CN1322591C - Method for processing and manufacturing components and parts applied in micro-electronics and mechanical system - Google Patents
Method for processing and manufacturing components and parts applied in micro-electronics and mechanical system Download PDFInfo
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- CN1322591C CN1322591C CNB031279406A CN03127940A CN1322591C CN 1322591 C CN1322591 C CN 1322591C CN B031279406 A CNB031279406 A CN B031279406A CN 03127940 A CN03127940 A CN 03127940A CN 1322591 C CN1322591 C CN 1322591C
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- photoetching
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Abstract
The present invention discloses a method for processing and manufacturing components and parts of micro-electronic mechanical systems. The purpose of the present invention is to provide a method for processing and manufacturing components and parts applied to micro-electronic mechanical systems, which can meet the processing requirements of different users and different parts. The present invention has the technical scheme that the present invention comprises at least two of the following steps: 1) preparing piezoresistive parts; 2) preparing films; 3) punching through and releasing the films. The method for manufacturing piezoresistive parts with silicon films of a micro-electronic mechanical system (MEMS), having the function of divisional use, which is provided by the present invention, lays a solid foundation for realizing the specialized development from the MEMS technical research to the work division and cooperation. Because the present invention has the characteristics of divisional use and capability of being cut, the present invention can make more people professionally enter the field of the MEMS, and needed steps can be intercepted by different users according to the users' own requirements. The present invention and the development of the standard technology can bring revolutionary changes and development for the development of the MEMS technology.
Description
Technical field
The present invention relates to a kind of manufacture method of components and parts, refer to a kind of machining manufacture that is applicable to the components and parts of microelectromechanical systems (hereinafter to be referred as MEMS) especially.
Background technology
Microelectromechanical systems (MEMS) is as originating from the interdiscipline of the nineties in last century and advanced manufacturing technology to the quality of life of improving people, the living standard that improves people, and strengthens national power irreplaceable important function is all arranged.Because strong multidisciplinary intersection feature and to the dependence of process technology, the research mode of MEMS and process technology are with regard to the inherent diversity that has.Although silicon technology has become the main flow of MEMS process technology in recent years, a kind of research mode of device one cover technology does not have to change substantially.Because the realization of MEMS device needs the integration of many-sided technology, this complexity makes the researcher be difficult to grasp all technology contents that are designed into process technology from device operation principle, device architecture comprehensively.And the specialized inadequately of the low-level and research method of present this resource-sharing makes the development of MEMS technology be subjected to very big restriction, become a bottleneck problem.How can share the achievement of scientific research, more specialized the technical problem that solves in the MEMS technical development process to greatest extent, develop a kind of MEMS device production line as automobile, television set or integrated circuit, making this industry move towards optimum market circulation is the dream of being engaged in MEMS technical research and market development personnel.
At the subject matter that exists in the MEMS technical development process, how the angle from process technology works out a kind of demand that can satisfy different user, different components processing technology, realizes that the insider is being perplexed in the production line production of MEMS device always.
Summary of the invention
In view of the foregoing, the purpose of this invention is to provide and a kind ofly can satisfy components and parts machining manufacture different user, different components process requirements, that be applicable to microelectromechanical systems (MEMS).
For achieving the above object, the present invention takes following design: a kind of manufacture method of components and parts is characterized in that: during it comprises the steps at least two:
1) pressure drag preparation;
2) film preparation;
3) the film break-through discharges;
Wherein, described step 1) may further comprise the steps:
(1) silicon chip is carried out thermal oxidation;
(2) 1 oxidized silicon chips of photoetching;
(3) photoresist there is not the SiO of masking regional
2Corrode;
(4) eroding SiO
2The zone carry out ion and inject
11B
+
(5) boron that will be injected in the silicon chip drives in;
(6) 2 oxidized silicon chips of photoetching;
(7) photoresist there is not the SiO of masking regional
2Carry out etching;
(8) window region that forms after the etching is carried out dense boron diffusion, thermal oxidation;
(9) 3 oxidized silicon chips of photoetching;
(10) photoresist there is not the SiO of masking regional
2Carry out etching;
(11) window region that forms after the etching is carried out dense phosphorous diffusion, thermal oxidation;
The silicon chip that (12) 5 times photoetching is oxidized forms fairlead;
(13) photoresist there is not the SiO of masking regional
2Corrode; Remove photoresist;
(14) at whole silicon wafer surface sputtering metallic aluminium or chromium/gold;
The silicon chip that (15) 6 times photoetching is oxidized forms front metal lead-in wire figure;
(16) there is not the metal of masking regional to corrode to photoresist; Remove photoresist;
Described step 2) may further comprise the steps:
(1) carries out lpcvd silicon nitride on the surface of silicon chip;
(2) 4 oxidized silicon chips of dual surface lithography form back of the body alveolus;
(3) RIE back side silicon nitride; RIE front silicon nitride; Remove photoresist in the back side;
(4) sheet front protecting; At the extremely surplus 30 μ m of the opening part KOH of silicon chip backside mask corrosion silicon;
Described step 3) may further comprise the steps:
(1) carries out the oxidized silicon chip of photoetching the 7th time at reach through region;
(2) ICP (inductance coupling plasma etch system) etching does not have the zone of photoresist masking to break-through; Remove photoresist.
