CN118588529B - IBE ion beam etching device - Google Patents

IBE ion beam etching device Download PDF

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Publication number
CN118588529B
CN118588529B CN202411072440.8A CN202411072440A CN118588529B CN 118588529 B CN118588529 B CN 118588529B CN 202411072440 A CN202411072440 A CN 202411072440A CN 118588529 B CN118588529 B CN 118588529B
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China
Prior art keywords
etching
flow channel
circular plate
wafer
lifting
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CN202411072440.8A
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Chinese (zh)
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CN118588529A (en
Inventor
杜宝胜
罗瑞旭
孙家晟
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Suzhou Youlun Vacuum Equipment Technology Co ltd
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Suzhou Youlun Vacuum Equipment Technology Co ltd
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Priority to CN202411072440.8A priority Critical patent/CN118588529B/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00523—Etching material
    • B81C1/00531—Dry etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32743—Means for moving the material to be treated for introducing the material into processing chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32788—Means for moving the material to be treated for extracting the material from the process chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7612—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by lifting arrangements, e.g. lift pins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7626—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

The invention discloses an IBE ion beam etching device, which comprises: the invention discloses a wafer etching device, which comprises a vacuum chamber, wherein a vacuum pump assembly is arranged above the vacuum chamber, an ion beam generating device is arranged on the rear wall of the vacuum chamber, a rotary driving structure is arranged on the left side of the vacuum chamber, an etching carrying platform is arranged in the vacuum chamber in a rotary mode, the rotary driving structure is connected with the etching carrying platform in a driving mode, a wafer feeding port is formed in the right side wall of the vacuum chamber, the etching carrying platform comprises a carrying platform plate, a rotary driving assembly, a wafer lifting and compressing assembly, a baffle driving cylinder and an induction device are fixedly arranged in the space between the carrying platform plate and a sealing box, and the parts are fixedly connected with the carrying platform plate and are sealed at the connecting position.

Description

IBE ion beam etching device
Technical Field
The invention relates to the technical field of semiconductor processing equipment, in particular to an IBE ion beam etching device.
Background
In the field of semiconductor technology or micro-electromechanical systems, patterning processing by using an ion beam etching method is a very common anisotropic etching means, and because of the high compatibility of IBE on etching materials, materials which are difficult to process in micro-processing technology such as metal, ceramic, various compounds and the like can be etched, and important complementary effects are achieved besides wet etching and chemical reaction ion etching.
The wafer carrier of the existing ion beam etching machine is basically fixed, so that the ion beam etching process is not uniform, the yield is low, and the wafer is fed and fixed in an independent mode or by manual equipment, so that the feeding and fixing automation degree of the wafer is not high, and the etching efficiency is affected.
Therefore, we propose an IBE ion beam etching apparatus in order to solve the above-mentioned problems.
Disclosure of Invention
The invention aims to provide an IBE ion beam etching device for solving the problems in the background technology.
In order to achieve the above purpose, the present invention provides the following technical solutions: an IBE ion beam etching apparatus comprising: the vacuum chamber is provided with a vacuum pump assembly above, the rear wall of the vacuum chamber is provided with an ion beam generating device, the left side of the vacuum chamber is provided with a rotary driving structure, the inside of the vacuum chamber is rotationally provided with an etching carrier, the rotary driving structure is in driving connection with the etching carrier, and the right side wall of the vacuum chamber is provided with a wafer feeding port;
The etching carrier comprises a carrier plate, a rotary driving assembly, a wafer lifting and pressing assembly, a baffle driving cylinder and an induction device are fixedly arranged in the space between the carrier plate and the sealing box, the components are fixedly connected with the carrier plate, and the joint is sealed;
the rotary driving assembly is in driving connection with the etching rotary table;
a liquid flow channel and a gas flow channel which are cooled circularly are arranged in the etching rotary table;
The wafer lifting and pressing assembly comprises two lifting driving cylinders symmetrically and fixedly arranged on the lower surface of the carrying table plate, wherein the lifting driving cylinders are provided with pneumatic telescopic ends, and the upper ends of the telescopic ends are fixedly connected with lifting rings;
The lifting ring is sleeved on the outer side of the fixed table, the lifting ring is movably arranged above the lifting ring, the lifting ring is positioned right below the etching rotary table, the lifting ring is fixedly connected with the pressing ring through three lifting rods, the pressing ring is positioned right above the etching rotary table, and the lifting rods penetrate through the etching rotary table in a sliding manner;
three wafer ejector pins are fixedly arranged on the upper surface of the lifting ring, the wafer dome pins movably penetrate through the etching rotary table, the wafer dome pins are positioned on one side, close to the circle center of the first circular plate, of the lifting rod, the wafer ejector pins and the lifting rod are distributed at equal intervals in the circle center of the etching rotary table, and the upper ends of the wafer ejector pins are lower than the lifting rod;
and the upper surface of the lifting ring is also provided with three spring limiting mechanisms.
