CN1300934C - Energy gap reference circuit - Google Patents
Energy gap reference circuit Download PDFInfo
- Publication number
- CN1300934C CN1300934C CNB031424260A CN03142426A CN1300934C CN 1300934 C CN1300934 C CN 1300934C CN B031424260 A CNB031424260 A CN B031424260A CN 03142426 A CN03142426 A CN 03142426A CN 1300934 C CN1300934 C CN 1300934C
- Authority
- CN
- China
- Prior art keywords
- transistor
- voltage
- transistorized
- energy gap
- gap reference
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Abstract
The present invention relates to an energy gap reference circuit which can generate an energy gap reference voltage which is difficult to change with temperature, and simultaneously, the circuit collocation mode can also eliminate the bad status of an energy gap reference voltage caused by transistor channel modulation effect and leakage current effect at high temperature in the existing energy gap reference circuit.
Description
(1) technical field
The relevant a kind of energy gap reference circuit of the present invention refers to that especially a kind of energy gap reference voltage is difficult for the energy gap reference circuit that changes with voltage source and temperature.
(2) background technology
Existing energy gap reference circuit as shown in Figure 1, it is by three P-type mos field-effect transistors (MOSFET) 111,112 and 113, two N type metal oxide semiconductor field-effect transistors 121 and 122, resistance 131 and 132, and pnp type two-carrier junction transistor (BJT) 141,142 and 143 couple jointly and form.Wherein the P-type mos field-effect transistor 111,112 and 113 is all identical with channel region (Channel) breadth length ratio (AspectRatio) of N type metal oxide semiconductor field-effect transistor 121 and 122, pnp type two-carrier junction transistor 141 and 142 pn connect the face area also for identical, and the pn of pnp type two-carrier junction transistor 143 connects the integral multiple that the face area is pnp type two-carrier junction transistor 141 and 142, and be at least 2 times, so pnp type two-carrier junction transistor 143 can also connect the pnp type two-carrier junction transistor that the face area is equal to pnp type two-carrier junction transistor 141 and 142 by at least two pn, so that (the emitter-base bandgap grading end connects the emitter-base bandgap grading end with coupling extremely mutually, base terminal connects base terminal and collector terminal connects collector terminal) mode form.
Because being the modes with current mirror, mos field effect transistor 112,113,121 and 122 couples, so current i
111, i
112, i
113, i
121And i
122Be all identical, but the pn of two-carrier junction transistor 143 connects the face area greater than two-carrier junction transistor 141 and 142, though therefore the voltage difference between two-carrier junction transistor 141 and 142 emitter-base bandgap grading ends and the base terminal is equal to each other, but all greater than the emitter-base bandgap grading end of two-carrier junction transistor 143 and the voltage difference between the base terminal, this voltage difference (makes its table be Δ V
BE143) promptly become the voltage difference at resistance 132 two ends and and current i
122Have
i
122=Δ V
BE143/ R
132(1) (resistance meter that makes resistance 132 is R to relation
132).
As seen from Figure 1, desired energy gap reference voltage V
Ref(make that its resistance meter is R with resistance 131
131) and two-carrier junction transistor 141 emitter-base bandgap grading ends and base terminal between voltage difference V
BE141Have
V
ref＝V
B141+i
111R
131 (2)
Relation because i
111With i
122Equate,, can be (2) formula table therefore if with (1) formula substitution (2) formula
V
ref＝V
BE141+ΔV
BE143(R
131/R
132) (3)
Because V
BE141With Δ V
BE143All have the characteristic that the increase with temperature changes, its rate of change is about respectively-2mV/ ℃ and+0.2mV/ ℃, therefore via suitable design R
131With R
132Resistance, and make its ratio become 10, then can obtain an energy gap reference voltage V who does not change with the increase of temperature
Ref
Yet above-mentioned energy gap reference circuit but has two following problems:
(1) transistorized passage modulation effect (Channel Length Modulation) causes V
RefCan be with V
DDAnd become:
By finding out among Fig. 1, the voltage of mos field effect transistor 122 drain electrode ends is that the voltage difference by mos field effect transistor 113 source terminals and gate terminal is determined, yet, the voltage of mos field effect transistor 121 drain electrode ends but is by the common decision of the institute of the voltage difference between the voltage difference of source terminal own and gate terminal and two-carrier junction transistor 142 emitter-base bandgap grading ends and base terminal, this difference is that an electric current shines upon asymmetric factor for mos field effect transistor 112 and 113 current mirrors that constituted, and has also caused V
RefCan be with V
DDAnd the shortcoming that changes.