The silicon thin film piezo-resistance device manufacture method that the sectional that is applicable to microelectromechanical systems (MEMS) that the present invention proposes uses has been established solid foundation for realizing the MEMS technical research to the professional development of sharing out the work and help one another.The invention has the advantages that the simple and practical method of utilizing MEMS processing and manufacturing components and parts of having developed.But use cutting because it has segmentation, therefore can allow the more professional MEMS field that enters of more people, different users can intercept required step according to the demand of oneself.Its positive effect is that also the proposition of this machining manufacture and the exploitation of standard technology will bring revolutionary change and progress to the development of MEMS technology, the development in MEMS technology and market will greatly be promoted, the integrated circuit industry that the MEMS technology finally can be developed as today.
Description of drawings
Fig. 1 is a components and parts cross-section structure behind 1 photoetching of the embodiment of the invention, corrosion oxidation silicon, the injection ion
Fig. 2 is a components and parts cross-section structure behind the embodiment of the invention 1 secondary photoetching, the etching oxidation silicon
Fig. 3 is a components and parts cross-section structure after the embodiment of the invention 1 dense boron diffusion, thermal oxidation, 3 photoetching
Fig. 4 is a components and parts cross-section structure behind the embodiment of the invention 1 dense phosphorous diffusion, thermal oxidation, the LPCVD silica
Fig. 5 is a components and parts cross-section structure behind the embodiment of the invention 1 KOH corrosion silicon
Fig. 6 is a components and parts cross-section structure behind 1 five photoetching of the embodiment of the invention, the etching oxidation silicon
Fig. 7 is a components and parts cross-section structure after the embodiment of the invention 1 splash-proofing sputtering metal, 6 photoetching, the corrosion of metals
Fig. 8 is etched to components and parts cross-section structure after the break-through for the embodiment of the invention 1 seven photoetching, ICP
Fig. 9 is 2 photoetching of the embodiment of the invention, corrosion oxidation silicon, ion injection back components and parts cross-section structure
Figure 10 is a components and parts cross-section structure behind the embodiment of the invention 2 secondary photoetching (P+ district), the etching oxidation silicon
Figure 11 is the embodiment of the invention 2 dense boron diffusions, thermal oxidation, 3 photoetching (N+ district) back components and parts cross-section structure
Figure 12 is a components and parts cross-section structure behind the embodiment of the invention 2 dense phosphorous diffusions, thermal oxidation, the lpcvd silicon nitride
Figure 13 is a components and parts cross-section structure behind the embodiment of the invention 2 KOH corrosion silicon
Figure 14 is a components and parts cross-section structure behind 2 five photoetching of the embodiment of the invention, the etching oxidation silicon
Figure 15 is the embodiment of the invention 2 metal deposits, 6 photoetching, corrosion of metals, and back components and parts cross-section structure removes photoresist
Figure 16 is 3 four photoetching of the embodiment of the invention, RIE nitrogenize silicon/oxidative silicon, back components and parts cross-section structure removes photoresist
Figure 17 is a components and parts cross-section structure behind the extremely surplus 30 μ m of the embodiment of the invention 3 KOH corrosion silicon
Figure 18 is the embodiment of the invention 3 metal deposits, 6 photoetching, corrosion of metals, back components and parts cross-section structure removes photoresist
Figure 19 components and parts cross-section structure that is 3 seven photoetching of the embodiment of the invention, etching oxidation silicon/silicon to the break-through
Number in the figure is described as follows:
1, silicon chip 2, silica 3, photoresist
4, light boron doped region 5, dense boron doped region 6, silicon nitride
7, dense phosphorous diffusion district 8, back of the body chamber 9, fairlead
10, metal lead wire 11, accelerometer cantilever beam 13, accelerometer mass
Embodiment
Provided by the inventionly be applicable to that silicon thin film pressure resistance type device making method microelectromechanical systems, that sectional uses mainly comprises pressure drag preparation, film preparation and film break-through and discharges three basic steps.Different users can take above-mentioned three steps of independent use apart according to the requirement of different components processing, also can be used in combination above-mentioned three steps.
