CN1420386A - Plane switch mode active matrix liquid crystal display device and mfg. method thereof - Google Patents
Plane switch mode active matrix liquid crystal display device and mfg. method thereof Download PDFInfo
- Publication number
- CN1420386A CN1420386A CN 02148009 CN02148009A CN1420386A CN 1420386 A CN1420386 A CN 1420386A CN 02148009 CN02148009 CN 02148009 CN 02148009 A CN02148009 A CN 02148009A CN 1420386 A CN1420386 A CN 1420386A
- Authority
- CN
- China
- Prior art keywords
- liquid crystal
- data line
- public electrode
- electrode
- crystal display
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 656
- 239000011159 matrix material Substances 0.000 title claims abstract description 201
- 238000000034 method Methods 0.000 title claims description 52
- 239000010410 layer Substances 0.000 claims abstract description 356
- 239000000758 substrate Substances 0.000 claims abstract description 220
- 230000005684 electric field Effects 0.000 claims abstract description 82
- 239000010409 thin film Substances 0.000 claims abstract description 35
- 239000012780 transparent material Substances 0.000 claims abstract description 26
- 239000010408 film Substances 0.000 claims description 487
- 239000011229 interlayer Substances 0.000 claims description 185
- 229910052751 metal Inorganic materials 0.000 claims description 136
- 239000002184 metal Substances 0.000 claims description 136
- 239000012528 membrane Substances 0.000 claims description 87
- 230000015572 biosynthetic process Effects 0.000 claims description 37
- 238000010276 construction Methods 0.000 claims description 29
- 238000002955 isolation Methods 0.000 claims description 29
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 27
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 27
- 229910052804 chromium Inorganic materials 0.000 claims description 27
- 239000011651 chromium Substances 0.000 claims description 27
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 24
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 24
- 230000002441 reversible effect Effects 0.000 claims description 20
- 238000007667 floating Methods 0.000 claims description 16
- 238000005530 etching Methods 0.000 claims description 14
- 239000004925 Acrylic resin Substances 0.000 claims description 12
- 238000009413 insulation Methods 0.000 claims description 12
- 229920000178 Acrylic resin Polymers 0.000 claims description 11
- 229920001709 polysilazane Polymers 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 230000001154 acute effect Effects 0.000 claims description 9
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 claims description 7
- 229920001721 polyimide Polymers 0.000 claims description 7
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 230000002093 peripheral effect Effects 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 229920006268 silicone film Polymers 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 3
- 230000008878 coupling Effects 0.000 claims description 2
- 238000010168 coupling process Methods 0.000 claims description 2
- 238000005859 coupling reaction Methods 0.000 claims description 2
- 238000003475 lamination Methods 0.000 claims description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 59
- 238000001259 photo etching Methods 0.000 description 23
- 238000005452 bending Methods 0.000 description 19
- 230000010287 polarization Effects 0.000 description 14
- 230000005540 biological transmission Effects 0.000 description 12
- 235000012239 silicon dioxide Nutrition 0.000 description 11
- 239000000377 silicon dioxide Substances 0.000 description 11
- 230000001939 inductive effect Effects 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 9
- 239000011521 glass Substances 0.000 description 8
- 210000003141 lower extremity Anatomy 0.000 description 8
- 238000004891 communication Methods 0.000 description 7
- 238000013461 design Methods 0.000 description 7
- 238000004528 spin coating Methods 0.000 description 7
- 230000008901 benefit Effects 0.000 description 6
- 238000010828 elution Methods 0.000 description 6
- 230000001965 increasing effect Effects 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 5
- 229910010272 inorganic material Inorganic materials 0.000 description 5
- 239000011147 inorganic material Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 239000011368 organic material Substances 0.000 description 5
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 238000004364 calculation method Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000003487 electrochemical reaction Methods 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 150000001455 metallic ions Chemical class 0.000 description 4
- 239000009719 polyimide resin Substances 0.000 description 4
- 230000000007 visual effect Effects 0.000 description 4
- 238000013459 approach Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000002950 deficient Effects 0.000 description 3
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 230000006641 stabilisation Effects 0.000 description 3
- 238000011105 stabilization Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005685 electric field effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 230000000087 stabilizing effect Effects 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N Acrylic acid Chemical compound OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 241000233855 Orchidaceae Species 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000000386 athletic effect Effects 0.000 description 1
- VIRZZYBEAHUHST-UHFFFAOYSA-N bicyclo[4.2.0]octa-1,3,5-triene Chemical compound C1CC=2C1=CC=CC2.C2CC=1C2=CC=CC1 VIRZZYBEAHUHST-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007850 degeneration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 210000003127 knee Anatomy 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 230000024241 parasitism Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
Images
Abstract
An in-plane switching mode active matrix type liquid crystal display device includes a first substrate, a second substrate located opposing the first substrate, and a liquid crystal layer sandwiched between the first and second substrates. The first substrate includes a thin film transistor, a pixel electrode each associated to a pixel to be driven, a common electrode to which a reference voltage is applied, data lines, a scanning line, and common electrode lines. Molecular axes of liquid crystal are rotated in a plane parallel with the first substrate by an electric field substantially parallel with a plane of the first substrate to thereby display certain images. The common electrode is composed of transparent material, and are formed on a layer located closer to the liquid crystal layer than the data lines. The common electrode entirely overlaps the data lines except an area where the data lines are located in the vicinity of the scanning line. The liquid crystal display device further includes a light-impermeable layer in an area where the common electrode entirely overlaps the data lines. The light-impermeable layer is comprised of a black matrix layer having a width smaller than a width of the common electrode.
Description
TECHNICAL FIELD OF THE INVENTION
The present invention relates to liquid crystal display device and its manufacture method, particularly relate to a kind of plane switch mode active matrix liquid crystal display device and manufacture method thereof.
Background of invention
Liquid crystal display device can be divided into two major types, and one of them is that the molecular axis of the liquid crystal molecule after the orientation rotates on the plane perpendicular to substrate, so that show certain image; Another kind of type is that the molecular axis of the liquid crystal molecule after the orientation rotates being parallel on the plane of substrate, so that show certain image.
Mode standard in the last type is the liquid crystal display device of twisted-nematic (TN) pattern, and back one type is known as XY switch (IPS) mode liquid crystal display device.
Because the onlooker just watches from the direction that the minor axis along liquid crystal molecule extends, even his moving view point, in the liquid crystal display device of IPS pattern, how liquid crystal molecule is arranged does not depend on the visual angle, therefore, the IPS liquid crystal display device can represent the visual angle wideer than the liquid crystal display device of TN pattern for the onlooker.
Therefore the IPS mode liquid crystal display device is more popular than TN pattern device now.
For example, Japanese laid-open patent publication number 07-036058 has just proposed the example of an IPS mode liquid crystal display device.Attempt to provide a kind of have more the IPS mode liquid crystal display device of high opening rate, for example Japanese laid-open patent publication number 11-119237,10-186407,9-236820 and 6-202127 etc. at this.
The characteristics of the IPS liquid crystal display device of Japanese laid-open patent publication number 11-119237 suggestion are, their drive electrode (being equivalent to the pixel electrode among the present invention) and opposite electrode (being equivalent to the public electrode among the present invention) form on an aspect, it is different from the aspect that forms signal wire, and its position is more near liquid crystal layer.This structure can guarantee opposite electrode be subjected to by signal wire and be formed on openend and and the opposite electrode that adjoins of signal wire between the electric field effects that produces of voltage difference very little, therefore opposite electrode might be arranged on the more position of approach signal line opposite electrode.As a result, might increase aperture area.
Japanese laid-open patent publication number 11-119237 advises that further drive electrode and opposite electrode can be made by transparent material, for example ITO etc.Yet do not disclose the overlapping problem of opposite electrode and signal wire.
Japanese laid-open patent publication number 11-119237 is the liquid crystal display device of a kind of IPS pattern of suggestion further, and wherein drive electrode and opposite electrode are formed on the aspect on the aspect that forms signal wire, and opposite electrode and signal wire are overlapping.This structure can guarantee that drive electrode and opposite electrode seldom are subjected to the electric field effects of revealing from signal wire, reveal the slit that light also can not form between signal wire and opposite electrode.
Yet it does not advise that drive electrode and opposite electrode are transparency electrodes, because opposite electrode need be overlapping with signal wire, so that play the purpose of blocking-up slit exposure.
In the IPS mode liquid crystal display device that Japanese laid-open patent publication number 10-186407 discloses, between the data line layer of common electrode layer that forms public electrode and formation data line, formed an electric insulation layer, and liquid crystal layer is more approached than data line layer in the position of common electrode layer.Public electrode is overlapping with the specific region of data line on a specific zone.Public electrode is complete and data line is overlapping, prevent the leakage of electric field, and public electrode is partly overlapping with data line, can guarantee to reduce the stray capacitance that forms between data line and public electrode.
Yet Japanese laid-open patent publication number 10-186407 does not disclose and advises comprising the public electrode of transparent material.
In the IPS mode liquid crystal display device that Japanese laid-open patent publication number 9-236820 discloses, each opposite electrode all is made up of the thin-belt electrode that is parallel to source bus (being equivalent to data line of the present invention), is transferred to pixel electrode by its picture element signal.Opposite electrode and source bus pile up each other by being clipped in their middle transparent insulating layer.Be positioned at identical position on opposite electrode and the direction of source bus with respect to light penetrating LCD device spare.
According to the description of Japanese laid-open patent publication number 9-236820, if opposite electrode and pixel electrode are made by transparent material, might increase the percentage of open area of pixel.Yet the patent of the disclosure further describes, because transparent material has high impedance, will produce voltage difference, has disturbed the drive electrode display image, and transparency electrode is very expensive.
The IPS mode liquid crystal display device that Japanese laid-open patent publication number 6-202127 discloses has designed a driver of being made up of active device, its feature is to be coated over one in the face of on the zone of liquid crystal layer for the signal wire of active device image signal transmission, wherein electric conductor and electrical insulator mutual superposition.
Yet the patent of the disclosure does not disclose and the suggestion signal wire is shielded by transparency electrode.
The characteristics of the IPS mode liquid crystal display device that Japanese laid-open patent publication number 10-307295 discloses are that a plurality of subareas are used for the compensate for color image.For example, the patent of the disclosure has been advised a kind of method that can prevent the image variable color, be included in and produce the step that possesses the different directions electric field in first and second subareas, therefore can in first and second subareas, liquid crystal molecule be rotated with different directions, guaranteed that when the onlooker looks side ways liquid crystal display device the optical characteristics in first and second subareas can be compensated mutually.
The purpose of the IPS mode liquid crystal display device that discloses in the above-mentioned publication is to increase percentage of open area, the brightness that improves display image.
Because between data line and opposite electrode or public electrode, exist voltage difference, so because this voltage difference can produce electric field.If this electric field touches the viewing area that is subjected to this electric field influence between pixel electrode and public electrode, the orientation in the liquid crystal molecule will be interfered.For example, when one of demonstration has the white window of black background on screen, can cause a kind of problem, be called vertical crosstalk, should show that wherein the pixel of black combines with the data line that drives the pixel display white, can demonstrate grey.
For fear of vertical cross talk problems, need to adopt public electrode to stop electric field, this public electrode has certain width that stretches out at the opposed edge place of data line, so that shield the electric field relevant with data line, perhaps use its voltage can not influence the electrode cover data line of image, for example public electrode.
In order to increase percentage of open area, preferably should use public electrode cover data line, for example the latter mentions.
Yet the conventional liquid crystal display device of above-mentioned disclosed patent suggestion is accompanied by can not shield fully and reduce by use and comprises the influence that the minimizing of the light that public electrode caused of light-proof material produces.
The purpose of the conventional liquid crystal display device of above-mentioned disclosed patent suggestion is to improve percentage of open area, yet still needs further to improve percentage of open area.
Summary of the invention
In view of the problems referred to above that exist in the conventional liquid crystal display device, the purpose of this invention is to provide a kind of XY switch (IPS) mode liquid crystal display device, it can solve vertical cross talk problems, improves percentage of open area simultaneously.
Particularly compare with above-mentioned conventional liquid crystal display device, first purpose of the present invention provides the liquid crystal display device of IPS pattern, and it can prevent the generation of vertical crosstalk, and can not reduce percentage of open area.
In order to realize above-mentioned first purpose, according to the present invention, data line is designed to transparent common electrode overlapping, is used for shielding the electric field of revealing from the data line of IPS liquid crystal display device.Yet this structure still is accompanied by such problem, as above-mentioned Japanese laid-open patent publication number 9-236820 point out because the high impedance of transparent material may produce voltage difference, thereby prevent that electrode normally is subjected to drive with display image.Therefore, second purpose of the present invention provides a kind of IPS mode liquid crystal display device, and its public electrode and data line of being made up of transparency electrode is overlapping, and public electrode can have the impedance of reduction.
In order to realize second purpose, be electrically connected with public electrode wire with the contact hole of the overlapping transparency electrode of data line by each pixel.
Even above-mentioned purpose is achieved, the reduction problem of percentage of open area still is not resolved.Therefore, the 3rd purpose of the present invention provides a kind of IPS mode liquid crystal display device, it can omit lighttight film, such as, in conventional IPS mode liquid crystal display device, often use, be used to prevent from display image, to occur because the black basilar memebrane that the vertical crosstalk that the electric field leakage causes is provided with.
In order to realize above-mentioned the 3rd purpose, according to IPS mode liquid crystal display device of the present invention, when observing with planar fashion, in the face of the black basalis of data line be designed to have width less than with the width of the overlapping public electrode of data line, and the public electrode that light tight film is designed to not to be formed on and data line is overlapping and adjoining between the pixel electrode of public electrode.
Pointed as above-mentioned Japanese laid-open patent publication number 9-236820, there is a problem here, promptly transparent electrode is very expensive.Therefore, the 4th purpose of the present invention provides a kind of IPS mode liquid crystal display device, and transparency electrode wherein can low-cost production.
In order to realize the 4th purpose, transparency electrode is made up of ITO, is making ito transparent electrode, is having a step that can not increase the making transparency electrode in the process of the terminal of being made up of ITO simultaneously.
Pointed as above-mentioned Japanese laid-open patent publication number 10-186407, if public electrode is complete and data line is overlapping, then the problem that stray capacitance increases between data line and the conventional electrodes still is not resolved.Therefore, the 5th purpose of the present invention provides a kind of IPS mode liquid crystal display device, and its data line is almost overlapping fully with public electrode, and can not increase stray capacitance between data line and public electrode.
In order to realize the 5th purpose, the public electrode of being made up of ITO is formed on the data line more in the layer near liquid crystal layer that is sandwiched in interlayer insulating film therebetween than having, and this interlayer insulating film is to be made by the organic material with low-k.
Though above-mentioned publication is not pointed out this point, if the public electrode of shadow data line is designed to be made by ordinary metallic material rather than ITO, then compare with the liquid crystal display device that has the public electrode of being made up of ITO, the reliability of final liquid crystal display device is low.So the 6th purpose of the present invention provides the liquid crystal display device of IPS pattern, its data line uses more reliable transparent material shielding.
According to an aspect of the present invention, a kind of plane switch mode active matrix liquid crystal display device is provided, comprise (a) first substrate, (b) and opposed second substrate of first substrate and (c) be clipped in liquid crystal layer between first and second substrates, wherein first substrate comprises that (a1) has the pixel electrode that the thin film transistor (TFT) of grid, drain electrode and source electrode (a2) is associated with the pixel that will drive, (a3) apply the public electrode of reference voltage to it, (a4) data line, (a5) sweep trace and (a6) public electrode wire; Its grid is electrically connected with sweep trace, drain electrode is electrically connected with data line, source electrode is electrically connected with pixel electrode, and public electrode is electrically connected with public electrode wire, by basically and the plane parallel of first substrate and be applied to pixel electrode and public electrode between electric field, liquid crystal molecule axle in the liquid crystal layer rotates along the plane parallel with first substrate, thereby shows certain image.Public electrode is made up of transparent material, and is formed on than data line and more approaches on the aspect of liquid crystal layer, and near the zone of the data line being positioned at sweep trace, public electrode is overlapping fully with the data line that accompanies insulation course therebetween.This plane switch mode active matrix liquid crystal display device further comprises at public electrode fully and the light non-transmittable layers in the data line overlapping areas, this light non-transmittable layers is formed on second substrate or on first substrate, so that make this light non-transmittable layers be positioned at than data line more near the position of liquid crystal layer, and in the face of data line, this light non-transmittable layers is by black basalis or by having than forming with the little multi layer colour layer of the width of the overlapping public electrode of data line.
Above-mentioned plane switch mode active matrix liquid crystal display device has been realized above-mentioned first to the 3rd target.Particularly, this plane switch mode active matrix liquid crystal display device can, (a) prevent vertical crosstalk, and can not reduce percentage of open area, (b) transparency electrode that is electrically connected with public electrode and data line are overlapping, and public electrode can possess Low ESR, (c) can omit light tight film, for example in conventional IPS mode liquid crystal display device, use, be used to prevent because electric field due to revealing at display image the time vertical crosstalk that occurs black basilar memebrane.
The following describes the liquid crystal display device of above-mentioned plane switch mode active matrix type why and can realize the reason of first to the 3rd target.
Fig. 1 is the fragmentary cross-sectional view of above-mentioned conventional liquid crystal display device 10A.For the purpose of simplifying the description, Fig. 1 only shows the part required content.
Liquid crystal display device 10A comprise active device substrate 11A, counter substrate 12A and be clipped in active base plate 11A and counter substrate 12A between liquid crystal layer 13A.
Active device substrate 11A comprises: be formed on public electrode 26A on the glass substrate (not shown), the interlayer insulating film 25A that forms on the glass substrate cover public electrode 26A, the data line 24A that forms on the interlayer insulating film 25A, the pixel electrode 27A that forms on the interlayer insulating film 25A, cover data line 24A and pixel electrode 27A, at passivating film 37A that forms on the interlayer insulating film 25A and the oriented film 31A that on passivating film 37A, forms.
In liquid crystal display device 10A shown in Figure 1, near the public electrode 26A that forms data line 24A must do enough widely, so that absorb the electric field of revealing at this from data line 24A.Because public electrode 26A is made up of the opaque material that constitutes gate line, so inevitably, limit the right (straight flange of the zone of opening OP from public electrode 26A?) extend internally.
In addition, for black basalis 17A, also need to do widelyer, so that the light S that blocking-up is revealed from the slit between data line 24A and the public electrode 26A than the width of complete cover data line 24A.
For example, consider at active device substrate 11A and play alignment error between the counter substrate 12A of color filter effect, the black basalis 17A among the liquid crystal display device 10A is designed to and can extends 8 μ m or bigger width than the slit between data line 24A and the public electrode 26A.
As mentioned above, it is very difficult increasing percentage of open area in conventional liquid crystal display device 10A, because liquid crystal display device 10A can only have a limited zone as opening OP, so need allow black basalis 17A extend outside the above-mentioned slit.
Fig. 2 is the fragmentary cross-sectional view of a liquid crystal display device that designs according to the present invention.Similar with Fig. 1, Fig. 2 purpose for the purpose of simplifying the description only shows the part that needs explanation.
Liquid crystal display device 10 comprise active device substrate 11, counter substrate 12 and be clipped in active device substrate 11 and counter substrate 12 between liquid crystal layer 13.
According to liquid crystal display device 10, the public electrode 26 that the electric field of revealing from data line 24 is positioned on the data line 24 fully shields.Therefore, as shown in Figure 2, can obtain a zone that limits opening OP, is it from the right (straight flange of public electrode 26?) extend internally, make opening OP wideer than the opening OP that obtains among the conventional liquid crystal display device 10A shown in Figure 1.
That is, can have bigger percentage of open area than conventional liquid crystal display device 10A according to liquid crystal display device of the present invention.
In addition, in liquid crystal display device 10 according to the present invention,, just can prevent the light leakage effectively as long as prevent to reveal light from being positioned near black basalis 17 pixels.Therefore, no longer need black basalis 17 to have the width wideer, even under the situation of the mis-alignment of considering active device substrate 11 and counter substrate 12 than data line 24.
For example, if black basalis 17 has 6 μ m or bigger width,, just may allow and deceive basalis 17 blocking light effectively as long as data line 24 and black basalis 17 are overlapping.
Fig. 3 is a curve map, how shows electric field that simulation reveals from data line 24 and be at public electrode 26 fully and the result who obtains shielding the overlapping liquid crystal display device of data line 24.
In this simulation process, calculated the profile of current potential and the speed that light passes through the liquid crystal display device in the individual unit, suppose that each pixel is black fully, 0V voltage is applied on pixel electrode 27 and the public electrode 26, and 5V voltage is applied in the drain electrode.
As shown in Figure 3, the speed Z of the light by liquid crystal display device remains 0.This means that the electric field of revealing from data line 24 is shielded by public electrode 26 fully.
Preferably, public electrode is electrically connected by the contact hole in each pixel with public electrode wire.
By the contact hole in each pixel public electrode is electrically connected to public electrode wire, might reduces the impedance of public electrode.Consequently, can solve the problem that transparent material has high impedance.
Preferably, one of first and second substrates further comprise the color layer that bar along the line forms.
Preferably, plane switch mode active matrix liquid crystal display device further comprises: the reverse rotation in sub-pixel area stops structure, wherein all liquid crystal molecules are with identical direction rotation, thereby prevented that liquid crystal molecule is along the direction rotation opposite with this equidirectional, this reverse rotation stops structure to comprise: auxiliary electrode, at least one the voltage that will equal in pixel electrode and the public electrode imposes on this auxiliary electrode, if make that the initial orientation direction is rotated with an acute angle, then the direction of an electric field that produces in the sub-pixel area in all subareas of the initial orientation direction of liquid crystal molecule and sub-pixel area is overlapping.
Preferably, plane switch mode active matrix liquid crystal display device further is included in the interlayer insulating film that forms below with the overlapping public electrode of data line.This interlayer insulating film comprises the upper and lower, the upper strata only be formed on the overlapping public electrode of data line that part of below.
By adopting this interlayer insulating film, also just no longer need between public electrode and data line, form the interlayer insulating film that comprises very big zone, it can make public electrode almost completely overlapping with data line, and can not be increased in the stray capacitance that forms between public electrode and the data line.
Preferably, public electrode at opposite end along it laterally than data live width 1.5 μ m or bigger.
By its transverse design becomes to go out 1.5 μ m or bigger than data live width in the opposite end upper edge with public electrode, might allow maximum light to pass through in data line one side, when this is equivalent on pixel display white, the light by pixel 1/100 or littler.
Preferably the width of black basalis is narrower than the width of data line, and it is overlapping with data line on whole length.
As shown in Figure 2, if black basalis 17 width less than the width of data line 24, might use all by with the light of the expansion area of the overlapping transparent common electrode 26 of data line 24, guaranteed that light is strengthened by the speed of panel.
Preferably black basalis is formed on second substrate, and the width of facing the black basalis of data line equals 6 μ m or bigger.
If the width of black basalis is less than 6 μ m, a lot of light will be reflected on data line 24, and the screen of plane switch mode active matrix liquid crystal display device is difficult to see under the bright ring border as a result.
Preferably, black basalis and sweep trace and its on every side the zone and be clipped in sweep trace and pixel electrode between and region overlapping on every side.
Guaranteed that like this sweep trace and each zone can be by black basalis shielding light.
Preferably pixel electrode is made up of transparent material.
The pixel electrode of being made up of transparent material can further improve percentage of open area.
Preferably public electrode and pixel electrode form on common layer.
Therefore, might form public electrode and pixel electrode in a step, guarantee to improve the yield of product, that is, plane switch mode active matrix liquid crystal display device constructed in accordance need not increase making step.
Plane switch mode active matrix liquid crystal display device may further include the interlayer insulative layer that forms on the aspect below the public electrode and then, and by under interlayer insulative layer, forming the pixel auxiliary electrode that single or multiple lift constitutes, wherein the pixel auxiliary electrode preferably is electrically connected with source electrode, and the voltage that equates with the voltage of pixel electrode of maintenance.The pixel auxiliary electrode is preferably made by opaque metal.
Though the pixel auxiliary electrode of being made by opaque metal has reduced transmissivity slightly, but by pixel electrode being electrically connected each other by the pixel auxiliary electrode, can form memory capacitance up and down in pixel, thereby guarantee higher memory capacitance when display image and the quality of Geng Gao.
Preferably, the pixel auxiliary electrode be formed at least in part the layer that forms public electrode pixel electrode below, and have a lot of broach.
Because electric field vertically imposes on the liquid crystal on the transparent pixels electrode and then, so the liquid crystal standing upright consequently, is compared with the optical transmission rate that obtains in the zone between comb electrodes, the optical transmission rate reduces.Therefore, by will be positioned at by the pixel auxiliary electrode that opaque material is formed pixel electrode with transmissivity slightly more small than the transmissivity of pixel auxiliary electrode below, the pixel auxiliary electrode that is positioned at the pixel opposed edge can be electrically connected each other, and can not reduce the service efficiency of light significantly.
