CN1204147A - 具有沟槽隔离结构的半导体器件及其制造方法 - Google Patents
具有沟槽隔离结构的半导体器件及其制造方法 Download PDFInfo
- Publication number
- CN1204147A CN1204147A CN98114783A CN98114783A CN1204147A CN 1204147 A CN1204147 A CN 1204147A CN 98114783 A CN98114783 A CN 98114783A CN 98114783 A CN98114783 A CN 98114783A CN 1204147 A CN1204147 A CN 1204147A
- Authority
- CN
- China
- Prior art keywords
- dielectric layer
- layer
- isolated groove
- remaining
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 73
- 238000002955 isolation Methods 0.000 title claims abstract description 43
- 238000000034 method Methods 0.000 title claims description 62
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 239000010410 layer Substances 0.000 claims abstract description 358
- 239000000758 substrate Substances 0.000 claims abstract description 80
- 239000011229 interlayer Substances 0.000 claims abstract description 61
- 238000005530 etching Methods 0.000 claims abstract description 19
- 125000006850 spacer group Chemical group 0.000 claims description 66
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 58
- 238000005260 corrosion Methods 0.000 claims description 55
- 230000007797 corrosion Effects 0.000 claims description 49
- 238000005516 engineering process Methods 0.000 claims description 41
- 239000000377 silicon dioxide Substances 0.000 claims description 29
- 238000010276 construction Methods 0.000 claims description 28
- 239000012212 insulator Substances 0.000 claims description 24
- 235000012239 silicon dioxide Nutrition 0.000 claims description 21
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- 230000003647 oxidation Effects 0.000 claims description 7
- 238000007254 oxidation reaction Methods 0.000 claims description 7
- 229920002120 photoresistant polymer Polymers 0.000 claims description 7
- 238000005498 polishing Methods 0.000 claims description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 3
- 239000003989 dielectric material Substances 0.000 abstract 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 56
- 238000009792 diffusion process Methods 0.000 description 17
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 14
- 229920005591 polysilicon Polymers 0.000 description 14
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 12
- 238000005229 chemical vapour deposition Methods 0.000 description 9
- 239000013078 crystal Substances 0.000 description 8
- 230000007547 defect Effects 0.000 description 8
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 3
- 239000003518 caustics Substances 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
Abstract
Description
Claims (13)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP158791/97 | 1997-06-16 | ||
JP9158791A JPH118295A (ja) | 1997-06-16 | 1997-06-16 | 半導体装置及びその製造方法 |
JP158791/1997 | 1997-06-16 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1204147A true CN1204147A (zh) | 1999-01-06 |
CN1155072C CN1155072C (zh) | 2004-06-23 |
Family
ID=15679429
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB981147836A Expired - Lifetime CN1155072C (zh) | 1997-06-16 | 1998-06-16 | 具有沟槽隔离结构的半导体器件及其制造方法 |
Country Status (5)
Country | Link |
---|---|
US (2) | US5929504A (zh) |
JP (1) | JPH118295A (zh) |
KR (1) | KR19990007026A (zh) |
CN (1) | CN1155072C (zh) |