Preferably, the rotary driving structure comprises a first servo motor, the output end of the first servo motor is connected with a speed reducer, the speed reducer is connected with a pipe sleeve through a gear structure, the pipe sleeve is fixedly connected with a rotary flange sleeve, a sealing sleeve is movably sleeved outside the rotary flange sleeve, a connecting sleeve is fixedly sleeved outside the sealing sleeve, the connecting sleeve is fixedly connected with the left wall of the vacuum chamber, the pipe sleeve is rotatably connected with a fixing plate through a bearing, a spool is movably arranged on the pipe sleeve, the spool is communicated with a rotating arm, and a needed tracheal wire passage is provided for the rotating arm.
Preferably, the rotating arm is fixedly connected with the carrying platform plate, a wire hole communicated with the wire tube is formed in the rotating arm, and the lower part of the carrying platform plate is connected with the sealing box in a sealing mode.
Preferably, the rotary driving assembly comprises a second servo motor, the second servo motor is connected with a reduction gearbox, the reduction gearbox is connected with a rotary column platform through a belt pulley structure in a transmission mode, a fixed platform is sleeved outside the rotary column platform, the fixed platform is fixedly and hermetically connected with a carrying table plate, the upper end of the rotary column platform is fixedly connected with an etching rotary platform, and a liquid flow channel and an air inlet flow channel are formed in the rotary column platform.
Preferably, the etching rotary table is mainly formed by sequentially fixing and stacking a first circular plate, a second circular plate, a third circular plate and a fourth circular plate from top to bottom, wherein a circular groove for accommodating a wafer is formed in the upper surface of the first circular plate.
Preferably, the first gas flow channel is arranged on the lower surface of the first circular plate, the second gas flow channel is arranged on the upper surface of the second circular plate, the first gas flow channel and the second gas flow channel form a complete gas flow channel, the air inlet flow channel is connected with the first gas flow channel and the second gas flow channel, the lower surface of the second circular plate is provided with a liquid circulation groove, the third circular plate and the fourth circular plate are provided with liquid flow holes communicated with the liquid circulation groove and the liquid flow channel, and air holes communicated with the second gas flow channel and the air inlet flow channel are further arranged between the third circular plate and the fourth circular plate.
Preferably, the telescopic end is sleeved with a corrugated sealing pipe, and the corrugated sealing pipe is fixedly connected with the jacking ring in a sealing manner.
Preferably, the spring limiting mechanism comprises a limiting guide pipe, the limiting guide pipe is fixedly arranged on the upper surface of the lifting ring, a connecting rod is arranged in the limiting guide pipe in a sliding mode, the upper end of the connecting rod is fixedly connected with a first circular plate, the lower end of the connecting rod penetrates through the lifting ring in a sliding mode, a spring is sleeved outside the connecting rod and is also positioned in the limiting guide pipe, the upper end of the spring is abutted to the first circular plate, and the lower end of the spring is abutted to the bottom of the limiting guide pipe.
Preferably, the baffle driving cylinder is in driving connection with a rotary shielding assembly, the rotary shielding assembly is positioned above the carrying platform plate, and the rotary shielding assembly comprises a shielding circular plate, and the rotation of the rotary shielding assembly can shield the etching carrying platform.
Preferably, the induction device is positioned at one side of the lifting ring, the side surface of the lifting ring is provided with the magnetic sheet, and the induction device is in induction connection with the magnetic sheet.
Compared with the prior art, the invention has the beneficial effects that:
1. The rotary driving structure is driven to rotate on the etching carrier, so that the wafer is in an angle-adjustable state in the etching process, and more accurate and complex etching can be completed;
2. Meanwhile, the rotary driving assembly drives the etching rotary table to rotate, so that the wafer can uniformly receive ion beams, and the etching stability and the yield are greatly improved;
3. The wafer lifting and pressing assembly can automatically fix the wafer, and is matched with the vacuum transmission system to discharge the wafer, so that the degree of automation is high, and the etching efficiency is improved.
