CN117954370A - Electrostatic chuck control method, electrostatic chuck and semiconductor processing equipment - Google Patents
Electrostatic chuck control method, electrostatic chuck and semiconductor processing equipment Download PDFInfo
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- CN117954370A CN117954370A CN202410353775.0A CN202410353775A CN117954370A CN 117954370 A CN117954370 A CN 117954370A CN 202410353775 A CN202410353775 A CN 202410353775A CN 117954370 A CN117954370 A CN 117954370A
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- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000427 thin-film deposition Methods 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical group [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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Abstract
The embodiment of the application relates to the technical field of semiconductor processing, and discloses an electrostatic chuck control method, an electrostatic chuck and semiconductor processing equipment. The electrostatic chuck comprises a bias electrode and a suction electrode which are oppositely arranged, wherein the bias electrode is electrically connected with a radio frequency power supply through an adapter, the suction electrode is electrically connected with a high-voltage electrostatic power supply, and the control method of the electrostatic chuck comprises the following steps before entering an etching process stage: grounding the bias electrode by adopting a manual or automatic method; energizing the adsorption electrode to adsorb the wafer; after the adsorption electrode is electrified for a preset time, when the electromotive force of the adsorption electrode tends to be stable, the grounding of the bias electrode is disconnected; the radio frequency power supply and the adapter are turned on. The electrostatic chuck control method, the electrostatic chuck and the semiconductor processing equipment provided by the embodiment of the application can avoid the damage of the circuit element caused by the charge-discharge effect of the capacitance between the two electrodes in the electrostatic chuck, and ensure the safety of the circuit element.
Description
Technical Field
The embodiment of the application relates to the technical field of semiconductor processing, in particular to an electrostatic chuck control method, an electrostatic chuck and semiconductor processing equipment.
Background
In semiconductor processing manufacturing processes, photolithography, etching, ion implantation, thin film deposition, encapsulation, and the like are typically involved. During processing in these processes, it is often necessary to place the wafer on a chuck within a reaction chamber of a semiconductor processing apparatus and then process the wafer. The chuck plays a role in supporting and fixing the wafer, and is convenient for the processing process.
The electrostatic chuck is also called an electrostatic chuck, and is a chuck structure for fixing a wafer by using electrostatic force. Compared with the traditional mechanical chuck and the vacuum chuck, the electrostatic chuck avoids irreparable damage to the wafer caused by mechanical reasons such as pressure, collision and the like in the use process of the traditional mechanical chuck, reduces the possibility of particle pollution and increases the effective processing area of the wafer. Meanwhile, the defect that the vacuum chuck cannot be used in a low-pressure environment and cannot effectively control the temperature of a wafer is overcome. Accordingly, electrostatic chucks have been widely used in semiconductor manufacturing processes to gradually replace conventional mechanical chucks and vacuum chucks.
However, in some existing electrostatic chuck structures, when the process starts or ends, a capacitor charge-discharge effect is generated by momentarily pressurizing or depressurizing an electrode in the electrostatic chuck, and an induced current is generated by movement of electrons, so that a zero-potential state in a radio frequency circuit is damaged, and damage is caused to circuit elements.
Disclosure of Invention
An object of an embodiment of the present application is to provide an electrostatic chuck control method, an electrostatic chuck, and a semiconductor processing apparatus, capable of avoiding a charge-discharge effect of a capacitor in the electrostatic chuck and ensuring safety of a circuit element.
In order to solve the above technical problems, an embodiment of the present application provides an electrostatic chuck control method, where the electrostatic chuck includes a bias electrode and a suction electrode that are disposed opposite to each other, the bias electrode is electrically connected to a radio frequency power supply through an adapter, the suction electrode is electrically connected to a high voltage electrostatic power supply, and the electrostatic chuck control method includes, before entering an etching process stage:
Grounding the bias electrode by adopting a manual or automatic method;
Energizing the adsorption electrode to adsorb the wafer;
After the adsorption electrode is electrified for a preset time, when the electromotive force of the adsorption electrode tends to be stable, the grounding of the bias electrode is disconnected;
The radio frequency power supply and the adapter are turned on.
In addition, the embodiment of the application also provides an electrostatic chuck for realizing the electrostatic chuck control method.
