CN1282903C - Photoetching device and method for manufacturing device - Google Patents

Photoetching device and method for manufacturing device Download PDF

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Publication number
CN1282903C
CN1282903C CNB031330215A CN03133021A CN1282903C CN 1282903 C CN1282903 C CN 1282903C CN B031330215 A CNB031330215 A CN B031330215A CN 03133021 A CN03133021 A CN 03133021A CN 1282903 C CN1282903 C CN 1282903C
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CN
China
Prior art keywords
balance mass
base
base station
bearing
elastic coupling
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Expired - Fee Related
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CNB031330215A
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Chinese (zh)
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CN1479174A (en
Inventor
H·H·M·科克斯
R·N·J·范巴勒戈伊
P·M·H·沃斯特斯
S·A·J·霍尔
S·M·J·科尔内利森
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ASML Netherlands BV
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ASML Netherlands BV
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Exposure apparatus for microlithography
    • G03F7/70691—Handling of masks or wafers
    • G03F7/70766—Reaction force control means, e.g. countermass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
    • B23Q1/00—Members which are comprised in the general build-up of a form of machine, particularly relatively large fixed members
    • B23Q1/25—Movable or adjustable work or tool supports
    • B23Q1/44—Movable or adjustable work or tool supports using particular mechanisms
    • B23Q1/56—Movable or adjustable work or tool supports using particular mechanisms with sliding pairs only, the sliding pairs being the first two elements of the mechanism
    • B23Q1/58—Movable or adjustable work or tool supports using particular mechanisms with sliding pairs only, the sliding pairs being the first two elements of the mechanism a single sliding pair
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
    • B23Q11/00—Accessories fitted to machine tools for keeping tools or parts of the machine in good working condition or for cooling work; Safety devices specially combined with or arranged in, or specially adapted for use in connection with, machine tools
    • B23Q11/0032—Arrangements for preventing or isolating vibrations in parts of the machine
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Exposure apparatus for microlithography
    • G03F7/70691—Handling of masks or wafers
    • G03F7/70716—Stages
    • G03F7/70725—Stages control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Exposure apparatus for microlithography
    • G03F7/70691—Handling of masks or wafers
    • G03F7/70758—Drive means, e.g. actuator, motor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Exposure apparatus for microlithography
    • G03F7/708—Construction of apparatus, e.g. environment, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals, windows for passing light in- and out of apparatus
    • G03F7/70833—Mounting of optical systems, e.g. mounting of illumination system, projection system or stage systems on base-plate or ground
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Exposure apparatus for microlithography
    • G03F7/708—Construction of apparatus, e.g. environment, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/709—Vibration, e.g. vibration detection, compensation, suppression

Abstract

A lithographic projection apparatus in which a reaction force is generated between a balance mass BM and a substrate table WT. The balance mass BM is elastically coupled to the base frame BF with a suspension eigenfrequency of between 0.3 and 10 Hz.

Description

Lithographic equipment and device making method
Invention field
The present invention relates to a kind of lithographic projection apparatus, comprising:
-radiating system is used to produce the projection fibers of radiation;
-bearing structure is used to support patterning apparatus, and this patterning apparatus is used for according to required pattern described projection fibers composition;
-base station is used for fixing substrate;
-projection system is used for patterned projection fibers is projected the target portion of substrate;
-base;
-balance mass; With
-location topworks, be connected between described base station or described bearing structure and the described balance mass, be used between described balance mass and described base station or described bearing structure, producing reacting force, thereby described base station or described bearing structure are positioned with respect to described projection system.
Background of invention
Term used herein " patterning device " should be interpreted as giving the radiation beam of incident to give the parts in patterned cross section with extensively anticipating, and wherein said pattern is consistent with the pattern that will form in the target portion of substrate; Also use term " light valve " herein.Usually, described pattern is corresponding with the specific function layer of the device that forms in target portion, as integrated circuit or other device (as hereinafter).The example of this patterning device comprises:
Mask.The notion of mask is known in photoetching.It comprises the phase shift type as binary type, alternating phase-shift type and decay, and various hybrid mask types.The layout of this mask in radiation laser beam makes the radiation of inciding on the mask can be according to the pattern on the mask and optionally by transmission (under the situation of transmission mask) or be reflected (under the situation of reflection mask).Under the situation of using mask, supporting construction generally is a mask platform, and it can guarantee that mask is maintained at the ideal position in the incident beam, and this can move relative to light beam if desired.
Program control reflection mirror array.An example of this equipment is the matrix-addressable surface with a viscoelasticity key-course and a reflecting surface.The theoretical foundation of this device is that the addressed areas of (for example) reflecting surface reflects incident light as diffraction light, but not addressable area reflects incident light as non-diffracted light.With a suitable light filter, from beam reflected, filter described non-diffracted light, only keep diffraction light; In this manner, light beam produces pattern according to the addressing pattern of matrix-addressable surface.Another embodiment of program control reflection mirror array utilizes the arranged of tiny mirror, by using suitable internal field, perhaps by using piezoelectric actuator device, makes that each catoptron can be independently about an inclination.Moreover catoptron is a matrix-addressable so that addressable catoptron with different directions with the radiation beam reflection of incident to nonaddressable catoptron; In this manner, the addressable pattern according to the matrix-addressable catoptron carries out composition to folded light beam.Can carry out this required matrix addressing with suitable electronic installation.In above-mentioned two kinds of situations, patterning device comprises one or more program control reflection mirror array.The more information of reflection mirror array can obtain from for example U.S. Pat 5,296,891 and U.S. Pat 5,523,193 and PCT patented claim WO98/38597 and WO 98/33096, and these documents are here introduced as reference.In the situation of program control reflection mirror array, described supporting construction can be framework or worktable, for example described structure can be fix or be movably as required.
