CN1292403C - Perpendicular writer pole comprising non-magnetic seed crystal layer - Google Patents
Perpendicular writer pole comprising non-magnetic seed crystal layer Download PDFInfo
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- CN1292403C CN1292403C CN 03107800 CN03107800A CN1292403C CN 1292403 C CN1292403 C CN 1292403C CN 03107800 CN03107800 CN 03107800 CN 03107800 A CN03107800 A CN 03107800A CN 1292403 C CN1292403 C CN 1292403C
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- crystal layer
- inculating crystal
- write head
- magnetic
- main pole
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/1278—Structure or manufacture of heads, e.g. inductive specially adapted for magnetisations perpendicular to the surface of the record carrier
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3109—Details
- G11B5/313—Disposition of layers
- G11B5/3133—Disposition of layers including layers not usually being a part of the electromagnetic transducer structure and providing additional features, e.g. for improving heat radiation, reduction of power dissipation, adaptations for measurement or indication of gap depth or other properties of the structure
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3163—Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers
Abstract
A perpendicular write head comprises a main magnetic pole, a return magnetic pole, and a conduction coil. The main magnetic pole comprises a seed layer and a magnetic layer plated on the seed layer. The seed layer is non-magnetic, conductive, and corrosion resistance. The return magnetic pole is separated from the main magnetic pole by a gap at an air bearing plane of the writing head, and coupled to the main magnetic pole at the opposite side of the air bearing plane. The conduction coil is positioned partially between the main magnetic pole and the return magnetic pole.
Description
Cross-reference with related application
It is the right of priority of the temporary patent application of Britain of 0207724.6 that the application requires the sequence number of Peter Kevin Mark McGeehin, Alison Mary Bell and Alan BiggarJohnston, this application proposed on April 3rd, 2002, and name is called " Ruthenium As Non-Magnetic Seedlayer forElectrodeposition " (" with the non magnetic inculating crystal layer of ruthenium as electrolytic deposition ").This application intactly is incorporated herein, for your guidance.
Technical field
The present invention generally relates to the storage of electronic data and the field of reading system.Specifically, the present invention relates to conversion head have a non magnetic inculating crystal layer vertically write magnetic pole.
Background technology
In electronic data storage and reading system, conversion head generally includes one and is used for the information stores of magnetic code is used for reading from disk the reader of this magnetic code information to the write device and on the disk.Reader generally includes two shielding parts and and places a magnetic resistance (MR) sensor between two shielding parts.The magnetic flux that sends from magnetic disk surface rotates the magnetization vector of the sensing layer of MR sensor, and this makes the resistivity of MR sensor change again.The change in resistance of this MR sensor can be with measuring by the voltage of an electric current and measurement leap MR sensor in the MR sensor.Then, external circuit just converts information of voltage to one suitable form and as required information is operated.
Write device generally includes two magnetic poles or a magnetic core, and they are located to be spaced from each other one at an air loading surface (ABS) of write head and write the gap, and interconnect in a location of leaving this ABS.Between two magnetic poles, be provided with one or more conductor wire ring layers by insulating material sealing.Write device and reader often are arranged to a kind of structure of merging, and wherein a public magnetic pole is used as a shielding part of reader and a magnetic pole of write device simultaneously.
Magnetic pole can deposit by splashing type technology or by electrolytic deposition.In the later case, the conductive seed layer that need electroplate magnetic pole thereon by mask, thus so that metallic ion reduces and forms magnetic pole.Traditionally, inculating crystal layer also is to be made by the material of magnetic conduction, so just makes inculating crystal layer become the active part of a magnetic of magnetic pole.
Write device can be arranged to write device or vertical write device longitudinally.Under any situation, although the operation of the reality of its element is obviously different with size, the general structure of write head then is similar.One longitudinally in the write device, two magnetic poles refer generally to an end magnetic pole and a top magnetic pole, and in a vertical write device, two magnetic poles refer generally to one and return a magnetic pole and a main pole.
