CN118112295B - Crimping device and testing system - Google Patents

Crimping device and testing system

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Publication number
CN118112295B
CN118112295B CN202410187843.0A CN202410187843A CN118112295B CN 118112295 B CN118112295 B CN 118112295B CN 202410187843 A CN202410187843 A CN 202410187843A CN 118112295 B CN118112295 B CN 118112295B
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CN
China
Prior art keywords
power semiconductor
assembly
crimping device
input
output
Prior art date
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CN202410187843.0A
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Chinese (zh)
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CN118112295A (en
Inventor
任春茂
周水明
王伟群
黄广龙
董冰萧
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Shenzhen Yuanlichuang Technology Co ltd
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Shenzhen Yuanlichuang Technology Co ltd
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Priority to CN202410187843.0A priority Critical patent/CN118112295B/en
Publication of CN118112295A publication Critical patent/CN118112295A/en
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Publication of CN118112295B publication Critical patent/CN118112295B/en
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02General constructional details
    • G01R1/04Housings; Supporting members; Arrangements of terminals
    • G01R1/0408Test fixtures or contact fields; Connectors or connecting adaptors; Test clips; Test sockets
    • G01R1/0416Connectors, terminals
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26Testing of individual semiconductor devices
    • G01R31/2601Apparatus or methods therefor

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)

Abstract

本发明涉及一种压接装置及测试系统,压接装置包括承载座、下压组件、输入组件及输出组件,承载座用于承载功率半导体;下压组件能够相对于承载座升降,并包括主控板及与主控板电连接的探针板,探针板能够压接于功率半导体的信号端子;输入组件能够相对于承载座升降,并包括电容及与电容电连接的输入铜排,输入铜排能够压接于功率半导体的正负极端子;输出组件能够相对于承载座升降,并包括与负载电连接的输出铜排,输出铜排能够压接于功率半导体的三相端子。输入组件和输出组件采用铜排自动压接的方式实现与功率半导体电连接,功率半导体不容易受损,从而保证测试结果的准确性,提高测试效率。

The present invention relates to a crimping device and a testing system. The crimping device includes a bearing seat, a pressing assembly, an input assembly, and an output assembly. The bearing seat is used to support a power semiconductor. The pressing assembly can be raised and lowered relative to the bearing seat and includes a main control board and a probe board electrically connected to the main control board. The probe board can be crimped to the signal terminals of the power semiconductor. The input assembly can be raised and lowered relative to the bearing seat and includes a capacitor and an input copper busbar electrically connected to the capacitor. The input copper busbar can be crimped to the positive and negative terminals of the power semiconductor. The output assembly can be raised and lowered relative to the bearing seat and includes an output copper busbar electrically connected to the load. The output copper busbar can be crimped to the three-phase terminals of the power semiconductor. The input assembly and the output assembly are electrically connected to the power semiconductor using the copper busbars for automatic crimping. The power semiconductor is not easily damaged, thereby ensuring the accuracy of the test results and improving the test efficiency.

Description

Crimping device and testing system
Technical Field
The invention relates to the technical field of power semiconductor testing, in particular to a crimping device and a testing system.
Background
In the production and processing process of power semiconductors such as IGBT modules, quality and performance tests are required to be carried out on the power semiconductors. Before testing, the power terminals of the main loop of the testing device are electrically connected with the input end and the output end of the power semiconductor in a cable locking screw mode.
However, the connection mode is easy to damage the power semiconductor, the wiring process is complicated, and a large amount of time is consumed, so that the test result and the test efficiency are affected.
Disclosure of Invention
In view of the above, it is necessary to provide a crimping device and a test system that can prevent damage to a power semiconductor and can improve test efficiency.
The invention firstly provides a crimping device which comprises a bearing seat, a pressing component, an input component and an output component, wherein the bearing seat is used for bearing a power semiconductor, the pressing component can ascend and descend relative to the bearing seat and comprises a main control board and a probe board electrically connected with the main control board, the probe board can be crimped to a signal terminal of the power semiconductor, the input component can ascend and descend relative to the bearing seat and comprises a capacitor and an input copper bar electrically connected with the capacitor, the input copper bar can be crimped to a positive terminal and a negative terminal of the power semiconductor, the output component can ascend and descend relative to the bearing seat and comprises an output copper bar electrically connected with a load, and the output copper bar can be crimped to a three-phase terminal of the power semiconductor.
