.During radial polarised, N and S magnetic polarization separately guaranteed in the opposite end of each coil magnet.Substantially, magnetic field line extends between the antipode of coil magnet 51.The sense of current that flows in each coil has been determined the polarization of each coil magnet.The size that flows through the electric current of coil magnet has been determined the intensity in the magnetic field that produced by each coil magnet, thereby has determined to be applied to the intensity in the magnetic field on the plasma.
Other layout of magnet array is also possible.For example, although the axis of each coil magnet 51 radially extends from the axis of imaginaries that extends between electrode assemblie 18,20 in example reactor 10, other layout is also possible.For example, thus each coil magnet 51 can be directed axis and the reactor 10 " tangent " that makes it.The coil of each tangential orientation can be air windings (air coil) or can be to twine (wound) around core material.When each coil all centered on the material magnetic core and twines, each magnetic core can both be the structure of isolating or form continuous structure, for example ring or yoke (yoke), a part.
Everything to layout have some shortcomings (with respect to the radially aligning (alignment) in the example reactor 10).For example, when the radially extension array that uses electromagnet produces magnetic field, in the most magnetic flux line inlet chamber.Yet when using arranged tangential, most of magnetic flux field wires trend towards the flows outside around plasma chamber 14, particularly when coil twines around the yoke (yoke) of embracing chamber, less relatively amount meeting " leakage " or " disperse " (fringe) go out the side of each arranged tangential coil and enter plasma chamber 14.Like this, arranged tangential relies on the fringing field (fringing field) on each tangential coil one side to apply magnetic field on indoor plasma.Because utilize the magnet system of coil arranged tangential to rely on fringing field on plasma, to apply magnetic field, so need more power to produce the concrete layout that has special field intensity when using radial arrangement, have the homologous field layout of same intensity with generation.The magnet system of radial arrangement uses than the needed electric current still less of the magnet system of suitable arranged tangential.Because arranged tangential relies on the field wire that sends (emerging) from the side of each coil, so each coil is all launched towards the field wire of chamber and for example left the field wire of chamber from opposite side.Also need an outer peripheral around structure so that will open around the zone and the magnetic field shielding (shield) of plasma processing apparatus.For example, when the electromagnet of tangential orientation twines around yoke,, just need second magnetic conduction shielding (permeable shield) if will open around the zone and the magnetic field shielding of this device.In the example arrangement that second magnetic conduction shielding or other flux shielding structure (flux shielding structure) show in Fig. 1 and 2 for example is unwanted, because structure 57 is not only carried out the flux emission function but also carried out function of shielding.
Fig. 2,3 and 6 illustrates the example that the enough coil magnet 51A-L of energy are applied to the magnetic field layout on the plasma.In Fig. 2,3 and 6, the sense of current that flows through each coil magnet 51A-L is represented with direction arrow.In Fig. 2,3 and 6, the relative size of electric current is represented roughly with the relative size of direction arrow in each coil magnet.The disappearance of direction arrow represents that size is zero transient current in the relevant coil magnet 51.Iron hoop structure 57 is each layout magnetic confining field line.
Rotation cross(ed) field layout for example can be utilized, and power circuit 68 or 76 is applied on the plasma.For example, compound current waveform can feed back to each coil magnet 51, its with respect to previous coil along the direction of rotation phase shift opposite with magnetic field layout direction of rotation.This method allows the cross(ed) field layout to need not to be rotated with mechanically moving any coil magnet.
Fig. 2 has shown the rotation cross(ed) field layout at special instantaneous place.In this moment, coil magnet 51A has the opposite and relative high electric current of size of guiding each other with 51B, coil magnet 51L and 51C have each other the electric current that guiding is opposite and size is lower than the electric current in coil magnet 51A and the 51B, and coil magnet has the electric current (shown in the relative size of direction arrow) that guiding is opposite, size diminishes in succession to 51K and 51D, 51J and 51E and 51I and 51F.The nonlinear magnetism field wire extends between the coil of every pair of coil magnet basically, shown in the arcuate arrows in the process chamber 14.It is zero transient current (for example depend on institute attempt to apply definite field (exact field)) that coil magnet 51H and 51G can have size.
From Fig. 2, it is to be further appreciated that magnetic field line basically separately relevant coil magnet 51B, 51C, 51D, 51E and the 51F of coil magnet 51A, 51L, 51K, 51J and the 51I from the side of chamber on the opposite flank of chamber extend.The reduction of size of current (on the opposite flank of chamber) in fact produced intensity from about 11 position of orientation to about 5 magnetic field gradients that position of orientation increases.This gradient can help to compensate the ExB drift.If uniform field is intersected with the plasma chamber 14 parallel with workpiece, and at the indoor existence electric field vertical with workpiece, the ExB drift will appear.The vector product of these electromagnetic fields is parallel with workpiece and all vertical with two field wire series.This causes electronics to be led along vector product direction (" preferably " direction just), and it causes plasma more intensive in a zone (perhaps " corner ") of plasma chamber.This causes the inhomogeneous of workpiece processing, and this is unfavorable.Revise this ExB drift, will the rotating magnetic field layout.If yet the magnetic field layout is uniformly, rotating field only causes the periphery rotation of " focus " (zone that electron density is high relatively) around plasma so.Revise this effect, will make the field wire bending of magnetic field layout, its cause electronics fully " fan-out " to reduce hot spot-effect.
