CN1293608C - Semiconductor device and manufacturing method and a plasma processing apparatus - Google Patents

Semiconductor device and manufacturing method and a plasma processing apparatus Download PDF

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CN1293608C
CN1293608C CNB2003101013852A CN200310101385A CN1293608C CN 1293608 C CN1293608 C CN 1293608C CN B2003101013852 A CNB2003101013852 A CN B2003101013852A CN 200310101385 A CN200310101385 A CN 200310101385A CN 1293608 C CN1293608 C CN 1293608C
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substrate
gas
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electrode
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CN1497677A (en
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宫崎笃
波多野晃继
酒井道
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夏普株式会社
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Abstract

本发明涉及半导体器件及其制造方法以及等离子加工装置。 The present invention relates to a semiconductor device and a manufacturing method and a plasma processing apparatus. 在被处理基板(4)上实施等离子处理的等离子加工装置具备在内部装载被处理基板(4)的处理室(5);在处理室(5)内导入气体的气体导入口(6);设置在处理室(5)内的等离子放电发生单元(15),等离子放电发生单元(15)具有第1电极(2a)和比第1电极(2a)更接近被处理基板(4)设置的第2电极(2b),第1电极(2a)以及第2电极(2b)起到只有从被处理基板(4)的法线方向能够识别的面成为等离子放电面的作用,由此,即使在低的被处理基板温度下,也能够实现高品质膜,能够以高气体离解效率进行成膜。 Inlet gas is introduced in (5) the process chamber gas (6);; being provided with processed substrate (4), implemented on the plasma processing the plasma processing apparatus loaded inside substrate to be processed (4) a process chamber (5) provided in the process chamber of the ion (5) in the other discharge generation unit (15), plasma discharge generation unit (15) having a first electrode (2a) and the ratio of the first electrode (2a) is closer to the second is (4) provided for processing a substrate electrode (2b), a first electrode (2a) and the second electrode (2b) functions can be identified only from the normal direction of the substrate to be treated (4) and so on become plasma surface discharge surface, whereby, even at low the substrate to be processed temperature, it is possible to achieve high-quality film forming can be performed at a high efficiency gas dissociation.

Description

半导体器件及其制造方法以及等离子加工装置 Semiconductor device and manufacturing method and a plasma processing apparatus

技术领域 FIELD

本发明涉及具有功能性的电子器件以及电子器件的制造方法。 The present invention relates to a method of manufacturing an electronic device and an electronic device having functionality. 更详细地讲,本发明涉及由半导体膜、有机膜及绝缘膜等构成的电子器件以及这种电子器件的制造方法。 More specifically, the present invention relates to an electronic device and a method of manufacturing an electronic device composed of a semiconductor film, an organic film and insulating film. 另外,本发明涉及用于形成半导体或者导体等薄膜的等离子加工装置。 Further, the present invention relates to a semiconductor or conductor film and the like for forming a plasma processing apparatus. 更详细地讲,涉及用于制造半导体膜或者绝缘膜的薄膜的基于等离子激励化学气相沉积法的等离子化学蒸镀装置,进行用于半导体膜或者导体膜的薄膜图形形成的干法腐蚀的干法腐蚀装置,去除在薄膜图形形成中使用的抗蚀剂的前驱装置等的等离子加工装置。 More specifically, it relates to a film for manufacturing a semiconductor film or an insulating film based on the plasma-excited plasma chemical vapor deposition apparatus a chemical vapor deposition method and the like, dry-etching a thin film pattern for a semiconductor film or a conductor film formed by dry etching apparatus, plasma processing apparatus precursor removal apparatus used in the resist pattern formed in the thin film and the like.

背景技术 Background technique

使用等离子成膜半导体膜等,制造集成电路、液晶显示器、有机场致发光元件、太阳能电池等电子器件的方法,即等离子激励化学气相沉积(Chemical Vapor Deposition CVD)法由于其方便性或者操作性出色,因此在制造各种电子器件中使用。 Forming a semiconductor film using a plasma, fabrication of integrated circuits, liquid crystal displays, organic electroluminescent element airport methods, electronic devices such as solar cells, i.e., the plasma excited chemical vapor deposition (Chemical Vapor Deposition CVD) method because of its excellent operability or convenience Therefore in the manufacture of various electronic devices.

作为使用等离子CVD法的装置的形态(等离子化学蒸镀装置,以下称为等离子CVD装置。),一般是图33以及图34所示的形态。 The form of the plasma CVD method using the apparatus (plasma chemical vapor deposition apparatus, hereinafter referred to as a plasma CVD apparatus.), Typically be in the form shown in FIG. 33 and FIG. 34. 参照图33以及图34,说明等离子CVD装置。 Referring to FIG. 33 and FIG. 34, described plasma CVD apparatus. 图33是以往的等离子CVD装置的概略图,图34是模式地示出以往的等离子CVD装置的剖面图。 FIG 33 is a schematic view of a conventional plasma CVD apparatus, FIG. 34 is a schematic cross-sectional view illustrating a conventional plasma CVD apparatus. 等离子CVD装置具有使用处理室(真空容器)5构成的闭空间和在其中间相互电绝缘并且平行地设置在相对位置的两片导体板构成的电极2a、2b。 Using the plasma CVD apparatus having a process chamber (vacuum vessel) 5 and the closed space formed therein and electrically insulated from one another electrode disposed in opposite positions two conductor plates constituted 2a, 2b in parallel. 使得在两片电极2a、2b之间发生等离子11,在其中流过材料气体,使气体分解、离解。 11 such that, in the material gas to flow therethrough, the gas decomposition, dissociated two electrodes 2a, 2b between the plasma. 在安装于一方的电极2b上的由硅或者玻璃等构成的被处理基板4的上面成膜半导体膜等。 The upper electrode 2b is attached to one silicon or glass constituting the substrate to be processed above the forming of the semiconductor film 4.

作为发生用于分解成膜用的材料气体的等离子11的方法,一般使用频率13.56MHz的高频电能。 As a method for decomposing the film forming gas generating material used in the plasma 11, typically 13.56MHz frequency of high frequency power. 一方的导体板电极2b作为接地电位,在相对的另一方电极2a上加入电压,使得在两个电极2a、2b之间发生电场,通过其绝缘破坏现象,作为辉光放电现象生成等离子11。 One electrode conductor plate 2b as a ground potential, the voltage added to the other of the opposing electrode 2a, so that the two electrodes 2a, 2b between the field, through the insulation damage phenomena, as the glow discharge plasma is generated phenomena 11. 把加入电压一侧的电极2a,即施加电能的电极2a称为阴电极或者放电电极。 The added voltage side electrodes 2a, 2a of the electrode i.e., power is applied is called a cathode electrode or discharging electrode. 由于在阴电极2a附近形成很大的电场,因此用其电场加速的等离子11中的电子促进材料气体的离解生成基(radical)。 Since a large electric field formed in the vicinity of the cathode electrode 2a, so that the electric field with other electronic promoting material accelerated dissociation of the gas generating group (Radical) ion 11. 图34中的12示出基的流动。 Figure 34 shows the flow of group 12.

把阴电极2a附近的形成大电场的放电11的部分称为阴极复盖部分。 The portion 11 is formed in the vicinity of a large electric field to discharge as the cathode 2a cathode electrode covering portion. 在阴极复盖部分或者其附近生成的基扩散到接地电位的电极2b上的被处理基板4,沉积在基板4的表面上生长膜。 On the substrate to be processed at the cathode electrode 2b covering portion or the vicinity thereof to generate diffusion to the ground potential of the base 4, is deposited on the surface of the substrate 4 is grown film. 把位于接地电位的电极2b称为阳电极2b。 The electrodes 2b are referred to the ground potential anode electrode 2b. 阳电极2b的附近也形成某种程度大小的电场,把该部分称为阳极复盖部分。 2b near the anode electrode is also formed to some extent the size of the electric field, the portion of the cover portion called the anode. 这样,在相互平行的两个电极2a、2b之间生成等离子,以下把在阳电极2b上的被处理基板4上成膜的装置称为“平行平板型装置”。 Thus, the two mutually parallel electrodes 2a, 2b to generate plasma between, to be processed on the anode electrode 4 on the film formation apparatus 2b of the substrate is called "parallel plate type device."

这种等离子CVD法在各种产业中制作的电子器件中广泛使用。 This plasma CVD method in the production of various industrial electronic devices are widely used. 例如,在有源驱动型的液晶显示器的制造工艺中,制作被称为TFT(薄膜晶体管)的开关元件。 For example, the active driving type liquid crystal display manufacturing process, the production is called TFT (thin film transistor) of the switching element. 在TFT内,作为其构成部分,非晶硅膜或者氮化硅膜等栅极绝缘膜起到重要的作用。 In the TFT, as its components, an amorphous silicon film or a silicon nitride film, a gate insulating film plays an important role. 为了使各个膜起到其作用,高效地成膜高品质的透明绝缘膜的技术是不可缺少的。 In order to perform its function of each film, efficiently forming a high quality art transparent insulating film is indispensable. 另外,例如,为了制作有机场致发光元件,在成膜了有机薄膜以后,作为保护暴露在大气中的表面的保护膜,高效地成膜高品质的透明绝缘膜的技术是不可缺少的。 Further, for example, in order to produce organic electroluminescent element, an organic thin film after the film formation, as a protective film for protecting a surface exposed to the atmosphere, the film forming technique effectively transparent insulating film of high quality is indispensable. 进而,例如为了制作太阳能电池,在成膜了太阳能电池层以后,作为保护暴露在大气中的表面的保护膜,高效地成膜高品质膜的技术是不可缺少的。 Furthermore, for example, in order to produce a solar cell, the solar cell layer after the film formation, as a protective film for protecting a surface exposed in the air, and efficiently high quality film deposition technology is indispensable. 这样制作的电子器件当前正在广泛地使用。 Such production of electronic devices currently in widespread use.

已知,把材料气体变更为腐蚀气体,与等离子CVD装置相同地发生等离子11,进行薄膜的腐蚀的干法腐蚀装置或者进行抗蚀剂去除的前驱装置也统称为等离子加工装置。 It is known, the material gas was changed to an etching gas, and a plasma CVD apparatus, plasma 11 occurs in the same manner, the device for the precursor film etching or dry etching the resist removing apparatus is also referred to as the plasma processing apparatus. 等离子11的发生方法或者基的生成等与等离子CVD装置的机理相同,到达了被处理基板4的基进行薄膜等的去除。 Etc. The method of the same mechanism occurs or to generate other ionic group 11 and the plasma CVD apparatus, the substrate to be processed reaches the removal of the substrate 4 like a thin film. 干法腐蚀装置或者前驱装置与等离子CVD装置的不同之点只是在于不仅存在基,还在其腐蚀动作中利用基于等离子的离子冲击的物理溅射或者向被处理基板4的能量入射这一点。 Different point of the dry etching apparatus or a plasma CVD precursors device only in that the apparatus is not only the base, which also ion etching operation using a plasma-based sputtering or physical shock energy to the substrate 4 of this incident.

在以往确立的等离子CVD装置中具有界限,在制作液晶显示器或者非晶形太阳能电池等大面积电子器件时,在向被处理基板4进行成膜时,有时难以充分地进行材料气体的离解而获得高品质的薄膜。 Having boundaries plasma CVD apparatus conventionally established, when the production of liquid crystal display or amorphous solar cells and other large-area electronic device, at the time of film formation to the substrate 4, may be difficult to dissociate the material gas is sufficiently obtain high quality films. 例如,在以往已知的平行平板型装置中,有时材料气体的离解不充分。 For example, in the conventional parallel plate type apparatus known in the dissociated material gas may be insufficient. 在成膜氮化硅膜的情况下,作为材料气体使用硅烷(SiH4),氨(NH3),氮(N2),氢(H2)等,分解氨进行氮向膜的供给。 In the case of forming the silicon nitride film using silane (SiH4) as a material gas, ammonia (NH3), nitrogen (N2 of), hydrogen (H2) and the like, decomposition of ammonia nitrogen is supplied to the film. 但是,例如如果要在铜布线上成膜氮化硅膜,则氨气体有可能使铜腐蚀。 However, if, for example, to forming copper wiring on a silicon nitride film, the ammonia gas has the potential to copper corrosion.

另外,氨是化学活性强的气体,有时希望不使用氨,而仅用氮气成膜氮化硅膜。 Further, ammonia gas is chemically active and strong, it is sometimes desirable not to use ammonia, nitrogen and only the silicon nitride film deposition. 这种情况下,在平行平板型装置中,不能够充分地分解难以离解的氢气或者氮气,难以得到绝缘膜性或者保护膜性出色的氮化硅膜。 In this case, the parallel plate type apparatus can not be sufficiently difficult to decompose hydrogen or nitrogen dissociation, it is difficult to obtain an insulating film or a protective film excellent in properties of the silicon nitride film. 或者,在成膜非晶硅膜时,作为材料气体使用硅烷、氢等,而气体的利用效率限于10%左右。 Alternatively, when forming an amorphous silicon film using silane and hydrogen as material gas, and the gas utilization efficiency is limited to about 10%. 这种情况下,在平行平板型装置中可以说也不能够充分地促进材料气体的离解。 In this case, the parallel-plate type device can be said to not be sufficiently promote the dissociation of the material gas.

向被处理基板4成膜高品质膜的技术公开在以下说明的各个文献等中。 4 to the technical processing of high-quality film forming substrate disclosed in the following description of various documents and the like.

例如,在特开平11-144892号公报中公开的等离子装置中,由多个电极构成与玻璃基板相对的放电电极,各个电极配置成加入相互不同极性的高频电压,使得发生横方向的放电。 For example, in the plasma apparatus disclosed in Japanese Unexamined Patent Publication No. 11-144892, a plurality of electrodes of the glass substrate opposite to the discharge electrode, a high frequency voltage to the respective electrodes arranged mutually different polarities is added, so that the lateral discharge direction is generated . 反应气体从电极与电极中间放出。 The reaction gas discharged from the intermediate electrode and the electrode. 放出到横电场的放电等离子中的气体产生了等离子反应以后,沿着玻璃基板一侧的方向扩散,沉积在玻璃基板上。 After discharged to the discharge gas ion is the transverse electric field is generated like a plasma reactor, the glass substrate side in the direction of diffusion, deposited on a glass substrate. 由此,能够在玻璃基板上不产生放电损伤,进行高品质的成膜。 Accordingly, without causing discharge damage on the glass substrate, high-quality film. 但是,在该等离子装置中,也与平行平板型装置相同,不能够促进材料气体的离解。 However, in the plasma apparatus, and also the same parallel plate apparatus can not promote the dissociation of the material gas.

促进材料气体的离解的技术例如公开在特开平1-279761号公报中。 Technology for the dissociation of the material gas is disclosed, for example, in the JP 1-279761. 在特开平1-279761号公报中公开的等离子装置中,在阴电极中设置凹形空间,根据空心阴极效果提高等离子密度。 In the plasma apparatus disclosed in JP-A-1-279761, a cathode electrode disposed in the concave space, according to the hollow cathode effect of improving the plasma density. 由此,促进材料气体的离解,与通常的平行平板型装置相比较,可以得到高速的成膜速度。 Accordingly, to promote the dissociation of the material gas, as compared with the conventional parallel plate type apparatus, a high-speed film deposition rate can be obtained. 但是,在该装置中,由于被处理基板的表面暴晒在等离子中,因此成膜面受到等离子损伤。 However, in this apparatus, since the exposure of the surface-treated substrate plasma, thus forming the surface damaged by the plasma.

通过把被处理基板4的设定温度取为300℃以上,能够用热能修复这样的等离子损伤。 Set by the temperature of the substrate to be processed is taken as 4 or more 300 ℃, to repair such damage by plasma thermal energy. 但是,在希望把被处理基板4设定在200℃左右或者其以下温度的情况下,不能够维持良好的膜质。 However, the desired substrate to be processed is set at about 200 ℃ 4, or the case where the temperature, good film quality can not be maintained. 即,用等离子CVD装置,还不能够在特别低的被处理基板温度下,确立实现高品质膜,用很高的气体离解效率进行成膜的方法。 That is, by plasma CVD apparatus, not able to be processed at extremely low substrate temperature, high-quality film is established, the film formation method using a gas dissociation efficiency high.

假设在干法腐蚀装置或者前驱装置中应用了特开平11-144892号公报中记载的等离子装置的结构的情况。 Suppose a case where the structure of the application of the plasma apparatus JP 11-144892 discloses a dry etching apparatus in the precursor or the apparatus. 这种情况下,能够分别控制等离子发生单元和离子冲击控制单元。 In this case, it is possible to control ion generation units, respectively, and the control unit the ion impact. 即,把第3电极安装在基板4的后面,能够与等离子发生相互独立,进行离子冲击的控制,能够提高参数的控制性。 That is, the third electrode is mounted at the back of the substrate 4, can be independently of each other with the plasma generating, controlling ion bombardment, it is possible to improve the controllability of the parameters.

但是,这种情况下也不能够促进处理气体的离解,不能够把处理速度提高到某个一定值以上。 However, in this case not to promote dissociation of the process gas is not able to increase the processing speed above a certain value. 即,总之,不能够确立以高性能以及很高的气体离解效率进行动作的等离子加工装置。 That is, in short, can not establish the plasma processing device with high performance and high gas dissociation efficiency of operation.

至今为止,用以上那样的技术成膜的薄膜作为器件用不能够得到充分的保护膜特性。 So far, film forming technique described above is used as a device can not be fully protected film properties. 例如,在有机场致发光元件中,为了防止大气中的水蒸汽或者氧的侵入,需要在元件的外层设置透明绝缘性的保护膜。 For example, in the airport electroluminescent element in order to prevent water vapor in the atmosphere or the intrusion of oxygen, it requires a transparent insulating protective film in the outer element. 元件内的有机膜由于在100℃以上的加工温度中,特性大幅度地恶化,因此需要在该温度以下形成保护膜。 Since the organic film in the element at processing temperatures above 100 ℃, the characteristics are considerably deteriorated, thus requiring protective film is formed below this temperature.

但是,在以往的等离子CVD装置中,在那样的温度条件下不能够形成质量良好的保护膜。 However, in the conventional plasma CVD apparatus can not be of good quality protective film is formed under the temperature condition as. 例如,在应用物理通讯第65卷第2229页到第2231页(Applied Physics Letters,volume 65,pages 2229-2231)中,报告了作为保护膜用100℃形成了氮化硅膜时,由于膜质恶化,因此大气中的水蒸汽侵入到膜内,产生硅与氧的结合。 For example, in Applied Physics Letters volume 65 pages of 2229 to 2231 (Applied Physics Letters, volume 65, pages 2229-2231), the reported as the protective film 100 is formed with a silicon nitride film deg.] C, since the membranous deteriorate, so the water vapor in the atmosphere enters the film, create a bond of silicon and oxygen. 根据该报告,可以设想水蒸汽或者氧终究透过膜。 According to the report, it is contemplated that the oxygen or water vapor permeable membrane after all. 在当前的状况下,实际的情况是由于仅能够实现品质差的保护膜,因此为了与大气的隔离,用氮气密封管底用的玻璃基板。 In the current situation, the reality is only possible due to the poor quality of the protective film, so in order to isolate from the atmosphere with nitrogen, sealed with a glass substrate tube bottom. 作为把氮化硅膜使用为保护膜的器件,有多晶硅太阳能电池或者镓·砷族电子器件,关于这些器件也存在着上述举出的品质上的课题。 The silicon nitride film used as a protective device for the film, the polycrystalline silicon solar cell or a group of gallium arsenide electronic devices, there are devices on the quality problems mentioned above.

本发明是鉴于以上各点而产生的,其主要目的在于通过促进基于等离子的气体的分解以及离解,提高等离子处理的精度,提高所制造的电子器件的品质。 The present invention is made in view of the above points is generated, its main purpose is based on the decomposition of the plasma by promoting the dissociation of gas and improve the accuracy of the plasma processing, improve the quality of the manufactured electronic devices.

