CN1519856A - 利用氧化层和电流诱导加热的热辅助磁写入 - Google Patents
利用氧化层和电流诱导加热的热辅助磁写入 Download PDFInfo
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- CN1519856A CN1519856A CNA200310113899XA CN200310113899A CN1519856A CN 1519856 A CN1519856 A CN 1519856A CN A200310113899X A CNA200310113899X A CN A200310113899XA CN 200310113899 A CN200310113899 A CN 200310113899A CN 1519856 A CN1519856 A CN 1519856A
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/30—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
- H01F41/302—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F41/305—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices applying the spacer or adjusting its interface, e.g. in order to enable particular effect different from exchange coupling
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
- H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
Abstract
Description
Claims (29)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/295,678 | 2002-11-15 | ||
US10/295,678 US6771534B2 (en) | 2002-11-15 | 2002-11-15 | Thermally-assisted magnetic writing using an oxide layer and current-induced heating |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1519856A true CN1519856A (zh) | 2004-08-11 |
CN100456384C CN100456384C (zh) | 2009-01-28 |
Family
ID=32297275
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB200310113899XA Expired - Lifetime CN100456384C (zh) | 2002-11-15 | 2003-11-11 | 非易失性磁随机存取存储器器件及其制造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US6771534B2 (zh) |
JP (2) | JP4051334B2 (zh) |
CN (1) | CN100456384C (zh) |
TW (1) | TWI232449B (zh) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100448015C (zh) * | 2005-11-17 | 2008-12-31 | 旺宏电子股份有限公司 | 包括有二字线晶体管的磁性存储元件及其读取和编程方法 |
CN102468425A (zh) * | 2010-11-08 | 2012-05-23 | 三星电子株式会社 | 磁存储器件 |
CN103208303A (zh) * | 2012-01-16 | 2013-07-17 | 克罗科斯科技公司 | Mram存储单元和用于使用具有减小的场电流的热辅助写操作向mram存储单元写入的方法 |
CN101465407B (zh) * | 2007-12-21 | 2014-09-24 | 原子能委员会 | 热辅助磁写入存储器 |
CN109994145A (zh) * | 2019-03-20 | 2019-07-09 | 浙江大学 | 一种金属绝缘层金属结构的产热时间提取方法 |
CN110418973A (zh) * | 2017-06-12 | 2019-11-05 | 西部数据技术公司 | 使用自旋霍尔效应的磁传感器 |
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US7023723B2 (en) | 2002-11-12 | 2006-04-04 | Nve Corporation | Magnetic memory layers thermal pulse transitions |
US6952364B2 (en) * | 2003-03-03 | 2005-10-04 | Samsung Electronics Co., Ltd. | Magnetic tunnel junction structures and methods of fabrication |
KR100615600B1 (ko) * | 2004-08-09 | 2006-08-25 | 삼성전자주식회사 | 고집적 자기램 소자 및 그 제조방법 |
US7161875B2 (en) * | 2003-06-12 | 2007-01-09 | Hewlett-Packard Development Company, L.P. | Thermal-assisted magnetic memory storage device |
WO2005001490A2 (en) | 2003-06-23 | 2005-01-06 | Nve Corporation | Thermally operated switch control memory cell |
US7372722B2 (en) * | 2003-09-29 | 2008-05-13 | Samsung Electronics Co., Ltd. | Methods of operating magnetic random access memory devices including heat-generating structures |
KR100568512B1 (ko) * | 2003-09-29 | 2006-04-07 | 삼성전자주식회사 | 열발생층을 갖는 자기열 램셀들 및 이를 구동시키는 방법들 |
KR100835275B1 (ko) * | 2004-08-12 | 2008-06-05 | 삼성전자주식회사 | 스핀 주입 메카니즘을 사용하여 자기램 소자를 구동시키는방법들 |
KR100615089B1 (ko) * | 2004-07-14 | 2006-08-23 | 삼성전자주식회사 | 낮은 구동 전류를 갖는 자기 램 |
US7369428B2 (en) * | 2003-09-29 | 2008-05-06 | Samsung Electronics Co., Ltd. | Methods of operating a magnetic random access memory device and related devices and structures |
US20060281258A1 (en) * | 2004-10-06 | 2006-12-14 | Bernard Dieny | Magnetic tunnel junction device and writing/reading method for said device |
FR2860910B1 (fr) * | 2003-10-10 | 2006-02-10 | Commissariat Energie Atomique | Dispositif a jonction tunnel magnetique et procede d'ecriture/lecture d'un tel dispositif |
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- 2003-11-12 JP JP2003383176A patent/JP4051334B2/ja not_active Expired - Fee Related
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CN102468425A (zh) * | 2010-11-08 | 2012-05-23 | 三星电子株式会社 | 磁存储器件 |
CN102468425B (zh) * | 2010-11-08 | 2015-08-05 | 三星电子株式会社 | 磁存储器件 |
CN103208303A (zh) * | 2012-01-16 | 2013-07-17 | 克罗科斯科技公司 | Mram存储单元和用于使用具有减小的场电流的热辅助写操作向mram存储单元写入的方法 |
CN103208303B (zh) * | 2012-01-16 | 2017-04-19 | 克罗科斯科技公司 | Mram存储单元和用于使用具有减小的场电流的热辅助写操作向mram存储单元写入的方法 |
CN110418973A (zh) * | 2017-06-12 | 2019-11-05 | 西部数据技术公司 | 使用自旋霍尔效应的磁传感器 |
CN110418973B (zh) * | 2017-06-12 | 2022-04-29 | 西部数据技术公司 | 使用自旋霍尔效应的磁传感器 |
CN109994145A (zh) * | 2019-03-20 | 2019-07-09 | 浙江大学 | 一种金属绝缘层金属结构的产热时间提取方法 |
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JP4056555B2 (ja) | 2008-03-05 |
TW200423123A (en) | 2004-11-01 |
US20040095801A1 (en) | 2004-05-20 |
JP4051334B2 (ja) | 2008-02-20 |
JP2004172614A (ja) | 2004-06-17 |
JP2008004952A (ja) | 2008-01-10 |
CN100456384C (zh) | 2009-01-28 |
US6771534B2 (en) | 2004-08-03 |
TWI232449B (en) | 2005-05-11 |
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