More preferably, plane switch mode active matrix liquid crystal display device further is included in the interlayer insulative layer that forms on the back to back aspect below the public electrode, and the pixel auxiliary electrode that under this interlayer insulative layer, forms, constitute by single or multiple lift, wherein the pixel auxiliary electrode is electrically connected with public electrode wire, and the voltage that equates with the voltage of public electrode of maintenance.This pixel auxiliary electrode is made by opaque metal.
Similar with the pixel auxiliary electrode, by public electrode is electrically connected to each other, can form memory capacitance up and down in pixel, thus higher memory capacitance when having guaranteed display image and the quality of Geng Gao.
Preferably the pixel auxiliary electrode be formed on the public electrode that has a lot of broach below.
By will be positioned at by the public auxiliary electrode that opaque material is formed pixel electrode with transmissivity slightly more small than the transmissivity of public auxiliary electrode below, the public auxiliary electrode that is positioned at the pixel opposite side may be electrically connected to each other, and that service efficiency that can light reduces is a lot, yet, if the pixel auxiliary electrode is arranged on below the public electrode, to will produce electric field between public electrode and pixel auxiliary electrode, the required horizontal component of electric field of result can not be applied on the liquid crystal.Therefore, preferably, the pixel auxiliary electrode just be arranged on pixel electrode below, and public auxiliary electrode also just be arranged on public electrode below.
Preferably scanning line terminal, data line terminal and public electrode wire terminal are all by covering with the material identical materials of forming with transparency electrode that public electrode constituted or forming.
This can guarantee that the public electrode of liquid crystal display device and terminal thereof form simultaneously, has avoided being increased in step required when making public electrode.
Plane switch mode active matrix liquid crystal display device preferably may further include: the reverse rotation in sub-pixel area stops structure, wherein all liquid crystal molecules all rotate with equidirectional, and prevent that liquid crystal molecule is with the direction rotation opposite with this equidirectional, wherein at least a portion edge of pixel auxiliary electrode and public electrode wire tilts, if the initial orientation direction is rotated with acute angle, make that the electric field that produces in the sub-pixel area in the initial orientation direction of liquid crystal molecule and all subareas in sub-pixel area is overlapping.
By preventing the molecular axis reverse rotation of liquid crystal molecule, just might realize improvement to liquid crystal display device display quality and reliability.
Preferably limit sub-pixel area with flexuose public electrode and pixel electrode, in this sub-pixel area, liquid crystal molecule rotates with both direction in pixel, wherein the partial pixel auxiliary electrode from each in a zigzag pixel electrode sweep, on the outstanding direction of this sweep, along liquid crystal molecule with the outstanding projection in border between two sub-pixel area of different directions rotation, be used to make the spin stabilization of two liquid crystal molecules between the sub-pixel area.
Preferably, flexuose public electrode and pixel electrode define sub-pixel area, in this sub-pixel area, liquid crystal molecule rotates with both direction in pixel, wherein the public auxiliary electrode of part from each in a zigzag public electrode sweep, on the outstanding direction of this sweep, along liquid crystal molecule with the outstanding projection in border between two sub-pixel area of different directions rotation, be used to make the spin stabilization of two liquid crystal molecules between the sub-pixel area.
Preferably plane switch mode active matrix liquid crystal display device further comprises the passivating film that covers above-mentioned public electrode.
Preferably plane switch mode active matrix liquid crystal display device further comprises the passivating film that covers pixel electrodes.
The passivating film that covers pixel electrodes or public electrode will relax the electric field intensity in pixel electrode or the generation of public electrode edge, guarantee to prevent the defective that occurs in liquid crystal molecule and display image process.
Preferably, on first substrate, form first contact hole that pixel electrode is electrically connected with source electrode,, and second contact hole that public electrode is electrically connected with public electrode wire, first and second contact holes can be square or rectangle, the one edge lengths is more than or equal to 6 μ m.
First and second contact holes, one edge lengths can guarantee to carry out suitable electrically contacting more than or equal to 6 μ m.
Preferably, on first substrate, form one first contact hole that pixel electrode is electrically connected with source electrode,, and second contact hole that is electrically connected with public electrode wire of public electrode just, the inside surface of this first and second contact hole all covers with metal film.
By covering metal film at the inside surface of first and second contact holes, can reduce the public electrode made by transparent metal and the resistance between the public electrode wire, thereby improved the homogeneity of display image.
For example, pixel electrode can be formed by second metal level that forms data line.
Because pixel electrode is formed on the different aspects each other with public electrode, pixel electrode and public electrode be short circuit each other not, has therefore guaranteed the raising of the rate that manufactures a finished product.
Preferably, pixel electrode is formed on second metal level that forms drain electrode, and image also shows in this zone, except being made up of transparent metal and being formed on the first metal layer that forms grid with the part of public electrode the overlapping part of data line.
Because pixel electrode and public electrode are formed on the aspect that differs from one another, thus the not short circuit each other of pixel electrode and public electrode, thus guaranteed the raising of the rate that manufactures a finished product.In addition, because the floating electrode that is made of ground floor also is to form forming on the aspect of public electrode,, guaranteed the raising of display quality so by being electrically connected with public electrode, floating electrode becomes fixed electorde.
Preferably, plane switch mode active matrix liquid crystal display device further comprises: be clipped in data line and and the overlapping public electrode of data line between the interlayer insulating film formed by transparent metal, this interlayer insulating film only be formed on public electrode below.
Guaranteed so no longer need form interlayer insulating film between public electrode and data line in than required regional big zone, data line almost can be covered by public electrode fully like this, and can not increase the stray capacitance between public electrode and the data line.
Preferably, plane switch mode active matrix liquid crystal display device further comprises: be clipped in data line and and the overlapping public electrode of data line between the interlayer insulating film formed by transparent metal, this interlayer insulating film is made by inoranic membrane.
By adopting inorganic material to make interlayer insulating film, this interlayer insulating film can be enhanced the transparency.In addition, it can also improve the reliability of thin film transistor (TFT).
Preferably, plane switch mode active matrix liquid crystal display device further comprises: be clipped in data line and and the overlapping public electrode of data line between the interlayer insulating film formed by transparent metal, this interlayer insulating film is made by organic membrane.
Because the specific inductive capacity of organic membrane is littler than inoranic membrane, so the interlayer insulating film of being made up of organic material has the specific inductive capacity littler than the interlayer insulating film of forming with inorganic material.In addition, the process of the interlayer insulating film of making organic material is simpler than the technology of making same inorganic material.
Preferably, plane switch mode active matrix liquid crystal display device further comprises: be clipped in data line and and the overlapping public electrode of data line between the interlayer insulating film formed by transparent metal, this interlayer insulating film is to constitute and second film that covers on first film constitutes by first film that constitutes with inoranic membrane with organic membrane.
Compare with the interlayer insulating film that only uses inoranic membrane to constitute, the interlayer insulating film with this sandwich construction can have littler specific inductive capacity.In addition, contact with semiconductor layer in the thin film transistor (TFT) by will being designed to by first film that inoranic membrane is formed, can and further pass through on first film, to form second film, can between first and second films, form stable interface, thereby the reliability that guarantees thin film transistor (TFT) is improved.
For example, inoranic membrane can be selected from silicon nitride film, inorganic polysilazane (polysilazane) film, silicon oxide film or comprise above-mentioned both or many persons' sandwich construction.
These inoranic membranes can allow the reliability of thin film transistor (TFT) be enhanced.
For example, organic membrane can be selected from photosensitive acrylic resin film, light-sensitive polyimide film, benzocyclobutene (benzocyclobutene) (BCB) film, organic polysilazane (polysilazane) film or silicone film etc.
These organic membrane can be easy to make.
For example, first film can be that silicon nitride film constitutes, and second film can be photosensitive acrylic resin film or photosensitive polyimide resin film formation.
The sandwich construction that comprises above-mentioned first and second films can reduce the specific inductive capacity of interlayer insulating film, guarantees that the reliability of thin film transistor (TFT) is strengthened.
Preferably, make by transparent metal and and the overlapping public electrode of data line further and the region overlapping between sweep trace and the public electrode.
Public electrode with this structure can shield the electric field of revealing from sweep trace, thereby it can strengthen the controllability of viewing area by the electric field that produces between pixel electrode and public electrode, guarantee that percentage of open area is enhanced.
Preferably make and further overlapping with the channel region of thin film transistor (TFT) with the overlapping public electrode of data line by transparent metal.
The public electrode that possesses this structure can prevent that electric field from entering thin film transistor (TFT) from the outside, guarantees that the stability of tft characteristics when display image and reliability are improved.
Preferably form memory capacitance between public electrode wire and pixel auxiliary electrode, described public electrode wire is to be made of the first metal layer that forms grid, and described pixel auxiliary electrode is to be made of second metal level that forms drain electrode.
By forming public electrode wire that constitutes by the first metal layer and the pixel auxiliary electrode that constitutes by second metal level, can be in the formation memory capacitance up and down of pixel, thus improved memory capacitance, and further guarantee the stability that image shows.
Preferably, public electrode wire is formed on the opposed edge or one side of sweep trace along the sweep trace in the plane of each pixel.
By the public electrode wire that uses said method to form, the zone that occupies by public electrode will make transparent region be enhanced, and this is because public electrode uses transparent material to constitute.This has guaranteed the raising of percentage of open area in the plane switch mode active matrix liquid crystal display device.The public electrode wire that is formed on the sweep trace opposed edge can provide the memory capacitance bigger than the public electrode wire on the one side that is formed on sweep trace, guarantees that the image demonstration can more stably improve.
Preferably, plane switch mode active matrix liquid crystal display device may further include light non-transmittable layers, its be electrically connected with public electrode and be formed on data line not with the zone of black basalis and multi layer colour ply in below the data line, and public electrode is not overlapping with data line.
Light non-transmittable layers can prevent that light from revealing, thus the interference when having prevented display image.
Preferably, grid is made of the first metal layer, and drain electrode is made of second metal level, and first and second metal levels can be made of chromium layer, aluminium lamination, titanium layer, molybdenum layer, tungsten layer and the multilayer film that comprises above-mentioned one or more metal levels.
These metal films can guarantee to reduce resistance, strengthen reliability.
Preferably, when watching from above, pixel electrode and source electrode or all be to be electrically connected to each other by first contact hole that is arranged in each pixel on one of bottom and upper segment by the pixel auxiliary electrode that second metal level forms, and when watching from above, the public electrode and the public electrode wire that are formed by the first metal layer all are to be electrically connected to each other by second contact hole that is arranged in each pixel on another bottom and upper segment.
As mentioned above, public electrode is electrically connected to public electrode wire, might reduces common electrode resistance by the contact hole in each pixel.
Preferably transparency electrode is made of tin indium oxide (ITO).
Tin indium oxide (ITO) is very stable in electrochemical reaction.Therefore, the public electrode of being made up of ITO can be designed to the pixel electrode both and directly contact with oriented film, with the liquid crystal display device that comprises the public electrode made by other any metals (except that ITO) and pixel electrode relatively, guaranteed the reliability of plane switch mode active matrix liquid crystal display device.
Preferably, between the pixel auxiliary electrode of the public electrode wire of the first metal layer formation that forms grid and second metal level formation that formation drains, form memory capacitance.
Preferably, public electrode and pixel electrode limit sub-pixel area in a zigzag, liquid crystal molecule in this sub-pixel area rotates with both direction in pixel, wherein a part of public electrode and pixel electrode (one of at least) from each in a zigzag public electrode sweep, on the outstanding direction of this sweep, along liquid crystal molecule with the outstanding projection in border between two sub-pixel area of different directions rotation, be used to make the spin stabilization of two liquid crystal molecules between the sub-pixel area.
By public electrode or pixel electrode are designed to have such projection, stably display image.
Preferably, plane switch mode active matrix liquid crystal display device further is included in the interlayer insulating film that forms between data line and the public electrode, first film that this interlayer insulating film is made by inoranic membrane constitutes, second film covers above-mentioned first film, it is made by organic membrane, and the thickness of first film is more than or equal to 0.25 μ m.
Even data line and and the overlapping public electrode of data line between second film in produced pin hole, because first film is made by inoranic membrane, and thickness is more than or equal to 0.25 μ m, can have sufficiently high voltage breakdown, so may prevent when making display board or during the short circuit each other of data line and public electrode owing to be formed on the dielectric collapse of the interlayer insulating film between them just in displayed image.Guarantee so defective can not take place in the data line.
Preferably plane switch mode active matrix liquid crystal display device further is included in the color layer that forms on first substrate.
Preferably plane switch mode active matrix liquid crystal display device further is included in the black basalis that forms on first substrate.
By black basalis of design on first substrate and/or color layer, they can be designed to overlapping with data line more accurately, and correspondingly might make the littler width that has of black basalis and color layer, thereby guarantee to increase percentage of open area.
Preferably, plane switch mode active matrix liquid crystal display device further is included in the interlayer insulating film that forms between data line and the public electrode, and this interlayer insulating film comprises organic membrane, black substrate or the color layer that is covered by organic membrane at least.
The organic membrane that constitutes interlayer insulating film can prevent that the impurity in color layer and/or black basalis from dissolving in liquid crystal layer.Can guarantee the enhancing of liquid crystal display device reliability like this.
Preferably, plane switch mode active matrix liquid crystal display device further is included in the interlayer insulating film that forms between data line and the public electrode, first film that this interlayer insulating film is made by inoranic membrane is formed, and second film covers above-mentioned first film, and constitute by organic membrane, color layer or black basalis are sandwiched between first and second films.
The organic membrane that constitutes interlayer insulating film has prevented that the impurity in color layer and/or the black basalis from dissolving in liquid crystal layer, and then prevents that also first substrate is subjected to the influence of electric charge in the color layer and/or ion motion.The reliability that guarantees liquid crystal display device is like this strengthened.
Preferably, plane switch mode active matrix liquid crystal display device further is included in the interlayer insulating film that forms between data line and the public electrode, first film that this interlayer insulating film is made by inoranic membrane is formed, and second film covers above-mentioned first film, it is made by inoranic membrane, and colored or black basalis is clipped between first and second films.
Further, provide a kind of plane switch mode active matrix liquid crystal display device, it comprises that (a) first substrate, (b) are positioned at second substrate of first substrate opposite, and (c) is clipped in the liquid crystal layer between first and second substrates.Wherein first substrate comprises that (a1) has grid, the thin film transistor (TFT) of drain electrode and source electrode, (a2) each all relevant pixel electrode with the pixel that will drive, (a3) apply public electrode with reference voltage, (a4) data line, (a5) sweep trace, (a6) public electrode wire, described grid is electrically connected with sweep trace, drain electrode is electrically connected with data line, source electrode is electrically connected with pixel electrode, public electrode is electrically connected with public electrode wire, pixel electrode is in a zigzag, and be in a zigzag with almost equal interval public electrode adjacent one another are, and adjacent one another are with almost equal interval, the two-way electric field that almost is parallel to first substrate surface is applied on pixel electrode and the public electrode.This plane switch mode active matrix liquid crystal display device comprises first sub-pixel area that applies the electric field with first direction to it, and apply second sub-pixel area of electric field with second direction to it, in first sub-pixel area, liquid crystal molecule axle in the liquid crystal layer rotates on the plane that is parallel to first substrate surface along first sense of rotation, in second sub-pixel area, liquid crystal molecule axle in the liquid crystal layer rotates on the plane that is parallel to first substrate surface along second sense of rotation that is different from first sense of rotation, public electrode is made by transparent material, its forms and to be positioned at than data line more on the aspect near liquid crystal layer, near the zone of the data line being positioned at sweep trace, public electrode is overlapping fully with the data line of the insulation course that accompanies betwixt, this plane switch mode active matrix liquid crystal display device further comprises and is arranged in public electrode fully and the light non-transmittable layers of data line overlapping areas, this light non-transmittable layers is formed on second substrate, perhaps make light non-transmittable layers be positioned at than the nearlyer liquid crystal layer of data line and in the face of on first substrate of data line, this light non-transmittable layers is made of black basalis or multi layer colour layer, the width of black basalis or multi layer colour layer less than with the width of the overlapping public electrode of data line, data line is to extend along pixel electrode in a zigzag.
Above-mentioned plane switch mode active matrix liquid crystal display device can be applied to that so-called multizone (multi-domain) obtains above the plane switch mode active matrix liquid crystal display device by the plane switch mode active matrix liquid crystal display device that will mention first.Above-mentioned plane switch mode active matrix liquid crystal display device also can be realized above-mentioned first to the 3rd goal of the invention on the multizone plane switch mode active matrix liquid crystal display device.
For example data line, public electrode and pixel electrode in each pixel by a bending in each pixel.
Equal one of data line, public electrode and pixel electrode by setting crooked numerical value, might maximize percentage of open area.
For example the data line in each pixel, public electrode and pixel electrode are by with more than or equal to 3 odd number bending.
Equal odd number by crooked numerical value is set, just can equate with the zone that liquid crystal molecule reverses by counter clockwise direction, thereby the symmetry at assurance visual angle is strengthened in the zone that liquid crystal molecule is reversed in a clockwise direction.
Preferably data line, public electrode and pixel electrode are bent N in each pixel, and wherein N defines according to formula (A):
30[μ m]≤L/ (N+1) [μ m]≤40[μ m] (A) wherein L represents the length of opening.
Bending value in data line, public electrode and the pixel electrode is more little, and percentage of open area is high more.If yet bending value is very little, just can see bending pattern.Preferably, black basalis is to form after the bending of data line, public electrode and pixel electrode, still, if data line, public electrode and pixel electrode bending value are very little, will be difficult more to black basalis pattern-making.By contrast, when data line, public electrode and pixel electrode bending value were very big, bending pattern looked and resembles a line that the formation of therefore black substrate can be linear and thinner more.Yet bending value is big more, and percentage of open area is just more little.Consider these factors, above-mentioned formula (A) can provide the optimal value of data line, public electrode and pixel electrode bending.
Preferably the black basalis in the face of data line has formed a line.
It is the easiest to make black basalis form a line.
Interchangeable scheme is, in the face of the black basalis of data line may in this case, preferably be faced the black basalis and the linear bending of data line of data line to form in a zigzag.
Form and the corresponding to zigzag of the zigzag of data line by deceiving basalis, may improve the percentage of open area in the liquid crystal display device.
Preferably, be positioned at the opposite of black basalis one end, along on the section of the planar interception of the direction of extending perpendicular to data line, along in the face of the distance of the substrate between the end of black basalis one end of data line and data line more than or equal to 4 μ m.
By being with above-mentioned distance setting, might prevent from directly to enter data line from the leakage light of black basalis sloped-end more than or equal to 4 μ m.
Preferably black basalis is formed on second substrate, and when from top observation, the black basalis of facing data line on any position all with the overlapping 4 μ m or bigger of data line.
Be designed on any position all and the overlapping 4 μ m or bigger of data line by deceiving basalis, might prevent from directly to enter data line from the leakage light of black basalis sloped-end.
Preferably first or second substrate further is made of the color layer that property along the line forms.
Color layer can property formation the most along the line.
Preferably one of first and second substrates are further by constituting with the color layer that forms in a zigzag.
Slightly have any problem than constituting the linear color layer possibly though constitute the zigzag color layer, color layer can be complementary with the zigzag data line that is formed on first substrate in shape in a zigzag, thereby has guaranteed the raising of the utilization rate of light.
Preferably the bending of color layer conforms to data line.
Bending by making color layer conforms to data line, can increase percentage of open area.
Preferably, plane switch mode active matrix liquid crystal display device further comprises: the reverse rotation in sub-pixel area stops structure, in this zone, all liquid crystal molecules all are with identical direction rotation, so that prevent that liquid crystal molecule is with the direction rotation opposite with this equidirectional.This reverse rotation stops structure to comprise auxiliary electrode, the voltage that imposes on it equals in pixel electrode and the public electrode voltage of at least one, if be change with the acute angle rotation so that make the overlapping initial orientation direction of direction of the direction of liquid crystal molecule initial orientation and the electric field that produces in the sub-pixel area in all subareas in sub-pixel area.
By being to form pixel auxiliary electrode and public auxiliary electrode between sub-pixel area of twisting in a clockwise direction and the sub-pixel area of counterclockwise the twisting at liquid crystal molecule, the orientation of possible stabilizing liquid crystal molecule guarantees that display image is more clear.The border that pixel auxiliary electrode and public auxiliary electrode both can stablize these sub-pixel area.
Preferably plane switch mode active matrix liquid crystal display device further comprises: the isolation that is made of the aspect that constitutes grid and drain electrode jointly (isolated floating) electrode that floats.This isolation floating electrode and public electrode or pixel electrode accompany the zigzag public electrode of insulation course or the overlapping public electrode or the pixel electrode in bend office of pixel electrode between it, it also has on the outstanding direction of sweep, along extension that the periphery between first and second sub-pixel area extends.
In the zone of above-mentioned very difficult formation auxiliary electrode, isolate the formation of floating electrode and can easily stablize the control area.Generally speaking, when pressing display screen, because the athletic meeting in regional territory stays track.The formation of isolating floating electrode can prevent to stay this track, even display screen is pressed, what also can guarantee to show is stable.
Preferably in a zigzag data line comprises that the direction of extending from data line and the linear segment that is tilted to the right left.
Preferably black basalis is formed on second substrate, and should black basalis forms all to have on any position greater than the live width by the minimum widith Dmin of following formula definition in the face of data line:
Dmin=D+LS * tan θ-(D-8) * 2[μ m] width of D representative data line wherein, resulting length when LS is illustrated in the direction projection that linear segment extends towards data line, θ represents the angle that forms between direction that data line extends and the linear segment.
Above-mentioned formula can define the minimum widith of black basalis theoretically.
Preferably in a zigzag data line comprises first linear segment that extends in parallel with the data line bearing of trend and from the data line bearing of trend and second linear segment that is tilted to the right left.
First linear segment that extends in parallel along the data line bearing of trend might reduce and is used to prevent that the inclination of light from revealing the width of required black basalis, and this light may throw into question when the black basalis of linearity is formed on second substrate.
Preferably plane switch mode active matrix liquid crystal display device may further include the coating that cooperates with recess that forms on zigzag data line sweep.
This coating can reduce the oblique width of revealing required black basalis of inclination that is used to prevent light, and this light may throw into question when the black basalis of linearity is formed on second substrate.
This plane switch mode active matrix liquid crystal display device may further include the unsteady light tight film of being made by opaque metal, and this light tight film that floats is overlapping at the recess and the data line of data line sweep.
Preferably, this plane switch mode active matrix liquid crystal display device may further include font data line overlap with it, from each outstanding projection of sweep of public electrode in a zigzag.
When liquid crystal molecule by and the overlapping public electrode of data line and and the pixel electrode that adjoins of public electrode between the electric field that produces when both direction rotates, above-mentioned projection can be stablized these zones along the periphery place between the zone of both direction rotation at liquid crystal molecule.
Preferably, at pixel electrode that second metal level that forms drain electrode constitutes with form between the public electrode wire that the first metal layer of grid constitutes and form memory capacitance.
The memory capacitance that has guaranteed liquid crystal layer like this can increase, and image is stably shown.
At this, a kind of plane switch mode active matrix liquid crystal display device also further is provided, comprising: (a) first substrate, (b) are positioned at second substrate of first substrate opposite, and the liquid crystal layer that (c) clips between first and second substrates; Wherein first substrate comprises that (a1) has the thin film transistor (TFT) of grid, drain electrode and source electrode, (a2) each all relevant with the pixel that will drive pixel electrode, (a3) and apply the public electrode, (a4) data line, (a5) sweep trace of reference voltage and (a6) public electrode wire to it; Grid is electrically connected with sweep trace, drain electrode is electrically connected with data line, source electrode is electrically connected with pixel electrode, public electrode is electrically connected with public electrode wire, pixel electrode presents zigzag manner, and spaced apart equally spacedly with adjacent pixel electrodes, public electrode presents zigzag manner, separate equally spacedly with adjacent pixel electrodes, on pixel electrode and public electrode, apply almost surperficial parallel two-way electric field with first substrate; This plane switch mode active matrix liquid crystal display device comprises first sub-pixel area, applies the electric field with first direction to it, and the liquid crystal molecule axle in the liquid crystal layer is rotating with surperficial parallel upper edge, plane first sense of rotation of first substrate; And, also comprise second sub-pixel area that applies electric field to it with second direction, and the liquid crystal molecule axle with the parallel plane of first substrate surface on, be rotated along second sense of rotation different with first sense of rotation; The opening of first substrate extends along the direction perpendicular to the data line bearing of trend, and public electrode is made by transparent material, and is formed on it and is positioned at than data line more on the aspect near liquid crystal layer.Near the zone of the data line being positioned at sweep trace, public electrode is overlapping with the data line that accompanies insulation course therebetween fully; Public electrode is electrically connected with public electrode wire by the contact hole in each pixel.This plane switch mode active matrix liquid crystal display device further comprises light non-transmittable layers, it is positioned at the complete and data line overlapping areas of public electrode, this light non-transmittable layers is formed on second substrate or first substrate, so that make this light non-transmittable layers more approach liquid crystal layer and face data line than data line; This light non-transmittable layers is made of the color layer of black basalis or multilayer, the width of the color layer of this black basalis or multilayer less than with the width of the overlapping public electrode of data line, the extension of data line property along the line, the gate line that constitutes grid is to extend in a zigzag.
