CN1495849A - 制造纳米soi晶片的方法及由该法制造的纳米soi晶片 - Google Patents
制造纳米soi晶片的方法及由该法制造的纳米soi晶片 Download PDFInfo
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- CN1495849A CN1495849A CNA031275508A CN03127550A CN1495849A CN 1495849 A CN1495849 A CN 1495849A CN A031275508 A CNA031275508 A CN A031275508A CN 03127550 A CN03127550 A CN 03127550A CN 1495849 A CN1495849 A CN 1495849A
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- 238000000034 method Methods 0.000 title claims abstract description 52
- 239000001257 hydrogen Substances 0.000 claims abstract description 23
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 23
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 22
- 150000002500 ions Chemical class 0.000 claims abstract description 19
- 238000004519 manufacturing process Methods 0.000 claims abstract description 16
- 238000001039 wet etching Methods 0.000 claims abstract description 16
- 239000012212 insulator Substances 0.000 claims abstract description 8
- 238000010438 heat treatment Methods 0.000 claims description 48
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 claims description 36
- RPAJSBKBKSSMLJ-DFWYDOINSA-N (2s)-2-aminopentanedioic acid;hydrochloride Chemical compound Cl.OC(=O)[C@@H](N)CCC(O)=O RPAJSBKBKSSMLJ-DFWYDOINSA-N 0.000 claims description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 21
- 229910052710 silicon Inorganic materials 0.000 claims description 21
- 239000010703 silicon Substances 0.000 claims description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 20
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 20
- 238000005530 etching Methods 0.000 claims description 18
- 238000002347 injection Methods 0.000 claims description 10
- 239000007924 injection Substances 0.000 claims description 10
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 7
- 239000000243 solution Substances 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 3
- 239000011259 mixed solution Substances 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 claims 54
- 239000012535 impurity Substances 0.000 abstract description 5
- 238000005498 polishing Methods 0.000 abstract description 3
- 238000005468 ion implantation Methods 0.000 abstract 2
- 239000005543 nano-size silicon particle Substances 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 238000012545 processing Methods 0.000 description 8
- 238000012360 testing method Methods 0.000 description 8
- 239000000758 substrate Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 230000014509 gene expression Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 230000013011 mating Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000005070 sampling Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 230000010148 water-pollination Effects 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- -1 oxonium ion Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000007634 remodeling Methods 0.000 description 1
- 239000012858 resilient material Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/959—Mechanical polishing of wafer
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
Abstract
Description
加速电压(KeV) | 10 | 20 | 30 | 50 | 75 | 100 | 150 | 200 |
Rp(nm) | 180.8 | 299.4 | 389.6 | 542.4 | 718 | 900 | 1300 | 1780 |
ΔRp(nm) | 55.9 | 73.1 | 81.5 | 91.5 | 99.3 | 106.6 | 120.3 | 129.5 |
Vac(Kev) | 26 | 42 | 45.2 |
ΔRp(nm) | 77 | 87 | 88 |
rms(nm) | 3.16 | 5.72 | 6.55 |
Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2002-0047351A KR100511656B1 (ko) | 2002-08-10 | 2002-08-10 | 나노 에스오아이 웨이퍼의 제조방법 및 그에 따라 제조된나노 에스오아이 웨이퍼 |
KR200247351 | 2002-08-10 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1495849A true CN1495849A (zh) | 2004-05-12 |