(2) transistorized leakage current effect (Leakage Effect) causes V during high temperature
RefProduce drift:
In Fig. 1, mos field effect transistor 121 and 122 drain electrode end are for matrix (Substrate), the diode pn that is equivalent to an operated in anti-phase respectively connects face, this pn connects face and produces because the relation of leakage current effect has a leakage current (Leakage Cueernt), this leakage current should be extremely low at low temperature aging, so energy gap reference voltage V
RefStill can show the comparatively desirable state shown in Fig. 2 (a), when high temperature, leakage current can cause i then
121And i
122Increase, the consequence that is mapped to resistance 131 by current mirror then is i
111Increase, cause energy gap reference voltage V
RefProduce the drift phenomenon, shown in Fig. 2 (b).
(3) summary of the invention
Main purpose of the present invention is a kind of energy gap reference circuit of design, not only can produce the difficult energy gap reference voltage that changes with temperature, simultaneously to increase transistor unit and to change the mode of transistorized voltage-operated point, eliminate in the existing energy gap reference circuit because the leakage current effect when transistorized passage modulation effect and high temperature the not good situation of energy gap reference voltage that is caused.
According to conception of the present invention, a kind of energy gap reference circuit is proposed, it comprises: a first transistor, one first end is connected in one first voltage; One first resistance, one end are connected in one second end of this first transistor; One transistor seconds, one first end is connected in the other end of this first resistance, and one second end and control end are connected in one second voltage jointly; One the 3rd transistor, one first end is connected in this first voltage, and its control end is connected in the control end of this first transistor; One the 4th transistor, one first end is connected in this first voltage, and its control end is connected in the 3rd transistorized control end; One the 5th transistor, one first end are connected in the 3rd transistorized one second end, and its control end is connected in the 4th transistorized one second end; One the 6th transistor, one first end and control end are connected in the 5th transistorized control end jointly; One second resistance, one end are connected in the 6th transistorized one second end; One the 7th transistor, one first end are connected in the 5th transistorized one second end, and one second end and control end are connected in this second voltage jointly; One the 8th transistor, one first end is connected in the other end of this second resistance, and one second end and control end are connected in this second voltage jointly; One the 9th transistor, one first end is connected in this first voltage, and one second end and control end are connected in the 4th transistorized control end jointly; The tenth transistor, one first end are connected in the 9th transistorized this second end, and its control end is connected in the 5th transistorized this first end; The 11 transistor, one first end are connected in the tenth transistorized one second end, and one second end and control end are connected in this second voltage jointly; And 1 the tenth two-transistor, one first end and one second end are connected in this second end of this first transistor jointly, and its control end is connected in this second voltage; Utilize this first, the 3rd, the 4th, the 5th and the 6th transistorized coupling, the electric current of feasible this second resistance of flowing through maps to this first resistance, and exports an energy gap reference voltage in this second end junction of this first resistance and this first transistor.
According to above-mentioned conception, wherein this first voltage is greater than this second voltage.
Also have a building-out capacitor according to the described energy gap reference circuit of above-mentioned conception, the one end is connected in the tenth transistorized control end, and its other end is connected in this second voltage.
According to the described energy gap reference circuit of above-mentioned conception, wherein this first, the 3rd, the 4th and the 9th transistor is identical P-type mos field-effect transistor (MOSFET), this first end is all source terminal, and this second end is all drain electrode end, and control end is all gate terminal.
According to above-mentioned conception, wherein the 5th, the 6th, the tenth and the tenth two-transistor is identical N type metal oxide semiconductor field-effect transistor (MOSFET), and this first end is all drain electrode end, and this second end is all source terminal, and control end is all gate terminal.