In order to write data into one longitudinally on the magnetic medium, allow a time-varying current or write current flow through conductive coil.Write current produces a mM disodium hydrogen phosphate by top magnetic pole and low magnetic pole, and the gap that writes between two magnetic poles is crossed in this magnetic field at the ABS place of conversion head.Vertically the magnetic pole medium passes through in the predetermined distance of the ABS of close conversion head, so that the magnetic surface of medium is by this magnetic field.When write current had changed direction, the density and the direction in magnetic field changed.Because the magnetic field that is produced is in the plane of magnetic medium all bits (bits) that will write on the magnetic medium, so this write device is called as vertical write device.
Perpendicular magnetic media keeps magnetized direction different in recording surface with vertical magnetic medium.For vertical medium, magnetization remains on the direction that is roughly parallel to dielectric surface, and for perpendicular media, and magnetization then remains on the direction that is approximately perpendicular to dielectric surface.For record data vertically, perpendicular media is generally formed by two-layer: a soft magnetic bottom and with high osmosis has the dielectric layer of high perpendicular magnetic anisotropy.
In order to write data on the perpendicular magnetic media, make a time dependent write current flow through lead loop, this follows by main pole and returns magnetic pole and produces a mM disodium hydrogen phosphate.Then, magnetic medium passes through at the preset distance place of the ABS of close write device, so that medium passes through magnetic field.For perpendicular writer, main pole and return magnetic pole and separate fartherly than the top magnetic pole and the end magnetic pole of vertical write device, the bottom of magnetic pole medium is in fact as one the 3rd magnetic pole of write device; That is the gap from the main pole to the bottom is crossed in magnetic field, passes the magnetic medium layer, crosses over bottom then again and returns gap between the magnetic pole, and pass dielectric layer once more.In order to guarantee that magnetic field does not write data on this return path, it is more much bigger than main pole at the ABS place to return magnetic pole, so that pass the intrinsic magnetization that the magnetic field of dielectric layer can't focus on is enough to overcome medium.
At present, just adopting perpendicular writer, to increase the face bit density of magnetic medium as the optional apparatus that is better than vertical write device.As mentioned above, the main pole of perpendicular writer is generally electroplated a magnetic material by mask and is formed, and this then need carry out the deposition of conductive seed layer.Traditionally, this inculating crystal layer also is to be made by the material of magnetic conduction, so just makes inculating crystal layer become the active part of a magnetic of magnetic pole.
Importantly, when the design perpendicular writer, be preferably the thickness minimum that makes in the main pole at ABS place, to reduce overstepping the limit when crooked.In addition, only there is a trailing edge of the main pole of perpendicular writer to help ablation process.Like this, thicker main pole can not improve the quality that writes data.Traditionally, vertically the thickness of write device about one micron to about two microns scope, the thickness of perpendicular writer is then less than about one micron.But traditional magnetic inculating crystal layer of electroplating main pole thereon is difficult to make the minimum of main pole thickness.And, because write head has stayed the vestige of the main pole shape at ABS place on medium, so a preferably foursquare main pole.Once more, traditional magnetic inculating crystal layer can have influence on the ratio of width to height of main pole, and the shape that makes main pole is not very square.
Summary of the invention
The invention provides a kind of vertical write head, it has a perpendicular writer, and this perpendicular writer comprises that one vertically writes magnetic pole, and this vertically writes magnetic pole and comprises one non magnetic, conduction and an etch-proof inculating crystal layer and a magnetosphere of electroplating on inculating crystal layer.
The present invention also provides a kind of vertical write head, and it comprises that a main pole, returns magnetic pole and conductive coil.Main pole comprises an inculating crystal layer and a magnetosphere of electroplating on inculating crystal layer.Inculating crystal layer is non magnetic, conduction and etch-proof.Return magnetic pole and separate one at interval, and link to each other with main pole in relative part with air loading surface in the air loading surface place and the main pole of write head.Lead loop is at least in part in main pole with return between the magnetic pole.
The present invention also provides a kind of vertical write head, have a magnetic main pole and a magnetic and return magnetic pole, wherein main pole comprises an inculating crystal layer and a magnetosphere of electroplating on inculating crystal layer, main pole the air loading surface place of write head with return magnetic pole and separate one at interval, and relative part with air loading surface with return magnetic pole and contact, it is characterized in that: inculating crystal layer is formed by a kind of non magnetic, conduction and etch-proof material, so that magnetospheric easy magnetizing axis coercive force and hard axis coercive force are reduced to simultaneously less than 3 oersteds.
