CN1352468A - Micro temperature difference battery made of one-dimensional nanometer linear array structure thermo-electric material - Google Patents
Micro temperature difference battery made of one-dimensional nanometer linear array structure thermo-electric material Download PDFInfo
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- CN1352468A CN1352468A CN 01140414 CN01140414A CN1352468A CN 1352468 A CN1352468 A CN 1352468A CN 01140414 CN01140414 CN 01140414 CN 01140414 A CN01140414 A CN 01140414A CN 1352468 A CN1352468 A CN 1352468A
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Abstract
The invention discloses a micro-thermoelectric cell made of thermal differential material with structure of one dimension linear array. The shape of the cell is like a platelet whose thickness is 20micron-3milimeter. The body of micro thermoelectric cell is composed of two boards: upper and lower boards with laminar structure in serial; C, B, A, B, C layers The upper boards is composed of C and B layers. The lower layer is composed of C, B, and A layer. Layer A with thickness 5-50 micron is made of a thermal differential material containing a lot of P type of node and N type of node with structure of one dimension linear array. Layer B is a conducting material layer. Layer C is an encapsulation layer made of heat conducting insulated material. The invented micro-thermoelectric cell has advantages of compactness, thin thickness. It is especially suitable for being used in micro-module of high technological system.
Description
Technical field
The present invention relates to a kind of tepor difference battery by the body plan of one-dimensional nano line array structure thermoelectric material.Belong to the thermoelectric cell technical field.
Background technology
Thermoelectric cell belongs to physical battery, and it is a kind of device that thermal power transfer is become electric energy.According to Seebeck effect, if two kinds of different metals is connected and forms the loop, when the temperature of two joints not simultaneously, the contact potential difference owing to two joints will produce an electromotive force in the circuit, Here it is Sai Beike electromotive force.For semiconductor, if N type and P type semiconductor thermoelectric material are linked to be the π type.When the two ends temperature not simultaneously, hole in the P type semiconductor and the electronics in the N type semiconductor then can be respectively to the low-temperature end accumulation, the load two ends will produce thermoelectromotive force, utilize this principle to can be made into thermoelectric cell.
The thermoelectric cell made from traditional block thermoelectric material bulky, thermoelectric transfer ratio is low, and its range of application is very limited.
Summary of the invention
The object of the present invention is to provide a kind of tepor difference battery with the body plan of one-dimensional nano line array structure thermoelectric material.The size of this tepor difference battery is little, and the conversion efficiency of thermoelectric height is specially adapted to be the various micro device system power supply in high, the new technical field, even can realize power supply on corresponding devices with this tepor difference battery is integrated.
For achieving the above object, the present invention is realized by following technical proposals.Tepor difference battery profile is the thin slice body, and its thickness can be controlled at the scope of 20 μ m~3mm as required.Tepor difference battery main body is made of upper and lower two boards, has layer structure, and general structure is C layer → B layer → A layer → B layer → C layer in proper order.Upper plate is made up of C layer and two material layer of B layer, and lower plate is made up of C layer, B layer and three material layer of A layer successively.It is characterized in that the A layer is an one-dimensional nano line array structure thermoelectric material layer, be made up of a large amount of P type joints and N type joint thermoelectric material that the A layer thickness is in the scope of 5 μ m~500 μ m, the B layer is a conductive material layer, and the C layer is encapsulation heat-conducting insulation material layer.
The one-dimensional nano line thermoelectric material density of above-mentioned A layer is 10
4~10
12Individual/cm
2A large amount of P type joints and N type joint thermoelectric material in the A layer are regularly arranged, and the geometry of joint can be circle, rectangle or polygon, phase
Spacing between the adjacent joint is the scope of 0.01 μ m to 2000 μ m.
Below the present invention is described in detail.
One-dimensional nano line array structure thermoelectric material layer (A layer) is a most important component of the present invention, P type joint and N type joint one-dimensional nano line array structure thermoelectric materials a large amount of on it are arranged with certain regular geometry, size and the internode of joint is apart from differently being determined that general internode distance is controlled between 0.01 μ m to the 2000 μ m according to what battery performance was required.Each P type joint in the A layer all includes a large amount of P type one-dimensional nano line thermoelectric materials.Equally, each the N type joint in the A layer also all includes a large amount of N type one-dimensional nano line thermoelectric materials.The range of choice broad of P type and N type one-dimensional nano line thermoelectric material, part is shown in table 1.