发明内容 SUMMARY

本发明的等离子加工装置是在被处理基板上实施等离子处理的等离子加工装置,具有:在内部载置了上述被处理基板的处理室;在上述处理室内导入气体的气体导入口;设置在上述处理室内的等离子放电发生单元,上述等离子放电发生单元具有阴极电极和比上述阴极电极更接近上述被处理基板设置的阳极电极,上述阴极电极以及上述阳极电极被设置在上述被处理基板的同一侧,并且只有从上述被处理基板的法线方向能够识别的面起到作为等离子放电面的作用。 The plasma processing apparatus of the present invention is implemented on a substrate to be processed, plasma processing the plasma processing apparatus, comprising: internally mounted above the process chamber for processing a substrate; a gas introducing a gas in the processing chamber inlet; disposed in the processing chamber plasma discharge generating means, the plasma discharge occurring cell having a cathode electrode and the same side of the anode electrode substrate placing, said cathode electrode and said anode electrode is provided on the substrate to be processed is closer than the cathode electrode, and only functions as a plasma discharge and the like from the face of the surface to be treated can be identified by the substrate normal.

另外,本发明的等离子加工装置是在被处理基板上实施等离子处理的等离子加工装置,具有:在内部载置了上述被处理基板的处理室;在上述处理室内导入气体的气体导入口;设置在上述处理室内的等离子放电发生单元,上述等离子放电发生单元具有阴极电极、形成在上述阴极电极中的在上述被处理基板侧之电极面的一部分上的绝缘层和形成在上述绝缘层上的阳极电极。 Further, plasma processing apparatus according to the present invention, like a plasma processing apparatus according to the like on a substrate to be processed plasma processing, comprising: internally mounted above the process chamber for processing a substrate; a gas introducing a gas in the processing chamber inlet; provided the processing chamber plasma discharge generating means, the plasma discharge occurring cell having a cathode electrode, an anode electrode formed on the cathode electrode in an insulating layer formed on the insulating layer on a portion to be treated electrode surface of the substrate side of the of .

上述气体导入口最好设置在上述阴极电极一侧。 The gas inlet is preferably provided on the cathode electrode side. 另外,上述阴极电极的等离子放电面最好是凹面形状。 Further, the plasma discharge surface of the cathode electrode is preferably a concave shape, and the like. 进而,上述阴极电极的等离子放电面的面积最好比上述阳极电极的等离子放电面的面积大。 Further, the surface area of ​​the plasma discharge and the like cathode electrode is preferably the anode electrode than the ion like discharge surface area is large.

上述等离子放电发生单元最好分别具有多个上述阴极电极的等离子放电面区和上述阳极电极的等离子放电面区。 Said plasma discharge occurs each unit preferably having a surface region of the plasma discharge plasma discharge surface area of ​​the plurality of the cathode electrode and the anode electrode and the like, and the like. 另外,沿着上述被处理基板的一个面的方向交替形成多个上述阴极电极的等离子放电面区和上述阳极电极的等离子放电面区,而且上述阳极电极与上述被处理基板之间的距离最好是相互邻接的上述阳极电极的电极间距离以上。 Further, the direction along the surface of a substrate to be processed are alternately formed in the plasma discharge region surface area a plurality of plasma discharge surface of the cathode electrode and the anode electrode and the like, and the like, and the distance between the anode electrode and the substrate to be processed is preferably the anode electrode is between the electrodes adjacent to each other in distance or more.

进而还具有在上述阴极电极以及上述阳极电极上施加电能的电源,上述电源的频率在100kHz以上300MHz以下是有效的。 Further having a further power supply for applying electrical energy to said cathode electrode and said anode electrode, the power source frequency is above 100kHz 300MHz following are valid.

另外,本发明的电子器件的制造方法是使用具备在内部载置了上述被处理基板的处理室;在上述处理室内导入气体的气体导入口;设置在上述处理室内的等离子放电发生单元的等离子加工装置制造电子器件的方法,所述等离子放电发生单元中具有阴电极、形成在所述阴电极的电极面的一部分上的绝缘层和形成在上述绝缘层上的阳电极,所述阴电极、绝缘层和阳电极位于被处理基板的同一侧,该方法包括在上述处理室的内部载置上述被处理基板的工艺;在载置了上述被处理基板的上述处理室内,从上述气体导入口导入上述气体的工艺;由上述等离子放电发生单元发生等离子放电,在上述被处理基板的表面实施等离子处理的工艺,沿着上述等离子放电的放电路径导入上述气体。 The method for producing an electronic device according to the present invention is the use provided inside the mounting process chamber substrate to be processed; a gas introducing a gas in the processing chamber inlet; setup discharge generating unit in the processing chamber plasma plasma processing a method of manufacturing an electronic device, a plasma discharge cell having a cathode electrode, the formation of the insulating layer on a portion of the electrode surface of the cathode electrode and the anode electrode is formed on the insulating layer, the cathode electrode, the insulating layer and the anode electrode located on the same side of the substrate to be processed, the method comprising the process inside the processing chamber on which said substrate to be processed; the mounting described above is in the processing chamber for processing a substrate, the inlet from the gas introduced into the the process gas; said plasma discharge occurs from the occurrence of plasma discharge cell, in a process like the above-described embodiment the surface of the substrate to be processed in the plasma processing, along a discharge path discharging the gas introduced into the plasma.

另外,本发明的电子器件的制造方法是使用本发明的等离子处理装置制造电子器件的方法,包括在上述处理室的内部载置上述被处理基板的工艺;在载置了上述被处理基板的上述处理室内,从上述气体导入口导入上述气体的工艺;由上述等离子放电发生单元发生等离子放电,在上述被处理基板的表面实施等离子处理的工艺。 The method for producing an electronic device according to the present invention, a plasma method for processing apparatus for producing an electronic device using the present invention, a process inside the processing chamber on which said substrate to be processed; the mounting of the substrate to be processed above processing chamber, introducing the process gas is introduced into the inlet from the gas; discharge means of said plasma generating plasma discharge occurs, like the above-described embodiment of the process the surface of the substrate to be processed plasma treatment.

另外,本发明的电子器件是在绝缘基板上成膜了绝缘膜的电子器件,上述绝缘膜包括硅、氮以及氢,上述绝缘膜内的氢结合量是7×1021cm-3以上。 The electronic device of the present invention is an electronic device forming an insulating film on an insulating substrate, the insulating film comprises silicon, nitrogen and hydrogen, the amount of hydrogen bonding of the insulating film was 7 × 1021cm-3 or more. 上述绝缘膜内的氧结合量实质上最好是0。 Oxygen binding amount of the insulating film is preferably substantially zero. 上述绝缘膜最好形成为外层。 The insulating film is preferably formed as an outer layer. 上述绝缘基板也可以由有机材料形成。 The insulating substrate may be formed of an organic material. 另外,还可以具有有机层。 Further, the organic layer may further have.

另外,本发明的等离子加工装置的上述阴极电极的等离子放电面具有凹形的曲面部分。 Further, the plasma discharge surface of the cathode electrode of the plasma processing apparatus according to the present invention has a concave curved surface portion and the like.

上述阴极电极的等离子放电面和上述阳极电极的等离子放电面最好构成为连续曲面的一部分。 Plasma discharge a plasma discharge side surface of the cathode electrode and the anode electrode and the like, and the like is preferably configured as part of a continuous curved surface.

在上述阴极电极的等离子放电面上还可以形成多个凹入部。 In the cathode electrode of the ion discharge and the like may also form a plurality of recessed surface portions. 进而,最好在至少一部分上述凹入部的底部形成气体导入口。 Further, the gas inlet is preferably formed at least part of the bottom of the concave portion.

还可以喷砂加工上述阴极电极的等离子放电面。 Sandblasting the cathode may also be a plasma discharge electrode surface.

在上述阴极电极上最好设置朝向被处理基板开口的多个凹部。 On the cathode electrode is preferably disposed toward the substrate to be treated a plurality of recesses opening. 进而,上述凹部的开口形状最好是四边形。 Furthermore, the opening shape of the recess portion is preferably quadrangular. 另外,上述凹部的开口形状也可以是圆形。 In addition, the opening shape of the recess may be circular.

另外,本发明的等离子加工装置是具备在内部载置了被处理基板的处理室;在上述处理室的内部导入气体的气体导入口;设置在上述处理室内部的等离子放电发生单元的等离子加工装置,上述等离子放电发生单元具备沿着与上述被处理基板平行的方向呈条状地延伸的多个绝缘部分;至少在相互邻接的上述绝缘部分之间设置的阴极电极;在上述各个绝缘部分的上述被处理基板一侧的端部以与上述阴极电极分离的状态设置的阳极电极。 Further, plasma processing apparatus according to the present invention and the like are provided inside the mounting of the processing chamber for processing a substrate; a gas introducing a gas inside the processing chamber inlet; setup discharge generating unit in the interior of the processing chamber, plasma and other plasma processing apparatus , the plasma discharge along a generating unit includes a plurality of strip-shaped insulating portions extending in the direction parallel to the shape of the above-processed substrate; a cathode electrode adjacent to each other between the insulating portion is provided at least; and said insulating portion of each of the above the anode electrode side end portion of the substrate processed to separate the cathode electrode of the set state.

在上述各个绝缘部分之间设置的各个阴极电极也可以相互分离。 Each cathode electrode disposed between each of the insulating portions may be separated from each other.

另外,本发明的等离子加工装置是具备在内部载置了被处理基板的处理室;在上述处理室的内部导入气体的气体导入口;设置在上述处理室内部,在上述被处理基板上实施等离子处理的等离子放电发生单元的等离子加工装置,上述等离子放电发生单元具备沿着与上述被处理基板平行的方向呈条状地延伸的多个绝缘部分;至少在相互邻接的上述绝缘部分之间设置的阴极电极;在上述各个绝缘部分的上述被处理基板一侧的端部以与上述阴极电极分离的状态设置的阳极电极,在上述阴极电极中形成多个气体导入口,沿着对于上述条状的绝缘部分的长度方向交叉的方向排列设置上述多个气体导入口。 Further, plasma processing apparatus according to the present invention and the like are provided inside the mounting of the processing chamber for processing a substrate; introducing gas from the gas introduction port inside the process chamber; inside the processing chamber embodiment is provided on the substrate to be processed, plasma plasma discharge treatment plasma generation unit processing apparatus, the plasma generating means includes a discharge along a plurality of strip-shaped insulating portions extending in the direction parallel to the shape of the above-described substrate processing; disposed adjacent to each other at least between the insulating portion a cathode electrode; anode electrode of the end portion to be processed to separate the substrate side and the cathode electrode is provided for each state of the insulating portion to form a plurality of gas inlet in the cathode electrode, along a strip of the above-described a direction intersecting the longitudinal direction of the insulating portions are arranged above the plurality of gas inlet.

上述多个气体导入口最好沿着与上述绝缘部分的长度方向正交的方向排列。 Said plurality of gas inlet is preferably arranged in the direction perpendicular to the longitudinal direction of the insulating portion.

上述各个气体导入口还可以构成为沿着相互平行的方向吹出气体。 Above respective gas inlet may be configured to blow gas in a direction parallel to each other.

上述各个气体导入口最好构成为沿着与上述阴极电极的等离子放电面垂直的方向吹出气体。 Each of the above gas inlet is preferably configured to blow gas in a direction the cathode electrode and the ion discharge or the like perpendicular to the plane.

上述各个气体导入口还可以构成为对于被处理基板的法线方向倾斜的方向吹出气体。 Above respective gas inlet may be configured to blow gas to the inclination direction of the normal direction of the substrate processing.

发明的效果如果依据本发明的等离子加工装置,则由于即使在低被处理基板温度下,也能够抑制成膜面的等离子损伤,而且促进基于等离子的气体的分解以及离解,因此能够提高等离子处理的精度,提高所制造的电子器件等的品质。 Advantageous Effects of Invention According to the present invention, a plasma processing apparatus, since even at a low substrate to be processed temperature, can be suppressed ion damage film formation surface and the like, but also promote the decomposition of the gas-based plasma, and dissociation, it is possible to improve the plasma treatment quality and accuracy, improve the manufacturing of electronic devices and the like.

附图说明 BRIEF DESCRIPTION

图1是模式地示出实施形态1的等离子CVD装置的立体图。 1 is a schematic perspective view showing an embodiment of a plasma CVD apparatus.

图2是模式地示出实施形态1的等离子CVD装置的剖面图。 FIG 2 is a schematic illustrating one embodiment of a sectional view of a plasma CVD apparatus or the like.

图3示出材料气体压力比较高时的放电路径。 FIG 3 illustrates a discharge path when the material is relatively high gas pressure.

图4示出材料气体压力比较低时的放电路径。 4 illustrates a discharge path when the material is relatively low gas pressure.

图5是模式地示出高频电源与阳电极2b的连接的平面图。 FIG 5 is a schematic plan view illustrating a high frequency power source connected to the anode electrode 2b.

图6是模式地示出实施形态2的等离子CVD装置的立体图。 FIG 6 is a perspective view of a plasma CVD apparatus schematically illustrating the second embodiment and the like.

图7是模式地示出实施形态2的等离子CVD装置的剖面图。 FIG 7 is a schematic sectional view showing an embodiment of the plasma CVD apparatus of FIG. 2 and the like.

图8是放大地示出实施形态2的等离子放电发生单元的一部分的剖面图。 8 is an enlarged cross-sectional view illustrating an embodiment of a portion of FIG generating unit 2 of the plasma discharge.

图9是模式地示出有机场致发光元件的剖面图。 FIG 9 is a schematic cross-sectional view illustrating an organic electroluminescent have element.

图10是放大地示出实施形态4的等离子放电发生单元的与图8相当的图。 FIG 10 is an enlarged diagram showing the embodiment 4 and the plasma discharge 8 units corresponding to FIG occurrence FIG.

图11是放大地示出实施形态5的等离子放电发生单元的与图10相当的图。 FIG 11 is an enlarged diagram illustrating Embodiment 5 of the plasma discharge corresponding to FIG. 10 and FIG units occurs.

图12是放大地示出实施形态6的等离子放电发生单元的与图10相当的图。 FIG 12 is an enlarged diagram showing the embodiment of the plasma discharge 6 corresponding to FIG. 10 and FIG units occurs.

图13是放大地示出实施形态7的等离子放电发生单元的与图10相当的图。 FIG 13 is an enlarged diagram showing Embodiment 7 of the plasma discharge corresponding to FIG. 10 and FIG units occurs.

图14是放大地示出实施形态8的等离子放电发生单元的与图10相当的图。 FIG 14 is an enlarged diagram showing the embodiment of the plasma discharge 8 corresponding to FIG. 10 and FIG units occurs.

图15是示出实施形态9的等离子放电发生单元的立体图。 FIG 15 is a perspective view illustrating generation unit Embodiment 9 of the plasma discharge.

图16是放大地示出实施形态10的等离子放电发生单元的立体图。 FIG 16 is an enlarged perspective view illustrating the embodiment of FIG generation unit 10 of the plasma discharge.

图17是示出实施形态11的等离子放电发生单元的立体图。 FIG 17 is a perspective view of an ion Embodiment 11 illustrated discharge generating unit and the like.

图18是示出实施形态11的等离子放电发生单元的平面图。 FIG 18 is a plan view of the embodiment of the plasma generating unit 11 is discharged.

图19是示出实施形态12的等离子放电发生单元的立体图。 FIG 19 is a perspective view showing Embodiment 12 of the other plasma discharge generating unit.

图20是示出实施形态12的等离子放电发生单元的平面图。 FIG 20 is a plan view illustrating an embodiment of a discharge plasma generating means 12.

图21是示出实施形态13的等离子放电发生单元以及被处理基板4的立体图。 21 is a diagram illustrating Embodiment plasma discharge generation unit 13, and a perspective view of a substrate 4 to be processed.

图22是放大地示出实施形态13的等离子放电发生单元的剖面图。 FIG 22 is an enlarged cross-sectional view illustrating an embodiment of the generating unit 13 of the plasma discharge.

图23是放大地示出实施形态14的等离子放电发生单元的与图22相当的图。 FIG 23 is an enlarged diagram showing the embodiment 14 of the plasma discharge unit 22 corresponding to FIG occurrence FIG.

图24是放大地示出实施形态15的等离子放电发生单元的与图22相当的图。 FIG 24 is an enlarged diagram showing the embodiment corresponding to the plasma discharge 22 and FIG generating unit 15 of FIG.

图25是放大地示出实施形态15的等离子放电发生单元的与图22相当的图。 FIG 25 is an enlarged diagram showing the embodiment of the plasma discharge 15 and 22 corresponding to the occurrence of FIG unit of FIG.

图26示出材料气体压力比较高时的实施形态16的放电路径。 26 illustrates a discharge path when the material embodiment of the high gas pressure of 16.

图27示出材料气体压力比较低时的实施形态16的放电路径。 FIG 27 illustrates a discharge path when the embodiment of the gas pressure is relatively low material 16.

图28是放大地示出实施形态17的等离子放电发生单元的剖面图。 FIG 28 is an enlarged cross-sectional view illustrating embodiment 17 forms a plasma discharge occurs in the cells.

图29是放大地示出实施形态18的等离子放电发生单元的剖面图。 FIG sectional view generation unit 29 is an enlarged diagram showing the embodiment 18 of the plasma discharge and the like.

图30是放大地示出实施形态19的等离子放电发生单元的剖面图。 30 is an enlarged cross-sectional view illustrating an embodiment of FIG. 19 and the like form discharge ion generating unit.

图31是示出实施形态20的等离子放电发生单元的概略立体图。 FIG 31 is a schematic perspective view illustrating the embodiment of FIG generating unit 20 of the discharge plasma.

图32是放大地示出实施形态21的等离子放电发生单元的剖面图。 FIG 32 is an enlarged cross-sectional view illustrating an embodiment of the generating unit 21 of the plasma discharge.

图33是以往的等离子CVD装置的概略图。 FIG 33 is a schematic view of a conventional plasma CVD apparatus.

图34是模式地示出以往的等离子CVD装置的剖面图。 FIG 34 is a schematic cross-sectional view illustrating a conventional plasma CVD apparatus.

具体实施方式 Detailed ways

以下,参照附图说明本发明的实施形态。 The following describes with reference to embodiments of the present invention. 而本发明并不限定于以下的实施形态。 Present invention is not limited to the following embodiments.

发明的实施形态1边参照图1和图2边说明本发明实施形态1的等离子CVD(化学汽相淀积)装置的结构。 Embodiment 1 of the invention with reference to FIGS. 1 and 2 sides ions described embodiment of this invention a structure of a CVD apparatus (chemical vapor deposition). 图1是示意地表示实施形态1的等离子CVD装置的立体图,图2是示意地表示实施形态1的等离子CVD装置的断面图。 1 is a perspective view schematically showing the embodiment of a plasma CVD apparatus, FIG. 2 is a schematic sectional view showing Embodiment 1 of the plasma CVD apparatus.

等离子CVD装置,备有可将被处理基板4放置在内部的处理室(真空容器)5、将材料气体导入该处理室5内的气体导入口6。 Plasma CVD apparatus, may be processed with the processing chamber (vacuum vessel) of the substrate 4 is placed inside 5, the material gas is introduced into the process gas inlet chamber 6 5. 作为典型的形式,在处理室5内设置着用于保持被处理基板4的基板座9,被处理基板4放置在基板座9上。 As a typical form, provided the process chamber 5 for holding the substrate to be processed in the substrate holder 4 9, the substrate 4 is placed on the substrate holder 9. 另外,基板座9相对于处理基板4,能够根据直流电压或交流电压进行必要的对应来施加偏置电压。 Further, the substrate holder 9 with respect to the substrate 4, it is possible to make the necessary bias voltage is applied according to a corresponding DC voltage or AC voltage.

在处理室5的外部,设置着对等离子放电发生单元15供给电力的、亦即施加电能的高频电源1、向处理室5内供给材料气体(以下也简称为“气体”)的气体供给部13、将处理室5内的气体排出的气体排出部10。 Outside the process chamber 5 is provided with a discharge of the plasma generating unit 15 for supplying power, i.e. high frequency power source 1 is applied power, gas supply unit 5 is supplied into the processing chamber material gas (hereinafter referred to simply as "gas") is 13, the processing gas in the discharge chamber 5 of the gas discharge portion 10. 作为气体排出部10,例如,采用机械式增压泵或旋转泵。 As the gas discharge portion 10, e.g., by mechanical booster pump or a rotary pump. 高频电源1,通过配线8与等离子放电发生单元15连接。 High frequency power source 1 through the wiring 8 and the unit 15 is connected to the plasma discharge occurs.

