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CN1460294A - Led灯 - Google Patents

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CN1460294A
CN1460294A CN 01811113 CN01811113A CN1460294A CN 1460294 A CN1460294 A CN 1460294A CN 01811113 CN01811113 CN 01811113 CN 01811113 A CN01811113 A CN 01811113A CN 1460294 A CN1460294 A CN 1460294A
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CN 01811113
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巴鲁·杰格纳桑
约汉·阿尔伯特·蒙塔格纳
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塞斯特马科斯股份有限公司
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S362/00Illumination
    • Y10S362/80Light emitting diode

Abstract

一种包括多个半导体发光结的灯,这些发光结具有在其上面设置的一荧光材料共有层。本发明提供一种包括多个发光结的灯,这些发光结安装在至少一个曲面导体上,以便采用三维排列。

Description

LED灯

技术领域

本发明涉及一种LED灯。

发明背景美国专利US5998925公开了一种发光器件,其包括嵌入一透明球体内的一半导体发光层。一种荧光材料覆盖该半导体层,接收在不同波长下传输即具有预定颜色的发射光。

为了提高光输出的强度,可以增加额外的半导体器件,像美国专利US5289082中所示出的,其中公开一种在半透明体中安装有多个半导体片(chip)的LED灯。每个片都发出一种离散光图案,但是,如果期望来自该灯的光具有从单个点状光源发出的外观(appearance)则是不合需要的。在US5289082中,该离散光输出被专门的成形体组合和聚焦,以产生具有所需光照图案的总光输出。

GB2311126公开一种比较大尺寸的光源,其包括一列阵分开安装的发光二极管,这些发光二极管看起来具有与平面导体硬连线的各个引线。这些二极管被一透镜封装,该透镜用于将来自该阵列的光聚焦。

发明目的本发明试图提供一种替代形式的LED灯,其利用多个发光二极管能够提供高强度的输出,同时保持基本上是点光源照明的外观。

发明概要依照本发明,提供一种包括多个半导体发光结的灯,具有一荧光材料共有层设置在这些发光结的上面。

该荧光材料共有层可用来接收来自相邻结的光,并以分布的方式来将其传输,使得对于肉眼,合成的光看起来是从一单个照明点光源发出的。此外,该共有层可在单个的步骤中施加在这些结上面,与US5289082离散片的形成相比,反过来又使构造该灯的过程大大简化,US5289082中离散片需要采用额外的掩模和蚀刻步骤来单个地构造或生产。

优选的是,该灯包括一球部,并且这些结被嵌入该球部内使得该灯作为单一结构来形成。

优选的是,这些结被以三维排列来配置。

优选的是,这些结安装在一曲面支撑结构上,以便被大体设置在一假想球面上。

优选的是,这些结被安装在至少一个曲面导体上并且电学耦合在该至少一个曲面导体上。

按照另一广泛的方面,本发明提供一种包括多个发光结的灯,这些发光结安装在至少一个曲面导体上以便采用三维排列。

优选的是,该至少一个曲面导体被成形使得这些结被大体设置在一假想球面上。

优选的是,该灯包括在至少相邻结之上的一荧光材料共有层。

该导体的曲面构形尤其是这些结被设置在大体球形假想球面上可提供一个优点,即由该灯所产生的整个光看起来是来自一通常单个的小球面源或点源。

优选的是,该至少一个曲面导体包括一凹口,用来容纳这些结中各自的一个。

优选的是,该凹口具有侧壁,该侧壁起着光波导的作用,用来控制光传输的方向和/或发散的角度。

优选的是,该灯包括一球部,这些结和至少一个曲面导体被嵌入该球部内,使得该灯作为单一结构来形成。

优选的是,该灯包括一适宜配置该球部的透镜,并且该透镜被配置来将发自球部的光成形为预定的图案。

附图的简要说明本发明将参考附图更加详细地描述,其中:图1是一种LED灯的侧视图;图2是图1中灯的平面视图;

图3是用于图1和2中灯的电路图;图4是第二种LED灯的示意横截面图;图5是图4灯的电路图;图6是图4灯的横截面图;图7是图4灯的平面图;图8是图4至7中灯的照明图案的显示;图9是第三种灯的平面图;图10是用于图9灯的电路图;图11是图9灯的前视图;图12是图9灯的侧视图;图13是用于安装在图9灯上的一透镜的侧视图;图14是沿图9中X-X线所取的横截面图;图15是沿图10中Y-Y线所取的横截面图;图16是由图9至12灯产生的照明图案的显示。