According to above-mentioned conception, wherein this second, the 7th and the 11 transistor is identical pnp type two-carrier junction transistor (BJT), and this first end is all the emitter-base bandgap grading end, and this second end is all collector terminal, and control end is all base terminal.
According to above-mentioned conception, wherein the 8th transistor is a pnp type two-carrier junction transistor, and this first end is the emitter-base bandgap grading end, and this second end is a collector terminal, and control end is all base terminal.
According to above-mentioned conception, wherein the 8th transistorized pn connects the face area and connects the integral multiple of face area for this second, the 7th and the 11 transistorized pn, and is at least 2 times.
According to above-mentioned conception, wherein the 8th transistor is to be coupled by at least 2 pnp type two-carrier junction transistors identical with this second, the 7th and the 11 transistor to form.
The present invention is by following accompanying drawing and detailed description and can obtain a more deep understanding:
(4) description of drawings
Fig. 1 is the circuit diagram of existing energy gap reference circuit;
The energy gap reference voltage of Fig. 2 (a) when being low temperature is to the graph of a relation of variations in temperature;
The energy gap reference voltage of Fig. 2 (b) when being high temperature is to the graph of a relation of variations in temperature;
Fig. 3 is the circuit diagram of energy gap reference circuit of the present invention.
(5) embodiment
Energy gap reference circuit one preferable enforcement sample attitude of the present invention as shown in Figure 3, it is by identical P-type mos field-effect transistor 311,312,313 and 314, identical N type metal oxide semiconductor field-effect transistor 321,322,323 and 324, identical pnp type two-carrier junction transistor 331,332 and 334, resistance 34 and 35, and electric capacity 36 couples mutually and forms, and is the integral multiple of pnp type two-carrier junction transistor 331,332 and 334 and is at least 2 times and the pn of pnp type two-carrier junction transistor 333 connects the face area.Wherein P-type mos field-effect transistor 311,312,313 and 314 source terminal all are connected to high voltage V
DDAnd the gate terminal of P-type mos field-effect transistor 311, the gate terminal of P-type mos field-effect transistor 312, the gate terminal of the gate terminal of P-type mos field-effect transistor 313 and P-type mos field-effect transistor 314 and drain electrode end also all are connected to each other together, the source terminal of N type metal oxide semiconductor field-effect transistor 321 and drain electrode end are connected to the drain electrode end of P-type mos field-effect transistor 311, gate terminal then is connected to earth terminal, one end of resistance 34 is connected to the drain electrode end of P-type mos field-effect transistor 311, the other end then is connected to the emitter-base bandgap grading end of pnp type two-carrier junction transistor 331, and the base terminal and the collector terminal of pnp type two-carrier junction transistor 331 are connected to earth terminal jointly.In addition, the drain electrode end of P-type mos field-effect transistor 312 is connected to the drain electrode end of N type metal oxide semiconductor field-effect transistor 322, the gate terminal and the drain electrode end of the drain electrode end of P-type mos field-effect transistor 313 and N type metal oxide semiconductor field-effect transistor 323 are connected to each other together, the gate terminal of N type metal oxide semiconductor field-effect transistor 322 then links together with the gate terminal of N type metal oxide semiconductor field-effect transistor 323, the source terminal of N type metal oxide semiconductor field-effect transistor 322 then links together with the emitter-base bandgap grading end of pnp type two-carrier junction transistor 332, and after an end of resistance 35 is connected to the source terminal of N type metal oxide semiconductor field-effect transistor 323, the other end then interconnects with the emitter-base bandgap grading end of pnp type two-carrier junction transistor 333, and pnp type two-carrier junction transistor 332 and 333 base terminal and collector terminal then are connected to earth terminal jointly.At last, the drain electrode end, source terminal that drain electrode end, the gate terminal that the drain electrode end of N type metal oxide semiconductor field-effect transistor 324 is connected to P-type mos field-effect transistor 314 is connected to P-type mos field-effect transistor 312 then interconnects with the emitter-base bandgap grading end of pnp type two-carrier junction transistor 334, and the base terminal of pnp type two-carrier junction transistor 334 and collector terminal are connected to earth terminal jointly, are connected on as for 36 of building-out capacitors between the gate terminal and earth terminal of N type metal oxide semiconductor field-effect transistor 324.