等离子放电发生单元15,与被处理基板4相隔一定距离而以与基板4相对的方式设置在处理室5内,并具有作为第1电极的阴电极(阴极)2a、在阴电极2a的一部分电极面上形成的电极间绝缘部分(以下,也称为“绝缘层”或“绝缘部分”)3、在绝缘层3上形成的作为第2电极的阳电极(阳极)2b。 Plasma discharge generation unit 15, with the portion of the electrode in the cathode electrode 2a of the substrate 4 at a distance from and in opposite manner the substrate 4 disposed in the processing chamber 5, and having a negative electrode as the first electrode (cathode) 2a, inter-electrode insulating portion formed on a face (hereinafter, also referred to as "insulating layer" or "insulating portion") 3, an anode electrode formed on the insulating layer 3 as a second electrode (anode) 2b. 阳电极2b,设置成比阴电极2a更接近被处理基板4。 Anode electrode 2b, than the cathode electrode 2a is arranged closer to the substrate 4.

在本实施形态中,沿着被处理基板4的表面方向中的一个方向(一面的方向),按条状设置着多个阳电极2b。 In the present embodiment, it is along a direction (side direction) in the surface direction of the substrate 4 process, provided by a plurality of strip-like anode electrode 2b. 按照这种结构,可以在同一平面上交替地反复形成阴电极2a的等离子放电面的区域和阳电极2b的等离子放电面的区域。 According to this structure, the plasma discharge regions are formed repeatedly region surface 2a of the cathode electrode and the anode electrode of the other plasma discharge surface 2b alternately on the same plane. 而关于等离子放电面,将在后文中说明。 In regard to a plasma discharge side, it will be described hereinafter.

阴电极2a,设有在厚度方向上贯通阴电极2a的气体导入口6。 Cathode electrodes 2a, 2a of the cathode electrode is provided in the through-thickness direction of the gas inlet 6. 从气体供给部13供给的气体在气体滞留部7暂时滞留后,通过气体导入口6导入到处理室5内。 After the gas supplied from the gas supply unit 13 temporarily retains the gas retention portion 7, through a gas introduction port 6 is introduced into the processing chamber 5.

等离子放电发生单元15的详细结构如下。 Discharge plasma generation unit 15 follows a detailed configuration.

即,等离子放电发生单元15,备有在与被处理基板4平行的方向上按条状延伸的绝缘层3、至少设在相邻的各绝缘层3之间的阴电极2a、以与阴电极2a隔离的状态设在绝缘层3的靠被处理基板4一侧的端部上的阳电极2b。 That is, plasma discharge generation unit 15, provided with the insulating layer 3 by the strip in a direction parallel to the substrate 4 to be processed extends, at least in the cathode electrode 2a is provided between the respective insulating layer 3 adjacent to the cathode electrode 2a provided in the isolated state on the anode electrode 2b on the end of the processing of the insulating layer 4 side of the substrate 3.

板状的阴电极2a,与被处理基板4平行地配置。 A plate-shaped cathode electrode 2a, and the substrate 4 are arranged in parallel. 相邻各绝缘层3之间的间隔彼此相等。 3 equally spaced from each other between the adjacent insulating layers. 各绝缘层3的上端面,由阳电极2b覆盖。 On each end face of the insulating layer 3, is covered by the anode electrode 2b. 就是说,阳电极2b也同样按条状形成。 That is, the anode electrode 2b is also formed by the strip. 这样一来,在等离子放电发生单元15内,由彼此面对的绝缘层3及阳电极2b的2个侧面和在其间露出的阴电极2a的上表面形成了多个断面为凹字形的沟槽18。 As a result, discharge occurs in a plasma unit 15, two side surfaces 3 and the anode electrode 2b and a plurality of cross section are formed on the surface of the cathode electrode 2a is exposed therebetween a concave shape facing each other by the insulating layer of the trench 18. 沟槽18内的阴电极2a,构成等离子放电面。 Negative electrode surface discharge plasma within the trench 18 2a, configuration and the like. 此外,在上述沟槽18内,沿沟长方向按规定间隔排列形成多个气体导入口6。 Further, in the groove 18, along the channel length direction are arranged at predetermined intervals a plurality of gas inlet ports 6 are formed. 各气体导入口6,设在沟槽18的沟宽方向的中央位置。 Each gas introduction port 6 provided at the center position of the width direction groove 18 of the groove.

当制造等离子放电发生单元15时,例如,如图1所示,准备多个断面形状为5mm×3mm的长方形、长度为300cm的铝棒。 When manufacturing the plasma discharge 15:00 generating unit, for example, as shown in Figure 1, a plurality of rectangular cross-sectional shape of 5mm × 3mm, a length of 300cm rod. 另外,准备大小为110cm×110cm、厚度为3mm的铝板。 Further, the size of prepared 110cm × 110cm, a thickness of the aluminum plate 3mm. 将用作阳电极2b的多个铝棒以相互间大致平行的方式配置在用作阴电极2a的铝板上。 A plurality of rod serving as the anode electrode 2b in a manner substantially parallel to each other arranged on an aluminum plate as the cathode electrode 2a. 铝棒与铝板之间,设置成彼此电气绝缘。 Between the aluminum rod and aluminum, arranged electrically insulated from each other. 具体地说,使阴电极2a与阳电极2b相互隔离,并通过将作为绝缘物的氧化铝夹在其空间内而形成电极间绝缘部分(绝缘层)3。 Specifically, the cathode electrode and the anode electrode 2a 2B isolated from each other, and in which a space interposed between the electrodes to form an insulating portion (insulating layer) 3 by alumina insulation. 电极间绝缘部分3的高度、亦即阴电极2a与阳电极2b之间的距离为10mm。 The height of the insulating portion between the electrodes 3, i.e. the distance between the cathode electrode 2a and the electrode 2b of the male 10mm. 以下,将具有阴电极2a、阳电极2b及电极间绝缘部分3的基板称为“电极基板”。 Hereinafter, having a cathode electrode 2a, 2b between the anode electrode and the electrode portion of the insulating substrate 3 is referred to as "electrode substrate." 电极基板,整体的大小为110cm×110cm,其中,等离子放电发生单元15的大小为100cm×100cm。 The electrode substrate, the overall size of 110cm × 110cm, wherein the size of the plasma discharge generation unit 15 is 100cm × 100cm. 此外,阴电极2a,也可以用整体的构件形成。 In addition, the cathode electrode 2a, may be formed integrally with the member.

在与阳电极2b延伸的方向大致正交的方向的断面上,阳电极2b及电极间绝缘部分3的宽度d1为5mm,阴电极2a的宽度d2为10mm,电极间绝缘部分3的高度d3为10mm,各阳电极2b及电极间绝缘部分3的间隔为15mm间距(pitch)。 In the cross-section extending in a direction substantially perpendicular to the direction of the anode electrode 2b, 2b between the anode electrode and the electrode width d1 of the insulating portion 3 is 5mm, the width d2 of the cathode electrode 2a is 10mm, the height of the inter-electrode insulating portion 3 is d3 10mm, among the anode electrode 2b and the electrode insulating portion 3 is 15mm pitch spacing (pitch). 高频电压,施加在电极基板的铝板上。 Frequency voltage is applied to the aluminum electrode substrate. 铝板,起着阴电极2a的作用,将隔着电极间绝缘部分3而与铝板绝缘的铝棒设定为接地电位,并将其用作阳电极2b。 Aluminum, plays the role of the cathode electrode 2a, the insulating portion interposed between the electrodes and the aluminum plate 3 and the insulating rod is set to the ground potential, and used as the anode electrode 2b.

作为被处理基板4,在阳电极2b的上方相距20mm的位置上设置了一块厚度为1.1mm的玻璃基板。 As the substrate 4, a glass substrate is provided having a thickness of 1.1mm above the anode electrode 2b a position 20mm apart. 在基板座9的后面(与被处理基板4的被处理面相反的一侧)设置着用于对被处理基板4进行加热的加热器(图中未示出)。 The substrate holder 9 in the back (the side opposite to the processing surface of the substrate to be processed. 4) is provided with a heater (not shown) for heating the substrate to be processed is 4. 被处理基板4,例如被加热到使其温度达到200℃。 4 substrate to be processed, for example, is heated to a to a temperature of 200 ℃.

等离子放电发生单元15,根据施加在阳电极2b与阴电极2a之间的电压(电位差)产生放电(等离子)11。 , 15, (potential difference) is generated discharge (plasma) 11 in accordance with a voltage applied between the anode electrode and the cathode electrode 2b of the plasma discharge generation unit 2a. 通过使气体流入等离子放电发生单元15,使气体裂解·离解而生成原子团。 By flowing into the plasma discharge gas generation unit 15, the gas dissociation of the cleavage-generated radicals. 图2中的12表示原子团的流向。 In FIG. 212 shows the flow of radicals. 所生成的原子团扩散到被处理基板4,并附着·淀积在由基板座9保持的基板4上。 The generated radicals diffused into the substrate 4, and attached to the deposition-substrate holder 9 held by the substrate 4. 即,使膜在基板4的表面上生长而形成薄膜。 That is, the film is grown to form a film on a surface of the substrate 4.

所生成的原子团,接连不断地到达薄膜表面,从而使薄膜的厚度不断增加。 The generated radicals, one after another to reach the surface of the film, thereby increasing the film thickness. 当继续施加电压直至达到所设定的膜厚之后,将对阳电极2b与阴电极2a之间的电压施加(对等离子放电发生单元15的电力供给)停止。 When the voltage is continuously applied until the film thickness reaches the set, will the voltage between the anode electrode and the cathode electrode 2a 2b is applied (power supplied to the plasma discharge unit 15 occurred) is stopped. 按照这种方式,对被处理基板4的表面进行等离子处理。 In this manner, the surface of the substrate 4 is subjected to plasma treatment. 在这之后,在将被处理基板4从基板座9取下并从处理室5取出时,即可得到已形成了薄膜的薄膜形成基板。 After that, the substrate 4 to be processed in the substrate holder 9 is removed and taken out from the processing chamber 5, to obtain a thin film formed from the film forming substrate.

以下,说明本实施形态的等离子CVD装置的动作及采用了等离子CVD装置的电子器件制造方法。 Next, a method of manufacturing an electronic device according to the present embodiment, the operation of the plasma CVD apparatus and the use of a plasma CVD apparatus. 此外,还实际制作了本实施形态的等离子CVD装置,并在下文中给出该装置的运行结果。 Furthermore, the actual production of the present embodiment is a plasma CVD apparatus, and operation results of the device are given below. 以下给出的具体数值,只不过是表示本发明的一实施例的情况,并不是对本发明有任何限定。 Specific numerical values ​​given below, merely that it is a case of the embodiment of the present invention, there is not any limitation of the invention. 另外,对于这个运转结果,在被处理基板4上施加偏置电压。 Further, the results for this operation, a bias voltage is applied on the substrate 4.

使用的材料气体,为SiH4(200sccm)、H2(10slm)及N2(20slm)。 The material gas used is SiH4 (200sccm), H2 (10slm) and N2 (20slm). 这里,所谓「sccm」,是在0℃下以“立方厘米/分”为单位流过的气体流量。 Here, "sccm" is at 0 ℃ to "cc / min" for the gas to flow through the flow units. 另外。 In addition. 所谓「slm」,是以“升/分”为单位流过的气体流量。 The so-called "slm" based on "L / min" for the gas to flow through the flow units. 如图2所示,从排列在阴电极2a上的气体导入口6进行了材料气体的导入。 As shown in FIG 2 introduced from the cathode electrode 2a arranged at the gas port 6 were introduced material gas. 为施加电能,使用了频率13.56MHz的高频电源1。 To apply electrical energy, using a high frequency power source 1 a frequency of 13.56MHz.

在图1和图2所示的装置中,通过将气体压力设定为200Pa、将高频功率设定为7kW并改变基板温度而形成了氮化硅膜。 In the apparatus shown in FIG. 1 and FIG. 2, the gas pressure is set to 200Pa, the high frequency power is set to 7kW and changing the substrate temperature to form a silicon nitride film. 对所形成的氮化硅膜的膜质进行了评价。 The film quality of the formed silicon nitride film was evaluated. 将其结果示于表1。 The results are shown in Table 1. 氮化硅膜的成膜速度,为0.4nm(4)/秒,膜内的膜厚均匀性为±3%。 Silicon nitride film deposition rate, is 0.4nm (4) / sec, film thickness uniformity of ± 3%.

另一方面,为进行比较,对图33和图34所示的装置也进行了同样的运行试验。 On the other hand, for comparison, of the device shown in FIGS. 33 and 34 also run the same test. 图33和图34所示的装置,除以下几点外,与本实施形态的装置相同。 FIGS. 33 and 34 shown in FIG apparatus, except for the following, the same apparatus according to the present embodiment. 图33和图34所示的装置,为平行平板型装置,通过对阴电极2a施加高频功率而在与其相对的阳电极2b上所设有的玻璃基板上进行成膜处理。 Apparatus shown in FIGS. 33 and 34, a parallel plate type apparatus, a film forming process on a glass substrate by applying a high-frequency power to the cathode electrode and the anode electrode 2a 2b opposed thereto provided therefor. 电极间距离为20mm。 Inter-electrode distance is 20mm.

表1中的膜质参数,按如下方式进行了测定。 Table 1 film quality parameters, were measured as follows. 电阻率,是通过测定在膜厚方向施加1MA/cm的电场时流过的电流而计算出的。 Resistivity, a current flowing when 1MA / cm electric field is applied in the thickness direction is calculated by measuring. 电阻率的单位为Ωcm。 Units of resistivity Ωcm. 以下,说明更详细的测定方法。 Hereinafter, the measuring method described in more detail. 在成膜处理用的玻璃基板上的端部放置膜质测定用的导电性基板、例如P型硅片等导电性基板。 The end portion is placed on the glass substrate by film forming process of the conductive substrate film quality measurement, for example, P-type silicon substrate and conductive. 将成膜处理用的玻璃基板与导电性基板一起进行成膜处理。 The glass substrate with the film forming process of the film formation process together with the conductive substrate. 在所形成的膜上,蒸镀铝、铬或钛等金属薄膜。 Film, vapor deposited aluminum, titanium, chromium or the like is formed on the metal thin film. 在导电性基板与金属薄膜之间施加约500V以下的电压,测定流过的微小电流,并计算电阻率。 It is applied between the conductive substrate and the metal thin film voltage of about 500V or less, measured minute current flows, and the resistivity is calculated. 或者,也可以不进行金属薄膜的蒸镀,而是采用将水银与膜面接触并通过水银施加电压的方法。 Alternatively, the vapor-deposited metal film may not be performed, but the method and the mercury in contact with the film surface by applying a voltage mercury.

氢结合量,利用傅里叶变换红外光谱法,根据硅和氢的结合量及氮和氢的结合量进行鉴定。 The amount of hydrogen bonding, Fourier transform infrared spectroscopy, identified according to the amount of bound hydrogen and silicon and the amount of bound nitrogen and hydrogen. 氢结合量的单位为cm-3。 Unit is the amount of hydrogen bonding cm-3. 氧结合量,是基于傅里叶变换红外光谱法的相对强度,并且是硅和氧的键合光谱强度对硅和氮的键合光谱强度的相对值。 Oxygen binding amount, a relative intensity of Fourier transform infrared spectroscopy based, and silicon and oxygen bond of silicon and nitrogen spectral intensities of the spectral values ​​of the relative bond strength. 以下,说明对氢结合量及氧结合量的更详细的测定方法。 Hereinafter, the method for measuring the amount of bound hydrogen and oxygen in the amount of binding in more detail. 与测定电阻率时一样,在成膜处理用的玻璃基板上的端部放置膜质测定用的导电性基板、例如P型硅片等导电性基板。 As with the resistivity measurement, the end portion on the glass substrate by film forming process of the conductive substrate is placed film quality measurement, for example, P-type silicon substrate and conductive. 将成膜处理用的玻璃基板与导电性基板一起进行成膜处理。 The glass substrate with the film forming process of the film formation process together with the conductive substrate. 通过照射红外激光并对其干涉波形进行傅里叶变换处理,根据波数光谱测定膜对红外光的吸收。 Interference waveform and its Fourier transform processing by irradiation with an infrared laser light, infrared light absorbing film on the measured wave number spectrum. 然后,可以根据由氢键引起的峰值(2150cm-1附近和3350cm-1附近)及由氧键引起的峰值(1070cm-1附近)的强度求得各自的结合量。 Then, it is possible (near 2150cm-1 and 3350cm-1 near) and peak (vicinity of 1070cm-1) caused by oxygen bond strength determined in accordance with the amount of binding of each of the peak caused by a hydrogen bond. 氮和氢的结合量、硅和氮的键合光谱强度、硅和氧的键合光谱强度,例如可以参照井村健著、《非晶形薄膜的评价》53~55页(1989年、共立出版公司)的文献进行测定。 Combined amount of nitrogen and hydrogen, silicon and nitrogen bond spectral intensity, silicon and oxygen bond spectral intensity, for example, reference to Tseng health with, "Evaluation of amorphous film" 53 - 55 (1989, Kyoritsu Publishing Company ) was measured in the literature.

作为氢结合量的其他测定方法,可以举出样品加热(达数百度)时采用气体色谱法的方法及二次离子质量分析法。 The method of using a gas chromatography as another method for measuring the amount of hydrogen bonding may include heating the sample (up to several Baidu) and secondary ion mass spectrometry. 按照二次离子质量分析法,测定分辨能力为数百μm,因而连膜的深度方向也可以进行分析,所以,即使测定对象的膜为器件的构成膜时也可以进行分析。 The secondary ion mass spectrometry, measurement resolution of several hundreds [mu] m, and thus even the depth direction of the film may also be analyzed, so that even when the measurement target film is a film constituting the device may be analyzed.

如表1所示,对于电阻率,按照本实施形态,可以得到在各温度区都比平行平板型装置高的绝缘性膜。 As shown in Table 1, the resistance ratio, according to the present embodiment, it is possible to obtain an insulating film having a high parallel plate type apparatus than in the respective temperature zones. 一般认为,这是由于在本发明的装置中可以进行几乎不发生等离子损伤的成膜处理所以可以形成高质量的膜,与此相反,在平行平板型装置中,对成膜面的等离子损伤不可避免,因而很难获得好的膜质。 It is generally believed that this is because the film deposition process can be performed almost plasma damage or the like occurs in the apparatus according to the present invention can be a high-quality, on the contrary, in the parallel plate type apparatus, the film-forming surface of the ion damage and the like can not be avoid, making it difficult to obtain a good film quality.

在本实施形态的情况下,氢结合量,在各温度区大致为一定值,与此不同,在平行平板型装置的情况下,当被处理基板4的温度为100℃时氢结合量大幅度降低。 In the present embodiment, the amount of hydrogen bonding at each temperature zone is substantially constant value. On the contrary, in the case of parallel plate type apparatus, when the temperature of the substrate to be processed 4 was 100 ℃ substantial amount of hydrogen bonding reduce. 作为其原因,一般认为是在平行平板型装置的情况下氢分子的离解量少的缘故。 The reason for this is generally considered in the case of a parallel plate type apparatus dissociation of hydrogen molecules is less sake. 详细地说,其原因可以认为是,当被处理基板4的温度高时,可以使氢原子在膜表面上扩散,所以能使氢的悬浮键(dangling bond)充分地进行到末端。 In detail, the reason may be considered that when the high temperature of the substrate to be processed is 4, hydrogen atoms can be diffused on the film surface, hydrogen can dangling bonds (dangling bond) sufficiently to end. 但是,当被处理基板4的温度低时,氢原子能够在膜表面上扩散的距离减小,本来离解量就很少的氢原子中未成键的分枝很难充分地进行到末端,因而悬浮键将残留在膜内。 However, when the temperature of the substrate 4 to be processed is low, the hydrogen atoms can diffuse from the film surface is reduced, already small branches of non-bonded hydrogen atoms sufficiently difficult to dissociate amount terminus, thus suspending the key remaining in the membrane. 当在膜内存在悬浮键时,不仅使膜质变低,而且也很难保持作为膜的长期稳定性。 When there dangling bonds in the film, the film is not only low qualitative, but also difficult to maintain long-term stability as a film.