In the crimping device, the power semiconductor is firstly placed on the bearing seat, then the input assembly, the output assembly and the pressing assembly are driven to descend, so that the input copper bar is crimped on the positive terminal and the negative terminal of the power semiconductor, the output copper bar is crimped on the three-phase terminal of the power semiconductor, the probe board is crimped on the signal terminal of the power semiconductor, after the capacitor is electrified, stored electric energy is applied to the power semiconductor through the input copper bar and the positive terminal and the negative terminal of the power semiconductor, the power semiconductor bears high current and high voltage under the condition of inductive load operation, the main control board controls parameters such as the switching frequency, the output current and the like of the power semiconductor through the probe board and the signal terminal, and the power semiconductor converts uncontrollable electric energy into controllable electric energy and outputs the controllable electric energy to the load through the three-phase terminal and the output copper bar. The input assembly and the output assembly can be electrically connected with the power semiconductor in an automatic copper bar crimping mode, the copper bar can bear high voltage through high current, the power semiconductor is not required to be connected in a cable locking screw mode manually, the positive terminal and the negative terminal of the power semiconductor and the three-phase terminal are not easy to damage, accuracy of test results is guaranteed, operation steps can be simplified, and test efficiency is improved.
In one embodiment, the pressing assembly further includes a driving plate and a gate plate disposed on a side of the probe plate facing away from the carrier and electrically connected to the probe plate.
So set up, can be convenient for the user dismouting or change drive plate and gate plate, prevent that the user from touching the probe of probe board to can avoid the user hand injured, also can avoid probe, drive plate or gate plate to harm.
In one embodiment, the crimping device further comprises a first driving member for driving the input assembly to lift relative to the bearing seat, and/or the crimping device further comprises a second driving member for driving the output assembly and the pressing assembly to lift together relative to the bearing seat.
The input assembly is independently driven by the first driving piece, so that the input assembly can be close to the power semiconductor, the integral structure of the crimping device is simplified, the output assembly and the pressing assembly are jointly driven by the second driving piece, the number of parts can be reduced, the integral volume of the crimping device is prevented from being increased, and energy sources can be saved.
In one embodiment, the crimping device further comprises a water channel plate arranged on the bearing seat, wherein the water channel plate is used for bearing the power semiconductor and cooling the power semiconductor.
The power semiconductor is subjected to heat dissipation and temperature reduction through the cooling liquid flowing in the water channel plate, so that the temperature of the power semiconductor can be kept in a normal working temperature range.
In one embodiment, the pressing component further comprises a pressing rod, and the pressing rod can press the power semiconductor to the bearing seat.
The pressure lever can ensure the stability of the power semiconductor in the test process, and avoid the influence of the deviation of the power semiconductor relative to the bearing seat on the test result.
In one embodiment, the number of the pressing rods is multiple, the pressing rods are arranged in one-to-one correspondence with the threaded holes of the power semiconductor, and the diameter of each pressing rod is larger than the inner diameter of each threaded hole.
The pressure lever can simulate the fastener in the testing process and fix the power semiconductor on the bearing seat, and the contact area between the pressure lever and the power semiconductor can be reduced, so that the pressure lever is ensured not to leave an indentation on the surface of the power semiconductor, and the power semiconductor is prevented from being damaged.
In one embodiment, the pressure exerted by the hold-down assembly on the power semiconductor is greater than the water pressure within the waterway board.
The arrangement ensures that the power semiconductor can be tightly attached to the edge of the water channel plate, ensures the tightness between the power semiconductor and the water channel plate and avoids the leakage of cooling liquid.
In one embodiment, the input copper bar comprises a first connecting section, a first soft copper bar and a first compression joint section which are sequentially connected, the first connecting section is electrically connected with the capacitor, the first compression joint section can be in compression joint with positive and negative terminals of the power semiconductor, the output copper bar comprises a second connecting section, a second soft copper bar and a second compression joint section which are sequentially connected, the second connecting section is electrically connected with the load, and the second compression joint section can be in compression joint with three-phase terminals of the power semiconductor.
So set up, first soft copper bar and second soft copper bar can play the cushioning effect, guarantee that power semiconductor can not damage because of the impact to still make first crimping section and second crimping section can laminate completely with power semiconductor's positive negative pole terminal and three-phase terminal.
In one embodiment, the first soft copper bar comprises a first bending section, an included angle alpha between extension lines at two ends of the first bending section is larger than or equal to 135 degrees, and/or the second soft copper bar comprises a second bending section, and an included angle beta between extension lines at two ends of the second bending section is larger than or equal to 90 degrees.
The arrangement enables the first soft copper bar and the second soft copper bar to better compensate action precision errors of the first driving piece and the second driving piece in a pressure welding state, enables contact between the first pressure welding section and the second pressure welding section and contact between the first pressure welding section and the positive electrode terminal and the negative electrode terminal of the power semiconductor and the three-phase terminal of the power semiconductor to be more stable, and enables the first soft copper bar and the second soft copper bar to be restored to an uncross welding state in time.
The invention also provides a test system comprising the crimping device.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments or the conventional techniques of the present application, the drawings required for the descriptions of the embodiments or the conventional techniques will be briefly described below, and it is apparent that the drawings in the following descriptions are only some embodiments of the present application, and other drawings may be obtained according to the drawings without inventive effort for those skilled in the art.