Program control LCD array, for example by U.S. Pat 5,229, the 872 this structures that provide, it is here introduced as reference.As mentioned above, supporting construction can be framework or worktable in this case, for example described structure can be fix or be movably as required.
For the sake of simplicity, the remainder of this paper is an example with mask and mask platform specifically under certain situation; , the General Principle of being discussed in such example should be applicable to the patterning device of above-mentioned more wide region.
Lithographic apparatus can be used for for example manufacturing of integrated circuit (IC).In this case, patterning device can produce the circuit pattern corresponding to each layer of IC, and this pattern can be imaged in the target portion of the substrate (silicon chip) that has applied radiation-sensitive materials (resist) layer (for example comprising one or more circuit small pieces (die)).General, single wafer will comprise the whole grid of adjacent target portion, and this adjacent target portion is by optical projection system radiation in succession one by one.Adopting the mask on the mask platform to carry out in the device of composition at present, two kinds of dissimilar machines are arranged.One class lithographic equipment is each target portion of radiation by the whole mask patterns in the single exposure target portion; The so-called wafer stepper of this device.Another kind of device (so-called substep scanister) by scan successively in the given reference direction in projecting beam lower edge (" scanning " direction) mask pattern, and the while edge come each target portion of radiation with the parallel or antiparallel direction synchronous scanning of this direction base station; Because in general, optical projection system has a magnification M (usually＜1), is to the M of mask bench scanning speed doubly to the scan velocity V of base station therefore.Can be as the more information about lithographic equipment described herein from for example obtaining document conduct reference here introducing in the U.S. Pat 6,046,729.
With in the lithographic apparatus manufacture method, (for example in mask) pattern is imaged in the substrate that is covered by one deck radiation-sensitive materials (resist) to small part.Before this image-forming step, can carry out various processing to substrate, as prime, coating resist and soft baking.After exposure, can carry out other processing to substrate, as postexposure bake (PEB), develop, toast firmly and measure/check imaging features.Based on this series of process, the individual layer of the device of for example IC is formed pattern.This patterned layer can be carried out any different processing then, injects (doping), plating, oxidation, a chemical mechanical buffing etc. as etching, ion and finishes all required processing of an individual layer.Multilayer repeats Overall Steps or its variation to each new layer so if desired.Finally, in substrate (wafer) device array appears.Adopt for example cutting or other sawed-off technology that these devices are separated from each other then, individual devices can be installed on the carrier, is connected with pin etc.Further information about these steps can be from for example Peter van Zant's " miniature Integrated circuit chip is made: the semiconductor machining practice is crossed the threshold(Microchip Fabrication:A Practical Guide toSemiconductor Processing) " and a book (third edition, McGraw Hill Publishing Co., 1997, ISBN0-07-067250-4) the middle acquisition introduced as reference here.
For simplicity, optical projection system is called " camera lens " hereinafter; , this term should be interpreted as comprising various types of optical projection systems with extensively anticipating, comprises for example dioptrics device, reflective optics, and catadioptric system.Radiating system can also comprise the functional unit according to arbitrary design in these kind of designs, and this functional unit is used to handle, the projecting beam of shaping or control radiation, and this parts also can jointly or individually be called " camera lens " hereinafter.In addition, lithographic equipment can have two or more base station (and/or two or more mask platform).In this " multi-stag " device, can walk abreast and use these additional stations, perhaps can on one or more platform, carry out preparation process, and one or more other be used for exposure.For example in U.S. Pat 5,969,441 and WO98/40791 in the two-stage lithographic equipment described, here as with reference to introducing.
In lithographic projection apparatus, the information on the mask will be projected onto on the base station in so-called scanning process, and this mask is positioned on the bearing structure, and in this scanning process, bearing structure and base station are synchronized with the movement with constant speed.The power that produces acceleration or retarded velocity may be very big, this be because the acceleration of base station typically 5 to 100m/s 2The order of magnitude, and the weight of base station about 10-200kg typically.If this base station is by means of topworks motion, and this topworks is connected on the base, and reacting force will be delivered on this base so.If this reacting force is directly delivered on the base, will cause the big disturbance that base is located in eigenfrequency (10 to 50Hz typically) so.This will cause the vibration of base, thereby disturb the vibrating isolation system in the projection lens.Then, partial vibration can be delivered on the projection lens.Because base station is the location of carrying out with respect to projection lens,, and then influence imaging process so the vibration of this projection lens will produce servo vibration error.
Utilize U.S. Pat 6,262, the 796 described balance masses of freely assembling, the influence of this reacting force can weaken.This realizes by means of using location topworks to produce reacting force, and should locate topworks between base station and balance mass, like this, when base station when a direction is moved, balance mass will be moved along opposite direction, its displacement equates with base station, and is proportional to the mass ratio of base station and balance mass.Like this, do not have reacting force to be delivered on the base basically, and the synthetic center of gravity of balance mass and base station keep stable basically with respect to base.
If this balance mass of freely assembling will be done the long stroke motion, so in the process of balance mass motion and cable that balance mass is played a role and pipe transmission (transmission), need be guided balance mass, particularly, when balance mass is in vacuum environment, to be difficult to assemble balance mass, thereby increase the volume of device.
Dwindle in the process of lithographic projection apparatus volume in trial, can shorten the required stroke of balance mass by the quality that increases balance mass, its cost is to increase the complexity of balance support quality, and this support is near friction free.
The problems referred to above appear on the bearing structure equally, and it is used to support patterning apparatus, and this patterning apparatus also need move with respect to projection system, and this motion utilizes balance mass to realize.
Summary of the invention
An object of the present invention is to provide an optional mode of freely assembling balance mass, during it addresses the above problem at least in part one.