按照本实施形态的等离子CVD装置,氢分子的离解量多,所以,可以认为,即使被处理基板4的温度低、氢原子能够在膜表面上扩散的距离减小,也可以由本来离解量就很多的氢原子充分地进行到悬浮键的末端。 The multi dissociation amount of the present embodiment is a plasma CVD apparatus, hydrogen molecules, it is possible that the low temperature even when the substrate 4, the distance of the hydrogen atoms can be diffused on the film surface is reduced, it may be on the original dissociation amount many hydrogen atoms sufficiently to the end of the suspension linkages. 因此,由本实施形态的等离子CVD装置得到的电子器件,绝缘膜内的氢结合量比现有器件多。 Thus, obtained by the plasma CVD apparatus of this embodiment and other electronic devices, the insulating film than the prior art devices multiple hydrogen bonding. 例如,如表1所示,绝缘膜内的氢结合量为7×1021cm-3以上,理想情况下,可以得到1×1022cm-3以上的电子器件。 For example, as shown in Table 1, the amount of hydrogen bonding of the insulating film 7 × 1021cm-3 or more, ideally, can be obtained 1 × 1022cm-3 or more electronic devices.

表1 Table 1

关于氧键,无论在本实施形态还是在平行平板型装置的情况下,在制造初期都没有观测到,因而氧结合量为0。 Of the oxygen bond, or both in the present embodiment, in the case of parallel plate type apparatus, at the beginning of manufacture are not observed, and thus the amount of oxygen bound to zero. 但是,在大气中放置1个月后的测定中,在平行平板型装置的情况下观测到氧键。 However, placing measured after 1 month in the atmosphere, oxygen bond was observed in the case of parallel plate type apparatus. 其结合量随膜质的恶化而增多。 Combined with the deterioration in its film quality and amount of the increase. 而在本实施形态中,即使在1个月后的测定中也没有观测到氧键。 In the present embodiment, even when measured one month after the oxygen bond was not observed. 因此,按照本实施形态的等离子CVD的装置,可以得到具有优良的保护膜特性的透明绝缘膜。 Thus, the apparatus of the present embodiment according to the plasma CVD, the insulating film can be obtained a transparent protective film having excellent properties. 将这种绝缘膜形成为外层(称作最外侧的层,以下同)的电子器件,可以保持长期的稳定性。 Such an electronic device is formed as an insulating film layer (referred to as the outermost layer, hereinafter the same), it is possible to maintain long-term stability.

当观察成膜后的反应室内的状态时,在平行平板型装置的被处理基板4的温度为100℃的情况下,可以观察到很多作为生成物的粉末。 When the observation state of the reaction chamber after the film formation, in the case of a parallel plate type apparatus 4 to be processed is a substrate temperature of 100 deg.] C, as can be observed that many of the resultant powder. 该粉末,一般认为是硅烷的聚合物。 The powder is generally considered to be a silane polymer. 众所周知,当产生粉末时,粉末将进入所形成的膜内,因而使膜质恶化。 It is well known, when a powder, a powder formed into the film, thereby making the film quality deterioration. 在本实施形态中,在各温度区内都几乎看不到粉末,所以,即使从这个观点来看也显示出优良的装置性能。 In the present embodiment, in the temperature region are almost invisible powder, so that even from this point of view also shows the excellent performance of the device.

本实施形态的等离子CVD装置,在阴电极2a及阳电极2b的各电极面中,只有可以从被处理基板4的法线方向看到的面(部分)起等离子放电面的作用。 The present embodiment is a plasma CVD apparatus, the electrode surface of the cathode electrode in each of the anode electrode 2a and 2b, only can be seen from the normal direction of the substrate 4 surface (portion) from the plasma discharge surface effect. 换句话说,无论阴电极2a还是阳电极2b都具有可以从被处理基板4侧看到其全部等离子放电面的结构。 In other words, regardless of the anode electrode or cathode electrode 2a 2b has a structure which can be seen all of the plasma discharge surface 4 side from the substrate to be processed. 这里,所谓等离子放电面,不仅意味着在电极2a、2b上使用的构件的表面,而且是交换着等离子部和带电粒子(电荷)的实际上起着放电电极作用的表面。 Here, the surface discharge plasma, means not only the electrodes 2a, used on the surface member 2B, and a switching portion and a plasma of charged particles (charged) actually plays a role in the surface of the discharge electrode.

具体地说,阳电极2b的靠阴电极2a一侧的面及与阳电极2b的形成区域重叠的区域内的阴电极2a的面,都是从被处理基板4侧不能看到的面。 Specifically, the inner surface of the cathode electrode 2a is formed on the surface region of the anode electrode and the cathode electrode 2b side of the overlap region 2a anode electrode 2b, are to be processed from the side of the substrate 4 can not see the surface. 由于在阳电极2b的靠阴电极2a一侧的面和与阳电极2b的形成区域重叠的区域内的阴电极2a的面之间存在着电极间绝缘部分3,所以阳电极2b的靠阴电极2a一侧的面及与阳电极2b的形成区域重叠的区域内的阴电极2a的面,都不起等离子放电面的作用。 Because of the inter-electrode insulating surface between the cathode electrode 2a is formed in a region on the surface of the anode electrode and the cathode electrode 2b side 2a overlap region 2b of the anode electrode portion 3, the anode electrode on the cathode electrode 2b the side surface 2a of the surface and a cathode electrode in the region overlapping with the anode electrode formation region 2a and 2b, and does not play a role in other plasma discharge surface.

当在两电极2a、2b之间不存在电极间绝缘部分3时,阳电极2b的靠阴电极2a一侧的面及与阳电极2b的形成区域重叠的区域内的阴电极2a的面,都将具有等离子放电面的功能。 When 2a,. 3, the surface of the cathode electrode 2b in the region of the anode electrode formation region and the abutment surface electrode 2b and the anode side 2a of the cathode electrode 2a that overlaps the inter-electrode insulating portion 2b does not exist between the two electrodes, both having surface features such as plasma discharge. 当在这种状态下对阴电极2a施加高频功率时,主要的放电发生在阴电极2a表面与阳电极2b的靠阴电极2a一侧的面之间。 In this state, when high-frequency power is applied to the cathode electrode 2a, the main discharge occurs between the cathode electrode 2a side against the surface of the cathode electrode and the anode electrode surfaces 2a and 2b. 但是,即使在该空间内产生的等离子使材料气体离解,离解后的大部分原子团也将作为膜而附着在阳电极2b的靠阴电极2a一侧的面上了。 However, even if the space in the plasma dissociation of the material gas, the majority of the dissociated atomic group will be attached as a film on the negative electrode side surface 2a of the anode electrode 2b. 因此,不能将成膜速度提高到希望达到的程度,所以,对作为装置的处理能力产生了限制。 Thus, the deposition rate can not be increased to achieve the desired degree, so that, as the processing power generating device is limited. 按照图1和图2所示的本实施形态的等离子CVD装置,由于是可以从被处理基板4侧看到起着等离子放电面作用的全部电极表面的结构,所以离解后的原子团大部分都能有效地导向被处理基板4。 Plasma CVD apparatus according to the present embodiment, like FIG. 1 and FIG. 2, the entire structure can be seen because it is the electrode surface plays a role of a plasma discharge surface 4 and the like from the side of the substrate to be processed, it can be the most radical dissociation effectively guide the substrate 4.

如图1和图2所示,采用可以从被处理基板4侧看到起着等离子放电面作用的全部电极表面的结构的另一个优点在于,是扩展了压力的可设定范围。 1 and 2, using 4 can be seen from the side of the substrate to be processed further advantage of the structure of the entire surface of a plasma discharge electrode surface plays a role like that is extended settable pressure range. 在图33和图34所示的平行平板型装置的情况下,由于在结构上决定了电极间的距离,所以电极间的距离就是放电路径长度本身,因而易于产生等离子的材料气体压力将限定在某个一定的范围内。 The and the gas pressure of the material 33 in FIG. 34 the case of a parallel plate type apparatus shown in the decision to the distance between the electrodes in the structure, the distance between the electrodes is the discharge path length itself, and thus easily generated plasma will be defined in within a certain range. 这是由于受放电工学中熟知的帕邢定律的支配的缘故。 This is due to the reason put electrical engineering known Paschen's law governed. 所谓帕邢定律,是这样一种定律,即,由材料气体压力与放电路径长度的乘积决定可以开始放电的空间电场强度,并取得在该乘积值为某个值的情况下可以开始放电的空间电场强度的极小值,而在大于或小于该乘积值的情况下可以开始放电的空间电场强度上升。 The so-called Paschen's law is a law, that is, the product of the pressure and the material gas discharge path length determines the electric field intensity may start discharge, and to obtain a space in the case where the multiplied value of a discharge start value minimum electric field strength, electric field strength can be increased while the discharge is started in the case of larger or smaller than the multiplication value.

另一方面,当采用图1和图2所示的结构时,两电极2a、2b的电极面彼此并不相对,在其间产生的放电的路径,如图3和图4所示,随材料气体压力的高低而变短或变长。 On the other hand, when the structure shown in FIG. 1 and FIG. 2, the discharge path of the two electrodes 2a, 2b of the electrode surfaces not opposed to each other, generated therebetween, as shown in FIGS. 3 and 4, with the material gas the low pressure becomes shorter or longer. 图3和图4中的11b,表示放电的典型路径。 FIG and FIG. 4 11b 3, showing a typical discharge path. 在图3的情况下,材料气体压力较高,因而放电路径变短。 In the case of FIG. 3, the material gas higher pressures, and thus the discharge path becomes short. 在图4的情况下,材料气体压力较低,因而放电路径变长。 In the case of Figure 4, the material gas pressure is low, and thus the discharge path becomes long.

另外,两电极2a、2b的电极面不在同一平面上还有一个优点。 Further, the electrode surface of both the electrodes 2a, 2b is not on the same plane there is an advantage. 具体地说,与两电极2a、2b的电极面大致在同一平面上的情况(例如,参照特开2001-338885号公报、特开2002-217111号公报、及特开2002-270522号公报)相比,放电路径增加了大致相当于电极间绝缘部分3的高度,所以气体的离解效率增加。 Specifically, with 2a, 2b of the electrode surface where the electrodes substantially in the same plane (e.g., refer to Laid-Open Publication No. 2001-338885, Laid-Open Patent Publication No. 2002-217111, No. 2002-270522 and Laid-Open Publication) phase ratio, the discharge path increases the height substantially corresponding to the inter-electrode insulating portion 3, so increasing the efficiency of the dissociation gases. 进一步,通过调整电极间绝缘部分3的高度,可以调整放电路径的距离,所以,还具有材料气体压力的调整自由度高的优点。 Further, by adjusting the height of the inter-electrode insulating portion 3 can be adjusted from the discharge path, therefore, also has the advantage of adjustment of the material gas pressure of a high degree of freedom. 如上所述,通过改变放电路径的长度,可以使易于产生等离子的材料气体的压力范围变宽。 Material gas pressure in the range described above, by changing the length of the discharge path, can easily generate a plasma widens.

作为设置气体导入口6的位置。 As set position of the gas introduction port 6. 如图1和图2所示,最好设在阴电极2a侧。 As shown in FIG. 1 and FIG. 2, it is preferably provided on the cathode electrode 2a side. 在本实施形态的装置中,阴电极2a比阳电极2b离被处理基板4远。 In the apparatus of the present embodiment, the anode electrode than the cathode electrodes 2a and 2b from the substrate 4 away. 因此,通过从阴电极2a侧导入气体,可以将平稳的气流14导向基板4。 Thus, by introducing the gas from the cathode electrode 2a side, stream 14 may be smooth toward the substrate 4. 此外,在阴电极2a和阳电极2b之间,存在着等离子区域,因而使材料气体沿着等离子放电的放电路径流动。 Furthermore, between the anode electrode and the cathode electrode 2a 2B, there is the plasma region, thereby making the material discharge path along the gas flow of the plasma discharge. 因此,通过使材料气体在等离子中流动的距离延长,可以促进气体的离解。 Thus, by passing the material gas plasma flowing from the other extension can promote gas dissociation.

阴电极2a的等离子放电面的面积,最好大于阳电极2b的等离子放电面的面积。 Ion discharge surface area of ​​the cathode electrode 2a and the like, is preferably greater than the surface area of ​​the plasma discharge electrode 2b of the male and the like. 其理由如下。 The reason is as follows. 在平行平板型装置中,阳极覆盖部的电场比阴极覆盖部小。 In the parallel plate type apparatus, the electric field of the anode is smaller than the cover portion covers the cathode part. 这是由于即使两电极2a、2b的面积大致相等而周边的壁面等也处在与阳电极2b相同的接地电位,所以,实际上使接地电位部的合计面积大于阴电极2a的面积。 This is because even if the area of ​​the two electrodes 2a, 2b is substantially equal to the peripheral wall and the like are also the same in the anode electrode 2b and a ground potential, so, in fact, so that the total area of ​​the ground potential is larger than the area of ​​the cathode electrode portion 2a. 因此,通过使阴电极2a的等离子放电面的面积大于阳电极2b的等离子放电面的面积,可以增大阳极覆盖部的电场。 Thus, discharge surface 2a of the cathode electrode by a plasma surface area greater than the area of ​​the plasma discharge electrode 2b of the male and the like, can increase the electric field of the anode covered portion. 在这种状态下,不仅在阴极覆盖部而且在阳极覆盖部也可以促进气体的离解,从而使作为总体的气体离解量进一步增加。 In this state, it covers not only the cathode portion and anode portion may cover promote gas dissociation, so as to further increase the overall gas amount of dissociation.

在本实施形态中,相邻阳电极2b间的重复距离、亦即阳电极2b的间距为15mm,而阳电极2b与被处理基板4的表面之间的距离为20mm。 In the present embodiment, the repeat distance between adjacent anode electrode 2b, i.e. anode electrode 2b pitch is 15mm, and the distance between the anode electrode 2b and the surface of the substrate 4 to be processed is 20mm. 在这种情况下,膜厚分布在±3%以内。 In this case, the film thickness distribution within ± 3%. 但是,如将阳电极2b与被处理基板4的表面之间的距离变更为14mm、亦即使其比阳电极2b的间距短,则膜厚分布为±8%,因而将依据电极2a、2b的形成图案得到波状的膜厚分布。 However, as the distance between the anode electrode 2b and the surface of the substrate 4 is changed to 14mm, i.e. shorter than the pitch so that the anode electrode 2b, the film thickness distribution of ± 8%, and thus will be based electrodes 2a, 2b of forming a wavy pattern obtained film thickness distribution. 如图1和图2所示,阳电极2b具有条状的图案,所以重要的是不能够将该图案转印为成膜图案。 As shown in FIGS. 1 and 2, the anode electrode 2b having a striped pattern, it is important that the pattern can not be transferred to the film formation pattern. 为此,阳电极2b与被处理基板4的表面之间的距离,最好大于阳电极2b间的重复距离。 To this end, the distance between the anode electrode 2b and the surface of the substrate 4 is preferably greater than the repeat distance between the anode electrode 2b.

在本实施形态中,如图5(a)所示,将多个棒状阳电极2b的每1个在端部通过配线8与高频电源1连接,但本发明的装置并不限定于此。 In the present embodiment, FIG. 5 (a), a plurality of rod-shaped anode is connected to the electrode 2b at one end of each wire 8 by the high frequency power source 1, the apparatus of the present invention is not limited thereto . 例如,如图5(b)所示,也可以用相同材质的棒材将多个棒状阳电极2b的一个端部联接在一起,并将接自电源1的配线8与该联接用的棒材连接。 For example, FIG. 5 (b), the bars may be of the same material by coupling together a plurality of rod-shaped end portion 2b of the anode electrode, and then from the power supply line 1 and 8, with the coupling rod material connection. 或者,如图5(c)所示,将多个棒状阳电极2b的两个端部都用相同材质的棒材联接,并将接自电源1的配线8与该联接用的棒材连接。 Alternatively, FIG. 5 (c), the two ends of the plurality of rod-shaped anode electrode 2b are coupled with the rod of the same material, and then from the power supply line 1 is connected to the rod 8 by the coupling of .

用于保持被处理基板4的处理基板座9,在图1中仅保持着被处理基板4的端部,因此,使被处理基板4处于浮动电位。 For holding a substrate to be processed is processed substrate holder 4 9, FIG. 1 only in the end portion holding the substrate 4, so that the substrate 4 at a floating potential. 在另一方面,例如为使基板温度在面内均匀分布,有时在被处理基板4的背后靠近地设置导体板。 Behind the other hand, for example, the substrate temperature is uniformly distributed in the surface, and sometimes the substrate 4 is provided close to the conductor plate. 在这种情况下,导体板可以是浮动电位,也可以是接地电位。 In this case, the conductive plate may be a floating potential may be a ground potential. 可以不对被处理基板4的电位进行特殊考虑的原因是,由于等离子11的存在位置与被处理基板4相隔一定的距离,所以仅使在电荷上呈中性的原子团飞散到被处理基板4上。 Reason can not be processed potential of the substrate 4 of special consideration, since the other four spaced distance presence of ion position 11 and the substrate to be processed, so that only the neutral radicals on charges scattered onto the substrate 4. 在需要对基板表面进行一定程度的离子冲击的成膜工艺的情况下,通过在被处理基板4的背后设置导体板,还可以有效地控制其电位。 In the case where the deposition process is required a certain degree of ion bombardment of the substrate surface, to be processed by the conductor plate 4 is disposed behind the substrate, but also can effectively control the potential thereof. 在这种情况下,可以由被处理基板4背后的导体板的电位从相隔一定的距离的等离子11吸引离子束,并使离子照射在被处理基板4的表面上。 In this case, a potential can be separated from the underlying substrate to be processed conductor plate 4 a certain distance from the plasma beam 11 to attract ions, and ion irradiation on the treated surface of the substrate 4.

在本实施形态中,作为被处理基板4采用了玻璃基板,但所使用的被处理基板4的种类,并不限定于玻璃基板。 In the present embodiment, as the substrate to be processed using the glass substrate 4, but the type of the substrate 4 to be processed to be used is not limited to the glass substrate. 如上所述,由于即使在100℃的基板温度下也能形成质量优良的膜,所以可以采用由有机材料形成的基板。 As described above, since even at a substrate temperature 100 ℃ can also form good quality films, the substrate can be formed of an organic material used. 例如,可以使用玻化温度为200℃左右的塑料基板等树脂类的基板等。 For example, a substrate like a glass transition temperature of about 200 ℃ resinous plastic substrate or the like. 按照本发明的装置,也可以对树脂类的基板等形成氮化硅膜或非晶形硅膜,并进行TFT器件的制作。 Apparatus according to the invention, a silicon nitride film or amorphous silicon film may be formed on the resin substrate or the like, and forming a TFT device.

在本实施形态中,作为所使用的高频电源1的频率,采用了13.56MHz,但高频电源1的频率并不限定于此。 In the present embodiment, as the frequency of the high frequency power source 1 is used, the use of 13.56 MHz, but the frequency of the high frequency power source 1 is not limited thereto. 在本实施形态的装置中,由于在被处理基板4的表面上几乎不存在等离子11,所以在13.56MHz以下的低频下不会产生通常成为问题的等离子损伤增加那样的恶劣影响。 In the apparatus of the present embodiment, since there is almost no plasma 11 on the surface of the substrate 4, it generally does not occur a problem such as increase in plasma damage at a low frequency of 13.56MHz adverse effects following. 因此,也可以使用13.56MHz以下的低频。 Therefore, you can use the following low-frequency 13.56MHz. 但是,作为下限频率,300KHz是适当的。 However, as the lower limit frequency, 300KHz appropriate. 其原因是,通过在两电极2a、2b之间捕捉离子而提高离子密度的有效极限频率为300KHz。 The reason for this is that ion density is increased by capturing ions between the two electrodes 2a, 2b effectively limit frequency of 300KHz.

另外,即使在13.56MHz以上的通常被称为VHF(Very HighFrequency:甚高频)区的高频下也可以应用。 Further, even if often referred to as VHF (Very HighFrequency: VHF) may also be used in the above 13.56MHz high frequency region. 在平行平板型装置的情况下,随着频率提高、自由空间波长变短,在大型装置中存在着产生驻波的问题。 In the case of parallel plate type apparatus, as frequency increases, free space wavelength is shortened, there is a problem of the standing wave is generated in a large apparatus. 这里,进行更详细的说明。 Here, in more detail. 高频,以在等离子中(详细地说,在等离子的表面部)分布的形式存在。 Frequency to the plasma (specifically, the surface portion other ions) is present in the form of distribution. 因此,如驻波可能存在的大小程度例如为1/2波长、频率为100MHz时等离子的大小约为1.5m,则驻波的产生将使高频强度变得不均匀。 Thus, as the size of the standing wave may be present, for example, the extent of 1/2 wavelength at a frequency of 100MHz isochronous ionic size of about 1.5m, the strength of a standing wave of a high frequency would become uneven. 因此,将发生高频强度强的部位的成膜厚度变厚、高频强度弱的部位的成膜厚度变薄的异常情况。 Accordingly, the film thickness strength strong high frequency portion of the thickening will occur, the high frequency film thickness abnormality weak intensity thinned portion.

