Connect public, paid and private patent data with Google Patents Public Datasets

半导体器件的制造方法

Info

Publication number
CN1414615A
CN1414615A CN 01104515 CN01104515A CN1414615A CN 1414615 A CN1414615 A CN 1414615A CN 01104515 CN01104515 CN 01104515 CN 01104515 A CN01104515 A CN 01104515A CN 1414615 A CN1414615 A CN 1414615A
Authority
CN
Grant status
Application
Patent type
Prior art keywords
manufacturing
method
semiconductor
device
manufacturing method
Prior art date
Application number
CN 01104515
Other languages
English (en)
Other versions
CN1214450C (zh )
Inventor
山崎舜平
张宏勇
石原浩朗
Original Assignee
株式会社半导体能源研究所
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
    • G02B27/00Other optical systems; Other optical apparatus
    • G02B27/09Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58After-treatment
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58After-treatment
    • C23C14/5806Thermal treatment
    • C23C14/5813Thermal treatment using lasers
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56After-treatment
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
    • G02B27/00Other optical systems; Other optical apparatus
    • G02B27/09Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0938Using specific optical elements
    • G02B27/095Refractive optical elements
    • G02B27/0955Lenses
    • G02B27/0966Cylindrical lenses
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2022Epitaxial regrowth of non-monocrystalline semiconductor materials, e.g. lateral epitaxy by seeded solidification, solid-state crystallization, solid-state graphoepitaxy, explosive crystallization, grain growth in polycrystalline materials
    • H01L21/2026Epitaxial regrowth of non-monocrystalline semiconductor materials, e.g. lateral epitaxy by seeded solidification, solid-state crystallization, solid-state graphoepitaxy, explosive crystallization, grain growth in polycrystalline materials using a coherent energy beam, e.g. laser or electron beam
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation
    • H01L21/265Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation
    • H01L21/268Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259Multistep manufacturing methods
    • H01L27/127Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
    • H01L27/1274Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
    • H01L27/1285Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2022Epitaxial regrowth of non-monocrystalline semiconductor materials, e.g. lateral epitaxy by seeded solidification, solid-state crystallization, solid-state graphoepitaxy, explosive crystallization, grain growth in polycrystalline materials
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body

Abstract

一种制造半导体器件的方法,其特征在于,它包括下列步骤:在整个玻璃衬底上制备多个半导体岛;将所述半导体岛都掺以离子;将具有在一个方向上的细长截面的脉动准分子激光束对准所述玻璃衬底;沿垂直于所述脉动准分子激光束伸长方向的方向移动所述玻璃衬底,从而用所述脉动准分子激光束照射所述半导体岛。

Description

半导体器件的制造方法

本发明涉及一种适于用在半导体器件成批生产中的、高生产率条件下能实现均匀退火的、高可靠的激光退火方法。更具体地说,本发明提供一种其晶性由于在诸如离子照射(ion irradiation)、离子注入和离子掺杂等工艺中受到损伤而严重地劣化的淀积薄膜的激光退火方法。

如今,对降低制造半导体器件中的加工温度的方法正广泛地进行研究。对低温加工方法如此积极地研究的原因部分地归因于在例如玻璃制造的绝缘衬底上制备半导体器件所提出的要求。激光退火技术被认为是有前途的主要低温加工方法。

但是,激光退火的条件尚未确定,因为传统的激光退火方法是各自独立地在不同条件下进行的,这些条件取决于在每个方法中独立地选择的装置和涂敷条件。这就使得许多人错误地认为,激光退火技术不能给出可靠和一致得足以使该方法实际可行的结果。因此,本发明的目的在于首次建立能给出高度再现的结果的激光退火方法的条件。

在制造半导体器件的方法中,淀积薄膜极大地受到诸如离子照射、离子注入和离子掺杂等工艺过程的损伤,并由此在晶性方面遭到破坏,从而产生远非所说的半导体的非晶相或类似态。所以,为了将激光退火用于激活这种被损伤的薄膜,本发明人对如何使激光退火的条件最佳化进行了深入的研究。在该研究期间已发现,最佳条件的变化不仅受激光束的能量控制的影响,而且还受薄膜中所含有的杂质以及所加激光束的脉冲发射的次数的影响。

采用本发明的方法激活的淀积薄膜是那些含有作为主要成份的周期表的IV族元素,例如硅、锗、硅和锗的合金,或IV族元素的化合物如碳化硅的淀积薄膜。所淀积的薄膜的厚度为100至10000。考虑到光传输,已完全确认,采用处于短波长范围的特别是400nm或更短波长的激光束能很好地实现这种薄膜的激光退火。

本发明和方法包括以下步骤:将具有400nm或更短波长和50nsec或更窄脉宽的激光脉冲照射到薄膜上,该薄膜含有从碳、硅、锗、锡和铅所构成的组中选出的IV族元素以及掺入其中的杂质离子。

其中在所说激光脉冲到达所述含有IV族元素的薄膜的路程中,在所述含有IV族元素的薄膜上形成厚度为3至300nm的透明薄膜,所述激光脉冲的每一个的能量密度E以mJ/cm2为单位和所述激光脉冲数N满足关系式:log10N≤-0.02(E-350)。

从由KrF激发物激光器、ArF激发物激光器、XeCl激发物激光器和XeF激发物激光器构成的组中选出的一种激光器发射激光脉冲。杂质离子的掺入是采用离子照射、离子注入和离子掺杂等工艺实现的。含有IV族元素的薄膜形成在绝缘衬底上,并且该绝缘衬底在照射步骤期间被保持在室温至500℃的温度。

业已确认,采用具有足够高至激活的能量密度的激光束能降低薄层电阻。在含有作为杂质的磷的薄膜的情况下,这种趋势必然能观察到。然而,在含有作为杂质的硼的薄膜中,该薄膜由于这种高能量密度的激光的照射而受到损伤。此外,脉冲发射数的增加减少了激光退火薄膜的特性的波动被认为是理所当然的事。但是,这是不确切的,因为已经发现,由于增加发射数目使微观波动增强,涂层的结构劣化了。

这可解释为是由于重复加到薄膜上的激光束照射引起的涂层内的晶核生长所致。结果,在涂层内出现粒状大小在0.1至1μm尺寸范围内的分布,而该涂层以前是由均匀尺寸的晶粒所组成的。当采用高能激光照射时,此现象尤其明显。

业已发现,所淀积的薄膜(即半导体薄膜)必须涂敷(覆盖)3至300nm厚的光传输涂层,而不能暴露在大气中。从传输光束的观点看,该光传输涂层优先选用氧化硅或氮化硅制造。最好采用主要含有氧化硅的材料,因为通常它也可用作栅绝缘材料。无需说明,此光传输薄膜可以掺磷或硼,以钝化可移动离子。如果含有IV族元素的薄膜未涂敷这种光传输涂层,将会发生均匀性以加速方式被破坏的现象。