Fig. 1 is a schematic perspective view of a crimping apparatus according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of the crimping device of FIG. 1 in a side view;
FIG. 3 is an enlarged view of the portion A of FIG. 2 provided by the present invention;
fig. 4 is a schematic structural diagram of the input copper bar in fig. 2 in a top view according to the present invention;
fig. 5 is a schematic structural diagram of the input copper bar in fig. 4 in a side view according to the present invention;
fig. 6 is a schematic structural diagram of the output copper bar in fig. 2 in a side view according to the present invention;
fig. 7 is a schematic structural diagram of the power semiconductor in fig. 2 in a top view according to the present invention.
The device comprises the following components of 1, a bearing seat, 2, a pressing component, 21, a main control board, 22, a probe board, 23, a driving board, 24, a gate board, 25, a pressing rod, 3, an input component, 31, a capacitor, 32, an input copper bar, 321, a first connecting section, 322, a first soft copper bar, 3221, a first bending section, 323, a first compression joint section, 4, an output component, 41, an output copper bar, 411, a second connecting section, 412, a second soft copper bar, 4121, a second bending section, 413, a second compression joint section, 42, a cable, 5, a water channel board, 6, a first driving piece, 7, a second driving piece, 8, a power semiconductor, 81, a signal terminal, 82, a positive terminal, 83, a negative terminal, 84, a three-phase terminal, 85, a threaded hole and 9, and a temperature measuring piece.
Detailed Description
In order that the above objects, features and advantages of the application will be readily understood, a more particular description of the application will be rendered by reference to the appended drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present application. The present application may be embodied in many other forms than described herein and similarly modified by those skilled in the art without departing from the spirit of the application, whereby the application is not limited to the specific embodiments disclosed below.
It will be understood that when an element is referred to as being "mounted" or "disposed" on another element, it can be directly on the other element or intervening elements may also be present. When a component is considered to be "connected" to another component, it can be directly connected to the other component or intervening components may also be present. The terms "vertical", "horizontal", "upper", "lower", "left", "right" and the like are used in the description of the present application for the purpose of illustration only and do not represent the only embodiment.
Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In the description of the present application, the meaning of "plurality" means at least two, for example, two, three, etc., unless specifically defined otherwise.
In the present application, unless expressly stated or limited otherwise, a first feature "up" or "down" on a second feature may be that the first feature is in direct contact with the second feature, or that the first feature and the second feature are in indirect contact through intermedial media. Moreover, a first feature being "above," "over" and "on" a second feature may be a first feature being directly above or obliquely above the second feature, or simply indicating that the first feature is higher in level than the second feature. The first feature being "under", "below" and "beneath" the second feature may be the first feature being directly under or obliquely under the second feature, or simply indicating that the first feature is less level than the second feature.
Unless defined otherwise, all technical and scientific terms used in the specification of the present application have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used in the description of the application herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. The term "and/or" as used in the description of the present application includes any and all combinations of one or more of the associated listed items.
In the production and processing process of power semiconductors such as IGBT modules, quality and performance tests are required to be carried out on the power semiconductors. Before testing, the power terminals of the main loop of the testing device are electrically connected with the input end and the output end of the power semiconductor in a cable locking screw mode. However, the connection mode is easy to damage the power semiconductor, the wiring process is complicated, and a large amount of time is consumed, so that the test result and the test efficiency are affected.
In order to solve the above-described problems, the present invention first provides a crimping device capable of preventing damage to a power semiconductor and improving test efficiency, as shown in fig. 1 to 7.
As shown in fig. 2, the crimping device specifically includes a bearing seat 1, a pressing component 2, an input component 3 and an output component 4, wherein the bearing seat 1 is used for bearing a power semiconductor 8, the pressing component 2 can be lifted relative to the bearing seat 1 and comprises a main control board 21 and a probe board 22 electrically connected with the main control board 21, the probe board 22 can be crimped to a signal terminal 81 of the power semiconductor 8, the input component 3 can be lifted relative to the bearing seat 1 and comprises a capacitor 31 and an input copper bar 32 electrically connected with the capacitor 31, the input copper bar 32 can be crimped to a positive terminal and a negative terminal of the power semiconductor 8, the output component 4 can be lifted relative to the bearing seat 1 and comprises an output copper bar 41 electrically connected with an inductive load (not shown) such as a motor through a cable 42, and the output copper bar 41 can be crimped to a three-phase terminal 84 of the power semiconductor 8.
In the crimping device provided by the embodiment of the invention, the power semiconductor 8 is firstly placed on the bearing seat 1, then the input assembly 3, the output assembly 4 and the pressing assembly 2 are driven to descend, so that the input copper bar 32 is crimped on the positive terminal and the negative terminal of the power semiconductor 8, the output copper bar 41 is crimped on the three-phase terminal 84 of the power semiconductor 8, the probe board 22 is crimped on the signal terminal 81 of the power semiconductor 8, the capacitor 31 is used for storing electric energy and filtering, after the capacitor 31 is electrified, the stored electric energy is applied to the power semiconductor 8 through the input copper bar 32 and the positive terminal and the negative terminal of the power semiconductor 8, the power semiconductor 8 bears high current and high voltage under the condition of running with inductive load (can be active or reactive), the main control board 21 controls parameters such as the switching frequency and the output current of the power semiconductor 8 through the probe board 22 and the signal terminal 81, and the power semiconductor 8 converts uncontrollable electric energy into controllable electric energy, and then outputs the controllable electric energy to the load through the three-phase terminal 84 and the output copper bar 41. The input assembly 3 and the output assembly 4 can be electrically connected with the power semiconductor 8 in an automatic copper bar crimping mode, the positive and negative terminals of the power semiconductor 8 and the three-phase terminal 84 are not easy to damage without manual connection of a cable locking screw by a user, so that accuracy of a test result is ensured, operation steps can be simplified, testing efficiency is improved, and running operation is facilitated.
The copper bar can bear high voltage through high current, and the contact area between the copper bar and the positive and negative terminals and the three-phase terminal 84 of the power semiconductor 8 is larger, so that the crimping is more stable, the physical bearing capacity of the copper bar is stronger, the copper bar is not easy to damage in the crimping process, and the service life can be prolonged.
And, the input assembly 3 and the pressing assembly 2 are separately arranged, so that the capacitor 31 can be arranged close to the positive and negative terminals of the power semiconductor 8, so that the distance between the positive and negative electrodes of the capacitor 31 and the positive and negative terminals of the power semiconductor 8 is shortened, the stacked copper bars between the positive and negative electrodes of the capacitor 31 and the positive and negative terminals of the power semiconductor 8 can be omitted, the connection structure is simplified, the number of parts is reduced, and the accuracy of the test result is improved.
As shown in fig. 2 and 7, the power semiconductor 8 includes three-phase terminals 84, and the output copper bars 41 are arranged in a one-to-one correspondence with the three-phase terminals 84, so that each output copper bar 41 can be crimped to the corresponding three-phase terminal 84, and the three output copper bars 41 are electrically connected to the load through three cables 42, respectively. The power semiconductor 8 further includes three positive terminals 82 and three negative terminals 83, the number of the input copper bars 32 is two, the two input copper bars 32 are respectively connected with the positive electrode and the negative electrode of the capacitor 31, the input copper bars 32 connected with the positive electrode of the capacitor 31 can be press-connected to the three positive terminals 82 of the power semiconductor 8, and the input copper bars 32 connected with the negative electrode of the capacitor 31 can be press-connected to the three negative terminals 83 of the power semiconductor 8. The power semiconductor 8 is provided with a plurality of signal terminals 81 arranged at intervals on one side of the pressing component 2, and the probe card 22 is provided with a plurality of probes corresponding to the signal terminals 81 one by one on one side of the bearing seat 1, so that the probes of the probe card 22 can be pressed against the corresponding signal terminals 81.
As shown in fig. 1, the pressing assembly 2 further includes a driving plate 23 and a gate plate 24 disposed on a side of the probe card 22 facing away from the carrier 1 and electrically connected to the probe card 22. The driving board 23 turns on or off the bridge arm of the power semiconductor 8 through PWM, the conversion between DC and AC is realized by low electric control and high electricity, the gate plate 24 plays a key role in the speed of turning on and off the power semiconductor 8, in general, the larger the gate parameter is, the slower the power semiconductor is turned on speed, and vice versa. It will be appreciated that the present application cooperates with the gate plate 24 through the drive plate 23 to effect the switching on and off of the power semiconductor 8 at a certain rate. Because the input assembly 3 and the pressing assembly 2 are separately arranged, enough space is provided above the probe plate 22 to be capable of installing the driving plate 23 and the gate plate 24, so that a user can conveniently disassemble and assemble or replace the driving plate 23 and the gate plate 24, and the user is prevented from touching the probe on the side, facing the bearing seat 1, of the probe plate 22 when the driving plate 23 and the gate plate 24 are installed or disassembled, so that the hand injury of the user can be avoided, and the damage of the probe, the driving plate 23 or the gate plate 24 can also be avoided.
As shown in fig. 2 to 3, in the illustrated embodiment, the crimping apparatus further comprises a first drive 6 for driving the input assembly 3 up and down relative to the carrier 1. The driving part of the first driving piece 6 is fixed relative to the bearing seat 1, the output part of the first driving piece 6 is connected with the input assembly 3, when the output part of the first driving piece 6 drives the input assembly 3 to descend, the two input copper bars 32 are respectively pressed against the positive electrode terminal 82 and the negative electrode terminal 83 of the power semiconductor 8, and when the output part of the first driving piece 6 drives the input assembly 3 to ascend, the two input copper bars 32 are separated from the positive electrode terminal 82 and the negative electrode terminal 83 of the power semiconductor 8.
