CN118647844A - 信号处理电路和光检测装置 - Google Patents

信号处理电路和光检测装置 Download PDF

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Publication number
CN118647844A
CN118647844A CN202380019711.0A CN202380019711A CN118647844A CN 118647844 A CN118647844 A CN 118647844A CN 202380019711 A CN202380019711 A CN 202380019711A CN 118647844 A CN118647844 A CN 118647844A
Authority
CN
China
Prior art keywords
circuit
terminal
signal
comparison circuit
signal processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202380019711.0A
Other languages
English (en)
Chinese (zh)
Inventor
岛田陆
藤田卓也
马场隆
足立俊介
岩科进也
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu Photonics KK
Original Assignee
Hamamatsu Photonics KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK
Publication of CN118647844A publication Critical patent/CN118647844A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
    • H04N25/773—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters comprising photon counting circuits, e.g. single photon detection [SPD] or single photon avalanche diodes [SPAD]
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • G01J1/46—Electric circuits using a capacitor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • G01J2001/444—Compensating; Calibrating, e.g. dark current, temperature drift, noise reduction or baseline correction; Adjusting
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • G01J2001/4446—Type of detector
    • G01J2001/446—Photodiode
    • G01J2001/4466—Avalanche

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Light Receiving Elements (AREA)
CN202380019711.0A 2022-02-01 2023-01-27 信号处理电路和光检测装置 Pending CN118647844A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022-014282 2022-02-01
JP2022014282 2022-02-01
PCT/JP2023/002700 WO2023149382A1 (ja) 2022-02-01 2023-01-27 信号処理回路、及び、光検出装置

Publications (1)

Publication Number Publication Date
CN118647844A true CN118647844A (zh) 2024-09-13

Family

ID=87552375

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202380019711.0A Pending CN118647844A (zh) 2022-02-01 2023-01-27 信号处理电路和光检测装置

Country Status (5)

Country Link
US (1) US20250116551A1 (https=)
JP (1) JPWO2023149382A1 (https=)
CN (1) CN118647844A (https=)
DE (1) DE112023000750T5 (https=)
WO (1) WO2023149382A1 (https=)

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07306133A (ja) * 1994-03-14 1995-11-21 Hitachi Electron Eng Co Ltd 微粒子検出器
EP1875271B1 (en) * 2005-04-22 2011-06-22 Koninklijke Philips Electronics N.V. Digital silicon photomultiplier for tof-pet
US9568620B2 (en) 2014-09-22 2017-02-14 General Electric Company Solid state photomultiplier
JP7271091B2 (ja) * 2018-05-10 2023-05-11 浜松ホトニクス株式会社 裏面入射型半導体光検出装置
US10158038B1 (en) * 2018-05-17 2018-12-18 Hi Llc Fast-gated photodetector architectures comprising dual voltage sources with a switch configuration
JP7170448B2 (ja) * 2018-07-25 2022-11-14 キヤノン株式会社 撮像素子、撮像装置及び信号処理方法
US11340109B2 (en) * 2019-05-24 2022-05-24 Infineon Technologies Ag Array of single-photon avalanche diode (SPAD) microcells and operating the same
CN112945379B (zh) * 2021-02-03 2024-03-12 中国科学院长春光学精密机械与物理研究所 一种单光子探测器死时间设置与噪声滤除的系统

Also Published As

Publication number Publication date
JPWO2023149382A1 (https=) 2023-08-10
DE112023000750T5 (de) 2024-11-21
US20250116551A1 (en) 2025-04-10
WO2023149382A1 (ja) 2023-08-10

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