At first,, mos field effect transistor 311,312,313,314,321,322,323 and 324 couples because being modes with current mirror, so current i
311, i
312, i
313, i
314, i
322, i
323And i
324Be all identical, and the pn of two-carrier junction transistor 333 connects the face area greater than two-carrier junction transistor 331 and 332, though therefore the voltage difference between two-carrier junction transistor 331 and 332 emitter-base bandgap grading ends and the base terminal is equal to each other, but all greater than the emitter-base bandgap grading end of two-carrier junction transistor 333 and the voltage difference between the base terminal, this voltage difference (makes its table be Δ V
BE333) promptly become the voltage difference at resistance 35 two ends, and have with current i 323
i
323=Δ V
BE333/ R
35(4) (resistance meter that makes resistance 35 is R to relation
35).
As seen from Figure 3, desired energy gap reference voltage V
Ref(make that its resistance meter is R with resistance 34
34) and two-carrier junction transistor 331 emitter-base bandgap grading ends and base terminal between voltage difference V
BE331Have
V
Ref=V
BE331+ i
311R
34(5) relation is because i
311With i
323Equate,, can be (5) formula table therefore if with (4) formula substitution (5) formula
V
ref＝V
BE331+ΔV
BE333(R
34/R
35) (6)
Because V
BE331With Δ V
BE333All have the characteristic that the increase with temperature changes, its rate of change is about respectively-2mV/ ℃ and+0.2mV/ ℃, therefore via suitable design R
34With R
35Resistance, and make its ratio become 10, then can obtain an energy gap reference voltage V who does not change with the increase of temperature
RefTherefore, by the energy gap reference circuit of circuit arrangement mode of the present invention, has the effect that produces the energy gap reference voltage equally with prior art.
In addition, by finding out among Fig. 3, the voltage of mos field effect transistor 323 drain electrode ends is the voltage differences by mos field effect transistor 322 source terminals and gate terminal, and the summation of the voltage difference between two-carrier junction transistor 332 emitter-base bandgap grading ends and base terminal determines.Then, because the existence of mos field effect transistor 324 and two-carrier junction transistor 334, make that the voltage of mos field effect transistor 322 drain electrode ends is the voltage differences by mos field effect transistor 324 source terminals and gate terminal, and the summation of the voltage difference between two-carrier junction transistor 334 emitter-base bandgap grading ends and base terminal determines; But because i
312, i
314,i
322And i
324Be all identical, and mos field effect transistor 322 and 324, and two-carrier junction transistor 332 and 334 also is all components identical each other, therefore mos field effect transistor 324 source terminals are identical with the voltage difference of mos field effect transistor 322 source terminals and gate terminal with the voltage difference of gate terminal, and two-carrier junction transistor 334 emitter-base bandgap grading ends with voltage difference between base terminal are and two-carrier junction transistor 332 emitter-base bandgap grading ends and base terminal between voltage difference identical, like this, the voltage of mos field effect transistor 322 drain electrode ends also can be regarded the voltage difference by mos field effect transistor 322 source terminals and gate terminal as, and the summation of the voltage difference between two-carrier junction transistor 332 emitter-base bandgap grading ends and base terminal determines.Therefore, energy gap reference circuit by circuit arrangement mode of the present invention, wherein the voltage-operated point of the voltage-operated point of mos field effect transistor 322 drain electrode ends and mos field effect transistor 323 drain electrode ends is identical, so can eliminate in the existing energy gap reference circuit, cause V because of transistorized passage modulation effect
RefCan be with V
DDAnd the not good situation that becomes.
