CN121889541A - 碳化硅单晶的制造方法及碳化硅单晶的制造装置 - Google Patents
碳化硅单晶的制造方法及碳化硅单晶的制造装置Info
- Publication number
- CN121889541A CN121889541A CN202480060071.2A CN202480060071A CN121889541A CN 121889541 A CN121889541 A CN 121889541A CN 202480060071 A CN202480060071 A CN 202480060071A CN 121889541 A CN121889541 A CN 121889541A
- Authority
- CN
- China
- Prior art keywords
- silicon carbide
- crucible
- single crystal
- raw material
- seed crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023159117A JP2025050363A (ja) | 2023-09-22 | 2023-09-22 | 炭化珪素単結晶の製造方法および炭化珪素単結晶の製造装置 |
| JP2023-159117 | 2023-09-22 | ||
| PCT/JP2024/031477 WO2025063035A1 (ja) | 2023-09-22 | 2024-09-02 | 炭化珪素単結晶の製造方法および炭化珪素単結晶の製造装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN121889541A true CN121889541A (zh) | 2026-04-17 |
Family
ID=95072793
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202480060071.2A Pending CN121889541A (zh) | 2023-09-22 | 2024-09-02 | 碳化硅单晶的制造方法及碳化硅单晶的制造装置 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2025050363A (https=) |
| CN (1) | CN121889541A (https=) |
| WO (1) | WO2025063035A1 (https=) |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4735622B2 (ja) * | 2007-08-28 | 2011-07-27 | 株式会社デンソー | 炭化珪素単結晶の製造装置 |
| JP4957672B2 (ja) * | 2008-07-11 | 2012-06-20 | 株式会社デンソー | 炭化珪素単結晶の製造装置の製造方法および炭化珪素単結晶の製造方法 |
| JP5240100B2 (ja) * | 2009-06-30 | 2013-07-17 | 株式会社デンソー | 炭化珪素単結晶の製造装置 |
| JP5327126B2 (ja) * | 2010-04-14 | 2013-10-30 | 株式会社デンソー | 炭化珪素単結晶の製造方法および製造装置 |
| JP5613604B2 (ja) * | 2011-03-28 | 2014-10-29 | 昭和電工株式会社 | 炭化珪素単結晶製造装置、炭化珪素単結晶の製造方法及びその成長方法 |
| JP2015020938A (ja) * | 2013-07-22 | 2015-02-02 | 住友電気工業株式会社 | 炭化珪素結晶の製造装置、当該装置の製造方法、および当該装置を用いた炭化珪素結晶の製造方法 |
-
2023
- 2023-09-22 JP JP2023159117A patent/JP2025050363A/ja active Pending
-
2024
- 2024-09-02 CN CN202480060071.2A patent/CN121889541A/zh active Pending
- 2024-09-02 WO PCT/JP2024/031477 patent/WO2025063035A1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JP2025050363A (ja) | 2025-04-04 |
| WO2025063035A1 (ja) | 2025-03-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3961750B2 (ja) | 単結晶の成長装置および成長方法 | |
| JP4748067B2 (ja) | 炭化珪素単結晶の製造方法および製造装置 | |
| JP4962205B2 (ja) | 炭化珪素単結晶の製造方法および製造装置 | |
| TW494147B (en) | Method of making GaN single crystal and apparatus for making GaN single crystal | |
| JP7083732B2 (ja) | 炭化タンタル被覆炭素材料及び半導体単結晶製造装置用部材 | |
| JP5240100B2 (ja) | 炭化珪素単結晶の製造装置 | |
| JP7258273B2 (ja) | SiC単結晶の製造方法及び被覆部材 | |
| JP7305818B1 (ja) | 炭化ケイ素単結晶成長の熱場調整方法 | |
| EP2465980B1 (en) | Apparatus and method for manufacturing silicon carbide single crystal | |
| JP2010034372A (ja) | 気相成長装置用のサセプタ及び気相成長装置 | |
| JP4505202B2 (ja) | 炭化珪素単結晶の製造方法および製造装置 | |
| CN121889541A (zh) | 碳化硅单晶的制造方法及碳化硅单晶的制造装置 | |
| JP2000319098A (ja) | 炭化珪素単結晶の製造方法及び製造装置 | |
| JP2006503781A (ja) | 単結晶炭化ケイ素の形成 | |
| JP5831339B2 (ja) | 炭化珪素単結晶の製造方法 | |
| JP5392236B2 (ja) | 炭化珪素単結晶の製造装置および製造方法 | |
| JP6223290B2 (ja) | 単結晶の製造装置 | |
| JP2937109B2 (ja) | 単結晶の製造装置および製造方法 | |
| JP4604728B2 (ja) | 炭化珪素単結晶の製造方法 | |
| JP4459211B2 (ja) | 単結晶の成長装置および成長方法 | |
| JP7170470B2 (ja) | 単結晶成長用坩堝及び単結晶成長方法 | |
| JP7490775B2 (ja) | SiC結晶の製造方法 | |
| WO2019225697A1 (ja) | 炭化珪素単結晶製造装置および炭化珪素単結晶の製造方法 | |
| JP6300990B1 (ja) | 窒化アルミニウム単結晶製造装置 | |
| JP2005220017A (ja) | 単結晶の製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication |