CN120417465B - A piezo-resistor intermediate layer module integrated morphology for protecting thunderbolt - Google Patents
A piezo-resistor intermediate layer module integrated morphology for protecting thunderboltInfo
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- CN120417465B CN120417465B CN202510592406.1A CN202510592406A CN120417465B CN 120417465 B CN120417465 B CN 120417465B CN 202510592406 A CN202510592406 A CN 202510592406A CN 120417465 B CN120417465 B CN 120417465B
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- tvs device
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D80/00—Assemblies of multiple devices comprising at least one device covered by this subclass
- H10D80/20—Assemblies of multiple devices comprising at least one device covered by this subclass the at least one device being covered by groups H10D1/00 - H10D48/00, e.g. assemblies comprising capacitors, power FETs or Schottky diodes
- H10D80/231—Diodes covered by H10D8/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
- H01C7/105—Varistor cores
- H01C7/108—Metal oxide
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D80/00—Assemblies of multiple devices comprising at least one device covered by this subclass
- H10D80/20—Assemblies of multiple devices comprising at least one device covered by this subclass the at least one device being covered by groups H10D1/00 - H10D48/00, e.g. assemblies comprising capacitors, power FETs or Schottky diodes
- H10D80/211—Resistors, capacitors or inductors covered by H10D1/00
- H10D80/213—Resistors
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Thermistors And Varistors (AREA)
Abstract
本发明提供一种防护雷击的压敏电阻夹层模组集成结构，包括：基板、堆叠结构和封装外壳；堆叠结构包括两个TVS器件和夹设在两个TVS器件之间的金属氧化物压敏电阻；两个TVS器件和金属氧化物压敏电阻之间通过导电粘合胶连接在一起，形成三明治式的夹层结构。当雷击或浪涌电压施加时，金属氧化物压敏电阻在高压下导通并承受主要耐压，当TVS器件失效后，模组集成结构不会立刻进入短路状态而由金属氧化物压敏电阻承受电压；有效解决了传统TVS短路失效问题，同时提高了面积性能效率与耐压能力；并可以降低封装成本。
This invention provides a varistor sandwich module integrated structure for lightning protection, comprising: a substrate, a stacked structure, and a package housing; the stacked structure includes two TVS devices and a metal oxide varistor sandwiched between the two TVS devices; the two TVS devices and the metal oxide varistor are connected together by conductive adhesive to form a sandwich-like structure. When lightning or surge voltage is applied, the metal oxide varistor conducts under high voltage and withstands the main withstand voltage. When the TVS devices fail, the module integrated structure does not immediately enter a short-circuit state, but the metal oxide varistor withstands the voltage; this effectively solves the short-circuit failure problem of traditional TVS devices, while improving area performance efficiency and withstand voltage capability; and can reduce packaging costs.
Description
Technical Field
The invention belongs to the technical field of microelectronic packaging and circuit protection, and particularly relates to a piezoresistor interlayer module integrated structure for protecting lightning stroke.
Background
An electrical surge/transient voltage, which refers to a random and over-normal high voltage or high current that suddenly occurs in the circuit, is characterized by a short time of occurrence and a very high instantaneous energy. The electric surge has strong destructiveness to the electronic element and the integrated circuit, the light logic circuit is induced to generate misoperation, and the heavy logic circuit is induced to generate serious thermal effects such as secondary breakdown of the triode, latch-up effect of the complementary metal oxide semiconductor (Complementary Metal Oxide Semiconductor, CMOS) and the like, so that the device or the integrated circuit is disabled. Electrical surges typically have two sources of randomness, the first being an unstable factor of the power grid, such as abrupt switching, abrupt start-up of capacitive or inductive loads, hot plugging of associated equipment, unstable operation of associated electrical power sources, etc. The second is external sudden interference such as lightning, electrostatic discharge, etc.
The lightning protection technology refers to a protection technology for preventing damage to equipment or internal key components thereof caused by direct lightning or electromagnetic pulse of lightning by an integrated system mode of interception, bypass and discharge into the ground. Surge protection devices (Surge Protection Device, SPDs) are widely used in electronic devices to prevent damage to circuitry from transient overvoltages (e.g., lightning strikes, electrostatic discharges, etc.). Conventional surge protection devices typically employ a single type of protection element, such as TVS (transient voltage suppression diode), znO varistor, etc. The TVS device has the advantages of high response speed, limited voltage resistance, direct short circuit after failure, strong current capacity of ZnO piezoresistor, high voltage resistance and no semiconductor technology. In order to solve the problems of voltage resistance, current capacity and failure short circuit, the prior art often adopts a combination of components, however, the integration level is low, the circuit area is large, and the reliability is poor.