The accompanying drawing summary
Fig. 1 is the sectional view according to a conversion head of the present invention.
Fig. 2 is a main pole of conversion head shown in Figure 1 and the air bearing figure of a main pole inculating crystal layer.
Fig. 3-the 6th illustrates the sectional view of the method for the main pole that forms conversion head shown in Figure 1.
Fig. 7 A-7D is B-H figure, shows the coercive force (magneticcoercivity) of the Co-Ni-Fe thin slice on that electroplates respectively in ruthenium inculating crystal layer, nickel-vanadium inculating crystal layer, titanium-tungsten inculating crystal layer and prior art cobalt-iron inculating crystal layer.
Fig. 8 A-8D is gram otoscope (Kerrscope) figure that electroplates and form the easy magnetizing axis of the Co-Ni-Fe architectural feature on pattern in ruthenium inculating crystal layer, nickel-vanadium inculating crystal layer, titanium-tungsten inculating crystal layer and prior art cobalt-iron inculating crystal layer respectively.
Fig. 9 A-9D is the hard axis gram otoscope figure that electroplates and form the Co-Ni-Fe architectural feature on pattern in ruthenium inculating crystal layer, nickel-vanadium inculating crystal layer, titanium-tungsten inculating crystal layer and prior art cobalt-iron inculating crystal layer respectively.
Figure 10 is the sectional view according to an alternate embodiments of conversion head of the present invention.
Embodiment
Fig. 1 be according to conversion head 10 of the present invention and disk 12 sectional view.Section shown in Figure 1 is approximately perpendicular to the air loading surface (ABS) of conversion head 10.Fig. 1 shows the orientation of the relative disk 12 with it of conversion head 10.The ABS of conversion head 10 is in the face of the panel surface 14 of disk 12.Disk 12 is moving on direction shown in the arrow A of conversion head 10 or is rotating.Be preferably the ABS that makes conversion head 10 and the gap minimum between the panel surface 14, and avoid the contact between conversion head 10 and the disk 12.In most of the cases, contacting between conversion head 10 and the disk 12 can be damaged magnetic conversion head 10 and disk 12 simultaneously.
Conversion head 10 comprises magnetic resistance (MR) reader 16 and perpendicular writer 18.MR reader 16 comprises that end shielding part 20, MR read part 22, insulation course 24 and top shielding part/return magnetic pole 26.MR read part 22 be positioned at insulation course 24 ABS near, and be in end shielding part 20 and top shielding part/return between the terminal of magnetic pole 26.End shielding part 20 and top shielding part/return magnetic pole 26 to work are to guarantee that by the magnetic field that absorbs any dissipation of sending from adjacent magnetic track and transitional region MR reads part 22 and only reads and just in time be stored in information its below, on a particular track of disk 12.MR reads in the part any of reading that part 22 can be a number of different types, reads part or a big magnetic resistance (GMR) reads part as an anisotropic MR.In operating process, the magnetic flux that sends from a surface of disk 12 makes MR read the magnetization vector rotation of a sensing layer of part 22, and this resistivity that then makes MR read part 22 changes.MR reads the change in resistance of part 22 and can cross over the voltage that MR reads part 22 and measure with reading in the part 22 by an electric current at MR and measuring.Insulation course 24 makes MR read shielding part 20 and top shielding part at the bottom of 22 pairs of the parts/return each insulation in the magnetic pole 26.
Perpendicular writer 18 comprises top shielding part/return magnetic pole 26, insulation course 28, main pole inculating crystal layer 30, main pole 32 and lead loop 34.Top shielding part/return magnetic pole 26 to be spaced from each other by insulation course 28 at the ABS place with main pole inculating crystal layer 30, and be connected with the mutual magnetic of ABS opposite position.On the side relative that main pole 32 is formed on main pole inculating crystal layer 30 with insulation course 28.Conductive coil 34 is at least in part at top shielding part/return in the insulation course 28 between magnetic pole 26 and the main pole 30.Conductive coil 34 be wrapped at least in magnetic pole 26 and the main pole 32 one of top shielding part/return around produce magnetic field so that the electric current by conductive coil 34 is flowing in top shielding part/return in magnetic pole 26 and the main pole 32.Although shown in Figure 1 is the conductive coil 34 of individual layer, be understood that, in present technique, also can use the multilayer conductive coil that separates by a plurality of insulation courses.Conversion head 10 is MR heads of a merging, and wherein top shielding part/return magnetic pole 26 returns magnetic pole as one in top shielding part in the MR reader 16 and the perpendicular writer 18 simultaneously.If conversion head 10 is a sectional type (piggyback) MR heads, 26 of top shielding part/return magnetic poles are formed by the layer that separates.