In the liquid crystal display device that the direction that first base openings is extended with data line is extended, preferably, liquid crystal is infused in the space that forms between first and second substrates along the direction that data line extends.On the contrary, in the liquid crystal display device that the direction of extending perpendicular to data line on the opening edge of first substrate is extended, for example above-mentioned liquid crystal display device preferably, is infused in the space that forms between first and second substrates with liquid crystal along the direction of extending perpendicular to data line.Therefore, can select liquid crystal to inject the direction in space according to the direction that the liquid crystal display device split shed extends.
At this, a kind of plane switch mode active matrix liquid crystal display device further is provided again, comprising: (a) first substrate, (b) are positioned at second substrate of first substrate opposite, and the liquid crystal layer that (c) clips between first and second substrates; Wherein first substrate comprises that (a1) has the thin film transistor (TFT) of grid, drain electrode and source electrode, (a2) each all relevant with the pixel that will drive pixel electrode, (a3) and apply the public electrode, (a4) data line, (a5) sweep trace of reference voltage and (a6) public electrode wire to it; Grid is electrically connected with sweep trace, drain electrode is electrically connected with data line, source electrode is electrically connected with pixel electrode, public electrode is electrically connected with public electrode wire, pixel electrode presents zigzag manner, equally spaced from one another opening, and public electrode presents zigzag manner, separate equally spacedly each other, on pixel electrode and public electrode, apply almost surperficial parallel two-way electric field with first substrate; This plane switch mode active matrix liquid crystal display device comprises first sub-pixel area, applies the electric field with first direction to it, and at this, the liquid crystal molecule axle in the liquid crystal layer is rotating with surperficial parallel upper edge, plane first sense of rotation of first substrate; And, also comprise second sub-pixel area that applies electric field to it with second direction, at this, the liquid crystal molecule axle with the parallel plane of first substrate surface on, be rotated along second sense of rotation different with first sense of rotation; To accompany the bend office of the zigzag public electrode of dielectric film or pixel electrode and public electrode or pixel electrode betwixt overlapping by forming isolation floating electrode that the drain electrode or the aspect of grid form, the projection that at least one in public electrode and the pixel electrode have from the sweep of zigzag public electrode and pixel electrode along the periphery between first and second sub-pixel area, give prominence to the direction of sweep projection.
On the zone that is difficult to form at above-mentioned auxiliary electrode, also can be stabilized in the orientation of the liquid crystal molecule in the liquid crystal layer by forming floating electrode.
Another aspect of the present invention has been to provide the electron device that comprises an above-mentioned plane switch mode active matrix liquid crystal display device.
The design of the LCD panel by comprising an above-mentioned plane switch mode active matrix liquid crystal display device, this LCD panel can have the percentage of open area that increases on the viewing area, guarantee that the brightness of viewing area is enhanced.
Brief description of drawings
Fig. 1 is the fragmentary cross-sectional view of conventional liquid crystal display device.
Fig. 2 is based on the fragmentary cross-sectional view of plane switch mode active matrix liquid crystal display device of the present invention.
Fig. 3 is a curve map, shows the analog result of revealing the electric field function by the demonstration shielding that obtains based on plane switch mode active matrix liquid crystal display device of the present invention.
Fig. 4 is a planimetric map based on plane switch mode active matrix liquid crystal display device of the present invention.
Fig. 5 is the sectional view of a Fig. 4 along the V-V line.
Fig. 6 is a circuit diagram based on unit pixel in the plane switch mode active matrix liquid crystal display device of first embodiment.
Fig. 7 is a partial plan based on the another kind of form of plane switch mode active matrix liquid crystal display device of first embodiment.
Fig. 8 be in the plane switch mode active matrix liquid crystal display device enumerated of a Figure 10 along the sectional view of A-A, B-B, C-C line, wherein the second primary insulation film has sandwich construction.
Fig. 9 is A-A, B-B, a sectional view of C-C line in the plane switch mode active matrix liquid crystal display device of enumerating along Figure 10, and wherein the second primary insulation film has single layer structure.
Figure 10 is a planimetric map based on the plane switch mode active matrix liquid crystal display device of first embodiment, is used to illustrate the method for making this device.
Figure 11 is a planimetric map based on the plane switch mode active matrix liquid crystal display device of first embodiment, shows the relation between data line width and the public electrode width.
Figure 12 is a fragmentary cross-sectional view based on the plane switch mode active matrix liquid crystal display device of first embodiment, shows the relation between data line width and the black basalis width.
Figure 13 is a planimetric map, shows the zone that forms above black second substrate of basalis in the cited plane switch mode active matrix liquid crystal display device of Fig. 4.
Figure 14 is a fragmentary cross-sectional view based on the plane switch mode active matrix liquid crystal display device of first embodiment, shows the advantage of the public electrode of being made up of ITO.
Figure 15 is a fragmentary cross-sectional view based on the plane switch mode active matrix liquid crystal display device of first embodiment, shows the relation between the width of public electrode after the extension and data line.
Figure 16 is a curve map, shows the relevant analog result of leakage light with data line one side.
Figure 17 is a fragmentary cross-sectional view based on the another kind of mode of plane switch mode active matrix liquid crystal display device of first embodiment.
Figure 18 is a fragmentary cross-sectional view based on the another kind of mode of plane switch mode active matrix liquid crystal display device of first embodiment.
Figure 19 A is a planimetric map, only shows first and second metal levels on the plane switch mode active matrix liquid crystal display device that Figure 18 enumerates.
Figure 19 B is a planimetric map, only shows the ITO layer of the plane switch mode active matrix liquid crystal display device that Figure 18 enumerates.
Figure 20 is a fragmentary cross-sectional view based on the plane switch mode active matrix liquid crystal display device of first embodiment, is used for illustrating by form the advantage that passivating film obtains on public electrode.
Figure 21 is the fragmentary cross-sectional view of a plane switch mode active matrix liquid crystal display device, is used for illustrating the problem that produces when not forming passivating film on public electrode.
Figure 22 remains a fragmentary cross-sectional view based on another distortion of plane switch mode active matrix liquid crystal display device of first embodiment.
Figure 23 still is a fragmentary cross-sectional view based on another distortion of plane switch mode active matrix liquid crystal display device of first embodiment.
Figure 24 is a fragmentary cross-sectional view based on another distortion of plane switch mode active matrix liquid crystal display device of first embodiment.
Figure 25 is a fragmentary cross-sectional view based on another distortion of plane switch mode active matrix liquid crystal display device of first embodiment.
Figure 26 is a fragmentary cross-sectional view based on another distortion of plane switch mode active matrix liquid crystal display device of first embodiment.
Figure 27 is a fragmentary cross-sectional view based on another distortion of plane switch mode active matrix liquid crystal display device of first embodiment.
Figure 28 A is a sectional view based on the plane switch mode active matrix liquid crystal display device of first embodiment to 28K, schematically illustrates each step of making above-mentioned device first case method.
Figure 29 A is a sectional view based on the plane switch mode active matrix liquid crystal display device of first embodiment to 29I, schematically illustrates each step of second case method of making above-mentioned device.
Figure 30 A is based on the sectional view of the plane switch mode active matrix liquid crystal display device of first embodiment to 30I, schematically illustrates each step of the 3rd case method of making above-mentioned device.
Figure 31 is the planimetric map of explanation based on the sweep trace in the plane switch mode active matrix liquid crystal display device of first embodiment, data line and public electrode wire layout.
Figure 32 is the planimetric map of explanation based on the sweep trace end in the plane switch mode active matrix liquid crystal display device of first embodiment, data line end and public electrode thread end layout.
Figure 33 A enumerates each step that first case method of the above-mentioned device of plane switch mode liquid crystal display device that has each end is made in explanation to the sectional view that 33J is based on the plane switch mode active matrix liquid crystal display device of first embodiment.
Figure 34 A enumerates each step that second case method of the above-mentioned device of plane switch mode liquid crystal display device that has each end is made in explanation to the sectional view that 34I is based on the plane switch mode active matrix liquid crystal display device of first embodiment.
Figure 35 A is based on the sectional view of the plane switch mode active matrix liquid crystal display device of first embodiment to 35H, schematically illustrates each step of the 3rd case method of making the above-mentioned device of plane switch mode liquid crystal display device that has each end.
Figure 36 is based on the planimetric map of the plane switch mode active matrix liquid crystal display device of second embodiment of the invention.
Figure 37 is the sectional view that intercepts along the XXXVII-XXXVII line among Figure 36.
Figure 38 is based on the planimetric map of the plane switch mode active matrix liquid crystal display device of third embodiment of the invention.
Figure 39 is the sectional view that intercepts along the XXXIX-XXXIX line among Figure 38.
Figure 40 is based on the planimetric map of the plane switch mode active matrix liquid crystal display device of four embodiment of the invention.
The sectional view that intercepts along the XXXI-XXXI line among Figure 41 Figure 40.
Figure 42 A shows the direction that opening extends.
Figure 42 B shows another direction that opening extends.
Figure 43 A is a planimetric map, shows first example of zigzag.
Figure 43 B is a planimetric map, shows second example of zigzag.
Figure 44 is the planimetric map of conventional liquid crystal display device, is used for illustrating that the plane switch mode active matrix liquid crystal display device based on four embodiment of the invention can increase percentage of open area.
Figure 45 is the sectional view of Figure 44 along the intercepting of XXXXV-XXXXV line.
Figure 46 is the planimetric map of conventional liquid crystal display device, is used for illustrating that the plane switch mode active matrix liquid crystal display device based on four embodiment of the invention can increase percentage of open area.
Figure 47 is the sectional view of Figure 46 along the intercepting of XXXXVI-XXXXVI line.
Figure 48 is based on the planimetric map of the plane switch mode active matrix liquid crystal display device of four embodiment of the invention, shows the situation of the percentage of open area increase of this device.
Figure 49 is the sectional view of Figure 46 along the intercepting of XXXXIX-XXXXIX line.
Figure 50 is based on the fragmentary cross-sectional view of the another kind of form of plane switch mode active matrix liquid crystal display device of four embodiment of the invention.
Figure 51 is based on the planimetric map of black basalis first example in the plane switch mode active matrix liquid crystal display device of four embodiment of the invention.
Figure 52 is based on the planimetric map of black basalis second example in the plane switch mode active matrix liquid crystal display device of four embodiment of the invention.
Figure 53 is based on the planimetric map of black basalis minimum widith in the plane switch mode active matrix liquid crystal display device of four embodiment of the invention.
Figure 54 is based on the planimetric map of black basalis the 3rd example in the plane switch mode active matrix liquid crystal display device of four embodiment of the invention.
Figure 55 is based on the planimetric map of black basalis the 4th example in the plane switch mode active matrix liquid crystal display device of four embodiment of the invention.
Figure 56 is based on the planimetric map of black basalis the 5th example in the plane switch mode active matrix liquid crystal display device of four embodiment of the invention.
Figure 57 is based on the planimetric map of black basalis the 6th example in the plane switch mode active matrix liquid crystal display device of four embodiment of the invention.
Figure 58 is based on the partial plan of another distortion in the plane switch mode active matrix liquid crystal display device of four embodiment of the invention.
Figure 59 remains the partial plan based on another distortion in the plane switch mode active matrix liquid crystal display device of four embodiment of the invention.
Figure 60 remains the partial plan based on another distortion in the plane switch mode active matrix liquid crystal display device of four embodiment of the invention, wherein uses the floating electrode of enumerating among Figure 59.
Figure 61 be among Figure 60 along the sectional view of A-A, B-B and C-C line intercepting, show TFT part, unit pixel part and contact hole part in the unit pixel part in the plane switch mode active matrix liquid crystal display device of four embodiment of the invention.
Figure 62 A is the planimetric map of the transparency electrode shown in Figure 60.
Figure 62 B is the electrode plane figure except that transparency electrode shown in Figure 60.
Figure 63 A is based on the fragmentary cross-sectional view of the plane switch mode active matrix liquid crystal display device of fifth embodiment of the invention.
Figure 63 B is based on the fragmentary cross-sectional view of the plane switch mode active matrix liquid crystal display device of the 6th embodiment.
Figure 64 is based on the planimetric map of the plane switch mode active matrix liquid crystal display device of eighth embodiment of the invention.
Figure 65 is the sectional view of Figure 64 along the intercepting of XXXXXXV-XXXXXXV line.
The block diagram of electron device first example of the plane switch mode active matrix liquid crystal display device that the present invention's first to the 6th embodiment that is based on Figure 66 adopts.
The block diagram of electron device second example of the plane switch mode active matrix liquid crystal display device that the present invention's first to the 6th embodiment that is based on Figure 67 adopts.
Explanation first embodiment of preferred embodiment
Fig. 4,5 and 6 has enumerated the plane switch mode active matrix liquid crystal display device that adopts based on first embodiment of the invention.The planimetric map of the liquid crystal display device 10 that first embodiment that is based on Fig. 4 adopts, Fig. 5 are the sectional views that intercepts along the V-V line in Fig. 4, and Fig. 6 is the circuit diagram of unit pixel simultaneously.
As shown in Figure 5, liquid crystal display device 10 is made of active device substrate 11, counter substrate 12 and the liquid crystal layer 13 between active device substrate 11 and counter substrate 12.
Active-matrix substrate 11 comprises electrical isolation transparency carrier 22, be formed on the first metal layer on the electrical isolation transparency carrier 22 that defines sweep trace 28 (consulting Fig. 4) and grid 30c (consulting Fig. 6), be formed on first interlayer insulating film 23 on the electrical isolation transparency carrier 22, be formed on the island type amorphous silicon film on first interlayer insulating film 23, define the source electrode 30b of data line 24 and thin film transistor (TFT) 30 and second metal level of drain electrode 30a therein, be formed on the first film 25a on the first interlayer insulation film 23, be formed on the second film 25b on the first film 25a, with public electrode 26 and the pixel electrode 27 that on the second film 25b, form as transparency electrode.
The first and second film 25a and 25b constitute second electrical insulating film 25.
Active-matrix substrate 11 further is included in the pixel auxiliary electrode 35 that forms on first interlayer insulating film 23 that forms with data line 24 (consulting Fig. 8).Data line 24 and pixel auxiliary electrode 35 are made up of second metal level.
According to this instructions, " on " layer means the aspect that is positioned near liquid crystal layer 13, and the D score layer means active device substrate 11 and counter substrate 12 aspect away from liquid crystal layer 13 among both that is located at.
Although do not illustrate, between active device substrate 11 and counter substrate 12, still formed the gap, so that guarantee the thickness of liquid crystal layer 13, and the liquid crystal layer 13 between active device substrate 11 and counter substrate 12 around seal, avoid the leakage of liquid crystal molecule.
As shown in Figure 4, active device substrate 11 comprise the data line 24 of transmission of data signals, to its public electrode wire 26a that applies reference voltage with 26b, apply the public electrode 26 of reference voltage, the pixel electrode 27 relevant, the sweep trace 28 and the thin film transistor (TFT) (TFT) 30 of transmission sweep signal with the pixel of wanting display image to it.
Thin film transistor (TFT) 30 comprises grid 30c (consulting Fig. 8), drain electrode 30a and source electrode 30b.Thin film transistor (TFT) 30 is positioned near sweep trace relevant with pixel 28 and data line 24 point of crossing.Grid 30c is electrically connected with sweep trace 28, and drain electrode 30a is electrically connected with data line 24, and source electrode 30b is electrically connected with pixel electrode 27.
As shown in Figure 4, the public electrode 26 that forms as transparency electrode is electrically connected with public electrode wire 26b by contact hole 39a.
Fig. 7 shows respectively in each layer of liquid crystal display device shown in Figure 4 10, defines the layer (B) of the transparency electrode that constitutes public electrode 26 and pixel electrode 27, and the layer (A) except that above-mentioned layer (B).In Fig. 7, when seeing planimetric map, can understand and the overlapping public electrode 26 of data line 24 and and the pixel electrode 27 that adjoins of public electrode 26 between do not have light tight film.
Fig. 8 and Fig. 9 show the contact hole part of TFT device portions, unit pixel part and unit pixel part in the plane switch mode liquid crystal display device 10.In Figure 10, its TFT device portions, unit pixel part and contact hole have partly schematically intercepted sectional view along A-A, B-B and C-C line respectively.
In Fig. 8, second interlayer insulating film 25 is designed to have the sandwich construction of the first film 25a and the second film 25b, and in Fig. 9, second interlayer insulating film 25 is designed to have the single layer structure of the first film 25a.Describe below with reference to Fig. 8.When second interlayer insulating film 25 had single layer structure, the first film 25a can be considered to the lower floor in second interlayer insulating film, and the second film 25b can be considered to the upper strata in second interlayer insulating film simultaneously.
As Fig. 8 and shown in Figure 4, public electrode wire 26a and 26b are made of the first metal layer, extend in parallel along data line 24, and be subjected to the voltage of public electrode 26 around it.
As shown in Figure 4, the pixel electrode 27 that is made of transparency electrode is electrically connected with pixel auxiliary electrode 35 by contact hole 39b.This pixel auxiliary electrode 35 comprises second metal level, and forms with the source electrode 30b of thin film transistor (TFT) 30 is whole.
In plane switch mode active matrix liquid crystal display device 10 based on first embodiment, in according to the pixel of selecting and being written into by the sweep signal of sweep trace 28 transmission by data line 24 data signals transmitted, electric field between public electrode 26 and pixel electrode 27, that generation is parallel with 22 with transparency carrier 16, the orientation direction of the liquid crystal molecule in the liquid crystal layer is rotated according to the electric field that is parallel in transparency carrier 16 and 22 planes simultaneously, thereby, display image on the display screen of liquid crystal display device 10.In Fig. 4, the vertical long district that is surrounded by public electrode 26 and pixel electrode 27 is called as post.In plane switch mode active matrix liquid crystal display device 10, public electrode 26 and pixel electrode 27 boths are by indium zinc oxide (ITO), and promptly transparent material forms.
Shown in Fig. 7 and 8, plane switch mode active matrix liquid crystal display device 10 can be designed to comprise pixel auxiliary electrode 35 below second interlayer insulating film 25.This pixel auxiliary electrode 35 forms with the source electrode 30b of thin film transistor (TFT) 30 is whole, and this thin film transistor (TFT) is formed on second metal level on first interlayer insulating film 23.
As shown in Figure 7, pixel auxiliary electrode 35 is made of the 35a of first, second portion 35b and third part 35c, wherein the 35a of first is overlapping with the public electrode wire 26b that is formed by the first metal layer, and has defined memory capacitance with public electrode wire 26b; Second portion 35b is overlapping with the public electrode wire 26a that is formed by the first metal layer, and has defined memory capacitance with public electrode wire 26a; Third part 35c and data line 24 extend in parallel, and be formed on second interlayer insulating film 25 pixel electrode 27 that forms below, and the first and second part 35a and 35b are interconnected with one another.First of the plain auxiliary electrode 35 of " I " image that is of pixel auxiliary electrode 35 is formed by opaque second metal level on first interlayer insulating film 23 to third part 35a, 35b and 35c.As what can understand by Fig. 8, the drain electrode 30a of thin film transistor (TFT) 30 and source electrode 30b also are made of opaque second metal level.Source electrode 30b is electrically connected with pixel auxiliary electrode 35.
Although at pixel auxiliary electrode 35 is when being made of opaque metal, the optical transmission rate can slightly reduce, but, when when the planimetric map of pixel is watched, by being electrically connected to each other to third part 35a, 35b and 35c with first, might descend both sides to form memory capacitance thereon, thus the stability when having guaranteed that the increase of memory capacitance and image show.
It should be noted that the shape of pixel auxiliary electrode 35 is not limited to " I " type shown in Fig. 7.Pixel auxiliary electrode 35 can be designed to Any shape, unless it be positioned at pixel electrode 27 below.
Though Fig. 7 does not illustrate, public auxiliary electrode can be made of second metal level on first interlayer insulating film 23, and with all be that the public electrode wire 26a that is made of the first metal layer and 26b and public electrode 26 are electrically connected.
As shown in Figure 8, the grid 30c of thin film transistor (TFT) 30 is made of the first metal layer.
From the planimetric map of pixel as can be seen,, might descend both sides to form memory capacitance thereon by public electrode 26 is electrically connected to each other, thus the stability when having guaranteed that the increase of memory capacitance and image show.
As shown in Figure 4 and Figure 5, the layer that public electrode 26 forms be positioned at data line 24 above, and except the zone that intersects at data line 24 and sweep trace 28 and this regional peripheral region, described public electrode and data line 24 are overlapping fully.
Particularly, as shown in figure 11, suppose the width of L (D) expression data line 24, the width of L (COM) expression public electrode 26, L (COM) is greater than L (D); The width L (D) of data line 24 is covered by the width L (COM) of public electrode 26 fully in addition.
L(COM)＞L(D)
In Fig. 4, owing in zone that data line 24 and sweep trace 28 intersects and the zone around this zone, formed high step, so for fear of short circuit, public electrode 26 can not be overlapping with data line 24 in these zones.
As previously mentioned, top from planimetric map, the black basalis 17 that forms on above-mentioned data line 24 is designed to the width of its width less than public electrode 26, and and the overlapping public electrode 26 of data line 24 and adjoin between the pixel electrode 27 that public electrode 26 forms and do not have light tight film.In addition, black basalis 17 is designed to the width of width less than data line 24, and whole and data line 24 is overlapping.
That is,, suppose the width of L (D) expression data line 24 according to shown in Figure 12, and the width of the black basalis 17 of L (BM) representative, width L (D) is greater than L (BM), and while L (BM) is complete and width L (D) is overlapping.
L(D)＞L(BM)
Be designed to the width of width by deceiving basalis 17, just may utilize the light of the extension of passing the transparent common electrode 26 of extending data line 24, thereby the transmissivity that guarantees to pass the light of panel is strengthened less than data line 24.
In the first embodiment, deceive the width that basalis 17 is designed to have 6 μ m.Yet should be noted that the width of black basalis 17 is not limited to 6 μ m.The width of black basalis 17 can be designed to more than or equal to 6 μ m.If the width of black basalis 17 is less than 6 μ m, a lot of light will be reflected at data line 24 places, and the result is difficult to see the image that shows on the screen of liquid crystal display device 10 under bright environment.
Consequently, public electrode 26 can form simultaneously with the end of liquid crystal display device 10, and is made of the material that constitutes the end.The increase of the number of steps when this has prevented to form public electrode 26.
In liquid crystal display device 10, if public electrode 26 not fully and data line 24 overlapping, then public electrode 26 can not shield the electric field relevant with data line 24.As a result, will between public electrode 26 and pixel electrode 27, produce electric field, cause the fault of liquid crystal molecule.Particularly, liquid crystal molecule can not cause vertical crosstalk according to the running of the voltage difference between public electrode 26 and the pixel electrode 27.
If counter substrate 12 is designed to include black basalis 17, and should have enough big width by black basalis 17, the zone that liquid crystal molecule breaks down may impact to the observer.On the contrary, if black basalis 17 not overlapping with data line 24, by the light non-transmittable layers that is electrically connected with public electrode 26 that forms below data line 24, the zone that liquid crystal molecule breaks down may impact to the observer, thereby has shielded the light that sends from backlight device.If light non-transmittable layers is not electrically connected with public electrode 26, light non-transmittable layers will have unsettled voltage, and the result produces the DC electric field between public electrode 26 and pixel electrode 27, promptly take place such as the fault of crosstalking.
Particularly, above-mentioned this light non-transmittable layers is made of the first metal layer that constitutes sweep trace 28, and is electrically connected with public electrode wire 26a.Because public electrode wire 26a and 26b are electrically connected with public electrode 26 by contact hole 39a, then this public electrode wire 26a and 26b can be used as light non-transmittable layers.
Above-mentioned light non-transmittable layers can be formed by chromium, titanium, molybdenum, tungsten or the aluminium of individual layer, perhaps also can be designed to comprise the sandwich construction of these metal levels.Light non-transmittable layers with sandwich construction can reduce impedance.
With reference to figure 4, in data line 24 and place, sweep trace 28 point of crossing and peripheral region thereof, public electrode 26 is not overlapping with data line 24.Therefore, public electrode 26 can not shield the electric field that comes from data line 24 at data line 24 and sweep trace 28 point of crossing place.As a result, will produce electric field in this point of crossing and the location around it, the running of the liquid crystal molecule in the liquid crystal layer 13 is with undesired.In addition, the electric field owing to from data line 28 will make liquid crystal molecule not run well.
Yet, because public electrode 26a and 26b form by the first metal layer that constitutes sweep trace equally, so public electrode 26a and 26b can not shield above-mentioned point of crossing and the peripheral region thereof that liquid crystal molecule can not run well.
