CN1317736C - Method for preparing monolithic fluid spraying appratus - Google Patents
Method for preparing monolithic fluid spraying appratus Download PDFInfo
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- CN1317736C CN1317736C CNB031540309A CN03154030A CN1317736C CN 1317736 C CN1317736 C CN 1317736C CN B031540309 A CNB031540309 A CN B031540309A CN 03154030 A CN03154030 A CN 03154030A CN 1317736 C CN1317736 C CN 1317736C
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Abstract
The present invention provides a making method for monolithic fluid spraying devices, which comprises the following steps: firstly, forming a patterned sacrificial layer on the first surface of the substrate; then forming a patterned structural layer on the substrate to cover the patterned sacrificial layer; then forming a patterned resistive layer on the structural layer to form a heater; then forming a patterned isolated layer to cover the structural layer, and the isolated layer has a heater contact window and a first opening; forming a patterned conducting layer on the structural layer, forming a signal transmission circuit through connecting the heater contact window with the heater; then forming a patterned protective layer on the substrate to cover the isolated layer and the conducting layer, and the protective layer has a signal transmission circuit contact window and a second opening corresponding to the first opening; forming a fluid passage on the second surface of the substrate to expose the sacrificial layer; then removing the sacrificial layer to form a fluid cavity; finally, etching the structural layer along the second and the first openings so as to form a spraying hole communicated with the flow cavity.
Description
Technical field
The present invention relates to the manufacture method of a kind of monolithic (monolithic) fluid ejection apparatus, particularly relate to a kind of improvement of manufacturing process of monolithic fluid ejecting device.
Background technology
In general monolithic fluid ejecting device manufacture craft, because micro electronmechanical usually is to divide other manufacturer with integrated circuit manufactory, integrated circuit (IC) apparatus and electric component of microcomputer are divided into two manufacturing process independently, so normally after integrated circuit manufactory finishes all integrated circuit (IC) apparatus manufacture crafts earlier, send into MEMS (micro electro mechanical system) manufactory again, the electric component of microcomputer after carrying out is made.
But in integrated circuit (IC) apparatus and electric component of microcomputer manufacturing process, often use film making steps such as identical plated metal, dielectric layer and etching through hole, thus cause many production costs repeat increase and waste.
Known monolithic fluid ejecting device, owing to used the micro electronmechanical manufacture craft of part, therefore do not need packaging technology, just can on chip, form the required every assembly of injection apparatus simultaneously, as fluid cavity, heater, drive circuit and spray orifice etc., has the higher accuracy of manufacture.
Yet with regard to the manufacture craft of present monolithic fluid ejecting device, be to utilize semiconductor technology to finish assemblies such as required drive circuit and heater earlier, utilize micro electronmechanical technology to finish assemblies such as required fluid cavity and spray orifice again.Shown in Figure 1A and the 1B is the profile of the manufacture craft of known monolithic fluid ejecting device, and wherein Figure 1A shows the FEOL that utilizes semiconductor technology to finish, and Figure 1B shows the last part technology that utilizes micro electronmechanical technology to finish.See also Figure 1A, provide substrate 10, as silicon substrate.Form sacrificial patterned 20 on substrate 10.Sacrifice layer 20 is made of silica.Then, form pattern structure layer 30 on substrate 10, and overlay pattern sacrifice layer 20.Structure sheaf 30 can be made of the formed silicon nitride layer of chemical vapour deposition technique (CVD).Form patterned electricity resistance layer 40 on structure sheaf 30, with as heater.Resistive layer 40 is by HfB
2, TaAl, TaN or TiN constitute.Form pattern isolated layer 50, its covered structure layer 30 and have heater contact hole 45.Form patterned conductive layer on structure sheaf 30, and insert heater contact hole 45, to form signal transmission line road 62.Form protective layer 70 on substrate 10, it covers separator 50 and conductive layer and has signal transmission line road contact hole 75, and conductive layer is exposed, and is beneficial to follow-up packaging process.
See also Figure 1B, adopt wet etching, for example with potassium hydroxide (KOH) solution, carry out etching with substrate 10 the back side on form fluid passage 80, and expose sacrifice layer 20.Then, again with hydrofluoric acid solution etching sacrificial layer 20 to form fluid cavity 90.At last, after through photoresist coating, exposure, developing procedure, etching structure layer 30 is to form the spray orifice 95 that is communicated with fluid cavity 90.So far, finish monolithic fluid ejecting device.
