CN1318737A - Preparation of silicon-based organic sound pressure sensor chip for micro optical machine - Google Patents
Preparation of silicon-based organic sound pressure sensor chip for micro optical machine Download PDFInfo
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- CN1318737A CN1318737A CN 01119332 CN01119332A CN1318737A CN 1318737 A CN1318737 A CN 1318737A CN 01119332 CN01119332 CN 01119332 CN 01119332 A CN01119332 A CN 01119332A CN 1318737 A CN1318737 A CN 1318737A
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Abstract
A preparing method of silicon-based organic sound pressure sessor chip uses the organic material film-forming technique to replace the complicated chemical gas-phase deposition and plasma reinforcing chemical gas phase deposition technique to produce the lophodont optical wave guide structure of Mach-Zehder interferometer for simplfying the preparing process of each layer's film in optical wave guide structure. The process invention can be used in any sound pressure sensing occasions such as a hydrophone for searching submarine and stock of fish.
Description
The invention belongs to the photoelectronic sensor technical field, relate to a kind of improvement silica-based integrated micro machine sound pressure sensor preparation method.
The silica-based low-light machine sound pressure sensor the most approaching with the present invention, people such as existing abroad A.Nathan did the report about theoretical analysis and technology of preparing aspect.The chip of this sensor mainly is made up of silicon substrate, silicon dioxide layer, silicon nitride layer, Mach-Zehnder interferometer ridge optical waveguide, silicon vibrating membrane and sensing window.Wherein the Mach-Zehnder interferometer is SiO
2/ Si
3N
4/ SiO
2/ Si optical waveguide structure.The preparation technology of silicon sound pressure sensor chip for micro optical machine mainly depends on technology such as advanced chemical vapor deposition and plasma reinforced chemical vapour deposition, and its concrete preparation technology is as follows:
(1) select the silicon single crystal flake in (100) crystal orientation as silicon substrate.
(2) at silicon substrate back side thermal oxide growth silicon dioxide protective film.
(3), adopt chemical vapour deposition technique growthing silica layer to cover covering as second of optical waveguide in the silicon substrate front.
(4) adopt plasma reinforced chemical vapour deposition technology growth silicon nitride or nitrogen-oxygen-silicon layer first clad as optical waveguide.
(5) adopt the sandwich layer of chemical vapour deposition technique growthing silica layer, and prepare Mach-Zehnder interferometer ridge optical waveguide structure with reactive ion etching technique as optical waveguide.
(6) carry out the double-sided alignment photoetching at the silicon substrate back side, utilize the silicon anisotropic etching technology to erode away the silicon vibrating membrane.
There are the following problems for above-mentioned preparation technology:
Silicon nitride layer in the Mach-Zehnder interferometer ridge optical waveguide structure and silicon dioxide layer need utilize chemical vapor deposition and plasma reinforced chemical vapour deposition technology to finish, the equipment needed thereby costliness, complex process makes the cost of manufacture of device higher, is unfavorable for the practicability of device.
The purpose that the present invention proposes is to address the above problem, by introducing organic optical materials, device preparing process is simplified, thereby will be provided a kind of cost of manufacture that makes to be minimized the preparation method of the silicon-based organic sound pressure sensor chip for micro optical machine that performance is improved.
The present invention is as follows for the preparation technology of organic sound pressure sensor chip for micro optical machine:
1) at the pros and cons of the silicon substrate of twin polishing thermal oxide growth silicon dioxide protective film simultaneously;
2) utilize photoetching technique, make the figure of silicon sensing window at the silicon substrate back side by lithography;
3) utilize the silicon anisotropic etching technology, erode away silicon sensing window, make the silicon vibrating membrane reach the thickness of design;
4) method of employing dipping or spin coating evenly is coated on the silicon substrate front with low-refraction organic solution, and drying is solidified fully volatilizees the solvent in the low-refraction organic solution, forms lower optical waveguide second clad of refractive index;
5) method of employing spin coating evenly is coated on optical waveguide second cover surface with high index of refraction organic solution, and drying is solidified fully volatilizees the solvent in the high index of refraction organic solution, forms higher optical waveguide first clad of refractive index;
6) method of employing dipping or spin coating evenly is coated on optical waveguide first cover surface with low-refraction organic solution, and drying is solidified fully volatilizees the solvent in the low-refraction organic solution, forms the lower optical waveguide sandwich layer of refractive index;
7) utilize the dual surface lithography technique of alignment, prepare the mask graph of Mach-Zehnder interferometer ridge optical waveguide structure at the waveguide core laminar surface;
8) according to selected low-refraction organic optical materials, can adopt reactive ion etching or ultraviolet bleaching technology on the optical waveguide sandwich layer, to prepare Mach-Zehnder interferometer ridge optical waveguide structure respectively, thereby prepare silicon-based organic sound pressure sensor chip for micro optical machine.
