CN121647062A - 蚀刻方法及等离子体处理装置 - Google Patents

蚀刻方法及等离子体处理装置

Info

Publication number
CN121647062A
CN121647062A CN202480047889.0A CN202480047889A CN121647062A CN 121647062 A CN121647062 A CN 121647062A CN 202480047889 A CN202480047889 A CN 202480047889A CN 121647062 A CN121647062 A CN 121647062A
Authority
CN
China
Prior art keywords
region
substrate
etching method
etching
process gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202480047889.0A
Other languages
English (en)
Chinese (zh)
Inventor
胜沼隆幸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN121647062A publication Critical patent/CN121647062A/zh
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
CN202480047889.0A 2023-08-02 2024-07-19 蚀刻方法及等离子体处理装置 Pending CN121647062A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2023-126149 2023-08-02
JP2023126149 2023-08-02
PCT/JP2024/025936 WO2025028302A1 (ja) 2023-08-02 2024-07-19 エッチング方法及びプラズマ処理装置

Publications (1)

Publication Number Publication Date
CN121647062A true CN121647062A (zh) 2026-03-10

Family

ID=94395219

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202480047889.0A Pending CN121647062A (zh) 2023-08-02 2024-07-19 蚀刻方法及等离子体处理装置

Country Status (5)

Country Link
JP (1) JPWO2025028302A1 (https=)
KR (1) KR20260048572A (https=)
CN (1) CN121647062A (https=)
TW (1) TW202520374A (https=)
WO (1) WO2025028302A1 (https=)

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6884722B2 (en) * 2001-09-27 2005-04-26 International Business Machines Corporation Method of fabricating a narrow polysilicon line
US9721784B2 (en) * 2013-03-15 2017-08-01 Applied Materials, Inc. Ultra-conformal carbon film deposition
JP6230954B2 (ja) * 2014-05-09 2017-11-15 東京エレクトロン株式会社 エッチング方法
US9553102B2 (en) * 2014-08-19 2017-01-24 Applied Materials, Inc. Tungsten separation
KR102452593B1 (ko) * 2015-04-15 2022-10-11 삼성전자주식회사 반도체 장치의 제조 방법
US10483109B2 (en) * 2016-04-12 2019-11-19 Tokyo Electron Limited Self-aligned spacer formation
JP6689159B2 (ja) * 2016-08-22 2020-04-28 東京エレクトロン株式会社 エッチング方法およびｄｒａｍキャパシタの製造方法
US20220165578A1 (en) * 2020-11-25 2022-05-26 Tokyo Electron Limited Substrate processing method and substrate processing apparatus
JP2023055335A (ja) * 2021-10-06 2023-04-18 東京エレクトロン株式会社 エッチング方法及びエッチング装置

Also Published As

Publication number Publication date
JPWO2025028302A1 (https=) 2025-02-06
WO2025028302A1 (ja) 2025-02-06
KR20260048572A (ko) 2026-04-10
TW202520374A (zh) 2025-05-16

Similar Documents

Publication Publication Date Title
TW202303752A (zh) 蝕刻方法及電漿處理裝置
CN118435328A (zh) 蚀刻方法和等离子体处理装置
WO2024043139A1 (ja) エッチング方法及びプラズマ処理装置
CN119234297A (zh) 蚀刻方法和等离子体处理装置
CN117099189A (zh) 蚀刻方法和等离子体处理装置
JP7675033B2 (ja) エッチング方法及びプラズマ処理装置
JP7641923B2 (ja) エッチング方法及びプラズマ処理装置
CN120202532A (zh) 蚀刻方法和等离子体处理装置
CN121647062A (zh) 蚀刻方法及等离子体处理装置
CN117096026A (zh) 蚀刻方法及等离子体处理装置
CN119256389A (zh) 蚀刻方法和等离子体处理装置
CN121549087A (zh) 蚀刻方法及等离子体处理装置
US11810792B2 (en) Etching method and substrate processing apparatus
US20230086580A1 (en) Etching method and plasma processing apparatus
WO2024203479A1 (ja) エッチング方法及びプラズマ処理装置
CN118263113A (zh) 蚀刻方法及等离子体处理装置
JP2024064179A (ja) エッチング方法及びプラズマ処理装置
CN120051856A (zh) 基板处理方法和基板处理装置
TW202314852A (zh) 蝕刻方法及電漿處理裝置
WO2025173580A1 (ja) エッチング方法、及び、プラズマ処理装置
CN118263120A (zh) 蚀刻方法和等离子体处理装置
JP2026002318A (ja) エッチング方法及びプラズマ処理装置
TW202449899A (zh) 蝕刻方法及電漿處理裝置
WO2025173578A1 (ja) エッチング方法、及び、プラズマ処理装置
WO2025177876A1 (ja) 基板処理方法及び基板処理システム

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication