CN118251754A - Sputtering device - Google Patents

Sputtering device Download PDF

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Publication number
CN118251754A
CN118251754A CN202180104037.7A CN202180104037A CN118251754A CN 118251754 A CN118251754 A CN 118251754A CN 202180104037 A CN202180104037 A CN 202180104037A CN 118251754 A CN118251754 A CN 118251754A
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China
Prior art keywords
target
dummy electrode
sputtering
sputtering apparatus
electrode
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CN202180104037.7A
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Chinese (zh)
Inventor
安东靖典
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Nissin Electric Co Ltd
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Nissin Electric Co Ltd
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Publication of CN118251754A publication Critical patent/CN118251754A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28194—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

A sputtering apparatus that uses plasma generated by supplying high-frequency power to an antenna to sputter a target, comprising: a dummy electrode provided around the target and equipotential with the target; and an anode electrode provided so as to cover a surface of the dummy electrode facing the same direction as the sputtering surface of the target and having a ground potential.

Description

Sputtering device
Technical Field
The present invention relates to a sputtering apparatus for forming a film on a substrate by sputtering a target using plasma.
Background
As such a sputtering apparatus, as disclosed in patent document 1, there is known a sputtering apparatus in which an antenna is disposed in the vicinity of a target, and a high-frequency current is caused to flow through the antenna to generate plasma in a processing chamber. The sputtering device is configured to apply a voltage to a target and a voltage to an antenna for generating plasma, respectively, and apply a bias voltage to the target in a state where the plasma is generated, so that ions (Ar +) in the plasma collide with the target, and eject particles of a material constituting the target. Thus, a thin film can be formed on the surface of the substrate placed in the processing chamber.
Prior art literature
Patent literature
Patent document 1: japanese patent laid-open No. 2021-080533
Disclosure of Invention
Problems to be solved by the invention
In the sputtering apparatus configured to apply the voltage to the target and the voltage to the antenna for generating the plasma, respectively, as described above, the generated plasma also spreads around the target, and discharge occurs due to distortion of the electric field at the end of the target, and as a result, impurities may occur such as sputtering the backing plate holding the target. The sputtering apparatus that does not perform magnetron discharge, in which a magnetic field for trapping plasma is formed on the surface of a target, can be said to be similar to the sputtering apparatus as a whole.
In order to prevent discharge at the end of the target, the inventors studied a frame (anode electrode) in which a ground potential is set so as to cover the peripheral edge of the target as shown in fig. 6. However, in this structure, although discharge at the end of the target can be suppressed, the peripheral edge of the target is covered, and therefore, the covered region cannot be used as a sputtering material, and there is a problem that the utilization rate is lowered.
The present invention has been made to solve the above problems at one time, and its main object is to stably perform film formation by preventing discharge at the end of a target while suppressing a decrease in target utilization efficiency in a sputtering apparatus that does not perform magnetron discharge.
Technical means for solving the problems
That is, a sputtering apparatus of the present invention is a sputtering apparatus for sputtering a target using plasma generated by supplying high-frequency power to an antenna, comprising: a dummy electrode provided around the target and equipotential with the target; and an anode electrode provided so as to cover a surface of the dummy electrode facing the same direction as the sputtering surface of the target and having a ground potential.
With this configuration, since the dummy electrode having the same potential as the target is provided around the target and the anode electrode having the ground potential is provided so as to cover the dummy electrode, distortion of the electric field between the target and the dummy electrode and the anode electrode can be reduced, and plasma can be made difficult to spread therebetween. As a result, discharge between the target and the dummy electrode and the anode electrode can be prevented, and film formation can be performed stably. Further, since the surface of the dummy electrode disposed around the target is covered with the anode electrode, the decrease in the target utilization efficiency can be suppressed, and further, the generation of impurities due to sputtering the dummy electrode can be suppressed.
The sputtering apparatus is preferably such that a sputtering surface of the target and a surface of the dummy electrode are formed in substantially the same plane.
In this way, the equipotential surfaces between the target and the dummy electrode and the anode electrode can be made nearly flat, and thus the occurrence of discharge can be more effectively suppressed.
The sputtering apparatus is preferably arranged such that the dummy electrode faces the side peripheral surface of the target with a gap therebetween.
By providing a gap between the dummy electrode and the target, it is possible to prevent arcing from occurring when electrical contact between the dummy electrode and the target is not clear.