Therefore, preferably these point of crossing and zone shield with black basalis 17.
Figure 13 shows an example, and wherein black basalis 17 has shielded point of crossing and these zones.As shown in figure 13, the black basalis 17 that forms in by the heavy line area surrounded has covered sweep trace 28 and zone on every side thereof and has covered space between sweep trace 28 and the pixel electrode 27 and zone on every side, thus shielding light.
Be made of ITO according to the public electrode in the liquid crystal display device 10 of first embodiment 26, it is a kind of in the transparent material.Having guaranteed like this increases transparent region in liquid crystal display device 10, the result has increased the percentage of open area in the liquid crystal display device 10.
Though the ITO film has possessed quite high surface resistance, be approximately 100 ohm of each unit areas particularly, but, by in each pixel, the ITO film being electrically connected with public electrode wire 26a and 26b, and will be electrically connected to each other by the public electrode that the ITO film constitutes, might reduce the resistance in the public electrode 26 on the whole and prevent the redundancy of public electrode 26.
Be appreciated that according to Fig. 5 second interlayer insulating film 25 is clipped between public electrode 26 and the data line 24.By second interlayer insulating film being designed to have height ratio d/ ε, wherein " d " represents the thickness of second interlayer insulating film 25, and " ε " represents specific inductive capacity, might be reduced in the stray capacitance that forms between data line 24 and the public electrode 26.
In addition, owing to above-mentioned cross-interference issue is resolved, so no longer need to be used to prevent the appearance degradation phenomenon when display image that causes by the electric field of revealing from data line 24 and the black basalis 17 that forms.Therefore, the formation of black basalis 17 guarantees that only for big improvement forms black basalis 17 can have the width of reduction.The width that reduces black basalis 17 can guarantee the increase of percentage of open area in the liquid crystal display device 10.
In liquid crystal display device 10, public electrode 26 and pixel electrode 17 boths are formed on second interlayer insulating film 25.By on identical layer, forming public electrode 26 and pixel electrode 17 together, might in identical step, form public electrode 26 and pixel electrode 17, and make by identical materials, guarantee the raising of the rate of manufacturing a finished product.
As previously mentioned, in liquid crystal display device 10, the public electrode of shadow data line 24 26 is made of ITO.Compare with the public electrode 26 that uses ITO metal in addition to constitute, use the public electrode 26 of ITO formation, might strengthen the reliability of liquid crystal display device 10.Its reason will be explained below.
As described in Figure 14, suppose that public electrode 26 and pixel electrode 27 boths are made by the metal beyond the ITO, they are formed on second interlayer insulating film 25, and thickness also is formed on second interlayer insulating film 25 at the oriented film 31 of 500 to 1000 dusts, has covered public electrode 16 and pixel electrode 27.
If oriented film 31 has pin hole 32, constitute the liquid crystal material of liquid crystal layer 13 and the metal of formation public electrode 26 and pixel electrode 27 and all will produce electrochemical reaction each other, the metal that the result constitutes public electrode 16 and pixel electrode 27 may be used as metallic ion 33 elutions in liquid crystal layer 13.So with metallic ion 33 elutions unbalanced when liquid crystal layer 13 will cause display image.
Particularly, when liquid crystal layer 13 is made of the liquid crystal material with strong polarity, metallic ion 33 with invasive ground by elution in liquid crystal layer 13.Owing to need in the plane switch mode liquid crystal display device, form liquid crystal layer 13 with high-k anisotropy Δ ε material, thus metallic ion 33 with invasive ground by elution in liquid crystal layer 13.
Therefore, all public electrode 26 that contacts with oriented film 31 and pixel electrode 27 preferably by not making with the material that liquid crystal material produces electrochemical reaction, that is, this material and liquid crystal material react hardly.
Fairly obvious, the fact is that the transparency electrode in the liquid crystal display device of TN (twisted-nematic) or STN (supertwist is to row) type is often made by the ITO material, and ITO is very stable in electrochemical reaction, for example in these cases.
Therefore, the public electrode 26 that is formed by ITO and pixel electrode 27 boths can be directly and the contacting of oriented film 31, compare with the liquid crystal display device that pixel electrode forms with the public electrode of material beyond the use ITO, guaranteed that liquid crystal display device 10 reliabilities are improved.
Describe liquid crystal display device 10 in detail according to first embodiment below.The various modes of texturing of liquid crystal display device 10 also will be described in addition, below.
In liquid crystal display device 10, in nearly all zone, public electrode 26 is overlapping by data line 24 fully in liquid crystal display device 10.Preferably, public electrode 26 is at its opposed edge, extend beyond data line 241.5 μ m or bigger along the part of extending in a lateral direction.
The inventor tests, and finds to exceed the length L e[μ m that data line 24 marginal stretches divide along horizontal expansion at public electrode 26], the thickness " d " of second interlayer insulating film 25 and pass relation between the light stroke (light passage) of data line 24 1 sides.
Figure 15 is the sectional view of the liquid crystal display device that experimentizes of inventor.Experiment condition is as follows:
Dielectric constant anisotropy Δ ε=8 of liquid crystal
The refraction coefficient of liquid crystal=0.067
The thickness of liquid crystal layer 13=4.5 μ m
The light transmission of public electrode 26=100% (transparent)
The light transmission of data line 24=0% (opaque)
Distance between public electrode 26 and the pixel electrode 27=10 μ m
Specific inductive capacity=the ε of second interlayer insulating film 25
The thickness of second interlayer insulating film 25 " d "=0.5,1.0 and 2.0 μ m
Under these conditions, experiment is to be to have to carry out when showing black in the white window of black background at screen.Figure 16 shows in this experiment, because the demonstration of white is around revealed the light stroke that electric fields cause from data line 24.Light stroke among Figure 16 carries out integration with the optical transmission rate pair width relevant with pixel and calculates, as shown in figure 15.
Although equal 0.0 in the transmissivity that shows the black time,, owing to the electric field of revealing from data line 24, it still has certain value certainly.As shown in Figure 16, extension Le[μ m] big more, the light stroke is more little.This does not depend on the thickness " d " of second interlayer insulating film 25.
On the other hand, the light stroke in white shows is that the light transmission pair width relevant with pixel when white is shown carries out integration and calculate.Particularly, when white showed, the result of calculation of light stroke equaled 12.The maximum of passing through in data line 24 1 sides allows that the light stroke should be smaller or equal to obtaining 1/100 of light stroke in the pixel when the screen display white.Therefore, the light stroke among Figure 16 must be smaller or equal to 0.12.
In Figure 16, when the light stroke equals 0.12, the extension Le[μ m of public electrode 26] can be used as about 1.5 μ m.Therefore, might be by extension Le[μ m with public electrode 26] be decided to be 1.5 μ m, reduce the maximum of passing through from data line 24 1 sides and allow the light stroke.
In the first embodiment, liquid crystal display device 10 has been designed to include the black basalis 17 that separates with color layer 18.Yet, should be noted that black basalis 17 can be substituted by the sandwich construction of a plurality of color layers 18.
With reference to Figure 17, red color layer 18a, green layer 18b and blue chromatograph 18c are designed to part and overlap each other.Have and deceive basalis 17 identical functions in the part of partly overlapping color layer 18a each other to the color layer 18a at 18c place to 18c.
Do not need to form black basalis 17 to the overlapped method of 18c part by design color layer 18a.18a can form like this to red, green, the blue layer of 18c, realizes overlapping each other of they by changing 18a to the pattern of 18c color layer.Since change 18a to the workload of the pattern of 18c color layer less than forming the workload of deceiving basalis 17, so color layer 18a will strengthen the yield rate of liquid crystal display device 10 to the sandwich construction of 18c.
In order to replace three layers of above-mentioned color layer, can be laminated to each other with the color layer of any two kinds of colors in red, green, the orchid, with replace black basalis 17.
In liquid crystal display device 10, pixel auxiliary electrode 35, the public electrode wire 26a of the upper and lower side of each post that on data line 24 bearing of trends, defines and public electrode wire 26b, can be designed to have such sloping edge as shown in figure 18, if the direction of liquid crystal aligning all is rotated in a clockwise direction with certain acute angle on the whole viewing area that is surrounded by pixel electrode 27 and public electrode 26 shown in Figure 180, make at the frictional direction of determining by friction or the orientation direction of liquid crystal, and pixel electrode 27 (and apply the pixel auxiliary electrode 35 of identical voltage with pixel electrode 27) execute and public electrode 26 (and and public electrode 26 apply the public electrode wire 26a and the 26b of identical voltage) between relation between the direction of the electric field that applies be determined, guaranteed that the direction of the direction of this liquid crystal aligning and this electric field is overlapping.
If a zone is arranged, wherein the liquid crystal aligning direction is by overlapping with the direction of electric field with certain acute angle rotation liquid crystal aligning direction along counter-clockwise direction, then this zone will produce the territory at pixel one end, wherein when electric field was applied on pixel electrode 27 and the public electrode 26, liquid crystal was to rotate in the opposite direction with desirable side.If there is above-mentioned territory, and above-mentioned liquid crystal molecule according to the territory of desired directions rotation and liquid crystal molecule according to and the boundary in the territory of desirable side between rotating in the opposite direction rotate displacement for a long time, then display quality will reduce, and the condition identical with starting condition can not often obtain, and the reliability of liquid crystal display device can reduce as a result.
This reverse rotation of liquid crystal molecule also can prevent, and method is the edge that pixel auxiliary electrode 35 and public electrode 26a and 26b is designed to have inclination, as shown in figure 18.Therefore, in this manual, by being designed to have pixel auxiliary electrode 35 and the public electrode 26a and the 26b of sloping edge, the structure that makes liquid crystal molecule only reverse according to single direction is known as reverse rotation and stops structure.
The layer structure of reverse rotation prevention structure 36 in liquid crystal display device 10 will be described below.
In Figure 19 A, the first metal layer is by the one-tenth shown in the extension line of the inclination that has narrow space, and second metal level is by shown in the extension line of the inclination that has the broad space.Sweep trace 28 and public electrode wire 26a and 26b are made of the first metal layer, and simultaneously, data line 24 and pixel auxiliary electrode 35 are made of second metal level.
Figure 19 B shows each layer that is made of ITO.Public electrode 26 and pixel electrode 27 all are made of ITO.Reverse rotation stops structure 36 to be made into so as shown in Figure 18: on each layer as Figure 19 A shown in, usefulness be sandwiched in therebetween interlayer insulating film and each ply shown in Figure 19 B.
By preventing the molecular axis reverse rotation of liquid crystal molecule, liquid crystal display device 10 has display quality and the reliability of having improved.For example, such as similar electron devices such as the personal computers that uses liquid crystal display device 10, can stop structure 36 prevent the degeneration of display quality by adopting this reverse rotation.
For example, Japanese Patent No. 2973934 (Japanese laid-open patent publication number 10-26767) has proposed the example of a reverse rotation prevention structure.
As shown in figure 20, liquid crystal display device 10 can be designed to be included in the passivating film 37 that forms on second interlayer insulating film 25, and it covers above-mentioned public electrode 26 and pixel electrode 27.Oriented film 31 is formed on the passivating film 37.
As shown in figure 21, if highfield is applied on public electrode 26 and the pixel electrode 27 for a long time, will be in the mistake orientation of public electrode 26 and pixel electrode 27 edges respect to one another generation liquid crystal, the result causes display defect.
Figure 20 shows the passivating film 37 that will weaken the highfield that produces in the edge of public electrode 26 and pixel electrode 27, thereby has avoided the mistake orientation and the display defect of liquid crystal molecule.
In addition, contact hole 39 can be designed to the square-section, and at this moment the minor face of contact hole 39 should be more than or equal to 6 μ m.
The experiment of carrying out according to the inventor, if the length of side of contact hole 39 or minor face less than 6 μ m, suitable electrical connection can not be guaranteed between the upper and lower layer of contact hole 39 passing.
As shown in figure 22, contact hole 39 can cover with metal film 29.Contact hole 39 can also be designed to the inwall with taper, and in this case, contact hole 39 tops are of a size of 6 μ m * 6 μ m.Contact hole 39 can contact with 26b with public electrode wire 26a.All covered metal film 29 on the inwall of contact hole 39a shown in contact hole and Fig. 8 and 39b as shown in Figure 22, and the ITO film 46 that metal film 29 is electrically connected with public electrode 26 covers (consulting Fig. 8).
By on the inwall of contact hole, using metal film 29 to cover contact hole 39, can reduce as the public electrode 26 of transparency electrode formation and the impedance between public electrode wire 26a and the 26b harmony when strengthening the image demonstration.
The thickness of second interlayer insulating film 25 in the liquid crystal display device 10 is for example in the scope of 1 μ m to 2 μ m.
As previously mentioned, second interlayer insulating film 25 in first embodiment is designed to be made by the first film 25a and the second film 26b.As shown in Figure 9, as a kind of alternative method, second interlayer insulating film 25 can be designed to be made of individual layer inorganic or that organic material is made.First film that second interlayer insulating film 25 shown in Fig. 9 is just made by inorganic material constitutes.As shown in Figure 8, as a kind of alternative method, second interlayer insulating film 25 can be designed to first film of being made by inorganic material and cover above-mentioned first film and be made up of second film that organic material is made.
Because the specific inductive capacity of organic membrane less than inoranic membrane, is compared with the interlayer insulating film that is made of the individual layer inoranic membrane, it will reduce the specific inductive capacity of interlayer insulating film the above-mentioned sandwich construction that comprises first and second films.
If interlayer insulating film is made of the individual layer organic membrane, then semiconductor layer in TFT and the interface that covers between the organic membrane of above-mentioned semiconductor layer will be unsettled, in this case, if TFT at high temperature moves, the Leakage Current of TFT will increase, and the result causes the harmony of demonstration poor.Be designed to constitute by first film that will contact, and on first film, form organic layer,, thereby guarantee that the problems referred to above are resolved the interface stability that makes between inoranic membrane and the semiconductor layer by inoranic membrane such as silicon nitride film etc. with the semiconductor layer of TFT.
The example of inoranic membrane and organic membrane sees Table 1.
| Thickness (μ m) | Specific inductive capacity | Form the technology of film | The pattern of film | ||
| Inoranic membrane | SiNx (silicon nitride) | ????1-3 | ??6.4 | Plasma CVD | ????P1 |
| SiNx/SiOx (monox) | ????1/0.5 | ??6.4/4.0 | The plasma CVD sputter | ????P1 | |
| Inorganic polysilazane | ????1-2 | ??4.5 | Spin coating and baking | ????P1 | |
| The inorganic poly-POLYSIL of SiNx/ | ????0.15/1-2 | ??6.4/4.5 | Plasma CVD/spin coating and baking | ????P1 | |
| Inorganic/organic membrane | The SiNx/ photosensitive acrylic resin | ????0.15/1-2 | ??6.4/3.3 | Plasma CVD/spin coating | ????P2 |
| The SiNx/ photosensitive polyimide resin | ????0.15/1-2 | ??6.4/- | Plasma CVD/spin coating | ????P3 | |
| Organic membrane | BCB (benzocyclobutene) | ????1-2 | ??4.5 | Spin coating also bakes | ????P4 |
| Organic polysilazane | ????1-2 | ??3.8 | Spin coating also bakes | ????P4 | |
| Siloxane | ????1-2 | ??- | Spin coating also bakes | ????P4 |
P1=uses the photoresist as mask to carry out dry ecthing.
P2=is by exposure and develop and bake the photosensitive acrylic resin composition.Dry ecthing SiNx.
P3=is by exposure and develop and bake the photosensitive polyimide resin composition.Dry ecthing SiNx.
P4=uses the photoresist as mask to carry out dry ecthing.
As shown in table 1, when second interlayer insulating film 25 was made by the individual layer inoranic membrane, this inoranic membrane can be selected from the silicon nitride film of the silicon nitride film of silicon nitride (SiNx) film, inorganic polysilazanes film, sandwich construction and silicon oxide film, sandwich construction and inorganic polysilazanes film etc.
When second interlayer insulating film 25 was made by the individual layer organic membrane, this organic membrane can be selected from benzocyclobutene (BCB) film, organic polysilazanes film or silicone film etc.
When second interlayer insulating film 25 was designed to have the sandwich construction of first and second films, first film can be selected from silicon nitride film, and second film can be selected from photosensitive acrylic resin film or photosensitive polyimide resin film simultaneously.
Though table 1 points out that the thickness of inoranic membrane is 0.15 μ m in sandwich construction, the thickness of the inoranic membrane in this sandwich construction is not limited to 0.15 μ m.Inoranic membrane in this sandwich construction can be designed to thickness range at 0.1 μ m (containing end value) within the 1.0 μ m.
Even data line 24 and by and the public electrode 26 made of the overlapping transparency electrode of data line 24 between, second film that is made of organic membrane has pin hole, but become more than or equal to 0.25 μ m by Thickness Design with this inoranic membrane, just can be so that possess sufficiently high voltage breakdown as the inoranic membrane of first film, thereby just can be when liquid crystal board be made back or display image, prevent data line 24 and with the overlapping public electrode 26 of data line 24 because dielectric breakdown two short circuit each other of interlayer insulating film, and then significantly reduced because the defective of the data line 24 that the above-mentioned short circuit between data line 24 and public electrode 26 causes.
The thickness that is noted that each film that table 1 shows only is schematically, should not be limited on these concrete thickness.
As shown in figure 23,, be formed on public electrode 26 on second interlayer insulating film 25 and can be designed to sweep trace 28 overlappingly, and between sweep trace 28 and public electrode wire 26a and 26b, leave the space according to the liquid crystal display device 10 of first embodiment.Adopt the public electrode 26 of this structure can shield the electric field that sweep trace 28 is revealed, guarantee to obtain increasing, and improved the percentage of open area of liquid crystal display device 10 by effective viewing area that the electric field that applies on pixel electrode 27 and public electrode 26 is controlled.
Similarly, public electrode 26 can be designed to the raceway groove channel region of TFT30 overlapping.The public electrode 26 that possesses this structure can prevent that outside electric field from entering TFT30, guarantees that the stability of TFT characteristic and the reliability of display image are strengthened.
As shown in figure 24, when observing by the planimetric map of pixel, public electrode wire 26a can form near the lower limb of each pixel.In other words public electrode wire 26a can next-door neighbour sweep trace 28 above the location.
Because public electrode 26 is made by transparent material, so transparent region will increase because of the zone that has public electrode 26 to occupy, has guaranteed the raising of liquid crystal display device 10 percentage of open area.
Scheme as an alternative, as shown in figure 25, when observing by the plane of pixel, public electrode wire 26a can form near the lower limb of each pixel, and public electrode wire 26b can form near the coboundary of each pixel.By forming public electrode wire 26a and 26b near coboundary in each pixel and the lower limb, and forming one of public electrode wire 26a and 26b relatively on each pixel or near the lower limb, can increase memory capacity.
When observing by the planimetric map of pixel, be positioned in the liquid crystal display device of the latter half of each pixel at TFT30, for example according to the liquid crystal display device 10 of first embodiment, when when the planimetric map of pixel is observed, pixel electrode 27 and the drop ply that has defined drain electrode 30a can be electrically connected to each other by near the contact hole 39b each pixel lower limb, and public electrode 26 and public electrode wire 26b can be electrically connected to each other by near the contact hole 39a each pixel coboundary, as shown in figure 26.
When observing by the planimetric map of pixel, be positioned in the liquid crystal display device of the first half of each pixel at TFT30, opposite with liquid crystal display device 10, when when the planimetric map of pixel is observed, pixel electrode 27 and the drop ply that has defined drain electrode 30a can be electrically connected to each other by near the contact hole 39b each pixel coboundary, and public electrode 26 and public electrode wire 26b can be electrically connected to each other by near the contact hole 39a each pixel lower limb, as shown in figure 27.
As mentioned above, be electrically connected to each other by contact hole 39a or 39b in each pixel by making public electrode 26 and public electrode wire 26a and 26b, this might reduce the resulting impedance of public electrode 26.
The method of the liquid crystal display device of making according to first embodiment 10 is further introduced first to the 3rd example below.
Making in first example of liquid crystal display device 10 according to first embodiment, second interlayer insulating film 25 is designed to have the sandwich construction that comprises inoranic membrane and organic membrane, as Figure 28 A to shown in the 28K.In making second example of liquid crystal display device 10, second interlayer insulating film 25 is designed to be made of the individual layer organic membrane, as Figure 29 A to shown in the 29I.In making the 3rd example of liquid crystal display device 10, second interlayer insulating film 25 is designed to be made of the individual layer inoranic membrane, as Figure 30 A to shown in the 30I.
Figure 28 A to 28K, 29A to 29I and 30A in 30I, make TFT zone (being known as " TFT district ") at this, make the zone (being known as " pixel region ") of pixel and the zone (being known as " contact porose area " at this) of the contact hole that forms for public electrode all shows in the drawings at this.TFT district, pixel region and contact porose area and in Figure 10, illustrate by the sectional view of A-A along the line, B-B and C-C respectively.(first example)
Figure 28 A is the sectional view of liquid crystal display device 10 to 28K, and each step of method for making first example of liquid crystal display device 10 of second interlayer insulating film 25 of the sandwich construction that has comprised band inoranic membrane and organic membrane is shown.
At first, shown in Figure 28 A, be formed on the glass substrate as electrical isolation transparency carrier 22 as the chromium layer of the first metal layer,, then, utilize the method for photoetching and dry ecthing the chromium layer to be made the pattern of grid 30c and public electrode wire 26a and 26b.Though in 30I, only show public electrode wire 26b at Figure 28 A,, public electrode wire 26a will illustrate below with public electrode wire 26b, because public electrode wire 26a makes with public electrode wire 26b.
Then, shown in Figure 28 B, first interlayer insulating film 23 forms on whole transparency carrier 22, has covered grid 30c and public electrode wire 26a and 26b.First interlayer insulating film 23 has the sandwich construction of silicon dioxide (SiO2) film and silicon nitride (SiNx) film formation.
Then, shown in Figure 28 C, the amorphous silicon film that is made of a-Si film 32 and n+a-Si film 33 is formed on whole first interlayer insulating film 23.
Shown in Figure 28 D, this a-Si film 32 and n+a-Si film 33 are patterned onto in the island semiconductor layer by the method for photoetching and dry ecthing.
Then, the chromium layer as second metal level is formed on the whole base plate 22.Then, the chromium layer is by the pattern of method formation drain electrode 30a, source electrode 30b, data line 24 and the pixel auxiliary electrode 35 of photoetching and dry ecthing, shown in Figure 28 E.
Subsequently, shown in Figure 28 F, a-Si film 32 and n+a-Si film 33 are on the thickness that spreads all over entire n+a-Si film 33, the contact hole place that forms between the source electrode 30b of drain electrode 30a is etched, and up to certain degree of depth of a-Si film 32, drain electrode 30a and source electrode 30b are as mask,, form the raceway groove of TFT30 thus.
Then, shown in Figure 28 G,, be formed on the whole base plate 22 with the second film 25b by as the silicon nitride film of inoranic membrane and defined the first film 25a of second interlayer insulating film 25.
Then, shown in Figure 28 H, the second film 25b that is made of the photosensitive acrylic resin as organic membrane is formed on the first film 25a.
Shown in Figure 28 I, second film 25b exposure, development with second interlayer insulating film 25, bake then, thus, form the contact hole 39b of the silicon nitride film that arrives first interlayer insulating film 23 on the source electrode 30b, and the contact hole 39a that forms the silicon nitride film that arrives first interlayer insulating film 23 on the public electrode wire 26b.
Shown in Figure 28 J, the first film 25a after the exposure is etched by contact hole 39b, and by contact hole 39a, the first film 25a after the exposure is etched with first interlayer insulating film 23 of the sandwich construction that has silicon oxide film and silicon nitride film, thereby allows contact hole 39a and 39b to arrive source electrode 30b and public electrode wire 26a or 26b respectively.
Then, ITO film 46 is formed on the whole product, make contact hole 39a and 39b within it wall covered by ITO film 46.Then, shown in Figure 28 K, ITO film 46 is by photoetching or etching, thus formation all is made of ITO film 46 in each zone that forms unit pixel public electrode 26 and pixel electrode 27.(second example)
Figure 29 A is the sectional view of liquid crystal display device 10 to 29I, and each step of liquid crystal display device 10 method for makings second example that comprises second interlayer insulating film 25 that is made of the individual layer organic membrane is shown.
At first, shown in Figure 29 A, be formed on the glass substrate as electrical isolation transparency carrier 22, then, utilize the method for photoetching and dry ecthing the chromium layer to be made the pattern of grid 30c and public electrode wire 26a and 26b as the chromium layer of the first metal layer.
Then, shown in Figure 29 B, first interlayer insulating film 23 forms on whole transparency carrier 22, has covered grid 30c and public electrode wire 26a and 26b.First interlayer insulating film 23 has the sandwich construction that is made of silicon dioxide (SiO2) film and silicon nitride (SiNx) film.