As shown in fig. 2 to 3, the crimping apparatus further includes a second driving member 7 for driving the output assembly 4 and the pressing assembly 2 to lift and lower together relative to the carrier 1. The driving part of the second driving piece 7 is fixed relative to the bearing seat 1, the output part of the second driving piece 7 is connected with the pressing component 2, the output component 4 is arranged on the pressing component 2 and can be lifted together with the pressing component 2, when the output part of the second driving piece 7 drives the pressing component 2 and the output component 4 to descend, the output copper bar 41 is pressed on the three-phase terminal 84 of the power semiconductor 8, the probe board 22 is pressed on the signal terminal 81 of the power semiconductor 8, and when the output part of the second driving piece 7 drives the pressing component 2 and the output component 4 to ascend, the output copper bar 41 is separated from the three-phase terminal 84 of the power semiconductor 8, and the probe board 22 is separated from the signal terminal 81 of the power semiconductor 8.
Wherein, the input assembly 3 is driven by the first driving member 6 alone, so that the input assembly 3 can be arranged close to the power semiconductor 8, and no other element is needed to be connected with the pressing assembly 2, thereby simplifying the whole structure of the pressing device. The output assembly 4 and the pressing assembly 2 are driven together through the second driving piece 7, so that one driving element can be omitted, the number of parts is reduced, the whole volume of the pressing device is prevented from being increased, and energy sources can be saved.
Moreover, the first driving member 6 and the second driving member 7 can be configured as a cylinder, a hydraulic cylinder, or the like, which can drive the input assembly 3, the output assembly 4, and the pressing assembly 2 to perform linear motion, and can apply a certain pressure to the input assembly 3, the output assembly 4, and the pressing assembly 2, so as to compress the power semiconductor 8 on the bearing seat 1, ensure the stability of the power semiconductor 8 in the testing process, and also ensure that the input copper bar 32 can be tightly attached to the positive electrode terminal 82 and the negative electrode terminal 83 of the power semiconductor 8, and the output copper bar 41 can be tightly attached to the three-phase terminal 84 of the power semiconductor 8.
In another embodiment, the input assembly 3, the output assembly 4 and the pressing assembly 2 may be driven to lift relative to the carrier 1 by three driving elements, or the input assembly 3, the output assembly 4 and the pressing assembly 2 may be driven to lift relative to the carrier 1 by one driving element.
As shown in fig. 2 to 3, since the power semiconductor 8 is subjected to high current and high voltage under the condition of running with inductive load, a large amount of heat is generated, and in order to ensure the accuracy and safety of the test, the crimping device further comprises a water channel plate 5 arranged on the bearing seat 1, wherein the water channel plate 5 is used for bearing the power semiconductor 8 and cooling the power semiconductor 8. The water channel plate 5 is internally provided with a cooling flow channel for cooling liquid circulation, so that the power semiconductor 8 is cooled by cooling liquid flowing in the cooling flow channel, and the temperature of the power semiconductor 8 can be kept in a normal working temperature range.
In one embodiment, a groove communicated with the cooling flow channel is formed in one side surface of the water channel plate 5, facing the pressing component 2, and cooling liquid in the cooling flow channel can flow into the groove, so that the lower surface of the power semiconductor 8 can be directly contacted with the cooling liquid, and the heat dissipation effect and heat dissipation efficiency are improved. At this time, the pressure applied by the pressing component 2 to the power semiconductor 8 is greater than the water pressure in the water channel plate 5, so that the power semiconductor 8 can be tightly attached to the edge of the groove opening of the water channel plate 5, the tightness between the power semiconductor 8 and the water channel plate 5 is ensured, and the leakage of cooling liquid is avoided. At the same time, the output copper bar 41 is also enabled to be more closely attached to the three-phase terminal 84 of the power semiconductor 8. Wherein, the pressure applied by the pressing component 2 to the power semiconductor 8 is equal to the sum of the air pressure of the second driving piece 7 and the gravity of the pressing component 2, namely, the sum of the air pressure of the second driving piece 7 and the gravity of the pressing component 2 is larger than the water pressure in the water channel plate 5.
In another embodiment, the water channel plate 5 may not be provided with a groove, and the lower surface of the power semiconductor 8 is attached to the upper surface of the water channel plate 5, so that the power semiconductor 8 is cooled by the cooling liquid flowing inside the water channel plate 5.
As shown in fig. 2 to 3, the pressing assembly 2 further includes a pressing rod 25, and the pressing rod 25 can press the power semiconductor 8 against the carrier 1. The compression bar 25 can ensure the stability of the power semiconductor 8 in the test process, and avoid the influence of the deviation of the power semiconductor 8 relative to the bearing seat 1 on the test result. Further, since the contact area between the plunger 25 and the power semiconductor 8 is small, damage to the power semiconductor 8 can also be avoided.