When a gap is provided between the dummy electrode and the target, an equipotential surface of distortion entering the gap is generated. As a result, the charged particles may enter the gap through the potential surface, reach the backing plate holding the target, and sputter, and thus impurities may be generated.
Therefore, when a gap is provided between the dummy electrode and the target, it is preferable that the side peripheral surface of the target and the inner peripheral surface of the dummy electrode facing the target are inclined with respect to the sputtering surface. In this way, by tilting the gap between the target and the dummy electrode with respect to the sputtering surface, charged particles that have entered the gap and reached the back plate at the bottom thereof can be reduced, and therefore sputtering of the back plate can be suppressed, and generation of impurities can be suppressed. In this case, the side peripheral surface of the target and the inner peripheral surface of the dummy electrode are preferably inclined to such an extent that the surface of the backing plate cannot be seen from the gap when the sputtering surface is viewed in plane.
Preferably, the side peripheral surface of the target and the inner peripheral surface of the dummy electrode have a tapered shape extending from the sputtering surface toward the rear surface.
In this way, even if the sputtering target is consumed, the side surface of the consumed portion having a concave shape is less likely to reach the target side peripheral surface, and the consumed portion can be used continuously to the vicinity of the target bottom surface.
If the gap between the target and the dummy electrode is too wide, the distortion of the equipotential surface increases, and thus the charged particles entering the gap increase, and there is a concern that the impurities increase due to sputtering of the backing plate. Therefore, the size of the gap between the target and the dummy electrode is preferably about 0.5mm or more and about 2.0mm or less, more preferably about 0.5mm or more and about 1.0mm or less. By setting the gap between the target and the dummy electrode to about 2.0mm or less, distortion of the equipotential surfaces can be reduced, and charged particles entering the gap can be effectively reduced.
Preferably, the inner peripheral edge of the anode electrode is located near a gap between the target and the dummy electrode when the sputtering surface is viewed in plan.
By disposing the inner peripheral edge of the anode electrode (i.e., from the dummy electrode toward the front end of the target) in the vicinity of the gap in this manner, charged particles in the vicinity of the gap can be reduced, and the charged particles can be suppressed from entering the gap, thereby effectively suppressing the generation of impurities caused by sputtering of the backing plate.
Since the equipotential surface formed by the applied voltage to the target and the generated plasma changes in the vicinity of the front end (inner peripheral edge in a partial plane view) of the anode electrode, when the inner peripheral edge of the anode electrode is disposed in the vicinity of the end of the target, ions (argon or the like) sputtered according to the shape of the anode electrode are difficult to enter the end of the target, and there is a concern that the target cannot be effectively utilized.
Therefore, the anode electrode is preferably tapered from the dummy electrode toward the target tip. In this way, the change in equipotential surfaces at the end of the target can be made gentle, whereby the change in ion density at the end of the target can be reduced, and the decrease in target utilization can be suppressed.
In the sputtering device, the anode electrode is preferably disposed so as to face the surface of the dummy electrode with a gap therebetween, and the facing surfaces of the anode electrode and the dummy electrode are preferably substantially parallel to each other.
In this way, the equipotential surfaces between the target and the dummy electrode and the anode electrode can be further made more nearly flat, and thus the occurrence of discharge can be more effectively suppressed.
If the size of the gap between the anode electrode and the dummy electrode is too large, plasma may be generated in the gap depending on the pressure and the gas type. On the other hand, if the size of the gap between the anode electrode and the dummy electrode is too small, the electric field strength may become large, and arcing may occur. Either case is an unexpected unnecessary discharge phenomenon, which is not preferable.
Therefore, the size of the gap between the anode electrode and the dummy electrode is preferably 2.0mm or more and 3.5mm or less.
ADVANTAGEOUS EFFECTS OF INVENTION
According to the present invention thus constituted, in a sputtering apparatus that does not perform magnetron discharge, it is possible to stably perform film formation while suppressing a decrease in target utilization efficiency and preventing discharge at the end of the target.
Drawings
Fig. 1 is a cross-sectional view schematically showing the structure of the sputtering apparatus according to the present embodiment, which is orthogonal to the longitudinal direction of the antenna.
Fig. 2 is a cross-sectional view schematically showing the structure in the vicinity of a target of the sputtering apparatus according to the embodiment.
Fig. 3 is a cross-sectional view illustrating the gaps among the target, the dummy electrode, and the anode electrode according to the embodiment.
Fig. 4 is a cross-sectional view schematically showing a structure in the vicinity of a target of a sputtering apparatus according to another embodiment.