Can realize above-mentioned purpose and other purpose according to the present invention who is used for lithographic equipment, described in the present invention's paragraph in front, and be characterized in to have described balance mass, this balance mass is connected on the described base through elastic coupling, described like this balance mass just has 0.3 to 10Hz spring eigenfrequency, and the part of described reacting force will be applied on the described base.
Like this, by means of elastic coupling, have only partial reaction power to be delivered on the base.The eigenfrequency of balance mass is preferably 0.3 to 10Hz, because it is as described below, have only the low-frequency vibration meeting to be delivered on the base: because the reacting force that base station and bearing structure motion produce, when its frequency greater than about 10 to 15Hz the time, just be difficult to be delivered on the base, because under this frequency, balance mass will not be subjected to the influence of elastic coupling, thereby its behavior is similar to the free balance mass under this frequency.Harmful disturbance of base station or bearing structure is occurred in frequency typically be higher than the 10Hz place, but balance mass is can not produce big interference in this frequency field.Yet the acceleration force that produces will be delivered on the base because the long stroke of base station or bearing structure moves, and this acceleration force typically has the energy that frequency is lower than 10Hz.Be applied on the balance mass reacting force some be to produce by the spring rate of elastic coupling, and require balance mass only to do the short stroke motion.Should be clear and definite, this low frequency power that is delivered to base is before it produces deleterious effect to device, and its numerical value is quite high.Like this, in the typical photoetching projection system that foundation the present invention realizes, the stroke of balance mass is typically less than about 20mm.An example of elastic coupling is the mechanical spring that comprises leaf spring, damping spring or other type, has magnetic assembly with the spring similar characteristics etc.Should point out further that elastic coupling has the trend that the balance mass of making is returned its equilibrium position.This trend can be brought certain benefit, for example in the initialized process of described location topworks.
In an embodiment of the present invention, balance mass further is supported on the base by means of bearing structure.As an example, this bearing structure can be the air bearing between base and balance mass.So just balance quality supporting role is provided, thereby make balance mass move required stroke along translation direction.
In an embodiment of the present invention, lithographic equipment is to be provided with like this and to install, in the motion process of described base station in location or described bearing structure, the position of the synthetic center of gravity of described base station or described bearing structure and described balance mass also can change with respect to described base.Because elastic coupling is connected to balance mass on the base, so in the motion process of described base station in location or described bearing structure, center of gravity will change its position.
In an embodiment of the present invention, lithographic equipment can also comprise balance mass topworks, is used to control the position of described balance mass.In this effective embodiment, balance mass topworks is parallel to described elastic coupling setting, and wherein balance mass is connected on the described base by means of described balance mass topworks.When this balance mass topworks is used in low frequency balance mass is applied position correction power.Like this, under the low frequency condition, will have big and the low power of frequency is applied on the base along translation direction.Balance mass topworks also can provide damping unit for the balance mass system that is in resonant frequency (quality and the rigidity that is connected to the elastic coupling on the base by balance mass are determined), and further reduces the power that the frequency of transmitting is higher than 10Hz between base and balance mass.
In an embodiment of the present invention, will screen feed-forward process and be applied in the balance mass topworks, so that smoothly be delivered to power on the base.Balance mass topworks can be the topworks of pneumatic type, waterpower formula, electromagnetic type or piezoelectric type for example.
In yet another embodiment of the present invention, lithographic equipment comprises spring-damper system, and itself and described elastic coupling be arranged in parallel, and balance mass is connected on the described base by means of described spring-damper system.Spring-damper system can combine dissimilar spring (machinery, air, magnetic) and dissimilar damper, for example viscous damper, eddy current retarder etc.In order to obtain required transmission characteristic, both can adopt series system between spring and the damper, also can adopt parallel way to connect.Adopt the advantage of the embodiment of passive mode to be, compare with active mode, it provides more cheap more durable solution, but this is a cost to sacrifice some performance.
Preferably, spring-damper system comprises that at least one has the element of spring performance, and it is connected with series system with the element that at least one has damper characteristics.Basically have among the embodiment of spring performance at elastic coupling, this spring-damper system can further be called as the KDK-system.This damper can be the damper of viscous damper or any other type.
Preferably, damper can be an eddy current retarder, because it has advantage aspect durability, reliability, maintainability and the contaminative.The KDK-system also can provide damping unit for the balance mass system that is in resonant frequency (quality and the rigidity that is connected to the elastic coupling on the base by balance mass are determined), and further reduces the power that the frequency of transmitting is higher than 10Hz between base and balance mass.Spring-damper system can be made of the assembly that has spring and damper characteristics concurrently, for example rubber type of material or molten alloy.
In an embodiment of the present invention, what balance mass was played damping action is damper, its ratio of damping b between 0.3 to 0.9, preferably 0.65 to 0.75.Like this, the long stroke reacting force that is applied on the base of base station will can not be exaggerated.
In an embodiment of the present invention, damper and described elastic coupling be arranged in parallel, and balance mass is connected on the described base by means of described damper.Damper can be made of separation assembly, perhaps can itself be made of the elastic coupling with inside damper.
In an embodiment of the present invention, what balance mass was played damping action is damper, and its ratio of damping b is the function of frequency.As an example, can adopt eddy current retarder.And if balance mass topworks is used to produce the active damping vibration of described balance mass, its ratio of damping will be the function of frequency.
In an embodiment of the present invention, lithographic equipment also comprises controller, and it periodically uses the positioning control ring.As an example, this controller can be used for stoping the drift of described balance mass, the friction force that perhaps is used for the compensation balance quality, the lag-effect that perhaps is used to proofread and correct elastic coupling, wherein the drift of balance mass is because the to-and-fro movement of described base station or bearing structure produces.
In an embodiment of the present invention, frequency is lower than 50 to 100% in 3 to 10Hz the reacting force and is applied on the described elastic coupling, and this elastic coupling is positioned on the described base.