按照本发明,等离子部各自为小的独立形态,因而从原理上就不会产生驻波。 According to the present invention, the plasma portion of each small independent form, and thus the standing wave is not generated in principle. 这里,进行更详细的说明。 Here, in more detail. 在本发明的情况下,产生许多与电极图案相对应的小的等离子、例如阴电极2a的法线方向的几厘米以下的等离子。 In the present invention, many small plasma generating electrode pattern corresponding to, for example, like a normal direction of a few centimeters below the cathode electrode 2a ions. 在图2、图3和图4中,相邻的等离子部看上去好象相互连接,但实际上在阳电极2b上被分断。 In FIG. 2, FIG. 3 and FIG. 4, adjacent the plasma portion looks as if connected to each other, but actually breaking on the anode electrode 2b. 因此,高频的传播被邻接的等粒子体的间隙部分分断,其结果是不会产生驻波。 Thus, the high frequency propagation breaking gap portion is adjacent to the body of particles and the like, it does not produce a result, a standing wave. 所以,即使在大型的等离子CVD装置中,也可以导入VHF区的高频。 Therefore, even in the large plasma CVD apparatus, it may be introduced into the VHF high-frequency region. 但是,作为上限频率,300MHz是适当的。 However, as the upper limit frequency, 300MHz appropriate. 由于300MHz是使通过在两电极2a、2b之间捕捉电子而提高电子密度的效果达到饱和的频率,所以即使将频率提高到该值以上电子密度的效果也不会改变,相反,高频功率的投入却可能引起很多困难。 Since 300MHz is passed through the two electrodes 2a, electron capture effect is increased electron density between saturated 2b frequencies, even if the effect to increase the frequency above the value of the electron density does not change, contrast, high-frequency power investment but it may cause a lot of difficulties.

发明的实施形态2图6是示意地表示本发明实施形态2的等离子CVD装置的立体图,图7是示意地表示实施形态2的等离子CVD装置的断面图。 2 embodiment of the invention. FIG. 6 is a perspective view schematically showing other embodiment of the plasma CVD apparatus 2 of the present invention, and FIG. 7 is a schematic cross-sectional view showing the embodiment of the plasma CVD apparatus 2 like. 另外,图8是图7的局部放大图。 Further, FIG. 8 is a partially enlarged view of FIG. 边参照图6~图8边说明实施形态2的等离子CVD装置。 8 with reference to FIG. 6 to FIG side like Embodiment 2 described plasma CVD apparatus. 在以下的说明中,以相同的参照符号表示实质上具有与实施形态1的等离子CVD装置相同的功能的构成要素,并将其说明省略。 In the following description, the same reference numerals represent the same constituent elements having substantially the form of the plasma CVD 1 embodiment of apparatus functions, and description thereof is omitted.

本发明实施形态的等离子CVD装置,在阴电极2a的等离子放电面为凹状面这一点上,与阴电极2a的等离子放电面为平板状的实施形态1的等离子CVD装置不同。 Plasma CVD apparatus embodiment of the present invention, in a plasma discharge surface of the cathode electrode 2a and the like is that the concave surface, the ion cathode electrode 2a and the like the discharge surface as Embodiment flat plate plasma CVD. 1 different devices.

即,如图8所示,沟槽18内的阴电极2a,具有一对从靠近气体导入口6的位置起使其外侧向斜上方延伸的倾斜面。 That is, as shown in FIG. 8, the cathode electrode within the trench 18 2a, having a pair of outer side so as to extend obliquely upward from the position close to the gas inlet port 6 of the inclined surface. 换句话说,沟槽18的下部,构成为从气体导入口6向被处理基板4的方向逐渐变大的锥状断面。 In other words, the lower portion of the trench 18, the cross section is configured from the gas inlet port 6 becomes gradually larger to the processing direction of the substrate 4 is tapered. 该一对倾斜面,构成阴电极2a的等离子放电面。 The pair of inclined surfaces constituting the cathode surface of the plasma discharge electrode 2a and the like.

例如,在本实施形态中,作为阳电极2b,准备多个断面形状为长方形、长度为300cm的铝棒。 For example, in the present embodiment, as the anode electrode 2B, prepare a plurality of rectangular cross-sectional shape, a length of 300cm rod. 作为阴电极2a,准备大小为110cm×110cm、厚度为3mm的铝板。 As the cathode electrode 2a, ready size 110cm × 110cm, a thickness of the aluminum plate 3mm. 此外,还准备多个断面形状为直角三角形、长度为100cm的铝棒。 In addition, we are preparing a plurality of cross-sectional shape of a right triangle, the length of the rod 100cm. 将断面为三角形的铝棒固定在铝板的表面上,使断面为三角形的铝棒的垂直面与相邻的断面为三角形的铝棒的垂直面彼此相对、且使各个铝棒相互间大致平行地延伸。 The rod of triangular cross section is fixed on the surface of the aluminum plate, that the triangular cross-section aluminum bar adjacent to the vertical plane of the vertical cross section is triangular aluminum bar opposed to each other, and the respective rod substantially parallel to each other extend.

在夹在邻接的三角形断面铝棒的垂直面之间的空间内,充填作为绝缘物的氧化铝。 In a space sandwiched between the adjacent vertical surface of the triangular section of the rod is filled alumina insulator. 由此,以夹在断面为三角形的铝棒中间的形式形成电极间绝缘部分3。 Thus, the cross section is sandwiched in the intermediate portion 3 in the form of a triangle formed between the electrode insulating rod. 将断面为长方形的铝棒配置在电极间绝缘部分3上。 The section between the electrodes disposed on the insulating portion 3 has a rectangular aluminum bars. 按照这种结构,可以将阳电极2b用的断面为长方形的铝棒与用作阴电极2a的铝板及断面为三角形的铝棒电气隔离。 According to this structure, the anode electrode section 2b with rectangular aluminum bar is used as the cathode electrode 2a and the aluminum section may be electrically isolated triangular aluminum bar.

在与阳电极2b延伸的方向大致正交的方向的断面上,阳电极2b及电极间绝缘部分3的宽度d1为5mm,阴电极2a的宽度d2为10mm,电极间绝缘部分3的高度d3为10mm,各阳电极2b及电极间绝缘部分3的间隔为15mm间距。 In the cross-section extending in a direction substantially perpendicular to the direction of the anode electrode 2b, 2b between the anode electrode and the electrode width d1 of the insulating portion 3 is 5mm, the width d2 of the cathode electrode 2a is 10mm, the height of the inter-electrode insulating portion 3 is d3 10mm, among the anode electrode 2b and the electrode interval of the insulating portion 3 is 15mm pitch. 此外,从阴电极2a的端部到阳电极2b的高度d4为5mm,阴电极2a的断面为三角形部分的底部宽度d5为3mm。 Further, from the end 2a of the cathode electrode to the anode electrode 2b height d4 is 5mm, the cathode electrode 2a is a cross-sectional width of the bottom portion of the triangular d5 3mm.

高频电压,施加在电极基板的铝板部分上。 Frequency voltage is applied to the electrode substrate portion of the aluminum plate. 因此,铝板和断面为三角形的铝棒,起着阴电极2a的作用,将由电极间绝缘部分3与其绝缘的铝棒设定为接地电位,并将其用作阳电极2b。 Thus, the aluminum plate, and a triangular cross-section aluminum bar, plays the role of the cathode electrode 2a, an insulating portion between the electrodes 3 by the insulated rod is set to a ground potential and used as an anode electrode 2b.

在用本实施形态的装置制作氮化硅膜的情况下,成膜速度为0.6nm(6)/秒,膜厚的膜内均匀性为±3%。 In the case of using the silicon nitride film production apparatus according to the present embodiment, the deposition rate is 0.6nm (6) / sec, film thickness uniformity was ± 3%. 与实施形态1相比,成膜速度加快的理由,如下所述。 Compared with Embodiment 1, the reason is to accelerate the deposition rate, as described below.

在实施形态1中,用于使两电极2a、2b之间绝缘的电极间绝缘部分3的表面垂直于阴电极2a的面,所以,在阴电极2a的表面上产生的等离子粒子或原子团粒子冲击电极间绝缘部分3后易于消失。 In Embodiment 1, for both the electrodes 2a, plasma particles or radicals particles impact interlayer insulating between 2b the electrode insulating surface of the vertical portion 3, therefore, generated in the surface of the cathode electrode 2a on the surface of the cathode electrode 2a after the inter-electrode insulating portion 3 tends to disappear. 而在本发明的情况下,可以使电极间绝缘部分3的表面与阴电极2a的倾斜面所成的角度为钝角,最好大致为180°。 In the case of the present invention, the inclined surface 2a of the surface of the cathode electrode portion 3 of the angle the inter-electrode insulating obtuse, preferably approximately 180 °. 因此,可以使阴电极2a的表面上产生的等离子粒子或原子团粒子冲击电极间绝缘部分3后消失的概率减低。 The probability of plasma particles or the particles generated radicals Thus, the female electrode 2a rear surface impact insulating portion between the electrodes 3 disappears reduced. 此外,由于阴电极2a的等离子放电面的断面形状为凹形,所以还产生空心阴极效应。 Further, since the cross-sectional shape of the cathode electrode 2a plasma discharge surface is concave, so it generates hollow cathode effect. 因此,通过使阴电极2a的等离子放电面为凹面状,可以在保持膜质等其他性能的同时改善作为装置的处理能力。 Thus, by making the cathode electrode 2a plasma discharge surface is concave, the processing capability can be improved while maintaining device as other properties of the film quality and the like.

在实施形态1和2中,对将本发明的等离子工艺装置应用于等离子CVD装置的情况进行了说明,但本发明的等离子工艺装置并不限定于等离子CVD装置。 In Embodiment 1 and 2, the case where the plasma process apparatus of the invention applied to a plasma CVD apparatus and the like has been described, but a plasma process apparatus of the present invention is not limited to the plasma CVD apparatus. 本发明,也可以应用于利用等离子进行薄膜形成·加工等的等离子处理的所有等离子工艺装置,例如可以适用于干法蚀刻装置或吹灰装置。 All plasma process apparatus of the present invention may be applied to a thin film formed by a plasma-processing such as plasma treatment, for example, can be applied to a dry etching apparatus or the sootblowers.

例如,在应用于干法蚀刻装置的情况下,作为导入处理室5的气体,采用CF4、SF6、Cl2、HCl、BCl3、O2等蚀刻气体。 For example, when applied to a dry etching apparatus, as the gas introduced into the processing chamber 5, the use of CF4, SF6, Cl2, HCl, BCl3, O2 etching gas and the like. 一般来说,在干法蚀刻装置中,在蚀刻动作中,不仅使用通过等离子放电生成的原子团,而且还对被处理基板的被处理面进行离子冲击。 Generally, in the dry etching apparatus, the etching operation, not only the radicals generated by plasma discharge, but also on the surface of the treated substrate to be processed by ion impact. 例如,在被处理基板4的背面另外安装一个离子冲击控制用电极,并将该电极与电源连接而供给规定的电位,从而可以控制离子冲击。 For example, the back surface of the substrate 4 is further installed with a control electrode of the ion impact, and the electrode connected to the power supply potential and the predetermined ion impact can be controlled.

通过采用本发明的装置,可以高效率地使气体离解而提高蚀刻速度,除离解用的等离子部以外还可以调整离子冲击,所以,使其控制性得到改善。 By using the apparatus of the present invention, the gas can be efficiently dissociated to improve the etching rate, in addition to the plasma portion can also be dissociated by adjusting the ion impact, therefore, it is improved controllability.

在实施形态1和2中,对阳电极2b比阴电极2a更接近被处理基板4的情况进行了说明,但也可以使阴电极2a比阳电极2b更接近被处理基板4。 In Embodiment 1 and 2, to the anode electrode than the cathode electrode 2a 2b closer to where the substrate 4 to be processed has been described, it is also possible that the anode electrode than the cathode electrode 2a 2b closer to the substrate 4. 此外,也可以随时使阳电极2b与阴电极2a之间的电位高低关系反转。 Further, the potential level at any time relationship between the anode electrode and the cathode electrode 2a 2b inverted.

在实施形态1和2中,对将气体导入口6设在阴电极2a侧的情况进行了说明,但气体导入口6的设置位置并不限定于此。 In Embodiment 1 and 2, a case where the gas inlet port 6 provided in the cathode electrode 2a side has been described, but the installation position of the gas introduction port 6 is not limited thereto. 例如,也可以将气体导入口6设置成使其位于等离子放电发生单元15与被处理基板4之间。 For example, the gas inlet may be arranged to be located 6 plasma discharge generation unit 15 and between the substrate 4 to be processed. 在这种情况下,将气体沿着被处理基板4的表面方向从气体导入口6导入到处理室5内。 In this case, the gas 4 is introduced along the surface direction of the substrate to be processed from the gas port 6 is introduced into the processing chamber 5.

发明的实施形态3 3 embodiment of the invention.

作为用实施形态1或2的等离子CVD装置制作的电子器件,以下,示出实际制成的有机电致发光元件。 As produced by Embodiment 1 or 2 ions electronics CVD apparatus, shown below the actual organic electroluminescent element made. 图9是示意地表示有机电致发光元件的断面图。 9 is a schematic sectional view showing has organic electroluminescent element.

图9所示的有机电致发光(以下,简称为EL)元件,具有将由铝构成的阳极26、有机空穴输送层25、有机发光层24、由钙构成的阴极23、由氧化铟锡构成的透明电极22在被处理基板4上依次层叠的结构。 Figure 9 is an organic electroluminescent (hereinafter abbreviated as EL) element, an anode 26 constituted by aluminum, 25, 24, a cathode made of a calcium organic hole transport layer of the organic light emitting layer 23, composed of indium tin oxide the transparent electrode 22 on the substrate 4 are sequentially laminated. 作为有机空穴输送层25,采用二元胺电介质((1、1'-bis(4-di-p-tolylamino-phenyl)cyclohexane;TPD),作为有机发光层24,采用8-羟基喹啉络合物(tris(8-hydroxyquinolinato)aluminum(III);Alq3),并分别用真空蒸镀法形成薄膜。 Examples of the organic hole transport layer 25 using a dielectric diamine ((1,1'-bis (4-di-p-tolylamino-phenyl) cyclohexane; TPD), an organic light-emitting layer 24, using 8-hydroxyquinoline complex compound (tris (8-hydroxyquinolinato) aluminum (III); Alq3), and a thin film formed by a vacuum deposition method.

本实施形态的有机EL元件,在外层具有作为保护膜的透明绝缘膜21。 The present embodiment is an organic EL element, the outer layer having a transparent insulating film as a protective film 21. 作为透明绝缘膜21形成氮化硅膜(膜厚500nm(5000))后,即可完成电子器件。 As the transparent insulating film 21 is formed a silicon nitride film (film thickness 500nm (5000)), to complete the electronic device. 以下,将该电子器件称为器件a。 Hereinafter, the electronic device is called the device a. 此外,在氮化硅膜的成膜条件中,被处理基板4的温度为80℃,其他条件与实施形态1和2中所说明过的相同。 Further, the silicon nitride film in the film formation conditions, the temperature of the substrate to be processed 4 was 80 ℃, and other conditions in Embodiment 1 and 2 described in the same.

作为比较例1,采用图33和图34所示的平行平板型装置按相同条件形成氮化硅膜。 As Comparative Example 1, using parallel plate apparatus 33 illustrated in FIG. 34 and FIG silicon nitride film under the same conditions. 将具有该氮化硅膜作为保护膜的电子器件称为器件b。 This silicon nitride film having an electronic device known as a protective film device b. 另外,作为比较例2,制作了不形成保护膜而在上部覆盖了作为替代的封盖用的凹入的玻璃基板并在氮气气氛中密封后的电子器件。 Further, as Comparative Example 2, after an electronic device and sealed in a nitrogen atmosphere with a closure instead of a glass substrate without forming the concave protective film covering the upper portion. 将该电子器件称为器件c。 The electronic device referred to as device c. 器件c的结构,是迄今为止一般使用的结构。 C device structure, the structure is generally used so far.

作为结果,在器件a和器件c中,无论哪一种结构在初期、长期的发光特性上都没有差别。 As a result, in the device and a device (c), whichever structure on the initial and long-term emission characteristics no difference. 因此,按照本发明,无需使用封盖用玻璃,就可以实现备有与封盖用玻璃同样良好的保护膜的电子器件。 Thus, according to the present invention, without using a glass lid, with the closure can be achieved equally well with a glass protective film electronic device. 这种情况意味着本发明的电子器件与使用封盖用玻璃的现有的电子器件相比具有更高的生产率。 This situation means that the electronic device of the present invention using conventional electronic device having a closure glass for higher productivity compared.

另一方面,对于器件b,在动作试验中在发光部上多次产生不发光的黑点,呈现出不良的动作。 On the other hand, for the device B, in the operation test does not emit light generated black spots on the light emitting portion a plurality of times, showing poor operation. 其原因一般认为是,由平行平板型装置制作的氮化硅膜,不适于用作保护膜,大气中的氧气透过了该膜。 The reason is generally believed that a silicon nitride film produced by a parallel plate type apparatus, suitable as a protective film, atmospheric oxygen transmitted through the film.

在本实施形态中,示出包含有机膜的器件。 In the present embodiment, the device shown comprises an organic film. 由于有机膜在100℃以上的热处理过程中将使膜的特性恶化,所以即使在接近100℃的温度下成膜时也最好形成具有良好膜质的保护膜。 Since the organic film will cause deterioration of characteristics of the film at above 100 ℃ heat treatment process, it is also preferable to form a protective film with good film quality even when the film forming temperature close to the temperature of 100 deg.] C. 按照本发明的等离子工艺装置,如实施形态1所示,即使被处理基板4的温度接近100℃,也可以形成高质量的保护膜,所以,通过使用本发明的装置,可以发挥其具有的优势。 Plasma process apparatus according to the present invention, as shown in Embodiment 1, even when the temperature of the substrate to be processed 100 is close to 4 deg.] C, may be a high-quality protective film, therefore, by the use of the device according to the present invention, which has the advantage can play .

作为保护膜,即使被处理基板4的温度为低温也很容易保持良好膜质的氮化硅膜或氮氧化硅膜等含氮的膜是有效的。 As the protective film, even if the processing temperature of the substrate 4 is easy to keep a low temperature silicon nitride film or a silicon oxynitride film, a film containing nitrogen is effective good film quality. 在含氮的膜中,如因膜的结构不够致密而使保护膜特性恶化时,膜内的硅、氮和氢的键合,由于大气中的水分而置换为硅和氧的键合。 Nitrogen in the film, as a result of the structure of the film is not dense enough protection film characteristics deteriorate, the silicon film, nitrogen and hydrogen bonding, the moisture in the atmosphere is replaced with the bonding of silicon and oxygen. 因此,含氮的保护膜,具有可以利用傅里叶变换红外光谱法等检查膜质的优点。 Thus, the protective film containing nitrogen, an advantage can be checked by using a Fourier transform infrared spectroscopy film quality and the like. 特别是,由于即使在生产工序中也可以简单地进行监视,所以具有生产率高的优点。 In particular, even when the production process can be easily monitored, there is an advantage of high productivity.

在本实施形态中,示出了包含有机膜的器件,但对其他器件、例如太阳电池或GaAs系列电子器件等不含有机膜的电子器件,也可以将同样的膜用作保护膜。 In the present embodiment, showing the device comprising an organic film, but the film is free of organic electronic devices to other devices such as a solar cell or series of electronic devices, such as GaAs, may be the same film as the protective film.