Fig. 5 is a cross-sectional view perpendicular to the longitudinal direction of the antenna schematically showing the structure of a sputtering apparatus according to another embodiment.
FIG. 6 is a cross-sectional view schematically showing the structure around a target which the applicant has conceived in the process of implementing the present invention.
Detailed Description
An embodiment of the sputtering apparatus 100 according to the present invention will be described below with reference to the drawings.
Structure of device
The sputtering apparatus 100 of the present embodiment is used for forming a film on a substrate W by sputtering a target 41 using plasma P generated by supplying high-frequency power to an antenna 6. The substrate W is a substrate W for a flat panel display (FLAT PANEL DISPLAY, FPD) such as a liquid crystal display or an organic Electroluminescence (EL) display, a flexible substrate W for a flexible display, or the like.
Specifically, as shown in fig. 1, the sputtering apparatus 100 includes: a vacuum container 1 that is evacuated to form a process chamber S into which a gas G is introduced; a substrate holding unit 2 for holding a substrate W in a process chamber S; a target 41 disposed in the process chamber S; a target holding portion 3 for holding the target 41; a plurality of antennas 6 disposed in the process chamber S and having a linear shape; a target bias power supply 5 for applying a bias voltage to the target 41; an antenna 6 for generating plasma P in the process chamber S; and an antenna power supply 7 for supplying a voltage for generating plasma P to the antenna 6. By applying a high frequency from a high frequency power source to the plurality of antennas 6, a high frequency current IR flows through the plurality of antennas 6, and an induced electric field is generated in the processing chamber S, thereby generating an inductively coupled plasma P.
The vacuum vessel 1 is, for example, a metal vessel, and the inside thereof is evacuated by a vacuum evacuation device 8. The vacuum vessel 1 is in the example electrically grounded.
The sputtering gas or the reactive gas is introduced into the processing chamber S formed by the inner wall of the vacuum chamber 1 through, for example, a flow regulator (not shown) and a plurality of gas inlets 11. The sputtering gas and the reactive gas may be set to correspond to the processing contents to be performed on the substrate W. The sputtering gas is, for example, an inert gas such as argon (Ar), and the reactive gas is, for example, oxygen (O 2) or nitrogen (N 2).
The substrate holding unit 2 is a holder for holding a flat substrate W in a horizontal state in the processing chamber S.
The target holding portion 3 holds the target 41, specifically, the backing plate by bonding so as to face the substrate W held by the substrate holding portion 2. The target holding portion 3 is provided on a side wall 1a (for example, an upper side wall) forming the vacuum vessel 1. Further, an insulating portion 1b having a vacuum sealing function is provided between the target holding portion 3 and the upper side wall 1a of the vacuum chamber 1. The target holding portion 3 is cooled in a water bath by a cooling mechanism not shown, and is configured to hold and cool the target 41.
The target 41 is a flat plate having a rectangular shape in plan view, and is made of an oxide semiconductor material such as InGaZnO. The flat surface of the target 41 facing the substrate W functions as a sputtering surface 41s on which sputtering particles fly.
A target bias power supply 5 for applying a target bias voltage to the target 41 is connected to the target 41 via the target holding portion 3 in this example. The target bias voltage is a voltage at which ions in the plasma P are introduced into the target 41 and sputtered. In the present embodiment, the target bias power supply 5 is configured to apply a constant target bias voltage to the target 41.
The target bias power supply 5 is configured to be able to adjust the voltage applied to the target 41 independently of the voltage applied to the antenna 6 by the antenna power supply 7. The voltage applied to the target 41 by the target bias power supply 5 may be set to a low voltage at which ions in the plasma P are introduced into the target 41 and sputtered, and is preferably, for example, from-200V to-1 kV, but is not limited thereto.
The plurality of antennas 6 are arranged in parallel on the same plane along the surface of the substrate W (for example, substantially parallel to the surface of the substrate W) on the surface side of the substrate W in the processing chamber S. The plurality of antennas 6 are arranged at equal intervals so that their longitudinal directions are parallel to each other. The antennas 6 have the same structure in a straight line in a plan view, and have a length of several tens cm or more.
As shown in fig. 1, the antennas 6 of the present embodiment are disposed on both sides of each target 41. That is, the antennas 6 and the targets 41 are alternately arranged, and one target 41 is sandwiched between the two antennas 6. Here, the longitudinal direction of each antenna 6 is the same as the longitudinal direction of each target 41. The vicinities of both end portions of the antenna 6 penetrate through opposite side walls of the vacuum chamber 1.