By above-mentioned technical process, the making of spray orifice 95 needs penetrant structure layer 30, separator 50 and protective layer 70 at least as can be known.And in FEOL, carrying out signal transmission line road 62 when being connected and when making the contact hole 75 on signal transmission line road with heater 40, all can carry out etching to separator 50 and protective layer 70.Therefore if the etching of separator 50 in the spray orifice manufacture craft of last part technology and protective layer 70 is incorporated in FEOL, the spray orifice manufacture craft of back segment only will be reduced to structure sheaf 30 will be carried out etching.
United States Patent (USP) 6,102,530 have shown by a kind of monolithic fluid ejecting device in conjunction with semiconductor technology and the making of micro electronmechanical technology.Because structure sheaf is suspended on the fluid cavity, therefore for the rate of finished products and the durability degree of product, all need do quite harsh control, therefore increased the difficulty of manufacture craft.
Summary of the invention
In view of this, the purpose of this invention is to provide a kind of manufacture method of monolithic fluid ejecting device, part last part technology step is incorporated in the FEOL, can improve make efficiency so that the spray orifice technology of back segment reduces thus.
According to above-mentioned purpose, the invention provides a kind of manufacture method of monolithic fluid ejecting device, comprising following steps: substrate is provided; Form sacrificial patterned on first of substrate; Form the pattern structure layer on substrate, and the overlay pattern sacrifice layer; Form the patterned electricity resistance layer on structure sheaf, to form heater; Form the pattern isolated layer, covered structure layer and have the heater contact hole and first opening, wherein heater contact hole exposed portions serve heater at least; Form patterned conductive layer on separator, and be connected with heater, to form the signal transmission line road via the heater contact hole; Form the patterning protective layer on substrate, cover separator and conductive layer, and have signal transmission line road contact hole and corresponding to second opening of first opening; Form the fluid passage on second of substrate, and second relative with first, to expose sacrifice layer; Remove sacrifice layer to form fluid cavity; And along second opening and first opening with the etching structure layer, thereby form the spray orifice that is communicated with fluid cavity.
According to above-mentioned purpose, the present invention also provides a kind of manufacture method of monolithic fluid ejecting device, may further comprise the steps: substrate is provided; Form sacrificial patterned on first of substrate; Form the pattern structure layer on substrate, and the overlay pattern sacrifice layer; Form the patterned electricity resistance layer on structure sheaf, to form heater; Form the pattern isolated layer, covered structure layer and have the heater contact hole, wherein heater contact hole exposed portions serve heater at least; Form patterned conductive layer on separator, and be connected with heater, to form the signal transmission line road via the heater contact hole; Form protective layer on substrate, cover separator and conductive layer; Form the fluid passage in second of substrate, and second relative with first, to expose sacrifice layer; Remove sacrifice layer to form fluid cavity; And etching protective layer, separator and structure sheaf, to form the spray orifice that is communicated with fluid cavity, wherein the protective layer through etching forms the signal transmission line road contact hole on exposed portions serve signal transmission line road at least simultaneously.
According to above-mentioned purpose, the present invention also provides a kind of manufacture method of monolithic fluid ejecting device, may further comprise the steps: substrate is provided; Form sacrificial patterned on first of substrate; Form the pattern structure layer on substrate, and the overlay pattern sacrifice layer; Form the patterned electricity resistance layer on structure sheaf, to form heater; Form the pattern isolated layer, covered structure layer and have the heater contact hole, wherein heater contact hole exposed portions serve heater at least; Form patterned conductive layer on separator, and insert the heater contact hole, to form the signal transmission line road; Form protective layer on substrate, cover separator and conductive layer; At least etching protective layer and separator are to form opening; Form the fluid passage in second of substrate, and second relative with first, to expose sacrifice layer; Remove sacrifice layer, to form fluid cavity; And along opening etching structure layer, to form the spray orifice that is communicated with fluid cavity.
In the above-mentioned manufacture method, the step that forms opening also can comprise the etched portions structure sheaf
According to above-mentioned purpose, the present invention also provides a kind of manufacture method of monolithic fluid ejecting device, may further comprise the steps: substrate is provided; Form sacrificial patterned on first of substrate; Form the pattern structure layer on substrate, and the overlay pattern sacrifice layer; Form conductive layer on structure sheaf; Form the patterned electricity resistance layer on conductive layer, to form heater; Conductive layer is carried out patterning, to form the signal transmission line road; Form protective layer on substrate, covered structure layer, conductive layer and resistive layer; The etching protective layer is to form opening; Form the fluid passage in second of substrate, and second relative with first, to expose sacrifice layer; Remove sacrifice layer to form fluid cavity; And along opening etching structure layer, to form the spray orifice that is communicated with fluid cavity.