Then, shown in Figure 29 C, the amorphous silicon film that is made of a-Si film 32 and n+a-Si film 33 is formed on whole first interlayer insulating film 23.
Shown in Figure 29 D, this a-Si film 32 and n+a-Si film 33 are patterned onto in the island semiconductor layer by the method for photoetching and dry ecthing.
Then, the chromium layer as second metal level is formed on the whole product.Then, the chromium layer is by the pattern of method formation drain electrode 30a, source electrode 30b, data line 24 and the pixel auxiliary electrode 35 of photoetching and dry ecthing, shown in Figure 29 E.
Subsequently, shown in Figure 29 F, this a-Si film 32 and n+a-Si film 33 are on the thickness that spreads all over entire n+a-Si film 33, the contact hole place that forms between the source electrode 30b of drain electrode 30a is etched, certain degree of depth up to a-Si film 32, drain electrode 30a and source electrode 30b form the raceway groove of TFT30 thus as mask.
Then, shown in Figure 29 G, second interlayer insulating film 25 that is made of the individual layer photosensitive acrylic resin film as organic membrane is formed on the whole described product.
Then, shown in Figure 29 H, to expose by second interlayer insulating film 25 that individual layer photosensitive acrylic resin film constitutes and develop, thus, form contact hole 39b that arrives source electrode 30b and the contact hole 39a that arrives first interlayer insulating film 23 on public electrode wire 26a or the 26b.
Then, by first interlayer insulating film 23 after the contact hole 39a etching exposure, thereby, contact hole 39a is extended to public electrode wire 26a or 26b.
Shown in Figure 29 I, ITO film 46 is formed on the whole product, make contact hole 39a and 39b within it wall covered by ITO film 46.Then, ITO film 46 is by photoetching or etching, thus public electrode 26 and pixel electrode 27 that formation all is made of ITO film 46.(the 3rd example)
Figure 30 A is the sectional view of liquid crystal display device 10 to 30I, shows each step of liquid crystal display device 10 method for makings the 3rd example that comprises second interlayer insulating film 25 that is made of the individual layer inoranic membrane.
At first, shown in Figure 30 A, be formed on the glass substrate as electrical isolation transparency carrier 22, then, utilize the method for photoetching and dry ecthing the chromium layer to be made the pattern of grid 30c and public electrode wire 26a and 26b as the chromium layer of the first metal layer.
Then, shown in Figure 30 B, first interlayer insulating film 23 forms on whole transparency carrier 22, has covered grid 30c and public electrode wire 26a and 26b.First interlayer insulating film 23 has the sandwich construction that is made of silicon dioxide (SiO2) film and silicon nitride (SiNx) film.
Then, shown in Figure 30 C, the amorphous silicon film that is made of a-Si film 32 and n+a-Si film 33 is formed on whole first interlayer insulating film 23.
Shown in Figure 30 D, this a-Si film 32 and n+a-Si film 33 are patterned onto in the island semiconductor layer by the method for photoetching and dry ecthing.
Then, the chromium layer as second metal level is formed on the whole product.Then, the chromium layer is by the pattern of method formation drain electrode 30a, source electrode 30b, data line 24 and the pixel auxiliary electrode 35 of photoetching and dry ecthing, shown in Figure 30 E.
Subsequently, shown in Figure 30 F, this a-Si film 32 and n+a-Si film 33 are on the thickness that spreads all over entire n+a-Si film 33, the contact hole place that forms between the source electrode 30b of drain electrode 30a is etched, certain degree of depth up to a-Si film 32, at this, drain electrode 30a and source electrode 30b form the raceway groove of TFT30 thus as mask.Then, shown in Figure 30 G, be formed on the whole described product by second interlayer insulating film 25 that constitutes as individual layer silicon nitride film as inoranic membrane.
Then, shown in Figure 30 H, will carry out photoetching, thus, form contact hole 39a and 39b by second interlayer insulating film 25 that the individual layer silicon nitride film constitutes.Then, by contact hole 39a etching first interlayer insulating film 23, thereby contact hole 39b arrives source electrode 30b, and contact hole 39a arrives public electrode wire 26a and 26b.
Shown in Figure 30 I, ITO film 46 is formed on the whole product, make contact hole 39a and 39b within it wall covered by ITO film 46.Then, ITO film 46 is by photoetching or etching, thus public electrode 26 and pixel electrode 27 that formation all is made of ITO film 46.
By realizing first, second or the 3rd example of above-mentioned liquid crystal display device 10 method for makings, sweep trace end, data line end and public electrode thread end all form at TFT district, pixel region with around contacting porose area.Introduce the formation step in these zones below.
Figure 31 shows the layout of sweep trace 28, data line 24 and the public electrode wire 26a and the 26b of liquid crystal display device 10, and Figure 32 show sweep trace end 41c, data line end 41d in the liquid crystal display device 10 and public electrode thread end 41e between the position relation.Figure 32 show in each pixel near form the lower limb public electrode wire 26a and the layout of 26b, as shown in figure 25.
Referring to Figure 31, sweep trace 28 extends horizontally near the lower limb in each pixel, and public electrode wire 26a directly extends on the sweep trace 28 and be parallel with it, and public electrode wire 26b extends horizontally near the coboundary in each pixel.Sweep trace 28 and public electrode wire 26a and 26b constitute by the first metal layer.In Figure 31, data line 24 extends along the boundary vicinity between each pixel, perpendicular to sweep trace 28 and public electrode wire 26a and 26b.Data line 24 is made of second metal level. Public electrode wire 26a and 26b are electrically connected to each other outside the pixel region with the pixel of arranged.
With reference to Figure 32, public electrode thread end 41e and sweep trace end 41c are positioned at the left side of pixel region outside, and data line end 41d is positioned at the top of pixel region outside.Public electrode thread end 41e, sweep trace end 41c and data line end 41d are formed together with contact hole 39e, 39c and 39d respectively.Contact hole 39e, 39c and 39d are covered by ITO respectively, have covered 38e, 38c and 38d respectively.
The following describes three examples making liquid crystal display device 10 methods.In first example, second interlayer insulating film 25 is designed to include the sandwich construction of inoranic membrane and organic membrane, as Figure 33 A to shown in the 33J.In second example, second interlayer insulating film 25 is designed to be made of the individual layer organic membrane, as Figure 34 A to shown in the 34I.In the 3rd example, second interlayer insulating film 25 is designed to be made of the individual layer inoranic membrane, as Figure 35 A to shown in the 35H.
Figure 33 A to 33J, 34A to 34I and 35A in 35H, public electrode thread end 41e, sweep trace end 41c and data line end 41d all represent with independent figure.Public electrode thread end 41e and sweep trace end 41c illustrate on the sectional view by D-D along the line among Figure 32, and data line end 41d illustrates on the sectional view by E-E along the line among Figure 32.(first example)
Figure 33 A is the sectional view of liquid crystal display device 10 to 33J, shows each step that comprises with method for making first example of the liquid crystal display device 10 of inoranic membrane and organic film formed second interlayer insulating film 25 with sandwich construction.
At first, shown in Figure 33 A, be formed on the glass substrate as electrical isolation transparency carrier 22 as the chromium layer of the first metal layer, then, utilize the method for photoetching and dry ecthing the chromium layer to be made the pattern of public electrode wire 26a and 26b, sweep trace 28 and public electrode thread end 41e and sweep trace end 41c.
Although only show public electrode wire 26b at Figure 33 A to 33H, following we still describe public electrode wire 26a with public electrode wire 26b, because public electrode wire 26a forms with public electrode wire 26b.
Then, shown in Figure 33 B, first interlayer insulating film 23 forms on whole transparency carrier 22, has covered public electrode wire 26a and 26b and sweep trace 28.First interlayer insulating film 23 has the sandwich construction that is made of silicon dioxide (SiO2) film and silicon nitride (SiNx) film.
Then, shown in Figure 33 C, amorphous silicon film a-Si film 32 is formed on whole first interlayer insulating film 23.
Shown in Figure 33 D, n+a-Si film 33 whole being formed on the a-Si film 32.
This a-Si film 32 and n+a-Si film 33 are patterned onto in the island semiconductor layer by the method for photoetching and dry ecthing.
Then, a-Si film 32 and n+a-Si film 33 are patterned onto (for example, referring to Figure 28 D) in the island.Then, be formed on the substrate 22, covered island shape a-Si film 32 and n+a-Si film 33 as the chromium layer of second metal level.
Then, shown in Figure 33 E, the chromium layer forms the pattern of data line 24 at data line end 41d by the method for photoetching and dry ecthing.
Shown in Figure 33 F, by as inoranic membrane and defined the first film 25a that the silicon nitride film of second interlayer insulating film 25 constitutes, be formed on whole first interlayer insulating film 23 with the second film 25b, covered data line 24.
Shown in Figure 33 G, the second film 25b that is made of the photosensitive acrylic resin as organic membrane is formed on the first film 25a.
Shown in Figure 33 H, second film 25b etched formation contact hole 39e and the 39c of second interlayer insulating film 25, in public electrode thread end 41e and sweep trace end 41c, the both has reached at public electrode wire 26a and 26b and the first film 25a above the sweep trace 28, and further in the 41d of data line end, on data line 24, form the contact hole 39d that arrives the first film 25a.
Shown in Figure 33 I, etched by the first film 25a after contact hole 39e, 39c and 39d and 23 exposures of first interlayer insulating film by contact hole 39e, 39c and 39d, make contact hole 39e, 39c and 39d can arrive public electrode wire 26b, sweep trace 28 and data line 24 respectively.
Then, ITO film 46 is formed on the whole product, make contact hole 39e, 39c and 39d within it wall covered by ITO film 46.Then, shown in Figure 33 J, ITO film 46 is formed pattern by photoetching and etching, makes ITO film 46 electrically contact at bottom and public electrode wire 26b, sweep trace 28 and the data line 24 of contact hole 39e, 39c and 39d respectively.(second example)
Figure 34 A is the sectional view of liquid crystal display device 10 to 34I, shows each step of method for making second example that comprises second interlayer insulating film, 25 liquid crystal display devices 10 that are made of the individual layer organic membrane.
At first, shown in Figure 34 A, be formed on the glass substrate as electrical isolation transparency carrier 22 as the chromium layer of the first metal layer, then, utilize the method for photoetching and dry ecthing the chromium layer to be made the pattern of public electrode wire 26a and 26b, sweep trace 28 and public electrode thread end 41e and sweep trace end 41c.
Then, shown in Figure 34 B, first interlayer insulating film 23 forms on whole transparency carrier 22, has covered public electrode wire 26a and 26b and sweep trace 28.First interlayer insulating film 23 has the sandwich construction that is made of silicon dioxide (SiO2) film and silicon nitride (SiNx) film.
Then, shown in Figure 34 C, amorphous silicon film (a-Si) film 32 whole being formed on first interlayer insulating film 23.
Shown in Figure 34 D, n+a-Si film 33 whole being formed on the a-Si film 32.
Then, a-Si film 32 and n+a-Si film 33 are patterned onto (for example, referring to Figure 28 D) in the island.Then, be formed on the substrate 22, covered island shape a-Si film 32 and n+a-Si film 33 as the chromium layer of second metal level.
Then, shown in Figure 34 E, the method for chromium layer by photoetching and dry ecthing forms the pattern of data line 24 at data line end 41d.
Shown in Figure 34 F, the second interlayer insulating film film 25 that is made of the photosensitive acrylic acid resin as organic membrane is formed on whole first interlayer insulating film 23, has covered data line 24.
Shown in Figure 34 G, second interlayer insulating film, 25 etched formation contact hole 39e and 39c, in public electrode thread end 41e and sweep trace end 41c, the both has reached at public electrode wire 26a and 26b and the first interlayer insulating film film 23 above the sweep trace 28, and further forms the contact hole 39d that arrives data line 24 in the 41d of data line end.
Shown in Figure 34 H, etched by first interlayer insulating film 23 that contact hole 39e, 39c and 39d expose by contact hole 39e, 39c and 39d, thereby allow contact hole 39e to arrive public electrode wire 26a and 26b, and further allow contact hole 39c to arrive sweep trace 28.
Then, ITO film 46 is formed on the whole product, make contact hole 39e, 39c and 39d within it wall covered by ITO film 46.Then, shown in Figure 34 I, ITO film 46 is formed pattern by photoetching and etching, makes ITO film 46 electrically contact at the bottom of contact hole 39e, 39c and 39d and public electrode wire 26a and 26b, sweep trace 28 and data line 24 respectively.(the 3rd example)
Figure 35 A is the sectional view of liquid crystal display device 10 to 35H, shows each step of method for making the 3rd example of the liquid crystal display device 10 that comprises second interlayer insulating film 25 that is made of the individual layer inoranic membrane.
At first, shown in Figure 35 A, be formed on the glass substrate as electrical isolation transparency carrier 22 as the chromium layer of the first metal layer, then, utilize the method for photoetching and dry ecthing the chromium layer to be made the pattern of public electrode wire 26a and 26b, sweep trace 28 and public electrode thread end 41e and sweep trace end 41c.
Then, shown in Figure 35 B, first interlayer insulating film 23 forms on whole transparency carrier 22, has covered public electrode wire 26a and 26b and sweep trace 28.First interlayer insulating film 23 has by silicon dioxide (SiO
2) sandwich construction that constitutes of film and silicon nitride (SiNx) film.
Then, shown in Figure 35 C, amorphous silicon film (a-Si) film 32 whole being formed on first interlayer insulating film 23.
Shown in Figure 35 D, n+a-Si film 33 whole being formed on the a-Si film 32.
Then, a-Si film 32 and n+a-Si film 33 are patterned onto (for example, referring to Figure 28 D) in the island.Then, be formed on the substrate 22, covered island shape a-Si film 32 and n+a-Si film 33 as the chromium layer of second metal level.
Then, shown in Figure 35 E, the chromium layer forms the pattern of data line 24 at data line end 41d by the method for photoetching and dry ecthing.
Shown in Figure 35 F, the second interlayer insulating film film 25 that is made of the silicon nitride film as inoranic membrane is formed on whole first interlayer insulating film 23, has covered data line 24.
Shown in Figure 35 G, second interlayer insulating film, 25 etched formation contact hole 39e and 39c, in public electrode thread end 41e and sweep trace end 41c, the both has reached at public electrode wire 26a and 26b and the first interlayer insulating film film 23 above the sweep trace 28, and further forms the contact hole 39d that arrives data line 24 in the 41d of data line end.
Then, etched by first interlayer insulating film 23 that contact hole 39e, 39c and 39d expose by contact hole 39e, 39c and 39d, thus allow contact hole 39e to arrive public electrode wire 26a and 26b, and further allow contact hole 39c to arrive sweep trace 28.
Then, shown in Figure 35 H, ITO film 46 is formed on the whole product, make contact hole 39e, 39c and 39d within it wall covered by ITO film 46.Then, ITO film 46 is formed pattern by photoetching and etching, makes ITO film 46 electrically contact at the bottom of contact hole 39e, 39c and 39d and public electrode wire 26a and 26b, sweep trace 28 and data line 24 respectively.Second embodiment
Figure 36 and 37 shows the plane switch mode liquid crystal display device 80 according to second embodiment of the present invention.Figure 36 is the planimetric map of liquid crystal display device 80, and Figure 37 is the sectional view of Figure 36 along the XXXVII-XXXVII line.
Structure according to the plane switch mode liquid crystal display device 80 of second embodiment is different from the liquid crystal display device 10 according to first embodiment 10 shown in Fig. 4 and Fig. 5, difference is that the latter's pixel electrode 27 is not to form on the second film 25b of second interlayer insulating film 25, but on first interlayer insulating film 23, form, and its pixel electrode 27 is to be made of second metal level.
Because pixel electrode 27 is made of second metal level 27, so liquid crystal display device 80 is lower than the percentage of open area of liquid crystal display device 10.Yet,,, guaranteed the raising of the rate that manufactures a finished product so pixel electrode 27 and public electrode 26 each other can short circuits because the layer of the formation pixel electrode 27 in second embodiment is different with the cambium layer of public electrode 26.The 3rd embodiment
Figure 38 and 39 shows the plane switch mode liquid crystal display device 85 according to the 3rd embodiment of the present invention.Figure 38 is the planimetric map of liquid crystal display device 85, and Figure 39 is the sectional view of Figure 38 along the XXXIX-XXXIX line.
As shown in figure 39, in plane switch mode liquid crystal display device 85 according to the 3rd embodiment, the first film 25a that constitutes second interlayer insulating film 25 with the second film 25b is formed in the whole pixel region, and the second film 25b only forms below public electrode 26.
In the viewing area of pixel, public electrode 26 is made of the first metal layer that forms grid, and is overlapping at zone and data line 24 except the zone of the public electrode 26 that is made of transparent metal.
According to the 3rd embodiment, no longer need in exceeding the large tracts of land of needs, form the second film 25b, therefore, can prevent the increase that the parasitism between public electrode 26 and data line 24 holds.
Because public electrode 26 is to be made of the first metal layer in the zone except the zone of the public electrode that is made of transparent metal film 26 that forms on the second film 25b, so want beguine low according to the percentage of open area of the plane switch mode liquid crystal display device 10 of first embodiment according to the plane switch mode liquid crystal display device 85 of the 3rd embodiment.Yet,,, guaranteed the raising of the rate that manufactures a finished product so public electrode 26 and pixel electrode 27 can not be short-circuited each other because public electrode 26 is made of the layer that is different from the layer that forms pixel electrode 27.The 4th embodiment
Figure 40 and 41 shows the plane switch mode liquid crystal display device 100 according to the 4th embodiment of the present invention.Figure 40 is the planimetric map of liquid crystal display device 100, and Figure 41 is the sectional view of Figure 40 along the XXXXI-XXXXI line.In Figure 64, TFT district, pixel region and to contact porose area all be by independent illustrating.And along the line A-A, XXXXI-XXXXI show TFT district, pixel region respectively with C-C and contact the sectional view of porose area in Figure 40.
As shown in figure 41, liquid crystal display device 100 by active device substrate 111, counter substrate 112 and be clipped in active device substrate 111 and counter substrate 112 between liquid crystal layer 113 constitute.
The black basalis 117 of the light tight film of conduct that counter substrate 112 comprises electrical isolation transparency carrier 116, form on the first surface of electrical isolation transparency carrier 116, the color layer 118 that on the first surface of electrical isolation transparency carrier 116, forms, this color layer 118 is partly overlapping with black basalis 117, and the transparent coating 119 that covers black basalis 117 and color layer 118.
Counter substrate 112 further is included in the conductive transparent layer 115 on the second surface of electrical isolation transparency carrier 116, plays that to prevent that the electric charge that produces when LCD panel contacts with other materials from producing film on liquid crystal layer 113 loud.
Active-matrix substrate 111 comprises electrical isolation transparency carrier 122, on electrical isolation transparency carrier 122, form and defined the first metal layer of sweep trace 128 and grid 130c, first interlayer insulating film 123 that on electrical isolation transparency carrier 122, forms, the island type amorphous silicon film that on first interlayer insulating film 123, forms, data line 124 and thin film transistor (TFT) (TFT) 130 have been defined, second metal level of source electrode 130b and drain electrode 130a, the first film 125a that on first interlayer insulating film 23, forms, the second film 125b that on the first film 125a, forms, and the public electrode 26 and the pixel electrode 27 that on the second film 125b, form as transparency electrode.
Island type amorphous silicon film has the sandwich construction of the n+a-Si film 133 that has comprised a-Si film 132 and formed on a-Si film 132.
The first and second film 125a and 125b have constituted second electrical insulating film 125.
Active-matrix substrate 111 further is included in data line 124 and is formed on pixel auxiliary electrode 135 on first interlayer insulating film 123.Data line 124 and pixel auxiliary electrode 135 are made of second metal level.
Though do not illustrate, but be clipped in the thickness that pad between active device substrate 111 and the counter substrate 112 can guarantee liquid crystal layer 113, and seal around the liquid crystal layer between active device substrate 111 and counter substrate 112, avoid the leakage of liquid crystal molecule.
As shown in figure 40, active base plate 111 comprise transmission of data signals data line 24, to its apply reference voltage public electrode 26, the pixel electrode 27 relevant with the pixel of wanting displayed image, provide the sweep trace 28 and the thin film transistor (TFT) (TFT) 130 of sweep signal to it.
Thin film transistor (TFT) 130 comprises grid 130c, drain electrode 130a and source electrode 130b.Thin film transistor (TFT) 130 is positioned near sweep trace relevant with pixel 128 and data line 124 point of crossing.
In plane switch mode liquid crystal display device 100, the electric field that produces between public electrode 126 and pixel electrode 127 is parallel to the electrical isolation transparency carrier 116 and 122 in the pixel, this pixel be by the sweep signal of sweep trace 128 transmission selected, and will write wherein by data line 124 data signals transmitted.Therefore, the direction of an electric field that is produced depends on the direction of public electrode 126 and pixel electrode 127 bendings.
As shown in figure 40, the occupied zone of pixel is divided into the first pixel subarea and the second pixel subarea, and this depends on the bending direction of public electrode 126 and pixel electrode 127,, is applied to the direction of the electric field on public electrode 126 and the pixel electrode 127 that is.In the first and second pixel subareas, the director of liquid crystal molecule be along with according to the rotation of the opposite direction of the electric field that in the plane that is parallel to active device substrate 111 surfaces, applies,, with displayed image.In other words, the liquid crystal display device 100 according to the 4th embodiment is called as the multiple domain type.
The direction of an electric field that applies on public electrode 126 and pixel electrode 127 changes, and this depends on the area between them.Specifically, the occupied zone of the pixel director that can be divided into liquid crystal molecule according to the director of right handed first pixel subarea and liquid crystal molecule according to the second pixel subarea of rotation counterclockwise.The pixel subarea can be called the territory.
In the first and second pixel subareas, be designed to reverse rotation each other by each director with liquid crystal molecule, the first and second pixel subareas can obtain optical compensation mutually.Therefore, can prevent that color from appearring in image when inclination is watched, and further prevent the counter-rotating of the degradation that between black display and quite black medium tone, takes place, guarantee that viewing angle characteristic is strengthened.
In liquid crystal display device 100, both constitute public electrode 126 and pixel electrode 127 by ITO, and it is a kind of in the transparent material.
As shown in figure 41, public electrode 126 is formed on the aspect except the aspect that forms data line 124, with first embodiment similarly be in addition, public electrode 126 fully and data line 124 overlapping.
As shown in figure 40, public electrode 126 is electrically connected with public electrode wire 126a or 126b by contact hole 139a (consulting Figure 61), and pixel electrode 127 is electrically connected with source electrode 130b by contact hole 139b (consulting Figure 61).
Be designed to have width with the width of the overlapping black basalis 117 of data line 124 less than public electrode 126.
And the part of the overlapping public electrode 126 of data line 124 and near the part between the pixel electrode 127 of this part on light tight film is arranged.
With first embodiment similarly, overlapping on the whole length at the black basalis 117 that forms on the data line 124 with data line 124 along it.
In addition, as shown in figure 40, the data line 124 in the liquid crystal display device 100 is designed in a zigzag.
In other words, have the structure identical according to the liquid crystal display device 100 of the 4th embodiment with the liquid crystal display device 10 of first embodiment, except liquid crystal display device 100 belongs to the multiple domain type, and public electrode 126, pixel electrode 127 and data line 124 all are in a zigzag.
What " in a zigzag " mentioned in the 4th embodiment not only represented is a kind of shape of linear segment, all be that relatively vertically Z tilts shown in Figure 43 A, and this shape had both comprised relatively vertically first linear segment of Z inclination, comprised again and be parallel to second linear segment that vertical Z extends, wherein first and second linear segments can alternately connect each other, shown in Figure 43 B.In other words, so-called " word " comprised that all alternately repeat the shape that tilts about vertically along it, rather than extends along its length.Whether " word " has comprised not relation of the linear segment that longitudinally extends in parallel.Second linear segment can not be subjected to the restriction of concrete angle with respect to the angle of fore-and-aft tilt, there is no need in addition second linear segment is set at constant with respect to the angle of inclination of vertical Z yet.
Liquid crystal display device 100 according to the 4th embodiment provides the advantage that possesses with the first embodiment liquid crystal display device 10 identical advantage.
Figure 44 is the planimetric map of a liquid crystal display device 201, comprises linear data line, linear public electrode and linear pixel electrode.Figure 45 is according to the sectional view of Figure 44 along the intercepting of XXXXV-XXXXV line.
Figure 44 shows each electrode and constitutes the miscellaneous part of liquid crystal display device 201, and its size is as follows.Size applying unit cited below is a micron (μ m), except as otherwise noted.
The width of data line 24=10
Be located immediately at width=19 of the public electrode 26 of data line 24 tops
Width=3.5 of other public electrodes 26 that on the aspect that the public electrode 26 that is located immediately at above the data line 24 forms, form
The width of pixel electrode 27=3.5
Distance=9.5 between public electrode 26 and the pixel electrode 27
Therefore, the computing method of the opening total area A1 in the liquid crystal display device shown in Figure 44 201 are as follows:
A1=(9.5 * 6) * L=57L wherein L represents the longitudinal length of opening.