In an embodiment of the present invention, lithographic equipment also comprises vacuum chamber, is used to hold base station or bearing structure and balance mass.Balance mass among the present invention is specially adapted to this situation, because it does the short stroke motion.
In an embodiment of the present invention, between the inwall of balance mass and vacuum chamber, be provided with corrugated tube.The short stroke motion of balance mass is corrugated tube to be set become possibility, and such structure can be brought lot of advantages, because any cable and pipe that balance mass is played a role can encapsulate with corrugated tube, therefore needn't satisfy the vacuum requirement, for example these cables and pipe can be the cables that is used for the air hose of air bearing or is used for position transducer.
In an embodiment of the present invention, corrugated tube has constituted at least a portion of elastic coupling.According to the difference of rigidity, corrugated tube can be realized elastic coupling ground function partially or completely, and wherein this elastic coupling is between balance mass and base.
In an embodiment of the present invention, balance mass topworks or spring-damper system pass described corrugated tube and link to each other with described balance mass.
According to of the present invention further describing, a kind of manufacture method of device is provided, may further comprise the steps:
A substrate that is covered to small part by radiation-sensitive materials is provided on base station, and this base station is arranged on the base;
Use radiating system that the projection fibers of radiation is provided;
Use patterning apparatus to make projection fibers have a pattern in its xsect, this patterning apparatus is supported on the bearing structure;
Patterned radiation beam is incident upon in the target portion of described radiation sensitive material layer;
Utilize between described base station or described bearing structure and the balance mass and produce reacting force, described base station or described bearing structure are moved with respect to described base, it is characterized in that: described reacting force partly is delivered on the described base by means of elastic coupling, wherein elastic coupling is coupling in described balance mass on the described base, and the spring eigenfrequency that has of this balance mass is 0.3 to 10Hz.
Although in this article, specifically be used to make IC according to device of the present invention, should understand clearly, this device has other possible application.For example, it can be used for the manufacturing of integrated optics system, the guiding that is used for magnetic domain memory, LCD panel, thin-film head etc. and detection figure etc.It should be appreciated by those skilled in the art that, in this optional range of application, the term that uses in instructions " marking-off plate ", " wafer " or " circuit small pieces " should be thought respectively can be by more generally term " mask ", " substrate " and " target portion " replace.
In this article, the term " radiation " and " beam " that use comprise all types of electromagnetic radiation, comprise that ultraviolet radiation (for example, have 365,248,193,157 or the wavelength of 126nm) and EUV (far-ultraviolet radiation, for example have the wavelength in the 5-20nm scope), and the particle beams of ion beam or electron beam for example.
Description of drawings
Now, referring to appended schematic figures, only describe embodiments of the invention, wherein by means of the mode of example:
Fig. 1 has described the relevant portion of lithographic projection apparatus;
Fig. 2 has described the lithographic projection apparatus according to one embodiment of the invention;
Fig. 3 has described the lithographic projection apparatus according to one embodiment of the invention, and it is applicable to vacuum condition;
Fig. 4 has described the typical curve of reacting force in time domain and frequency domain in scanning process;
Fig. 5 has described in different embodiments of the invention, is delivered to the curve of reacting force in frequency domain on the base;
Fig. 6 has described in different embodiments of the invention, the displacement of balance mass and be delivered to the curve of transformational relation in frequency domain between the reacting force on the base;
Fig. 7 has described the KDK-system according to one embodiment of the invention, and it is connected on the base balance mass;
Fig. 8 has described according to one embodiment of the present of invention, and balance mass is connected to a kind of optional mode on the base;
Fig. 9 has described according to one embodiment of the present of invention, and balance mass is connected to another optional mode on the base;
Figure 10 has schematically described to comprise the KDK-system of eddy current retarder;
Figure 11 has schematically described balance mass, and it has 3 degree of freedom in surface level.
In the accompanying drawings, corresponding reference symbol is represented corresponding components.
Embodiment
Fig. 1 shows the relevant portion of lithographic projection apparatus.This device comprises:
Radiating system Ex, IL is used to provide radiation projecting beam PB (for example I line, UV, EUV radiation, electron beam etc.), and in this object lesson, this radiating system also comprises a radiation source LA;
First Target Station (mask platform) MT is provided with the mask holder that is used to keep mask MA (for example marking-off plate), and be used for this mask is connected with respect to the pinpoint first locating device PM of element PL;
Second Target Station (base station) WT is provided with the substrate holder that is used to keep substrate W (for example applying the silicon wafer of resist), and be used for substrate is connected with respect to the pinpoint second base station locating device PW of element PL;
Projection system (" camera lens ") PL (for example multilayer mirror group) is used for the radiant section of mask MA is imaged on the C of target portion (for example comprising one or more circuit small pieces (die)) of substrate W.
As noted here, this device belongs to reflection-type (for example having reflection mask)., in general, it can also be a transmission-type (for example having transmission mask) for example.In addition, this device can utilize the patterning device of other kind, as the above-mentioned program control reflection mirror array type that relates to.
Radiation source LA (for example lasing discharge excimer laser instrument) produces radiation beam.This beam shines on irradiation system (irradiator) IL more directly or through after the lateral adjustment device as beam expander Ex.Irradiator IL comprises regulating device AM, is used to set the outer and/or interior radius vector that intensity of beam distributes and (is called σ-outer and σ-Nei) usually.In addition, it generally comprises various other parts, as integrator IN and condenser CO.Like this, the light beam PB that shines on the mask MA has ideal uniform and intensity distributions at its xsect.