In above-mentioned manufacture method of the present invention, the material of separator can be silica; The material of protective layer can form for silica, silicon nitride, carborundum or by its composite stack.
Below cooperate diagram and preferred embodiment, illustrate in greater detail the present invention.
Description of drawings
Shown in Figure 1A and the 1B is the profile of the manufacture craft of known monolithic fluid ejecting device, and wherein Figure 1A shows the FEOL that utilizes semiconductor technology to finish, and Figure 1B shows the last part technology that utilizes micro electronmechanical technology to finish;
Shown in Fig. 2 A to 2F is the profile of manufacture craft of the monolithic fluid ejecting device of first preferred embodiment of the invention, wherein Fig. 2 A to 2D shows the FEOL that utilizes semiconductor technology to finish, and Fig. 2 E and 2F show the last part technology that utilizes micro electronmechanical technology to finish;
Shown in Fig. 3 A to 3C is the profile of manufacture craft of the monolithic fluid ejecting device of second preferred embodiment of the invention, wherein Fig. 3 A shows the FEOL that utilizes semiconductor technology to finish, and Fig. 3 B and 3C show the last part technology that utilizes micro electronmechanical technology to finish;
Shown in Fig. 4 A and the 4C is the profile of manufacture craft of the monolithic fluid ejecting device of third preferred embodiment of the invention, wherein Fig. 4 A shows the FEOL that utilizes semiconductor technology to finish, and Fig. 4 B and 4C show the last part technology that utilizes micro electronmechanical technology to finish; And
Shown in Fig. 5 A to 5D is the profile of manufacture craft of the monolithic fluid ejecting device of four preferred embodiment of the invention, wherein Fig. 5 A and 5B show the FEOL that utilizes semiconductor technology to finish, and Fig. 5 C and 5D show the last part technology that utilizes micro electronmechanical technology to finish.
Embodiment
First embodiment
Shown in Fig. 2 A to 2F is the profile of manufacture craft of the monolithic fluid ejecting device of first embodiment of the invention, wherein Fig. 2 A to 2D shows the FEOL that utilizes semiconductor technology to finish, and Fig. 2 E and 2F show the last part technology that utilizes micro electronmechanical technology to finish.See also Fig. 2 A, form sacrificial patterned 120 on the substrate 100 of for example monocrystalline substrate.The boron phosphorus silicate glass (BPSG) that sacrifice layer 120 is deposited by the chemical vapor deposition (CVD) method, phosphosilicate glass (PSG) or other silica material constitute.Then, compliance ground forms pattern structure layer 130 on substrate 100, and overlay pattern sacrifice layer 120.Structure sheaf 130 can be by the formed silicon nitride layer of chemical vapour deposition technique (CVD).Then, form patterned electricity resistance layer 140 on structure sheaf 130, with as heater.Resistive layer 140 is formed as HfB by the physical vaporous deposition (PVD) of for example evaporation, sputtering method or reactive sputtering method
2, TaAl, TaN or other resistance material.Then, compliance ground forms separator 150, and covered structure layer 130.
See also Fig. 2 B, adopt photoetching and etch step, define separator 150 to form the heater contact hole 145 and the first opening 195a.Wherein the first opening 195a is as the predecessor of the spray orifice of fluid ejection apparatus.
See also Fig. 2 C, adopt physical vaporous deposition (PVD) to deposit for example patterned conductive layer 162 of Al, Cu, AlCu or other conductor material, and insert in the heater contact hole 145, to form signal transmission line road 162.
See also Fig. 2 D, form protective layer 170 on substrate 100, and cover separator 150 and signal transmission line road 162.Then, adopt photoetching and etch step, define protective layer 170, make conductive layer expose, so that follow-up packaging operation to form signal transmission line road contact hole 175; And along the first opening 195a etching protective layer 170, to form the second opening 195b.Wherein the second opening 195b is as the predecessor of the spray orifice of fluid ejection apparatus.
See also Fig. 2 E, adopt wet etching, carry out etching at the back side of substrate 100 with formation fluid passage 180, and expose sacrifice layer 120.Then, again etching sacrificial layer 120 to form fluid cavity 190.