Drawings
FIG. 1 is a schematic diagram of the structure of the present invention;
FIG. 2 is a rear view of the present invention;
FIG. 3 is a schematic view showing the internal structure of a vacuum chamber according to the present invention;
FIG. 4 is a schematic view of a rotary driving structure according to the present invention;
FIG. 5 is a schematic view of a disassembled structure of the rotary driving structure and the etching stage according to the present invention;
FIG. 6 is an enlarged view of a portion of a rotary drive structure and an etch stage in accordance with the present invention;
FIG. 7 is an enlarged view of the invention at A of FIG. 5;
FIG. 8 is a schematic diagram of an etching stage according to the present invention;
FIG. 9 is a side view of the wafer lift and hold down assembly and etch turntable of the present invention;
FIG. 10 is a side plan view of the wafer lift and hold down assembly and etch turntable of the present invention;
FIG. 11 is a top view of the disassembled side of the etch rotating table of the present invention;
FIG. 12 is a bottom view of the disassembled side of the etch rotating table of the present invention;
Fig. 13 is a schematic structural view of a spring limiting mechanism in the present invention.
In the figure: 1. a vacuum chamber; 11. a wafer feed port; 2. a vacuum pump assembly; 3. a rotary driving structure; 31. a first servo motor; 32. a speed reducer; 33. connecting sleeves; 34. a conduit; 35. a pipe sleeve; 36. sealing sleeve; 37. rotating the flange sleeve; 4. ion beam generating means; 5. etching the carrier; 51. a carrier plate; 52. a rotating arm; 521. a wire hole; 53. rotating the shielding assembly; 54. a rotary drive assembly; 541. a second servo motor; 542. a reduction gearbox; 543. a pulley structure; 544. rotating the pylons; 5441. a liquid flow channel; 5442. an intake runner; 545. a fixed table; 55. a wafer lifting and pressing assembly; 551. a lifting driving cylinder; 552. a corrugated sealing tube; 553. a telescoping end; 554. a jacking ring; 555. a lifting rod; 556. a wafer thimble; 557. a compression ring; 558. a lifting ring; 559. a spring limit mechanism; 5591. limiting guide pipes; 5592. a connecting rod; 5593. a spring; 56. a baffle driving cylinder; 57. an induction device; 58. etching a rotary table; 581. a first circular plate; 5811. a first gas flow passage; 582. a second circular plate; 5821. a second gas flow path; 5822. a liquid circulation tank; 583. a third circular plate; 5831. air holes; 5832. a liquid flow aperture; 584. a fourth circular plate; 59. and (5) sealing the box.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Referring to fig. 1-13, the present invention provides a technical solution: an IBE ion beam etching apparatus comprising: the wafer etching device comprises a vacuum chamber 1, a vacuum pump assembly 2 is arranged above the vacuum chamber 1, an ion beam generating device 4 is arranged on the rear wall of the vacuum chamber 1, a rotary driving structure 3 is arranged on the left side of the vacuum chamber 1, an etching carrying platform 5 is rotatably arranged in the vacuum chamber 1, the rotary driving structure 3 is in driving connection with the etching carrying platform 5 to enable the etching carrying platform 5 to rotate, and wafers arranged on the etching carrying platform 5 uniformly receive ion beams emitted by the ion beam generating device 4, so that the wafer etching is more uniform;
The right side wall of the vacuum chamber 1 is provided with a wafer feed port 11 for conveying a wafer to the etching carrier 5 by a mechanical arm;
The rotary driving structure 3 comprises a first servo motor 31, the output end of the first servo motor 31 is connected with a speed reducer 32, the speed reducer 32 is connected with a pipe sleeve 35 through a gear structure in a driving way, the pipe sleeve 35 is fixedly connected with a rotary flange sleeve 37, a sealing sleeve 36 is movably sleeved outside the rotary flange sleeve 37, a connecting sleeve 33 is fixedly sleeved outside the sealing sleeve 36, the connecting sleeve 33 is fixedly connected with the left wall of the vacuum chamber 1, the pipe sleeve 35 is rotatably connected with the connecting sleeve 33 through a bearing and a fixed plate, a wire tube 34 is movably arranged on the pipe sleeve 35, the wire tube 34 is communicated with a rotating arm 52, a needed tracheal wire passage is provided for the rotating arm 52, and the rotary driving of the rotary driving structure 3 to the etching carrying platform 5 is ensured while the vacuum of the vacuum chamber 1 is not leaked;
the etching carrying platform 5 comprises a carrying platform plate 51, a rotating arm 52 is fixedly arranged on the carrying platform plate 51, a wire hole 521 communicated with the wire tube 34 is formed in the rotating arm 52, and a sealing box 59 is connected under the carrying platform plate 51 in a sealing manner;