The material of each antenna 6 is, for example, copper, aluminum, an alloy thereof, stainless steel, or the like, but is not limited thereto. The antenna 6 may be hollow, and a refrigerant such as cooling water may be flowed therethrough to cool the antenna 6.
Further, in each antenna 6, a portion located in the processing chamber S is covered with an insulating cover 51 made of an insulating material and having a straight pipe shape. The space between the vacuum vessel 1 and the both ends of the insulating cover 61 may not be sealed. The reason for this is that: even if the gas enters the space in the insulating cover 61, the plasma P is not generated in the space because the space is small and the migration distance of electrons is short. The material of the insulating cover 61 is, for example, quartz, alumina, fluorine resin, silicon nitride, silicon carbide, silicon, or the like, but is not limited thereto.
An antenna power supply 7 is connected to a power supply end portion, which is one end portion of the antenna 6, via a matching circuit 71, and a terminal portion, which is the other end portion, is directly grounded.
The antenna power supply 7 applies high-frequency power to the antenna 6 via the matching circuit 71. Thereby, a high-frequency current IR flows through the antenna 6, and an induced electric field is generated in the processing chamber S, thereby generating an inductively coupled plasma P. The frequency of the high frequency is preferably, for exampleBut is not limited thereto.
As described above, the antenna power supply 7 is configured to be able to adjust the voltage applied to the antenna 6 independently of the voltage applied to the target 41 by the target bias power supply 5. The power applied to the antenna 6 by the antenna power supply 7 is preferably set to a level that can generate the inductively coupled plasma P in the processing chamber S, for exampleBut is not limited thereto.
As shown in fig. 1 and 2, the sputtering apparatus 100 according to the present embodiment further includes: a dummy electrode 42 provided around the target 41 and equipotential with the target 41; and an anode electrode 43 provided so as to cover a substrate-side surface 42s (hereinafter, also referred to as a dummy sputtering surface) of the dummy electrode 42, which is oriented in the same direction as the sputtering surface 41s of the target 41, and which is at a ground potential.
The dummy electrode 42 is formed in a flat plate shape and is bonded and held to the target holding portion 3 so as to surround the periphery of the target 41 in a plan view. The dummy electrode 42 is connected to the target bias power supply 5 via the target holding portion 3, and is similarly applied with a constant target bias voltage by the target 41, thereby becoming equipotential with the target 41.
As shown in fig. 2, the dummy electrode 42 has a plate thickness substantially equal to that of the target 41. The dummy sputtering surface 42s of the dummy electrode 42 and the sputtering surface 41s of the target 41 are flat surfaces parallel to each other and formed in substantially the same plane (i.e., at the same height).
As shown in fig. 3, the dummy electrode 42 is provided so that an inner peripheral surface 42t thereof faces an outer peripheral surface 41t of the target 41 with a gap G1 (hereinafter, also referred to as a first gap). The dimension D1 of the first gap G1 is substantially constant regardless of the position of the target 41 in the plate thickness direction, and is preferably, for example, about 0.5mm or more and about 2.0mm or less, more preferably, about 0.5mm or more and about 1.0mm or less.
In the present embodiment, the outer peripheral surface 41t of the target 41 and the inner peripheral surface 42t of the dummy electrode 42 facing each other are formed to be inclined with respect to a plane including the sputtering surface 41 s. Specifically, the outer peripheral surface 41t of the target 41 and the inner peripheral surface 42t of the dummy electrode 42 are formed in a tapered shape extending from the sputtering surface 41s of the target 41 toward the rear surface side (target holding portion 3 side).
The inclination angles of the outer peripheral surface 41t of the target 41 and the inner peripheral surface 42t of the dummy electrode 42 are not particularly limited, and the inclination angles of the respective surfaces are set so that the target holding portion 3 does not protrude from the first gap G1 when the target 41 and the dummy electrode 42 are viewed from the substrate W side plane. Specifically, as shown in fig. 3, when the target 41 and the dummy electrode 42 are viewed in cross section, the inclination angles of the respective surfaces are set so that the end portion on the substrate W side of the outer peripheral surface 41t of the target 41 is located further outward than the end portion on the target holding portion 3 side of the inner peripheral surface 42t of the dummy electrode 42 in the in-plane direction parallel to the sputtering surface 41 s.