See also Fig. 2 F, after through photoresist coating, exposure, developing process, along the second opening 195b etching structure layer 130, preferred using plasma etching, chemical gas etching, reactive ion etching or laser ablation technology are to form the spray orifice 195 that is communicated with fluid cavity 190.So far, finish monolithic fluid ejecting device.
Second embodiment
Shown in Fig. 3 A to 3C is the profile of manufacture craft of the monolithic fluid ejecting device of second embodiment of the invention.Wherein Fig. 3 A shows the FEOL that utilizes semiconductor technology to finish, and Fig. 3 B and 3C show the last part technology that utilizes micro electronmechanical technology to finish.See also Fig. 3 A, form sacrificial patterned 120 on the substrate 100 of for example monocrystalline substrate.The boron phosphorus silicate glass (BPSG) that sacrifice layer 120 is deposited by the chemical vapor deposition (CVD) method, phosphosilicate glass (PSG) or other silica material constitute.Then, compliance ground forms pattern structure layer 130 on substrate 100, and overlay pattern sacrifice layer 120.Structure sheaf 130 can be made of the formed silicon nitride layer of chemical vapour deposition technique (CVD).Then, form patterned electricity resistance layer 140 on structure sheaf 130, with as heater.Resistive layer 140 is formed as HfB by the physical vaporous deposition (PVD) of for example evaporation, sputtering method or reactive sputtering method
2, TaAl, TaN or other resistance material.Then, compliance ground forms separator 150, and covered structure layer 130.
Then, adopt photoetching and etch step, define separator 150 to form heater contact hole 145.Then, the patterned conductive layer 162 that deposits for example Al, Cu, AlCu or other conductor material with physical vaporous deposition (PVD) and is inserted heater contact hole 145 on separator 150, to form signal transmission line road 162.Form protective layer 170 on substrate 100, cover separator 150 and signal transmission line road 162.
See also Fig. 3 B, carry out etching at the back side of substrate 100 with formation fluid passage 180, and expose sacrifice layer 120.Then, etching sacrificial layer 120 is to form fluid cavity 190.
See also Fig. 3 C, after through photoresist coating, exposure, development step, etching protective layer 170 and be etching stop layer with signal transmission line road 162 forms signal transmission line road contact hole 175, makes conductive layer expose, and is beneficial to follow-up packaging operation.While etching protective layer 170, separator 150 and structure sheaf 130 between two heaters 140, preferred using plasma etching, chemical gas etching, reactive ion etching or laser ablation technology, thus form the spray orifice 195 that is communicated with fluid cavity.Run through structure sheaf 130, to form the spray orifice 195 that is communicated with fluid cavity 190.So far, finish monolithic fluid ejecting device.
The 3rd embodiment
Shown in Fig. 4 A to 4C is the profile of manufacture craft of the monolithic fluid ejecting device of third embodiment of the invention.Wherein Fig. 4 A shows the FEOL that utilizes semiconductor technology to finish, and Fig. 4 B and 4C show the last part technology that utilizes micro electronmechanical technology to finish.See also Fig. 4 A, form sacrificial patterned 120 on monocrystalline substrate substrate 100 for example.The boron phosphorus silicate glass (BPSG) that sacrifice layer 120 is deposited by the chemical vapor deposition (CVD) method, phosphosilicate glass (PSG) or other silica material constitute.Then, compliance ground forms pattern structure layer 130 on substrate 100, and overlay pattern sacrifice layer 120.Structure sheaf 130 can be made of the formed silicon nitride layer of chemical vapour deposition technique (CVD).Then, form patterned electricity resistance layer 140 on structure sheaf 130, with as heater.Resistive layer 140 is formed as HfB by for example physical vaporous deposition of evaporation, sputtering method or reactive sputtering (PVD)
2, TaAl, TaN or other resistance material.Then, compliance ground forms separator 150, covered structure layer 130.Then, adopt photoetching and etch step, define separator 150 to form heater contact hole 145.
Then, the patterned conductive layer 162 that deposits for example Al, Cu, AlCu or other conductor material with physical vaporous deposition (PVD) and is inserted heater contact hole 145 on separator 150, to form signal transmission line road 162.Form protective layer 170 on substrate 100, and cover separator 150 and signal transmission line road 162.Then, after through photoresist coating, exposure, development step, etching protective layer 170 and be etching stop layer with signal transmission line road 162 forms signal transmission line road contact hole 175, makes conductive layer expose, and is beneficial to follow-up packaging operation.While etching protective layer 170 and separator 150 between two heaters 140 is to form opening 195b.Its split shed 195b is as the predecessor of the spray orifice of fluid ejection apparatus.