还已发现,在上述条件下并且又满足以下关系式时:log10N≤A(E-B)采用脉冲式激光束能获得更为光滑(均匀)的涂层,这里E(mJ/cm2)是所照射的每一激光脉冲的能量密度,N(发射数)是脉冲式激光的发射数目。A和B的值取决于掺入涂层中的杂质。当磷作为杂质存在时,选A为-0.02,B为350,当采用硼作为杂质时,选A为-0.02,B为300。

采用透明的衬底替代透明的薄膜能得到相似的结果。也就是说,按照本发明的激光加工方法包括以下步骤:将杂质掺入在透明衬底上形成的半导体薄膜中;并且将波长为400nm或更短和脉宽为50nsec或更窄的激光脉冲穿过所述透明衬底照射至所述半导体薄膜上;其中,单位为mJ/cm2的所述激光脉冲的每一个的能量密度E和所述激光脉冲的数目N满足关系式:log10N≤-0.02(E-350)。

图7(A)示出掺入步骤,图7(B)示出照射步骤。参照数字71代表透明衬底,72代表半导体薄膜。

以下是附图的简要说明。

图1是用于本发明的实施例中的激光退火装置的原理图;图2是按照本发明的一个实施例由激光退火所获得的硅薄膜(掺磷,N型)的薄层电阻与所加的激光能量密度之间在改变脉冲发射的重复次数时的关系图;图3是按照本发明的一个实施例由激光退火所获得的硅薄膜(掺磷和硼,P型)的薄层电阻与所加的激光能量密度之间在改变脉冲发射的重复次数时的关系图;图4是在本发明的一个实施例中获得的硅薄膜的结构与所加的激光能量密度以及脉冲发射的重复次数之间的关系图;图5为用于本发明的实施例中的激光退火装置的光学系统的原理图;图6示出按照本发明的激光退火方法;和图7示出按照本发明的另一种激光退火方法。

下面参考非限制性实例,以更详细的方式描述本发明,不过,应当指出,不能将本发明解释成限于该实例。

在此实例中,将杂质掺入由IV族元素组成的薄膜中,以使其具有N型和P型导电的一种,将另一种杂质用掩摸掺入该薄膜的一部分中,使所述部分具有N型和P型导电的其余一种。在图1中,原理性地示出了用于本实施的激光退火装置。激光束在发生器2中产生,在通过全反射镜5和6之后,在放大器3中被放大,并在通过全反射镜7和8之后被引入光学系统4。初始激光束具有约3×2cm2的矩形束面积,但借助光学系统4被加工成长光束,其长约为10至30cm,宽约0.1至1cm。通过此光学系统的激光的最大能量密度为1000mJ/单发射。

光学系统4中的光路示于图5中。入射于光学系统4上的激光通过柱形凹透镜A、柱形凸透镜B、水平方向设置的蝇眼透镜C和垂直方向设置的蝇眼透镜D。依靠蝇眼透镜C和D,激光从初始的高斯分布变成矩形分布。接着,激光通过柱形凸透镜E和F,并在反射镜G(图1中反射镜9)上被反射,最后通过柱形透镜H聚焦在样品上。

在此实例中,图5所示的距离X1和X2是固定的,而虚焦点I(由蝇眼透镜的弯曲表面之间的差所产生)和反射镜G之间的距离X3、距离X4和X5是变化的,以便调节放大率M和焦距F。即:M=(X3+X4)/X51/F=1/(X3+X4)+1/X5。

在此实例中,光路的总长度X6为约1.3m。

如以上所述,初始光束被改进成长形光束,以改善其加工性能。更准确地说,在离开光学系统之后,通过全反射镜9照射在样品11上的矩形光束与样品的宽度相比有更大的宽度,因此,样品仅需沿一个方向运动。所以,装载样品的平台和驱动装置10可以做成简单的结构,因此其维修工作能容易地完成。此外,在安装样品时调整工作也能大大地被简化。

另一方面,若采用方形横截面的光束,则由单个光束覆盖整个衬底将是不可能的。于是,样品应沿两个方向作两维运动。在此情况下,平台的驱动装置将变得复杂,同时调整也必须按二维的方式进行,这就带来许多的困难。特别是以手工方式进行调整时,此工序要耗费相当多的时间,从而大大地降低了整个工艺过程的些产率。此外,这些装置必须安装在象抗振工作台之类的稳固的工作台1上。

用在本实例中的样品是不同型号的玻璃衬底(例如,康宁(Corning)#7059玻璃衬底),其长度为100mm,宽度为100-300mm。在此加工方法中采用能发射248nm波长和50nsec或更窄脉宽的光的KrF激光器。

用等离子加速CVD(化学汽相淀积)工艺在玻璃衬底61上淀积100nm厚的非晶硅薄膜。所得到的薄膜在600℃下退火48小时,以获得结晶薄膜,并且所得到的薄膜被构图,以形成岛形部分62和63(图6(A))。进一步,用溅射法在上面淀积70nm厚的氧化硅薄膜(光传输涂层)64,并且衬底的整个表面用磷掺杂。在此步骤中采用通常所说的离子掺杂工艺(图6(B)),使用磷化氢(PH3)作为等离子源和80KV的加速电压。然后,将衬底的一部分65掩盖住,用离子掺杂工艺注入硼(图6(C))。在此步骤中采用乙硼烷(B2H6)作等离子源并在65KV电压下加速。更准确地说,通过光传输涂层,磷被注入(掺入)到所掩盖的部分,从而获得了具有N型导电的部分,而磷和硼通过光传输涂层被注入(掺入)到未掩盖的部分,结果形成具有P型导电的部分。

其后,在改变能量密度和脉冲发射的数目的同时,将激光束照射到岛形部分(半导体薄膜)上,以实现激光激活。对薄层电阻相应地进行测量,并通过光学显微镜观察构成涂层的晶体的结构。在图2至4中概括了得到的结果。

图2示出了用磷离子掺杂的硅薄膜的薄层电阻在改变脉冲发射的重复数时与激光束的能量密度的关系图。在2×1015cm-2的剂量下,将磷掺到硅薄膜中。采用在200mJ/cm2或更小的能量密度下运行的激光器,为激活薄层需要大量的发射数目,还会产生约10KΩ/sq.的高薄层电阻的不良结果。但是,采用具有200mJ/cm2或更高的能量密度的激光束,在1至10次发射的激光器运行条件下就可实现充分的激活。

图3示出在4×1015cm-2剂量下激光激活由硼离子掺杂的硅薄膜的结果。在此情况下,采用200mJ/cm2或更小的能量密度,只能进行不充分的激活,对于充分的激活而言,需要大的脉冲发射数目。采用运行在200至300mJ/cm2的能量密度的激光束,通过1至10次发射就得到足够低的薄层电阻。但是,从另一方面来说,采用运行在300mJ/cm2或更高的能量密度下的激光器,薄层电阻反而会增大。特别是,与采用200mJ/cm2或更低的激光束能量密度激活的情形相反,随着增加脉冲发射的重复次数,薄层电阻会增加。这个现象可解释成是由于薄膜的均匀性破坏使晶粒边界生长所造成的,而薄膜均匀性的破坏是因为采用太多发射数的激光照射所致。