At last, by finding out among Fig. 3, mos field effect transistor 322 and 323 drain electrode end are for matrix, the diode pn that is equivalent to an operated in anti-phase respectively connects face, this pn connects face because the relation of leakage current effect has a leakage current generating, and this leakage current can cause i when high temperature
322And i
323Increase, the consequence that is mapped to resistance 131 by current mirror then is i
311Increase; Yet design of the present invention is but at V
RefOutput connected a, source terminal 322 and 323 identical and drain electrode end connects altogether, gate terminal is connected in earth terminal mos field effect transistor 321 with mos field effect transistor more, therefore at V
RefOutput also can produce one and mos field effect transistor 322 and 323 identical leakage currents, offset i when high temperature
322And i
323Increase.Therefore, cause V because of transistorized leakage current effect in the time of high temperature can being eliminated by the energy gap reference circuit of circuit arrangement mode of the present invention
RefThe phenomenon that produces drift produces.
In sum, energy-gap reference circuit of the present invention not only has the generation energy equally with prior art as can be known The effect of crack reference voltage, and in the prior art of can preventing because transistorized passage modulation effect with And the leakage current effect during high temperature, the not enough stable shortcoming of energy gap reference voltage takes place.
Claims (9)
1. energy gap reference circuit, it comprises:
One the first transistor, one first end is connected in one first voltage;
One first resistance, one end are connected in one second end of this first transistor;
One transistor seconds, one first end is connected in the other end of this first resistance, and one second end and control end are connected in one second voltage jointly;
One the 3rd transistor, one first end is connected in this first voltage, and its control end is connected in the control end of this first transistor;
One the 4th transistor, one first end is connected in this first voltage, and its control end is connected in the 3rd transistorized control end;
One the 5th transistor, one first end are connected in the 3rd transistorized one second end, and its control end is connected in the 4th transistorized one second end;
One the 6th transistor, one first end and control end are connected in the 5th transistorized control end jointly;
One second resistance, one end are connected in the 6th transistorized one second end;
One the 7th transistor, one first end are connected in the 5th transistorized one second end, and one second end and control end are connected in this second voltage jointly;
One the 8th transistor, one first end is connected in the other end of this second resistance, and one second end and control end are connected in this second voltage jointly;
One the 9th transistor, one first end is connected in this first voltage, and one second end and control end are connected in the 4th transistorized control end jointly;
The tenth transistor, one first end are connected in the 9th transistorized this second end, and its control end is connected in the 5th transistorized this first end;
The 11 transistor, one first end are connected in the tenth transistorized one second end, and one second end and control end are connected in this second voltage jointly; And
The tenth two-transistor, one first end and one second end are connected in this second end of this first transistor jointly, and its control end is connected in this second voltage;
Utilize this first, the 3rd, the 4th, the 5th and the 6th transistorized coupling, the electric current of feasible this second resistance of flowing through maps to this first resistance, and exports an energy gap reference voltage in this second end junction of this first resistance and this first transistor.
2. energy gap reference circuit as claimed in claim 1 is characterized in that, this first voltage is greater than this second voltage.
3. energy gap reference circuit as claimed in claim 1 is characterized in that, also has a building-out capacitor, and the one end is connected in the tenth transistorized control end, and its other end is connected in this second voltage.
4. energy gap reference circuit as claimed in claim 1, it is characterized in that this first, the 3rd, the 4th and the 9th transistor is identical P-type mos field-effect transistor, this first end is all source terminal, this second end is all drain electrode end, and control end is all gate terminal.
5. energy gap reference circuit as claimed in claim 1, it is characterized in that the 5th, the 6th, the tenth and the tenth two-transistor is identical N type metal oxide semiconductor field-effect transistor, this first end is all drain electrode end, this second end is all source terminal, and control end is all gate terminal.
6. energy gap reference circuit as claimed in claim 1 is characterized in that, this second, the 7th and the 11 transistor is identical pnp type two-carrier junction transistor, and this first end is all the emitter-base bandgap grading end, and this second end is all collector terminal, and control end is all base terminal.
7. energy gap reference circuit as claimed in claim 1 is characterized in that, the 8th transistor is a pnp type two-carrier junction transistor, and this first end is the emitter-base bandgap grading end, and this second end is a collector terminal, and control end is all base terminal.
8. energy gap reference circuit as claimed in claim 7 is characterized in that, the 8th transistorized pn connects the face area and connects the integral multiple of face area for this second, the 7th and the 11 transistorized pn, and is at least 2 times.
