CN1264020C - Micrograving acceleration-grade capacitor-type acceleration sensor - Google Patents
Micrograving acceleration-grade capacitor-type acceleration sensor Download PDFInfo
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- CN1264020C CN1264020C CN 200310106002 CN200310106002A CN1264020C CN 1264020 C CN1264020 C CN 1264020C CN 200310106002 CN200310106002 CN 200310106002 CN 200310106002 A CN200310106002 A CN 200310106002A CN 1264020 C CN1264020 C CN 1264020C
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- polysilicon
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- capacitor
- heavy doping
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Abstract
The present invention discloses a microgravity acceleration level capacitance type acceleration sensor used for microelectronic machines, which is composed of a supporting edge, a capacitor composed of a capacitance moving pole plate and a capacitance fixed pole plate, and a mass block, wherein anchor regions are respectively arranged on the supporting edge and the capacitor. The anchor region arranged on the supporting edge is connected with the anchor region arranged on the capacitor through a cantilever beam. The moving pole plate of the capacitor is composed of a movable lower electrode of concentrated doped boron and a movable upper electrode of polysilicon, and an anchor region of a movable pole plate is arranged between the movable lower electrode of concentrated doped boron and the movable upper electrode of polysilicon. The capacitance fixed pole plate is fixed on the supporting edge and between the movable lower electrode of concentrated doped boron and the movable upper electrode of polysilicon, and the mass block is a polysilicon mass block which is arranged on the movable lower electrode of concentrated doped boron. The mass of the mass block is reduced by the present invention, but the magnitude of sensitive capacitance is not changed. A simple processing technology is used, and the requirement of sensor closed-loop control can be met by the rigidity of a polysilicon fixed electrode.
Description
One, technical field
The invention belongs to microelectromechanical systems (MEMS) technical field, relate in particular to a kind of microgravity acceleration (μ g) level capacitance acceleration transducer.
Two, background technology
Adopt the resolution of the capacitance acceleration transducer of surface working to be approximately a hundreds of microgravity acceleration (μ g) fully, the high resolving power capacitance acceleration transducer that reaches microgravity acceleration (μ g) level for integrated resolution generally need adopt body silicon processing technique.1997, people such as Yazdi utilize body silicon processing technique integrated resolution can reach the capacitance acceleration transducer of microgravity acceleration (μ g) level, this method two polysilicon fixed electordes up and down need be designed to "T"-shaped, middle whole mass serves as movable electrode, need carry out multi-time two-sided photoetching, needs two-sided lead-in wire in addition, processing technology complexity, sensor are difficult for being integrated on the same silicon chip with interface circuit.1999, people such as Yazdi have improved this structure (N.Yazdi, et.al, " A highsensitivity capacitive microaccelerometer with a folded-electrode structure " Iht.Micro Electro Mechanical Systems Conf., pp.600-605, Jan 1999, Twelfth), but because can't be under the prerequisite that does not change the sensitization capacitance size, reduce the quality of mass, the polysilicon fixed electorde still need be designed to T-shape, the difficulty of processing height, and yield rate is low.
Three, summary of the invention
The invention provides a kind of microgravity AL Acceleration Level capacitance acceleration transducer that helps improving measuring accuracy and measurement range and be easy to process, the present invention can adopt surface working and part body post-process treatment technology to make.
The present invention adopts following technical scheme:
A kind of microgravity AL Acceleration Level capacitance acceleration transducer that is used for microelectron-mechanical, by bearing edge 1, form by capacitor and mass 3 that electric capacity movable plate electrode and capacitor fixed plate 2 constitute, on bearing edge 1 and capacitor, all be located at anchor district 4 and 5, the anchor district 4 that is located on the bearing edge l links to each other with anchor district 5 on being located at capacitor by semi-girder 6, it is characterized in that the capacitor movable plate electrode is made up of movable bottom electrode 7 of dense boron heavy doping and the movable top electrode 8 of polysilicon, but between movable bottom electrode 7 of dense boron heavy doping and the movable top electrode 8 of polysilicon, be provided with movable plate electrode anchor district 9, capacitor fixed plate 2 fixing with bearing edge 1 on and between movable bottom electrode 7 of dense boron heavy doping and the movable top electrode 8 of polysilicon, mass 3 is the polysilicon mass and is located on the movable bottom electrode 7 of dense boron heavy doping.