在实际工艺中,激光退火同时用于P型和N型区,如图6(D)所示。这就意味着以350mJ/cm2的能量密度照射的激光束充分地激活N型区,但同时损害了P型区的性能。因此,在根据本实例的工艺中,激光优选工作在200至300mJ/cm2的能量密度范围内,最好在250至300mJ/cm2的范围内。脉冲重复数最好在1至100个脉冲的范围内。

如以上所述的那样,淀积薄膜的结构显著地受到激光退火的影响。事实上,如图4所示,脉冲发射的数目能够与激光束能量密度和薄膜结构相联系。在图4中,用语“退火脉冲”是指激光束脉冲发射的数目。图中的实心圆代表在掺磷的硅上观察到表面结构变化的点,而空心圆代表在掺硼的硅上的相同情况。图的右侧上部区域相应于表面上出现不良结构(粗糙表面)的情况,而图的左侧下部区域相应于表面上出现良好结构(平滑表面)的情况。从该结果可以看出,掺磷的硅对激光照射具有强的耐性。因此,在不损伤表面结构的情况下进行激光退火的条件可以理解成是满足关系式:log10N≤A(E-B)这里,E(mJ/cm2)是所照射的激光束的能量密度,N(发射数)是脉冲式激光器的发射的数目。在磷作为杂质被掺入时,A和B的值是A=-0.02,B=350,而当硼作为杂质被掺入时,A=-0.02,B=300。

当淀积薄膜的结构受到相当大的损伤时,此特征值由于硅性能局部出现严重下降而呈现大的分散(Scattering)。事实上,在有缺陷的结构(粗糙表面)的硅薄膜上,观察到薄层电阻的分散高达20%或更多。通过满足以上的条件并将激光能量密度设定为适当的值,能够消除这种分散。

例如,当激光能量密度设定为250mJ/cm2时,脉冲式激光束以10次或更低的频率发射。如果能量密度提高到280mJ/cm2,激光束最好以1至3次的频率发射。通过在这种条件下激光退火,薄层电阻的变化可控制在10%或更小的范围内。

根据本发明,通过如前面所述的那样设定激光退火的最佳条件,获得了具有低的性能变化的高可靠半导体薄膜。因此可以看出,根据本发明的加工方法对半导体工业是有益的。

虽然参照特定实施例详细地描述了本发明,但很明显,对本领域的技术人员来说,在不脱离本发明的构思和范围的情况下,可进行各种变换和修改。

Claims (20)

1.一种制造半导体器件的方法,其特征在于,它包括下列步骤:在整个玻璃衬底上制备多个半导体岛;将所述半导体岛都掺以离子;将具有在一个方向上的细长截面的脉动准分子激光束对准所述玻璃衬底;沿垂直于所述脉动准分子激光束伸长方向的方向移动所述玻璃衬底,从而用所述脉动准分子激光束照射所述半导体岛。
2.如权利要求1所述的方法,其特征在于,所述脉动准分子激光束的能量密度不大于300毫焦耳/平方厘米。
3.如权利要求1所述的方法,其特征在于,通过所述离子掺入有选择地将选自由磷和硼组成的元素群的一种杂质加入所述多个半导体岛中。
4.如权利要求1所述的方法,其特征在于,各所述半导体岛用所述脉动准分子激光束的多个脉冲照射。
5.一种制造半导体器件的方法,其特征在于,它包括下列步骤:在整个玻璃衬底上形成半导体膜;晶化所述半导体膜;将晶化过的半导体膜摹制成多个半导体岛;将所述半导体岛都掺以离子;将具有在一个方向上的细长的截面的脉动准分子激光束对准所述玻璃衬底;沿垂直于所述脉动准分子激光束的延伸方向的方向移动所述玻璃衬底,从而用所述脉动准分子激光束照射所述半导体岛。
6.如权利要求5所述的方法,其特征在于,所述脉动准分子激光束的能量密度不大于300毫焦耳/平方厘米。
7.如权利要求5所述的方法,其特征在于,通过所述离子掺入有选择地将选自由磷和硼组成的元素群的一种杂质加入所述多个半导体岛中。
8.如权利要求5所述的方法,其特征在于,各所述半导体岛用所述脉动准分子激光束的多个脉冲照射。
9.一种制造半导体器件的方法,其特征在于,它包括下列步骤:在整个玻璃衬底上制备多个第一半导体岛和多个第二半导体岛;对所述第一和第二半导体岛都进行第一离子掺入,以加入第一种杂质;只对所述第一半导体岛进行第二离子掺入,以加入第二种杂质,其中所述第二种杂质的导电类型与所述第一种杂质的相反;将具有在一个方向上的细长截面的脉动准分子激光束对准所述玻璃衬底;沿垂直于所述脉动准分子激光束延伸方向的方向移动所述玻璃衬底,从而用所述脉动准分子激光束照射所述第一和第二半导体岛。
10.如权利要求9所述的方法,其特征在于,所述脉动准分子激光束的能量密度不大于300毫焦耳/平方厘米。
11.如权利要求9所述的方法,其特征在于,所述第一种杂质为磷,第二种杂质为硼。
12.如权利要求9所述的方法,其特征在于,各所述第一和第二半导体岛都用所述脉动准分子激光束的多个脉冲照射。
13.一种制造半导体器件的方法,其特征在于,它包括下列步骤:在整个玻璃衬底上制备多个半导体岛;在整个玻璃衬底上形成含氧化硅的膜,其中所述半导体岛都被所述膜覆盖住;通过所述膜对所述半导体岛进行离子掺入;将具有在一个方向上的细长截面的脉动准分子激光束对准所述玻璃衬底;沿垂直于所述脉动准分子激光束的延伸方向的方向移动所述玻璃衬底,从而通过所述膜用所述脉动准分子激光束照射所述半导体岛。
14.如权利要求13所述的方法,其特征在于,所述脉动准分子激光束的能量密度不大于300毫焦耳/平方厘米。
15.如权利要求13所述的方法,其特征在于,通过所述离子掺入,有选择地将选自由磷和硼组成的元素群的一种杂质加入所述多个半导体岛中。
16.如权利要求13所述的方法,其特征在于,各所述半导体岛用所述脉动准分子激光束的多个脉冲照射。
17.一种制造半导体器件的方法,其特征在于,它包括下列步骤:在整个衬底上制备多个含硅和锗的半导体岛;将所述半导体岛都掺以离子;将具有在一个方向上的细长截面的脉动准分子激光束对准所述玻璃衬底;沿垂直于所述脉动准分子激光束的延伸方向的方向移动所述玻璃衬底,从而用所述脉动准分子激光束照射所述半导体岛。
18.如权利要求17所述的方法,其特征在于,通过所述离子掺入,有选择地将选自由磷和硼组成的元素群的一种杂质加入所述多个半导体岛中。
19.一种制造半导体器件的方法,其特征在于,它包括下列步骤:在整个衬底上制备多个含硅和锗的半导体岛;在整个所述玻璃衬底上形成含氧化硅的膜;通过所述膜将所述半导体岛都掺以离子;将具有在一个方向上的细长截面的脉动准分子激光束对准所述玻璃衬底;沿垂直于所述脉动准分子激光束的延伸方向的方向移动所述玻璃衬底,从而通过所述膜用所述脉动准分子激光束照射所述半导体岛。
20.如权利要求19所述的制造半导体器件的方法,其特征在于,各所述半导体岛用所述脉动准分子激光束的多个脉冲照射。
CN 01104515 1992-06-26 2001-02-10 半导体器件的制造方法 CN1214450C (zh)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP19300592 1992-06-26
JP25229592 1992-08-27