Should note, radiation source LA among Fig. 1 can place the housing (for example often being this situation) of lithographic projection apparatus when the source is mercury lamp, but also can be away from lithographic projection apparatus, the radiation beam of its generation is guided in this device by the help of directional mirror (for example by); The sort of situation of back normally when light source LA is excimer laser.The present invention and claim comprise this two kinds of schemes.
Light beam PB intersects with the mask MA that remains on the mask table MT then.The light beam PB that passes mask MA is by camera lens PL, and this camera lens focuses on light beam PB on the C of target portion of substrate W.Assisting down of second locating device (with the dried measurement mechanism IF that penetrates), base station WT can accurately move, for example the different C of target portion in location in the light path of light beam PB.Similarly, for example take out mask MA or, can use first locating device that the light path of the relative beam PB of mask MA is accurately located in scan period at machinery from the mask storehouse.Usually, with long stroke module (coarse localization) that does not clearly show among Fig. 1 and short stroke module (accurately location), can realize moving of Target Station MT, WT.Should be pointed out that usually the long stroke module makes base station planar long stroke motion substantially, and the long stroke module of mask platform makes the long stroke motion basically along a direction.Yet in wafer stepper (relative with the substep scanister), mask table MT can be connected with the short stroke actuating unit to impel can carry out short stroke and move in six-freedom degree, perhaps fixing.
Shown device can use according to two kinds of different modes:
1. in step mode, it is motionless substantially that mask table MT keeps, and whole mask images is once throwed (i.e. single " sudden strain of a muscle ") to the C of target portion.Base station WT moves along x and/or y direction then, so that the different C of target portion can be shone by beam PB.
2. in scan pattern, be identical situation substantially, but the C of target portion that is given is not exposed in single " sudden strain of a muscle ".The substitute is, mask table MT moves with speed v along given direction (so-called " direction of scanning, for example y direction "), so that projection beam PB scans whole mask images; Simultaneously, base station WT moves with speed V=Mv simultaneously along identical or opposite direction, and wherein M is the magnification (M=1/4 or 1/5 usually) of camera lens PL.In this mode, can expose and compare the big C of target portion, and not sacrifice resolution.
WT describes the present invention with the reference substrate platform.Yet the present invention is equally applicable to mask table MT.
As can be seen from Figure 1, typical lithographic equipment comprises base BF, can settle different assemblies on it.
As an example, figure 2 illustrates the different parts of on base, settling.Shown base BF among the figure, it preferably is connected on the ground 10 securely.By projection system PL being installed on the measurement bracket (metrology frame) 50, projection system PL can be kept apart from the vibration of base BF, wherein utilize the initiatively flexible suspension system 55 of (active) vibration isolation system (AVIS), with measurement bracket 50 and appropriate the linking to each other of base BF.Topworks 20 drives the motion of wafer station, and reaction force acts is on balance mass (BM).Elastic coupling 150 is connected between balance mass and the base.The rigidity of elastic coupling 150 is so selected, and makes balance mass be installed on the base BF, the spring eigenfrequency on its translation (level) face 0.3 and 10Hz between, preferably 1 to 6Hz.Suitable spring eigenfrequency is about 3Hz.
Spring eigenfrequency f0 can calculate according to formula (1):
f 0 = 1 2 π k spring m BM - - - ( 1 )
Wherein, K SpringBe the rigidity of the spring of elastic coupling 150, m BMIt is the quality of balance mass BM.The spring eigenfrequency of balance mass is arranged on can guarantees in 0.3 to the 10Hz scope to apply the big and low power of frequency to base from balance mass, and its can be along the translation surface level (frequency during less than 3Hz this power maximum be about 5000N) in both direction.In this example, be provided with damper 170 and balance mass topworks 100, wherein damper 170 be arranged in parallel with elastic coupling 150.Optionally, elastic coupling 150, damper 170 and balance mass topworks 100 can enclose in the corrugated tube 120.Like this, elastic coupling, damper and balance mass topworks just are sealed and separate with base station WT and the residing compartment of balance mass.Use corrugated tube that the restrictive condition to elastic coupling, damper and balance mass topworks has been reduced.Balance mass topworks 100 is used to proofread and correct the position of balance mass, and balance mass has from the trend of tram drift.For example, this drift can be regarded as hysteresis phenomenon (hysteresis), is the result of phase mutual friction between base BF and the balance mass BM.By using controller, correction can be used as closed-loop control, its middle controller can be controlled balance mass topworks 100, and if desired then periodically (for example, every millisecond) apply a power, make balance mass BM be located substantially on the centre position, so that stop the balance mass drift, this drift comes from the back and forth movement of base station.
Topworks 100 also is used for the motion of balance mass BM is produced damping, thereby avoids torsional oscillation, i.e. the resonance of balance mass BM.Alternatively, this function also can be realized by mechanical passive damping device 170 independently.No matter adopt the damping unit of which kind of form, relative damping factor b between 0.5 and 1, more preferably is between 0.65 and 0.75 preferably.If adopt balance mass topworks 100, then it can be used as active damper, and its ratio of damping b is variable and is the function of frequency.For example, reach threshold frequency (for example, in 0.3 to 20Hz scope) when ratio of damping b=0.7, ratio of damping will reduce afterwards, thereby when frequency was infinity, ratio of damping was 0.Like this, compare with the situation that ratio of damping is constant, it is less that balance mass passes to the power of base during high frequency.When the frequency of base station WT motion during near the spring eigenfrequency of balance mass BM, this damping unit can reduce the amplitude that balance mass passes to the power of base.
Utilize the screening feed-forward process, balance mass topworks 100 also can be used for smoothly being delivered to the distribution of the low frequency power of base.This program is achieved in that foreseeable reacting force on the balance mass BM passed to base BF through low pass filter, and applies a power by balance mass topworks 100 to balance mass BM, and this power is the sharp change of reacting force smoothly.Under any circumstance, not having high frequency components is delivered on the base.