Fig. 3 has shown barrel shape field layout (a perhaps bucket layout), and it forms around the magnetic " bucket " of the wall of chamber 14.This layout has produced the arc lobe (lobe) of the magnetic field line that extends to chamber central authorities.These lobes trend towards plasma is accumulated in the central authorities of chamber.This has many benefits, comprises the sidewall and the number of chamber 14 interior other surperficial plasma particles and the density (by it is limited in the littler spatial volume) of increase plasma that for example trend towards reducing the bump chamber.Plasma density is big more, and for example the speed of corrosion or deposition is fast more.Workpiece processing faster can improve the commodity production rate during for example semiconductor manufacturing.
As shown in Figure 3, bucket layout can obtain by a pair of adjacent windings magnet 51 of the equal opposite polarity electric current (the opposite electric current of direction just) of conduction to array.Reactor 12 can also be built into provides the magnetic field line with rotation or vibration bucket layout.
Fig. 6 has shown the schematic diagram of the device 80 that is used for applying rotary barrel field layout on plasma.Device 80 is identical with device 12, except the number difference that centers on the coil magnet of installing its chamber 14.Identical structure is distinguished with identical reference numerals and no longer further notes and commentary between two embodiment 12 and 80.The number of 14 coil magnet of installing has determined the resolution (resolution) by the magnetic field of magnet system generation around the chamber.That is to say that circumferentially the coil magnet around the location, chamber is many more, a bucket layout covering chamber pars intramuralis is " meticulous " more.In order to control " periphery " magnetic field (just) better, the relatively more less relatively coil of big figure is installed around the chamber 14 of device 80 with wall magnetic field adjacent part.When the needs high-resolution field, the interior end of adjacent windings magnet 51 cores almost contacts with each other, as shown in Figure 6.Because with respect to device 12, device 80 has for example coil magnet 51 of installing around its chamber of twice quantity, can be operated to obtain bucket the layout meticulousr than the bucket that obtains with device 12 a layout resolution so install 80.Employed coil number depends on needed resolution.Substantially, magnet numbers is big more, and a resolution is meticulous more.
Lobe length can by in couples, become actuating solenoid such as three ground to increase.That is to say, when electromagnet 51 become " to " operate when producing bucket layout, instantaneous at each, the size and Orientation of electric current is mutually the same in coil 51A and the B.Similarly, the size and Orientation of electric current is mutually the same in coil 51C and the D.Like this, coil 51A and B (and coil 51C and D etc.) in fact bring into play the function of single coil.The lobe that extends into an indoor bucket layout is long more, and the plasma that " extruding " enters plasma chamber 14 central authorities is many more, improves the density and the reaction speed of plasma whereby.
Fig. 6 has shown at time (time)=t
xThe time magnetic field line that occurs.Time t
xBe also illustrated on the sketch of Fig. 7.At time t
xThe place, each all has maximum current a series of coil magnet (series that comprises 51B and 51D), and another series coil magnet (series that comprises 51A and 51B) each all to have size be zero electric current.Adjacent coil has the opposite electric current of guiding in each series (for example 51B and 51D), shown in the sense of current arrow of opposite guiding among Fig. 6 and Fig. 7.Can recognize that from Fig. 7 each current waveform all is a sine curve.Can also recognize that from the sketch of Fig. 7 the magnetic field that is produced by rotation (or vibration) bucket layout all can not disappear at any some place, because electric current all is zero in any moment never in all coils magnet 51A-X during plasma processing operation.
The structure of device 80 and operation be an example just.The device that comprises that three or more independent magnetic is is constructed in our expection, to produce for example three kinds or multiple rotating magnetic field layout.