In the manufacturing of conversion head 10, magnetic main pole 32 is deposited as by electrolytic deposition, and wherein main pole inculating crystal layer 30 is formed by a conductive material, and can electroplate main pole 32 by mask thereon.Traditionally, main pole inculating crystal layer 30 is made by a kind of permeability magnetic material such as Ni-Fe, so that main pole inculating crystal layer 30 becomes the active part of a magnetic of main pole 32, makes the net thickness of main pole 32 greater than its actual thickness.But as above described in the technical background part, be preferably the net thickness minimum that makes main pole 32, to reduce overstepping the limit when crooked.
The present invention recognizes that main pole inculating crystal layer 30 materials of a magnetic part that can be by selecting not become main pole 32 make the net thickness minimum of main pole 32; That is, realize by selecting a kind of nonmagnetic substance.The selected material of main pole inculating crystal layer is preferably, for also can make in the main pole 32 coercive force lower; More particularly, this material is preferably can provide one greater than the coercive force about 3 oersteds, and more preferably is greater than about 1 oersted.Lower coercive force can make write faster, that is, the direction in the magnetic field that write device produced of can reversing more apace.The selected material of main pole inculating crystal layer is preferably also can anticorrosion.In addition, the selected material of main pole inculating crystal layer is not preferably can in the material that forms main pole 32 galvanic corrosion take place, will be such as the needs of the noble metal gold, silver and the platinum as main pole seed crystal 30 thereby eliminated effectively.In addition, main pole inculating crystal layer 30 selected materials are preferably can provide desired roughness and resistivity in main pole 32.Be that main pole inculating crystal layer 30 is made by ruthenium, nickel-vanadium or titanium-tungsten best.
For record data vertically, vertical disk 12 is generally formed by two-layer: a soft magnetic bottom 38 and with high osmosis has the dielectric layer 36 of high perpendicular magnetic anisotropy.
In order to write data on the vertical disk 12, make a time dependent write current flow through lead loop 34, this is then by top shielding part/return magnetic pole 26 with main pole 30 produces a mM disodium hydrogen phosphate.Then, disk 12 is at a preset distance on the ABS of write device 18 and passes through, so that disk 12 passes through magnetic field.The bottom 38 of disk 12 is used as one the 3rd magnetic pole of write device 18 in fact; That is 38 gap is crossed over from main pole 32 to bottom in magnetic field, passes the dielectric layer 36 of disk 12, crosses over bottom 38 and top shielding part/return the gap between the magnetic pole 26 then again, and passes dielectric layer 36 once more.In order to guarantee that magnetic field does not write data on this return path, top shielding part/return magnetic pole 26 is more much bigger than main pole 32 at the ABS place, so that pass the intrinsic magnetization that the magnetic field of dielectric layer 36 can't focus on is enough to overcome dielectric layer 36.
Fig. 2 is the main pole inculating crystal layer 30 of conversion head 10 shown in Figure 1 and the air bearing figure of main pole 32.Be preferably main pole inculating crystal layer 30 and main pole 32 width W separately
MPAbout 0.05 micron to about 1 micron scope, the best be about 0.1 micron to about 0.3 micron scope, and the thickness T of main pole inculating crystal layer 30
sAbout 0.025 micron to about 0.1 micron scope, the thickness T of main pole 32
MPMake both gross thickness of main pole inculating crystal layer 30 and main pole 32 about 0.1 micron to about 1 micron scope.In addition, main pole 32 is preferably and has a roughly rectangular shape along ABS; That is, the width W of main pole 32
MPBe preferably with the thickness of main pole 32 about equally.Therefore, the width of main pole 32 to thickness and the ratio of width to height be preferably about 0.95 to about 1.05 scope, be to be about 1 best.