The space in the carrying table plate 51 and the sealing box 59 is fixedly provided with a rotary driving assembly 54, a wafer lifting and pressing assembly 55, a baffle driving cylinder 56 and an induction device 57, and the components are fixedly connected with the carrying table plate 51 and the joint is sealed;
The rotary driving assembly 54 comprises a second servo motor 541, the second servo motor 541 is connected with a reduction gearbox 542, the reduction gearbox 542 is in transmission connection with a rotary column table 544 through a belt pulley structure 543, a fixed table 545 is sleeved outside the rotary column table 544, the fixed table 545 is fixedly and hermetically connected with the carrier plate 51, and the rotary column table 544 is in sealed and rotary connection with the carrier plate 51 through the fixed table 545;
The upper end of the rotary column 544 is fixedly connected with an etching rotary table 58, and the rotary driving assembly 54 drives the etching rotary table 58 to rotate, so that wafers on the etching rotary table can uniformly receive ion beams;
The etching rotary table 58 is mainly formed by sequentially fixing and stacking a first circular plate 581, a second circular plate 582, a third circular plate 583 and a fourth circular plate 584 from top to bottom, wherein a circular groove for accommodating a wafer is formed in the upper surface of the first circular plate 581, a first gas flow channel 5811 is formed in the lower surface of the first circular plate 581, a second gas flow channel 5821 is formed in the upper surface of the second circular plate 582, the first gas flow channel 5811 and the second gas flow channel 5821 form a complete gas flow channel for pouring low-temperature gas, the wafer on the first circular plate 581 is cooled, a liquid flow channel 5441 and an air inlet flow channel 5442 are formed in the rotary column 544, and the air inlet flow channel 5442, the first gas flow channel 5811 and the second gas flow channel 5821 are poured in through the outside;
The lower surface of the second circular plate 582 is provided with a liquid circulation groove 5822, the third circular plate 583 and the fourth circular plate 584 are provided with a liquid flow hole 5832 which is communicated with the liquid circulation groove 5822 and the liquid flow channel 5441, so that external cooling liquid is poured in, the second circular plate 582 is cooled, and finally, the wafer is cooled;
an air hole 5831 which is communicated with the second air flow channel 5821 and the air inlet flow channel 5442 is also arranged between the third circular plate 583 and the fourth circular plate 584, so that the low-temperature air can smoothly reach the air flow channel;
The wafer lifting and pressing assembly 55 comprises two lifting driving cylinders 551 symmetrically and fixedly arranged on the lower surface of the carrier plate 51, the lifting driving cylinders 551 are provided with pneumatic telescopic ends 553, the telescopic ends 553 are sleeved with corrugated sealing pipes 552, the upper ends of the telescopic ends 553 are fixedly connected with lifting rings 554, the corrugated sealing pipes 552 are fixedly connected with the lifting rings 554 in a sealing mode, and the telescopic ends 553 are in a sealing state to prevent the vacuum state of the vacuum chamber 1 from being damaged;
The lifting ring 554 is sleeved on the outer side of the fixed table 545, a lifting ring 558 is movably arranged above the lifting ring 554, the lifting ring 558 is positioned under the etching rotary table 58, the lifting ring 558 is fixedly connected with the pressing ring 557 through three lifting rods 555, the pressing ring 557 is positioned right above the etching rotary table 58, the lifting rods 555 penetrate through the etching rotary table 58 in a sliding manner, when the lifting driving cylinder 551 drives the telescopic end 553 to lift, the lifting ring 554 is lifted up, the wafer can be smoothly fed to the first circular plate 581, the pressing ring 557 is driven to descend when the lifting ring 558 descends, and the wafer is buckled on the first circular plate 581, so that the automatic fixing of the wafer is realized;
Three wafer ejector pins 556 are fixedly arranged on the upper surface of the lifting ring 558, the wafer ejector pins 556 movably penetrate through the etching rotary table 58, the wafer ejector pins 556 are positioned on one side, close to the circle center of the first circular plate 581, of the lifting rod 555, the wafer ejector pins 556 and the lifting rod 555 are distributed at equal intervals in the circle center of the etching rotary table 58, and the upper ends of the wafer ejector pins 556 are lower than the lifting rod 555;