Table 1 P type and N type nano wire thermoelectric material are formed
Form | Type | Form | Type |
BiTe 0.8Se 0.2 | The N type | Bi 0.4Sb 0.6Te 0.8Se 0.2 | The P type |
BiTe 0.6Se 0.4 | The N type | Bi 2Te 1 | The P type |
BiTe 0.4Se 0.6 | The N type | Bi 1.2Sb 0.8Te 1 | The P type |
BiTe 0.2Se 0.8 | The N type | Sb 2Te 1 | The P type |
Bi 1Se 1 | The N type | Bi 2Te 0.8Se 0.2 | The P type |
Bi 0.8Sb 0.2Te 0.8Se 0.2 | The N type | Bi 2Te 0.4Se 0.6 | The P type |
Bi 0.8Sb 0.2Te 0.8Se 0.4 | The N type | Bi 2Se 1 | The P type |
Bi 0.8Sb 0.2Te 0.8Se 0.5 | The N type | Bi 1.4Sb 0.6Te 0.8Se 0.2 | The P type |
Bi 0.8Sb 0.2Te 0.8Se 0.8 | The N type | Bi 3.2Sb 0.8Te 5 | The P type |
Bi 0.8Sb 0.2Se | The N type | Bi 2Sb 2Te 5 | The P type |
Bi 0.6Sb 0.4Te 0.8Se 0.2 | The N type | Bi 2Sb 2Te 3Se 2 | The P type |
Bi 0.6Sb 0.4Te 0.6Se 0.4 | The N type | Bi 3.2Sb 0.8Te 4Se 1 | The P type |
Bi 0.6Sb 0.4Te 0.4Se 0.6 | The N type | Sb 4Te 5 | The P type |
Bi 0.6Sb 0.4Te 0.2Se 0.8 | The N type | Pb 0.75Sn 0.25Te | The P type |
Bi 0.6Sb 0.4Se | The N type | ||
Bi 4Te 5 | The N type | ||
Bi 4Se 5 | The N type | ||
Bi 4Te 3Se 2 | The N type | ||
PbTe+0.5wt%PbI 2 | The N type | ||
Bi | The N type |
Conductive material layer (B layer) is in order to the P type joint of realization A layer and the series connection between the N type joint, to constitute the conduction networking of tepor difference battery.This layer can be selected as metal and alloys thereof such as gold, silver, nickel, titanium, copper, aluminium, zinc, palladium, platinum.The effect of encapsulation heat conductive insulating layer (C layer) has two aspects: the one, as the outer enclosure layer of battery, the 2nd, utilize its good heat-conducting, two C layer outer plate surface at the tepor difference battery are kept the needed temperature difference, to guarantee the tepor difference battery enough voltage output are arranged.This layer adopts quality hard, making such as the good and nonconducting again diamond of heat conductivility, silicon chip.Thickness can be controlled at the scope of 5 μ m to 2mm as required, and area is larger than inner layer metal conductive layer (B layer).
The advantage of tepor difference battery of the present invention is expeditiously heat energy to be changed into electric energy output, and volume is little, and thin thickness is specially adapted in the micro device system in the high, precision and frontier technical field.
Description of drawings
Fig. 1 is the schematic perspective view (alligatoring enlarged drawing) after tepor difference battery of the present invention removes upper plate C layer;
Fig. 2 is a tepor difference battery lower plate schematic perspective view (alligatoring enlarged drawing);
Fig. 3 is a tepor difference battery upper plate schematic perspective view (alligatoring enlarged drawing);
Fig. 4 is the SEM photo figure of one-dimensional nano line thermoelectric material.
Among the figure:
1 is one-dimensional nano line thermoelectric material layer, i.e. A layer; 2 is conductive material layer, i.e. the B layer; 3 are encapsulation heat-conducting insulation material layer, i.e. C layer; 4 are P type joint one-dimensional nano line thermoelectric material; 5 are N type joint one-dimensional nano line thermoelectric material; 6 is the one-dimensional nano line thermoelectric material; 7 is the insulating body material.
Embodiment
On the thick silicon chip C layer of 100 μ m, form the B layer with PVD method plated metal nickel.On the B layer, deposit the metal aluminium lamination subsequently.After aluminium lamination being carried out a series of microelectronics manufacturing procedures such as gluing, preceding baking, the long-pending exposure of aluminium lamination P type nodal section, the long-pending development of P type nodal section, back baking, adopt electrochemical techniques to prepare one dimension P type nano wire tepor difference material at the long-pending place of P type nodal section.Again to the long-pending place of aluminium lamination N type nodal section through similar technical process, long-pendingly develop, the back baking, adopt electrochemical techniques to prepare one dimension N type nano wire tepor difference material as exposure, N type nodal section at the long-pending place of N type nodal section.After the metal aluminium lamination is prepared one-dimensional nano line P type joint and N type joint, adopt microelectronics processing lithographic technique through above-mentioned technology again, etch the internode distance between P type joint and the N type joint, prepare the A layer.Simultaneously, adopt microelectronics processing lithographic technique, etch the conduction networking of realizing series connection between a large amount of P type joint of A layer and the N type joint, make lower plate at nickel dam.Upper plate also adopts the thick silicon chip of 100 μ m to make the C layer, forms the B layer with PVC method plated metal nickel.Adopt microelectronics processing lithographic technique that B layer metallic nickel carried out etching, etch the conduction networking of realizing a large amount of P type joint of A layer and the series connection of N type joint, make upper plate at the B layer.At last, upper plate and lower plate are prepared the tepor difference battery through operations such as butt joint, encapsulation.