优选实施例的详细描述如图1中所示,灯1包括一个具有圆柱形底部3和抛物线端4的球部2,被成形以提高沿灯轴向的照明输出。该灯还包括第一和第二端子,优选的是采用嵌入球部2中导体5、6的形式。引线5具有一支撑平台7,一集成电路晶片8安装在该支撑平台7上。在该给出的实例中,晶片包括两个基本上彼此紧邻设置的结,使得一荧光材料共有层像磷层可涂覆在两个结上。中间导体9至12将该两个结电学耦合在各自的端子5、6上,使得LED结14、15被以反极性设置,如电路图3中所示。一个阻抗元件16设置在另外的导体13(连接中间导体11和12)和引线5之间。

导体5和6、中间导体9至13和晶片8全都嵌入球部2内,以使灯呈现出稳固单一的结构。与传统LED装置的情形相比,结的反极性允许灯连在电源上而不用考虑极性。每个结所共有的单磷层的使用也简化了制造,并且因为从任一个结发出的光都感觉是从一个单光源发出的,故又提供了一种美学的优点。

按照LED灯的优选形式,应用下述的规格:公称尺寸           -9.5mm直径发光颜色           -白色球体颜色           -明光强度             -超亮一般光输出>500mCd@20mA保用期             -30,000小时聚焦               -半角15°typ.

底部类型           -可与楔型灯互换引线尺寸           -底楔外6mm公称电源电压           -12伏特公称{>11.5<14伏特AC或DC}正向电流           -20+8/-3mA@12伏特正向电压           -3.6min(typ)4.0max.@20mA反向电压           -5伏特min.

功率消耗           -LED结120Mw电阻器170mW反向电流           -50×10-3mA max.@5V内阻               -430欧姆,公称但是,应当理解,该灯任何部分的尺寸配置和工作参数随所需都可变化,并且LED结的数目也可增加以满足照明需要。

现在参看图4至8描述第二种灯20。就配置有第一端子21和第二端子22,且该第一端子21和第二端子22采用导体23、24的形式与额外的导体26、27一起嵌入球部25中而言,该灯20在结构上总体类似于图1至3的灯。每个导体23、26和27都具有各自的凹口28,成形为支撑的结构以容纳由参考标记29、30、31指示的相关联结。这些结被一磷共有层35覆盖,并通过中间导体32、33、34被电学耦合在安装有结的各个导体23、26、27和相邻的导体间。在所示的实例中,这些结被如图5电路图所示被串联地连接。

所有的导体23、24、26、27优选的被形成在图6所示的二维引线框架结构40内,以在施加磷层35之后提供制造的简易性和直接将结29、30、31定位在球部25内的可靠性。正如从图6和7中可以看出的,结29、30、31一般被设置成线性阵列,且导体23、27突出在导体26之上,从而由这些结产生的整个照明如图8中曲线A所示沿轴线被些微增强。

灯20也可配置有一个透镜41,该透镜41安装在球部25上并被成形使得调节由该灯产生的光,以产生例如图8中由曲线B所示的照明图,借此,输出照明被稍微更加均匀的分布。

现在参看图9至16。示出第三种灯50。再一次地,就多个导体51、52、53和54嵌入单一球部55内并且具有安装在各个凹口57内并被一磷材料共有层59覆盖的发光结56而言,该灯50总体上类似于先前的灯结构。每个结被再次通过中间导体58电学耦合在安装有该结的各个导体和相邻的导体间,从而形成图10中所示的电路。但是,在这种情况下,导体51至54的每一个都带有三个结56。

导体51至54在球部55内弯曲,以便支撑假想(imaginary)曲面如球体上的结,这样,由灯50产生的照明就具有从小、通常是球形点光源发出的外观。透镜60也可被设置来调节结的输出以产生更加均匀的分布图,如图16中由曲线C所示,是从灯50的平面图观察到的照明输出,即,当从如图9中观察相同的方向来看时。

除了使用透镜60来调节光输出,也可将导体设置成任何所需的结构,并且凹口57的构造也可用来辅助控制从各个结发出的光的输出方向。特别是,每个凹口的结构都可使得例如凹口侧壁充当光波导的作用来控制从每个结发出光发射的方向和/或角度。