GB (1) | GB2326526B (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101320732B (zh) * | 2007-06-05 | 2010-09-15 | 台湾积体电路制造股份有限公司 | 半导体装置以及用以制造半导体装置的衬底 |
CN1681103B (zh) * | 2004-03-05 | 2010-10-13 | 三星电子株式会社 | 形成有掩埋氧化物图形的半导体器件的方法及其相关器件 |
CN103928386A (zh) * | 2013-01-15 | 2014-07-16 | 中芯国际集成电路制造(上海)有限公司 | 一种浅沟槽隔离结构的制造方法 |
WO2019085919A1 (zh) * | 2017-10-31 | 2019-05-09 | 无锡华润上华科技有限公司 | 浅沟槽隔离结构的凹陷区处理方法及半导体元器件 |
WO2022068301A1 (zh) * | 2020-09-29 | 2022-04-07 | 长鑫存储技术有限公司 | 一种半导体结构及其制造方法 |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3063686B2 (ja) | 1997-06-13 | 2000-07-12 | 日本電気株式会社 | 半導体装置の製造方法 |
GB2344465B (en) * | 1997-06-13 | 2000-11-29 | Nec Corp | Method for producing a semiconductor device |
US20020005560A1 (en) * | 1998-02-05 | 2002-01-17 | Chung Yuan Lee | Shallow trench isolation having an etching stop layer and method for fabricating same |
JP2000012678A (ja) * | 1998-06-22 | 2000-01-14 | Mitsubishi Electric Corp | 半導体装置の構造及び製造方法 |
US6303043B1 (en) * | 1999-07-07 | 2001-10-16 | United Microelectronics Corp. | Method of fabricating preserve layer |
KR100344766B1 (ko) * | 1999-10-26 | 2002-07-19 | 주식회사 하이닉스반도체 | 반도체장치의 소자격리방법 |
US6329253B1 (en) * | 1999-11-05 | 2001-12-11 | Chartered Semiconductor Manufacturing Ltd. | Thick oxide MOS device used in ESD protection circuit |
US20030143849A1 (en) * | 2001-01-16 | 2003-07-31 | Promos Technologies Inc. | Method for avoiding defects produced in the CMP process |
US6632742B2 (en) * | 2001-04-18 | 2003-10-14 | Promos Technologies Inc. | Method for avoiding defects produced in the CMP process |
US6504225B1 (en) * | 2001-04-18 | 2003-01-07 | Advanced Micro Devices, Inc. | Teos seaming scribe line monitor |
US6994903B2 (en) * | 2002-01-03 | 2006-02-07 | International Business Machines Corp. | Hybrid substrate and method for fabricating the same |
KR100446312B1 (ko) * | 2002-06-29 | 2004-09-01 | 주식회사 하이닉스반도체 | 접합 누설 억제를 위한 반도체 소자 제조방법 |
JP4021283B2 (ja) * | 2002-08-28 | 2007-12-12 | 富士通株式会社 | 半導体装置 |
US7074042B2 (en) * | 2003-05-27 | 2006-07-11 | Ultradent Products, Inc. | Tray-like dental bleaching devices having a barrier layer and a substantially solid bleaching composition |
JP4592340B2 (ja) * | 2004-06-29 | 2010-12-01 | 三洋電機株式会社 | 半導体装置の製造方法 |
US7723178B2 (en) * | 2008-07-18 | 2010-05-25 | International Business Machines Corporation | Shallow and deep trench isolation structures in semiconductor integrated circuits |
DE102011005719A1 (de) * | 2011-03-17 | 2012-09-20 | Globalfoundries Dresden Module One Llc & Co. Kg | Erhöhte Integrität von Metallgatestapeln mit großem ε durch Reduzieren von STI-Absenkungen durch Abscheiden eines Füllmaterials nach der STI-Herstellung |
US10036210B2 (en) | 2015-05-01 | 2018-07-31 | Zilift Holdings, Ltd. | Method and system for deploying an electrical submersible pump in a wellbore |
Family Cites Families (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0055521B1 (en) * | 1980-11-29 | 1985-05-22 | Kabushiki Kaisha Toshiba | Method of filling a groove in a semiconductor substrate |
DE3265339D1 (en) * | 1981-03-20 | 1985-09-19 | Toshiba Kk | Method for manufacturing semiconductor device |
US4454647A (en) * | 1981-08-27 | 1984-06-19 | International Business Machines Corporation | Isolation for high density integrated circuits |
JPS5961045A (ja) | 1982-09-29 | 1984-04-07 | Fujitsu Ltd | 半導体装置の製造方法 |
JPH01186645A (ja) * | 1988-01-14 | 1989-07-26 | Nec Corp | 半導体素子分離構造及びその製造方法 |
US4863562A (en) * | 1988-02-11 | 1989-09-05 | Sgs-Thomson Microelectronics, Inc. | Method for forming a non-planar structure on the surface of a semiconductor substrate |
US4836885A (en) * | 1988-05-03 | 1989-06-06 | International Business Machines Corporation | Planarization process for wide trench isolation |
US5189501A (en) * | 1988-10-05 | 1993-02-23 | Sharp Kabushiki Kaisha | Isolator for electrically isolating semiconductor devices in an integrated circuit |
JPH03173174A (ja) * | 1989-11-30 | 1991-07-26 | Toshiba Corp | 半導体記憶装置 |
JPH0427141A (ja) * | 1989-12-20 | 1992-01-30 | Nec Corp | 半導体装置およびその製造方法 |
JP3134406B2 (ja) * | 1990-10-22 | 2001-02-13 | 日本電気株式会社 | 半導体装置 |
JPH0555366A (ja) | 1991-08-27 | 1993-03-05 | Hitachi Ltd | 半導体装置及びその製造方法 |
US5315142A (en) * | 1992-03-23 | 1994-05-24 | International Business Machines Corporation | High performance trench EEPROM cell |
JP3203048B2 (ja) * | 1992-04-21 | 2001-08-27 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
US5358891A (en) * | 1993-06-29 | 1994-10-25 | Intel Corporation | Trench isolation with planar topography and method of fabrication |
US5543343A (en) * | 1993-12-22 | 1996-08-06 | Sgs-Thomson Microelectronics, Inc. | Method fabricating an integrated circuit |
CA2167455A1 (en) * | 1995-01-19 | 1996-07-20 | Kevin Cooper | Absorbable polyalkylene diglycolates |
US5786263A (en) | 1995-04-04 | 1998-07-28 | Motorola, Inc. | Method for forming a trench isolation structure in an integrated circuit |
JPH08330410A (ja) | 1995-05-31 | 1996-12-13 | Sony Corp | 素子分離方法、素子分離構造、及び半導体装置 |
JP3613858B2 (ja) * | 1995-10-26 | 2005-01-26 | ソニー株式会社 | テレビジョン信号の伝送または記録方法、および記録装置 |
JPH09134954A (ja) | 1995-11-08 | 1997-05-20 | Toshiba Microelectron Corp | 半導体装置およびその製造方法 |
US5933748A (en) * | 1996-01-22 | 1999-08-03 | United Microelectronics Corp. | Shallow trench isolation process |
US5661072A (en) * | 1996-05-23 | 1997-08-26 | Micron Technology, Inc. | Method for reducing oxide thinning during the formation of a semiconductor device |
KR100242466B1 (ko) * | 1996-06-27 | 2000-02-01 | 김영환 | 채널스탑이온주입에 따른 좁은폭효과 방지를 위한 소자분리 구조를 갖는 반도체장치 및 그 제조방법 |
US5770484A (en) * | 1996-12-13 | 1998-06-23 | International Business Machines Corporation | Method of making silicon on insulator buried plate trench capacitor |
US6097076A (en) * | 1997-03-25 | 2000-08-01 | Micron Technology, Inc. | Self-aligned isolation trench |
US6005279A (en) * | 1997-12-18 | 1999-12-21 | Advanced Micro Devices, Inc. | Trench edge spacer formation |
US6960818B1 (en) * | 1997-12-30 | 2005-11-01 | Siemens Aktiengesellschaft | Recessed shallow trench isolation structure nitride liner and method for making same |
TW373297B (en) * | 1998-07-14 | 1999-11-01 | United Microelectronics Corp | Shallow trench isolation zone producing method |
-
1997
- 1997-06-16 JP JP9158791A patent/JPH118295A/ja active Pending
-
1998
- 1998-06-16 US US09/097,664 patent/US5929504A/en not_active Expired - Lifetime
- 1998-06-16 KR KR1019980022530A patent/KR19990007026A/ko not_active Application Discontinuation
- 1998-06-16 GB GB9813008A patent/GB2326526B/en not_active Expired - Fee Related