在本实施形态的电子器件中,利用实施形态1或2的装置形成作为保护膜的透明绝缘膜21。 In the electronic device of the present embodiment, a transparent insulating film as a protective film 21 formed by the apparatus of Embodiment 1 or 2. 但是,本发明的电子器件,并不限定于用本发明的等离子工艺装置和本发明的制造方法制造的器件。 However, the electronic device of the present invention is not limited to devices fabricated by the process of the present invention, apparatus and method of the present invention is an ion and the like. 只要是在绝缘基板上形成含有硅和氮的绝缘膜、且绝缘膜内的氢结合量为7×1021cm-3以上,则即使是用本发明以外的装置和方法得到的器件也包括在本发明的电子器件内。 As long as the formation of an insulating film containing silicon and nitrogen on the insulating substrate, the insulating film and the amount of hydrogen bonding was 7 × 1021cm-3 or more, even with the device than the devices and methods of the present invention was also included in the present invention, electronics within the device.

另外,只要是在器件的使用中在作为外层形成的绝缘膜的膜内实际上不产生氧键的电子器件,不问其绝缘膜的成膜装置和成膜方法,都包括在本发明的电子器件内。 Further, as long as the device is in use in an electronic device substantially no oxygen bond in the insulating film is formed as the outer layer of the film, irrespective of their film forming apparatus and film forming method of the insulating film, it is included in the present invention. electronics within the device.

按照本发明的等离子工艺装置,能以高的质量且高的气体离解效率对被处理基板4进行成膜·加工。 Plasma process apparatus according to the present invention, capable of high-quality and high-efficiency gas dissociation of the substrate 4-film formation process. 例如,为制作有源驱动型液晶显示器,必需形成采用了非晶形硅膜、氮化硅膜等的TFT部。 For example, for the production of an active drive type liquid crystal display, it must be formed using an amorphous silicon film, a silicon nitride film of the TFT portion. 当用等离子CVD装置制造时,在其制造工序中不会产生等离子损伤,且可以实现高的气体离解效率,从而可以在迄今为止不能实现的参数区域(例如,基板温度为100℃左右)下进行成膜处理。 Performed when the plasma CVD apparatus for manufacturing the like, in the manufacturing process does not produce plasma damage, and can achieve a high gas dissociation efficiency, so that in the parameter area to date can not be achieved (e.g., the substrate temperature is about 100 deg.] C) at deposition process. 因此,可以对迄今为止在使用上存在困难的树脂类基板等进行TFT制作。 Thus, the TFT may be made of the resin substrate or the like in the hitherto difficult to use.

或者,在液晶显示器以外的领域内,作为非晶形硅太阳电池的光变换层,同样可以用等离子CVD法形成非晶形硅膜。 Alternatively, in fields other than liquid crystal displays, a light conversion layer is an amorphous silicon solar cells, can also be formed by plasma CVD method, an amorphous silicon film. 本发明的等离子工艺装置,即使在非晶形硅太阳电池的领域内,也具有同样的效果。 Plasma process apparatus of the present invention, even in the field of amorphous silicon solar cells, also have the same effect.

进一步,对于有机电致发光元件、多晶硅太阳电池、砷化镓类的电子器件等,也可以作为形成用作外层保护膜的透明绝缘膜的装置使用。 Further, for the organic electroluminescent device, polycrystalline silicon solar cells, like gallium arsenide electronic devices, etc., may be used as a means for forming an insulating film as a transparent outer protective film. 特别是,作为有机电致发光元件的保护膜,工艺温度必须在100℃以下。 In particular, as a protection film of an organic electroluminescent device, the process temperature must be below 100 ℃. 按照本发明的装置,即使在这种温度区域内也仍可以进行高质量的成膜处理。 Apparatus according to the invention, even in such a temperature region can still be high-quality film forming process. 此外,对于多晶硅太阳电池,即使在更低的工艺温度下也仍可以制作与以往相同的保护膜。 Further, for polycrystalline silicon solar cells, even at lower process temperatures can still produce the same conventional protective film. 因此,可以确保装置的稳定性及装置维修的简易性。 Thus, it is possible to ensure stability and ease of maintenance means.

在制作有源驱动型液晶显示器的工序中,当对薄膜的形成图案进行干法蚀刻时,通过采用本发明的等离子工艺装置,不仅可以实现对参数的高的控制性,而且可以实现高的气体离解效率。 In the step of producing an active drive type liquid crystal display, when the pattern film is formed by dry etching, by a plasma process apparatus of the present invention, high controllability can be realized not only on the parameters, and can achieve a high gas dissociation efficiency. 此外,在采用吹灰装置的情况下,同样不仅可以实现高的控制性,而且可以实现高的气体离解效率。 Further, in the case of the sootblowers, the same can not only achieve high controllability, and can achieve high efficiency gas dissociation. 两者都能实现高的气体离解效率,因此可以期望提高装置的处理能力。 Both can achieve high efficiency gas dissociation, and therefore it may be desirable to improve the processing capability of the apparatus.

按照本发明,可以实现在外层具有高质量保护膜的电子器件。 According to the present invention, a protective film with high quality can be realized an electronic device in the outer layer. 特别是,在低于100℃的工艺温度下可以形成高质量的保护膜。 In particular, the process temperature is lower than 100 deg.] C may be a high-quality protective film. 因此,可以保持有机膜原有的特性。 Thus, it is possible to maintain the original characteristics of the organic film. 此外,由于不需要以封盖用玻璃基板覆盖元件的上部,所以能以高的生产率制作器件。 Further, since the closure need not be a glass substrate for covering an upper portion of the element, it is possible to produce devices with high productivity. 因此,可以实现更轻的薄型的有机电致发光元件。 Thus, a lighter can be realized a thin organic electroluminescent device.

发明的实施形态4图10示出本发明的实施形态4。 4 embodiment of the invention. FIG. 10 shows an embodiment 4 of the present invention. 图10是将等离子放电发生单元15局部放大后示出的断面图。 FIG 10 is a cross-sectional view of a plasma discharge unit 15 is shown in a partially enlarged occur.

本实施形态4,将实施形态2中的沟槽18内的倾斜面形成为向下方弯曲的曲面部31。 4 of the present embodiment, the inclined surface in the embodiment in the form of two grooves 18 formed in a curved portion 31 curved downward. 就是说,阴电极2a的等离子放电面,具有凹形的曲面部31。 That is, the cathode electrode of the plasma discharge surface 2a, has a concave curved surface portion 31. 此外,通过将曲面部31构成为与相邻的各绝缘部分3的侧面连接的圆弧面,将沟槽18构成为U字形。 Further, by the curved surface portion 31 is configured with an arcuate surface adjacent to the respective side portion of the insulation 3 is connected to the U-shaped groove 18 is configured.

因此,按照本实施形态4,与实施形态2的具有锥状断面的倾斜面的结构相比,可以增大沟槽18的断面积。 Thus, according to the present embodiment 4, the embodiment of the structure having the inclined surface of the tapered section 2 can be increased compared sectional area of ​​the channel 18. 就是说,可以增大阴电极2a附近的等离子区域。 That is, the plasma can be increased in the region near the cathode electrode 2a. 其结果是,可以增大每单位气体流量的气体裂解量及气体裂解效率,所以,可以使成膜率及膜质得到提高。 As a result, the gas can be increased cleavage amount per unit of gas flow rate and the gas cracking efficiency, it is possible that the film formation rate and film quality is improved.

可是,当从气体导入口6导入的气体流动受到阻滞时,在该阻滞区域内很容易产生粉末。 However, when the gas flow is retarded from a gas introducing inlet 6, it is easy to produce powders in the block area. 与此不同,在本实施形态中,由于气体导入口6周围的阴电极2a的表面形成为凹形的曲面,所以,可使气体流畅地流动,因而可以抑制粉末的产生。 In contrast to this, in the present embodiment, since the surface 2a of the cathode electrode 6 is formed around the gas inlet opening is concave curved surface, so the gas can flow smoothly, it is possible to suppress generation of powder. 其结果是,可以抑制粉末混入膜内,因而可以使膜质提高。 As a result, a powder mixed into the film can be suppressed, it is possible to improve the film quality.

这里,为评价所形成的膜的膜质及成膜率,在表2内列出对SiN膜的残留应力即膜应力和蚀刻率进行实际测定后的值。 Here, the film quality and deposition rate of the film formed was evaluated, a value obtained by actual measurement are listed in Table residual stress in the SiN film 2 and the etching rate i.e., film stress.

表2 Table 2

将图8所示的上述实施形态2的锥状倾斜面的结构作为实施例1,并将图10所示的实施形态4的具有曲面部31的结构作为实施例2。 The tapered inclined surface of the structure above-described embodiment shown in FIG. 82 as in Example 1, and 10 in the embodiment shown in FIG. 4 has a structure curved surface portion 31 as in Example 2. 然后,对实施例1和2进行了膜应力和蚀刻率的测定。 Then, Examples 1 and 2 were measured and the etching rate of the film stress. 对于膜应力,在硅片上形成SiN(氮化硅)膜,并用众所周知的应力测定装置测定了该成膜前后的基板的翘曲度。 For the film stress, forming the SiN (silicon nitride) film on a silicon wafer, the warpage of the substrate was measured before and after the deposition by means well known in the stress measurement. 对于蚀刻率,利用稀释到1/100的BHF(缓冲氢氟酸)并用众所周知的台阶高差测定装置测定了硅片上的SiN的蚀刻率(常温时)。 For the etching rate, the use of BHF 1/100 diluted (buffered hydrofluoric acid) apparatus and the measured etch rate of SiN (normal temperature) on a silicon wafer was measured by a known step difference.

这时,实施例2的沟槽18的断面积,为实施例1的2倍。 In this case, the groove sectional area embodiment of Example 2 18 of Example 1 twice. 另外,膜应力,实施例2比实施例1约小16%、蚀刻率约小5.5%。 Further, the film stress, Example 2 to Example 1 from about 16% smaller, the etching rate of about 5.5% smaller. 即,通过将等离子放电面形成为凹形的曲面,可以使膜应力减低,同时可以使蚀刻率降低,从而使膜更为致密。 I.e., a concave curved surface is formed by a plasma discharge surface, can reduce film stress, while the etching rate is reduced so that the film is denser.

发明的实施形态5图11示出本发明的实施形态5。 Embodiment 5 of the invention Figure 11 shows a fifth embodiment of the present invention. 图11是将等离子放电发生单元15局部放大后示出的与图10相当的图。 10 corresponding to FIG. 11 is a view showing the view of a partially enlarged generation unit 15 to the plasma discharge.

本实施形态,与上述实施形态2不同,通过增大沟深对沟宽的比率而使沟槽18变得更深。 The present embodiment, different from the above embodiment 2, the groove depth becomes deeper by increasing the ratio of the groove width of the groove 18. 即,沟槽18的深度大于沟宽。 That is, the depth of the groove 18 is greater than the groove width. 进一步,沟槽18的侧面和底面,由曲面部31连续地连接,按照这种结构,也可以取得与上述实施形态4相同的效果。 Further, the groove bottom surface 18 and side surfaces of the continuously curved surface portion 31 connected by, in this configuration, can achieve the same effect of the above-described fourth embodiment. 此外,在本实施形态中,与上述实施形态4相比,沟槽18的断面积更大,所以,可以提高气体的裂解量及裂解效率,因而可以使膜质进一步提高。 Further, in the present embodiment, as compared with the fourth embodiment, the groove 18 is larger cross-sectional area, it is possible to increase the amount of cleavage and cleavage efficiency of the gas, it is possible to further improve film quality.

发明的实施形态6图12示出本发明的实施形态6。 6 embodiment of the invention. FIG. 12 shows a sixth embodiment of the present invention. 图12是将等离子放电发生单元15局部放大后示出的与图10相当的图。 FIG 12 is a rear discharge plasma generation unit 15 shown partially enlarged in FIG. 10 corresponding to FIG.

本实施形态,与上述实施形态4不同,不仅将沟槽18内而且将阳电极2b的表面也构成为曲面。 The present embodiment, different from the above embodiment 4, only the inner surface of the trench 18 and the anode electrode 2b also forms a curved surface. 就是说,阴电极2a的等离子放电面与阳电极2b的等离子放电面,构成为连续曲面的一部分。 That is, the cathode electrode 2a plasma discharge a plasma discharge surface and the surface of the anode electrode 2b, which form part of a continuous curved surface. 上述连续的曲面,由阴电极2a的凹形曲面部31、在绝缘部分3的侧面形成的曲面部32、阳电极2b的凸形曲面部33构成。 The continuous curved surface, the curved surface portion on the side surface 3 of the insulating portion 32 is formed, 2b of the anode electrode 33 is constituted by a convexly curved portion 2a of the cathode electrode 31 concave curved portion. 换句话说,等离子放电发生单元15中的朝向被处理基板4一侧的表面,形成为连续的波状曲面。 In other words, the plasma generating unit discharge treated surface side of the substrate 4 in the direction 15, formed as a continuous wavy surface.

在上述实施形态4中,虽然阳电极2b及绝缘部分3的形状简单因而易于形成,但在阳电极2b的棱边部(角部)电场集中因而有可能产生异常放电。 In this fourth embodiment, although the shape of the anode electrode 2b and the insulating portion 3 thus easily formed simply, but at the edge portion 2b of the anode electrode (corner portion) electric field concentration and therefore abnormal discharge may occur. 与此不同,在本实施形态中,将阳电极2b制成曲面状,所以可以防止电场集中,因而可以抑制因异常放电而产生粉末。 In contrast to this, in the present embodiment, the anode electrode 2b made of a curved surface shape, it is possible to prevent the concentration of electric field, it is possible to suppress abnormal discharge generated powder. 其结果是,可以使膜质进一步提高。 As a result, the film quality can be further improved.

发明的实施形态7图13示出本发明的实施形态7。 7 embodiment of the invention. FIG. 13 shows a seventh embodiment of the present invention. 图13是将等离子放电发生单元15局部放大后示出的与图10相当的图。 10 corresponding to FIG. 13 is a view showing the view of a partially enlarged generation unit 15 to the plasma discharge.

本实施形态,与上述实施形态2不同,在气体导入口6的形成位置设有凹入部35。 The present embodiment, different from the above embodiment 2, is provided with a concave portion 35 is formed at the position of the gas introduction port 6. 换句话说,在阴电极2a的等离子放电面上,在沟槽18内沿沟槽方向排成成一列地形成着多个凹入部35,在凹入部35的底部形成气体导入口6。 In other words, the surface discharge plasma cathode electrode 2a or the like, arranged in the groove direction along the groove 18 to be formed with a plurality of recessed portions 35 formed at the gas inlet port 6 of the bottom of the concave portion 35.

因此,按照本实施形态,可以由各凹入部35产生空心阴极效应,所以,可以使从阴电极2a飞出的电子量增大,因而能进一步促进气体的裂解。 Thus, according to this embodiment, the hollow cathode effect may be generated by the concave portion 35, it is possible that the amount of flying out of electrons from the cathode electrode 2a is increased, thereby further promoting the cracked gas. 即,可以增大每单位气体流量的裂解量及裂解效率,因而可以使成膜率及膜质得到提高。 That is, the amount of cleavage can be increased and the cleavage efficiency per unit of gas flow rate, and thus the film formation rate and film quality can be improved. 进一步,由于将喷出气体的气体导入口6设在凹入部35的底部,所以在凹入部35内也就不用附着不需要的膜了。 Further, since the discharge gas is a gas introduction port 6 provided at the bottom of the concave portion 35, it is also within the recessed portion 35 without unnecessary film adhered.

发明的实施形态8图14示出本发明的实施形态8。 8 embodiment of the invention. FIG. 14 illustrates an eighth embodiment of the present invention. 图14是将等离子放电发生单元15局部放大后示出的与图10相当的图。 FIG 14 is a plasma discharge corresponding to FIG. 10 and shown in a partially enlarged view of cell 15 occurs. 本实施形态,与上述实施形态2不同,以与实施形态7同样的方式,在气体导入口6的形成位置设置了凹入部35。 The present embodiment, different from the above embodiment 2, in the same manner as in Embodiment 7, the position of the gas introduction port 6 is formed a recessed portion 35 is provided.

按照这种结构,可以取得与上述实施形态7相同的效果。 According to this structure, it is possible to achieve the same effect of the above-described seventh embodiment. 除此之外,由于可以通过增大沟槽18的断面积而增大等离子区域,所以可以使成膜率及膜质进一步提高。 Besides, since the plasma region can be increased by increasing the cross-sectional area of ​​the channel 18, so that the film formation rate and film quality can be further improved.

发明的实施形态9图15示出本发明的实施形态9。 Embodiment 9 of the invention, FIG 15 shows a ninth embodiment of the present invention. 图15是将等离子放电发生单元15放大后示出的立体图。 FIG 15 is a perspective view showing a plasma discharge out of the amplifying unit 15 after the occurrence.

本实施形态,与上述实施形态2不同,在阴电极2a的沟槽18内的倾斜面上形成了多个凹入部35。 The present embodiment, different from the above embodiment 2, the inclined surface of the groove 18 of the cathode electrode 2a is formed a plurality of concave portions 35. 凹入部35,沿沟槽18的宽度方向及沟长方向分别并排设置。 Concave portions 35, the groove width direction and the longitudinal direction of the grooves 18 are arranged side by side.

因此,按照本实施形态,使大致按V字形形成的阴电极2a作为整体产生空心阴极效应,同时还由阴电极2a的等离子放电面的各凹入部35产生空心阴极效应,所以,可以放射出更多的电子。 Thus, according to this embodiment, so that substantially according to the cathode electrode a V-shape is formed 2a as a whole to produce the hollow cathode effect, and also generates hollow cathode effect of each of the concave portions plasma discharge surface of the cathode electrode 2a and the like 35, it is possible to emit more and more electronic. 其结果是,可以有效地使气体裂解,因而能使膜质提高。 As a result, the gas can be efficiently lysed, and thus can improve the film quality.

同时,在从等离子放电面起规定高度的区域内,形成不是等离子区域的阴极覆盖部。 Meanwhile, in the plasma discharge is within a predetermined height from the surface region covering the portion not forming the cathode of the plasma region. 由于从气体导入口6供给的气体以高速在阴极覆盖部内通过,所以即使在等离子放电面上形成了多个凹入部35也不会由等离子区域阻滞气体的流动。 Since the inlet gas supplied from the gas 6 at a high speed in the cathode portion by a cover, so that even if the surface discharge plasma forming a plurality of concave portions 35 flow is not blocked by the plasma gas region.

发明的实施形态10图16示出本发明的实施形态10。 Embodiment 10 of the invention Figure 16 shows a tenth embodiment of the present invention. 图16是将等离子放电发生单元15放大后示出的立体图。 FIG 16 is a perspective view showing a plasma discharge out of the amplifying unit 15 after the occurrence.

本实施形态,与上述实施形态9中的阴电极2a的等离子放电面不同,不是设置凹入部35,而是进行了喷砂加工。 The present embodiment, the ion discharge surface 2a of the cathode electrode or the like different from the ninth embodiment, a concave portion 35 is not provided, but instead a sandblasting. 即,阴电极2a的等离子放电面,表面粗糙度较大,从微观上看,在等离子放电面上形成着许多凹凸点。 I.e., the cathode electrode of the plasma discharge surface 2a, the larger the surface roughness, microscopically, formed in the plasma discharge surface many irregularities point. 因此,通过对阴电极2a的等离子放电面进行喷砂加工,可以产生空心阴极效应,因而能使膜质提高。 Thus, the surface of the cathode of a plasma discharge electrode 2a or the like blasting, may generate hollow cathode effect, and thus can improve the film quality.

发明的实施形态11图17和图18示出本发明的实施形态11。 11 embodiment of the invention. FIG. 17 and FIG. 18 illustrates an embodiment 11 of the present invention. 图17是将等离子放电发生单元15放大后示出的立体图,图18是表示等离子放电发生单元15的俯视图。 FIG 17 is a plasma discharge unit 15 occurred after an enlarged perspective view showing, and FIG. 18 is a plan view of the plasma discharge unit 15 occurred.

本实施形态,对阴电极2a,在相邻绝缘部分3之间在沟槽18的底部沿沟的方向排列设置了多个开口朝向被被处理基板4的凹部37。 The present embodiment, a cathode electrode 2a, between adjacent insulating portion 3 in the direction of the bottom of the trench groove 18 are arranged along a plurality of openings 37 toward the concave portion 4 of the substrate to be processed. 换句话说,本实施形态,与上述实施形态2不同,沿沟的方向按规定间隔设置了分隔沟槽18的分隔部38。 In other words, in this embodiment, different from the above embodiment 2, the direction of the grooves are provided at predetermined intervals partition groove 18 of the partition 38.

