CN1201161C - 用于探测具有突起的接触元件的晶片的探测卡 - Google Patents
用于探测具有突起的接触元件的晶片的探测卡 Download PDFInfo
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- CN1201161C CN1201161C CNB998137901A CN99813790A CN1201161C CN 1201161 C CN1201161 C CN 1201161C CN B998137901 A CNB998137901 A CN B998137901A CN 99813790 A CN99813790 A CN 99813790A CN 1201161 C CN1201161 C CN 1201161C
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Abstract
提供了一种用于接触一具有突起的接触元件的电子元件的探测卡。具体说,本发明可用于接触一具有弹性接触元件、如弹簧的半导体晶片。将一探测卡设计成具有与晶片上的接触元件相配合的端子。在一较佳实施例中,端子是柱销。在一较佳实施例中,端子包括一适合于反复接触的接触材料。在一尤为优选的实施例中,将一间隔变换器制成在其一侧具有接触柱销,并在其相对侧具有端子。一具有弹簧接触件的插入器将该间隔变换器的相对侧上的一接触件连接于一探测卡上相应的端子,该端子进而连接于一可以与一诸如传统测试器之类的测试装置相连的端子。
Description
发明领域
本发明涉及一种用于接触具有突起的接触结构的电子元件的装置。本发明尤其适合于探测具有弹性接触结构的晶片。
发明背景
在制造半导体器件的技术中已众所周知,对某些器件要在其尚未从晶片上分离之前先就其某些功能度进行测试。传统上,这是用一探测卡和一探头来实现。图1中示出了一代表性的探测卡。该探测卡安装于一探头中,该探头进而高精度地检测探测卡的位置和取向以及待测试的晶片的位置和取向,然后使这两者精确地对齐。探测卡进而连接于一测试器,从而在测试器与晶片上的一或多个器件之间提供连接。测试器可给测试中的器件(DUT)通电,并评价该器件的性能。该过程可根据需要重复,用以基本上测试晶片上的每个器件。通过测试标准的器件才供进一步加工。
一种特别有用的探测卡是利用弹性元件来接触晶片。这种探测卡示于图1中。该探测卡详细描述于名为“将探测卡组件的探头尖端整平的方法”的经普通转让的美国专利No.5,974,662中,其相应的PCT申请以WO 96/15458于1996年5月23日公开。
半导体器件系在半导体晶片上制造,但必须经分离并连接于外部装置以实现功能。多年来,连接半导体的标准方法是以通常为铝材料的衬垫来制造半导体器件。这些衬垫通常用丝焊连接于较大的结构,该结构通常是引线框架。引线框架可以安装在一合适的外壳中,该外壳通常由陶瓷或塑料制成。外壳上的连接部的间隔设计成与一电路板或其它诸如插座之类的匹配装置相配合。这些年来,在外壳方面的创新使外壳中的间隔相对较小,并且引线脚的数量更高。
在BGA外壳中,可以看到显著不同于这种外壳范例的变化。在此,接触点是可软熔材料的球粒。一般是使用焊料,使外壳可定位在一接触区域,然后经加热而使焊料软熔,从而提供可靠的电气连接。这一相同的原理可用在芯片级场合,以在接触区域上形成小突起。常用的工艺是制成C4球(可控塌陷芯片连接法)。
传统的探测卡是设计成接触传统的接合衬垫,该接合衬垫通常是铝。图1的新型探测卡可用于这一用途。鉴于许多原因,探测C4球是较为复杂的,但图1的探测卡也可很好地适用于此用途。
现在已经有新型的外壳,它允许直接在半导体晶片上形成小的弹性接触结构。这是几个专利的主题,包括于1998年11月3日颁发的美国专利5,829,128。这里在图2中示出了一示例性的实施例,即晶片208,它具有连接于端子226的弹簧224。
已经披露有一种大型接触器,用于接触一构制有弹性接触元件的半导体晶片的局部或全部。在1997年1月15日提交的、经普通转让的待批美国专利申请No.08/784,862中描述了固定和老化工艺,该申请整个援引在此供参考。相应的PCT申请以WO 97/43656在1997年11月20日公开。
发明概要
本发明提供了一种用于探测具有突起的接触元件的半导体晶片的探测卡。具体说,本发明可用于接触弹性接触元件,诸如弹簧。
将一探测卡设计成具有与晶片上的接触元件相配合的端子。在一较佳实施例中,端子是柱销。在一较佳实施例中,端子包括一适合于反复接触的接触材料。