As shown in fig. 3 and 7, the power semiconductor 8 may be fixed with the external device through screw engagement with the threaded holes 85 by fasteners such as screws and bolts in the actual use process, and the number of the threaded holes 85 is plural, usually 8, and the plural threaded holes 85 are arranged at intervals along the circumferential direction of the power semiconductor 8, so as to ensure the stability and reliability of the connection between the power semiconductor 8 and the external device. The number of the compression bars 25 is also a plurality, and the compression bars are arranged in one-to-one correspondence with the threaded holes 85 of the power semiconductor 8, so that the power semiconductor 8 can be fixed on the bearing seat 1 by simulating a fastener in the test process. The diameter of the pressing rod 25 is greater than the inner diameter of the threaded hole 85, and the diameter of the pressing rod 25 may be 1.02-1.08 times, preferably, for example, 1.05 times, the inner diameter of the threaded hole 85. Therefore, the contact area between the pressing rod 25 and the power semiconductor 8 is reduced while the crimping effect is ensured, and the pressing rod 25 is ensured not to leave an indentation on the surface of the power semiconductor 8, so that the power semiconductor 8 is prevented from being damaged.
As shown in fig. 4 to 5, each input copper bar 32 includes a first connection section 321, a first soft copper bar 322, and a first crimp section 323 that are sequentially connected, the first connection section 321 is electrically connected to the capacitor 31, and the first crimp section 323 is capable of being crimped to the positive terminal 82 or the negative terminal 83 of the power semiconductor 8. Specifically, the number of the first soft copper bars 322 and the number of the first crimping sections 323 are three, and the three first crimping sections 323 are respectively connected with the first connecting section 321 through the three first soft copper bars 322 so as to be connected with the positive electrode or the negative electrode of the capacitor 31 through the first connecting section 321.
When the first driving member 6 drives the input assembly 3 to move downwards relative to the bearing seat 1 until the first compression joint section 323 is in contact with the positive terminal 82 or the negative terminal 83 of the power semiconductor 8, the first soft copper bar 322 deforms and plays a role in buffering, so that the positive terminal 82 or the negative terminal 83 of the power semiconductor 8 is prevented from being damaged due to impact. Moreover, the first soft copper bar 322 and the first compression joint section 323 also have a reaction force towards the positive terminal 82 or the negative terminal 83 under the action of the earth attraction, so that the first compression joint section 323 can be completely attached to the positive terminal 82 or the negative terminal 83 of the power semiconductor 8, and the phenomena of ignition, over-temperature of the copper bar, blackening and the like caused by poor contact between the first compression joint section 323 and the positive terminal 82 or the negative terminal 83 of the power semiconductor 8 due to errors in the accuracy of each time of driving the input assembly 3 by the first driving piece 6 are avoided, thereby ensuring the stability and the reliability of compression joint between the first compression joint section 323 and the positive terminal 82 or the negative terminal 83 of the power semiconductor 8, and ensuring that the power semiconductor 8 cannot be damaged in the process of bearing large current and high voltage.
As shown in fig. 5, the first soft copper bar 322 includes a first bending section 3221, and an included angle α between extension lines of two ends of the first bending section 3221 is greater than or equal to 135 °. In the non-pressure-bonded state, the included angle alpha between the extension lines of the two ends of the first bending section 3221 is larger than 135 degrees, and when the first pressure-bonding section 323 is pressure-bonded to the positive terminal 82 or the negative terminal 83 of the power semiconductor 8, the included angle alpha between the extension lines of the two ends of the first bending section 3221 tends to 135 degrees. When the first bending section 3221 meets the angle, the action precision error of the first driving piece 6 can be better compensated in the pressure welding state, so that the contact between the first pressure welding section 323 and the positive terminal 82 or the negative terminal 83 of the power semiconductor 8 is more stable, and the first bending section 3221 and the first pressure welding section 323 can be timely restored to the non-pressure welding state after the first pressure welding section 323 is separated from the positive terminal 82 or the negative terminal 83 of the power semiconductor 8.
As shown in fig. 6, each output copper bar 41 includes a second connection section 411, a second soft copper bar 412, and a second crimp section 413 connected in sequence, the second connection section 411 being electrically connected to a load, the second crimp section 413 being capable of being crimped to the three-phase terminal 84 of the power semiconductor 8. Likewise, when the second driving member 7 drives the output assembly 4 to move downwards relative to the bearing seat 1 until the second press-connection section 413 contacts the three-phase terminal 84 of the power semiconductor 8, the second soft copper bar 412 deforms and plays a role of buffering, so that the three-phase terminal 84 of the power semiconductor 8 is not damaged due to impact. And, second soft copper bar 412 and second crimping section 413 still have the reaction force towards three-phase terminal 84 under the action of earth's gravity, avoid because there is the error in the precision of second driving piece 7 every time drive output subassembly 4 action, lead to the poor contact between second crimping section 413 and the three-phase terminal 84 of power semiconductor 8, cause phenomena such as striking sparks, copper bar overtemperature, turn black to can guarantee the stability and the reliability of crimping between second crimping section 413 and the three-phase terminal 84 of power semiconductor 8, guarantee that power semiconductor 8 can not damage at the in-process that bears heavy current and high pressure.