即,凹部37,开口形状为四角形,由沟槽18的底面、阴电极2a的一对倾斜面、分隔部38的一对分隔面构成。 That is, the concave portion 37, the opening shape is rectangular, the bottom surface of the groove 18, the cathode electrode of the pair of inclined surfaces 2a, a pair of spaced side portions 38 constituting the partition. 分隔部38的分隔面,以使分隔部38的下部向沟方向的两侧扩展的方式倾斜。 Partition separating plane 38 to the lower partition portion 38 extended to both sides of the inclined groove in the direction of the way. 因此,凹部37的开口断面,越向下方越小。 Therefore, the opening cross section of the concave portion 37 decreases toward the bottom.

另外,设在各绝缘部分3之间的多个凹部37,如图18所示,从被处理基板4的法线方向看去时按交错状配置。 Further, the plurality of recessed portions provided between the insulating portion 3 37, 18, arranged in a staggered when viewed from the normal direction of the substrate 4 is processed. 在凹部37内,沿沟的方向排列的多个气体导入口6,在凹部37内的沟槽18的底部和分隔部38的分隔面上连续地设置。 In the recess 37, a plurality of gas arranged in the direction of the groove inlet 6, a bottom surface of the partition and the partition portion 18 in the groove 37 of the recessed portion 38 is continuously provided.

因此,按照本实施形态,可以增大阴电极2a的表面积,所以可以提高气体的裂解效率及成膜率。 Thus, according to this embodiment, it is possible to increase the surface area of ​​the cathode electrode 2a, the cleavage efficiency can be improved and the deposition rate of the gas. 此外,由于使凹部37按交错状配置,所以可以使在被处理基板4上形成的膜的质量变得均匀。 Further, since the recessed portion 37 by the staggered arrangement, it is possible to make the quality of the film formed on the substrate 4 becomes uniform. 凹部的形状,不限于四角形,例如,也可以由八角形等多角形构成。 Shape of the concave portion is not limited to rectangular, for example, it may be formed of octagonal polygon.

发明的实施形态12图19和图20示出本发明的实施形态12。 12 embodiment of the invention. FIG. 19 and FIG. 20 shows a twelfth embodiment of the present invention. 图19是将等离子放电发生单元15放大后示出的立体图,图20是表示等离子放电发生单元15的俯视图。 FIG 19 is a plasma discharge unit 15 occurred after an enlarged perspective view showing, and FIG. 20 is a plan view of the unit 15 of the plasma discharge occurs.

本实施形态,与上述实施形态11不同,将凹部37的开口形状变更为圆形。 The present embodiment, 11 different from the above embodiment, the opening shape changing portion 37 has a circular recess. 即,在沟槽18的底部,沿沟的方向排列设置着多个研鉢状的凹部37。 That is, at the bottom of the trench 18 are arranged along the direction of the recessed groove portions over 37 mortar-shaped. 邻接的各凹部37之间,设置着微小的间隔。 Each adjacent recess 37, is provided with a minute gap. 另外,在各凹部37的底部,沿沟的方向例如排列形成2个气体导入口6。 Further, the bottom of each recessed portion 37, are arranged along the direction of the groove is formed, for example, two gas inlet 6.

如上所述,即使将凹部37的开口形状变更为圆形,也可以取得与上述实施形态11相同的效果。 As described above, even if changing the shape of the opening of the recess 37 is circular, may achieve the same effect as the above embodiment 11. 除此之外,还使凹部37的内部由曲面构成,所以,可以使从气体导入口6导入的气体流畅地流动,另外,凹部37的开口形状,并不限于正圆形,也可以是椭圆等圆形。 In addition, further inside the recess 37 so that a curved surface, it is possible that the gas introducing inlet 6 flows smoothly from the gas, in addition, the opening shape of the recess 37 is not limited to circular and may be oval like circular. 此外,对沟槽部18也可以在沟宽方向上设置多个凹部37。 Further, recesses may be provided a plurality of grooves 37 in the width direction of the groove portion 18.

发明的实施形态13图21和图22示出本发明的实施形态13。 EMBODIMENTS OF THE INVENTION FIGS. 21 and 13 FIG 22 illustrates Embodiment 13 of the present invention. 图21是表示等离子放电发生单元15及被处理基板4的立体图。 21 is a perspective view like FIG. 15 and the substrate 4 generating a plasma discharge unit. 图22是将等离子放电发生单元15局部放大后示出的断面图, FIG 22 is a sectional view of a plasma discharge generation unit 15 shown partially enlarged,

本实施形态,与上述实施形态2不同之处在于,设在相邻绝缘部分3之间的各阴电极2a,在绝缘部分3的左右两侧相互电气隔离。 The present embodiment, the above-described second embodiment except that each cathode electrode disposed in the insulating portion 3 between adjacent 2a, the left and right sides of each insulating isolation portion 3 electrically. 即,如图21和图22所示,等离子放电发生单元15,由与被处理基板4相对的绝缘板40、在绝缘板40上按条状设置绝缘部分3、设在相邻各绝缘部分3之间的阴电极2a、设在各绝缘部分3的上端的阳电极2b构成。 That is, as shown in FIGS. 21 and 22, plasma discharge generation unit 15, and the substrate 4 by the opposing insulating plate 40, on the insulating plate 40 by strip-shaped insulating portion 3, provided in respective adjacent insulating portion 3 between the cathode electrode 2a, provided at the upper end of each of the insulating portion 3 constituting the anode electrode 2b.

因此,如图22所示,在本实施形态中,与上述实施形态2一样,沟槽18,由彼此面对的绝缘层3及阳电极2b的2个侧面和阴电极2a的上表面构成。 Thus, as shown in FIG 22, in the present embodiment, as in the above Embodiment 2, the groove 18, and the upper surface is constituted by two side anode electrode and a cathode electrode 2b of the insulating layer 3 2a face each other. 气体导入口6,以贯通阴电极2a及绝缘板40的形式形成。 Gas inlet 6, a cathode electrode is formed as a through-2a and the insulating plate 40. 另外,在阴电极2a上,具有与上述实施形态2相同的倾斜的等离子放电面。 Further, in the cathode electrode 2a, a plasma discharge having a surface and the embodiment 2, the same inclination. 按照这种结构,可以取得与上述实施形态2相同的效果。 According to this structure, it is possible to achieve the same effect of the above-described second embodiment.

发明的实施形态14图23示出本发明的实施形态14。 Embodiment 14 of the invention Figure 23 shows an embodiment 14 of the present invention. 图23是表示等离子放电发生单元15局部放大后示出的断面图。 FIG 23 is a cross-sectional view showing the like after the generation unit 15 shown partially enlarged plasma discharge.

本实施形态,与上述实施形态13不同之处在于,阴电极2a的等离子放电面,象实施形态1一样,由与被处理基板4平行的平面构成。 The present embodiment, the above-described Embodiment 13 except that the negative electrode surface 2a of the plasma discharge, the same as Embodiment 1, is composed of the plane parallel to the substrate 4 to be processed. 即,各阴电极2a,在绝缘部分3的左右两侧相互电气隔离。 That is, each of the cathode electrodes 2a, left and right sides of the insulating spacer are electrically portion 3. 按照这种结构,可以取得与上述实施形态1相同的效果。 According to this structure, the above embodiment can obtain the same effect 1.

发明的实施形态15图24和图25示出本发明的实施形态15。 15 embodiment of the invention. FIG. 24 and FIG. 25 illustrates an embodiment 15 of the invention. 图24和图25是将等离子放电发生单元15局部放大后示出的断面图。 24 and FIG. 25 is a sectional view illustrating a partially enlarged after the generation unit 15 to the plasma discharge.

在本实施形态中,与上述实施形态13和14不同,没有设置绝缘板40。 In the present embodiment, the above-described embodiment, and 14 different 13, the insulating plate 40 is not provided. 即,图24,相当于图22所示的上述实施形态13的等离子放电发生单元15的上侧部分。 That is, FIG 24, corresponds to the embodiment shown in FIG. 22 in the upper portion 15 of the plasma discharge unit 13 occurred. 另一方面,图25,相当于图23所示的上述实施形态14的等离子放电发生单元15的上侧部分。 On the other hand, FIG. 25, corresponding to the upper portion of the unit 15 in the above-described embodiment shown in FIG. 23 the plasma discharge 14 occurs. 按照这种结构,也可以取得与上述实施形态1或2相同的效果。 According to this structure, it may acquire the above-described Embodiment 1 or 2 same effect.

发明的实施形态16图26和图27示出本发明的实施形态16。 16 embodiment of the invention. FIG. 26 and FIG. 27 illustrates an embodiment 16 of the present invention. 图26和图27是将等离子放电发生单元15局部放大后示出的断面图,图26表示气体压力较高时的放电路径,而图27表示气体压力较低时的放电路径。 26 and FIG. 27 is a plasma discharge unit 15 after the occurrence of a partially enlarged cross-sectional view illustrated in FIG. 26 shows the discharge path of the high gas pressure, and FIG. 27 shows the discharge path when the gas pressure is low.

本实施形态,在气体导入口6的配置点上与上述实施形态2不同。 This embodiment, the gas inlet disposed in the point 6 is different from Embodiment 2 above. 即,在与条状的绝缘部分3的长度方向交叉的方向上排列设置着多个气体导入口6。 That is, in a direction intersecting the longitudinal direction of the strip-shaped insulating portion 3 are arranged with a plurality of gas inlet 6. 多个气体导入口6,如图26所示,最好在与条状的绝缘部分3的长度方向正交的方向(就是说,沟宽方向)上按规定的间隔排列。 A plurality of gas inlet port 6, as shown in Figure 26, is preferably arranged at predetermined intervals in a direction orthogonal to the longitudinal direction of the strip-shaped insulating portion 3 (that is, the groove width direction). 这些沿沟宽方向排列的一组气体导入口6,按规定的间隔,沿沟长方向配置多组。 These grooves are arranged along the width direction of a set of gas inlet 6, at predetermined intervals, a plurality of sets arranged along the channel length direction. 因此,从被处理基板4的法线方向看去时,气体导入口6,在沟槽18的底部按行列状配置。 Thus, when the normal direction of the substrate 4 to be processed is viewed from the gas inlet 6, arranged in rows and columns to form at the bottom of the trench 18.

另外,设在各倾斜面上的气体导入口6,构成为使其以彼此平行的方向喷出气体。 Further, each of the inclined surfaces provided at the gas inlet port 6, is configured so that a direction parallel to each other in a discharge gas. 就是说,各气体导入口6,通过沿被处理基板4的法线方向穿通阴电极2a而构成。 That is, each of the gas inlet 6, to be treated by the normal to the substrate 4 along the cathode electrode 2a through constituted.

可是,当将气体导入口6在沟槽18的中央沿沟长方向排成1列形成时,沟宽方向上的气流分布,在沟的中央为层流因而速度较快,但沟宽方向的两侧为紊流因而有可能变得比较迟缓。 However, when the gas introduction port 6 is formed in a groove arranged in the longitudinal direction of the central groove 18, the air distribution groove width direction groove at the center of a laminar flow and therefore faster, but the groove width direction, both sides of the turbulence which is likely to become relatively slow. 因而存在着该气流的紊流导致粉末的产生的问题。 Thus there is the air flow turbulence problems of lead powder.

与此不同,在本实施形态中,沿沟宽方向按规定的间隔设置以彼此平行的方向喷出气体的多个气体导入口6,同时还按规定的间隔沿沟长方向设置了多个气体导入口6,所以,可以使沟槽18的内部的气流为均匀的层流。 In contrast to this, in the present embodiment, in the groove width direction at predetermined intervals in a direction parallel to each other a plurality of gas discharge gas inlet port 6, and also in an interval of a predetermined channel length direction is provided a plurality of gas inlet 6, it is possible to make the air flow inside the groove 18 of a uniform laminar flow. 即,按照本实施形态,可以通过抑制等离子区域内的紊流的发生而减少粉末的产生,所以可以使膜质得到提高。 That is, according to this embodiment, the powder may be produced by reducing the occurrence of turbulence in the suppression area of ​​plasma, the film quality can be improved.

进一步,如本实施形态所示,通过在沟槽18的宽度方向设置多个气体导入口6,可以增大气体导入口6的总数。 Further, as shown in this embodiment, by providing a plurality of grooves 18 in the width direction of gas introduction port 6, the total number of gas inlet port 6 can be increased. 因此,在将一定流量的气体导入处理室5内时,可以减小气体的流入速度,所以,可以延长沟槽18内的等离子区域的气体滞留时间。 Thus, when a certain flow rate of the gas introduced into the processing chamber 5, a gas inflow rate can be reduced, it is possible to extend the gas ions within the trench region 18, and the like residence time. 此外,还可以使以彼此平行的方式从多个气体导入口6喷出的气体分别沿着等离子放电的路径流动。 In addition, it is also possible to flow in a path parallel to each other discharge gas introduction port 6 from a plurality of gas discharge, respectively, along the plasma. 其结果是,能很好地促进气体的离解和裂解,所以可以使膜质得到提高。 As a result, well promote cleavage and dissociation of the gas, so that the film quality can be improved.

发明的实施形态17图28是示意地表示本发明实施形态17的等离子CVD装置的断面图,边参照图28边对实施形态17的等离子CVD装置进行说明。 17 embodiment of the invention. FIG. 28 is a schematic embodiment of the present invention, showing a sectional view of a plasma CVD apparatus or the like form 17, the edge 28 of FIG plasma CVD apparatus 17 of the embodiment will be described with reference to.

在本实施形态17中,将上述实施形态16中的沟槽18内的倾斜面形成为向下方弯曲的曲面部31。 In the present embodiment 17, the inclined surface 16 in the above-described embodiment, a trench 18 is formed as a curved portion 31 curved downward. 就是说,阴电极2a的等离子放电面,具有凹形的曲面部31。 That is, the cathode electrode of the plasma discharge surface 2a, has a concave curved surface portion 31. 此外,通过将曲面部31构成为与相邻绝缘部分3的各侧面连接的圆弧面,将沟槽18构成为U字形。 Further, the curved surface portion 31 is formed by an arc surface adjacent to the side connected to each of the insulating portion 3, the groove 18 is configured to be U-shaped.

因此,按照本实施形态,与上述实施形态16的具有锥状断面的倾斜面的结构相比,可以增大沟槽18的断面积。 Thus, according to this embodiment, compared with the structure having the inclined surface of the tapered section 16 of the above embodiment can be increased sectional area of ​​the channel 18. 就是说,可以增大阴电极2a附近的等离子区域。 That is, the plasma can be increased in the region near the cathode electrode 2a. 其结果是,可以增大每单位气体流量的气体裂解量及气体裂解效率,所以,可以使成膜率及膜质得到提高。 As a result, the gas can be increased cleavage amount per unit of gas flow rate and the gas cracking efficiency, it is possible that the film formation rate and film quality is improved.

可是,当从气体导入口6导入的气体流动受到阻滞时,在该阻滞区域内很容易产生粉末。 However, when the gas flow is retarded from a gas introducing inlet 6, it is easy to produce powders in the block area. 与此不同,在本实施形态中,由于气体导入口6周围的阴电极2a的表面形成为凹形的曲面,所以,可使气体流畅地流动,因而可以抑制粉末的产生。 In contrast to this, in the present embodiment, since the surface 2a of the cathode electrode 6 is formed around the gas inlet opening is concave curved surface, so the gas can flow smoothly, it is possible to suppress generation of powder. 其结果是,可以抑制粉末混入膜内,因而可以使膜质提高。 As a result, a powder mixed into the film can be suppressed, it is possible to improve the film quality.

这里,为评价所形成的膜的膜质及成膜率,在表3内列出对SiN膜的残留应力即膜应力和蚀刻率进行实际测定后的值。 Here, the film quality and deposition rate of the film formed was evaluated, a value obtained by actual measurement of the residual stress in the SiN film are listed in Table 3 i.e., the etching rate and film stress.

表3 table 3

将在图28的等离子放电发生单元15内在沟槽18的中央沿沟长方向排成1列地形成气体导入口6的结构作为实施例3,并将图28所示的本实施形态的具有曲面部31的结构作为实施例4。 FIG discharge ion generation unit 28 like the central groove 15 in the inner grooves 18 are aligned in the longitudinal direction of the gas inlet structure 6 is formed in a manner as Example 3, and as shown in FIG. 28 of the present embodiment having a curved surface structure portion 31 as in Example 4. 然后,对实施例3和4进行了膜应力和蚀刻率的测定。 Then, for Example 3 and 4 were measured etching rate and film stress. 对于膜应力,在硅片上形成SiN(氮化硅)膜,并用众所周知的应力测定装置测定了该成膜前后的基板的翘曲度。 For the film stress, forming the SiN (silicon nitride) film on a silicon wafer, the warpage of the substrate was measured before and after the deposition by means well known in the stress measurement. 对于蚀刻率,利用稀释到1/100的BHF(缓冲氢氟酸)并用众所周知的台阶高差测定装置测定了硅片上的SiN的蚀刻率(常温时)。 For the etching rate, the use of BHF 1/100 diluted (buffered hydrofluoric acid) apparatus and the measured etch rate of SiN (normal temperature) on a silicon wafer was measured by a known step difference.

这时,实施例4的多个气体导入口6的合计开口面积,为实施例3的5倍。 In this case, a plurality of gas introduction Example 4 total opening area of ​​the port 6, 3 to 5 times the Example. 另外,膜应力,实施例4比实施例3约小7.8%、蚀刻率约小3.7%。 Further, the film stress, Example 4 less than about 7.8% Example 3 embodiment, a small etching rate of about 3.7%. 即,通过将等离子放电面形成为凹形的曲面,可以使膜应力减低,同时可以使蚀刻率降低,从而使膜更为致密。 I.e., a concave curved surface is formed by a plasma discharge surface, can reduce film stress, while the etching rate is reduced so that the film is denser.

发明的实施形态18图29是示意地表示本发明实施形态18的等离子CVD装置的断面图,边参照图29边对实施形态18的等离子CVD装置进行说明。 18 embodiment of the invention. FIG. 29 is a schematic embodiment of the present invention, showing a sectional view of a plasma CVD apparatus or the like form 18, the edge 29 of the plasma CVD apparatus 18 of the embodiment will be described with reference to.

本实施形态,与上述实施形态17不同,通过增大沟深对沟宽的比率而使沟槽18变得更深。 The present embodiment, 17 different from the above embodiment, the groove depth becomes deeper by increasing the ratio of the groove width of the groove 18. 即,沟槽18的深度大于沟宽。 That is, the depth of the groove 18 is greater than the groove width. 进一步,沟槽18的侧面和底面,由曲面部31连续地连接,按照这种结构,也可以取得与上述实施形态17相同的效果。 Further, the groove bottom surface 18 and side surfaces of the continuously curved surface portion 31 connected by, in this configuration, can achieve the same effect of the above embodiment 17. 此外,在本实施形态中,与上述实施形态17相比,沟槽18的断面积更大,所以,可以提高气体的裂解量及裂解效率,因而可以使膜质进一步提高。 Further, in the present embodiment, as compared with the embodiment 17, a larger cross-sectional area of ​​the channel 18, it is possible to increase the amount of cleavage and cleavage efficiency of the gas, it is possible to further improve film quality.

发明的实施形态19图30示出本发明的实施形态19。 Embodiment 19 of the invention Figure 30 shows Embodiment 19 of the present invention. 图30是将等离子放电发生单元15局部放大后示出的断面图。 FIG 30 is a sectional view of a plasma discharge generation unit 15 shown partially enlarged.

本实施形态,与上述实施形态17不同,不仅将沟槽18内而且将阳电极2b的表面也构成为曲面。 The present embodiment, 17 different from the above embodiment, only the inner surface of the trench 18 and the anode electrode 2b also forms a curved surface. 就是说,阴电极2a的等离子放电面与阳电极2b的等离子放电面,构成为连续曲面的一部分。 That is, the cathode electrode 2a plasma discharge a plasma discharge surface and the surface of the anode electrode 2b, which form part of a continuous curved surface. 上述连续的曲面,由阴电极2a的凹形曲面部31、在绝缘部分3的侧面形成的曲面部32、阳电极2b的凸形曲面部33构成。 The continuous curved surface, the curved surface portion on the side surface 3 of the insulating portion 32 is formed, 2b of the anode electrode 33 is constituted by a convexly curved portion 2a of the cathode electrode 31 concave curved portion. 换句话说,等离子放电发生单元15中的朝向被处理基板4一侧的表面,形成为连续的波状曲面。 In other words, the plasma generating unit discharge treated surface side of the substrate 4 in the direction 15, formed as a continuous wavy surface.