在一尤为优选的实施例中,将一间隔变换器制成在其一侧具有接触柱销,并在其相对侧具有端子。一具有弹簧接触件的插入器将该间隔变换器的相对侧上的一接触件连接于一探测卡上相应的端子,该端子进而连接于一可以与一诸如传统测试器之类的测试装置相连的端子。
本发明的一个目的在于提供一种用于探测具有突起的接触元件的半导体器件的探测卡。
本发明的另一个目的在于对一具有突起的接触元件的电子元件进行探测。该电子元件可包括一带外壳的半导体,诸如一BGA外壳。
因此,本发明提供一种测试组件,包括:一电子器件,它包括从电子器件的一表面延伸出来的细长的弹性接触元件;一探测卡;一探头基底,它具有多个端子,每个端子被压靠于并压迫细长的弹性接触元件中的一个;一插入器基底,它设置在探测卡与探头基底之间并与它们隔开;多个细长的互连件,它们通过插入器基底在探测卡与探头基底之间提供柔顺的电气连接;以及一改变探头基底相对于探测卡的取向的机构。
在本发明的测试组件中,端子可以是柱销,它们从探头基底上突起。
在本发明的测试组件中,柱销从探头基底突起的距离不大于1.5毫米。
在本发明的测试组件中,端子可以是与探头基底的表面齐平或凹陷到其表面以下的衬垫。
在本发明的测试组件中,每个端子的至少第一层可包括镍-钴、镍、铜、钴、钯或它们的合金。
在本发明的测试组件中,每个端子的至少第二层可与第一层分离,并包括钯、钴、硬质黄金、软质黄金、铑或它们的合金。
在本发明的测试组件中,电子器件可以是一半导体晶片,它包括多个未分离的半导体片。
在本发明的测试组件中,探测卡可构制成接触n个细长的弹性接触元件,每个细长的弹性接触元件具有一弹簧常数Ks,探测卡具有一大于nKs的弹簧率。
通过以下的描述及附图,可以更成分地理解本发明的上述和其它的目的和优点以及一示例性实施例的细节。
附图简述
图1表示一用于探测传统半导体器件的探测卡。
图2表示一用于探测具有突起的接触元件的半导体器件的探测卡。
图3表示用于探测具有突起的接触元件的半导体器件的探测卡的第二个
实施例。
图4到9表示用于形成适用于本发明的探测卡中的一柱销的工艺的诸步骤。
图10和11表示本发明的与一具有行程止动保护件的晶片一起使用的装置。
较佳实施例的描述
图1的探测卡组件已在上述经普通转让的美国专利No.5,974,662中作了详细的描述。该图是5,974,662专利的图5,该专利使用的是500系列的标号,而在这里重新标号为100系列。
参见图2,图1的探测卡组件经略微修改而用于新的用途。相同的构件包括安装于一探头(未图示)中的支承探测卡102。插入器112包括弹簧114和相应的弹簧116,它们通过插入器相连接,使相应的端子110和120电气连接。在间隔变换器106中,相应的端子120和222(图1中的122)相连接。探测卡102支承连接电路,因而一测试引线可连接于一相应的端子110,然后通过114、116、120和222(或122)接纳来自一半导体器件的连接部。在图1中,弹性接触元件124连接于端子122,并与半导体晶片108上的端子126相接触。在图2中,半导体晶片208具有端子226,这些端子进而具有突起的接触元件,在这里是弹性接触元件224,它们可与相应端子222的相应接触区域相接触,从而实现一个通到测试器的回路。测试器可对一个连接的半导体器件通电,以评价该器件的功能性。
具有弹簧114和116的插入器112压靠于端子110和120上。通过将间隔变换器106克服插入器112的弹簧力而朝探测卡102压,即使端子110和端子120的弹簧114、弹簧116的尖端的平面度不佳,插入器也可保持与各个相应的端子110和120接触。而且,在各构件的弹性极限范围内,间隔变换器可相对于探测卡而倾斜,以允许在某些尺寸下的对准。可非常精确地调节差动螺钉138和136,以使间隔变换器118的表面相对于探测卡102重新定向。因此,可使任何相应连接于间隔变换器的元件定向。图1中的弹簧124和图2中的端子222的尖端可以相对于半导体晶片而作高精度地定位。
参见图3,图中可以看到图2诸构件的另一实施例。主要的构件的功能与参照图2所描述的相同。间隔变换器324支承端子336和335,它们适当地相连接。插入器325支承弹性接触元件334和333。探测卡321支承端子332和331,它们适当地相连接。通常,来自测试器的一引线将连接于端子331,该端子进而连接于端子332,然后通过弹性接触元件333和334连接于端子335,最后连接于相应的端子336。支承弹簧320将间隔变换器324保持压靠于插入器325和探测卡321上。定向装置322以上述方式工作,精调间隔变换器相对于探测卡321的取向。