Publications (2)

Publication Number Publication Date
CN1414615A true true CN1414615A (zh) 2003-04-30
CN1214450C CN1214450C (zh) 2005-08-10

Family

ID=26507640

Family Applications (7)

Application Number Title Priority Date Filing Date
CN 200610101655 CN1921069B (zh) 1992-06-26 1993-06-26 用激光束照射半导体层的激光加工装置
CN 93109565 CN1076864C (zh) 1992-06-26 1993-06-26 激光加工方法
CN 95108719 CN1108225C (zh) 1992-06-26 1995-07-26 光学系统
CN 99126726 CN1139105C (zh) 1992-06-26 1999-12-11 半导体层激光退火的方法
CN 01104514 CN1350322A (zh) 1992-06-26 2001-02-10 用激光束照射半导体层的激光加工装置
CN 01104516 CN1216404C (zh) 1992-06-26 2001-02-10 半导体器件的制造方法
CN 01104515 CN1214450C (zh) 1992-06-26 2001-02-10 半导体器件的制造方法

Family Applications Before (6)

Application Number Title Priority Date Filing Date
CN 200610101655 CN1921069B (zh) 1992-06-26 1993-06-26 用激光束照射半导体层的激光加工装置
CN 93109565 CN1076864C (zh) 1992-06-26 1993-06-26 激光加工方法
CN 95108719 CN1108225C (zh) 1992-06-26 1995-07-26 光学系统
CN 99126726 CN1139105C (zh) 1992-06-26 1999-12-11 半导体层激光退火的方法
CN 01104514 CN1350322A (zh) 1992-06-26 2001-02-10 用激光束照射半导体层的激光加工装置
CN 01104516 CN1216404C (zh) 1992-06-26 2001-02-10 半导体器件的制造方法

Country Status (4)

Country Link
US (7) US5897799A (zh)
JP (10) JPH06124913A (zh)
KR (6) KR970005141B1 (zh)
CN (7) CN1921069B (zh)