when the lifting ring 558 drives the press ring 557 to lift, the wafer dome needle 556 lifts along with the lifting ring and penetrates out of the first circular plate 581, the wafer is placed on the wafer thimble 556 by the mechanical arm, the lifting ring 558 descends, the press ring 557 and the wafer thimble 556 synchronously descend, the wafer thimble 556 firstly retracts into the etching rotary table 58 to enable the wafer to fall into a circular groove on the first circular plate 581, the press ring 557 continuously descends and is buckled at the edge of the wafer, and automatic fixing of the wafer is completed;
The upper surface of the lifting ring 558 is also provided with three spring limiting mechanisms 559, each spring limiting mechanism 559 comprises a limiting guide tube 5591, each limiting guide tube 5591 is fixedly arranged on the upper surface of the lifting ring 558, a connecting rod 5592 is arranged in each limiting guide tube 5591 in a sliding manner, the upper end of each connecting rod 5592 is fixedly connected with a first circular plate 581, the lower end of each connecting rod 5592 penetrates through the lifting ring 558 in a sliding manner, a spring 5593 is sleeved outside each connecting rod 5592, the springs 5593 are also positioned in each limiting guide tube 5591, the upper ends of the springs 5593 are in abutting connection with the first circular plates 581, and the lower ends of the springs 5593 are in abutting connection with the bottoms of the limiting guide tubes 5591;
when the lifting ring 558 ascends, the connecting rod 5592 moves downwards relative to the lifting ring 558, the spring 5593 is compressed, when the lifting ring 558 descends and is not stressed, the spring 5593 resets to push the lifting ring 558 downwards relative to the first circular plate 581, so that the lifting ring 558 pulls the pressing ring 557 to descend, the reaction force of the spring 5593 is utilized to drive the pressing ring 557 to press the wafer, and therefore the stability of the pressing of the wafer during rotation and angle adjustment is ensured;
the baffle driving cylinder 56 is in driving connection with the rotary shielding component 53, the rotary shielding component 53 is positioned above the carrier plate 51, the rotary shielding component 53 comprises a shielding circular plate, the rotation of the rotary shielding component can shield the etching carrier 5 to prevent the ion beam from being emitted in advance, and when the ion beam reaches the specified energy, the baffle driving cylinder 56 drives the rotary shielding component 53 to rotate and separate from the upper part of the carrier plate 51, so that the etching is smoothly and stably carried out;
the sensing device 57 is located at one side of the lifting ring 558, the side surface of the lifting ring 558 is provided with magnetic sheets, and the lifting position and the rotating position of the lifting ring 558 are determined by sensing, so that each time the wafer is loaded, the spring limiting mechanism 559, the lifting rod 555 and the wafer dome needle 556 rotate to an included angle, and the wafer smoothly enters the first circular plate 581 without being blocked.
Working principle: the wafer is fed into the upper part of the first circular plate 581 from the wafer feeding hole 11 by the feeding mechanical arm, the wafer lifting and pressing assembly 55 works, the lifting driving cylinder 551 drives the lifting ring 554 to descend, the pressing ring 557 is reset and pressed down by the spring 5593 to buckle the wafer, the rotating shielding assembly 53 rotates to shield the wafer, after the wafer feeding hole 11 is closed, the vacuum pump assembly 2 is started, the vacuum chamber 1 is vacuumized, the ion beam generating device 4 is started to prefabricate the ion beam, and when the ion beam meets the specified requirement, the rotating shielding assembly 53 is separated from the upper part of the first circular plate 581;
Etching the wafer by the ion beam, and synchronously, driving the whole etching carrier 5 to rotate by the rotary driving structure 3 so as to adjust the relative angle of the ion beam to the wafer;
Meanwhile, the rotary driving assembly 54 drives the etching rotary table 58 to rotate, so that the wafer can uniformly receive ion beams, after etching is completed, the lifting driving cylinder 551 drives the lifting ring 554 to lift, the lifting ring 554 lifts the lifting ring 558, the lifting ring 558 lifts the pressing ring 557, the wafer is lifted out of the circular groove of the first circular plate 581 through the wafer ejector pin 556, the wafer after the mechanical arm is grabbed and etched is taken out of the wafer feed port 11, and then the wafer is put into the next wafer for processing in sequence, so that the whole-process automation degree is high, and the etching efficiency, stability and yield are greatly improved.
