CN121889541A - 碳化硅单晶的制造方法及碳化硅单晶的制造装置 - Google Patents

碳化硅单晶的制造方法及碳化硅单晶的制造装置

Info

Publication number
CN121889541A
CN121889541A CN202480060071.2A CN202480060071A CN121889541A CN 121889541 A CN121889541 A CN 121889541A CN 202480060071 A CN202480060071 A CN 202480060071A CN 121889541 A CN121889541 A CN 121889541A
Authority
CN
China
Prior art keywords
silicon carbide
crucible
single crystal
raw material
seed crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202480060071.2A
Other languages
English (en)
Chinese (zh)
Inventor
杉山尚宏
鹰羽秀隆
近藤宏行
松井正树
汤川博喜
大矢信之
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
Denso Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denso Corp filed Critical Denso Corp
Publication of CN121889541A publication Critical patent/CN121889541A/zh
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00Single-crystal growth by condensing evaporated or sublimed materials
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/36Carbides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN202480060071.2A 2023-09-22 2024-09-02 碳化硅单晶的制造方法及碳化硅单晶的制造装置 Pending CN121889541A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2023159117A JP2025050363A (ja) 2023-09-22 2023-09-22 炭化珪素単結晶の製造方法および炭化珪素単結晶の製造装置
JP2023-159117 2023-09-22
PCT/JP2024/031477 WO2025063035A1 (ja) 2023-09-22 2024-09-02 炭化珪素単結晶の製造方法および炭化珪素単結晶の製造装置

Publications (1)

Publication Number Publication Date
CN121889541A true CN121889541A (zh) 2026-04-17

Family

ID=95072793

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202480060071.2A Pending CN121889541A (zh) 2023-09-22 2024-09-02 碳化硅单晶的制造方法及碳化硅单晶的制造装置

Country Status (3)

Country Link
JP (1) JP2025050363A (https=)
CN (1) CN121889541A (https=)
WO (1) WO2025063035A1 (https=)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4735622B2 (ja) * 2007-08-28 2011-07-27 株式会社デンソー 炭化珪素単結晶の製造装置
JP4957672B2 (ja) * 2008-07-11 2012-06-20 株式会社デンソー 炭化珪素単結晶の製造装置の製造方法および炭化珪素単結晶の製造方法
JP5240100B2 (ja) * 2009-06-30 2013-07-17 株式会社デンソー 炭化珪素単結晶の製造装置
JP5327126B2 (ja) * 2010-04-14 2013-10-30 株式会社デンソー 炭化珪素単結晶の製造方法および製造装置
JP5613604B2 (ja) * 2011-03-28 2014-10-29 昭和電工株式会社 炭化珪素単結晶製造装置、炭化珪素単結晶の製造方法及びその成長方法
JP2015020938A (ja) * 2013-07-22 2015-02-02 住友電気工業株式会社 炭化珪素結晶の製造装置、当該装置の製造方法、および当該装置を用いた炭化珪素結晶の製造方法

Also Published As

Publication number Publication date
JP2025050363A (ja) 2025-04-04
WO2025063035A1 (ja) 2025-03-27

Similar Documents

Publication Publication Date Title
JP3961750B2 (ja) 単結晶の成長装置および成長方法
JP4748067B2 (ja) 炭化珪素単結晶の製造方法および製造装置
JP4962205B2 (ja) 炭化珪素単結晶の製造方法および製造装置
TW494147B (en) Method of making GaN single crystal and apparatus for making GaN single crystal
JP7083732B2 (ja) 炭化タンタル被覆炭素材料及び半導体単結晶製造装置用部材
JP5240100B2 (ja) 炭化珪素単結晶の製造装置
JP7258273B2 (ja) SiC単結晶の製造方法及び被覆部材
JP7305818B1 (ja) 炭化ケイ素単結晶成長の熱場調整方法
EP2465980B1 (en) Apparatus and method for manufacturing silicon carbide single crystal
JP2010034372A (ja) 気相成長装置用のサセプタ及び気相成長装置
JP4505202B2 (ja) 炭化珪素単結晶の製造方法および製造装置
CN121889541A (zh) 碳化硅单晶的制造方法及碳化硅单晶的制造装置
JP2000319098A (ja) 炭化珪素単結晶の製造方法及び製造装置
JP2006503781A (ja) 単結晶炭化ケイ素の形成
JP5831339B2 (ja) 炭化珪素単結晶の製造方法
JP5392236B2 (ja) 炭化珪素単結晶の製造装置および製造方法
JP6223290B2 (ja) 単結晶の製造装置
JP2937109B2 (ja) 単結晶の製造装置および製造方法
JP4604728B2 (ja) 炭化珪素単結晶の製造方法
JP4459211B2 (ja) 単結晶の成長装置および成長方法
JP7170470B2 (ja) 単結晶成長用坩堝及び単結晶成長方法
JP7490775B2 (ja) SiC結晶の製造方法
WO2019225697A1 (ja) 炭化珪素単結晶製造装置および炭化珪素単結晶の製造方法
JP6300990B1 (ja) 窒化アルミニウム単結晶製造装置
JP2005220017A (ja) 単結晶の製造方法

Legal Events

Date Code Title Description
PB01 Publication