See also Fig. 4 B, carry out etching at the back side of this substrate 100 with formation fluid passage 180 with wet etching, and expose sacrifice layer 120.Then, etching sacrificial layer 120 is to form fluid cavity 190.
See also Fig. 4 C, after through photoresist coating, exposure, developing process, along opening 195b etching structure layer 130, preferred using plasma etching, chemical gas etching, reactive ion etching or laser ablation technology are to form the spray orifice 195 that is communicated with fluid cavity 190.So far, finish monolithic fluid ejecting device.
The 4th embodiment
Shown in Fig. 5 A to 5D is the profile of manufacture craft of the monolithic fluid ejecting device of fourth embodiment of the invention.Wherein Fig. 5 A and 5B show the FEOL that utilizes semiconductor technology to finish, and Fig. 5 C and 5D show the last part technology that utilizes micro electronmechanical technology to finish.See also Fig. 5 A, form sacrificial patterned 120 on the substrate 100 of for example monocrystalline substrate.The boron phosphorus silicate glass (BPSG) that sacrifice layer 120 is deposited by the chemical vapor deposition (CVD) method, phosphosilicate glass (PSG) or other silica material constitute.Then, compliance ground forms pattern structure layer 130 on substrate 100, and overlay pattern sacrifice layer 120.Structure sheaf 130 can be made of the formed silicon nitride layer of chemical vapour deposition technique (CVD).Then, deposit the conductive layer 162 of for example Al, Cu, AlCu or other conductor material on structure sheaf 130 with physical vaporous deposition (PVD).Form patterned electricity resistance layer 140 with as heater.Resistive layer 140 is formed as HfB by for example physical vaporous deposition of evaporation, sputtering method or reactive sputtering (PVD)
2, TaAl, TaN or other resistance material.Conductive layer is carried out patterning to form signal transmission line road 162.Then, form protective layer 170 on substrate 100, and cover resistive layer 140 and signal transmission line road 162.
See also Fig. 5 B; after through photoresist coating, exposure, development step, etching protective layer 170 and be etching stop layer with signal transmission line road 162 forms the contact hole 175 on signal transmission line road; make conductive layer expose, be beneficial to follow-up packaging operation.While etching protective layer 170 between two heaters 140 is to form opening 195b.Its split shed 195b is as the predecessor of the spray orifice of fluid ejection apparatus.
See also Fig. 5 C, carry out etching at the back side of this substrate 100 with formation fluid passage 180 with wet etching, and expose sacrifice layer 120.Then etching sacrificial layer 120 is to form fluid cavity 190.
See also Fig. 5 D, after through photoresist coating, exposure, developing process, along opening 195b etching structure layer 130, preferred using plasma etching, chemical gas etching, reactive ion etching or laser ablation technology are to form the spray orifice 195 that is communicated with fluid cavity 190.So far, finish monolithic fluid ejecting device.
The 5th embodiment
Refer again to Fig. 5 A figure, form sacrificial patterned 120 on the substrate 100 of for example monocrystalline substrate.The boron phosphorus silicate glass (BPSG) that sacrifice layer 120 is deposited by the chemical vapor deposition (CVD) method, phosphosilicate glass (PSG) or other silica material constitute.Then, compliance ground forms pattern structure layer 130 on substrate 100, and overlay pattern sacrifice layer 120.Structure sheaf 130 can be made of the formed silicon nitride layer of chemical vapour deposition technique (CVD).Then, deposit the conductive layer 162 of for example Al, Cu, AlCu or other conductor material on structure sheaf 130 with physical vaporous deposition (PVD).Form patterned electricity resistance layer 140, with as heater.Resistive layer 140 is formed as HfB by for example physical vaporous deposition of evaporation, sputtering method or reactive sputtering (PVD)
2, TaAl, TaN or other resistance material.Conductive layer is carried out patterning to form signal transmission line road 162.Then, form protective layer 170 on substrate 100, cover resistive layer 140 and signal transmission line road 162.
Then, carry out etching at the back side of substrate 100 with formation fluid passage 180 with wet etching, and expose sacrifice layer 120.Then etching sacrificial layer 120 is to form fluid cavity 190.