9. energy gap reference circuit as claimed in claim 7 is characterized in that, the 8th transistor is to be coupled by at least 2 pnp type two-carrier junction transistors identical with this second, the 7th and the 11 transistor to form.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031424260A CN1300934C (en) | 2003-06-06 | 2003-06-06 | Energy gap reference circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031424260A CN1300934C (en) | 2003-06-06 | 2003-06-06 | Energy gap reference circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1553567A CN1553567A (en) | 2004-12-08 |
| CN1300934C true CN1300934C (en) | 2007-02-14 |
Family
ID=34324008
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB031424260A Expired - Fee Related CN1300934C (en) | 2003-06-06 | 2003-06-06 | Energy gap reference circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1300934C (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1896900B (en) * | 2005-07-13 | 2010-10-06 | 辉达公司 | Energy-level reference circuit |
| CN103123512B (en) * | 2011-11-21 | 2015-03-25 | 联芯科技有限公司 | Band-gap reference circuit |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4472675A (en) * | 1981-11-06 | 1984-09-18 | Mitsubishi Denki Kabushiki Kaisha | Reference voltage generating circuit |
| US4896094A (en) * | 1989-06-30 | 1990-01-23 | Motorola, Inc. | Bandgap reference circuit with improved output reference voltage |
| US5245273A (en) * | 1991-10-30 | 1993-09-14 | Motorola, Inc. | Bandgap voltage reference circuit |
-
2003
- 2003-06-06 CN CNB031424260A patent/CN1300934C/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4472675A (en) * | 1981-11-06 | 1984-09-18 | Mitsubishi Denki Kabushiki Kaisha | Reference voltage generating circuit |
| US4896094A (en) * | 1989-06-30 | 1990-01-23 | Motorola, Inc. | Bandgap reference circuit with improved output reference voltage |
| US5245273A (en) * | 1991-10-30 | 1993-09-14 | Motorola, Inc. | Bandgap voltage reference circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1553567A (en) | 2004-12-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR0139873B1 (en) | Semiconductor integrated circuit device | |
| CN1090775C (en) | Circuit for generation internal supply voltage | |
| CN104079282B (en) | Depletion MOS's EFT Drive Unit | |
| CN1061864A (en) | Reference voltage generating circuit of semiconductor memory device | |
| CN1136730A (en) | Reference voltage semiconductor device | |
| CN1099715C (en) | Surface voltage-resistant layer of semiconductor device for floating voltage end | |
| CN1252815C (en) | Electrostatic discharge protection element | |
| CN1577204A (en) | Folded cascode bandgap reference voltage circuit | |
| CN101047336A (en) | Cascode circuit and semiconductor device | |
| CN1893247A (en) | Multi-power supply circuit and multi-power supply method | |
| CN103578406B (en) | LED screen shows constant-current drive circuit in high precision | |
| US4825018A (en) | Voltage detection circuit | |
| CN112332663A (en) | Voltage compensation circuit of fly-wheel diode | |
| CN1300934C (en) | Energy gap reference circuit | |
| CN1254916C (en) | Semiconductor integrated circuit device | |
| US11698404B2 (en) | Universal switching platform and method for testing dynamic characteristics of a device | |
| Moench et al. | Asymmetrical substrate-biasing effects at up to 350V operation of symmetrical monolithic normally-off GaN-on-Si half-bridges | |
| CN1196265C (en) | Reference voltage circuit | |
| CN1949122A (en) | Design method of current source | |
| CN1081841C (en) | Constant current circuit with small output current fluctuation | |
| CN108599544A (en) | High pressure applied to DC-DC converter enables circuit | |
| CN101046698A (en) | Reference supply voltage circuit using more than two reference supply voltages | |
| CN101452953B (en) | Constant current source device and manufacturing method | |
| CN1731308A (en) | An ultra-low operating voltage energy gap reference voltage source | |
| CN1043829A (en) | High voltage withstanding fet power crystalline solids assembly |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20070214 Termination date: 20130606 |