Families Citing this family (92)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6149988A (en) * 1986-09-26 2000-11-21 Semiconductor Energy Laboratory Co., Ltd. Method and system of laser processing
US6261856B1 (en) * 1987-09-16 2001-07-17 Semiconductor Energy Laboratory Co., Ltd. Method and system of laser processing
JPH06124913A (ja) 1992-06-26 1994-05-06 Semiconductor Energy Lab Co Ltd レーザー処理方法
US5643801A (en) * 1992-11-06 1997-07-01 Semiconductor Energy Laboratory Co., Ltd. Laser processing method and alignment
CN1052566C (zh) 1993-11-05 2000-05-17 株式会社半导体能源研究所 制造半导体器件的方法
US6897100B2 (en) 1993-11-05 2005-05-24 Semiconductor Energy Laboratory Co., Ltd. Method for processing semiconductor device apparatus for processing a semiconductor and apparatus for processing semiconductor device
US6096581A (en) 1994-03-09 2000-08-01 Semiconductor Energy Laboratory Co., Ltd. Method for operating an active matrix display device with limited variation in threshold voltages
US6723590B1 (en) 1994-03-09 2004-04-20 Semiconductor Energy Laboratory Co., Ltd. Method for laser-processing semiconductor device
US6300176B1 (en) * 1994-07-22 2001-10-09 Semiconductor Energy Laboratory Co., Ltd. Laser processing method
JP3469337B2 (ja) 1994-12-16 2003-11-25 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6130120A (en) * 1995-01-03 2000-10-10 Goldstar Electron Co., Ltd. Method and structure for crystallizing a film
US5854803A (en) * 1995-01-12 1998-12-29 Semiconductor Energy Laboratory Co., Ltd. Laser illumination system
CN1134831C (zh) * 1995-02-02 2004-01-14 应用材料有限公司 激光退火方法
US5893990A (en) 1995-05-31 1999-04-13 Semiconductor Energy Laboratory Co. Ltd. Laser processing method
US6524977B1 (en) 1995-07-25 2003-02-25 Semiconductor Energy Laboratory Co., Ltd. Method of laser annealing using linear beam having quasi-trapezoidal energy profile for increased depth of focus
JP2007251196A (ja) * 1995-07-25 2007-09-27 Semiconductor Energy Lab Co Ltd レーザー光照射装置及び半導体装置の作製方法
JP3917231B2 (ja) 1996-02-06 2007-05-23 株式会社半導体エネルギー研究所 レーザー照射装置およびレーザー照射方法
US6599790B1 (en) 1996-02-15 2003-07-29 Semiconductor Energy Laboratory Co., Ltd Laser-irradiation method and laser-irradiation device
JPH09234579A (ja) * 1996-02-28 1997-09-09 Semiconductor Energy Lab Co Ltd レーザー照射装置
US6759628B1 (en) * 1996-06-20 2004-07-06 Sony Corporation Laser annealing apparatus
US6040019A (en) * 1997-02-14 2000-03-21 Advanced Micro Devices, Inc. Method of selectively annealing damaged doped regions
JPH10253916A (ja) 1997-03-10 1998-09-25 Semiconductor Energy Lab Co Ltd レーザー光学装置
JP3770999B2 (ja) * 1997-04-21 2006-04-26 株式会社半導体エネルギー研究所 レーザー照射装置及びレーザー照射方法
JP3462053B2 (ja) * 1997-09-30 2003-11-05 株式会社半導体エネルギー研究所 ビームホモジェナイザーおよびレーザー照射装置およびレーザー照射方法および半導体デバイス
JPH11186189A (ja) * 1997-12-17 1999-07-09 Semiconductor Energy Lab Co Ltd レーザー照射装置
JP4663047B2 (ja) * 1998-07-13 2011-03-30 株式会社半導体エネルギー研究所 レーザー照射装置及び半導体装置の作製方法
US6246524B1 (en) 1998-07-13 2001-06-12 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer, laser irradiation apparatus, laser irradiation method, and method of manufacturing semiconductor device
US7061959B2 (en) * 2001-04-18 2006-06-13 Tcz Gmbh Laser thin film poly-silicon annealing system
US7009140B2 (en) * 2001-04-18 2006-03-07 Cymer, Inc. Laser thin film poly-silicon annealing optical system
KR100430231B1 (ko) * 1998-10-02 2004-07-19 엘지.필립스 엘시디 주식회사 레이저어닐장비
EP1003207B1 (en) 1998-10-05 2016-09-07 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus, laser irradiation method, beam homogenizer, semiconductor device, and method of manufacturing the semiconductor device
US6204160B1 (en) * 1999-02-22 2001-03-20 The United States Of America As Represented By The Secretary Of The Navy Method for making electrical contacts and junctions in silicon carbide
US6393042B1 (en) 1999-03-08 2002-05-21 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer and laser irradiation apparatus
JP3562389B2 (ja) * 1999-06-25 2004-09-08 三菱電機株式会社 レーザ熱処理装置
JP4827276B2 (ja) * 1999-07-05 2011-11-30 株式会社半導体エネルギー研究所 レーザー照射装置、レーザー照射方法及び半導体装置の作製方法
US7160765B2 (en) * 1999-08-13 2007-01-09 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
US6730550B1 (en) 1999-08-13 2004-05-04 Semiconductor Energy Laboratory Co., Ltd. Laser apparatus, laser annealing method, and manufacturing method of a semiconductor device
US6567219B1 (en) 1999-08-13 2003-05-20 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus
US6744008B1 (en) * 1999-08-18 2004-06-01 Semiconductor Energy Laboratory Co., Ltd. Laser apparatus and laser annealing method
US6548370B1 (en) 1999-08-18 2003-04-15 Semiconductor Energy Laboratory Co., Ltd. Method of crystallizing a semiconductor layer by applying laser irradiation that vary in energy to its top and bottom surfaces
KR100319455B1 (ko) 1999-12-24 2002-01-05 오길록 결정화 장비용 광학 시스템
US6872607B2 (en) * 2000-03-21 2005-03-29 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US7078321B2 (en) 2000-06-19 2006-07-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US6650480B2 (en) 2000-09-01 2003-11-18 Semiconductor Energy Laboratory Co., Ltd. Method of processing beam, laser irradiation apparatus, and method of manufacturing semiconductor device
JP4921643B2 (ja) * 2001-02-22 2012-04-25 株式会社Ihi 照明光学系及びこれを備えるレーザー処理装置
US20060146906A1 (en) * 2004-02-18 2006-07-06 Cymer, Inc. LLP EUV drive laser
US6707614B2 (en) * 2001-06-15 2004-03-16 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation stage, laser irradiation optical system, laser irradiation apparatus, laser irradiation method, and method of manufacturing a semiconductor device
US7868267B2 (en) * 2001-08-03 2011-01-11 Semiconductor Energy Laboratory Co., Ltd. Laser irradiating device, laser irradiating method and manufacturing method of semiconductor device
US7372630B2 (en) * 2001-08-17 2008-05-13 Semiconductor Energy Laboratory Co., Ltd. Laser, irradiation apparatus, laser irradiation method, and method for manufacturing semiconductor device
CN2546122Y (zh) * 2001-11-20 2003-04-23 青岛迪玛特五金工具有限公司 孔加工机械的激光定位系统
US8004664B2 (en) 2002-04-18 2011-08-23 Chang Type Industrial Company Power tool control system
US20030233921A1 (en) 2002-06-19 2003-12-25 Garcia Jaime E. Cutter with optical alignment system
US6937336B2 (en) * 2002-08-15 2005-08-30 Black & Decker, Inc. Optical alignment system for power tool
CN100444333C (zh) * 2002-10-07 2008-12-17 株式会社半导体能源研究所 照射激光的方法、激光照射系统和半导体器件的制造方法
JP4429586B2 (ja) * 2002-11-08 2010-03-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7160762B2 (en) * 2002-11-08 2007-01-09 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device, semiconductor device, and laser irradiation apparatus
US7919726B2 (en) * 2002-11-29 2011-04-05 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus, laser irradiation method, and method for manufacturing a semiconductor device
US7056810B2 (en) * 2002-12-18 2006-06-06 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor apparatus, and semiconductor apparatus and electric appliance
JP4515034B2 (ja) * 2003-02-28 2010-07-28 株式会社半導体エネルギー研究所 半導体装置の作製方法
DE602004020538D1 (de) * 2003-02-28 2009-05-28 Semiconductor Energy Lab Verfahren und Vorrichtung zur Laserbestrahlung, sowie Verfahren zur Herstellung von Halbleiter.
US7524712B2 (en) * 2003-03-07 2009-04-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device and laser irradiation method and laser irradiation apparatus
US7304005B2 (en) * 2003-03-17 2007-12-04 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus, laser irradiation method, and method for manufacturing a semiconductor device
JP4373115B2 (ja) * 2003-04-04 2009-11-25 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7210820B2 (en) * 2003-05-07 2007-05-01 Resonetics, Inc. Methods and apparatuses for homogenizing light
US7208395B2 (en) * 2003-06-26 2007-04-24 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus, laser irradiation method, and method for manufacturing semiconductor device
US7336907B2 (en) * 2003-10-31 2008-02-26 Texas Instruments Incorporated Optical assembly having cylindrical lenses and related method of modulating optical signals
CN1886872A (zh) 2003-11-26 2006-12-27 Tcz股份有限公司 激光薄膜多晶硅退火系统
JP4342429B2 (ja) * 2004-02-09 2009-10-14 株式会社東芝 半導体装置の製造方法
JP4579575B2 (ja) * 2004-05-14 2010-11-10 株式会社半導体エネルギー研究所 レーザ照射方法及びレーザ照射装置
JP5132119B2 (ja) * 2005-10-26 2013-01-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
WO2007049525A1 (en) 2005-10-26 2007-05-03 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus and manufacturing method of semiconductor device
US7679029B2 (en) 2005-10-28 2010-03-16 Cymer, Inc. Systems and methods to shape laser light as a line beam for interaction with a substrate having surface variations
US20070117287A1 (en) * 2005-11-23 2007-05-24 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus
CN101346800B (zh) * 2005-12-20 2011-09-14 株式会社半导体能源研究所 用于制造半导体装置的激光辐射设备和方法
US7307237B2 (en) * 2005-12-29 2007-12-11 Honeywell International, Inc. Hand-held laser welding wand nozzle assembly including laser and feeder extension tips
JP2008124149A (ja) 2006-11-09 2008-05-29 Advanced Lcd Technologies Development Center Co Ltd 光学装置および結晶化装置
DE102007036262A1 (de) * 2007-08-02 2009-02-05 Robert Bosch Gmbh Radarsensor für Kraftfahrzeuge
JP2009283807A (ja) * 2008-05-26 2009-12-03 Canon Inc 窒化物半導体層を含む構造体、窒化物半導体層を含む複合基板、及びこれらの製造方法
JP5414467B2 (ja) * 2009-11-09 2014-02-12 キヤノン株式会社 レーザ加工方法
US9069255B2 (en) * 2009-11-18 2015-06-30 Jim Hennessy Carrier sheet for a photosensitive printing element
JP5302937B2 (ja) * 2010-07-20 2013-10-02 株式会社イー・エム・ディー 不純物活性化方法、半導体装置の製造方法
CN102169816B (zh) * 2011-03-09 2013-02-27 清华大学 一种超浅结深紫外激光退火设备中的屏蔽电极装置
GB2490143B (en) * 2011-04-20 2013-03-13 Rolls Royce Plc Method of manufacturing a component
DE102011002236A1 (de) * 2011-04-21 2012-10-25 Dritte Patentportfolio Beteiligungsgesellschaft Mbh & Co.Kg Verfahren zur Herstellung einer polykristallinen Schicht
US9769902B1 (en) 2011-05-09 2017-09-19 The United States Of America As Represented By Secretary Of The Air Force Laser sensor stimulator
US9859348B2 (en) 2011-10-14 2018-01-02 Diftek Lasers, Inc. Electronic device and method of making thereof
RU2486282C1 (ru) * 2011-11-17 2013-06-27 Федеральное государственное автономное образовательное учреждение высшего профессионального образования "Уральский федеральный университет имени первого Президента России Б.Н. Ельцина" Способ получения имплантированного ионами олова кварцевого стекла
JP5920661B2 (ja) * 2012-06-05 2016-05-18 三菱マテリアル株式会社 レーザ加工装置およびレーザ加工方法
JP5920662B2 (ja) * 2012-06-05 2016-05-18 三菱マテリアル株式会社 レーザ加工装置およびレーザ加工方法
US9656346B2 (en) 2012-07-04 2017-05-23 Saint-Gobain Glass France Device and method for laser processing of large-area substrates using at least two bridges
EP2953158A3 (en) 2014-06-04 2016-02-17 Diftek Lasers, Inc. Method of fabricating crystalline island on substrate
US20170365476A1 (en) * 2014-11-12 2017-12-21 President And Fellows Of Harvard College Creation of hyperdoped semiconductors with concurrent high crystallinity and high sub-bandgap absorptance using nanosecond laser annealing