The present invention can also adopt following technical measures further to improve its performance:
(1) on movable bottom electrode of dense boron heavy doping and the movable top electrode of polysilicon, is respectively equipped with damping hole;
(2) semi-girder is folded beam and is linked to each other by the movable top electrode of partially folded beam and polysilicon, and partially folded beam links to each other with the movable bottom electrode of dense boron heavy doping;
(3) the present invention has at least a semi-girder to be electrically connected with the movable top electrode of polysilicon, and all the other semi-girders are electrically connected with the movable bottom electrode of dense boron heavy doping by the anchor district.
Compared with prior art, the present invention has following technique effect:
1. the present invention reduces the quality of mass, but does not change the size of sensitization capacitance, adopts simple machining process, and polysilicon fixed electorde rigidity just can satisfy the needs of sensor closed-loop control; Can on triple electrode, all etch damping hole, reduce damping, thereby reduce the noise of sensor; Sensor construction can be integrated on the same silicon chip with metering circuit, realizes that monolithic is integrated, can improve measuring accuracy and measurement range greatly.And invention has adopted polysilicon-polysilicon silicon-dense boron heavy doping from the electrode structure that stops layer, makes it can adopt surface working and the simple body processing technology of part to realize, thereby has reduced difficulty of processing.
2. the present invention has offered damping hole at capacitor plate, the air damping when these damping holes can reduce the battery lead plate motion, thus more favourable to the raising of resolution.
3. the employing of folded beam, making the present invention have the unrelieved stress of being subjected to influences little advantage.Partially folded beam links to each other with the movable top electrode of polysilicon, and partially folded beam links to each other with dense boron heavy doping lower electrode plate, can make the present invention have electrode and draw advantage simply and easily.
Four, description of drawings
Fig. 1 is the three-dimensional simple view of structure of the present invention.
Fig. 2 is the 3-D view of mass among Fig. 1.
Fig. 3 is the side view of structure of the present invention.
Fig. 4 is the top view of structure of the present invention.
Fig. 5 is the concise and to the point process chart of structure of the present invention.
Five, specific embodiments
A kind of microgravity AL Acceleration Level capacitance acceleration transducer that is used for microelectron-mechanical, by bearing edge 1, form by capacitor and mass 3 that electric capacity movable plate electrode and capacitor fixed plate 2 constitute, on bearing edge 1 and capacitor, all be located at anchor district 4 and 5, the anchor district 4 that is located on the bearing edge 1 links to each other with anchor district 5 on being located at capacitor by semi-girder 6, it is characterized in that the capacitor movable plate electrode is made up of movable bottom electrode 7 of dense boron heavy doping and the movable top electrode 8 of polysilicon, but between movable bottom electrode 7 of dense boron heavy doping and the movable top electrode 8 of polysilicon, be provided with movable plate electrode anchor district 9, on the fixing and bearing edge 1 of capacitor fixed plate 2 and between movable bottom electrode 7 of dense boron heavy doping and the movable top electrode 8 of polysilicon, mass 3 is the polysilicon mass and is located on the movable bottom electrode 7 of dense boron heavy doping, on movable bottom electrode 7 of dense boron heavy doping and the movable top electrode 8 of polysilicon, be respectively equipped with hole 10 and 11, semi-girder 6 is for folded beam and have at least the movable top electrode 8 of a semi-girder and polysilicon to be electrically connected, and all the other semi-girders are electrically connected with the movable bottom electrode 7 of dense boron heavy doping by anchor district 5.
Below in conjunction with Fig. 5, provided the concise and to the point processing technology step of structure of the present invention, the dense boron diffusion heavy doping in silicon chip surface zone that at first will be processed as high score rate capacitance acceleration transducer mass be about 4.5 microns as back side anisotropic etch stop layer certainly, dense boron heavy doping (Fig. 5: a, b, c) is not carried out in the damping hole zone that stops layer certainly; Overload protection (the Fig. 5: d) that 1 micron of the silicon substrate back-etching degree of depth is used for sensor; Other structure of integrated sensor (Fig. 5: e, f, g, h, i, j, k, l, m, n, o) then; With EPW silicon chip is carried out back side anisotropic etch again, obtain mass (Fig. 5: p) that quality suitably reduces; In addition, the operation of fluting on sacrifice layer PSG is arranged between f, the g and between l, the n in the process flow diagram, structure generation adhesion when preventing that sacrifice layer from discharging; Carve damping hole when POLY1 and POLY2 etching simultaneously; Also have metal lead wire hole etching between p, the q, evaporation of aluminum anti-carves aluminium and forms metal pressure-welding block processing steps such as (lead-in wires); Utilize photoresist to make the mask releasing sacrificial layer at last.