Refer again to 5C figure; after through photoresist coating, exposure, development step; etching protective layer 170 and structure sheaf 130; preferred using plasma etching, chemical gas etching, reactive ion etching or laser ablation technology; and be etching stop layer with signal transmission line road 162; form signal transmission line road contact hole 175, make conductive layer expose, be beneficial to follow-up packaging operation.While etching protective layer 170 and structure sheaf 130 between two heaters 140 is to form the spray orifice 195 that is communicated with fluid cavity 190.So far, finish monolithic fluid ejecting device.
Feature of the present invention and effect are single spray orifice manufacturing process is divided into two above manufacturing process, and it is blended in other technology, make its cost be scattered in other technology.
Therefore, the present invention mainly makes the micro electronmechanical technology of part be blended in the semiconductor technology or part semiconductor technology is blended in the micro electronmechanical technology.Make its production cost that reduces integrated artistic, and improve the shortcoming that is produced in the spray orifice manufacturing process, and then improve known process yield.
Though the present invention describes as above by preferred embodiment; yet it is not to be used for limiting the present invention; any those of ordinary skill in the art; without departing from the spirit and scope of the present invention; can make and changing and retouching, so protection scope of the present invention should be as the criterion with the scope that appending claims was defined.
Claims (48)
1. the manufacture method of a monolithic fluid ejecting device may further comprise the steps:
Substrate is provided;
Form sacrificial patterned on first of substrate;
Form the pattern structure layer on substrate, and the overlay pattern sacrifice layer;
Form the patterned electricity resistance layer on structure sheaf, to form heater;
Form the pattern isolated layer, and the covered structure layer, and it have the heater contact hole and first opening, wherein heater contact hole exposed portions serve heater at least;
Form patterned conductive layer on separator, and be connected with heater, to form the signal transmission line road via the heater contact hole;
Form the patterning protective layer on substrate, and cover separator and conductive layer, and it has signal transmission line road contact hole and corresponding to second opening of first opening;
Form the fluid passage on second of substrate, to expose sacrifice layer, wherein second relative with first;
Remove sacrifice layer to form fluid cavity; And
Along second opening and the first opening etching structure layer, thereby form the spray orifice that is communicated with fluid cavity.
2. the manufacture method of monolithic fluid ejecting device as claimed in claim 1, the step that wherein forms the fluid passage adopts wet etching to finish.
3. the manufacture method of monolithic fluid ejecting device as claimed in claim 1 wherein removes sacrifice layer and adopts wet etching to finish with the step that forms fluid cavity.
4. the manufacture method of monolithic fluid ejecting device as claimed in claim 1 wherein forms the heater contact hole and first opening simultaneously.
5. the manufacture method of monolithic fluid ejecting device as claimed in claim 1, wherein the patterning protective layer also has signal transmission line road contact hole, and signal transmission line road contact hole exposed portions serve signal transmission line road at least.
6. the manufacture method of monolithic fluid ejecting device as claimed in claim 5 wherein forms the signal transmission line road contact hole and second opening simultaneously.
7. the manufacture method of monolithic fluid ejecting device as claimed in claim 1, wherein step using plasma etching, chemical gas etching, reactive ion etching or the laser ablation technology of etching structure layer.
8. the manufacture method of monolithic fluid ejecting device as claimed in claim 1, wherein the material of sacrifice layer is boron phosphorus silicate glass, phosphosilicate glass or silica.
9. the manufacture method of monolithic fluid ejecting device as claimed in claim 1, wherein the material of structure sheaf is a silicon nitride.
10. the manufacture method of monolithic fluid ejecting device as claimed in claim 1, wherein the material of resistive layer is HfB
2, TaAl, TaN or TiN.
11. the manufacture method of monolithic fluid ejecting device as claimed in claim 1, wherein the material of conductive layer is Al, Cu or its alloy.
12. the manufacture method of monolithic fluid ejecting device as claimed in claim 1, wherein the material of separator is a silica.
13. the manufacture method of monolithic fluid ejecting device as claimed in claim 1, wherein the material of protective layer is silica, silicon nitride, carborundum or is formed by its composite stack.