Fig. 3 shows, and a kind of optional configuration of different assemblies is set on base BF, and it is suitable for vacuum application.In this example, base station WT is positioned on the base station support SF (it is fixedly attached on the base BF) by coupling arrangement 12.Topworks 20 drives the motion of wafer station, and reaction force acts is on balance mass (BM).Elastic coupling 150 is parallel with balance mass topworks 100, and damper 170 is connected between balance mass and the base station support.In the present embodiment, projection system PL, balance mass BM and base station WT enclose in the vacuum chamber VC, and vacuum chamber is fixedly attached on the base BM.
Base station WT and balance mass BM are assemblings like this, and it makes that the motion in the surface level is friction free basically, and this surface level is parallel to the surface of base station support SF.For example, not having friction and can realize like this, make base station WT be suspended in the balance mass top, and be balance mass equipment air bearing, perhaps is base station and balance mass equipment air bearing, so that base station support SF can support their weight simultaneously.Balance mass also can be suspended in elastic mechanical or air spring top.
Because the effect of location topworks 20 has produced reacting force, base station WT and balance mass BM relative translation.
Balance mass BM elasticity is coupled on the base station support SF, therefore utilizes elastomeric spring coupling mechanism 150 correspondingly to be coupled on the base BF.The rigidity of elastic coupling 150 is selected like this, promptly makes balance mass be arranged on the wafer station support SF, and is 0.3 to 10Hz in the spring eigenfrequency of translation (level) in-plane equilibrium quality, is preferably 1 to 6Hz.Suitable spring eigenfrequency is about 3Hz.
Fig. 4 has represented accelerating force and decelerative force, and these power typically are present in the scanning process.Provided the expression in time domain and frequency domain of accelerating force and decelerative force simultaneously.In this example, Zui Da accelerating force is about 1500N.Show the energy of power spectrum or cell frequency bandwidth simultaneously.Usually, accelerating force distribution power spectrum shows that big accelerating force appears under the situation that frequency is lower than 20Hz.When being higher than this frequency, residual amount of energy is very little.
When the spring eigenfrequency of balance mass is in 0.3 to the 10Hz scope, the short stroke translation motion of base station WT is difficult to be delivered on the base, this is because balance mass is operated under traditional free quality mode, when wherein the short stroke translation motion of base station WT appears at frequency and is about 10-15Hz and Geng Gao.Yet, long stroke translation motion for base station WT, at least a portion reacting force is delivered on the base station support SF, correspondingly also is delivered on the base BF, and wherein the long stroke translation motion of base station WT appears on the lower frequency that is lower than about 15Hz.Therefore, along with a part of reacting force (50 to 100%) is applied on the base station support SF by elastic coupling 150, the displacement of balance mass in the time of must reducing low frequency movement.Have been found that thisly to be positioned at big on the horizontal translation direction and the low power of frequency can be applied to base BF and goes up (general about 1000-1500N when frequency is lower than 3Hz), but can not cause harmful effect to the performance of device.
Fig. 5 shows in a plurality of embodiment of the present invention, and balance mass is delivered to the Bode diagram of the reacting force on the base.The figure shows the reacting force of balance mass and the ratio (representing) and the corresponding frequency Hz of base acting force with dB.As benchmark, the family curve of the balance mass of freely laying (being newton's balance mass) is represented by curve G0.Desirable balance quality according to the work of newton's " acting force=reacting force " law can absorb whole energy, therefore can not transmit reacting force to base.Imperfect newton's balance mass can partly be transmitted very little low frequency reacting force.Newton's balance mass also has shortcoming, its motion or the mobile mass ratio that equals balance mass and base station.If elastic coupling is connected between balance mass and the base, the drift of balance mass will significantly reduce so.Yet the reacting force of low frequency is directly to transmit (to base), and as shown in the curve G1, when reaching resonant frequency, the acting force of base is higher than the reacting force of balance mass far away.When being higher than resonant frequency, the reacting force that the undamped balance mass is delivered on the base will reduce once more, and constitute mechanical filter, and it has-decay (roll-off) of 40dB/dec.Shown in curve G3, under resonant frequency, by the magnification that the passive damping device can reduce the amplitude of drifting about is set, wherein the passive damping device is arranged between balance mass and the base, and parallel with elastic coupling.Yet the mechanical filter of this damping balance quality only has-decay of 20dB/dec.
For for the damping element that constitutes that damper is linked to each other with spring, the commingled system that this elastic coupling and spring-damper system constitutes is also referred to as the KDK-system, it has once more-decay of 40dB/dec, although the filtration of system originates in higher frequency.Shown in curve G3, the performance of balance mass is higher than the performance of the damping balance quality shown in the curve G2 in the KDK-system.
Used control loop in another embodiment, it is made of topworks and position transducer, and wherein topworks is arranged between balance mass and the base, and position transducer is used to measure the position of balance mass with respect to base.Referring to curve G4, by adjusting, not only to obtain the damping action under the resonant frequency but also will keep-decay significantly of 40dB/dec to controller.