图3更大范围地示出了半导体晶片310,它在这里具有几个不同的半导体器件311。在此,示出了一单个的半导体器件,它几乎与相应的端子336相连。通过使半导体晶片310朝探测卡321移动,可使一微弹簧接触件336与相应端子336的接触区域直接而紧密地接触,并因此而连接于一相应的测试器引线。在测试后,可对半导体晶片重新定位,使另一个半导体器件与探测卡组件上的相应端子相接触。
图4示出了制造柱销结构的一特别优选的方法。制造插入器、间隔变换器和探测卡的细节详细描述于经普通转让的美国专利No.5,974,662中以及该专利所引用的早先申请中。
参见图4,在结构400中,支承基底405包括端子410、互连件420和端子415。合适的材料以及备选成分详细描述于所引用的申请中。对于一较佳实施例,支承基底是一多层陶瓷基底。导电层417连接多个端子415(其它端子未图示出)。对随后步骤的更详细的描述可参见名为“平版印刷接触元件”的、经普通转让的待批美国专利申请No.09/205,423以及于1999年11月23日提交的相应PCT申请(申请号还未知悉)。图4到7是摘自该相应申请的图1到4。
在电镀工艺中,在需要电镀的元件之间提供一共用的连接部是有利的,可用以提供一合适的电镀回路。可以使用其它的镀覆方法来形成类似于本文所述的结构。此类方法描述或引用于美国专利No.5,974,662及提供支持的申请中。短路层、诸如417的另一种方法是,提供一直接连接多个端子410(这里仅示出一个)的短路层407。这两种方法在这里均示出,但实际上通常仅使用其中的一种。当没有方便的方法来通过基底进行连接时,使用一“顶”层、诸如407尤为有利。当使用硅作为基底或者某些陶瓷、聚酰亚胺或其它材料的结构时,情况也可能是如此。
短路层407可通过溅射法来涂覆。材料、厚度、加工偏差等的细节可参见1998年2月26日提交的、名为“平版印刷形成的微端子接触结构”的、经普通转让的相应美国专利申请09/032,473以及以WO 98/52224在1999年11月19日公开的相应PCT申请,这两个申请整个援引在此供参考。一种尤为优选的材料是钨和钛的合金。它可以通过溅射法来涂覆。有效的深度约为3000到6000埃,例如约为4500埃。也可以使用各种不同的钛合金或钨合金。
可将一抗蚀层、诸如一负光致抗蚀剂425涂覆于基底的表面(当然是位于任何其它所涂覆的层的顶部)。该抗蚀层的图案形成为在端子410上留下一个开口。
将一种合适的结构材料430涂覆于光致抗蚀剂的开口中,并溢出该开口。在一较佳实施例中,电镀涂覆诸如镍钴合金之类的材料。可以使用的其它材料包括铜、钯、钯钴以及含这些材料的合金。其它诸如溅射之类的涂覆方法也是合适的。
可用诸如化学-机械抛光之类的抛光或研磨工艺来去除多余的结构材料,以形成一高度平整的结构。而且,对基底上的其它结构进行平整化。在一单个柱销的区域中和在一系列柱销上要求有最小的高程差。希望达到约为1/1000的平整度(在相对较远的相应特征处测量的表面以上高度),但给定设计的特定约束可较好地允许达2-5-10/1000甚至更大。这与每直线英寸约为100微英寸或每厘米约为1微米的高度一致性相对应。
在一较佳实施例中,涂覆一附加的接触层。参见图8,在结构材料430上涂覆有一接触层431。在一较佳实施例中,该层是通过电镀涂覆的。优选的材料是钯和钴的合金。可以使用的其它材料包括钯、硬质黄金、软质黄金和铑。厚度可以根据接触元件制造技术领域的技术人员所掌握的设计标准来进行选择。在一较佳实施例中,厚度约为0到200微英寸(约为0到5微米)。
剥去光致抗蚀剂的面层,并去除导电层407或417,从而完成该结构。可以使用的技术包括灰化、湿蚀刻以及激光消融。有关时间、材料和条件的细节在现有技术中是众所周知的。参见图9,之后,可将所完成的结构400装入如图2或3所示的一探测卡组件中。
使用这种方法,端子的几何结构相当灵活,设计者在设计时有较大的自由度。形成横截面(基本平行于基底表面的XY平面)基本为方形的柱销相当简单。在X和Y方向上约为1到10毫英寸。显然,这里可以设计几乎任何的尺寸和形状。使结构高出基底表面约0到60毫英寸(0到1.5毫米)是有利的。当然,端子实际上可以凹陷到基底表面以下,只要所有端子都高度平坦即可。可以使用的高度约为5到10毫英寸(125到250微米)。另一个较佳实施例包括高度约为40到60毫英寸(约1到1.5毫米)的结构。