14. the manufacture method of a monolithic fluid ejecting device may further comprise the steps:
Substrate is provided;
Form sacrificial patterned on first of substrate;
Form the pattern structure layer on substrate, and the overlay pattern sacrifice layer;
Form the patterned electricity resistance layer on structure sheaf, to form heater;
Form the pattern isolated layer, and the covered structure layer, and it has the heater contact hole, wherein this heater contact hole exposed portions serve heater at least;
Form patterned conductive layer on separator, and be connected with heater, to form the signal transmission line road via the heater contact hole;
Form protective layer on substrate, and cover separator and conductive layer;
Form the fluid passage on second of substrate, and second relative with first, to expose sacrifice layer;
Remove sacrifice layer to form fluid cavity; And
Etching protective layer, separator and structure sheaf, to form the spray orifice that is communicated with fluid cavity, wherein the protective layer through etching forms the signal transmission line road contact hole on exposed portions serve signal transmission line road at least simultaneously.
15. the manufacture method of monolithic fluid ejecting device as claimed in claim 14, the step that wherein forms the fluid passage adopts wet etching to finish.
16. the manufacture method of monolithic fluid ejecting device as claimed in claim 14 wherein removes sacrifice layer and adopts wet etching to finish with the step that forms fluid cavity.
17. the manufacture method of monolithic fluid ejecting device as claimed in claim 14, wherein step using plasma etching, chemical gas etching, reactive ion etching or the laser ablation technology of etching structure layer.
18. the manufacture method of monolithic fluid ejecting device as claimed in claim 14, wherein the material of sacrifice layer is boron phosphorus silicate glass, phosphosilicate glass or silica.
19. the manufacture method of monolithic fluid ejecting device as claimed in claim 14, wherein the material of structure sheaf is a silicon nitride.
20. the manufacture method of monolithic fluid ejecting device as claimed in claim 14, wherein the material of resistive layer is HfB
2, TaAl, TaN or TiN.
21. the manufacture method of monolithic fluid ejecting device as claimed in claim 14, wherein the material of conductive layer is Al, Cu or its alloy material.
22. the manufacture method of monolithic fluid ejecting device as claimed in claim 14, wherein the material of separator is a silica.
23. the manufacture method of monolithic fluid ejecting device as claimed in claim 14, wherein the material of protective layer is silica, silicon nitride, carborundum or is formed by its composite stack.
24. the manufacture method of a monolithic fluid ejecting device may further comprise the steps:
Substrate is provided;
Form sacrificial patterned on first of substrate;
Form the pattern structure layer on substrate, and the overlay pattern sacrifice layer;
Form the patterned electricity resistance layer on structure sheaf, to form heater;
Form the pattern isolated layer, and the covered structure layer, and it has the heater contact hole, wherein heater contact hole exposed portions serve heater at least;
Form patterned conductive layer on separator, and insert the heater contact hole, to form the signal transmission line road;
Form protective layer on substrate, and cover separator and conductive layer;
At least etching protective layer and separator are to form opening;
Form the fluid passage on second of substrate, and second relative with first, to expose sacrifice layer;
Remove sacrifice layer to form fluid cavity; And
Along opening etching structure layer, to form the spray orifice that is communicated with fluid cavity.
25. the manufacture method of monolithic fluid ejecting device as claimed in claim 24, the step that wherein forms the fluid passage adopts wet etching to finish.
26. the manufacture method of monolithic fluid ejecting device as claimed in claim 24 wherein removes sacrifice layer and adopts wet etching to finish with the step that forms fluid cavity.
27. the manufacture method of monolithic fluid ejecting device as claimed in claim 24, wherein the protective layer through etching also has signal transmission line road contact hole, and signal transmission line road contact hole exposed portions serve signal transmission line road at least.
28. the manufacture method of monolithic fluid ejecting device as claimed in claim 27 wherein forms signal transmission line road contact hole and opening simultaneously.
29. the manufacture method of monolithic fluid ejecting device as claimed in claim 24, the step that wherein forms opening also comprises the etched portions structure sheaf.
30. the manufacture method of monolithic fluid ejecting device as claimed in claim 24, wherein step using plasma etching, chemical gas etching, reactive ion etching or the laser ablation technology of etching structure layer.
31. the manufacture method of monolithic fluid ejecting device as claimed in claim 24, wherein the material of sacrifice layer is boron phosphorus silicate glass, phosphosilicate glass or silica.
32. the manufacture method of monolithic fluid ejecting device as claimed in claim 24, wherein the material of structure sheaf is a silicon nitride.
33. the manufacture method of monolithic fluid ejecting device as claimed in claim 24, wherein the material of resistive layer is HfB
2, TaAl, TaN or TiN.