Fig. 6 shows the Bode diagram of transformational relation between the motion of balance mass and the reacting force.When low frequency, the motion of balance mass is as the function of input power, and it is proportional to the inverse of the rigidity of elastic coupling.Therefore, between balance mass and the base 1 * 10 5The rigidity of N/m will produce 1 * 10 5The displacement of m, (therefore, transformational relation is 1 * 10 corresponding to the input power of 1N in this displacement -5M/N or-100dB).For the input power of 1500N, corresponding displacement approximately is 15mm.If rigidity increases, motion will reduce identical magnitude, and the frequency band of power output will increase (seeing Fig. 6 and formula 1).Therefore, the flexible resilient coupling mechanism can produce flexible force (strong balance mass filtrator) and bigger drift.The rigidity elastic coupling can produce rigidity power (weak filtrator) and less drift.Can between the strainability of balance mass drift and power, find appropriate trading off.The elastic coupling that use has nonlinear characteristic is exactly in order to reach this compromise.Linear and nonlinear spring element can be realized this compromise.These spring elements can be arranged between balance mass and the base, and when balance mass was left the equilibrium position, the rigidity of spring element can increase gradually.If damper is not set, displacement will be exaggerated that (this amplification is shown in Figure 6, is approximately 100 times near resonant frequency! ).For fear of this thing happens, damping element must combine with elastic coupling.In Fig. 6, curve G1 has represented the characteristic of undamped system, and curve G2 has represented the characteristic of damping system, and curve G3 has represented the characteristic of KDK-system, and curve G4 has represented the characteristic with elastic coupling after the balance mass gear train combines.(G4), amplification has been subjected to inhibition for G2, G3, and in undamped system, amplification occurs in the resonant frequency place usually in damping system.For higher frequency, all systems all have-decay of 40dB/dec, therefore, the reacting force of high frequency only makes balance mass produce very little displacement.
Fig. 7 shows one embodiment of the present of invention, and wherein the KDK system is arranged between balance mass and the base.The KDK system is a passive system, and it comprises the elastic coupling 150 that be arranged in parallel with spring-damper system 180, and so-called spring-damper system is that the element that will have spring performance links to each other with the element with damper characteristics.This KDK system can be used with corrugated tube 120, and this corrugated tube is used to encapsulate the KDK system, thereby can use material or the assembly that does not require the KDK system vacuum.Corrugated tube can partly or entirely be realized the function of elastic coupling 150.KDK system shown in the figure also can be used for embodiment as shown in Figure 3, replaces elastic coupling wherein, and is used with balance mass topworks.
Under vacuum condition, balance mass BM is connected to by metallic bellows 120 on the inwall of vacuum chamber VC, and this corrugated tube can be made by the welding koji tray, also can make by form gauffer on the thin-walled extra heavy pipe.Be provided with after the corrugated tube, elastic coupling 150 and topworks 100 or KDK system just can be arranged on the outside of vacuum chamber VC, therefore designing requirement has also just reduced accordingly, because they needn't satisfy vacuum requirement (for example satisfying exhaust (out-gassing) standard).In addition, pipe or the cable in the corrugated tube also can play a role to balance mass BM.Because in base station WT location process, balance mass BM is only done the short stroke motion, so can use corrugated tube 120.Corrugated tube has constituted at least a portion of elastic coupling, and this elastic coupling is between balance mass BM and base.
A kind of optional mode that balance mass BM is connected with base has been shown among Fig. 8, and in this embodiment, base has constituted portion's chamber-separating wall of vacuum chamber VC.Elastic coupling 150 and balance mass topworks 100 are placed in second vacuum chamber 210, and this second vacuum chamber 210 is positioned at the base station vacuum chamber, and can reach the higher pressure than base station vacuum chamber VC very easily.Connecting elements 200 is connected to base station vacuum chamber chamber wall VC with elastic coupling 150 and balance mass execution member 100.Between second vacuum chamber 200 and connection chamber, need to be provided with seal and corrugated tube.Fig. 9 shows another optional mode, and connecting elements 200 is connected to balance mass BM in elastic coupling 150 and the balance mass topworks 100, and this balance mass topworks 100 is directly connected on the base BF.In the present embodiment, base station vacuum chamber VC and base are separated setting, and balance mass topworks just needn't satisfy the vacuum requirement like this, because it is positioned at the vacuum chamber outside.Between base station vacuum chamber VC and connecting elements 200, need to seal.
Figure 10 schematically shows the KDK system that is connected between balance mass BM and the base BF.Balance mass is supported on the bearing system 215.The KDK system comprises elastic coupling 150 and spring-damper system, and this spring-damper system comprises spring 240 and eddy current retarder, and this eddy current retarder comprises magnetic sheet 220 and is positioned at conductor block 230 between two magnetic sheets.
Balance mass BM can have 1 to 6 degree of freedom, but preferably 3 degree of freedom (in surface level) and 6 degree of freedom (in surface level and vertical plane).When base or bearing structure motion, the coupling mechanism between balance mass and carrier described in the present invention can have all degree of freedom.Corresponding to different degree of freedom, the coupling mechanism between balance mass and carrier can have different characteristics.Elastic coupling also can be used with balance mass topworks and/or spring-damper system, and corresponding to different degree of freedom, spring-damper system can have different characteristics.As an example, Figure 11 is the top view of an optional mode, and wherein elastic coupling 150 is the springs between balance mass BM and base BF.Should be clear and definite, described elastic coupling can be used with the KDK system, or is used with damper and balance mass topworks.Should also be noted that in this mode though only used spring on X and Y direction, balance mass has three degree of freedom (X, Y and Z).This define method for the elastic coupling with different degree of freedom also may be used on surpassing on three the degree of freedom.
Although specific embodiments of the invention described above should be appreciated that also available other the mode of the present invention is implemented rather than as described.This explanation is not intended to limit the present invention.

Claims (27)

1. lithographic projection apparatus comprises:
Radiating system is used to produce the light beam of radiation;
Bearing structure is used to support patterning apparatus, and this patterning apparatus is used for according to required pattern described radiation laser beam being carried out composition;
Base station is used to keep a substrate;
Projection system is used for described patterned radiation laser beam is projected the target portion of described substrate;
A base;
A balance mass; With
A location topworks, be connected between described base station or described bearing structure and the described balance mass, be used between described balance mass and described base station or described bearing structure, producing reacting force, thereby described base station or described bearing structure are positioned with respect to described projection system
It is characterized in that: described balance mass is coupling on the described base by means of an elastic coupling, and the spring eigenfrequency of described balance mass is 0.3 to 10Hz, so that only some is applied on the described base in the described reacting force.