For example, above-mentioned three step processing and manufacturing accelerometers of use capable of being combined and gas flowmeter; Also can be only with devices such as pressure drag preparation, two step processing and manufacturings of film preparation pressure gauges; Can also only use film preparation and film break-through to discharge devices such as two step processing and manufacturing low-power consumption chemistry gas sensor.
Specify below in conjunction with accompanying drawing.
Embodiment 1: the process that is used in combination above-mentioned three step processing and manufacturing accelerometer chip.
As Fig. 1-shown in Figure 8, it specifically may further comprise the steps:
1, thermal oxidation 3000 , the diffusion mask
2,1 photoetching forms P
-The piezoresistive regions figure
3, BHF corrosion SiO
2
4, ion inject 100Kev,
11B
+, 1.8-4.0E14cm-2, pressure drag mixes up (as shown in Figure 1); Remove photoresist
5, boron drives in 1100 ℃ of (N
2, 120`); 1000 ℃ of thermal oxidations, 3000 form the diffusion mask
6,2 photoetching (P
+The district)
7, etching SiO
2(as shown in Figure 2); Remove photoresist
8,1100 ℃ of (N of dense boron diffusion
2, 30`); Thermal oxidation 3000
9,3 photoetching form N
+District's figure
10, etching SiO
2(as shown in Figure 3); Remove photoresist
11,1000 ℃ of (N of dense phosphorous diffusion
2, 30`); Thermal oxidation 3000 form the diffusion mask
12, lpcvd silicon nitride 1200-1400
13,4 photoetching, dual surface lithography forms back of the body alveolus figure
14, RIE back side silicon nitride (as shown in Figure 4), the KOH etching mask; RIE front silicon nitride; Remove photoresist in the back side
15, KOH corrosion silicon is to surplus 30 μ m (as shown in Figure 5)
16,5 photoetching form the fairlead figure
17, etching SiO
2(as shown in Figure 6); Remove photoresist
18, sputtered aluminum, 800 nanometers
19,6 photoetching form front metal lead-in wire figure
20, phosphoric acid corrosion aluminium (as shown in Figure 7); Remove photoresist
21,7 photoetching form the reach through region figure
22, the ICP etch silicon is to break-through (as shown in Figure 8); Remove photoresist.
Embodiment 2: only with pressure drag preparation, two manometric processes of step processing and manufacturing of film preparation.
As Fig. 9-shown in Figure 15, it specifically may further comprise the steps:
1. thermal oxidation 3000
2.1 inferior photoetching (P-piezoresistive regions)
3.BHF corrosion SiO
2
Ion inject 100Kev,
11B
+, 1.8-4.0E14cm
-2(as shown in Figure 9); Remove photoresist
5. boron drives in 1100 ℃ of (N
2, 120`); 1000 ℃ of thermal oxidations, 3000
6.2 inferior photoetching (P
+The district)
7. etching SiO
2(as shown in figure 10); Remove photoresist
8. 1100 ℃ of (N of dense boron diffusion
2, 30`); Thermal oxidation 3000
9.3 inferior photoetching (N+ district)
10. etching SiO
2(shown in Fig. 1 1); Remove photoresist
11. 1000 ℃ of (N of dense phosphorous diffusion
2, 30`); Thermal oxidation 3000
12.LPCVD silicon nitride 1200-1400
13.4 inferior photoetching, dual surface lithography, back of the body alveolus
14.RIE back side silicon nitride; RIE front silicon nitride (as shown in figure 12); Remove photoresist in the back side
15.KOH corrosion silicon is to surplus 30 μ m (as shown in figure 13)
16.5 inferior photoetching, fairlead
17. etching SiO
2(as shown in figure 14); Remove photoresist
18. sputtered aluminum, 800 nanometers
19.6 inferior photoetching forms front metal lead-in wire figure
20. phosphoric acid corrosion aluminium; Remove photoresist (as shown in figure 15).
Embodiment 3: use film preparation and film break-through to discharge the process of two step processing and manufacturing low-power consumption chemistry gas sensor
As Figure 16-shown in Figure 19, it specifically may further comprise the steps:
1. thermal oxidation 3000
2.LPCVD silicon nitride 1200-1400
3.4 inferior photoetching (dual surface lithography, back of the body alveolus)
4.RIE back side silicon nitride (as shown in figure 16); RIE front silicon nitride; Remove photoresist in the back side
5.KOH corrosion silicon is to surplus 30 μ m (as shown in figure 17)
6.6 inferior photoetching
7. front depositing metal platinum (Pt) 3000 , metal-stripping (as shown in figure 18)
8.7 inferior photoetching (reach through region)
7.ICP etch silicon is to break-through; Remove photoresist (as shown in figure 19).