Fig. 3-the 6th illustrates the sectional view of the method for the main pole 32 that forms conversion head 10 shown in Figure 1.In Fig. 3, main pole inculating crystal layer 30 is deposited on the insulating material 28, and mask 40 deposits on the main pole inculating crystal layer 30, and two depositions all are to be finished by traditional device.Mask 40 is used for limiting the shape of main pole 32.In Fig. 4, main pole 32 is electroplated onto the not masked 40 main pole inculating crystal layers 30 that cover and does not cover on the part.In Fig. 5, remove mask 40.And, in Fig. 6, the part of the previous mask covering of main pole inculating crystal layer 30 to be removed by a milling process, this milling process also makes main pole 32 attenuation.
Inventor of the present invention has carried out an experiment, to investigate non magnetic main pole inculating crystal layer to electroplating main pole Effect on Performance thereon.Fig. 7-9 shows result of experiment.In experiment, its magnetic moment about 1.8 is electroplated onto on four kinds of different inculating crystal layer materials for the Co-Ni-Fe thin slice of tesla; That is (a) ruthenium, (b) nickel-vanadium, (c) titanium-tungsten and (d) cobalt-iron of prior art.These inculating crystal layers are deposited the thickness of 1000 dusts respectively on aluminium titanium carbon (AlTiC) wafer.Then, the magnetic property of four Co-Ni-Fe thin slices is measured, and drawn with a B-H hysteresis instrument (looper).Then measure the resistivity and the roughness of four Co-Ni-Fe thin slices.At last, make each inculating crystal layer and Co-Ni-Fe thin slice test specimen form pattern (pattern) forming a big architectural feature, and with the gram otoscope analyze, with the domain wall formation situation along easy magnetizing axis and hard axis of investigation test specimen.
Fig. 7 A-7D is B-H figure, shows the coercive force of electroplating the Co-Ni-Fe thin slice on the cobalt-iron inculating crystal layer (Fig. 7 D) of ruthenium inculating crystal layer (Fig. 7 A), nickel-vanadium inculating crystal layer (Fig. 7 B), titanium-tungsten inculating crystal layer (Fig. 7 C) and prior art respectively.Shown in these figure, the cobalt of the magnetic of prior art-iron inculating crystal layer makes that the coercive force of easy magnetizing axis of thin slice is that the coercive force of 4.20 oersteds and hard axis is 1.30 oersteds, and the coercive force that each non magnetic inculating crystal layer produced is then lower.Specifically, the coercive force of the easy magnetizing axis of the thin slice that the ruthenium inculating crystal layer obtains is that the coercive force of 0.80 oersted, hard axis is 0.24 oersted, the coercive force of the easy magnetizing axis of nickel-thin slice that the vanadium inculating crystal layer obtains is that the coercive force of 1.20 oersteds, hard axis is 0.38 oersted, and the coercive force of the easy magnetizing axis of titanium-thin slice that the tungsten inculating crystal layer obtains is that the coercive force of 2.60 oersteds, hard axis is 1.50 oersteds.
Fig. 8 A-8D is the easy magnetizing axis gram otoscope figure of the big 1.8 tesla cobalt ferronickel architectural features of the formation pattern on that electroplates respectively in ruthenium inculating crystal layer (Fig. 8 A), nickel-vanadium inculating crystal layer (Fig. 8 B), titanium-tungsten inculating crystal layer (Fig. 8 C) and prior art cobalt-iron inculating crystal layer (Fig. 8 D).Similarly, Fig. 9 A-9D is the hard axis gram otoscope figure of the big 1.8 tesla cobalt ferronickel architectural features of the formation pattern on that electroplates respectively in ruthenium inculating crystal layer (Fig. 9 A), nickel-vanadium inculating crystal layer (Fig. 9 B), titanium-tungsten inculating crystal layer (Fig. 9 C) and prior art cobalt-iron inculating crystal layer (Fig. 9 D).In both cases, the domain wall that is formed on the architectural feature on the non magnetic inculating crystal layer than the domain wall that is formed on the architectural feature on magnetic, the cobalt-iron inculating crystal layer still less, and is more stable, and the architectural feature domain wall of ruthenium sample gained is minimum, the most stable.