CN100389477C CN100389477C (zh) | 2008-05-21 |
Family
ID=31492866
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB031275508A Expired - Lifetime CN100389477C (zh) | 2002-08-10 | 2003-08-06 | 制造纳米soi晶片的方法及由该法制造的纳米soi晶片 |
Country Status (4)
Country | Link |
---|---|
US (2) | US6884694B2 (zh) |
JP (2) | JP2004080035A (zh) |
KR (1) | KR100511656B1 (zh) |
CN (1) | CN100389477C (zh) |
Cited By (7)
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---|---|---|---|---|
CN1312328C (zh) * | 2005-05-16 | 2007-04-25 | 浙江大学 | 用于纳米光子技术的单晶硅纳米膜的制备方法 |
CN100369188C (zh) * | 2005-05-16 | 2008-02-13 | 中国科学院半导体研究所 | 镜像电荷效应量子元胞自动机的制作方法 |
CN101490806B (zh) * | 2006-07-14 | 2010-09-22 | 信越半导体股份有限公司 | 剥离晶片的再利用方法 |
CN101901754A (zh) * | 2010-06-25 | 2010-12-01 | 上海新傲科技股份有限公司 | 一种在绝缘层中嵌入纳米晶的半导体材料制备方法 |
CN101908472A (zh) * | 2010-06-25 | 2010-12-08 | 上海新傲科技股份有限公司 | 在绝缘层中嵌入纳米晶的半导体材料制备方法 |
CN102456646A (zh) * | 2010-10-28 | 2012-05-16 | 三星电子株式会社 | 具有埋置布线的基底结构及其制造方法 |
CN107146758A (zh) * | 2016-12-27 | 2017-09-08 | 上海新傲科技股份有限公司 | 带有载流子俘获中心的衬底的制备方法 |
Families Citing this family (61)
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FR2748851B1 (fr) * | 1996-05-15 | 1998-08-07 | Commissariat Energie Atomique | Procede de realisation d'une couche mince de materiau semiconducteur |
FR2773261B1 (fr) | 1997-12-30 | 2000-01-28 | Commissariat Energie Atomique | Procede pour le transfert d'un film mince comportant une etape de creation d'inclusions |
TW484184B (en) * | 1998-11-06 | 2002-04-21 | Canon Kk | Sample separating apparatus and method, and substrate manufacturing method |
FR2823373B1 (fr) * | 2001-04-10 | 2005-02-04 | Soitec Silicon On Insulator | Dispositif de coupe de couche d'un substrat, et procede associe |
KR100511656B1 (ko) * | 2002-08-10 | 2005-09-07 | 주식회사 실트론 | 나노 에스오아이 웨이퍼의 제조방법 및 그에 따라 제조된나노 에스오아이 웨이퍼 |
KR20040044628A (ko) * | 2002-11-21 | 2004-05-31 | 주식회사 실트론 | Soi 웨이퍼의 soi층 두께 제어 방법 |
JP4407127B2 (ja) * | 2003-01-10 | 2010-02-03 | 信越半導体株式会社 | Soiウエーハの製造方法 |
JP4509488B2 (ja) * | 2003-04-02 | 2010-07-21 | 株式会社Sumco | 貼り合わせ基板の製造方法 |
US7592239B2 (en) | 2003-04-30 | 2009-09-22 | Industry University Cooperation Foundation-Hanyang University | Flexible single-crystal film and method of manufacturing the same |
US20040218133A1 (en) * | 2003-04-30 | 2004-11-04 | Park Jong-Wan | Flexible electro-optical apparatus and method for manufacturing the same |
WO2005024916A1 (ja) * | 2003-09-05 | 2005-03-17 | Sumco Corporation | Soiウェーハの作製方法 |
JP4285244B2 (ja) * | 2004-01-08 | 2009-06-24 | 株式会社Sumco | Soiウェーハの作製方法 |
KR100691310B1 (ko) * | 2004-04-06 | 2007-03-12 | 박재근 | 유기 el 디스플레이 및 그 제조 방법 |
WO2005106933A1 (en) * | 2004-04-28 | 2005-11-10 | Iufc-Hyu | Flexible single-crystal film and method of manufacturing the same |
US7692179B2 (en) * | 2004-07-09 | 2010-04-06 | Hewlett-Packard Development Company, L.P. | Nanowire device with (111) vertical sidewalls and method of fabrication |
JP4617820B2 (ja) * | 2004-10-20 | 2011-01-26 | 信越半導体株式会社 | 半導体ウェーハの製造方法 |
FR2889887B1 (fr) * | 2005-08-16 | 2007-11-09 | Commissariat Energie Atomique | Procede de report d'une couche mince sur un support |
FR2891281B1 (fr) | 2005-09-28 | 2007-12-28 | Commissariat Energie Atomique | Procede de fabrication d'un element en couches minces. |
KR100738460B1 (ko) * | 2005-12-23 | 2007-07-11 | 주식회사 실트론 | 나노 에스오아이 웨이퍼의 제조방법 |
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US7790565B2 (en) * | 2006-04-21 | 2010-09-07 | Corning Incorporated | Semiconductor on glass insulator made using improved thinning process |
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JP3358550B2 (ja) * | 1998-07-07 | 2002-12-24 | 信越半導体株式会社 | Soiウエーハの製造方法ならびにこの方法で製造されるsoiウエーハ |