在上述实施形态17中,虽然阳电极2b及绝缘部分3的形状简单因而易于形成,但在阳电极2b的棱边部(角部)电场集中因而有可能产生异常放电。 17 In the above embodiment, although the shape of the anode electrode 2b and the insulating portion 3 thus easily formed simply, but at the edge portion 2b of the anode electrode (corner portion) electric field concentration and therefore abnormal discharge may occur. 与此不同,在本实施形态中,将阳电极2b制成曲面状,所以可以防止电场集中,因而可以抑制因异常放电而产生粉末。 In contrast to this, in the present embodiment, the anode electrode 2b made of a curved surface shape, it is possible to prevent the concentration of electric field, it is possible to suppress abnormal discharge generated powder. 其结果是,可以使膜质进一步提高。 As a result, the film quality can be further improved.

发明的实施形态20图31是示意地表示本发明实施形态20的等离子CVD装置的立体图。 20 embodiment of the invention. FIG. 31 is a schematic perspective view showing a plasma CVD apparatus or the like form 20 of the embodiment of the present invention. 在图31中,为便于说明,将阴电极2a的剖面线的图示省略。 In FIG. 31, for convenience of explanation, the cathode electrode 2a is not shown hatched. 边参照图31边对实施形态20的等离子CVD装置进行说明。 Referring to FIG side edge 31 of the plasma CVD apparatus 20 of the embodiment will be described.

本实施形态,与上述实施形态17不同,使气体导入口6的气体喷出方向不同。 The present embodiment, unlike the above embodiment 17, the gas introduction port 6 discharging the gas in different directions. 即,各气体导入口6,构成为使气体相对于被处理基板4的法线方向倾斜地喷出。 That is, each of the gas inlet 6, configured such that the gas to be treated with respect to the normal direction of the substrate 4 is ejected obliquely. 如图31所示,在沟槽18的左侧的曲面部31上,例如设置7列气体导入口6,形成为分别使气体向右上方倾斜地喷出。 As shown in FIG. 31, the left side portion on the curved surface 18 of the groove 31, for example, the gas inlet 7 is provided. 6, the discharge gas respectively inclined to the right. 另一方面,在右侧的曲面部31上,与左侧的曲面部一样,例如设置7列气体导入口6,形成为使气体向左上方倾斜地喷出。 On the other hand, the curved surface portion 31 on the right side, the left side portion of the curved surface, like, for example, the gas inlet 7 is provided. 6, the gas is discharged obliquely to the left. 此外,在沟槽18的底部,沿沟长方向例如排列形成3列气体导入口6,并由这些气体导入口6将气体沿被处理基板4的法线方向喷出。 Further, in the bottom of the trench 18, are arranged along the channel length direction are formed, for example, three gas inlet 6, gas inlet 6 by which the gas to be treated along a direction normal to the substrate 4 is ejected. 另外,各气体导入口6,在左侧的曲面部31、右侧曲面部31、沟槽18的底部的各区域上,各自以平行的方式喷出。 Further, each of the gas inlet 6, the curved surface portion 31 on the left side, right side curved surface portion 31, the area of ​​the bottom of each groove 18, each discharge in a parallel manner.

因此,按照本实施形态,由于使气体的喷出方向为倾斜方向,所以可以延长气体在沟槽18内通过等离子区域的距离,因而可以促进气体的离解和裂解,所以能使膜质得到提高。 Thus, according to this embodiment, since the direction of the gas discharge direction is inclined, it is possible to increase the distance in the gas within the channel 18 by the plasma region, it is possible to promote dissociation and cleavage, the gas film quality can be improved.

发明的实施形态21图32示出本发明的实施形态21。 21 embodiment of the invention. FIG. 32 shows Embodiment 21 of the present invention. 图32是将等离子放电发生单元15局部放大后示出的断面图。 FIG 32 is a cross-sectional view of a plasma discharge unit 15 is shown in a partially enlarged occur.

本实施形态,与上述实施形态16不同,变更了气体导入口6的气体喷出方向。 The present embodiment, 16 different from the above embodiment, the changing direction of the gas discharge of the gas inlet 6. 即,各气体导入口6,在沟槽18的沟宽方向上排列多个,并构成为使气体向与作为阴电极2a的等离子放电面的倾斜面垂直的方向喷出。 That is, each of the gas inlet 6, are arranged in a plurality of grooves 18 the groove width direction, perpendicular to the gas and is configured to discharge the inclined surface 2a of the cathode electrode as the plasma is ejected in the direction of the plane.

在沟槽18内,虽然各具有2个倾斜面,但在本实施形态中仅在其中一个倾斜面上设置气体导入口6。 Within the trench 18, while each having two inclined surfaces, but in the present embodiment, only one of the gas inlet 6 inclined surface. 进一步,与上述实施形态1一样,也在沟槽18的底部设置气体导入口6。 Further, as in the above embodiment 1, the gas inlet port 6 are provided at the bottom of trench 18. 这些气体导入口6,也是沿沟长方向分别排列配置多个。 The gas inlet port 6, is in the channel length direction are arranged a plurality.

可是,等离子放电的路径,在与阴电极2a的等离子放电面正交的方向上形成。 However, the plasma discharge path is formed in a direction the cathode electrode and the ion discharge or the like perpendicular to the surface 2a. 与此对应地,按照本实施形态,使气体的喷出方向与等离子放电面正交,所以能够将气体沿着放电路径导入。 Corresponding to this, according to the present embodiment, the discharge direction of the gas discharge surface perpendicular to the plasma, it is possible to discharge the gas introduced along the path. 因此,可以高效率地进行气体的裂解和离解。 Accordingly, cleavage and dissociation gas with high efficiency.

另外,由于只在各沟槽18的2个倾斜面中的一个倾斜面上设置气体导入口6,所以与在2个倾斜面上都设置的情况相比可以抑制气流的紊流的产生。 Further, since the gas inlet port 6 is provided only in two inclined surfaces of each groove 18 in an inclined surface, it is possible to inhibit the turbulence of the air flow in comparison with the case 2 are arranged inclined surface.

此外,在本实施形态中,使沟槽18为具有2个倾斜面的形状,但也可以是其他的形状。 Further, in the present embodiment, the shape of the trench 18 having the two inclined surfaces, but may be other shapes. 例如,也可以由如图6所示的曲面部31构成沟槽18,并沿沟宽方向设置多个气体导入口6,同时使各气体导入口6的气体喷出方向为与曲面部31垂直的方向。 For example, it may be constituted by a curved surface portion 31 as shown in FIG. 6, the grooves 18, and a plurality of gas inlet port 6 provided in the groove width direction, while the direction of each gas introduced into the gas discharge port 6 is perpendicular to the curved portion 31 direction.

如上所述,本发明,可以有效地应用于备有在第1电极及第2电极之间产生等离子放电的等离子放电部的等离子工艺装置、电子器件及其制造方法,尤其适用于即使在低处理温度下也要使膜质提高的场合。 As described above, the present invention can be effectively applied with generated between the first electrode and the second electrode of a plasma process apparatus, an electronic device and a method for producing a plasma discharge portion of the plasma discharge, and the like, particularly suitable for processing even at low temperatures should improve the film quality of the occasion.

Claims (30)

1.一种等离子加工装置,该等离子加工装置在被处理基板上实施等离子处理,特征在于,具有:在内部载置了上述被处理基板的处理室;在上述处理室内导入气体的气体导入口;设置在上述处理室内的等离子放电发生单元,上述等离子放电发生单元具有阴极电极和比上述阴极电极更接近上述被处理基板设置的阳极电极,上述阴极电极以及上述阳极电极被设置在上述被处理基板的同一侧,并且只有从上述被处理基板的法线方向能够识别的面起到作为等离子放电面的作用。 1. A plasma processing apparatus, the plasma processing apparatus according to the substrate to be processed, plasma processing, comprising: internally mounting the process chamber substrate to be processed; a gas introducing a gas in the processing chamber inlet; disposed in the processing chamber plasma discharge generating means, the plasma discharge occurring cell having a cathode electrode and closer to the anode electrode is disposed handle substrate than the cathode electrode, the cathode electrode and the anode electrode is provided on the substrate to be processed on the same side, and only functions as a plasma discharge and the like from the face of the surface to be treated can be identified by the substrate normal.
2.一种等离子加工装置,该等离子加工装置在被处理基板上实施等离子处理,特征在于,具有:在内部载置了上述被处理基板的处理室;在上述处理室内导入气体的气体导入口;设置在上述处理室内的等离子放电发生单元,上述等离子放电发生单元具有阴极电极、形成在上述阴极电极中的在上述被处理基板侧之电极面的一部分上的绝缘层和形成在上述绝缘层上的阳极电极。 A plasma processing apparatus, the plasma processing apparatus according to the substrate to be processed, plasma processing, comprising: internally mounted above the process chamber for processing a substrate; a gas introducing a gas in the processing chamber inlet; disposed in the processing chamber plasma discharge generating means, the plasma discharge occurring cell having a cathode electrode, an insulating layer on the cathode electrode on a portion of the processing target electrode surface of the substrate side of the formed on the insulating layer, anode electrode.
3.根据权利要求1或2所述的等离子加工装置,特征在于:上述气体导入口设置在上述阴极电极一侧。 The plasma processing apparatus or the like as claimed in claim 12, wherein: the gas inlet port provided on the cathode electrode side.
4.根据权利要求1或2所述的等离子加工装置,特征在于:上述阴极电极的等离子放电面是凹面形状。 The plasma processing apparatus or the like as claimed in claim 12, wherein: the cathode plasma electrode discharge surface is a concave shape, and the like.
5.根据权利要求1或2所述的等离子加工装置,特征在于:上述阴极电极的等离子放电面的面积比上述阳极电极的等离子放电面的面积大。 The plasma processing apparatus or the like as claimed in claim 12, characterized in that: the ion discharge surface area of ​​the cathode electrode is larger than an area like the plasma discharge surface of the anode electrode and the like.
6.根据权利要求1或2所述的等离子加工装置,特征在于:上述等离子放电发生单元分别具有多个上述阴极电极的等离子放电面区和上述阳极电极的等离子放电面区。 The plasma processing apparatus or the like as claimed in claim 12, wherein: said plasma generating means each having a discharge surface region of the plasma discharge plasma discharge surface area of ​​the plurality of the cathode electrode and the anode electrode and the like, and the like.
7.根据权利要求1或2所述的等离子加工装置,特征在于:沿着上述被处理基板的一个面的方向交替形成多个上述阴极电极的等离子放电面区和上述阳极电极的等离子放电面区,而且上述阳极电极与上述被处理基板之间的距离是相互邻接的上述阳极电极的电极间距离以上。 The plasma processing apparatus or the like as claimed in claim 12, characterized in that: surface regions are alternately formed in the plasma discharge region of the plurality of plasma discharge surface of the cathode electrode and the anode electrode like the other direction along the surface of the substrate to be processed is a , and the inter-electrode distance between the anode electrode and the substrate to be processed is the anode electrode adjacent to each other in distance or more.
8.根据权利要求1或2所述的等离子加工装置,特征在于:还具有在上述阴极电极以及上述阳极电极上施加电能的电源,上述电源的频率是300kHz以上300MHz以下。 8. The plasma processing apparatus or the like according to claim 12, characterized in that: further having a power supply for applying electrical energy to said cathode electrode and said anode electrode, the power source frequency is 300kHz or less than 300MHz.
9.根据权利要求1或2所述的等离子加工装置,特征在于:上述阴极电极的等离子放电面具有凹形的曲面部分。 9. The plasma processing apparatus or the like as claimed in claim 12, wherein: the plasma discharge surface of the cathode electrode has a concave curved surface portion and the like.
10.根据权利要求9所述的等离子加工装置,特征在于:上述阴极电极的等离子放电面和上述阳极电极的等离子放电面构成连续曲面的一部分。 10. The plasma processing apparatus according to claim 9 or the like, comprising: a plasma discharge a plasma discharge side surface of the cathode electrode and the anode electrode, etc. constituting part of a continuous curved surface and the like.
11.根据权利要求1或2所述的等离子加工装置,特征在于:在上述阴极电极的等离子放电面上形成多个凹入部。 11. The plasma processing apparatus or the like according to claim 12, characterized in that: the plurality of concave portions formed in the discharge face of the cathode electrode of the ion and the like.
12.根据权利要求11所述的等离子加工装置,特征在于:在至少一部分上述凹入部的底部形成气体导入口。 12. The plasma processing apparatus according to claim 11, characterized in that: the gas inlet is formed at the bottom part of the concave portion at least.
13.根据权利要求1或2所述的等离子加工装置,特征在于:喷砂加工上述阴极电极的等离子放电面。 13. The plasma processing apparatus or the like as claimed in claim 12, characterized in that: sandblasting the cathode electrode surface discharge plasma.
14.根据权利要求1或2所述的等离子加工装置,特征在于:在上述阴极电极上设置着朝向被处理基板开口的多个凹部。 14. The plasma processing apparatus or the like according to claim 12, characterized in that: a plurality of concave portions disposed toward the opening of the processed substrate on the cathode electrode.
15.根据权利要求14所述的等离子加工装置,特征在于:上述凹部的开口形状是四边形。 15. The plasma processing apparatus according to claim 14, characterized in that: an opening shape of the recessed portion is a quadrilateral.
16.根据权利要求14所述的等离子加工装置,特征在于: 16. The plasma processing apparatus as claimed in claim 14, characterized in that:
17.一种电子器件的制造方法,该方法使用具备在内亻部载置了被处理基板的处理室;在上述处理室内导入气体的气体导入口;设置在上述处理室内的等离子放电发生单元的等离子加工装置制造电子器件,所述等离子放电发生单元中具有阴电极、形成在所述阴电极的电极面的一部分上的绝缘层和形成在上述绝缘层上的阳电极,所述阴电极、绝缘层和阳电极位于被处理基板的同一侧,特征在于,该方法包括:在上述处理室的内部载置上述被处理基板的工艺;在载置了上述被处理基板的上述处理室内,从上述气体导入口导入上述气体的工艺;由上述等离子放电发生单元发生等离子放电,在上述被处理基板的表面实施等离子处理的工艺,沿着上述等离子放电的放电路径导入上述气体。 17. A method of manufacturing an electronic device, the method comprising the inner mounting portion Ren processing chamber for processing a substrate; a gas inlet for introducing a gas into the processing chamber; disposed in the processing chamber plasma discharge generating unit an electrode unit having the cathode plasma processing apparatus of manufacturing an electronic device, a plasma discharge occurs, the insulating layer is formed on a portion of the electrode surface of the cathode electrode and the anode electrode is formed on the insulating layer, the cathode electrodes, an insulating layer and the anode electrode located on the same side of the substrate to be processed, characterized in that, the method comprising: inside the process chamber is placed above the treatment process of the substrate; the mounting described above is in the processing chamber for processing a substrate from the gas inlet of the gas introduced into the process; discharged by said plasma generating means plasma discharge occurs, in the above-described plasma treatment is a surface treatment process of the embodiment and the like of the substrate, along a discharge path discharging the gas introduced into the plasma.
18.一种电子器件的制造方法,该方法使用权利要求1的等离子处理装置制造电子器件,特征在于:包括在上述处理室的内部载置上述被处理基板的工艺;在载置了上述被处理基板的上述处理室内,从上述气体导入口导入上述气体的工艺;由上述等离子放电发生单元发生等离子放电,在上述被处理基板的表面实施等离子处理的工艺。 18. A method of manufacturing an electronic device, as claimed in claim 1 which uses a plasma processing apparatus for manufacturing an electronic device, comprising: a process chamber inside the process of mounting a substrate to be processed; placed in the above-described process is substrate in the processing chamber, the gas introduced from the gas inlet of the process; discharged by said plasma generating means plasma discharge occurs, the surface to be treated in the process embodiment of the plasma treatment of the substrate.
19.一种电子器件,该电子器件在绝缘基板上成膜了绝缘膜,特征在于:上述绝缘膜包括硅、氮以及氢,上述绝缘膜内的氢结合量是7×1021cm-3以上。 19. An electronic device, the electronic device on an insulating substrate, forming an insulating film, wherein: the insulating film comprises silicon, nitrogen and hydrogen, the amount of hydrogen bonding of the insulating film was 7 × 1021cm-3 or more.
20.根据权利要求19所述的电子器件,特征在于:上述绝缘膜内的氧结合量实质上是0。 20. The electronic device according to claim 19, characterized in that: an oxygen binding amount of the insulating film is substantially 0.
21.根据权利要求19所述的电子器件,特征在于:上述绝缘膜形成为外层。 21. The electronic device according to claim 19, wherein: the insulating film is formed as an outer layer.
22.根据权利要求19所述的电子器件,特征在于:上述绝缘基板由有机材料形成。 22. The electronic device according to claim 19, characterized in that: the insulating substrate is formed of an organic material.
23.根据权利要求19所述的电子器件,特征在于:还可以具有有机层。 23. The electronic device according to claim 19, characterized in that: the organic layer may further have.
24.一种等离子加工装置,该等离子加工装置具备在内部载置了被处理基板的处理室;在上述处理室的内部导入气体的气体导入口;设置在上述处理室的内部,在上述被处理基板上实施等离子处理的等离子放电发生单元,特征在于:上述等离子放电发生单元具备沿着与上述被处理基板平行的方向呈条状地延伸的多个绝缘部分;至少在相互邻接的上述绝缘部分之间设置的阴极电极;在上述各个绝缘部分的上述被处理基板一侧的端部以与上述阴极电极分离的状态设置的阳极电极。 24. A plasma processing apparatus, the plasma processing apparatus includes within the processing chamber mounting the substrate to be processed; gas introducing a gas inside the processing chamber inlet; disposed inside the process chamber is processed in the above-described plasma treatment on the substrate, plasma discharge generation unit, wherein: said plasma discharge generation unit provided along a plurality of insulating portions of the strip extending in the form of the direction parallel to the handle substrate described above; at least one another adjacent to the insulating portion of disposed between the cathode electrode; ends of the anode electrode is processed to separate the substrate side and the state of the cathode electrode disposed in each of the insulating portions.
25.根据权利要求24所述的等离子加工装置,特征在于:在上述各个绝缘部分之间设置的各个阴极电极相互分离。 25. The plasma processing apparatus according to claim 24 or the like, characterized in that: each of the cathode electrode between each of the insulating portion is provided separated from each other.
26.根据权利要求24所述的等离子加工装置,特征在于:在上述阴极电极中形成多个气体导入口,沿着对于上述条状的绝缘部分的长度方向交叉的方向排列设置上述多个气体导入口。 26. The plasma processing apparatus according to claim 24 or the like, comprising: a plurality of gas inlet ports formed in the cathode electrode, a plurality of gas introduction above are arranged along a direction with respect to the longitudinal direction of the strip-shaped insulating portions intersecting mouth.
27.根据权利要求26所述的等离子加工装置,特征在于:上述多个气体导入口沿着与上述绝缘部分的长度方向正交的方向排列。 27. The plasma processing apparatus according to claim 26 or the like, wherein: the plurality of gas inlet ports arranged in a direction perpendicular to the longitudinal direction of the insulating portion.
28.根据权利要求26所述的等离子加工装置,特征在于:上述各个气体导入口构成为沿着相互平行的方向吹出气体。 28. The plasma processing apparatus according to claim 26 or the like, wherein: the respective gas inlet is configured to blow gas in a direction parallel to each other.
29.根据权利要求26所述的等离子加工装置,特征在于:上述各个气体导入口构成为沿着与阴极电极的等离子放电面垂直的方向吹出气体。 29. The plasma processing apparatus as claimed in claim 26, wherein: the respective gas inlet is configured to blow gas in a direction of the ion discharge surface perpendicular to the cathode electrode and the like.
30.根据权利要求26所述的等离子加工装置,特征在于:上述各个气体导入口构成为对于被处理基板的法线方向倾斜的方向吹出气体。 30. The plasma processing apparatus according to claim 26 or the like, wherein: the respective gas inlet is configured to blow the gas to the inclined direction to the normal direction of the substrate processing.
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