Family Cites Families (119)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5313976B1 (zh) * 1969-08-04 1978-05-13
US4151008A (en) * 1974-11-15 1979-04-24 Spire Corporation Method involving pulsed light processing of semiconductor devices
US4059461A (en) * 1975-12-10 1977-11-22 Massachusetts Institute Of Technology Method for improving the crystallinity of semiconductor films by laser beam scanning and the products thereof
JPS6337321B2 (zh) 1977-05-01 1988-07-25 Canon Kk
US4155779A (en) * 1978-08-21 1979-05-22 Bell Telephone Laboratories, Incorporated Control techniques for annealing semiconductors
JPS5842448B2 (zh) * 1978-08-25 1983-09-20 Suwa Seikosha Kk
US4309224A (en) * 1978-10-06 1982-01-05 Tokyo Shibaura Denki Kabushiki Kaisha Method for manufacturing a semiconductor device
US4305640A (en) * 1978-11-24 1981-12-15 National Research Development Corporation Laser beam annealing diffuser
US4198246A (en) * 1978-11-27 1980-04-15 Rca Corporation Pulsed laser irradiation for reducing resistivity of a doped polycrystalline silicon film
US4309225A (en) * 1979-09-13 1982-01-05 Massachusetts Institute Of Technology Method of crystallizing amorphous material with a moving energy beam
US4546009A (en) * 1979-10-01 1985-10-08 Exxon Research Engineering Co High-mobility amorphous silicon displaying non-dispersive transport properties
JPS5723416B2 (zh) * 1979-11-12 1982-05-18
NL8006339A (nl) * 1979-11-21 1981-06-16 Hitachi Ltd Halfgeleiderinrichting en werkwijze voor de vervaar- diging daarvan.
US4370175A (en) 1979-12-03 1983-01-25 Bernard B. Katz Method of annealing implanted semiconductors by lasers
JPS5783745A (en) 1980-11-08 1982-05-25 Chuo Spring Co Ltd Formation of shock-proof end piece for control cable
EP0058548B1 (en) 1981-02-16 1986-08-06 Fujitsu Limited Method of producing mosfet type semiconductor device
US4379727A (en) 1981-07-08 1983-04-12 International Business Machines Corporation Method of laser annealing of subsurface ion implanted regions
US4431459A (en) * 1981-07-17 1984-02-14 National Semiconductor Corporation Fabrication of MOSFETs by laser annealing through anti-reflective coating
JPS6259896B2 (zh) 1981-08-05 1987-12-14 Fujitsu Ltd
JPS5880852A (en) 1981-11-10 1983-05-16 Toshiba Corp Manufacture of semiconductor device
US4475027A (en) * 1981-11-17 1984-10-02 Allied Corporation Optical beam homogenizer
US4484334A (en) * 1981-11-17 1984-11-20 Allied Corporation Optical beam concentrator
JPS58127318A (en) * 1982-01-25 1983-07-29 Nippon Telegr & Teleph Corp <Ntt> Forming method for single-crystal film on insulating layer
US4436557A (en) * 1982-02-19 1984-03-13 The United States Of America As Represented By The United States Department Of Energy Modified laser-annealing process for improving the quality of electrical P-N junctions and devices
JPH0378607B2 (zh) * 1982-02-26 1991-12-16 Nippon Kogaku Kk
JPS58191420A (en) * 1982-05-04 1983-11-08 Nec Corp Forming mehtod for single crystal silicon film
US4473433A (en) * 1982-06-18 1984-09-25 At&T Bell Laboratories Process for producing dielectrically isolated single crystal silicon devices
JPS5945089A (en) * 1982-09-09 1984-03-13 Toshiba Corp Build-up welding method
US4536231A (en) * 1982-10-19 1985-08-20 Harris Corporation Polysilicon thin films of improved electrical uniformity
US4592799A (en) * 1983-05-09 1986-06-03 Sony Corporation Method of recrystallizing a polycrystalline, amorphous or small grain material
JPH0142618B2 (zh) 1983-06-24 1989-09-13 Kogyo Gijutsuin
JPH0572112B2 (zh) 1983-07-04 1993-10-08 Handotai Energy Kenkyusho
US4662708A (en) * 1983-10-24 1987-05-05 Armco Inc. Optical scanning system for laser treatment of electrical steel and the like
JPS60224282A (en) * 1984-04-20 1985-11-08 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device
JPH0693515B2 (ja) * 1984-04-26 1994-11-16 株式会社半導体エネルギー研究所 半導体装置作製方法
GB8412275D0 (en) 1984-05-14 1984-06-20 Philips Electronic Associated Manufacturing semiconductor devices
JPH07118443B2 (ja) * 1984-05-18 1995-12-18 ソニー株式会社 半導体装置の製法
JPS60257511A (en) * 1984-06-04 1985-12-19 Sony Corp Heat treatment and apparatus therefor
JPS6180815A (en) * 1984-09-27 1986-04-24 Sony Corp Linear energy beam irradiation equipment
US4937459A (en) 1984-11-16 1990-06-26 Canon Kabushiki Kaisha Alignment signal detecting device
JPS61141174A (en) * 1984-12-13 1986-06-28 Seiko Epson Corp Solid state image pickup device
JPS61152069A (en) 1984-12-26 1986-07-10 Hitachi Ltd Manufacture of semiconductor device
US4769750A (en) * 1985-10-18 1988-09-06 Nippon Kogaku K. K. Illumination optical system
US4733944A (en) * 1986-01-24 1988-03-29 Xmr, Inc. Optical beam integration system
DE3784537D1 (de) * 1986-04-11 1993-04-15 Canon Kk Herstellungsverfahren einer niedergeschlagenen schicht.
JPS636501A (en) 1986-06-27 1988-01-12 Komatsu Ltd Integrator prism
JPS6325933A (en) * 1986-07-17 1988-02-03 Nec Corp Straining method for silicon substrate
JPH058864B2 (zh) * 1986-08-12 1993-02-03 Fujitsu Ltd
US6149988A (en) 1986-09-26 2000-11-21 Semiconductor Energy Laboratory Co., Ltd. Method and system of laser processing
JPH0563274B2 (zh) 1986-09-26 1993-09-10 Handotai Energy Kenkyusho
US5708252A (en) * 1986-09-26 1998-01-13 Semiconductor Energy Laboratory Co., Ltd. Excimer laser scanning system
JPH0355921Y2 (zh) * 1986-11-11 1991-12-13
JPH0786647B2 (ja) * 1986-12-24 1995-09-20 株式会社ニコン 照明装置
US4943733A (en) * 1987-05-15 1990-07-24 Nikon Corporation Projection optical apparatus capable of measurement and compensation of distortion affecting reticle/wafer alignment
JP2773117B2 (ja) 1987-06-19 1998-07-09 株式会社ニコン 露光装置及び露光方法
US4773944A (en) * 1987-09-08 1988-09-27 Energy Conversion Devices, Inc. Large area, low voltage, high current photovoltaic modules and method of fabricating same