Figure 46 is the planimetric map of liquid crystal display device 202, comprises linear data line, zigzag public electrode and zigzag pixel electrode, and Figure 47 is the sectional view of XXXXVII-XXXXVII intercepting along the line among Figure 46.
The size of the miscellaneous part of the liquid crystal display device 202 that each electrode and formation are shown in Figure 46 is as follows:
The width of data line 124=10
Be located immediately at width=26.5 of the public electrode 126 of data line 124 tops
Width=3.5 of other public electrodes 126 that on the aspect that the public electrode 126 that is located immediately at above the data line 124 forms, form
The width of pixel electrode 127=3.5
Distance=8.2 between public electrode 126 and the pixel electrode 127
Therefore, the computing method of the opening total area A2 in the liquid crystal display device shown in Figure 46 202 are as follows:
A2＝(8.2×6)×L＝49.2L
Figure 48 is the planimetric map of liquid crystal display device 203, comprise data line, zigzag public electrode and zigzag pixel electrode in a zigzag, promptly according to the planimetric map of the liquid crystal display device 10 of first embodiment, Figure 49 is the sectional view of XXXXIX-XXXXIX intercepting along the line among Figure 48.
The size of the miscellaneous part of each electrode among Figure 48 and formation liquid crystal display device 203 is as follows:
The width of data line 124=10
Be located immediately at width=19 of the public electrode 126 of data line 124 tops
Width=3.5 of other public electrodes 126 that on the aspect that the public electrode 126 that is located immediately at above the data line 124 forms, form
The width of pixel electrode 127=3.5
Distance=9.5 between public electrode 126 and the pixel electrode 127
Therefore, the computing method of the opening total area A3 in the liquid crystal display device shown in Figure 48 203 are as follows:
A3＝(9.5×6)×L＝57L
More above-mentioned A1, A2 and A3 area can be found out fairly obviously, linear data line, public electrode and the area A 2 of the liquid crystal display device 202 of pixel electrode is than the area A 1 of the liquid crystal display device 201 that has comprised linear data line, linear public electrode and linear pixel electrode littler have in a zigzag in a zigzag been comprised, yet, comprised that the area A 3 of the liquid crystal display device 203 of data line, zigzag public electrode and zigzag pixel electrode equals area A 1 in a zigzag.
This just means that data line 124 is designed to zigzag relatively can increase percentage of open area with the liquid crystal display device that comprises the linear data line.This be because, in the liquid crystal display device 202 that comprises linear data line, flexuose public electrode and flexuose pixel electrode, in Figure 46 between the data line 124 on the left side and near the pixel electrode data line 124 127 distance of XXXXVII-XXXXVII along the line than the big 7.5 μ m among Figure 48, therefore the length of 7.5 μ m/X can be reduced in the gap between public electrode 126 and the pixel electrode 127, X represents opening number, and therefore aperture area reduces as a result.
According to the liquid crystal display device 100 of the 4th embodiment can with make according to the identical method of the method for the liquid crystal display device of making 10 of first embodiment.Particularly, because data line 124, public electrode 126 and pixel electrode 127 in the liquid crystal display device 100 all are to form with zigzag manner, the composition that forms them changes to some extent, so that define flexuose data line 124, flexuose public electrode 126 and flexuose pixel electrode 127.Except the step that forms data line 124, public electrode 126 and pixel electrode 127 patterns, the step of making liquid crystal display device 100 does not change.
The following describes the each several part and the distortion thereof of the liquid crystal display device that constitutes according to the 4th embodiment.
The inflection number of the data line 124 in each pixel, public electrode 126 and pixel electrode 127 can be selected from any numerical value, as long as it is an odd number.Guarantee that like this zone that liquid crystal molecule twists in a clockwise direction equals liquid crystal molecule according to the zone of counterclockwise twisting on quantity and area.Strengthened the symmetry at visual angle like this.Therefore, the inflection number can be restricted to odd number value, and for example 1,3 or 5.As long as the inflection value is an odd number value, 1 or can be elected to be the inflection number of data line 124, public electrode 126 and pixel electrode 127 arbitrarily more than or equal to 3 numeral.
The inflection value is more little, and percentage of open area is high more, yet the inflection value is more little, and bending pattern is easy more to be seen.In addition, because black basalis 117 is designed to follow the inflection value of data line 124, public electrode 126 and pixel electrode 127, so if the inflection value of data line 124, public electrode 126 and pixel electrode 127 is very little, it will be very difficult that black basalis 117 is carried out composition.
On the contrary, the inflection value is big more, and bending pattern is easy more to be counted as a line, and black basalis can be made with the form of very thin line.Yet the inflection value is big more, and percentage of open area is more little.
Based on above-mentioned situation, the inventor tests, in the hope of obtaining the best inflection value N in data line 124, public electrode 126 and the pixel electrode 127.As long as satisfy following inequality (A), just can determine optimum value N:
30≤L/ (N+1)≤40 (A) wherein L represents the perforate long measure for micron (μ m), consults Figure 42 A.
As shown in figure 50, when when planimetric map is watched, preferably distance between the right-hand member of the left end of black basalis 117 and data line 124 and the distance between black basalis 117 right-hand members and data line 124 left ends are always more than or equal to 4 microns (μ m).
Its reason of explained later.
In the face of black basalis 117 surface of liquid crystal layer 113 and in the face of the distance between the surface of the data line 124 of liquid crystal layer 113 usually in 3 to 4 microns scope.With reference to Figure 50, suppose that the angle that forms is expressed as " α " between the line of black basalis 117 left ends that are connected to data line 124 right-hand members and substrate surface, then the incident light from black basalis one side is all reflected with angle [alpha], and its angle [alpha] approximates 45 degree greatly.Therefore, when be maximum in the face of the surface of the black basalis 117 of liquid crystal layer 113 with in the face of the distance between the surface of the data line 124 of liquid crystal layer 113, when promptly equaling 4 microns, if the distance between the left end of black basalis 117 and the right-hand member of data line 124 is more than or equal to 4 microns, near the light that might solve tilts enters data line 124 1 ends passes black basalis 117, and cause the color mixture in the displayed image, the result that the result causes dyeability to reduce.
In order to guarantee distance between the left end of the right-hand member of distance between the right-hand member of the left end of black basalis 117 and data line 124 and black basalis 117 and data line 124 always more than or equal to 4 microns, black basalis 117 and data line 124 should overlap each other 4 microns or more in all places.Because active device substrate 111 and counter substrate 112 are designed to 4 microns admissible tolerance usually, so that absorb the not positive situation of coupling, if consider 4 microns tolerance, the width that just needs black basalis 117 and data line 124 is more than or equal to 8 microns.
Figure 51 and 52 shows the example according to the layout of the black basalis 117 in the 4th embodiment liquid crystal display device 100.
In the layout shown in Figure 51, data line 124 is designed to 10 microns width, the width of public electrode 126 is designed to 19 microns, and the public electrode 126 that has a large amount of broach is designed to have 7 times inflection value, and black basalis 117 is designed to have 13.5 microns width.
The minimum widith that black basalis 117 and data line 124 overlap each other is at public electrode 126 or data line 124 crooked parts, promptly online X-X place.In the shown layout of Figure 51, black basalis 117 and data line 124 overlapped minimum widiths equal 8 microns.
In the shown layout of Figure 52, it is 10 microns that data line 124 is designed width, and it is 19 microns that public electrode 126 is designed width, and the public electrode 126 that has a large amount of broach is designed to have 5 times inflection value, and black basalis 117 to be designed width be 16 microns.
According to the minimum widith of the black basalis 117 in the liquid crystal display device 100 of the 4th embodiment, for example the above-mentioned minimum widith in the layout is determined as follows shown in Figure 51 and Figure 52.
Figure 53 shows the position relation between black basalis 117, data line 124 and the public electrode 126.With reference to Figure 53, determine that the equation of black basalis 117 minimum widiths is determined as follows.
The width means of tentation data line 124 is " D ", when the direction projection that extends along data line 124, the lengths table of oblique line is shown " LS ", the angle that forms between direction that data line 124 extends and the oblique line is expressed as " θ ", and the black basalis 117 minimum widith Dmin that the light that does not allow to tilt enters data line 124 are expressed as:
Dmin＝D+LS×tanθ-(D-8)×2[μm]?????????????(B)
In the example shown in Figure 54 and 55, data line 124 design width are 10 microns, and further are designed in a zigzag, comprise the linear segment that extends along vertical Z of data line 124, shown in Figure 43 B.The edge of the data line 124 shown in Figure 54 and 55 is arranged in from the bottom of each recess of 124 inflection of the data line shown in Figure 52 and retreats 3 microns places.Compare with the situation of the same race shown in Figure 52, the edge that public electrode 126 is limited by recess exceeds 124 4.5 microns of data lines, and with projection position same position upper process as the shown public electrode of Figure 52 edge.Be designed to zigzag with the public electrode 126 of a lot of broach with five inflection.Under these conditions, black basalis 117 can have 10 microns width.The overlapped width of black basalis 117 and data line 124 that is to say online X-X place in public electrode 126 or data line 124 knee minimums.In the example shown in Figure 54 and 55, black basalis 117 and data line 124 overlapped minimum widiths equal 8 microns.
Compare with the example shown in Figure 52, black basalis 117 can reduce to width 6 microns, has guaranteed the percentage of open area increase.
The public electrode 126 overlapping with data line 124 has the edge that exceeds 124 4.5 microns of data lines, and this edge is designed to V-shape at the top, so that apply enough voltage to the viewing area.
As previously shown, the black basalis 117 minimum widith Dmin that do not allow oblique light to enter data line 124 is expressed by following formula:
Dmin＝D+LS×tanθ-(D-8)×2[μm]???????????(B)
In the example of the black basalis 117 shown in Figure 54 and 55, the edge of data line 124 is designed to, counting from the bottom of the 124 inflection recesses of the data line shown in Figure 52,3 microns have been replaced to the outside of data line 124, simultaneously, at the top of data line 124 revers turn part projections, data line 124 has inwardly been replaced 3 microns, so that form the linear segment along data line 124 longitudinal extensions.
Interchangeablely be, shown in Figure 53, only can be outwards, the data line 124 inflection concave bottom that never are replaced count with 3 microns replacement data lines 124 in the 124 revers turn part center dants of the data line shown in Figure 52 bottom.
In above-mentioned this layout, with the example class shown in Figure 54 and 55 seemingly, black basalis 117 can be designed to have 10 microns width, has guaranteed the increase of percentage of open area.
Shown in Figure 56, data line 124 forms in the mode identical with the data line shown in Figure 52, and floating electrode 181 may form near the concave bottom of data line 124 revers turn parts.Floating electrode 181 can be made of the first metal layer that constitutes public electrode 126.This floating electrode 181 can be used for shielding the light from zone shown in Figure 53, in this case, example class is shown seemingly with Figure 54 and 55, and black basalis 117 can be designed to have 10 microns width, has guaranteed the increase of percentage of open area.
In addition, as shown in Figure 57, public electrode 126 can be designed to further to comprise from the outstanding projection 182 in revers turn part top of the overlapping public electrode 126 of data line 124.
Pixel shown in Figure 58 has comprised the above-mentioned public electrode 126 that has projection 182.In the pixel that illustrates, projection 182 is fixed on the border, territory that comprises projection 182 tops and rotates on the position of displacement, has guaranteed the stability of displayed image, even display screen is pointed shake-up.
In the liquid crystal display device 100 according to the 4th embodiment, the color layer 118 that constitutes counter substrate 112 can be designed to the zig-zag type the same with data line 124, public electrode 126 and pixel electrode 127.Particularly, when color layer 118 formed zig-zag type, preferably, color layer 118 was because the zig-zag type consistent with the zig-zag type of data line 124.
Liquid crystal display device 100 according to the 4th embodiment can be designed to further comprise: in each pixel column, and the stabilized electrodes between the pixel subarea that pixel subarea that liquid crystal molecule twists along clockwise direction and liquid crystal molecule twist in the counterclockwise direction.Stabilized electrodes can guarantee border stable between the pixel subarea, thereby, the orientation of stabilizing liquid crystal molecule.Even display screen is pointed friction like this, finger-marks can not be retained on the display screen yet, have guaranteed that the displayed image sharpness is improved.
Though Japanese patent application No.2000-326814 (Japanese unexamined patent announcement No.2002-131781), belong to that the application's assignee submits to, and it is not open, it has illustrated the advantage that time the present invention emphasizes in the back, but this explanation and do not mean that the applicant admits that Japanese patent application No.2000-326814 is a prior art legal before the present invention.The related content of Shuo Ming Japanese patent application No.2000-326814 only is for better understanding purpose of the present invention below.
Japanese patent application No.2000-326814 has advised having respectively from the pixel electrode of the V-shape public electrode of the outward extending public auxiliary electrode in top of the pixel electrode of V-shape public electrode and V-shape and pixel auxiliary electrode and V-shape public auxiliary public.The end of public auxiliary electrode and pixel auxiliary electrode and pixel electrode and public electrode are overlapping.
Yet the public and pixel electrode of above-mentioned V-shape can not be applied on the liquid crystal display device 100 according to the 4th embodiment, because pixel electrode 127 and public electrode 126 are formed on same one deck of liquid crystal display device 100.In addition, for V-shape public electrode and pixel electrode are applied to the increase that also needs to prevent making step on the liquid crystal display device 100.
Therefore, comprise the stabilized electrodes that can guarantee to have a stable border between the pixel subarea in order to make liquid crystal display device 100, shown in Figure 59, the stabilized electrodes 140 that floats is formed under the revers turn part top of pixel electrode 127, and overlapping with it.Each unsteady stabilized electrodes 140 all is made of second metal level, thereby, can not be electrically connected with pixel electrode 127.Each unsteady stabilized electrodes 140 is all fully overlapping with pixel electrode 127, and extend on the border between the pixel subarea.
Similarly, the stabilized electrodes 141 that floats be formed in public electrode 126 revers turn part tops below, and overlapping with it.Each unsteady stabilized electrodes 141 all is made of the first metal layer.Each unsteady stabilized electrodes 141 is all fully overlapping with public electrode 126, and extend on the border between the pixel subarea.
Above-mentioned unsteady stabilized electrodes 140 and 141 has guaranteed the direction of the electric field points liquid crystal molecule distortion in each pixel subarea, and it has further guaranteed the stable subregion in pixel subarea.
Figure 60 shows and adopts unsteady stabilized electrodes 140 shown in Figure 59 and 141 liquid crystal display device 100.
Figure 61 is at independent the TFT district, the pixel region that there is shown liquid crystal display device 100 and contact porose area.TFT district, pixel region and sectional view A-A along the line, B-B and the C-C intercepting respectively in Figure 60 that contacts porose area.
Shown in Figure 61, liquid crystal display device 100 can be designed to include the pixel auxiliary electrode 135 under the first film 25a of second interlayer insulating film 25.Pixel auxiliary electrode 135 is made of second metal level, and integrally formed with the source electrode 130b of TFT130.
Figure 62 A is the planimetric map of the ITO layer that forms in the liquid crystal display device shown in Figure 60, and Figure 62 B is the planimetric map of each layer the ITO layer that forms in liquid crystal display device shown in Figure 60.Shown in Figure 62 A and 62B, pixel auxiliary electrode 135 is by constituting with the overlapping 135a of first of public electrode wire 126a and 126b and second portion 135b and the third part 135c that forms below pixel electrode 127, thereby defined the memory capacitance between the first and second part 135a and 135b and public electrode wire 126a and 126b.Third part 135c is a zig-zag type, interconnects with 135a of first and second portion 135b.The 135a of first, second portion 135b and third part 135c arrange with the I font.
Similar with first embodiment, pixel auxiliary electrode 135a in the liquid crystal display device 100 and 135b can be designed to have such sloping edge in each post, make by the definite frictional direction or the orientation direction of liquid crystal of rubbing, just can determine with the relation between the direction of an electric field that applies on pixel electrode 127 (and apply and the pixel auxiliary electrode 135 of pixel electrode 127 identical voltages to it) and the public public electrode 126 (and and apply and the public electrode wire 126a and the 126b of public electrode 126 identical voltages to it), guarantee that this liquid crystal aligning direction and this direction of an electric field are overlapping.If the liquid crystal aligning direction is whole in the viewing area of pixel electrode 127 and 126 encirclements of public public electrode along clockwise direction with certain acute angle rotation, and near the electrode the pixel subarea that liquid crystal molecule twists in a clockwise direction; Perhaps above-mentioned relation is determined, guarantees that liquid crystal aligning direction and direction of an electric field are overlapping; If the liquid crystal aligning direction is whole in the viewing area of pixel electrode 127 and 126 encirclements of public public electrode in the counterclockwise direction with certain acute angle rotation, and near the electrode the pixel subarea that liquid crystal molecule twists with counter clockwise direction.This structure stops structure 36 corresponding to the reverse rotation of having mentioned in the first embodiment.
With reference to figure 62A, the electrode that is connected with the top of the revers turn part of the pixel auxiliary electrode 135c that is made of second metal level also is made of second metal level, therefore, is not floating electrode.Kind electrode is called as stabilized electrodes 142.
Stabilized electrodes 142 has guaranteed that the electric field in each pixel subarea can stably point to the direction of liquid crystal molecule distortion, and then guarantees the stable subregion in pixel subarea.
In the liquid crystal display device shown in Figure 60, the pixel auxiliary electrode 135 that is made of second metal level can be designed to comprise stabilized electrodes 142, its top from the revers turn part of pixel auxiliary electrode 135, stretches out with the boundary between two pixel subareas of reverse rotation along liquid crystal molecule.Stabilized electrodes 142 is made of second metal level, guarantees that the liquid crystal molecule rotation in each pixel subarea is steady.
The public auxiliary electrode that is made of second metal level also can guarantee the steady rotation of liquid crystal molecule in each pixel subarea.
Liquid crystal display device 100 according to the 4th embodiment can be applied to that is to say on the liquid crystal display device shown in Figure 42 B, and this is that a kind of opening of active device substrate is at the liquid crystal display device that extends perpendicular to the direction of data line 124 bearing of trends.
For the liquid crystal display device shown in Figure 42 A, that is, it be a kind of opening of active device substrate be along and the liquid crystal display device that extends perpendicular to the identical direction of data line 124 bearing of trends, liquid crystal is vertical to be injected wherein; Yet for the liquid crystal display device shown in Figure 42 B, that is, the opening of its active device substrate of this liquid crystal display device extends along the direction perpendicular to data line 124 bearing of trends, thereby liquid crystal is that level is injected therebetween.Under latter event, data line 124 forms with linearity, has defined the gate line zig zag of grid.The 5th embodiment
Figure 63 A is the sectional view according to the plane switch mode active matrix liquid crystal display device 180 of fifth embodiment of the invention, and is corresponding with Figure 41, and the latter is the sectional view according to the 3rd embodiment liquid crystal display device 100.
In the 3rd embodiment liquid crystal display device 100, except public electrode 126, pixel electrode 127 also is formed on the second film 126b of second interlayer insulating film 125.
In the liquid crystal display device 180 of the 5th embodiment, pixel electrode 127 is to form on second metal film on first interlayer insulating film 123, is similar to the liquid crystal display device 80 according to two embodiments.Because pixel electrode 127 is made of second metal level, so the percentage of open area of the liquid crystal display device 180 of the 5th embodiment is less than the liquid crystal display device 10 of first embodiment.Therefore, owing to pixel electrode 127 constitutes by being different from the aspect that forms public electrode 126, so the not short circuit each other of pixel electrode 127 and public electrode 126 guarantees that yield rate is improved.
In addition, it also may form memory capacitance between the pixel electrode 127 that is made of second metal level and public electrode wire 126a that is made of the first metal layer and 126b.Guaranteed that so the total memory capacitance of liquid crystal layer 113 and the stability of displayed image are strengthened.
As previously shown, public electrode 126 can comprise stabilized electrodes, its top, stretch out with the border between the pixel subarea of distortion counterclockwise along pixel subarea that liquid crystal molecule twists in a clockwise direction and liquid crystal molecule from the revers turn part of public electrode 126, in this case, stabilized electrodes can be made of the ITO layer that constitutes public electrode 126.Similarly, pixel electrode 127 can comprise stabilized electrodes, its top, stretch out with the border between the pixel subarea of distortion counterclockwise along pixel subarea that liquid crystal molecule twists in a clockwise direction and liquid crystal molecule from the revers turn part of pixel electrode 127, in this case, stabilized electrodes can be made of the ITO layer that constitutes pixel electrode 127.These stabilized electrodes have been guaranteed in pixel subarea boundary liquid crystal molecule stability of rotation.The 6th embodiment
Figure 63 B is the sectional view according to the plane switch mode active matrix liquid crystal display device 185 of sixth embodiment of the invention, and is corresponding with Figure 41, and the latter is the sectional view according to the 3rd embodiment liquid crystal display device 100.
In the 3rd embodiment liquid crystal display device 100, the first film 125a that constitutes second interlayer insulating film 125 with the second film 125b is formed on the whole pixel region.On the contrary, the second film 125b can be only with the overlapping public electrode 126 of data line 124 under form.
In pixel display area, public electrode 126 is to be made of the first metal layer that constitutes grid, and is in the zone except the zone of being made of public electrode 126 transparent metal, overlapping with data line 124.
According to the 6th embodiment, need whereby, can not prevent the increase stray capacitance between public electrode 126 and data line 124 exceeding the formation second film 125b on the required bigger zone.
Because public electrode 126 is on first metal film on first interlayer insulating film 123, constitute on the zone the zone of the public electrode 126 that constitutes except the transparent metal film that forms on by the second film 125b, so the percentage of open area of the liquid crystal display device 185 of the 6th embodiment is less than the liquid crystal display device 100 of the 4th embodiment.Yet, owing to public electrode 126 constitutes by being different from the aspect that forms pixel electrode 127, so the not short circuit each other of public electrode 126 and pixel electrode 127 guarantees that yield rate is improved.
The stabilized electrodes that forms between the pixel subarea with distortion counterclockwise in pixel subarea that liquid crystal molecule twists in a clockwise direction and liquid crystal molecule can be designed to stretch out from the top of the revers turn part of pixel electrode 127 and public electrode 126, with the 5th embodiment similarly because pixel electrode 127 is formed on the aspect different with the aspect of public electrode 126.
Plane switch mode active matrix liquid crystal display device 185 according to the 6th embodiment can increase percentage of open area, is similar to the liquid crystal display device 10 according to first embodiment.The 7th embodiment
According to the liquid crystal display device of the 7th embodiment have with first to the 6th embodiment in the identical structure of liquid crystal display device arbitrarily, except the liquid crystal display device according to the 7th embodiment is designed to not comprise the color layer that forms as a counter substrate part.What therefore, the plane switch mode active matrix liquid crystal display device that provides of the 7th embodiment showed is soot-and-whitewash.
The liquid crystal display device that comprises the 7th embodiment of said structure has higher light utilization rate, guarantees the low-power consumption under the high brightness.The 8th embodiment
In above-mentioned first to the 7th embodiment, the color layer of formation and black basalis constitute the part as counter substrate.In the plane switch mode active matrix liquid crystal display device of the 8th embodiment, color layer, black basalis or color layer and black basalis do not form as the part of counter substrate, just form as the part of active device substrate.
By forming color layer, black basalis or color layer and black basalis a part as the active device substrate, the accuracy of location between the part that might increase these layers and in the active device substrate, form (for example data line), the width that has guaranteed black basalis and other layers like this can reduce, and percentage of open area is further enhanced.
At first, second, in the 4th or the 5th embodiment, as color layer and/or black basalis that the part of active device substrate forms, the organic membrane that can be configured second interlayer insulating film covers.Organic membrane can prevent the color layer that in the active device substrate, forms and/or the impurity in the black basalis by elution in liquid crystal layer, thereby, guarantee that stability is strengthened.
At first, second, in the 4th or the 5th embodiment, when second interlayer insulating film be by first film that inoranic membrane constitutes constitute and when constituting second film by organic membrane, color layer and/or black basalis can be clipped between first and second films.Organic membrane can prevent the color layer that in the active device substrate, forms and/or the impurity in the black basalis by elution in liquid crystal layer, and prevent that further the active device substrate is subjected to the electric charge in the color layer and/or the influence of ion motion, thereby, guarantee that reliability is improved.