Good effect of the present invention: in silica-based integrated micro machine sound pressure sensor technology of preparing, introduce organic optical materials, technologies of preparing such as complicated chemical vapor deposition and plasma reinforced chemical vapour deposition have been replaced with the organic material film technique, make that technology of the present invention is simple, easy to make, cheap.And can be according to the needs of sensor, improve the performance of material by synthesis modification to organic optical materials, as optical transparence, the physical strength index, elasticity coefficient size etc., organic optical materials has the selection range of broad, all these be inorganic material can not compare, the present invention proposes, utilize organic optical materials to make Mach-Zehnder interferometer ridge optical waveguide structure, make that the preparation technology of each layer film obtains simplifying in the optical waveguide structure, cost of manufacture is minimized, and the method that the present invention proposes helps promoting the practicability of this sensor.The silica-based low-light machine sound pressure sensor that utilizes the present invention to prepare can be widely used in various sound wave sensing occasions, as is prepared into the nautical receiving set in the ocean, can be used to search of carrying out the submarine and the shoal of fish or the like.
Description of drawings:
Fig. 1 is a structural upright synoptic diagram of the present invention.
Fig. 2 is the sectional view at dotted line AB place among Fig. 1.
The embodiment of the invention is as depicted in figs. 1 and 2: it comprises silicon substrate 1 to utilize the present invention to prepare silicon-based organic sound pressure sensor chip for micro optical machine, low-refraction organic film 2, high index of refraction organic film 3, low-refraction organic film 4, Mach-Zehnder interferometer ridge optical waveguide 5,6,7,8, the silicon vibrating membrane 9 of sensor and sensing window 10.
Silicon substrate 1 is selected twin polishing (100) silicon single crystal flake for use, adheres to low-refraction organic film 2 in silicon substrate 1 front, and low-refraction organic film 2 is second clad of optical waveguide 5,6,7,8.Adhere to high index of refraction organic film 3 on low-refraction organic membrane 2, high index of refraction organic film 3 is first clad of optical waveguide 5,6,7,8.Adhere to low-refraction organic film 4 on high index of refraction organic film 3, low-refraction organic film 4 is the sandwich layer of optical waveguide 5,6,7,8.High index of refraction organic film 3 can be selected polyimide-type materials for use, low-refraction organic film 2,4 can be selected organic siliconresin class or polymethylmethacrylate class material for use, require above-mentioned selected organic optical materials, film after the curing wants optical transparence good, loss is low, surfacing is bright and clean, and certain mechanical strength is arranged, and its refractive index and elasticity coefficient are suitable.Utilize reactive ion etching or ultraviolet bleaching technology again, on low-refraction organic film 4, prepare the structure of Mach-Zehnder interferometer ridge optical waveguide 5,6,7,8.Wherein, optical waveguide 5 is the input end of Mach-Zehnder interferometer, and optical waveguide 6 is the reference arm of Mach-Zehnder interferometer, and optical waveguide 7 is the pickup arm of Mach-Zehnder interferometer, and optical waveguide 8 is the output terminal of Mach-Zehnder interferometer.Utilize the anisotropic corrosion technique of silicon to erode away sensing window 10 at silicon substrate 1 back side, the corrosion depth of sensing window 10 can be determined according to silicon vibrating membrane 9 required thickness.
Claims (8)
- A kind of preparation of silicon-based organic sound pressure sensor chip for micro optical machine step comprises:1) at the pros and cons of the silicon substrate of twin polishing thermal oxide growth silicon dioxide protective film simultaneously;
- 2) utilize photoetching technique, make the figure of silicon sensing window at the silicon substrate back side by lithography;
- 3) utilize the silicon anisotropic etching technology, erode away silicon sensing window, make the silicon vibrating membrane reach the thickness of design;It is characterized in that also comprising the steps:
- 4) method of employing dipping or spin coating evenly is coated on the silicon substrate front with low-refraction organic solution, and drying is solidified fully volatilizees the solvent in the low-refraction organic solution, forms lower optical waveguide second clad of refractive index;
- 5) method of employing spin coating evenly is coated on optical waveguide second cover surface with high index of refraction organic solution, and drying is solidified fully volatilizees the solvent in the high index of refraction organic solution, forms higher optical waveguide first clad of refractive index;
- 6) with the method for dipping or spin coating, low-refraction organic solution evenly is coated on optical waveguide first cover surface, drying is solidified fully volatilizees the solvent in the low-refraction organic solution, forms the lower optical waveguide sandwich layer of refractive index;
- 7) utilize the dual surface lithography technique of alignment, prepare the mask graph of Mach-Zehnder interferometer ridge optical waveguide structure at the waveguide core laminar surface;
- 8) according to selected low-refraction organic optical materials, can adopt reactive ion etching or ultraviolet bleaching technology on the optical waveguide sandwich layer, to prepare Mach-Zehnder interferometer ridge optical waveguide structure respectively, thereby prepare silicon-based organic sound pressure sensor chip for micro optical machine.