更具体的讲,现在将参看图14和15来更加详细的描述每个凹口的形状及其对来自结光输出的影响,图14和15示出分别取自沿图11和12中所示X-X线和Y-Y线的相应导体的横截面图。

包含LED结的凹口57被定位且成形在导体51、52、53内,使得从凹口出现的光束在灯50外部的自由空间内可被组合成预测的图案,该图案由标明“R”的假想球面来决定,该“R”是从凹口内LED结到凹口侧面假想延伸-标明“r”-交叉的距离,灯50的中心线61和穿过任一LED结垂线的中心线62之间的角度为“A”。

假想球面的半径“R”是从这些中心线的交点到凹口内LED结的距离。凹口侧面间的角度决定“r”的值。

在极限的情况下,其中“ r”等于或大于“R”,来自每个LED结的光将被凹口成形为不交叉的光束,而与角度“A”的值无关。对于所有“r”小于“R”的值,就可使来自每个LED结的光束与来自相邻LED结的光束的边缘相重合。在这种情况下,精确的定位将取决于比率R/r和角度“A”的值。

如从以上所理解的,本发明允许相当大的范围来获得使用结型二极管的光源,该光源具有各种输出照明图中预定的一种,同时保持总体的简单结构。一个独特的优点在于各种结都具有小的尺寸并可被成形来产生光输出,该光输出可被肉眼觉察到是从一个单点光源发出的。

上面的LED灯仅仅被非限制的实施例描述,在不脱离本发明如上文所述的精神和范围下,可以作出多种改进和改变。

Claims (12)

1.一种包括多个半导体发光结的灯,具有一荧光材料共有层设置在这些发光结的上面。
2.如权利要求1的灯,其中该灯包括一球部,并且这些结被嵌入该球部内,使得该灯被作为单一结构来形成。
3.如权利要求1或2的灯,其中这些结被以三维排列设置。
4.如权利要求1至3中任一项的灯,其中这些结被安装在一曲面支撑结构上,以便被大体设置在一假想球面上。
5.如权利要求4的灯,其中这些结被安装在至少一个曲面导体上并且与该至少一个曲面导体电学耦合。
6.一种包括多个发光结的灯,这些发光结被安装在至少一个曲面导体上,以便采用三维排列。
7.如权利要求6的灯,其中该至少一个曲面导体被成形使得这些结被大体设置在一假想球面上。
8.如权利要求6或7的灯,其中该灯包括在至少相邻结上的一荧光材料共有层。
9.如权利要求6至8中任一项的灯,其中该至少一个曲面导体包括一凹口,用于容纳这些结中各自的一个。
10.如权利要求9的灯,其中该凹口具有侧壁,该侧壁起着光波导的作用,用来控制光传输的方向和/或发散的角度。
11.如权利要求6至10中任一项的灯,其中该灯包括一球部,该球部带有这些结,并且该至少一个曲面导体被嵌入该球部内,使得该灯被以单一结构来形成。
12.如权利要求11的灯,其中该灯包括一适宜配备该球部的透镜,并且该透镜被配置来将发自该球部的光成形为预定的图案。
CN 01811113 2000-06-15 2001-06-15 Led灯 CN1460294A (zh)

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CN101208813B (zh) 2005-06-28 2010-05-19 首尔Opto仪器股份有限公司 用于交流电力操作的发光装置
CN101578714B (zh) 2007-08-03 2011-02-09 松下电器产业株式会社 发光装置
US8188687B2 (en) 2005-06-28 2012-05-29 Seoul Opto Device Co., Ltd. Light emitting device for AC power operation
DE102012207460A1 (de) 2011-05-05 2012-11-08 ledboss UG (haftungsbeschränkt) LED-Reflektionsregulierungsleuchte
US8896216B2 (en) 2005-06-28 2014-11-25 Seoul Viosys Co., Ltd. Illumination system

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US6809475B2 (en) 2004-10-26 grant
JP2004503120A (ja) 2004-01-29 application
US20020145384A1 (en) 2002-10-10 application
EP1297572B1 (en) 2011-07-27 grant
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US20050104515A1 (en) 2005-05-19 application
US7352127B2 (en) 2008-04-01 grant

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