Figure 64 and 65 shows the plane switch mode active matrix liquid crystal display device according to the 8th embodiment, it is corresponding to the liquid crystal display device 100 according to the 4th embodiment shown in Figure 40 and 41, the second interlayer insulating film 125 first film 125a that is made of inoranic membrane and be made of the second film 125b that organic membrane constitutes wherein, color layer 118 and black basalis 117 are clipped between the first film 125a and the second film 125b.Figure 64 is the planimetric map according to the liquid crystal display device of the 8th embodiment, and Figure 65 is the sectional view of Figure 64 XXXXXXV-XXXXXXV along the line.The 9th embodiment
According to the liquid crystal display device 10 of first embodiment, according to the liquid crystal display device 80 of second embodiment, according to the liquid crystal display device 85 of the 3rd embodiment, according to the liquid crystal display device 100 of the 4th embodiment, according to the liquid crystal display device 180 of the 5th embodiment, according to the liquid crystal display device 185 of the 6th embodiment, according to the liquid crystal display device of the 7th embodiment, all can be applied on the electron device according to the liquid crystal display device of the 8th embodiment.The following describes the part example.
Figure 66 is the block scheme of the portable communications device 250 that one of adopted in the liquid crystal display device 10,80,85,100,180 and 185.In portable communications device 250, liquid crystal display device 10,80,85,100,180 and 185 and according to the liquid crystal display device of the 7th embodiment or all be used as the part of the liquid crystal board of introducing later 265 according to the liquid crystal display device of the 8th embodiment.
Portable communications device 250 by the display unit 268 that comprises liquid crystal board 265, backlight emission device 266 and image signal processor 267, control constitute the controller 269 of the parts operation of portable communication terminal 250, program and the various memory of data 271 that storage is carried out by controller 269, the communication unit 272 that carries out data communication, the entering apparatus 273 that constitutes by keyboard or pointer and constitute portable communication terminal 250 and provide the power supply 274 etc. of electric power to form to above-mentioned.
Comprise that the liquid crystal board 265 according to the liquid crystal display device of above-mentioned embodiment can improve the percentage of open area of display unit 268, and the brightness that further improves display unit 268.
The liquid crystal board 265 that comprises liquid crystal display device 10,80,85,100,180 or 185 can be applied on portable personal computer, notebook personal computer or desktop PC's the display.
Figure 67 is the block scheme of cell phone 275, has wherein used a kind of of liquid crystal display device 10,80,85,100,180 or 185.
Program that cell phone 275 is made of each parts operation of cell phone 275 display unit 276 that comprises liquid crystal board 265, backlight emission device 266 and image signal processor 267, control controller 277, storage carried out by controller 277 and various memory of data 278, wireless signal receptacle 279, wireless signal transmitter 281, the entering apparatus 282 that constitutes by keyboard or pointer and constitute mobile phone 275 and provide the power supply 283 etc. of electric power to form to above-mentioned.
Comprise that the liquid crystal board 265 according to the liquid crystal display device of one of above-mentioned embodiment can improve the percentage of open area of display unit 276, and the brightness that further improves display unit 276.
In above-mentioned first to the 9th embodiment, characteristic of the present invention mainly has been described, no longer describe in detail for part well-known to those having ordinary skill in the art.Yet, should also be noted that the latter needn't explain for a person skilled in the art in detail just to be easy to understand.
Introduce the advantage that obtains by the present invention who introduces previously below.
According to the invention described above, can realize following purpose of the present invention:
(a) provide the plane switch mode liquid crystal display device, it can prevent the generation of vertical crosstalk, and can not reduce percentage of open area;
(b) impedance of the public electrode in the minimizing plane switch mode LCD, wherein data line is covered by the public electrode that transparent material constitutes;
(c) reduce light tight film, for example black basalis, it can be used on the conventional plane switch mode liquid crystal display device, is used to prevent do not appear at display screen because electric field is revealed the vertical crosstalk that causes when the display screen displayed image;
(d) provide the liquid crystal display device of plane switch mode, its transparency electrode can be used low-cost production;
(e) provide the liquid crystal display device of plane switch mode, its data line is almost completely covered by public electrode, can not be increased in the stray capacitance that forms between data line and the public electrode;
(f) in the liquid crystal display device of plane switch mode, reliable transparent material is provided, be used for the shadow data line.
In addition, the present invention can solve the other problems relevant with above-mentioned matters.
Can find by the experimental result that the inventor has carried out, for example, compare, can increase by 30 to 40% percentage of open area according to the liquid crystal display device of the plane switch mode of first embodiment of mentioning later with the conventional liquid crystal display device shown in Fig. 1.
Claims (75)
1. plane switch mode active matrix liquid crystal display device comprises:
(a) first substrate;
(b) be positioned at second substrate of this first substrate opposite;
(c) be clipped in liquid crystal layer between described first and second substrates.
Wherein said first substrate comprises:
(a1) thin film transistor (TFT) of band grid, drain electrode and source electrode;
(a2) pixel electrode is associated with the pixel that will drive respectively;
(a3) apply the public electrode of reference voltage to it;
(a4) data line;
(a5) sweep trace; And
(a6) public electrode wire;
Described grid is electrically connected with described sweep trace, and described drain electrode is electrically connected with described data line, and described source electrode is electrically connected with described pixel electrode, and described public electrode is electrically connected with described public electrode wire;
Liquid crystal molecule axle in described liquid crystal layer is by parallel substantially with the plane of described first substrate and be applied to electric field between described pixel electrode and the described public electrode, be parallel on the plane of described first substrate and rotating, so that displayed image;
It is characterized in that:
Described public electrode is made of transparent material, forms on the aspect that is positioned at than the nearer described liquid crystal layer of described data line;
Except that described data line bit near the zone the described sweep trace, described common electrode layer fully and data line overlapping, between them, accompany insulation course;
Described plane switch mode active matrix liquid crystal display device has further comprised at described public electrode fully and the light non-transmittable layers in the data line overlapping areas;
Described light non-transmittable layers is forming on second substrate or on described first substrate, makes described light non-transmittable layers be positioned at than the more close described liquid crystal layer of described data line, and in the face of described data line;
Described light non-transmittable layers is made of black basalis or multi layer colour layer;
The width of described black basalis or described multi layer colour layer less than with the width of the overlapping described public electrode of data line.
2. plane switch mode active matrix liquid crystal display device as claimed in claim 1, wherein said public electrode is electrically connected with described public electrode wire by the contact hole in each pixel.
3. plane switch mode active matrix liquid crystal display device comprises:
(a) first substrate;
(b) be positioned at second substrate of this first substrate opposite;
(c) be clipped in liquid crystal layer between described first and second substrates.
Wherein said first substrate comprises:
(a1) thin film transistor (TFT) of band grid, drain electrode and source electrode;
(a2) pixel electrode is associated with the pixel that will drive respectively;
(a3) apply the public electrode of reference voltage to it;
(a4) data line;
(a5) sweep trace; And
(a6) public electrode wire;
Described grid is electrically connected with described sweep trace, and described drain electrode is electrically connected with described data line, and described source electrode is electrically connected with described pixel electrode, and described public electrode is electrically connected with described public electrode wire;
Described pixel electrode is in a zigzag, and almost spaced apart equally spacedly each other;
Described public electrode is in a zigzag, and almost spaced apart equally spacedly each other;
Two-way electric field is almost parallel with described first substrate, and is applied on described pixel electrode and the described public electrode;
Described plane switch mode active matrix liquid crystal display device comprises: apply first sub-pixel area with first direction electric field, liquid crystal molecule axle in the wherein said liquid crystal layer is being parallel to upper edge, plane first sense of rotation rotation of described first substrate surface, apply second sub-pixel area with second direction electric field, liquid crystal molecule axle in the wherein said liquid crystal layer is in being parallel to the described first substrate surface plane, along second sense of rotation rotation that is different from described first sense of rotation;
It is characterized in that:
Described public electrode is made of transparent material, forms on the aspect that is positioned at than the more close described liquid crystal layer of described data line;
Except that described data line bit near the zone the described sweep trace, described public electrode fully and data line overlapping, between them, accompany insulation course;
Described plane switch mode active matrix liquid crystal display device has further comprised at described public electrode fully and the light non-transmittable layers in the data line overlapping areas;
Described light non-transmittable layers is forming on second substrate or on described first substrate, makes described light non-transmittable layers be positioned at than the more close described liquid crystal layer of described data line, and in the face of described data line;
Described light non-transmittable layers is made of black basalis or multi layer colour layer;
The width of described black basalis or described multi layer colour layer less than with the width of the overlapping described public electrode of data line;
Described data line is to extend along described pixel electrode in a zigzag.
4. plane switch mode active matrix liquid crystal display device comprises:
(a) first substrate;
(b) be positioned at second substrate of this first substrate opposite;
(c) be clipped in liquid crystal layer between described first and second substrates.
Wherein said first substrate comprises:
(a1) thin film transistor (TFT) of band grid, drain electrode and source electrode;
(a2) pixel electrode is associated with the pixel that will drive respectively;
(a3) apply the public electrode of reference voltage to it;
(a4) data line;
(a5) sweep trace; And
(a6) public electrode wire;
Described grid is electrically connected with described sweep trace, and described drain electrode is electrically connected with described data line, and described source electrode is electrically connected with described pixel electrode, and described public electrode is electrically connected with described public electrode wire;
Described pixel electrode is in a zigzag, and almost spaced apart equally spacedly each other;
Described public electrode is in a zigzag, and almost spaced apart equally spacedly each other;
Two-way electric field is almost parallel with described first substrate, and is applied on described pixel electrode and the described public electrode;
Described plane switch mode active matrix liquid crystal display device comprises: apply first sub-pixel area with first direction electric field, the liquid crystal molecule axle in the wherein said liquid crystal layer is being parallel to upper edge, plane first sense of rotation rotation of described first substrate surface; Apply second sub-pixel area with second direction electric field, the liquid crystal molecule axle in the wherein said liquid crystal layer is in being parallel to the described first substrate surface plane, along second sense of rotation rotation that is different from described first sense of rotation;
It is characterized in that:
The opening of described first substrate extends along the direction perpendicular to described data line bearing of trend;
Described public electrode is made of transparent material, forms on the aspect that is positioned at than the more close described liquid crystal layer of described data line;
Except that described data line bit near the zone the described sweep trace, described public electrode fully and data line overlapping, between them, accompany insulation course;
Described public electrode is electrically connected with described public electrode wire by the contact hole in each pixel;
Described plane switch mode active matrix liquid crystal display device has further comprised at described public electrode fully and the light non-transmittable layers in the data line overlapping areas;
Described light non-transmittable layers is forming on second substrate or on described first substrate, makes described light non-transmittable layers be positioned at than the more close described liquid crystal layer of described data line, and in the face of described data line;
Described light non-transmittable layers is made of black basalis or multi layer colour layer;
The width of described black basalis or described multi layer colour layer less than with the width of the overlapping described public electrode of data line;
Described data line linear extension;
The gate line that constitutes described grid is to extend in a zigzag.
5. plane switch mode active matrix liquid crystal display device comprises:
(a) first substrate;
(b) be positioned at second substrate of this first substrate opposite;
(c) be clipped in liquid crystal layer between described first and second substrates.
Wherein said first substrate comprises:
(a1) thin film transistor (TFT) of band grid, drain electrode and source electrode;
(a2) pixel electrode is associated with the pixel that will drive respectively;
(a3) apply the public electrode of reference voltage to it;
(a4) data line;
(a5) sweep trace; And
(a6) public electrode wire;
Described grid is electrically connected with described sweep trace, and described drain electrode is electrically connected with described data line, and described source electrode is electrically connected with described pixel electrode, and described public electrode is electrically connected with described public electrode wire;
Described pixel electrode is in a zigzag, and almost spaced apart equally spacedly each other;
Described public electrode is in a zigzag, and almost spaced apart equally spacedly each other;
Two-way electric field is almost parallel with described first substrate, and is applied on described pixel electrode and the described public electrode;
Described plane switch mode active matrix liquid crystal display device comprises: apply first sub-pixel area with first direction electric field, the liquid crystal molecule axle in the wherein said liquid crystal layer is being parallel to upper edge, plane first sense of rotation rotation of described first substrate surface; Apply second sub-pixel area with second direction electric field, the liquid crystal molecule axle in the wherein said liquid crystal layer is in being parallel to the described first substrate surface plane, along second sense of rotation rotation that is different from described first sense of rotation;
It is characterized in that:
The isolation floating electrode that the aspect that is formed by described drain electrode or described grid forms, overlapping with described public electrode or described pixel electrode on the sweep of described zigzag public electrode or pixel electrode, accompany dielectric film betwixt;
At least one of described public electrode and pixel electrode have from the sweep of described zigzag public electrode and pixel electrode, on the direction of described sweep projection, along the outstanding projection of the periphery of described first and second sub-pixel area.
6. plane switch mode active matrix liquid crystal display device as claimed in claim 3 is characterized by described public electrode and is electrically connected with described public electrode wire by the contact hole in each pixel.
7. as claim 3 or 6 described plane switch mode active matrix liquid crystal display devices, it is characterized by described data line, described public electrode and described pixel electrode and in each pixel, first order buckling occurs.
8. as claim 3 or 6 described plane switch mode active matrix liquid crystal display devices, it is characterized by described data line, described public electrode and described pixel electrode and in each pixel, occur more than or equal to 3 odd number inferior crooked.
9. as claim 3 or 6 described plane switch mode active matrix liquid crystal display devices, it is crooked with the N value in each pixel to it is characterized by described data line, described public electrode and described pixel electrode, and described N value defines according to equation (A):
30[μm]≤L/(N+1)[μm]≤40[μm]?????(A)
Wherein L represents the length of opening.
10. as any one the described plane switch mode active matrix liquid crystal display device in the claim 1 to 6, the described black basalis that it is characterized by in the face of described data line forms with linearity.
11. as claim 3 or 6 described plane switch mode active matrix liquid crystal display devices, the described black basalis that it is characterized by in the face of described data line forms with zigzag.
12. plane switch mode active matrix liquid crystal display device as claimed in claim 11, the described black basalis that it is characterized by in the face of described data line is bent to consistent with described data line.
13. as claim 3 or 6 described plane switch mode active matrix liquid crystal display devices, it is characterized by along in the face of described black basalis one end of described data line and between an end of the described data line relative with described black basalis one end substrate distance, along perpendicular to the section of described data line bearing of trend more than or equal to 4 μ m.
14. as claim 3 or 6 described plane switch mode active matrix liquid crystal display devices, it is characterized by when checking from above, described black basalis forms on described second substrate, and in the face of anywhere overlapping more than or equal to 4 μ m of the described black basalis of described data line and described data line.
15. as any one the described plane switch mode active matrix liquid crystal display device in the claim 1 to 6, one that it is characterized by in described first and second substrates further is made of the color layer that forms with linearity.
16., it is characterized by described first and second substrates and further constitute by being the color layer that forms in a zigzag as claim 3 or 6 described plane switch mode active matrix liquid crystal display devices.
17. plane switch mode active matrix liquid crystal display device as claimed in claim 16 is characterized by the crooked consistent of described color layer and described data line.
18. as any one described plane switch mode active matrix liquid crystal display device in the claim 1 to 6, further comprise, reverse rotation in sub-pixel area stops structure, wherein all liquid crystal molecules all with the equidirectional rotation, have prevented that liquid crystal molecule and described same side from rotating in the opposite direction;
Described reverse rotation stops structure to comprise auxiliary electrode, apply the voltage that equals the voltage that applies at least one at described pixel electrode and described public electrode to it, if make described initial orientation direction rotate with acute angle, in all subareas in described sub-pixel area, the direction of an electric field that produces in the initial orientation direction of liquid crystal molecule and the described sub-pixel area is overlapping.
19. as claim 3 or 6 described plane switch mode active matrix liquid crystal display devices, further comprise the floating electrode of isolation, it is made of the layer that described grid and described drain electrode constitute.
Described isolation floating electrode is overlapping with described public electrode or pixel electrode on described zigzag public electrode that wherein accompanies described insulation course or pixel electrode sweep, and at the extension that extends on the direction of described sweep projection, along the border between described first and second sub-pixel area.
20. as one of any described plane switch mode active matrix liquid crystal display device in the claim 1 to 6, further comprise interlayer insulating film, it is in formation below the overlapping described public electrode of described data line, described interlayer insulating film is made of the upper and lower, and described upper strata is only in formation below the overlapping described public electrode part of described data line.
21. as claim 3 or 6 described plane switch mode active matrix liquid crystal display devices, it is characterized by described zigzag data line and comprise linear segment, it tilts along the direction that described data line extends.
22. plane switch mode active matrix liquid crystal display device as claimed in claim 21, it is characterized by described black basalis and on described second substrate, form, and in the face of described data line and linear its width of described black basalis that constitutes greater than by definite minimum Dmin width that establishes an equation down:
Dmin＝D+LS×tanθ-(D-8)×2[μm]
Wherein D represents the width of described data line, the length that LS obtains when being illustrated in described linear segment towards direction projection that described data line extends, and θ represents the angle that forms between described data line bearing of trend and the described linear segment.
23. as claim 3 or 6 described plane switch mode active matrix liquid crystal display devices, it is characterized by described zigzag data line and comprise first linear segment that extends in parallel with described data line bearing of trend, and second linear segment that tilts along described data line bearing of trend.
24. plane switch mode active matrix liquid crystal display device as claimed in claim 23, it is characterized by described black basalis and on described second substrate, form, and its width of described black basalis that forms in the face of described data line with linearity is anywhere all greater than by definite minimum Dmin width that establishes an equation down:
Dmin＝D+LS×tanθ-(D-8)×2[μm]
Wherein D represents the width of described data line, the length that LS obtains when being illustrated in described second linear segment towards direction projection that described data line extends, and θ represents the angle that forms between described data line bearing of trend and described second linear segment.
25. plane switch mode active matrix liquid crystal display device as claimed in claim 21 further comprises the coating of the recess coupling that is adapted at forming on the described zigzag data line sweep.
26. plane switch mode active matrix liquid crystal display device as claimed in claim 21 further comprises the unsteady light tight film that is formed by light tight metal, the described light tight film that floats is overlapping at the recess place and the described data line of described data line sweep.
27. as claim 3 or 6 described plane switch mode active matrix liquid crystal display devices, further comprise from the outstanding jut of the sweep of overlapping flexuose each the described zigzag public electrode of described zigzag data line.
28. as any one described plane switch mode active matrix liquid crystal display device in the claim 1 to 6, it is characterized by described public electrode in the width broad ways at described opposite end place than described data live width 1.5 μ m or bigger.
29. it is, it is characterized by the width of the width of described black basalis, and overlapping with described data line on whole length less than described data line as any one described plane switch mode active matrix liquid crystal display device in the claim 1 to 6.
30. as any one described plane switch mode active matrix liquid crystal display device in the claim 1 to 6, it is characterized by described black basalis and on second substrate, form, and in the face of the width of the described black basalis of described data line more than or equal to 6 μ m.
31. as any one described plane switch mode active matrix liquid crystal display device in the claim 1 to 6, it is characterized by the region overlapping around described black basalis and described sweep trace and its, and and the zone and the peripheral region thereof that are clipped between described sweep trace and the described pixel electrode overlapping.
32., it is characterized by described pixel electrode and make by transparent material as any one described plane switch mode active matrix liquid crystal display device in the claim 1 to 6.
33., it is characterized by described public electrode and described pixel electrode all is formed on on one deck as any one described plane switch mode active matrix liquid crystal display device in the claim 1 to 6.
34. as any one described plane switch mode active matrix liquid crystal display device in the claim 1 to 6 further comprise directly as described in the interlayer insulative layer that forms in the layer below the public electrode, and by the pixel auxiliary electrode that single or multiple lift constitutes be formed on described interlayer insulative layer below;
Described pixel auxiliary electrode is electrically connected with described source electrode, and remains on the voltage that equals described pixel electrode voltage;
Described pixel auxiliary electrode is made up of opaque metal.
35. plane switch mode active matrix liquid crystal display device as claimed in claim 34, it is characterized by described pixel auxiliary electrode to small part be formed on the described pixel electrode that forms in the described public electrode cambium layer below, and have a plurality of broach.
36. as any one described plane switch mode active matrix liquid crystal display device in the claim 1 to 6, further be included in the interlayer insulative layer that forms in the aspect of direct described public electrode below, and the pixel auxiliary electrode that constitutes by single or multiple lift that under described interlayer insulative layer, forms;
Described pixel auxiliary electrode is electrically connected with described public electrode wire, and remains on the voltage that equals described public electrode voltages;
Described pixel auxiliary electrode is made up of opaque metal.
37. plane switch mode active matrix liquid crystal display device as claimed in claim 36, it is characterized by described pixel auxiliary electrode be formed on described public electrode below, and have a plurality of broach.
38., it is characterized by sweep trace end, data line end and public electrode thread end and covered by material identical materials by the described public electrode that constitutes with transparent material as any one described plane switch mode active matrix liquid crystal display device in the claim 1 to 6.
39. as any one described plane switch mode active matrix liquid crystal display device in the claim 1 to 6, further be included in and make all liquid crystal molecules stop structure in the sub-pixel area according to the reverse rotation of equidirectional rotation, can prevent liquid crystal molecule according to the opposite spin of described equidirectional;
The part edge of described at least pixel auxiliary electrode and described public electrode wire is formed slopely, if make described initial orientation direction rotate with acute angle, the initial orientation direction of its liquid crystal molecule is overlapping with the direction of an electric field that produces in the described sub-pixel area in all subareas in described sub-pixel area.
40., it is characterized by zigzag public electrode and pixel electrode and defined the sub-pixel area that liquid crystal molecule rotates along both direction in pixel as claim 3 or 6 described plane switch mode active matrix liquid crystal display devices;
The described pixel auxiliary electrode of some of them have from each in a zigzag pixel electrode sweep, on the outstanding direction of described sweep, along liquid crystal molecule with the outstanding jut in border between two sub-pixel area of different directions rotation.
41., it is characterized by zigzag public electrode and pixel electrode and defined the sub-pixel area that liquid crystal molecule rotates along both direction in pixel as claim 3 or 6 described plane switch mode active matrix liquid crystal display devices;
The described pixel auxiliary electrode of some of them have from each in a zigzag public electrode sweep, on the outstanding direction of described sweep, along liquid crystal molecule with the outstanding jut in border between two sub-pixel area of different directions rotation; Be used to stablize the rotation of described liquid crystal molecule between described two sub-pixel area.
42., further comprise the passivating film that covers described public electrode as any one described plane switch mode active matrix liquid crystal display device in the claim 1 to 6.
43. plane switch mode active matrix liquid crystal display device as claimed in claim 42 further comprises the passivating film that covers described pixel electrode.
44., it is characterized by described first substrate that forms one of second contact hole have first contact hole that described pixel electrode is electrically connected with described source electrode and described public electrode is electrically connected with public electrode wire as any one described plane switch mode active matrix liquid crystal display device in the claim 1 to 6;
Described first and second contact holes are square or rectangle, and have the length of side more than or equal to 6 μ m.
45., it is characterized by described first substrate that forms one of second contact hole have first contact hole that described pixel electrode is electrically connected with described source electrode and described public electrode is electrically connected with public electrode wire as any one described plane switch mode active matrix liquid crystal display device in the claim 1 to 6;
Described first and second contact holes use metal film to cover on its surface.
46., it is characterized by described pixel electrode and constitute by second metal level that forms described data line as any one described plane switch mode active matrix liquid crystal display device in the claim 1 to 6.
47. as any one described plane switch mode active matrix liquid crystal display device in the claim 1 to 6, it is characterized by in the zone that image shows, described pixel electrode is to be made of second metal level that forms described drain electrode, and except constitute by transparent metal and with described public electrode the overlapping part of described data line be to constitute by the first metal layer that forms grid.
48. plane switch mode active matrix liquid crystal display device as claimed in claim 47, further comprise be clipped between described data line and the public electrode, with described data line overlapping and interlayer insulating film that constitute by transparent metal, this interlayer insulating film is formation below described public electrode only.
49. as any one described plane switch mode active matrix liquid crystal display device in the claim 1 to 6, further comprise be clipped between described data line and the public electrode, with described data line overlapping and interlayer insulating film that constitute by transparent metal, this interlayer insulating film is made of inoranic membrane.
50. as any one described plane switch mode active matrix liquid crystal display device in the claim 1 to 6, further comprise be clipped between described data line and the public electrode, with described data line overlapping and interlayer insulating film that constitute by transparent metal, this interlayer insulating film is made of organic membrane.
51. as any one described plane switch mode active matrix liquid crystal display device in the claim 1 to 6, further comprise be clipped between described data line and the public electrode, with described data line overlapping and interlayer insulating film that constitute by transparent metal, what first film that described interlayer insulating film is made by inoranic membrane was that made and made by organic membrane and second film that cover described first film constitutes.
52., it is characterized by described inoranic membrane and be selected from silicon nitride film, inorganic polysilazanes film, silicon oxide film and comprise in the sandwich construction of above-mentioned two or more films one as any one described plane switch mode active matrix liquid crystal display device in the claim 1 to 6.
53., it is characterized by described organic membrane by a kind of the making among photosensitive acrylic resin film, light-sensitive polyimide film, benzocyclobutene (BCB) film, organic polysilazanes film and the silicone film as any one described plane switch mode active matrix liquid crystal display device in the claim 1 to 6.