The dummy electrode 42 of the present embodiment includes the same material as the target 41 (oxide semiconductor material such as InGaZnO). The material constituting the dummy electrode 42 is not limited to this, and may include a metal material such as aluminum or stainless steel. The dummy electrode 42 may be formed by coating a substrate containing a metal material with the same material as the target 41.
The anode electrode 43 is mounted on the upper sidewall 1a of the vacuum chamber 1 so as to surround the target 41 and the dummy electrode 42, and is electrically grounded. The anode electrode 43 includes a coating portion 431, and the coating portion 431 is formed with an overcoat surface 43s that covers the dummy sputtering surface 42s of the dummy electrode 42. The cover surface 43s is annular and covers the peripheral portion or the entire periphery of the annular cover surface 43s surrounding the sputtering surface 41s in plan view. The overcoat surface 43s is formed so as to face at least the dummy sputtering surface 42s of the dummy electrode 42 with a gap G2 (hereinafter also referred to as a second gap). The overcoat surface 43s is formed substantially parallel to the sputtering surface 41s and the dummy sputtering surface 42s, and the dimension D2 of the second gap G2 is substantially constant regardless of the position in the in-plane direction along the sputtering surface 41 s. The dimension D2 of the second gap G2 is, for example, about 2.0mm or more and 3.5mm or less.
When the sputtering surface 41s of the target 41 is viewed from the substrate W side plane, the anode electrode 43 is formed such that its inner peripheral edge 43t is located in the vicinity of the first gap G1, specifically, such that its inner peripheral edge 43t is located further inside than the inner peripheral edge of the dummy sputtering surface 42s and further outside than the outer peripheral edge of the sputtering surface 41 s. When viewed from another point of view, as shown in fig. 3, the front end 43t of the coating portion 431 inward (in the direction from the dummy electrode 42 toward the target 41) is located in the vicinity of the first gap G1, specifically, located further inward than the end of the inner side of the dummy sputtering surface 42s and further outward than the end of the outer side of the sputtering surface 41s in the in-plane direction parallel to the sputtering surface 41s in cross-sectional view.
As shown in fig. 3, the coating portion 431 of the anode electrode 43 is formed so as to taper from the dummy electrode 42 toward the front end of the target 41 (the plate thickness becomes smaller). Specifically, an inclined surface 43v inclined toward the sputtering surface 41s of the target 41 is formed at an inward front end portion on the back surface 43u (surface on the substrate W side) of the cover surface 43s in the coating portion 431. The inclined surface is preferably inclined at an angle of more than 0 ° and about 30 ° or less with respect to the sputtering surface 41s, but is not particularly limited thereto. The thickness of the anode electrode 43 at the distal end 43t of the coating portion 431 is preferably not less than about 1mm and not more than about 5mm, but is not limited thereto.
Effect of the present embodiment >
According to the sputtering apparatus 100 of the present embodiment thus configured, the dummy electrode 42 having the same potential as the target 41 is provided around the target 41, and the anode electrode 43 having the ground potential is provided so as to cover the dummy electrode 42, so that distortion of the electric field between the target 41 and the dummy electrode 42 and the anode electrode 43 can be reduced, and the plasma P can be made difficult to spread therebetween. As a result, discharge between the target 41 and the dummy electrode 42 and the anode electrode 43 can be prevented, and film formation can be performed stably. Further, since the surface of the dummy electrode 42 disposed around the target 41 is covered with the anode electrode 43, the decrease in the utilization efficiency of the target 41 can be suppressed, and further, the generation of impurities due to sputtering of the dummy electrode 42 can be suppressed.
< Other variant embodiments >)
Furthermore, the present invention is not limited to the embodiments.
For example, in the sputtering apparatus 100 according to another embodiment, as shown in fig. 4, the outer peripheral surface 41t of the target 41 and the inner peripheral surface 42t of the dummy electrode 42 may be tapered so as to be narrowed toward the rear surface side (target holding portion 3 side) from the sputtering surface 41s of the target 41.
In the above embodiment, the outer peripheral surface 41t of the target 41 and the inner peripheral surface 42t of the dummy electrode 42 facing each other are inclined with respect to the plane including the sputtering surface 41s, but the present invention is not limited thereto. In another embodiment, the outer peripheral surface 41t of the target 41 and the inner peripheral surface 42t of the dummy electrode 42 may not be inclined with respect to the plane including the sputtered surface 41s, and may be formed orthogonal to the plane including the sputtered surface 41s, for example.
In the above embodiment, the coating portion 431 of the anode electrode 43 is formed so as to taper from the dummy electrode 42 toward the front end of the target 41, but the present invention is not limited thereto. In another embodiment, the coating portion 431 of the anode electrode 43 may have a certain thickness.