34. the manufacture method of monolithic fluid ejecting device as claimed in claim 24, wherein the material of conductive layer is Al, Cu or its alloy material.
35. the manufacture method of monolithic fluid ejecting device as claimed in claim 24, wherein the material of separator is a silica.
36. the manufacture method of monolithic fluid ejecting device as claimed in claim 24, wherein the material of protective layer is silica, silicon nitride, carborundum or is formed by its composite stack.
37. the manufacture method of a monolithic fluid ejecting device may further comprise the steps:
Substrate is provided;
Form sacrificial patterned on first of substrate;
Form the pattern structure layer on substrate, and the overlay pattern sacrifice layer;
Form conductive layer on structure sheaf;
Form the patterned electricity resistance layer on conductive layer, to form heater;
Conductive layer is carried out patterning, to form the signal transmission line road;
Form protective layer on substrate, and covered structure layer, conductive layer and resistive layer;
The etching protective layer is to form opening;
Form the fluid passage on second of substrate, and second relative with first, to expose sacrifice layer;
Remove sacrifice layer to form fluid cavity; And
Along opening etching structure layer, to form the spray orifice that is communicated with fluid cavity.
38. the manufacture method of monolithic fluid ejecting device as claimed in claim 37, the step that wherein forms the fluid passage adopts wet etching to finish.
39. the manufacture method of monolithic fluid ejecting device as claimed in claim 37 wherein removes sacrifice layer and adopts wet etching to finish with the step that forms fluid cavity.
40. the manufacture method of monolithic fluid ejecting device as claimed in claim 37, wherein the protective layer through etching also has signal transmission line road contact hole, and signal transmission line road contact hole exposed portions serve signal transmission line road at least.
41. the manufacture method of monolithic fluid ejecting device as claimed in claim 40 wherein forms signal transmission line road contact hole and opening simultaneously.
42. the manufacture method of monolithic fluid ejecting device as claimed in claim 37, wherein step using plasma etching, chemical gas etching, reactive ion etching or the laser ablation technology of etching structure layer.
43. the manufacture method of monolithic fluid ejecting device as claimed in claim 37, wherein the material of sacrifice layer is boron phosphorus silicate glass, phosphosilicate glass or silica.
44. the manufacture method of monolithic fluid ejecting device as claimed in claim 37, wherein the material of structure sheaf is a silicon nitride.
45. the manufacture method of monolithic fluid ejecting device as claimed in claim 37, wherein the material of resistive layer is HfB
2, TaAl, TaN or TiN.
46. the manufacture method of monolithic fluid ejecting device as claimed in claim 37, wherein the material of conductive layer is Al, Cu or its alloy material.
47. the manufacture method of monolithic fluid ejecting device as claimed in claim 37, wherein the material of protective layer is silica, silicon nitride, carborundum or is formed by its composite stack.
48. the manufacture method of a monolithic fluid ejecting device may further comprise the steps:
Substrate is provided;
Form sacrificial patterned on first of substrate;
Form the pattern structure layer on substrate, and the overlay pattern sacrifice layer;
Form conductive layer on structure sheaf;
Form the patterned electricity resistance layer on conductive layer, to form heater;
Conductive layer is carried out patterning, to form the signal transmission line road;
Form protective layer on substrate, and covered structure layer, conductive layer and resistive layer;
Form the fluid passage on second of substrate, and second relative with first, to expose sacrifice layer;
Remove sacrifice layer to form fluid cavity; And
Etching protective layer and structure sheaf in regular turn are to form the spray orifice that is communicated with fluid cavity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031540309A CN1317736C (en) | 2003-08-14 | 2003-08-14 | Method for preparing monolithic fluid spraying appratus |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031540309A CN1317736C (en) | 2003-08-14 | 2003-08-14 | Method for preparing monolithic fluid spraying appratus |
Publications (2)
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| CN1579642A CN1579642A (en) | 2005-02-16 |
| CN1317736C true CN1317736C (en) | 2007-05-23 |
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| CNB031540309A Expired - Fee Related CN1317736C (en) | 2003-08-14 | 2003-08-14 | Method for preparing monolithic fluid spraying appratus |
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Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JP6516613B2 (en) * | 2015-07-24 | 2019-05-22 | キヤノン株式会社 | Substrate for liquid discharge head and method of manufacturing substrate for liquid discharge head |
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Also Published As
| Publication number | Publication date |
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| CN1579642A (en) | 2005-02-16 |
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