54. as any one described plane switch mode active matrix liquid crystal display device in the claim 1 to 6, it is characterized by described first film and make, and described second film is by a kind of the making in photosensitive acrylic resin film and the light-sensitive polyimide film by silicon nitride film.
55. as any one described plane switch mode active matrix liquid crystal display device in the claim 1 to 6, it is characterized by by transparent metal make and and the overlapping described public electrode of described data line further and the region overlapping between described sweep trace and the described public electrode.
56., it is characterized by by transparent metal and make and further overlapping with the channel region of described thin film transistor (TFT) with the overlapping described public electrode of described data line as any one described plane switch mode active matrix liquid crystal display device in the claim 1 to 6.
57., it is characterized by between described public electrode wire that constitutes by the first metal layer that forms described grid and the pixel auxiliary electrode that constitutes by second metal level that forms described drain electrode and form memory capacitance as any one described plane switch mode active matrix liquid crystal display device in the claim 1 to 6.
58. plane switch mode active matrix liquid crystal display device as claimed in claim 1 is characterized by described public electrode wire and is and forms in the planimetric map of each pixel, on the opposed edge or another side of described sweep trace, along described sweep trace.
59. as any one described plane switch mode active matrix liquid crystal display device in the claim 1 to 6, it is characterized by and further comprise light non-transmittable layers, it is electrically connected with described public electrode, and be formed on not by under the described data line in the zone of described black basalis and the covering of described multi layer colour layer, and the not described data line of described public electrode is overlapping.
60. as any one described plane switch mode active matrix liquid crystal display device in the claim 1 to 6, it is characterized by described grid is made up of the first metal layer, described drain electrode is made up of second metal level, and first and second metal levels are by chromium layer, aluminium lamination, titanium layer, molybdenum layer, tungsten layer and comprise that a kind of among above-mentioned one or more the multilayer film constitutes.
61. as any one described plane switch mode active matrix liquid crystal display device in the claim 1 to 6, it is characterized by when watching from above, described pixel electrode and described source electrode or the described pixel auxiliary electrode that forms by second metal level, on any one side up and down, be electrically connected to each other by first contact hole in each pixel, and when watching, described public electrode and the described public electrode wire that forms by the first metal layer, be electrically connected to each other by second contact hole in each pixel on any one side up and down from above.
62., it is characterized by described transparency electrode and form by indium zinc oxide (ITO) as any one described plane switch mode active matrix liquid crystal display device in the claim 1 to 6.
63., it is characterized by between described public electrode wire that constitutes by the first metal layer that forms described grid and the pixel auxiliary electrode that constitutes by second metal level that forms described drain electrode and form memory capacitance as any one described plane switch mode active matrix liquid crystal display device in the claim 1 to 6.
64. as any one described plane switch mode active matrix liquid crystal display device in the claim 1 to 6, it is characterized by described zigzag and pixel electrode and defined the sub-pixel area that liquid crystal molecule rotates along both direction in pixel, and
Wherein at least some described public electrodes and pixel electrode have sweep, the outstanding jut in border between two sub-pixel area of rotating with different directions on the direction that described sweep is given prominence to, along liquid crystal molecule from each zigzag public electrode, are used to be stabilized in the rotation of the liquid crystal molecule between described two sub-pixel area.
65. as any one described plane switch mode active matrix liquid crystal display device in the claim 1 to 6, further be included in the interlayer insulating film that forms between described data line and the described public electrode, described interlayer insulating film is made of first film that inoranic membrane constitutes, and second film has covered described first film and has been made of organic membrane, and the thickness of described first film is more than or equal to 0.25 μ m.
66., further be included in the color layer that forms on described first substrate as any one described plane switch mode active matrix liquid crystal display device in the claim 1 to 6.
67., further be included in the black basalis that forms on described first substrate as any one described plane switch mode active matrix liquid crystal display device in the claim 1 to 6.
68. as the described plane switch mode active matrix liquid crystal display device of claim 67, further be included in the interlayer insulating film that forms between described data line and the described public electrode, described interlayer insulating film is by having comprised organic membrane, described black basalis or the color layer that is covered by described organic membrane at least.
69. as the described plane switch mode active matrix liquid crystal display device of claim 67, further be included in the interlayer insulating film that forms between described data line and the described public electrode, described interlayer insulating film is made of first film that inoranic membrane constitutes, and second film has covered described first film and has been made of organic membrane, and described color layer or black basalis are clipped between described first and second films.
70. one kind has comprised the electron device as the plane switch mode active matrix liquid crystal display device of any one definition in the claim 1 to 69.
71. a method of making plane switch mode active matrix liquid crystal display device comprises:
(a) first substrate;
(b) be positioned at second substrate of this first substrate opposite;
(c) be clipped in liquid crystal layer between described first and second substrates.
Wherein said first substrate comprises:
(a1) thin film transistor (TFT) of band grid, drain electrode and source electrode;
(a2) pixel electrode is associated with the pixel that will drive respectively;
(a3) apply the public electrode of reference voltage to it;
(a4) data line;
(a5) sweep trace;
(a6) public electrode wire;
(a7) data line end;
(a8) sweep trace end; And
(a9) public electrode thread end;
Described grid is electrically connected with described sweep trace, and described drain electrode is electrically connected with described data line, and described source electrode is electrically connected with described pixel electrode, and described public electrode is electrically connected with described public electrode wire; And the liquid crystal molecule axle in the described liquid crystal layer in being parallel to described first base plan, by be parallel to the plane of described first substrate on substantially and be applied to described pixel electrode and described public electrode between electric field be rotated so that displayed image.
Described method comprises the steps:
(a) form described thin film transistor (TFT), described data line, described sweep trace and described public electrode wire, form interlayer insulating film then;
(b) the described interlayer insulating film of etching reaches the contact hole of described data line, described sweep trace and described public electrode wire with formation;
(c) deposit transparent metal on the entire product that is obtained by step (b) so that cover the inside surface of described contact hole with transparent metal, thereby forms described data line end, described sweep trace end and described public electrode thread end;
(d) the described transparent metal of etching to form described public electrode, makes that described public electrode and described data line are overlapping.
72. the method for making of plane switch mode active matrix liquid crystal display device comprises:
(a) first substrate;
(b) be positioned at second substrate of this first substrate opposite;
(c) be clipped in liquid crystal layer between described first and second substrates.
Wherein said first substrate comprises:
(a1) thin film transistor (TFT) of band grid, drain electrode and source electrode;
(a2) pixel electrode is associated with the pixel that will drive respectively;
(a3) apply the public electrode of reference voltage to it;
(a4) data line;
(a5) sweep trace; And
(a6) public electrode wire;
Described grid is electrically connected with described sweep trace, and described drain electrode is electrically connected with described data line, and described source electrode is electrically connected with described pixel electrode, and described public electrode is electrically connected with described public electrode wire;
Described pixel electrode is in a zigzag, and almost spaced apart equally spacedly each other;
Described public electrode is in a zigzag, and almost spaced apart equally spacedly each other;
Two-way electric field is almost parallel with described first substrate, and is applied on described pixel electrode and the described public electrode;
Described plane switch mode active matrix liquid crystal display device comprises: apply first sub-pixel area with first direction electric field, the liquid crystal molecule axle in the wherein said liquid crystal layer is being parallel to upper edge, plane first sense of rotation rotation of described first substrate surface; Apply second sub-pixel area with second direction electric field, the liquid crystal molecule axle in the wherein said liquid crystal layer is in being parallel to the described first substrate surface plane, along second sense of rotation rotation that is different from described first sense of rotation; Described method comprises the steps:
(a) form described thin film transistor (TFT), described data line, described sweep trace and described public electrode wire, form interlayer insulating film then;
(b) the described interlayer insulating film of etching reaches the contact hole of described data line, described sweep trace and described public electrode wire with formation;
(c) deposit transparent metal on the entire product that is obtained by step (b) so that cover the inside surface of described contact hole with transparent metal, thereby forms described data line end, described sweep trace end and described public electrode thread end; And
(d) the described transparent metal of etching to form described public electrode, makes that described public electrode and described data line are overlapping.
73., it is characterized in that the described transparent metal of etching is in order further to form described pixel electrode in described step (d) as claim 71 or 72 described methods.
74. as claim 71 or 72 described methods, it is characterized in that described step (b) comprising: form the step of second contact hole of the source electrode that arrives described thin film transistor (TFT), and described step (c) comprises the step that covers the described second contact hole inside surface with described transparent metal.
75., it is characterized in that described step (b) comprising: the step that forms the 3rd contact hole that arrives described public electrode wire as claim 71 or 72 described methods; Described step (c) comprising: the step that covers the inside surface of described the 3rd contact hole with described transparent metal; And described step (d) comprises the step of the described transparent metal of etching, so that described public electrode is electrically connected with described the 3rd contact hole.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001350620A JP2002323706A (en) | 2001-02-23 | 2001-11-15 | Active matrix liquid crystal display device of transverse electric field system and method for manufacturing the same |
| JP350620/2001 | 2001-11-15 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100982800A Division CN100373246C (en) | 2001-11-15 | 2002-10-18 | Plane switch mode active matrix liquid crystal display device and mfg. method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1420386A true CN1420386A (en) | 2003-05-28 |
| CN1207617C CN1207617C (en) | 2005-06-22 |
Family
ID=19163087
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100982800A Expired - Lifetime CN100373246C (en) | 2001-11-15 | 2002-10-18 | Plane switch mode active matrix liquid crystal display device and mfg. method thereof |
| CN 02148009 Expired - Lifetime CN1207617C (en) | 2001-11-15 | 2002-10-18 | Plane switch mode active matrix liquid crystal display device and mfg. method thereof |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100982800A Expired - Lifetime CN100373246C (en) | 2001-11-15 | 2002-10-18 | Plane switch mode active matrix liquid crystal display device and mfg. method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (2) | CN100373246C (en) |
Cited By (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7304707B2 (en) | 2003-12-02 | 2007-12-04 | Lg.Philips Lcd Co., Ltd. | In-plane switching mode liquid crystal display device and method for fabricating the same |
| CN100374944C (en) * | 2003-12-03 | 2008-03-12 | Lg.菲利浦Lcd株式会社 | Liquid crystal display device and method of fabricating the same |
| CN100374943C (en) * | 2003-11-29 | 2008-03-12 | Lg.菲利浦Lcd株式会社 | In-plane switching mode liquid crystal display device |
| CN100399165C (en) * | 2004-02-26 | 2008-07-02 | Nec液晶技术株式会社 | Liquid crystal display device and method of fabricating the same |
| CN100405142C (en) * | 2004-02-16 | 2008-07-23 | 精工爱普生株式会社 | Electro-optical device and electronic apparatus |
| CN100432810C (en) * | 2004-01-08 | 2008-11-12 | Nec液晶技术株式会社 | Liquid crystal display device |
| CN100437303C (en) * | 2003-09-09 | 2008-11-26 | 三星电子株式会社 | Thin film transistor array panel and liquid crystal display device including the array panel |
| CN101055361B (en) * | 2006-04-12 | 2010-09-22 | 日本电气株式会社 | Lateral electric field type liquid-crystal display device |
| CN101526704B (en) * | 2008-03-06 | 2011-06-15 | 索尼公司 | Liquid crystal divice and electronic equipment |
| CN102364390A (en) * | 2011-10-19 | 2012-02-29 | 深圳市华星光电技术有限公司 | Liquid crystal display (LCD) panel and method for forming same |
| CN101752308B (en) * | 2009-12-18 | 2012-04-04 | 友达光电股份有限公司 | Method for forming pixel structure |
| CN102707523A (en) * | 2012-04-20 | 2012-10-03 | 京东方科技集团股份有限公司 | Manufacturing method of array substrate as well as array substrate and display device |
| CN102998864A (en) * | 2011-09-07 | 2013-03-27 | 株式会社日本显示器东 | Liquid crystal display device |
| CN103293796A (en) * | 2012-03-19 | 2013-09-11 | 上海中航光电子有限公司 | Thin film transistor liquid crystal display in plane field switch control mode and repairing method thereof |
| CN103309099A (en) * | 2012-03-08 | 2013-09-18 | 乐金显示有限公司 | Liquid crystal display array substrate and method for manufacturing the same |
| WO2013155830A1 (en) * | 2012-04-20 | 2013-10-24 | 京东方科技集团股份有限公司 | Method for manufacturing array substrate, array substrate, and display device |
| TWI414866B (en) * | 2009-11-27 | 2013-11-11 | Au Optronics Corp | Method of forming pixel structure |
| CN103676376A (en) * | 2013-12-10 | 2014-03-26 | 深圳市华星光电技术有限公司 | Array substrate, manufacturing method of array substrate and liquid crystal display panel using array substrate |
| CN104865730A (en) * | 2015-05-26 | 2015-08-26 | 深圳市华星光电技术有限公司 | Liquid crystal displayer panel and array substrate |
| US9196747B2 (en) | 2005-06-22 | 2015-11-24 | Samsung Display Co., Ltd. | Light emitting display and thin film transistor (TFT) |
| CN104471472B (en) * | 2012-07-04 | 2017-03-15 | Nlt科技股份有限公司 | Liquid crystal indicator |
| WO2018040560A1 (en) * | 2016-08-31 | 2018-03-08 | 京东方科技集团股份有限公司 | Array substrate, display panel and display device |
| CN108417581A (en) * | 2018-03-01 | 2018-08-17 | 厦门天马微电子有限公司 | Array substrate, display panel and display device |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4326307B2 (en) * | 2003-11-19 | 2009-09-02 | 株式会社 日立ディスプレイズ | Liquid crystal display |
| JP5278777B2 (en) * | 2010-11-09 | 2013-09-04 | Ｎｌｔテクノロジー株式会社 | Liquid crystal display |
| JP5682385B2 (en) * | 2011-03-10 | 2015-03-11 | セイコーエプソン株式会社 | Electro-optical device and electronic apparatus |
| JP5674587B2 (en) | 2011-08-05 | 2015-02-25 | 株式会社ジャパンディスプレイ | Liquid crystal display |
| JP5806383B2 (en) * | 2012-02-27 | 2015-11-10 | 京セラ株式会社 | Liquid crystal display |
| CN104216129B (en) | 2014-09-12 | 2017-08-11 | 上海天马微电子有限公司 | A kind of display panel and display device |
| TWI567463B (en) * | 2015-10-14 | 2017-01-21 | 群創光電股份有限公司 | Display panels and electronic devices |
| TWI567451B (en) * | 2016-03-04 | 2017-01-21 | 友達光電股份有限公司 | Array substrate and in-plane switching liquid crystal display panel |
| CN113534519B (en) * | 2021-07-30 | 2023-03-24 | 惠科股份有限公司 | Liquid crystal display panel and display device |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100364771B1 (en) * | 1995-10-20 | 2003-04-07 | 엘지전자 주식회사 | Liquid crystal display and method for fabricating the same |
| US6219019B1 (en) * | 1996-09-05 | 2001-04-17 | Kabushiki Kaisha Toshiba | Liquid crystal display apparatus and method for driving the same |
| JP3087841B2 (en) * | 1996-10-29 | 2000-09-11 | 日本電気株式会社 | Wide viewing angle LCD |
| JP3120751B2 (en) * | 1996-11-06 | 2000-12-25 | 日本電気株式会社 | In-plane switching LCD |
| KR100262405B1 (en) * | 1997-06-27 | 2000-08-01 | 김영환 | Lcd device |
| KR100477130B1 (en) * | 1997-09-25 | 2005-08-29 | 삼성전자주식회사 | Thin Film Transistor Board and Manufacturing Method of Flat Drive Liquid Crystal Display |
| JP4130490B2 (en) * | 1997-10-16 | 2008-08-06 | 三菱電機株式会社 | Liquid crystal display |
| JP3712899B2 (en) * | 1999-09-21 | 2005-11-02 | 株式会社日立製作所 | Liquid crystal display device |
-
2002
- 2002-10-18 CN CNB2004100982800A patent/CN100373246C/en not_active Expired - Lifetime
- 2002-10-18 CN CN 02148009 patent/CN1207617C/en not_active Expired - Lifetime
Cited By (40)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100437303C (en) * | 2003-09-09 | 2008-11-26 | 三星电子株式会社 | Thin film transistor array panel and liquid crystal display device including the array panel |
| CN100374943C (en) * | 2003-11-29 | 2008-03-12 | Lg.菲利浦Lcd株式会社 | In-plane switching mode liquid crystal display device |
| CN100383650C (en) * | 2003-12-02 | 2008-04-23 | Lg.菲利浦Lcd株式会社 | In-plane switching mode liquid crystal display device and method for fabricating the same |
| US7304707B2 (en) | 2003-12-02 | 2007-12-04 | Lg.Philips Lcd Co., Ltd. | In-plane switching mode liquid crystal display device and method for fabricating the same |
| CN100374944C (en) * | 2003-12-03 | 2008-03-12 | Lg.菲利浦Lcd株式会社 | Liquid crystal display device and method of fabricating the same |
| CN100432810C (en) * | 2004-01-08 | 2008-11-12 | Nec液晶技术株式会社 | Liquid crystal display device |
| CN100405142C (en) * | 2004-02-16 | 2008-07-23 | 精工爱普生株式会社 | Electro-optical device and electronic apparatus |
| CN101276113B (en) * | 2004-02-16 | 2013-11-06 | 精工爱普生株式会社 | Electro-optical device and electronic apparatus |
| CN100399165C (en) * | 2004-02-26 | 2008-07-02 | Nec液晶技术株式会社 | Liquid crystal display device and method of fabricating the same |
| US7936428B2 (en) | 2004-02-26 | 2011-05-03 | Nec Lcd Technologies, Ltd | Liquid crystal display device with an electric-field shielding layer and method of fabricating the same |
| US9196747B2 (en) | 2005-06-22 | 2015-11-24 | Samsung Display Co., Ltd. | Light emitting display and thin film transistor (TFT) |
| CN101055361B (en) * | 2006-04-12 | 2010-09-22 | 日本电气株式会社 | Lateral electric field type liquid-crystal display device |
| US11126041B2 (en) | 2008-03-06 | 2021-09-21 | Japan Display Inc. | Liquid crystal device and electronic apparatus |
| US10942400B2 (en) | 2008-03-06 | 2021-03-09 | Japan Display Inc. | Liquid crystal device and electronic apparatus |
| US10353250B2 (en) | 2008-03-06 | 2019-07-16 | Japan Display Inc. | Liquid crystal device and electronic apparatus |
| US9766515B2 (en) | 2008-03-06 | 2017-09-19 | Japan Display Inc. | Liquid crystal device and electronic apparatus |
| US9310654B2 (en) | 2008-03-06 | 2016-04-12 | Japan Display Inc. | Liquid crystal device and electronic apparatus |
| US11835827B2 (en) | 2008-03-06 | 2023-12-05 | Japan Display Inc. | Liquid crystal device and electronic apparatus |
| CN101526704B (en) * | 2008-03-06 | 2011-06-15 | 索尼公司 | Liquid crystal divice and electronic equipment |
| TWI414866B (en) * | 2009-11-27 | 2013-11-11 | Au Optronics Corp | Method of forming pixel structure |
| CN101752308B (en) * | 2009-12-18 | 2012-04-04 | 友达光电股份有限公司 | Method for forming pixel structure |
| CN102998864A (en) * | 2011-09-07 | 2013-03-27 | 株式会社日本显示器东 | Liquid crystal display device |
| CN102998864B (en) * | 2011-09-07 | 2015-12-16 | 株式会社日本显示器东 | Liquid crystal indicator |
| CN102364390A (en) * | 2011-10-19 | 2012-02-29 | 深圳市华星光电技术有限公司 | Liquid crystal display (LCD) panel and method for forming same |
| CN103309099A (en) * | 2012-03-08 | 2013-09-18 | 乐金显示有限公司 | Liquid crystal display array substrate and method for manufacturing the same |
| CN103309099B (en) * | 2012-03-08 | 2015-10-14 | 乐金显示有限公司 | LCD (Liquid Crystal Display) array substrate and manufacture method thereof |
| CN103293796B (en) * | 2012-03-19 | 2015-09-23 | 上海中航光电子有限公司 | The Thin Film Transistor-LCD of crystal display in plane field switch control mode and restorative procedure thereof |
| CN103293796A (en) * | 2012-03-19 | 2013-09-11 | 上海中航光电子有限公司 | Thin film transistor liquid crystal display in plane field switch control mode and repairing method thereof |
| WO2013155845A1 (en) * | 2012-04-20 | 2013-10-24 | 京东方科技集团股份有限公司 | Method for manufacturing array substrate, array substrate, and display device |
| WO2013155830A1 (en) * | 2012-04-20 | 2013-10-24 | 京东方科技集团股份有限公司 | Method for manufacturing array substrate, array substrate, and display device |
| CN102707523A (en) * | 2012-04-20 | 2012-10-03 | 京东方科技集团股份有限公司 | Manufacturing method of array substrate as well as array substrate and display device |
| CN104471472B (en) * | 2012-07-04 | 2017-03-15 | Nlt科技股份有限公司 | Liquid crystal indicator |
| CN103676376B (en) * | 2013-12-10 | 2016-01-06 | 深圳市华星光电技术有限公司 | Array base palte and preparation method thereof and apply the display panels of this array base palte |
| CN103676376A (en) * | 2013-12-10 | 2014-03-26 | 深圳市华星光电技术有限公司 | Array substrate, manufacturing method of array substrate and liquid crystal display panel using array substrate |
| WO2016187903A1 (en) * | 2015-05-26 | 2016-12-01 | 深圳市华星光电技术有限公司 | Liquid crystal panel and array substrate |
| CN104865730A (en) * | 2015-05-26 | 2015-08-26 | 深圳市华星光电技术有限公司 | Liquid crystal displayer panel and array substrate |
| WO2018040560A1 (en) * | 2016-08-31 | 2018-03-08 | 京东方科技集团股份有限公司 | Array substrate, display panel and display device |
| US10203570B2 (en) | 2016-08-31 | 2019-02-12 | Boe Technology Group Co., Ltd. | Array substrate, display panel and display device |
| CN108417581A (en) * | 2018-03-01 | 2018-08-17 | 厦门天马微电子有限公司 | Array substrate, display panel and display device |
| CN108417581B (en) * | 2018-03-01 | 2021-09-28 | 厦门天马微电子有限公司 | Array substrate, display panel and display device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1207617C (en) | 2005-06-22 |
| CN100373246C (en) | 2008-03-05 |
| CN1641454A (en) | 2005-07-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1207617C (en) | Plane switch mode active matrix liquid crystal display device and mfg. method thereof | |
| CN1221845C (en) | Active-matrix addressing LCD device using laterial electric field | |
| CN1261805C (en) | Liquid crystal display | |
| CN1287207C (en) | Plane internal switch mode active matrix liquid crystal display device and mfg. method thereof | |
| CN1173216C (en) | Liquid crystal display having modified electrode array | |
| CN1188736C (en) | LCD device | |
| CN1244843C (en) | Substrate for liquid crystal display and liquid crystal display device with same | |
| CN1627171A (en) | LCD device and its mfg. method | |
| CN1291271C (en) | Liquid crystal display device | |
| CN1178099C (en) | LCD device | |
| CN1237386C (en) | Liquid crystal display | |
| CN1208671C (en) | Liquid-crystal display device | |
| CN1495492A (en) | Active matrix vertical orientation mode liquid crystal display and its driving method | |
| CN101042445A (en) | Color filter, method of fabricating the same and liquid-crystal display device | |
| CN1802599A (en) | Display device | |
| CN1573476A (en) | High quality and ultra large screen liquid crystal display device and production method thereof | |
| CN101075584A (en) | Method of manufacturing LCD apparatus by using halftone exposure method | |
| CN1652000A (en) | Liquid crystal display and method for fabricating the same | |
| CN1945391A (en) | Liquid crystal display | |
| CN1800918A (en) | Substrate for liquid crystal display and liquid crystal display having the same | |
| CN1758095A (en) | Liquid crystal display device | |
| CN1873508A (en) | Display panel and liquid crystal display apparatus including the same | |
| CN101042503A (en) | Liquid crystal display device | |
| CN1900797A (en) | Liquid crystal display apparatus | |
| CN1782831A (en) | Liquid crystal display and its producing method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| ASS | Succession or assignment of patent right |
Owner name: NIPPON ELECTRIC CO Free format text: FORMER OWNER: NIPPON ELECTRIC CO., LTD. Effective date: 20030806 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20030806 Address after: Kanagawa, Japan Applicant after: NEC LCD Technologies, Ltd. Address before: Tokyo, Japan Applicant before: NEC Corp. |
|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee |
Owner name: NEC LCD TECHNOLOGIES, LTD. Free format text: FORMER NAME: NEC LCD TECH CORP. |
|
| CP01 | Change in the name or title of a patent holder |
Address after: Kanagawa, Japan Patentee after: NLT TECHNOLOGIES, Ltd. Address before: Kanagawa, Japan Patentee before: NEC LCD Technologies, Ltd. |
|
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20050622 |