Disclosure of Invention
In order to solve at least one technical problem in the prior art, the embodiment of the invention provides a piezoresistor interlayer module integrated structure for protecting lightning stroke, which is formed by adding a layer of metal oxide piezoresistor between two TVS devices, so that the problems of low integration level, high packaging cost, low area performance efficiency, limited voltage-resistant capability and the like of the traditional stacked package are effectively solved, and meanwhile, the reliability and the stability of the devices are improved. In order to achieve the technical purpose, the technical scheme adopted by the embodiment of the invention is as follows:
The embodiment of the invention provides a piezoresistor interlayer module integrated structure for protecting lightning, which comprises the following components:
The substrate is provided with a substrate anode and a substrate cathode;
A stacked structure disposed on the substrate; the stacked structure comprises a first layer of bonding glue, a first TVS device cathode, a first TVS device anode, a second layer of conductive bonding glue, a metal oxide varistor, a third layer of conductive bonding glue, a second TVS device cathode, a second TVS device and a second TVS device anode, wherein the first layer of bonding glue is coated above a substrate, the first TVS device cathode, the first TVS device and the first TVS device anode are sequentially arranged right above the first layer of bonding glue from bottom to top, the second layer of conductive bonding glue is coated right above the first TVS device anode, the second layer of conductive bonding glue is used for fixing the metal oxide varistor right above the first TVS device anode, the first TVS device anode and the metal oxide varistor form electrical connection through the second layer of conductive bonding glue, the third layer of conductive bonding glue is coated right above the metal oxide varistor, the second TVS device cathode, the second TVS device anode and the second TVS device anode are sequentially arranged right above the third layer of conductive bonding glue, and the second TVS device anode are electrically connected through the second TVS device cathode and the second TVS device;
An anode wire, wherein the anode of the second TVS device is electrically connected with the anode of the substrate through the anode wire;
a cathode lead, through which the cathode of the first TVS device is electrically connected with the cathode of the substrate;
And the packaging shell is arranged above the substrate and packages the stacked structure, the anode lead and the cathode lead in the packaging shell.
Further, the metal oxide varistor is a ZnO varistor, a SnO2 varistor or a TiO2 varistor.
Further, the anode and cathode leads are located at both sides of the stacked structure.
Further, the second layer of conductive adhesive glue and the third layer of conductive adhesive glue are silver glue or copper glue.
Further, the first TVS device and the second TVS device are transient voltage suppression diodes having a response time of less than 1 nanosecond.
The technical scheme provided by the embodiment of the invention has the beneficial effects that:
1) When lightning stroke or surge voltage is applied, the metal oxide piezoresistor is conducted under high voltage and bears main withstand voltage, and when the TVS device fails, the module integrated structure does not immediately enter a short circuit state and the metal oxide piezoresistor bears voltage, so that the problem of the traditional TVS short circuit failure is effectively solved.
2) The performance is reliable, namely, a sandwich type sandwich structure is formed by adding a layer of metal oxide piezoresistor between two TVS devices, the performance is more reliable in various performances such as pressure resistance and the like, which are superior to the traditional stacked packaging structure with the same area and volume.
3) The integration level is high, namely, two devices are integrated in one package body, the integration level is remarkably improved, and external connection and wiring are reduced.
4) The area performance efficiency is high, the high area performance efficiency is realized by optimizing the packaging structure, and the method is suitable for application scenes with limited space.
5) The packaging cost is low, a mature packaging process can be adopted, the packaging cost is reduced, and the method is suitable for large-scale production.
Drawings
Fig. 1 is a schematic structural diagram of a module integrated structure according to a first embodiment of the invention.
Fig. 2 is an equivalent circuit diagram in the first embodiment of the invention.
Detailed Description
The present invention will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present invention more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
In the description of the embodiments of the present invention, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," "outer," and the like indicate an orientation or a positional relationship based on that shown in the drawings, and are merely for convenience of description and to simplify the description, and do not indicate or imply that the apparatus or elements to be referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the embodiments of the present invention, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, integrally connected, mechanically connected, electrically connected, directly connected, indirectly connected through an intermediate medium, and in communication between two elements, or wirelessly connected, or wired. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.
In addition, the technical features of the different embodiments of the present invention described below may be combined with each other as long as they do not collide with each other.