JPS6476715A (en) * 1987-09-17 1989-03-22 Nec Corp Manufacture of polycrystalline semiconductor thin film
JPS6487814A (en) 1987-09-29 1989-03-31 Matsushita Electric Ind Co Ltd Exhaust gas filter
JP2540744B2 (ja) 1987-10-08 1996-10-09 株式会社ニコン レ―ザを用いた露光用照明装置
JPH01119020A (en) 1987-10-30 1989-05-11 Canon Inc Aligner
JPH0676312B2 (ja) * 1988-01-19 1994-09-28 株式会社サンギ 洗顔,洗髪及び入浴剤
JP2623276B2 (ja) 1988-01-22 1997-06-25 株式会社日立製作所 薄膜半導体装置の製造方法
JPH0831645B2 (ja) 1988-03-16 1996-03-27 株式会社ニコン 照明装置
US5307207A (en) * 1988-03-16 1994-04-26 Nikon Corporation Illuminating optical apparatus
JPH01239837A (en) * 1988-03-19 1989-09-25 Nippon Denso Co Ltd Recrystallization
JPH01241862A (en) * 1988-03-24 1989-09-26 Sony Corp Manufacture of display device
JPH01245993A (en) * 1988-03-27 1989-10-02 Semiconductor Energy Lab Co Ltd Thin film working device
NL8800953A (nl) * 1988-04-13 1989-11-01 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderlichaam.
JP2664723B2 (ja) 1988-05-11 1997-10-22 富士通株式会社 レーザアニール装置
JPH01286478A (en) 1988-05-13 1989-11-17 Hitachi Ltd Beam uniformizing optical system and manufacture thereof
JP2653099B2 (ja) 1988-05-17 1997-09-10 セイコーエプソン株式会社 アクティブマトリクスパネル,投写型表示装置及びビューファインダー
JPH0220681A (en) * 1988-07-05 1990-01-24 Fujitsu Ltd Focusing method for laser beam
JPH0251224A (en) 1988-08-15 1990-02-21 Tokyo Electron Ltd Method for implanting impurity
JP2632558B2 (ja) * 1988-09-08 1997-07-23 株式会社日立製作所 レーザビーム照射装置および照射方法
US5180690A (en) * 1988-12-14 1993-01-19 Energy Conversion Devices, Inc. Method of forming a layer of doped crystalline semiconductor alloy material
JP2679319B2 (ja) * 1988-12-22 1997-11-19 株式会社ニコン 照明装置及びそれを備えた露光装置並びに露光方法
US5253110A (en) * 1988-12-22 1993-10-12 Nikon Corporation Illumination optical arrangement
JPH02187294A (en) * 1989-01-13 1990-07-23 Nec Corp Laser beam shaping apparatus
JP2535610B2 (ja) * 1989-02-22 1996-09-18 株式会社半導体エネルギー研究所 薄膜トランジスタの作製方法
JPH02255292A (en) * 1989-03-28 1990-10-16 Fuji Electric Co Ltd Laser processing device
US5225924A (en) * 1989-04-07 1993-07-06 Dainippon Screen Mfg. Co., Ltd. Optical beam scanning system
JP3190653B2 (ja) * 1989-05-09 2001-07-23 ソニー株式会社 アニール方法およびアニール装置
US5272361A (en) * 1989-06-30 1993-12-21 Semiconductor Energy Laboratory Co., Ltd. Field effect semiconductor device with immunity to hot carrier effects
US5089802A (en) * 1989-08-28 1992-02-18 Semiconductor Energy Laboratory Co., Ltd. Diamond thermistor and manufacturing method for the same
JPH03132012A (en) * 1989-10-18 1991-06-05 Nikon Corp Semiconductor aligner
JPH03159119A (en) * 1989-11-17 1991-07-09 Hitachi Ltd Manufacture of semiconductor device
US4997250A (en) * 1989-11-17 1991-03-05 General Electric Company Fiber output coupler with beam shaping optics for laser materials processing system
US5232674A (en) * 1989-12-20 1993-08-03 Fujitsu Limited Method of improving surface morphology of laser irradiated surface
JP3033120B2 (ja) * 1990-04-02 2000-04-17 セイコーエプソン株式会社 半導体薄膜の製造方法
JPH0411226A (en) 1990-04-27 1992-01-16 Seiko Epson Corp Manufacture of display device
JP2657957B2 (ja) * 1990-04-27 1997-09-30 キヤノン株式会社 投影装置及び光照射方法
US5095386A (en) * 1990-05-01 1992-03-10 Charles Lescrenier Optical system for generating lines of light using crossed cylindrical lenses
EP0456199B1 (en) * 1990-05-11 1997-08-27 Asahi Glass Company Ltd. Process for preparing a polycrystalline semiconductor thin film transistor
JP2700277B2 (ja) * 1990-06-01 1998-01-19 株式会社半導体エネルギー研究所 薄膜トランジスタの作製方法
JP3248109B2 (ja) 1990-11-02 2002-01-21 ソニー株式会社 ステップアンドリピート式のレーザ結晶化方法及びレーザ光照射方法
US5236865A (en) * 1991-01-16 1993-08-17 Micron Technology, Inc. Method for simultaneously forming silicide and effecting dopant activation on a semiconductor wafer
JP3149450B2 (ja) * 1991-04-04 2001-03-26 セイコーエプソン株式会社 薄膜トランジスタの製造方法及び製造装置
US5097291A (en) * 1991-04-22 1992-03-17 Nikon Corporation Energy amount control device
JP3277548B2 (ja) * 1991-05-08 2002-04-22 セイコーエプソン株式会社 ディスプレイ基板
JP3213338B2 (ja) * 1991-05-15 2001-10-02 リコー応用電子研究所株式会社 薄膜半導体装置の製法
JP3466633B2 (ja) * 1991-06-12 2003-11-17 ソニー株式会社 多結晶半導体層のアニール方法
GB9114018D0 (en) * 1991-06-28 1991-08-14 Philips Electronic Associated Thin-film transistor manufacture
JPH0521339A (ja) * 1991-07-10 1993-01-29 Ricoh Co Ltd 薄膜半導体装置とその製法
US5432122A (en) * 1992-11-03 1995-07-11 Gold Star Co., Ltd. Method of making a thin film transistor by overlapping annealing using lasers
KR950003235B1 (ko) * 1991-12-30 1995-04-06 이헌조 반도체 소자의 구조
KR960008499B1 (ko) * 1992-03-26 1996-06-26 순페이 야마자끼 레이저 처리방법 및 레이저 처리장치
US5372836A (en) * 1992-03-27 1994-12-13 Tokyo Electron Limited Method of forming polycrystalling silicon film in process of manufacturing LCD
JP3211377B2 (ja) * 1992-06-17 2001-09-25 ソニー株式会社 半導体装置の製造方法
JPH06124913A (ja) 1992-06-26 1994-05-06 Semiconductor Energy Lab Co Ltd レーザー処理方法
US5403762A (en) * 1993-06-30 1995-04-04 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a TFT
US5413958A (en) * 1992-11-16 1995-05-09 Tokyo Electron Limited Method for manufacturing a liquid crystal display substrate
JPH06232069A (ja) 1993-02-04 1994-08-19 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
US5366926A (en) * 1993-06-07 1994-11-22 Xerox Corporation Low temperature process for laser dehydrogenation and crystallization of amorphous silicon
US6300176B1 (en) 1994-07-22 2001-10-09 Semiconductor Energy Laboratory Co., Ltd. Laser processing method
JP3917231B2 (ja) 1996-02-06 2007-05-23 株式会社半導体エネルギー研究所 レーザー照射装置およびレーザー照射方法
US5699191A (en) 1996-10-24 1997-12-16 Xerox Corporation Narrow-pitch beam homogenizer
JP3813269B2 (ja) 1996-11-01 2006-08-23 株式会社半導体エネルギー研究所 レーザー照射システム
US5986807A (en) 1997-01-13 1999-11-16 Xerox Corporation Single binary optical element beam homogenizer
JPH10253916A (ja) 1997-03-10 1998-09-25 Semiconductor Energy Lab Co Ltd レーザー光学装置