Figure 10 is the conversion head 50 of one alternate embodiments according to the present invention and the sectional view of disk 52.The sectional view of Figure 10 is the ABS that is approximately perpendicular to conversion head 50.Figure 10 shows the orientation of the relative disk 52 with it of conversion head 50.The ABS of conversion head 50 is in the face of the panel surface 54 of disk 52.Disk 52 is moving on direction shown in the arrow A of conversion head 50 or is rotating.Be preferably the ABS that makes conversion head 50 and the gap minimum between the panel surface 54, and avoid the contact between conversion head 50 and the disk 52.In most of the cases, contacting between conversion head 50 and the disk 52 can be damaged magnetic conversion head 50 and disk 52 simultaneously.
For record data vertically, vertical disk 52 is generally formed by two-layer: a soft magnetic bottom 80 and with high osmosis has the dielectric layer 78 of high perpendicular magnetic anisotropy.
Although the present invention is described with reference to preferred embodiment, those skilled in the art that will appreciate that, can make amendment in the form and details, and not exceed thought of the present invention and protection domain.
Claims (20)
1. vertical write head, it has a perpendicular writer, and this perpendicular writer comprises that one vertically writes magnetic pole, and this vertically writes magnetic pole and comprises one non magnetic, conduction and an etch-proof inculating crystal layer and a magnetosphere of electroplating on inculating crystal layer.
2. vertical write head as claimed in claim 1 is characterized in that, inculating crystal layer is made by a kind of material that is selected from one group of material that ruthenium, nickel-vanadium and titanium-tungsten forms.
3. vertical write head as claimed in claim 1 is characterized in that the thickness of inculating crystal layer is less than 0.1 micron.
4. vertical write head as claimed in claim 3 is characterized in that the thickness of inculating crystal layer is greater than 0.025 micron.
5. vertical write head as claimed in claim 1 is characterized in that, the thickness that vertically writes magnetic pole is in 0.1 micron to 1 micron scope.
6. vertical write head as claimed in claim 1 is characterized in that, the thickness that vertically writes magnetic pole is in 0.1 micron to 0.5 micron scope.
7. vertical write head as claimed in claim 1 is characterized in that, the width that vertically writes magnetic pole to the ratio of width to height of thickness in 0.95 to 1.05 scope.
8. vertical write head as claimed in claim 1 is characterized in that, magnetospheric easy magnetizing axis coercive force is less than 3 oersteds.
9. vertical write head as claimed in claim 1 is characterized in that, magnetospheric easy magnetizing axis coercive force is less than 1 oersted.
10. vertical write head, it comprises:
One main pole, it comprises one non magnetic, conduction, etch-proof inculating crystal layer and a magnetosphere of electroplating on inculating crystal layer;
One returns magnetic pole, and this returns magnetic pole and separates one at interval in the air loading surface place and the main pole of write head, and links to each other with main pole in relative part with air loading surface; And
At least in part in main pole with return conductive coil between the magnetic pole.
11. vertical write head as claimed in claim 10 is characterized in that, inculating crystal layer is made by a kind of material that is selected from one group of material that ruthenium, nickel-vanadium and titanium-tungsten forms.
12. vertical write head as claimed in claim 10 is characterized in that the thickness of inculating crystal layer is less than 0.1 micron.
13. vertical write head as claimed in claim 12 is characterized in that the thickness of inculating crystal layer is greater than 0.025 micron.
14. vertical write head as claimed in claim 10 is characterized in that the thickness of main pole is in 0.1 micron to 1 micron scope.
15. vertical write head as claimed in claim 10 is characterized in that the thickness of main pole is in 0.1 micron to 0.5 micron scope.
16. vertical write head as claimed in claim 10 is characterized in that, the width of main pole to the ratio of width to height of thickness in 0.95 to 1.05 scope.
17. vertical write head as claimed in claim 10 is characterized in that, magnetospheric easy magnetizing axis coercive force is less than 3 oersteds.
18. vertical write head as claimed in claim 10 is characterized in that, magnetospheric easy magnetizing axis coercive force is less than 1 oersted.