Claims (4)
1. microgravity AL Acceleration Level capacitance acceleration transducer that is used for microelectron-mechanical, by bearing edge (1), form by capacitor and mass (3) that electric capacity movable plate electrode and capacitor fixed plate (2) constitute, on bearing edge (1) and capacitor, be equipped with anchor district (4 and 5), the anchor district (4) that is located on the bearing edge (1) links to each other with anchor district (5) on being located at capacitor by semi-girder (6), it is characterized in that the electric capacity movable plate electrode is made up of movable bottom electrode of dense boron heavy doping (7) and the movable top electrode of polysilicon (8), at the movable bottom electrode of dense boron heavy doping (7) and the movable top electrode of polysilicon (8) but between be provided with the anchor district (9) of movable plate electrode, capacitor fixed plate (2) is fixed on the bearing edge (1) and is positioned between movable bottom electrode of dense boron heavy doping (7) and the movable top electrode of polysilicon (8), and mass (3) is the polysilicon mass and is located on the movable bottom electrode of dense boron heavy doping (7).
2. microgravity AL Acceleration Level capacitance acceleration transducer according to claim 1 is characterized in that being respectively equipped with damping hole (10 and 11) on movable bottom electrode of dense boron heavy doping (7) and the movable top electrode of polysilicon (8).
3. microgravity AL Acceleration Level capacitance acceleration transducer according to claim 1 and 2, it is characterized in that semi-girder (6) links to each other for folded beam and by the movable top electrode of partially folded beam and polysilicon (8), partially folded beam links to each other with the movable bottom electrode of dense boron heavy doping (7).
4. microgravity AL Acceleration Level capacitance acceleration transducer according to claim 1, it is characterized in that having at least a semi-girder to be electrically connected with the movable top electrode of polysilicon (8), all the other semi-girders are electrically connected with the movable bottom electrode of dense boron heavy doping (7) by anchor district (5).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200310106002 CN1264020C (en) | 2003-10-08 | 2003-10-08 | Micrograving acceleration-grade capacitor-type acceleration sensor |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200310106002 CN1264020C (en) | 2003-10-08 | 2003-10-08 | Micrograving acceleration-grade capacitor-type acceleration sensor |
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| Publication Number | Publication Date |
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| CN1529172A CN1529172A (en) | 2004-09-15 |
| CN1264020C true CN1264020C (en) | 2006-07-12 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN 200310106002 Expired - Fee Related CN1264020C (en) | 2003-10-08 | 2003-10-08 | Micrograving acceleration-grade capacitor-type acceleration sensor |
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Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102006058747A1 (en) * | 2006-12-12 | 2008-06-19 | Robert Bosch Gmbh | Micromechanical z-sensor |
| CN102616728B (en) * | 2008-10-29 | 2015-07-01 | 原相科技股份有限公司 | Micro-electromechanical system element, out-of-plane sensor and manufacture method of micro-electromechanical system element |
| CN102155987B (en) * | 2010-12-31 | 2012-06-13 | 北京遥测技术研究所 | Differential capacitor type micro-vibration sensor |
| CN102616733B (en) * | 2012-04-17 | 2014-12-31 | 中国工程物理研究院电子工程研究所 | Processing method of double-mask heavy boron-doped silicon on insulator (SOI) micro electro mechanical system (MEMS) |
| CN103728467B (en) | 2012-10-16 | 2016-03-16 | 无锡华润上华半导体有限公司 | Plane-parallel capacitor |
| CN110470862B (en) * | 2019-08-16 | 2021-07-02 | 扬州华测光电技术有限公司 | Micro-gravity acceleration level capacitive acceleration sensor for micro-electronic machinery |
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2003
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