Also Published As

Publication number Publication date Type
US7985635B2 (en) 2011-07-26 grant
CN1284742A (zh) 2001-02-21 application
JP2000357667A (ja) 2000-12-26 application
CN1108225C (zh) 2003-05-14 grant
US6440785B1 (en) 2002-08-27 grant
JP4602365B2 (ja) 2010-12-22 grant
CN1921069A (zh) 2007-02-28 application
KR100203981B1 (ko) 1999-06-15 grant
US20060194377A1 (en) 2006-08-31 application
CN1076864C (zh) 2001-12-26 grant
US6991975B1 (en) 2006-01-31 grant
US5968383A (en) 1999-10-19 grant
KR0169872B1 (ko) 1999-10-01 grant
CN1921069B (zh) 2010-12-08 grant
US5858473A (en) 1999-01-12 grant
KR0169945B1 (en) 1999-02-18 grant
CN1414604A (zh) 2003-04-30 application
JP2001044131A (ja) 2001-02-16 application
JP2001060562A (ja) 2001-03-06 application
JP2011223027A (ja) 2011-11-04 application
JP2010045411A (ja) 2010-02-25 application
US6002101A (en) 1999-12-14 grant
JPH06124913A (ja) 1994-05-06 application
KR100261853B1 (ko) 2000-08-01 grant
CN1139105C (zh) 2004-02-18 grant
US5897799A (en) 1999-04-27 grant
CN1087750A (zh) 1994-06-08 application
CN1216404C (zh) 2005-08-24 grant
JP2007158376A (ja) 2007-06-21 application
CN1128193A (zh) 1996-08-07 application
CN1214450C (zh) 2005-08-10 grant
KR970005141B1 (ko) 1997-04-12 grant
JP2004186704A (ja) 2004-07-02 application
JP3708793B2 (ja) 2005-10-19 grant
JP4832566B2 (ja) 2011-12-07 grant
JP2001015449A (ja) 2001-01-19 application
CN1350322A (zh) 2002-05-22 application
JP2001023921A (ja) 2001-01-26 application
KR100261852B1 (ko) 2000-07-15 grant

Similar Documents

Publication Publication Date Title
US6391690B2 (en) Thin film semiconductor device and method for producing the same
US6212012B1 (en) Laser optical apparatus
US6322625B2 (en) Crystallization processing of semiconductor film regions on a substrate, and devices made therewith
US6567219B1 (en) Laser irradiation apparatus
US6509212B1 (en) Method for laser-processing semiconductor device
US6723590B1 (en) Method for laser-processing semiconductor device
US6849825B2 (en) Laser irradiation apparatus
US6037017A (en) Method for formation of multilayer film
US6902616B1 (en) Method and apparatus for producing semiconductor device
US5907770A (en) Method for producing semiconductor device
US6881615B2 (en) Method for crystallizing semiconductor material without exposing it to air
US6143661A (en) Method of processing semiconductor device with laser
US6437313B2 (en) Method for forming a semiconductor device having a semiconductor film with a height difference
US6020224A (en) Method for making thin film transistor
US6165876A (en) Method of doping crystalline silicon film
EP1049144A1 (en) Semiconductor thin film, method of producing the same, apparatus for producing the same, semiconductor device and method of producing the same
US5891764A (en) Laser processing apparatus and laser processing process
US6440824B1 (en) Method of crystallizing a semiconductor thin film, and method of manufacturing a thin-film semiconductor device
US5561081A (en) Method of forming a semiconductor device by activating regions with a laser light
US6373870B1 (en) Laser irradiation apparatus and laser irradiation method
US5183780A (en) Method of fabricating semiconductor device
US5366926A (en) Low temperature process for laser dehydrogenation and crystallization of amorphous silicon
US5965904A (en) Semiconductor device comprising silicon semiconductor layer
US20040058553A1 (en) Beam homogenizer and laser irradiation apparatus and method of manufacturing semiconductor device
EP0456199A2 (en) Process for preparing a polycrystalline semiconductor thin film transistor

Legal Events

Date Code Title Description
C06 Publication
C10 Request of examination as to substance
C14 Granted
C17 Cessation of patent right