As shown in fig. 6, the second soft copper bar 412 includes a second bending section 4121, and an included angle β between extension lines of both ends of the second bending section 4121 is greater than or equal to 90 °. In the non-pressure-bonded state, the included angle beta between the extension lines at the two ends of the second bending section 4121 is larger than 90 degrees, and when the second pressure-bonding section 413 is pressure-bonded to the three-phase terminal 84 of the power semiconductor 8, the included angle beta between the extension lines at the two ends of the second bending section 4121 tends to be 90 degrees. When the second bending section 4121 meets the angle, the action precision error of the second driving piece 7 can be better compensated in the pressure welding state, so that the contact between the second pressure welding section 413 and the three-phase terminal 84 of the power semiconductor 8 is more stable, and the second soft copper bar 412 and the second pressure welding section 413 can be timely restored to the non-pressure welding state after the second pressure welding section 413 is separated from the three-phase terminal 84 of the power semiconductor 8.
The first soft copper bar 322 and the second soft copper bar 412 may be manufactured by a copper bar process of stacking nickel sheets.
As shown in fig. 2, the crimping device further includes a temperature measuring member 9 for detecting the temperature of the input copper bar 32 or the output copper bar 41, so as to remind a user and stop the testing work when the temperature of the input copper bar 32 or the output copper bar 41 is too high, thereby ensuring the safety of the test.
The embodiment of the invention also provides a testing system which comprises the crimping device. The testing system realizes automatic crimping of the input assembly 3, the output assembly 4, the pressing assembly 2 and the power semiconductor 8 through the crimping device, so that the testing efficiency is improved, and the flow operation is convenient.
The technical features of the above-described embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above-described embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The above examples illustrate only a few embodiments of the application, which are described in detail and are not to be construed as limiting the scope of the claims. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the application, which are all within the scope of the application. Accordingly, the scope of the application should be determined from the following claims.

Claims (9)

1.一种压接装置,其特征在于,包括:1. A crimping device, comprising: 承载座(1),用于承载功率半导体(8);A supporting base (1) for supporting a power semiconductor (8); 下压组件(2),能够相对于所述承载座(1)升降,并包括主控板(21)及与所述主控板(21)电连接的探针板(22),所述探针板(22)能够压接于所述功率半导体(8)的信号端子(81);A pressing assembly (2) is capable of rising and falling relative to the supporting seat (1), and comprises a main control board (21) and a probe board (22) electrically connected to the main control board (21), wherein the probe board (22) is capable of being pressed against a signal terminal (81) of the power semiconductor (8); 输入组件(3),能够相对于所述承载座(1)升降,并包括电容(31)及与所述电容(31)电连接的输入铜排(32),所述输入铜排(32)能够压接于所述功率半导体(8)的正负极端子;以及,An input assembly (3) capable of rising and falling relative to the support seat (1) and comprising a capacitor (31) and an input copper busbar (32) electrically connected to the capacitor (31), wherein the input copper busbar (32) can be crimped to the positive and negative terminals of the power semiconductor (8); and 输出组件(4),能够相对于所述承载座(1)升降,并包括与负载电连接的输出铜排(41),所述输出铜排(41)能够压接于所述功率半导体(8)的三相端子(84);An output assembly (4) capable of rising and falling relative to the bearing seat (1) and comprising an output copper busbar (41) electrically connected to a load, wherein the output copper busbar (41) can be crimped to a three-phase terminal (84) of the power semiconductor (8); 其中,所述输入组件和所述下压组件分开布置,所述压接装置还包括用于驱动所述输入组件(3)相对于所述承载座(1)升降的第一驱动件(6),所述压接装置还包括用于驱动所述输出组件(4)及所述下压组件(2)共同相对于所述承载座(1)升降的第二驱动件(7)。The input assembly and the pressing assembly are arranged separately, the crimping device further comprises a first driving member (6) for driving the input assembly (3) to rise and fall relative to the supporting seat (1), and the crimping device further comprises a second driving member (7) for driving the output assembly (4) and the pressing assembly (2) to rise and fall relative to the supporting seat (1). 2.根据权利要求1所述的压接装置,其特征在于,所述下压组件(2)还包括设置于所述探针板(22)背离所述承载座(1)的一侧并与所述探针板(22)电连接的驱动板(23)及门极板(24)。