- 1998-06-16 CN CNB981147836A patent/CN1155072C/zh not_active Expired - Lifetime
-
1999
- 1999-04-28 US US09/300,441 patent/US6197661B1/en not_active Expired - Fee Related
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1681103B (zh) * | 2004-03-05 | 2010-10-13 | 三星电子株式会社 | 形成有掩埋氧化物图形的半导体器件的方法及其相关器件 |
CN101320732B (zh) * | 2007-06-05 | 2010-09-15 | 台湾积体电路制造股份有限公司 | 半导体装置以及用以制造半导体装置的衬底 |
CN103928386A (zh) * | 2013-01-15 | 2014-07-16 | 中芯国际集成电路制造(上海)有限公司 | 一种浅沟槽隔离结构的制造方法 |
CN103928386B (zh) * | 2013-01-15 | 2017-03-15 | 中芯国际集成电路制造(上海)有限公司 | 一种浅沟槽隔离结构的制造方法 |
WO2019085919A1 (zh) * | 2017-10-31 | 2019-05-09 | 无锡华润上华科技有限公司 | 浅沟槽隔离结构的凹陷区处理方法及半导体元器件 |
WO2022068301A1 (zh) * | 2020-09-29 | 2022-04-07 | 长鑫存储技术有限公司 | 一种半导体结构及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
US6197661B1 (en) | 2001-03-06 |
GB9813008D0 (en) | 1998-08-12 |
JPH118295A (ja) | 1999-01-12 |
KR19990007026A (ko) | 1999-01-25 |
US5929504A (en) | 1999-07-27 |
GB2326526B (en) | 2001-12-19 |
CN1155072C (zh) | 2004-06-23 |
GB2326526A (en) | 1998-12-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1155072C (zh) | 具有沟槽隔离结构的半导体器件及其制造方法 | |
CN1205664C (zh) | 半导体装置及其制造方法 | |
CN1231970C (zh) | 半导体器件 | |
CN1052343C (zh) | 半导体器件及其制造方法 | |
CN1181552C (zh) | 半导体装置及其制造方法 | |
CN1290186C (zh) | 半导体器件及其制造方法 | |
CN100347832C (zh) | 电子器件材料的制造方法 | |
CN1956173A (zh) | 半导体器件以及其制造方法 | |
CN1725511A (zh) | 半导体器件及其制造方法 | |
CN1135618C (zh) | 半导体装置及其制造方法 | |
CN1174409A (zh) | 半导体器件及其制造方法 | |
CN1893070A (zh) | 有利于提高抗水性和抗氧化性的半导体器件 | |
CN1303698C (zh) | 半导体器件及其制造方法 | |
CN1835226A (zh) | 半导体器件及其制造方法 | |
CN1893114A (zh) | 具有铁电膜作为栅极绝缘膜的半导体器件及其制造方法 | |
CN1862826A (zh) | 电介质隔离型半导体装置及其制造方法 | |
CN1701418A (zh) | 半导体器件的制造方法、半导体晶片及半导体器件 | |
CN1956223A (zh) | 半导体装置及其制造方法 | |
CN1314706A (zh) | 形成元件隔离区的方法 | |
CN1227745C (zh) | 垂直金属-氧化物-半导体晶体管及其制造方法 | |
CN1426106A (zh) | 半导体装置 | |
CN1945835A (zh) | 半导体装置及其制造方法 | |
CN1909243A (zh) | 半导体装置及其制造方法 | |
CN101030557A (zh) | 半导体器件及其制造方法 | |
CN1421914A (zh) | 半导体装置及其制造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C06 | Publication | ||
PB01 | Publication | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
REG | Reference to a national code |
Ref country code: HK Ref legal event code: GR Ref document number: 1036286 Country of ref document: HK |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: TOKYO, JAPAN TO: KANAGAWA, JAPAN |
|
TR01 | Transfer of patent right |
Effective date of registration: 20100804 Address after: Kanagawa, Japan Patentee after: NEC Corp. Address before: Tokyo, Japan Patentee before: NEC Corp. |
|
C56 | Change in the name or address of the patentee |
Owner name: RENESAS ELECTRONICS CORP. Free format text: FORMER NAME: |
|
CP01 | Change in the name or title of a patent holder |
Address after: Kanagawa, Japan Patentee after: Renesas Electronics Corporation Address before: Kanagawa, Japan Patentee before: NEC Corp. |
|
CP02 | Change in the address of a patent holder | ||
CP02 | Change in the address of a patent holder |
Address after: Tokyo, Japan Patentee after: Renesas Electronics Corporation Address before: Kanagawa, Japan Patentee before: Renesas Electronics Corporation |
|
CX01 | Expiry of patent term | ||
CX01 | Expiry of patent term |
Granted publication date: 20040623 |