使探头结构定向,使其尽可能与待测试的晶片的平面对齐,这是非常有利的。使间隔变换器的表面适度地平整,这也是非常有益的。假如晶片上的诸弹性接触结构的接触端(从一个方面讲是“尖端”)基本是共面的,使共面的尖端穿过对齐的平面而与共面的端子相接触意味着这些尖端可被压下一最小的量以确保所有尖端与所有端子接触。无论在尖端、端子或接触平面的不对齐中存在多少不共面性,它们均会使尖端的某些部分必须移动更长距离以确保所有尖端都处于令人满意的接触状态。这里所描述的结构可以很容易地制得相对较平,并成功定向成在晶片上实现最小驱动。在一较佳设计中,约为3毫英寸(75微米)的超程是一个有利的设计点。也就是说,从第一尖端接触一相应端子的点,与该尖端相对应的基部被驱动这段超程距离而变得更靠近于端子。这就将尖端压靠于端子上,在许多设计中,这使尖端在端子上滑动,从而钻入和穿过可能存在于尖端或端子上的任何污垢。这也可使其它的尖端与相应的端子相接触。如果构件经适当设计和对齐,经选择的超程度将使最后接触相应端子的尖端仍能够建立合适的接触。
具有弹簧的晶片的某些例子具有一超程止动保护件。这种超程止动保护件详细描述于以单独发明人Benjamin Eldridge名义于1998年7月13日提交的、名为“互连组件和方法”的美国专利申请09/114,586以及相应的、于1999年1月4日提交的PCT申请US 99/00322中。参见图10,图中可以看到这种超程止动保护件的一个例子。将半导体晶片1008制成包括端子1026,并具有弹性接触元件1024。比较图2中的208、226和224。另外,包括一超程止动保护件1025。在一较佳实施例中,它是采用固化的环氧树脂的形式。该保护件可采用许多形式。如图所示,该保护件或多或少可以是环氧树脂领域,它基本是平的,并具有仅用于弹性接触元件1024的开口。止动保护件的高度选择成使各弹性接触元件可变形所需的量但可变化到保护件的高度的“下方”,从而有效地限制超程。具有这种止动保护件的晶片可以用以上在图2和3中所描述的同一装置来测试。
参见图10和11,当弹性接触元件1024最初接触相应端子222时,弹性接触元件先接触相应的端子,然后开始刮擦其表面。在图11中,弹性接触元件1024A已处于接触状态,并已受压一定的程度。在图11中,各端子222已与一相应的超程止动保护件1025相接触,不会进一步压下相应的弹性接触元件1024A。如果半导体晶片1008被进一步朝探测卡102(图10中所示)驱动,则超程止动保护件1025将压靠于端子222上,从而将间隔变换器106朝探测卡102驱动。利用半导体晶片1008上足够的驱动力,探测卡102将朝离开半导体晶片的方向变形。设计者可选择探测卡的刚性,以适应预计的探测力。一个需要考虑的因素是预计将要接触探测卡组件的弹性接触元件的数量。另一个因素是各弹簧的弹簧常数。另一个需要考虑的因素是当探测卡被过度驱动时探测卡应屈服多少。通常,如果每个弹性接触元件的弹簧常数为Ks,则对于n个弹簧来说,接触弹簧的有效弹簧率为nKs。在一个较佳实施例中,探测卡的弹簧率Kpcb大于或等于nKs。尤为优选的是,Kpcb约为nKs的2倍。
一个尤为优选的操作模式是使超程止动件均匀地碰到探测卡组件,进而提供很小的或不提供额外的力。
以上总的描述了使用本发明的装置和方法以及本发明的一较佳实施例。本技术领域的技术人员在上述装置和方法的许多方面可以认识到和能够进行许多变化,包括落在本发明揭示范围之内的各种变型。本发明的精神和范围仅应由所附权利要求书限定。
Claims (8)
1.一种测试组件,包括:
一电子器件,它包括从所述电子器件的一表面延伸出来的细长的弹性接触元件;
一探测卡;
一探头基底,它具有多个端子,每个端子被压靠于并压迫所述细长的弹性接触元件中的一个;
一插入器基底,它设置在所述探测卡与所述探头基底之间并与它们隔开;
多个细长的互连件,它们通过所述插入器基底在所述探测卡与所述探头基底之间提供柔顺的电气连接;以及
一改变所述探头基底相对于所述探测卡的取向的机构。
2.如权利要求1所述的测试组件,其特征在于,所述端子是柱销,它们从探头基底上突起。
3.如权利要求2所述的测试组件,其特征在于,所述柱销从所述探头基底突起的距离不大于1.5毫米。
4.如权利要求1所述的测试组件,其特征在于,所述端子是与所述探头基底的表面齐平或凹陷到其表面以下的衬垫。
5.如权利要求1所述的测试组件,其特征在于,每个所述端子的至少第一层包括镍-钴、镍、铜、钴、钯或它们的合金。
6.如权利要求5所述的测试组件,其特征在于,每个所述端子的至少第二层与所述第一层分离,并包括钯、钴、硬质黄金、软质黄金、铑或它们的合金。
7.如权利要求1所述的测试组件,其特征在于,所述电子器件是一半导体晶片,它包括多个未分离的半导体片。
8.如权利要求1所述的测试组件,其特征在于,所述探测卡构制成接触n个细长的弹性接触元件,每个细长的弹性接触元件具有一弹簧常数Ks,所述探测卡具有一大于nKs的弹簧率。