19. vertical write head, have a magnetic main pole and a magnetic and return magnetic pole, wherein main pole comprises an inculating crystal layer and a magnetosphere of electroplating on inculating crystal layer, main pole the air loading surface place of write head with return magnetic pole and separate one at interval, and relative part with air loading surface with return magnetic pole and contact, it is characterized in that: inculating crystal layer is formed by a kind of non magnetic, conduction and etch-proof material, so that magnetospheric easy magnetizing axis coercive force and hard axis coercive force are reduced to simultaneously less than 3 oersteds.
20. vertical write head as claimed in claim 19 is characterized in that, inculating crystal layer is made by a kind of material that is selected from one group of material that ruthenium, nickel-vanadium and titanium-tungsten forms.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GBGB0207724.6A GB0207724D0 (en) | 2002-04-03 | 2002-04-03 | Patent submission-Ruthenium as non-magnetic sedlayer for electrodeposition |
| GB0207724.6 | 2002-04-03 | ||
| US10/321,043 | 2002-12-17 | ||
| US10/321,043 US6807027B2 (en) | 2002-04-03 | 2002-12-17 | Ruthenium as non-magnetic seedlayer for electrodeposition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1508774A CN1508774A (en) | 2004-06-30 |
| CN1292403C true CN1292403C (en) | 2006-12-27 |
Family
ID=28793305
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 03107800 Expired - Fee Related CN1292403C (en) | 2002-04-03 | 2003-04-03 | Perpendicular writer pole comprising non-magnetic seed crystal layer |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP4689947B2 (en) |
| CN (1) | CN1292403C (en) |
| DE (1) | DE10315266A1 (en) |
| SG (1) | SG115532A1 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7580222B2 (en) * | 2004-06-18 | 2009-08-25 | Headway Technologies, Inc. | Thin-film magnetic head, a head gimbal assembly and hard disk drive |
| US7440229B2 (en) * | 2004-06-18 | 2008-10-21 | Headway Technologies, Inc. | Thin-film magnetic head having a write shield layer |
| JP2006269690A (en) | 2005-03-23 | 2006-10-05 | Fujitsu Ltd | Soft magnetic thin film and magnetic recording head |
| US7463450B2 (en) * | 2005-05-23 | 2008-12-09 | Headweay Technologies, Inc. | Thin film magnetic head |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE69318042T2 (en) * | 1993-11-23 | 1998-08-06 | Seagate Technology | THIN FILM MAGNET HEADS WITH THIN NICKEL PADS |
| EP0670570B1 (en) * | 1994-03-03 | 2000-04-26 | Seagate Technology International | Magnetoresistive head and method of manufacture thereof |
| US6169646B1 (en) * | 1998-11-18 | 2001-01-02 | Seagate Technology, Inc. | Magnetoresistive shield incorporating seedlayer for anisotropy enhancement |
| JP3473684B2 (en) * | 1999-11-08 | 2003-12-08 | 日本電気株式会社 | Magnetic head, method of manufacturing the same, and magnetic recording / reproducing apparatus using the same |
| JP3565492B2 (en) * | 2000-02-17 | 2004-09-15 | Ｔｄｋ株式会社 | Thin-film magnetic head, magnetic head device, and magnetic disk device |
| JP2002092821A (en) * | 2000-09-18 | 2002-03-29 | Hitachi Ltd | Single magnetic pole type magnetic head and magnetic disk device mounted with the same |
| JP3875020B2 (en) * | 2000-12-26 | 2007-01-31 | アルプス電気株式会社 | Method for manufacturing perpendicular magnetic recording head |
| JP4130868B2 (en) * | 2001-03-19 | 2008-08-06 | 株式会社日立グローバルストレージテクノロジーズ | Magnetic head for perpendicular recording and magnetic disk drive equipped with the same |
-
2003
- 2003-03-27 SG SG200301517A patent/SG115532A1/en unknown
- 2003-04-02 JP JP2003130894A patent/JP4689947B2/en not_active Expired - Fee Related
- 2003-04-03 DE DE2003115266 patent/DE10315266A1/en not_active Withdrawn
- 2003-04-03 CN CN 03107800 patent/CN1292403C/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2004127479A (en) | 2004-04-22 |
| DE10315266A1 (en) | 2003-10-30 |
| CN1508774A (en) | 2004-06-30 |
| JP4689947B2 (en) | 2011-06-01 |
| SG115532A1 (en) | 2005-10-28 |
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