2. The crimping device according to claim 1 is characterized in that the pressing assembly (2) further includes a driving plate (23) and a gate plate (24) arranged on a side of the probe plate (22) away from the supporting seat (1) and electrically connected to the probe plate (22). 3.根据权利要求1所述的压接装置,其特征在于,所述压接装置还包括设置于所述承载座(1)的水道板(5),所述水道板(5)用于承载所述功率半导体(8),并对所述功率半导体(8)降温。3. The crimping device according to claim 1 is characterized in that the crimping device further comprises a waterway plate (5) arranged on the supporting seat (1), and the waterway plate (5) is used to support the power semiconductor (8) and cool the power semiconductor (8). 4.根据权利要求3所述的压接装置,其特征在于,所述下压组件(2)还包括压杆(25),所述压杆(25)能够将所述功率半导体(8)压紧于所述承载座(1)。4. The crimping device according to claim 3, characterized in that the pressing assembly (2) further comprises a pressing rod (25), and the pressing rod (25) is capable of pressing the power semiconductor (8) against the supporting seat (1). 5.根据权利要求4所述的压接装置,其特征在于,所述压杆(25)的数量为多个,并与所述功率半导体(8)的螺纹孔(85)一一对应布置,所述压杆(25)的直径大于所述螺纹孔(85)的内径。5. The crimping device according to claim 4 is characterized in that there are multiple pressure rods (25) and they are arranged one-to-one corresponding to the threaded holes (85) of the power semiconductor (8), and the diameter of the pressure rod (25) is larger than the inner diameter of the threaded hole (85). 6.根据权利要求5所述的压接装置,其特征在于,所述下压组件(2)对所述功率半导体(8)施加的压力大于所述水道板(5)内的水压。6. The crimping device according to claim 5, characterized in that the pressure applied by the pressing component (2) to the power semiconductor (8) is greater than the water pressure in the waterway plate (5). 7.根据权利要求1所述的压接装置,其特征在于,所述输入铜排(32)包括依次连接的第一连接段(321)、第一软铜排(322)及第一压接段(323),所述第一连接段(321)与所述电容(31)电连接,所述第一压接段(323)能够压接于所述功率半导体(8)的正负极端子;7. The crimping device according to claim 1, characterized in that the input copper busbar (32) comprises a first connecting section (321), a first soft copper busbar (322) and a first crimping section (323) connected in sequence, the first connecting section (321) being electrically connected to the capacitor (31), and the first crimping section (323) being capable of being crimped to the positive and negative terminals of the power semiconductor (8); 所述输出铜排(41)包括依次连接的第二连接段(411)、第二软铜排(412)及第二压接段(413),所述第二连接段(411)与所述负载电连接,所述第二压接段(413)能够压接于所述功率半导体(8)的三相端子(84)。The output copper busbar (41) comprises a second connecting section (411), a second soft copper busbar (412), and a second crimping section (413) connected in sequence, the second connecting section (411) being electrically connected to the load, and the second crimping section (413) being capable of being crimped to a three-phase terminal (84) of the power semiconductor (8). 8.根据权利要求7所述的压接装置,其特征在于,所述第一软铜排(322)包括第一弯折段(3221),所述第一弯折段(3221)两端延长线之间的夹角α大于或等于135°;及/或,8. The crimping device according to claim 7, characterized in that the first soft copper busbar (322) comprises a first bending section (3221), and the angle α between the extension lines of both ends of the first bending section (3221) is greater than or equal to 135°; and/or, 所述第二软铜排(412)包括第二弯折段(4121),所述第二弯折段(4121)两端延长线之间的夹角β大于或等于90°。The second soft copper busbar (412) comprises a second bending section (4121), and the angle β between the extension lines of both ends of the second bending section (4121) is greater than or equal to 90°. 9.一种测试系统,其特征在于,包括如权利要求1-8任一项所述的压接装置。9. A testing system, comprising the crimping device according to any one of claims 1 to 8.
CN202410187843.0A 2024-02-19 2024-02-19 Crimping device and testing system Active CN118112295B (en)

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CN219574294U (en) * 2023-04-21 2023-08-22 深圳市愿力创科技有限公司 High-current crimping capacitor quick-changing device for testing high-power semiconductor module

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CN115656561A (en) * 2021-07-01 2023-01-31 全球能源互联网研究院有限公司 A crimping type IGBT sub-module test adapter and test equipment
CN219657708U (en) * 2023-03-20 2023-09-08 深圳市愿力创科技有限公司 Crimping device for power module test
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CN219320425U (en) * 2023-01-09 2023-07-07 深圳市愿力创科技有限公司 Power semiconductor module test equipment
CN219574294U (en) * 2023-04-21 2023-08-22 深圳市愿力创科技有限公司 High-current crimping capacitor quick-changing device for testing high-power semiconductor module
CN219551724U (en) * 2023-04-23 2023-08-18 深圳市愿力创科技有限公司 Temperature monitoring device of test system

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