Claims (1)
1, a kind of manufacture method of components and parts comprises at least one in film preparation and the following step:
1) pressure drag preparation;
2) the film break-through discharges;
Wherein, described pressure drag preparation may further comprise the steps:
(1) silicon chip is carried out thermal oxidation;
(2) oxidized silicon chip is carried out the 1st photoetching;
(3) to not by the SiO in the zone of photoresist masking
2Corrode;
(4) eroding SiO
2The zone carry out ion and inject
11B
+
(5) boron that will be injected in the silicon chip drives in;
(6) oxidized silicon chip is carried out the 2nd photoetching;
(7) to not by the SiO in the zone of photoresist masking
2Carry out etching;
(8) window region that forms after the etching is carried out dense boron diffusion, thermal oxidation;
(9) oxidized silicon chip is carried out the 3rd photoetching;
(10) to not by the SiO in the zone of photoresist masking
2Carry out etching;
(11) window region that forms after the etching is carried out dense phosphorous diffusion, thermal oxidation;
(12) oxidized silicon chip is carried out the 5th photoetching, form fairlead;
(13) to not by the SiO in the zone of photoresist masking
2Corrode; Remove photoresist;
(14) at whole silicon chip surface sputtering metallic aluminium or chromium/gold;
(15) oxidized silicon chip is carried out the 6th photoetching, form front metal lead-in wire figure;
(16) to not by the SiO in the zone of photoresist masking
2Corrode; Remove photoresist;
Described film preparation may further comprise the steps:
(1) carries out lpcvd silicon nitride on the surface of silicon chip;
(2) silicon chip is carried out the 4th photoetching, form back of the body alveolus, the 4th is lithographically dual surface lithography;
(3) RIE back side silicon nitride; RIE front silicon nitride; Remove photoresist in the back side;
(4) silicon chip front protecting; At the extremely surplus 30 μ m of silicon chip back side KOH corrosion silicon;
Described film break-through discharges and may further comprise the steps:
(1) at reach through region silicon chip is carried out the 7th photoetching;
(2) the ICP etching does not have the zone of photoresist masking to break-through; Remove photoresist.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031279406A CN1322591C (en) | 2003-04-25 | 2003-04-25 | Method for processing and manufacturing components and parts applied in micro-electronics and mechanical system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031279406A CN1322591C (en) | 2003-04-25 | 2003-04-25 | Method for processing and manufacturing components and parts applied in micro-electronics and mechanical system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1540386A CN1540386A (en) | 2004-10-27 |
| CN1322591C true CN1322591C (en) | 2007-06-20 |
Family
ID=34322092
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB031279406A Expired - Fee Related CN1322591C (en) | 2003-04-25 | 2003-04-25 | Method for processing and manufacturing components and parts applied in micro-electronics and mechanical system |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1322591C (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102976263B (en) * | 2012-12-11 | 2015-04-15 | 北京大学 | Method for preparing micro-electromechanical system (MEMS) piezoresistive multi-axis sensor |
| CN104752151B (en) * | 2013-12-27 | 2018-08-17 | 中芯国际集成电路制造(上海)有限公司 | A kind of integrated passive devices and its manufacturing method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06216397A (en) * | 1993-01-14 | 1994-08-05 | Fuji Electric Co Ltd | Manufacture of acceleration sensor |
| CN1135039A (en) * | 1995-01-30 | 1996-11-06 | 株式会社日立制作所 | Semiconductor composition sensor |
| JPH10135486A (en) * | 1996-10-29 | 1998-05-22 | Matsushita Electric Works Ltd | Manufacture of semiconductor acceleration sensor |
| JPH10242480A (en) * | 1997-02-28 | 1998-09-11 | Matsushita Electric Works Ltd | Semiconductor pressure sensor |
-
2003
- 2003-04-25 CN CNB031279406A patent/CN1322591C/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06216397A (en) * | 1993-01-14 | 1994-08-05 | Fuji Electric Co Ltd | Manufacture of acceleration sensor |
| CN1135039A (en) * | 1995-01-30 | 1996-11-06 | 株式会社日立制作所 | Semiconductor composition sensor |
| JPH10135486A (en) * | 1996-10-29 | 1998-05-22 | Matsushita Electric Works Ltd | Manufacture of semiconductor acceleration sensor |
| JPH10242480A (en) * | 1997-02-28 | 1998-09-11 | Matsushita Electric Works Ltd | Semiconductor pressure sensor |
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| Publication number | Publication date |
|---|---|
| CN1540386A (en) | 2004-10-27 |
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Granted publication date: 20070620 Termination date: 20120425 |