2. according to the device of claim 1, it is characterized in that: this balance mass by means of a bearing by described base supports.
3. according to the device of claim 1, this device is by so configured and disposed, make that the position of the synthetic center of gravity of described base station or described bearing structure and described balance mass also can change with respect to described base in the motion process of described base station in location or described bearing structure.
4. according to each device in the claim 1 to 3, also comprise balance mass topworks, be used to control the position of described balance mass.
5. according to the device of claim 4, wherein said balance mass topworks is parallel to described elastic coupling setting, and this balance mass is connected on the described base by means of described balance mass topworks.
6. according to each device in the claim 1 to 3, also comprise spring-damper system, itself and described elastic coupling be arranged in parallel, and described balance mass is connected on the described base by means of described spring-damper system.
7. according to the device of claim 6, wherein said spring-damper system comprises that at least one has the element of spring performance, and it is connected with series system with the element that at least one has damper characteristics.
8. according to the device of claim 7, wherein said spring-damper system comprises eddy current retarder.
9. according to the device of claim 4, wherein in use, the vibration of the described balance mass that is caused by described elastic coupling is by the damping effectively of described balance mass topworks.
10. according to each device in the claim 1 to 3, wherein in use, the vibration of the described balance mass that is caused by described elastic coupling comes damping by a damper, and the ratio of damping b that this damper has is between 0.5 to 1.0.
11. according to each device in the claim 1 to 3, wherein in use, the vibration of the described balance mass that is caused by described elastic coupling comes damping by a damper, the ratio of damping b that this damper has is between 0.65 to 0.75.
12. according to the device of claim 10, wherein said damper and described elastic coupling be arranged in parallel, and balance mass is coupled on the described base by means of described damper.
13. according to the device of claim 9, what wherein described balance mass is played damping action is damper, its ratio of damping is the function of frequency.
14. device according to claim 4, also comprise controller, be used to control described balance mass topworks and periodically use the positioning control ring, stop the drift of described balance mass substantially, the drift of wherein said balance mass is because the to-and-fro movement of described base station or described bearing structure produces.
15., wherein has frequency and be lower than 50 to 100% in 3 to 10Hz the described reacting force and be applied on the described elastic coupling, and this elastic coupling is positioned on the described base according to each device among the claim 1-3.
16., wherein between described balance mass and described base, be extended with corrugated tube according to each device among the claim 1-3.
17., also comprise a vacuum chamber that contains described base station or described bearing structure and described balance mass according to each device among the claim 1-3.
18. according to the device of claim 17, wherein said base constitutes portion's chamber-separating wall of described vacuum chamber, and is extended with corrugated tube between described balance mass and described chamber wall.
19. according to the device of claim 16, wherein said corrugated tube constitutes at least a portion of described elastic coupling.
20. according to the device of claim 18, wherein said balance mass topworks or described spring-damper system pass described corrugated tube and link to each other with described balance mass.
21. according to each device among the claim 1-3, the rigidity that it is characterized in that described elastic coupling is the function of balance mass with respect to the relative position of base.
22. according to the device of claim 4, it is characterized in that also comprising the screening feedforward controller, be used to control balance mass topworks.
23., it is characterized in that described elastic coupling being applied on the described balance mass with at least 3 degree of freedom according to each device among the claim 1-3.
24., it is characterized in that this patterning apparatus comprises program control reflection mirror array according to each device among the claim 1-3.
25. the manufacture method of a device comprises step:
Be arranged on by base station and support a substrate that is covered by radiation sensitive material layer to small part on the base station;
The light beam of radiation is provided;
Use patterning apparatus to make radiation laser beam have a pattern in its xsect, this patterning apparatus is supported on the bearing structure;
Patterned radiation laser beam is incident upon in the target portion of described radiation sensitive material layer;
Utilize between described base station or described bearing structure and a balance mass and produce reacting force, described base station or described bearing structure are moved with respect to described base,
It is characterized in that: described reacting force partly is delivered on the described base by means of an elastic coupling, and wherein elastic coupling is coupling in described balance mass on the described base, and the spring eigenfrequency that has of this balance mass is 0.3 to 10Hz.
26. a lithographic projection apparatus comprises:
Radiating system is used to produce the light beam of radiation;
Bearing structure is used to support program control reflection mirror array, and this program control reflection mirror array is used for according to required pattern described radiation laser beam being carried out composition;
Base station is used to keep a substrate;
Projection system is used for described patterned radiation laser beam is projected the target portion of described substrate;
A base;
A balance mass; With
A location topworks, be connected between described base station or described bearing structure and the described balance mass, be used between described balance mass and described base station or described bearing structure, producing reacting force, thereby described base station or described bearing structure are positioned with respect to described projection system
It is characterized in that: described balance mass is coupling on the described base by means of an elastic coupling, and the spring eigenfrequency of described balance mass is 0.3 to 10Hz, so that only some is applied on the described base in the described reacting force.
27. the manufacture method of a device comprises step:
Be arranged on by base station and support a substrate that is covered by radiation sensitive material layer to small part on the base station;
The light beam of radiation is provided;
Use program control reflection mirror array to make radiation laser beam have a pattern in its xsect, this program control reflection mirror array is supported on the bearing structure;
Patterned radiation laser beam is incident upon in the target portion of described radiation sensitive material layer;
Utilize between described base station or described bearing structure and a balance mass and produce reacting force, described base station or described bearing structure are moved with respect to described base,
It is characterized in that: described reacting force partly is delivered on the described base by means of an elastic coupling, and wherein elastic coupling is coupling in described balance mass on the described base, and the spring eigenfrequency that has of this balance mass is 0.3 to 10Hz.
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