What is not described in detail in this specification is prior art known to those skilled in the art.
Although embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made therein without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.

Claims (7)

1.一种IBE离子束刻蚀装置，包括：真空室（1），所述真空室（1）上方安装真空泵组件（2），真空室（1）后壁安装离子束发生装置（4），真空室（1）左侧安装旋转驱动结构（3），真空室（1）内部转动设置刻蚀载台（5），旋转驱动结构（3）驱动连接刻蚀载台（5），真空室（1）右侧壁开设晶圆进料口（11）；1. An IBE ion beam etching device, comprising: a vacuum chamber (1), a vacuum pump assembly (2) installed above the vacuum chamber (1), an ion beam generating device (4) installed on the rear wall of the vacuum chamber (1), a rotating drive structure (3) installed on the left side of the vacuum chamber (1), an etching stage (5) rotatably arranged inside the vacuum chamber (1), the rotating drive structure (3) drivingly connected to the etching stage (5), and a wafer feeding port (11) provided on the right side wall of the vacuum chamber (1); 其特征在于：所述刻蚀载台（5）包含载台板（51），载台板（51）密封连接旋转驱动组件（54）、晶圆升降及压紧组件（55）、挡板驱动气缸（56）和感应装置（57）；The etching stage (5) is characterized in that: the etching stage (5) comprises a stage plate (51), and the stage plate (51) is sealed and connected to a rotation drive component (54), a wafer lifting and clamping component (55), a baffle drive cylinder (56) and a sensing device (57); 所述旋转驱动组件（54）驱动连接刻蚀旋转台（58）；The rotary drive assembly (54) drives and connects to the etching rotary table (58); 所述刻蚀旋转台（58）内设有循环冷却的液体流道和气体流道；The etching rotary table (58) is provided with a circulating cooling liquid flow channel and a gas flow channel; 所述旋转驱动组件（54）包含第二伺服电机（541），第二伺服电机（541）连接减速箱（542），减速箱（542）通过皮带轮结构（543）传动连接旋转柱台（544），旋转柱台（544）外套设固定台（545），固定台（545）固定密封连接载台板（51），旋转柱台（544）上端固定连接刻蚀旋转台（58），旋转柱台（544）内开设有液体流道（5441）和进气流道（5442）；The rotary drive assembly (54) comprises a second servo motor (541), the second servo motor (541) is connected to a reduction box (542), the reduction box (542) is connected to a rotating column platform (544) through a pulley structure (543), a fixed platform (545) is arranged outside the rotating column platform (544), the fixed platform (545) is fixedly and sealedly connected to the carrier plate (51), the upper end of the rotating column platform (544) is fixedly connected to the etching rotating table (58), and a liquid flow channel (5441) and an inlet flow channel (5442) are provided inside the rotating column platform (544); 所述晶圆升降及压紧组件（55）包含两个对称固定安装于载台板（51）下表面的升降驱动气缸（551），升降驱动气缸（551）设有气动伸缩端（553），伸缩端（553）上端固定连接顶升环（554）；The wafer lifting and clamping assembly (55) comprises two lifting drive cylinders (551) symmetrically fixedly mounted on the lower surface of the carrier plate (51), the lifting drive cylinders (551) being provided with pneumatic telescopic ends (553), the upper ends of the telescopic ends (553) being fixedly connected to a lifting ring (554); 所述顶升环（554）套设在固定台（545）外侧，顶升环（554）上方活动设置升降环（558），升降环（558）位于刻蚀旋转台（58）正下方，且升降环（558）上通过三根升降杆（555）固定连接压环（557），压环（557）位于刻蚀旋转台（58）正上方，且升降杆（555）滑动贯穿刻蚀旋转台（58）；The lifting ring (554) is sleeved on the outside of the fixed platform (545), and a lifting ring (558) is movably arranged above the lifting ring (554). The lifting ring (558) is located directly below the etching rotating platform (58), and the lifting ring (558) is fixedly connected to a pressure ring (557) via three lifting rods (555). The pressure ring (557) is located directly above the etching rotating platform (58), and the