The sputtering apparatus 100 according to the above embodiment is a so-called internal antenna 6 type apparatus in which the antenna 6 is disposed in the process chamber S, but is not limited thereto. The sputtering apparatus 100 according to another embodiment may be a so-called external antenna 6 type apparatus in which the antenna 6 is disposed outside the process chamber S. For example, in the sputtering apparatus 100, as shown in fig. 5, a magnetic field transmission window 9 for transmitting a high-frequency magnetic field generated from the antenna 6 into the processing chamber S is formed in a side wall (for example, an upper side wall) 1a of the vacuum chamber 1, and the antenna 6 may be disposed outside the processing chamber S so as to face the magnetic field transmission window 9. The magnetic field transmission window 9 has a rectangular shape when viewed from the antenna 6 side, and may be formed such that the longitudinal direction thereof is the same as the longitudinal direction of each target 41. The magnetic field transmission window 9 may include a dielectric plate provided in such a manner as to block an opening formed in the sidewall 1a of the vacuum vessel 1. The material constituting the dielectric plate may be a known material such as ceramics, e.g., alumina, silicon carbide, and silicon nitride, inorganic materials, e.g., quartz glass and alkali-free glass, and resin materials, e.g., fluororesin (e.g., teflon).
The present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the spirit and scope of the present invention.
Industrial applicability
According to the present invention, in the sputtering apparatus 100 in which magnetron discharge is not performed, it is possible to stably perform film formation by preventing discharge at the end of the target while suppressing a decrease in the target utilization efficiency.
Description of symbols
100: Sputtering device
W: substrate board
P: plasma body
41: Target(s)
41S: sputtering surface
42: Dummy electrode
42S: surface (dummy sputtering surface)
43: Anode electrode
6: Antenna

Claims (10)

1. A sputtering apparatus that uses plasma generated by supplying high-frequency power to an antenna to sputter a target, comprising:
A dummy electrode provided around the target and equipotential with the target; and
And an anode electrode provided so as to cover a surface of the dummy electrode facing the sputtering surface of the target in the same direction and having a ground potential.
2. The sputtering apparatus of claim 1, wherein a sputtering face of the target and a surface of the dummy electrode are formed in substantially the same plane.
3. The sputtering apparatus according to claim 1 or 2, wherein the dummy electrode is provided so as to face a side peripheral surface of the target with a gap therebetween.
4. The sputtering apparatus according to claim 3, wherein a side peripheral surface of the target and an inner peripheral surface of the dummy electrode facing the side peripheral surface are inclined with respect to the sputtering surface.
5. The sputtering apparatus according to claim 4, wherein a side peripheral surface of the target and an inner peripheral surface of the dummy electrode have a tapered shape extending from the sputtering surface toward a rear surface.
6. The sputtering apparatus according to any one of claims 3 to 5, wherein a size of a gap between the target and the dummy electrode is about 0.5mm or more and about 2.0mm or less.
7. The sputtering apparatus according to any one of claims 2 to 6, wherein an inner peripheral edge of the anode electrode is located in the vicinity of a gap between the target and the dummy electrode when the sputtering surface is viewed in plan.
8. The sputtering apparatus of claim 7, wherein the anode electrode is in a shape tapering from the dummy electrode toward the target front end.
9. The sputtering apparatus according to any one of claims 1 to 8, wherein the anode electrode is disposed so as to face a surface of the dummy electrode with a gap therebetween,
The anode electrode and the dummy electrode are substantially parallel to each other on their facing surfaces.
10. The sputtering apparatus of claim 9, wherein a size of a gap between the anode electrode and the dummy electrode is about 2.0mm or more and about 3.5mm or less.
CN202180104037.7A 2021-12-14 2021-12-14 Sputtering device Pending CN118251754A (en)

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JPS5537868U (en) * 1978-09-05 1980-03-11
JPS63243269A (en) * 1987-03-30 1988-10-11 Toshiba Corp Device for fixing sputtering target
JPH0748666Y2 (en) * 1990-03-05 1995-11-08 日電アネルバ株式会社 Sputtering equipment
KR101827472B1 (en) * 2014-07-09 2018-02-08 가부시키가이샤 알박 Insulating material target
JP6916699B2 (en) * 2017-09-14 2021-08-11 株式会社Ｓｃｒｅｅｎホールディングス Film formation method and film deposition equipment
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