Handle during the processing of quality and output at concrete workpiece (as an example, for example semiconductor), on plasma, can apply one or more magnetic field layouts.For example, during corrosion operation (perhaps selectively, electroless copper deposition operation), wherein on the surface of wafers of semiconductor material, figure is corroded, can on plasma, apply selected magnetic field layout.Because the system of AWG (Arbitrary Waveform Generator) and coil magnet 51 can be used to produce magnetic field, and,, the producer corrodes (or deposition) suitable magnetic field layout of application choice (or a plurality of magnetic fields layout) so can being concrete semi-conducting material and concrete semiconductor because AWG (Arbitrary Waveform Generator) can be controlled by control system 60.For concrete optimum organization of using definite magnetic field layout can be carried out to experience.That is to say that during the processing of particular type wafer, concrete current waveform can feed back to the selected coil magnet of one or more magnet systems and check this result.The quality of corrosion/deposition results can be revised or checked according to employed magnetic field layout in the corrosion/deposition processes.If for example damage of workpiece, if perhaps result is inhomogeneous, then can change the distribution that (by reprogramming control system 60) feeds back to the current waveform of coil magnet 51, so that for example change the layout (or a plurality of layout) be applied to the magnetic field layout on the plasma, intensity, gradient, cycle etc.
When semiconductor in that plasma is indoor when handling, semiconductor is damaged easily, this be since in the plasma inhomogeneous the concentrating (no matter being high concentration or low concentration region) of electronics cause.Great majority since the damage of the inhomogeneous appearance of plasma density near the end of handling operation the time, occur.During handling, workpiece (for example semiconductor) can use two or more magnetic field layouts, and may be to alleviate owing to the inhomogeneous damage that occurs of plasma.During the first that handles operation, when workpiece is not easy to increase processing speed whereby owing to during inhomogeneous damage of plasma density, can apply the density of one or more barrels field layout with the increase plasma on plasma relatively.By density at the early stage increase plasma of handling operation, therefore can for example quickly material be eroded from workpiece, when finishing near processing then, when becoming dangerous, can on process chamber, apply another magnetic field or multiple magnetic field uniformity with final critical period (critical stage) plasma of improved treatment operation with high processing speed like this.As another example, the incipient stage of handling, can apply the bucket layout with relatively large lobe on plasma, apply the bucket layout with medium size lobe then on plasma, the back applies the bucket layout with less relatively lobe on plasma again.Handling operating period, the size by reducing a bucket layout lobe (substep ground or in time continuously), the density of plasma can reduce gradually along with the carrying out of handling.At the final critical period of plasma treatment, can on plasma, apply the rotation cross(ed) field layout with crooked field wire is handled final critical period plasma with increase uniformity.
Local inhomogeneous can be owing to multiple known reason occurs in plasma, these reasons for example comprise owing to the nonuniform gas injection, be applied to the indoor inhomogeneous pumping of inhomogeneous RF exciting field, plasma on the plasma etc.Because each coil magnet can be driven by AWG (Arbitrary Waveform Generator) independently, so controller can be programmed local inhomogeneous with in the compensation plasma body of the distribution of electric current that control sends to magnet array.Like this, controller can be programmed the generation rotating field, it provides localization in applying magnetic field inhomogeneous inhomogeneous with the density that occurs in the compensation plasma body.
Although should be appreciated that the electrode of plasma chamber is described as each and is all driven by the associated electrical potential source, this is not to mean that each electrode must be driven by the associated electrical potential source.Like this, for example, one of the pair of electrodes 18,20 of system 10 or another just may be in ground connection level or any other static state (just constant) voltage levvl consistently during handling.
Many characteristics of the present invention and advantage can be apparent from detailed patent description, so accessory claim intention contains whole these characteristics and the advantage of illustrated method, and it defers to the real spirit and scope of the present invention.Further, because those skilled in the art can easily carry out various modifications and change, do not expect to limit the invention to the definite structure and the operation of institute's diagram and explanation.And, method and apparatus of the present invention, be similar to complicated in essence relevant apparatus and the method for using in the semiconductor technology, usually will be carried out best by the appropriate value of determining operating parameter empirically, be that given application realizes best design by carrying out computer simulation perhaps.Therefore, should consider correction and equivalence that all are suitable, and still be within the spirit and scope of the present invention.
Claims (26)
1. method with plasma treating workpieces, this plasma is obtained from the indoor processing gas of plasma of plasma processing apparatus during plasma processing operation, this device comprises the electromagnet array of circumferentially installing around plasma chamber, and this method comprises:
Produce plasma and make the plasma particle striking work by indoor processing gas;
Selecting current signal for described electromagnet distributes; With
Thereby be applied to described electromagnet and on plasma, apply during the plasma processing operation each described selection being distributed more than a kind of magnetic field layout.
2. the process of claim 1 wherein that at least a magnetic field layout is non-rotating magnetic field layout.
3. the process of claim 1 wherein that at least a magnetic field layout is the rotating magnetic field layout.
4. the method for claim 3, wherein when described at least a rotating magnetic field layout is applied on the described plasma, the inhomogeneities of the plasma density of the described plasma of this at least a rotating magnetic field layout correction.
5. the method for claim 4, wherein at least a rotating magnetic field layout is the cross(ed) field layout.
6. the method for claim 5, wherein the magnetic field line of cross(ed) field layout is non-linear.