Claims (2)
1, a kind of tepor difference battery by the body plan of one-dimensional nano line array structure thermoelectric material, this tepor difference battery profile is the thin slice body, its thickness can be controlled at 20 μ m~3mm scope as required.Tepor difference battery main body is made of upper and lower two boards, has layer structure, and general structure is C layer → B layer → A layer → B layer → C layer in proper order.Upper plate is made up of C layer and two material layer of B layer, lower plate is made up of C layer, B layer and three material layer of A layer successively, it is characterized in that: the A layer is an one-dimensional nano line array structure thermoelectric material layer, form by a large amount of P type joints and N type joint thermoelectric material, the A layer thickness is at 5 μ m~500 mu m ranges, the B layer is a conductive material layer, and the C layer is encapsulation heat-conducting insulation material layer.
2, by the described tepor difference battery by the body plan of one-dimensional nano line array structure thermoelectric material of claim 1, it is characterized in that: the one-dimensional nano line thermoelectric material density of A layer is 10
4~10
12Individual/cm
2, a large amount of P type joints and N type joint thermoelectric material in the A layer are regularly arranged, and the geometry of joint is circle, rectangle or polygon, and the spacing between the adjacent segments is 0.01 μ m to 2000 mu m range.
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CN1167141C CN1167141C (en) | 2004-09-15 |
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Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100349307C (en) * | 2003-08-15 | 2007-11-14 | 天津大学 | Miniature thermobattery and manufacturing method thereof |
CN100370636C (en) * | 2004-10-25 | 2008-02-20 | 天津大学 | Mfg method microfilm thermoelectric cell |
CN103460417A (en) * | 2010-11-19 | 2013-12-18 | 阿尔法贝特能源公司 | Arrays of long nanostructures in semiconductor materials and method thereof |
CN104576913A (en) * | 2014-12-29 | 2015-04-29 | 华中科技大学 | Semiconductor temperature difference power generation sheet |
US9219215B1 (en) | 2007-08-21 | 2015-12-22 | The Regents Of The University Of California | Nanostructures having high performance thermoelectric properties |
US9242855B2 (en) | 2012-03-07 | 2016-01-26 | Alphabet Energy, Inc. | Bulk nano-ribbon and/or nano-porous structures for thermoelectric devices and methods for making the same |
US9257627B2 (en) | 2012-07-23 | 2016-02-09 | Alphabet Energy, Inc. | Method and structure for thermoelectric unicouple assembly |
US9514931B2 (en) | 2010-12-03 | 2016-12-06 | Alphabet Energy, Inc. | Low thermal conductivity matrices with embedded nanostructures and methods thereof |
US9691849B2 (en) | 2014-04-10 | 2017-06-27 | Alphabet Energy, Inc. | Ultra-long silicon nanostructures, and methods of forming and transferring the same |
-
2001
- 2001-12-06 CN CNB011404140A patent/CN1167141C/en not_active Expired - Fee Related
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100349307C (en) * | 2003-08-15 | 2007-11-14 | 天津大学 | Miniature thermobattery and manufacturing method thereof |
CN100370636C (en) * | 2004-10-25 | 2008-02-20 | 天津大学 | Mfg method microfilm thermoelectric cell |
US9219215B1 (en) | 2007-08-21 | 2015-12-22 | The Regents Of The University Of California | Nanostructures having high performance thermoelectric properties |
CN103460417A (en) * | 2010-11-19 | 2013-12-18 | 阿尔法贝特能源公司 | Arrays of long nanostructures in semiconductor materials and method thereof |
US9240328B2 (en) | 2010-11-19 | 2016-01-19 | Alphabet Energy, Inc. | Arrays of long nanostructures in semiconductor materials and methods thereof |
US9735022B2 (en) | 2010-11-19 | 2017-08-15 | Alphabet Energy, Inc. | Arrays of long nanostructures in semiconductor materials and methods thereof |
US9514931B2 (en) | 2010-12-03 | 2016-12-06 | Alphabet Energy, Inc. | Low thermal conductivity matrices with embedded nanostructures and methods thereof |
US9242855B2 (en) | 2012-03-07 | 2016-01-26 | Alphabet Energy, Inc. | Bulk nano-ribbon and/or nano-porous structures for thermoelectric devices and methods for making the same |
US9257627B2 (en) | 2012-07-23 | 2016-02-09 | Alphabet Energy, Inc. | Method and structure for thermoelectric unicouple assembly |
US9691849B2 (en) | 2014-04-10 | 2017-06-27 | Alphabet Energy, Inc. | Ultra-long silicon nanostructures, and methods of forming and transferring the same |
CN104576913A (en) * | 2014-12-29 | 2015-04-29 | 华中科技大学 | Semiconductor temperature difference power generation sheet |
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