Embodiment one, as shown in fig. 1 and 2;
An embodiment provides a varistor interlayer module integrated structure (hereinafter referred to as module integrated structure) for protecting lightning, comprising:
a substrate 100, wherein a substrate anode 101 and a substrate cathode 102 are arranged on the substrate 100;
The stacked structure a is arranged on the substrate 100, and comprises a first layer of bonding glue 103, a first TVS device cathode 104, a first TVS device 105, a first TVS device anode 106, a second layer of conductive bonding glue 107, a metal oxide varistor 108, a third layer of conductive bonding glue 109, a second TVS device cathode 110, a second TVS device 111 and a second TVS device anode 112, wherein the first layer of bonding glue 103 is coated above the substrate 100, the first TVS device cathode 104, the first TVS device 105 and the first TVS device anode 106 are sequentially coated above the first TVS device cathode 106 from bottom to top, the second layer of conductive bonding glue 107 is coated above the first TVS device anode 106, the metal oxide varistor 108 is fixed above the second TVS device anode 107, an electrical connection is formed between the first TVS device anode 106 and the metal oxide varistor 108 through the second layer of conductive bonding glue 107, the third layer of conductive bonding glue 109 is coated above the metal oxide varistor 108, the second TVS device anode 109 is electrically bonded above the second TVS device cathode 109, and the second TVS device anode 110 is electrically connected with the second TVS device anode 110 from bottom to top in sequence;
an anode wire 113, the second TVS device anode 112 being electrically connected to the substrate anode 101 through the anode wire 113;
a cathode lead 114, the first TVS device cathode 104 electrically connected to the substrate cathode 102 through the cathode lead 114;
and a package case 115 disposed above the substrate 100, and encapsulating the stack structure a, the anode wire 113, and the cathode wire 114 inside the package case 115.
The module integrated structure provided by the application has the core that the metal oxide piezoresistor is adopted as an interlayer in the stacked packaging structure, so that the packaging area and cost are effectively reduced, and the performance, reliability and stability of the device are improved.
When lightning stroke or surge voltage is applied to two ends of the module integrated structure, the TVS device/metal oxide varistor/TVS device combination is extremely high in withstand voltage due to the characteristics of the metal oxide varistor, and is very suitable for the high-voltage high-power lightning protection field with the voltage of more than 200V. When the whole module integrated structure is conducted, the voltage drop is clamped to a safe value. If the surge energy exceeds the individual bearing capacity of the TVS device, the conventional structure will directly cause short-circuit burnout or trigger trip protection. The module integrated structure of the application has stronger overcurrent capability than TVS, even if the TVS device breaks down and burns, the metal oxide varistor interlayer can still ensure certain withstand voltage, and the circuit cannot be burnt by direct short circuit, thereby improving the capability of the whole device for resisting the burning short circuit.
In order to increase the current capacity, the conventional stacked package structure needs to increase the area of TVS devices so as to increase the package area, and the module integrated structure provided by the application has the advantages that a layer of metal oxide piezoresistor is added between two TVS devices to form a sandwich type package module, the main withstand voltage is born by the piezoresistor material, the package area and the cost are effectively reduced, and meanwhile, the reliability of the devices is improved.
In addition, the metal oxide varistor can replace the middle multi-layer stacking part of the traditional stacking packaging structure because of the excellent nonlinear characteristic. The metal oxide piezoresistor is introduced as an interlayer, so that the number of stacked layers can be reduced, and the packaging cost is reduced. Meanwhile, the metal oxide piezoresistor has excellent nonlinear characteristics and voltage withstanding characteristics, and can improve the voltage withstanding capability and other performances of the device.
Specifically, the metal oxide varistor 108 is a ZnO varistor.
More preferably, the anode lead 113 and the cathode lead 114 are positioned at both sides of the stacked structure a, and a short circuit condition of both can be prevented.
Specifically, the second layer of conductive adhesive 107 and the third layer of conductive adhesive 109 are silver or copper adhesive, and have excellent conductive performance and adhesive performance. The first layer of adhesive glue 103 may be silver glue or copper glue, or may be other insulating adhesive glue.
Specifically, the first TVS device 105 and the second TVS device 111 are transient voltage suppression diodes, and the response time is less than 1 nanosecond, which has the advantage of fast response speed.
Embodiment two;
In the second embodiment, the metal oxide varistor 108 is a SnO2 varistor, and the rest is the same as in the first embodiment.
Embodiment III:
In the third embodiment, the metal oxide varistor 108 is a TiO2 varistor, and the rest is the same as in the first embodiment.
Finally, it should be noted that the above-mentioned embodiments are only for illustrating the technical solution of the present invention, and not for limiting the same, and although the present invention has been described in detail with reference to the examples, it should be understood by those skilled in the art that modifications and equivalents may be made to the technical solution of the present invention without departing from the spirit and scope of the technical solution of the present invention, and all such modifications and equivalents are intended to be encompassed in the scope of the claims of the present invention.