7. the method for claim 2, wherein at least a non-rotating magnetic field layout are bucket layouts.
8. the process of claim 1 wherein that this comprises a cross(ed) field layout and a bucket layout more than a kind of magnetic field layout.
9. the method for claim 1, wherein said applying comprises current signal is provided, thereby during the first of plasma processing operation, on plasma, apply a bucket layout, during the second portion of plasma processing operation, on plasma, apply the cross(ed) field layout.
10. the method for claim 9 wherein applies a multiple bucket layout so that increase the density of plasma with predetermined speed on plasma during the first of plasma processing operation.
11. the method for claim 10, wherein the magnetic field line of cross(ed) field layout is non-linear.
12. the method for claim 11, the wherein heterogeneity of the described plasma of cross(ed) field layout correction.
13. the process of claim 1 wherein that at least a magnetic field layout changes angle orientation during handling.
14. the method for claim 13, the described at least a magnetic field layout that wherein changes angle orientation during handling changes angle orientation by rotation.
15. method with plasma treating workpieces, this plasma is obtained from the indoor processing gas of plasma of plasma processing apparatus during plasma processing operation, this device comprises the electromagnet array of circumferentially installing around plasma chamber, and this method comprises:
Produce plasma and make the plasma particle striking work by indoor processing gas; With
Distribute for described electromagnet provides current signal, thereby on plasma, apply the bucket magnetic field layout of rotation at described electromagnet during the plasma processing operation.
16. the method for claim 15, wherein this electromagnet array comprises electromagnet first system and electromagnet second system, and each electromagnet of each system is positioned between a pair of electromagnet of another system.
17. the method for claim 16, wherein the intrasystem current signal of at least one electromagnet is in each instantaneous size with non-zero of described rotation.
18. a plasma processing apparatus that is used to handle workpiece, this plasma processing unit comprises:
Plasma chamber, it comprises the interior zone that is used to support plasma;
The source takes place in plasma;
Vacuum system, the interior zone fluid communication of itself and plasma chamber;
Gas supply system, the interior zone fluid communication of itself and plasma chamber;
A plurality of coil magnet, it is circumferentially installed around plasma chamber, and each coil magnet has the axis that extends from the radial axis of plasma chamber;
A plurality of AWG (Arbitrary Waveform Generator), each all with a plurality of coil magnet in a relevant electrical communication;
Control system, itself and gas supply system, vacuum system, cooling system and a plurality of AWG (Arbitrary Waveform Generator) electric coupling, this control system is set at this AWG (Arbitrary Waveform Generator) of operation, thereby makes this coil magnet apply the magnetic field layout during the plasma processing operation on plasma.
19. the plasma processing apparatus of claim 18, described plasma generation source comprise one or more indoor electrode assemblie and one or more RF power supplys of being installed in, each of RF power supply all is coupled with the related electrode electrical component.
20. the plasma processing apparatus of claim 19, wherein each coil magnet is an air windings.
21. the plasma processing apparatus of claim 19, wherein each coil magnet has the permeability magnetic material core.
22. the plasma processing apparatus of claim 21 further comprises the outside flux conducting structure of installing around the coil magnet array, each coil magnet and each core are all got in touch with flux conducting structure magnetic flux.
23. the plasma processing apparatus of claim 22, wherein the flux conducting structure is a ringwall structure.
24. the plasma processing apparatus of claim 23, wherein this ringwall structure makes up with permeability magnetic material.
25. the plasma processing apparatus of claim 24, wherein each core is installed on the ringwall structure.
26. the plasma processing apparatus of claim 18, each of wherein said a plurality of AWG (Arbitrary Waveform Generator) all by in a plurality of amplifiers relevant one with a plurality of coil magnet in a relevant electric coupling.
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| US31889001P | 2001-09-14 | 2001-09-14 | |
| US60/318,890 | 2001-09-14 |
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| US (1) | US20040168771A1 (en) |
| JP (1) | JP2005503648A (en) |
| KR (1) | KR20040028985A (en) |
| CN (1) | CN1316547C (en) |
| AU (1) | AU2002341591A1 (en) |
| TW (1) | TWI293855B (en) |
| WO (1) | WO2003025971A2 (en) |
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| CN113151809A (en) * | 2021-04-01 | 2021-07-23 | 上海征世科技股份有限公司 | Microwave plasma processing device |
Also Published As
| Publication number | Publication date |
|---|---|
| US20040168771A1 (en) | 2004-09-02 |
| KR20040028985A (en) | 2004-04-03 |
| WO2003025971A2 (en) | 2003-03-27 |
| CN1316547C (en) | 2007-05-16 |
| WO2003025971A3 (en) | 2003-12-11 |
| AU2002341591A1 (en) | 2003-04-01 |
| TWI293855B (en) | 2008-02-21 |
| JP2005503648A (en) | 2005-02-03 |
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