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| Application Number | Priority Date | Filing Date | Title |
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| CN 01119332 CN1318737A (en) | 2001-05-29 | 2001-05-29 | Preparation of silicon-based organic sound pressure sensor chip for micro optical machine |
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| CN 01119332 CN1318737A (en) | 2001-05-29 | 2001-05-29 | Preparation of silicon-based organic sound pressure sensor chip for micro optical machine |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101490590B (en) * | 2006-07-18 | 2010-12-08 | Jsr股份有限公司 | Method for manufacturing optical waveguide |
| CN102065365A (en) * | 2010-12-03 | 2011-05-18 | 中国电子科技集团公司第四十九研究所 | Silicon micro-composite thin film chip manufacture method and optical fiber sound pressure sensor using the silicon micro-composite thin film chip |
| CN101813622B (en) * | 2009-02-19 | 2012-10-17 | 中国科学院电子学研究所 | Optical-waveguide two-channel interferometer array |
| CN104950267A (en) * | 2015-06-29 | 2015-09-30 | 浙江大学 | M-Z type glass-based optical waveguide magnetic field intensity sensor based on magnetic fluid |
| US9745868B2 (en) | 2012-05-31 | 2017-08-29 | Man Diesel & Turbo Se | Method for operating a solar installation |
| CN108427159A (en) * | 2018-05-16 | 2018-08-21 | 德州尧鼎光电科技有限公司 | A kind of deep ultraviolet planar optical waveguide |
| CN108645511A (en) * | 2018-05-14 | 2018-10-12 | 电子科技大学 | A kind of new ultra-violet light intensity detector of Mach-Zehnder interferometers structure |
| CN108646345A (en) * | 2018-05-16 | 2018-10-12 | 德州尧鼎光电科技有限公司 | A kind of deep ultraviolet planar optical waveguide production method |
-
2001
- 2001-05-29 CN CN 01119332 patent/CN1318737A/en active Pending
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101490590B (en) * | 2006-07-18 | 2010-12-08 | Jsr股份有限公司 | Method for manufacturing optical waveguide |
| US7916992B2 (en) | 2006-07-18 | 2011-03-29 | Jsr Corporation | Dry film for optical waveguide and method for manufacturing optical waveguide by using the dry film |
| CN101813622B (en) * | 2009-02-19 | 2012-10-17 | 中国科学院电子学研究所 | Optical-waveguide two-channel interferometer array |
| CN102065365A (en) * | 2010-12-03 | 2011-05-18 | 中国电子科技集团公司第四十九研究所 | Silicon micro-composite thin film chip manufacture method and optical fiber sound pressure sensor using the silicon micro-composite thin film chip |
| CN102065365B (en) * | 2010-12-03 | 2013-12-11 | 中国电子科技集团公司第四十九研究所 | Silicon micro-composite thin film chip manufacture method and optical fiber sound pressure sensor using the silicon micro-composite thin film chip |
| US9745868B2 (en) | 2012-05-31 | 2017-08-29 | Man Diesel & Turbo Se | Method for operating a solar installation |
| CN104950267A (en) * | 2015-06-29 | 2015-09-30 | 浙江大学 | M-Z type glass-based optical waveguide magnetic field intensity sensor based on magnetic fluid |
| CN108645511A (en) * | 2018-05-14 | 2018-10-12 | 电子科技大学 | A kind of new ultra-violet light intensity detector of Mach-Zehnder interferometers structure |
| CN108427159A (en) * | 2018-05-16 | 2018-08-21 | 德州尧鼎光电科技有限公司 | A kind of deep ultraviolet planar optical waveguide |
| CN108646345A (en) * | 2018-05-16 | 2018-10-12 | 德州尧鼎光电科技有限公司 | A kind of deep ultraviolet planar optical waveguide production method |
| CN108427159B (en) * | 2018-05-16 | 2020-04-14 | 德州尧鼎光电科技有限公司 | Deep ultraviolet planar optical waveguide |
| CN108646345B (en) * | 2018-05-16 | 2020-04-14 | 德州尧鼎光电科技有限公司 | Method for manufacturing deep ultraviolet planar optical waveguide |
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