Claims (5)
1. A varistor intermediate layer module integrated configuration for protecting against lightning strikes, characterized in that it includes:
a substrate (100), wherein a substrate anode (101) and a substrate cathode (102) are arranged on the substrate (100);
The stacked structure (a) is arranged on the substrate (100), the stacked structure (a) comprises a first layer of adhesive glue (103), a first TVS device cathode (104), a first TVS device (105), a first TVS device anode (106), a second layer of conductive adhesive glue (107), a metal oxide varistor (108), a third layer of conductive adhesive glue (109), a second TVS device cathode (110), a second TVS device (111) and a second TVS device anode (112), the first layer of adhesive glue (103) is coated on the substrate (100), the first TVS device cathode (104), the first TVS device (105) and the first TVS device anode (106) are sequentially coated on the first TVS device cathode (106) from bottom to top, the second layer of conductive adhesive glue (107) is used for fixing the metal oxide varistor (108) on the first TVS device anode (106), the second layer of conductive adhesive glue (107) is used for bonding the metal oxide varistor (108) on the second TVS device anode (108), the second TVS device anode (108) is electrically connected with the second TVS device anode (108) from bottom to the first TVS device anode (108) through the second layer of conductive adhesive glue (107) and the second TVS device anode (109) is sequentially coated on the first TVS device cathode (106) from bottom to top, the second TVS device anode (112) is electrically connected with the metal oxide piezoresistor (108) through the third layer of conductive adhesive glue (109);
An anode wire (113), wherein the second TVS device anode (112) is electrically connected with the substrate anode (101) through the anode wire (113);
a cathode lead (114), the first TVS device cathode (104) being electrically connected to the substrate cathode (102) through the cathode lead (114);
And a packaging case (115) provided above the substrate (100) and packaging the stacked structure (a), the anode wire (113), and the cathode wire (114) inside the packaging case (115).
2. The varistor sandwich module integrated structure for protecting against lightning as defined in claim 1,
The metal oxide varistor (108) is a ZnO varistor, a SnO2 varistor or a TiO2 varistor.
3. The varistor sandwich module integrated structure for protecting against lightning as defined in claim 1,
The anode lead (113) and the cathode lead (114) are positioned on both sides of the stacked structure.
4. The varistor sandwich module integrated structure for protecting against lightning as defined in claim 1,
The second layer of conductive adhesive glue (107) and the third layer of conductive adhesive glue (109) are silver glue or copper glue.
5. The varistor sandwich module integrated structure for protecting against lightning as defined in claim 1,
The first TVS device (105) and the second TVS device (111) are transient voltage suppression diodes having a response time of less than 1 nanosecond.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202510592406.1A CN120417465B (en) | 2025-05-09 | 2025-05-09 | A piezo-resistor intermediate layer module integrated morphology for protecting thunderbolt |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202510592406.1A CN120417465B (en) | 2025-05-09 | 2025-05-09 | A piezo-resistor intermediate layer module integrated morphology for protecting thunderbolt |
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| CN120417465A CN120417465A (en) | 2025-08-01 |
| CN120417465B true CN120417465B (en) | 2026-02-17 |
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| CN202510592406.1A Active CN120417465B (en) | 2025-05-09 | 2025-05-09 | A piezo-resistor intermediate layer module integrated morphology for protecting thunderbolt |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203014373U (en) * | 2012-12-31 | 2013-06-19 | 北京先研科技有限责任公司 | Transient surge protector used specially for elevator |
| CN211908364U (en) * | 2020-03-28 | 2020-11-10 | 青岛鼎信通讯股份有限公司 | Multistage lightning surge protection circuit for direct-current power supply of product in power industry |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006179842A (en) * | 2004-12-22 | 2006-07-06 | Daito Communication Apparatus Co Ltd | Thunder protection equipment capable of separating body on breaking down metal oxide varistor |
| CN109066640B (en) * | 2018-07-12 | 2021-01-26 | 成都铁达电子股份有限公司 | Novel lightning protection overvoltage protection device |
| CN222547186U (en) * | 2024-04-19 | 2025-02-28 | 宁波龙源电源科技有限公司 | A lightning protection and insulation withstand voltage protection circuit |
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2025
- 2025-05-09 CN CN202510592406.1A patent/CN120417465B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203014373U (en) * | 2012-12-31 | 2013-06-19 | 北京先研科技有限责任公司 | Transient surge protector used specially for elevator |
| CN211908364U (en) * | 2020-03-28 | 2020-11-10 | 青岛鼎信通讯股份有限公司 | Multistage lightning surge protection circuit for direct-current power supply of product in power industry |
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| CN120417465A (en) | 2025-08-01 |
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