lifting rods (555) slide through the etching rotating platform (58); 所述升降环（558）上表面还固定设置有三根晶圆顶针（556），晶圆顶针（556）活动贯穿刻蚀旋转台（58），晶圆顶针（556）位于升降杆（555）内侧，晶圆顶针（556）和升降杆（555）均以刻蚀旋转台（58）的圆心等距分布，晶圆顶针（556）上端低于升降杆（555）；Three wafer ejector pins (556) are fixedly arranged on the upper surface of the lifting ring (558). The wafer ejector pins (556) movably penetrate the etching rotary table (58). The wafer ejector pins (556) are located on the inner side of the lifting rods (555). The wafer ejector pins (556) and the lifting rods (555) are equidistantly distributed around the center of the etching rotary table (58). The upper ends of the wafer ejector pins (556) are lower than the lifting rods (555). 所述升降环（558）上表面还安装有三个弹簧限位机构（559）；Three spring limiting mechanisms (559) are also installed on the upper surface of the lifting ring (558); 所述刻蚀旋转台（58）主要由第一圆板（581）、第二圆板（582）、第三圆板（583）和第四圆板（584）从上到下依次固定叠构而成，其中第一圆板（581）上表面开设有容纳晶圆的圆槽；The etching rotating table (58) is mainly composed of a first circular plate (581), a second circular plate (582), a third circular plate (583) and a fourth circular plate (584) which are fixedly stacked in sequence from top to bottom, wherein a circular groove for accommodating a wafer is provided on the upper surface of the first circular plate (581); 所述第一圆板（581）下表面开设有第一气体流道（5811），第二圆板（582）上表面开设有第二气体流道（5821），第一气体流道（5811）和第二气体流道（5821）构成完整的气体流道，进气流道（5442）连同第一气体流道（5811）和第二气体流道（5821），第二圆板（582）下表面开设有液体循环槽（5822），第三圆板（583）和第四圆板（584）上开设有连通液体循环槽（5822）和液体流道（5441）的液体流孔（5832），第三圆板（583）和第四圆板（584）中间还开设有连通第二气体流道（5821）和进气流道（5442）的气孔（5831）。A first gas flow channel (5811) is provided on the lower surface of the first circular plate (581), a second gas flow channel (5821) is provided on the upper surface of the second circular plate (582), the first gas flow channel (5811) and the second gas flow channel (5821) constitute a complete gas flow channel, the inlet flow channel (5442) together with the first gas flow channel (5811) and the second gas flow channel (5821), a liquid circulation groove (5822) is provided on the lower surface of the second circular plate (582), a liquid flow hole (5832) connecting the liquid circulation groove (5822) and the liquid flow channel (5441) is provided on the third circular plate (583) and the fourth circular plate (584), and a gas hole (5831) connecting the second gas flow channel (5821) and the inlet flow channel (5442) is also provided between the third circular plate (583) and the fourth circular plate (584). 2.根据权利要求1所述的一种IBE离子束刻蚀装置，其特征在于，所述旋转驱动结构（3）包含第一伺服电机（31），第一伺服电机（31）输出端连接减速机（32），减速机（32）通过齿轮结构驱动连接管套（35），管套（35）固定连接旋转法兰套（37），旋转法兰套（37）外活动套设密封套（36），密封套（36）外固定套设连接套（33），连接套（33）与真空室（1）左壁固定连接，管套（35）通过轴承与固定板转动连接连接套（33），管套（35）活动设置线管（34），线管（34）连通旋转臂（52），为旋转臂（52）提供需要的气管电线通路。2. An IBE ion beam etching device according to claim 1, characterized in that the rotary drive structure (3) comprises a first servo motor (31), the output end of the first servo motor (31) is connected to a reducer (32), the reducer (32) drives a connecting sleeve (35) through a gear structure, the sleeve (35) is fixedly connected to a rotating flange sleeve (37), a sealing sleeve (36) is movably sleeved outside the rotating flange sleeve (37), a connecting sleeve (33) is fixedly sleeved outside the sealing sleeve (36), the connecting sleeve (33) is fixedly connected to the left wall of the vacuum chamber (1), the sleeve (35) is rotatably connected to the connecting sleeve (33) with a fixed plate through a bearing, the sleeve (35) is movably provided with a wire tube (34), the wire tube (34) is connected to the rotating arm (52), and provides the rotating arm (52) with the required air pipe and wire passage. 