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-
1998
- 1998-12-02 US US09/204,740 patent/US6483328B1/en not_active Expired - Fee Related
-
1999
- 1999-12-02 EP EP03003496A patent/EP1326079B1/en not_active Expired - Lifetime
- 1999-12-02 JP JP2000585681A patent/JP3727540B2/ja not_active Expired - Fee Related
- 1999-12-02 CN CNB998137901A patent/CN1201161C/zh not_active Expired - Fee Related
- 1999-12-02 DE DE69908639T patent/DE69908639T2/de not_active Expired - Lifetime
- 1999-12-02 TW TW088121093A patent/TW589462B/zh not_active IP Right Cessation
- 1999-12-02 CN CNB2005100551062A patent/CN100526901C/zh not_active Expired - Fee Related
- 1999-12-02 EP EP99963010A patent/EP1135693B1/en not_active Expired - Lifetime
- 1999-12-02 AU AU19337/00A patent/AU1933700A/en not_active Abandoned
- 1999-12-02 WO PCT/US1999/028746 patent/WO2000033096A1/en not_active Application Discontinuation
- 1999-12-02 DE DE69936470T patent/DE69936470T2/de not_active Expired - Lifetime
- 1999-12-02 KR KR10-2001-7006673A patent/KR100430208B1/ko not_active IP Right Cessation
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2002
- 2002-07-16 US US10/198,198 patent/US6937037B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN1702470A (zh) | 2005-11-30 |
CN100526901C (zh) | 2009-08-12 |
JP2002531836A (ja) | 2002-09-24 |
EP1135693B1 (en) | 2003-06-04 |
WO2000033096A1 (en) | 2000-06-08 |
EP1326079A2 (en) | 2003-07-09 |
KR20010086060A (ko) | 2001-09-07 |
DE69908639D1 (de) | 2003-07-10 |
DE69908639T2 (de) | 2004-05-13 |
EP1326079A3 (en) | 2004-05-19 |
EP1135693A1 (en) | 2001-09-26 |
TW589462B (en) | 2004-06-01 |
AU1933700A (en) | 2000-06-19 |
JP3727540B2 (ja) | 2005-12-14 |
DE69936470D1 (de) | 2007-08-16 |
KR100430208B1 (ko) | 2004-05-03 |
US6937037B2 (en) | 2005-08-30 |
US6483328B1 (en) | 2002-11-19 |
EP1326079B1 (en) | 2007-07-04 |
CN1328644A (zh) | 2001-12-26 |
US20030038647A1 (en) | 2003-02-27 |
DE69936470T2 (de) | 2008-03-06 |
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