US6214750B1 (en) * | 1999-01-04 | 2001-04-10 | Industrial Technology Research Institute | Alternative structure to SOI using proton beams |
US6287941B1 (en) * | 1999-04-21 | 2001-09-11 | Silicon Genesis Corporation | Surface finishing of SOI substrates using an EPI process |
US6323108B1 (en) * | 1999-07-27 | 2001-11-27 | The United States Of America As Represented By The Secretary Of The Navy | Fabrication ultra-thin bonded semiconductor layers |
JP4633874B2 (ja) * | 1999-09-21 | 2011-02-16 | Sumco Techxiv株式会社 | 貼り合せsoiウェーハの接合装置 |
JP2001168308A (ja) * | 1999-09-30 | 2001-06-22 | Canon Inc | シリコン薄膜の製造方法、soi基板の作製方法及び半導体装置 |
US6166411A (en) * | 1999-10-25 | 2000-12-26 | Advanced Micro Devices, Inc. | Heat removal from SOI devices by using metal substrates |
KR100549257B1 (ko) * | 1999-12-08 | 2006-02-03 | 주식회사 실트론 | 에스오아이 웨이퍼의 표면 정밀 가공 방법 |
US6566233B2 (en) * | 1999-12-24 | 2003-05-20 | Shin-Etsu Handotai Co., Ltd. | Method for manufacturing bonded wafer |
FR2812764B1 (fr) * | 2000-08-02 | 2003-01-24 | St Microelectronics Sa | Procede de fabrication d'un substrat de type substrat-sur- isolant ou substrat-sur-vide et dispositif obtenu |
US6524935B1 (en) * | 2000-09-29 | 2003-02-25 | International Business Machines Corporation | Preparation of strained Si/SiGe on insulator by hydrogen induced layer transfer technique |
JP2002164520A (ja) * | 2000-11-27 | 2002-06-07 | Shin Etsu Handotai Co Ltd | 半導体ウェーハの製造方法 |
US6649935B2 (en) * | 2001-02-28 | 2003-11-18 | International Business Machines Corporation | Self-aligned, planarized thin-film transistors, devices employing the same |
KR100511656B1 (ko) * | 2002-08-10 | 2005-09-07 | 주식회사 실트론 | 나노 에스오아이 웨이퍼의 제조방법 및 그에 따라 제조된나노 에스오아이 웨이퍼 |
-
2002
- 2002-08-10 KR KR10-2002-0047351A patent/KR100511656B1/ko active IP Right Grant
-
2003
- 2003-03-19 US US10/391,297 patent/US6884694B2/en not_active Expired - Lifetime
- 2003-08-06 CN CNB031275508A patent/CN100389477C/zh not_active Expired - Lifetime
- 2003-08-11 JP JP2003291700A patent/JP2004080035A/ja active Pending
-
2005
- 2005-03-21 US US11/084,033 patent/US7338882B2/en not_active Expired - Lifetime
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2009
- 2009-04-20 JP JP2009102446A patent/JP2009164643A/ja active Pending
Cited By (10)
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CN1312328C (zh) * | 2005-05-16 | 2007-04-25 | 浙江大学 | 用于纳米光子技术的单晶硅纳米膜的制备方法 |
CN100369188C (zh) * | 2005-05-16 | 2008-02-13 | 中国科学院半导体研究所 | 镜像电荷效应量子元胞自动机的制作方法 |
CN101490806B (zh) * | 2006-07-14 | 2010-09-22 | 信越半导体股份有限公司 | 剥离晶片的再利用方法 |
CN101901754A (zh) * | 2010-06-25 | 2010-12-01 | 上海新傲科技股份有限公司 | 一种在绝缘层中嵌入纳米晶的半导体材料制备方法 |
CN101908472A (zh) * | 2010-06-25 | 2010-12-08 | 上海新傲科技股份有限公司 | 在绝缘层中嵌入纳米晶的半导体材料制备方法 |
CN101901754B (zh) * | 2010-06-25 | 2012-08-08 | 上海新傲科技股份有限公司 | 一种在绝缘层中嵌入纳米晶的半导体材料制备方法 |
CN101908472B (zh) * | 2010-06-25 | 2015-10-14 | 上海新傲科技股份有限公司 | 在绝缘层中嵌入纳米晶的半导体材料制备方法 |
CN102456646A (zh) * | 2010-10-28 | 2012-05-16 | 三星电子株式会社 | 具有埋置布线的基底结构及其制造方法 |
CN107146758A (zh) * | 2016-12-27 | 2017-09-08 | 上海新傲科技股份有限公司 | 带有载流子俘获中心的衬底的制备方法 |
CN107146758B (zh) * | 2016-12-27 | 2019-12-13 | 上海新傲科技股份有限公司 | 带有载流子俘获中心的衬底的制备方法 |
Also Published As
Publication number | Publication date |
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JP2004080035A (ja) | 2004-03-11 |
US7338882B2 (en) | 2008-03-04 |
KR20040014719A (ko) | 2004-02-18 |
US20040029358A1 (en) | 2004-02-12 |
US20050164435A1 (en) | 2005-07-28 |
CN100389477C (zh) | 2008-05-21 |
KR100511656B1 (ko) | 2005-09-07 |
JP2009164643A (ja) | 2009-07-23 |
US6884694B2 (en) | 2005-04-26 |
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