3.根据权利要求2所述的一种IBE离子束刻蚀装置，其特征在于，所述旋转臂（52）固定连接载台板（51），旋转臂（52）上开设有连通线管（34）的线孔（521），载台板（51）下方密封连接密封箱（59）。3. An IBE ion beam etching device according to claim 2, characterized in that the rotating arm (52) is fixedly connected to the carrier plate (51), a wire hole (521) connected to the wire tube (34) is opened on the rotating arm (52), and a sealing box (59) is sealed below the carrier plate (51). 4.根据权利要求1所述的一种IBE离子束刻蚀装置，其特征在于，所述伸缩端（553）外套设波纹密封管（552），波纹密封管（552）密封固定连接顶升环（554）。4. An IBE ion beam etching device according to claim 1, characterized in that a corrugated sealing tube (552) is arranged outside the telescopic end (553), and the corrugated sealing tube (552) is sealed and fixedly connected to a lifting ring (554). 5.根据权利要求1所述的一种IBE离子束刻蚀装置，其特征在于，所述弹簧限位机构（559）包含限位导向管（5591），限位导向管（5591）固定安装在升降环（558）上表面，限位导向管（5591）内滑动设置连杆（5592），连杆（5592）上端固定连接第一圆板（581），连杆（5592）下端滑动贯穿升降环（558），连杆（5592）外套设弹簧（5593），弹簧（5593）同样位于限位导向管（5591）内，弹簧（5593）上端抵连第一圆板（581），下端抵连限位导向管（5591）底部。5. An IBE ion beam etching device according to claim 1, characterized in that the spring limiting mechanism (559) comprises a limiting guide tube (5591), the limiting guide tube (5591) is fixedly installed on the upper surface of the lifting ring (558), a connecting rod (5592) is slidably arranged in the limiting guide tube (5591), the upper end of the connecting rod (5592) is fixedly connected to the first circular plate (581), the lower end of the connecting rod (5592) slides through the lifting ring (558), a spring (5593) is arranged outside the connecting rod (5592), the spring (5593) is also located in the limiting guide tube (5591), the upper end of the spring (5593) is against the first circular plate (581), and the lower end is against the bottom of the limiting guide tube (5591). 6.根据权利要求1所述的一种IBE离子束刻蚀装置，其特征在于，所述挡板驱动气缸（56）驱动连接旋转遮挡组件（53），旋转遮挡组件（53）位于载台板（51）上方，旋转遮挡组件（53）包含一个遮挡圆板，其旋转可遮挡住刻蚀载台（5）。6. An IBE ion beam etching device according to claim 1, characterized in that the baffle driving cylinder (56) drives and connects to a rotating shielding assembly (53), the rotating shielding assembly (53) is located above the carrier plate (51), and the rotating shielding assembly (53) includes a shielding circular plate, which can rotate to shield the etching carrier (5). 7.根据权利要求1所述的一种IBE离子束刻蚀装置，其特征在于，所述感应装置（57）位于升降环（558）的一侧，升降环（558）侧面设有磁片，感应装置（57）和磁片感应连接。7. An IBE ion beam etching device according to claim 1, characterized in that the induction device (57) is located on one side of the lifting ring (558), a magnetic sheet is provided on the side of the lifting ring (558), and the induction device (57) and the magnetic sheet are inductively connected.
CN202411072440.8A 2024-08-06 2024-08-06 IBE ion beam etching device Active CN118588529B (en)

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Publication number Priority date Publication date Assignee Title
WO2019029291A1 (en) * 2017-08-10 2019-02-14 江苏鲁汶仪器有限公司 Ion beam etching system
CN115810530A (en) * 2021-09-15 2023-03-17 江苏鲁汶仪器股份有限公司 Ion beam etching machine and its lower electrode structure
TW202343656A (en) * 2022-04-20 2023-11-01 大陸商江蘇魯汶儀器股份有限公司 Wafer stage device

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