In addition, the embodiment of the application also provides semiconductor processing equipment, which comprises a reaction cavity, wherein the electrostatic chuck is arranged in the reaction cavity.
According to the electrostatic chuck control method, the electrostatic chuck and the semiconductor processing equipment provided by the embodiment of the application, before entering an etching process stage, a manual or automatic method is adopted to ground the bias electrode, then the suction electrode is electrified for a period of time, the ground of the bias electrode is disconnected, and finally a radio frequency power supply is started to carry out the etching process. Therefore, the capacitor charge-discharge current generated by the instant high voltage generated when the adsorption electrode is opened is released to the ground through the grounding of the bias electrode, the damage of a circuit element caused by the capacitor charge-discharge effect between two electrodes in the electrostatic chuck is avoided, and the safety of the circuit element is ensured.
In some embodiments, after ending the etching process stage, further comprising:
Closing the radio frequency power supply and the adapter;
Grounding the bias electrode by adopting a manual or automatic method;
powering off the adsorption electrode;
And after the adsorption electrode is powered off for a preset time, the grounding of the bias electrode is disconnected when the electromotive force of the adsorption electrode is stable to zero.
In some embodiments, the line to which the bias electrode is grounded is connected in series with an electromagnetic relay that controls the switching on and off of the bias electrode ground line.
In some embodiments, two ends of an induction coil on a control circuit of the electromagnetic relay are connected in series between a high-voltage electrostatic power supply and an adsorption electrode.
In some embodiments, a first inductor is connected in series between the high-voltage electrostatic power supply and the adsorption electrode communication circuit, a second inductor is connected in series with the control circuit of the electromagnetic relay, and the first inductor controls the switch of the electromagnetic relay by inducing the second inductor.
In some embodiments, the second inductance is a variable inductance.
In some embodiments, the first inductor comprises a first end connected with the high-voltage electrostatic power supply and a second end connected with the adsorption electrode, and the length of the second inductor is adjusted according to the voltage variation value of the second end.
In some embodiments, the preset time is greater than or equal to 2 seconds.
In some embodiments, the bias electrode ground line connection locations and the chucking electrode connection high voltage electrostatic power supply line connection locations are in close proximity to one another.
Drawings
One or more embodiments are illustrated by way of example and not limitation in the figures of the accompanying drawings, in which like references indicate similar elements, and in which the figures of the drawings are not to be taken in a limiting sense, unless otherwise indicated.
FIG. 1 is a flow chart of an electrostatic chuck control method provided in some embodiments of the present application prior to entering an etching process stage;
FIG. 2 is a flow chart of an electrostatic chuck control method provided by some embodiments of the present application after an end of an etching process stage;
FIG. 3 is a schematic view of a semiconductor processing apparatus according to some embodiments of the present application;
fig. 4 is a schematic view of an electrostatic chuck grounding structure according to some embodiments of the present application.
Reference numerals illustrate: 11-an electrostatic chuck; 111-bias electrodes; 112-an adsorption electrode; 12-a radio frequency power supply; 13-a high-voltage electrostatic power supply; 14-wafer; 15-an electromagnetic relay; 151-electromagnetic relay coils; 16-a first inductance; 161-a first end; 162-second end; 17-a second inductance; an 18-adapter; 19-a source coil; a 20-plasma region; 21-reaction chamber.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present application more apparent, the following detailed description of the embodiments of the present application will be given with reference to the accompanying drawings. However, those of ordinary skill in the art will understand that in various embodiments of the present application, numerous technical details have been set forth in order to provide a better understanding of the present application. The claimed application may be practiced without these specific details and with various changes and modifications based on the following embodiments. The following embodiments are divided for convenience of description, and should not be construed as limiting the specific implementation of the present application, and the embodiments can be mutually combined and referred to without contradiction.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs; the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application; the terms "comprising" and "having" and any variations thereof in the description of the application and the claims and the description of the drawings above are intended to cover a non-exclusive inclusion.
In the description of embodiments of the present application, the technical terms "first," "second," and the like are used merely to distinguish between different objects and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated, a particular order or a primary or secondary relationship. In the description of the embodiments of the present application, the meaning of "plurality" is two or more unless explicitly defined otherwise.
In the description of the embodiments of the present application, unless explicitly specified and limited otherwise, the terms "mounted," "connected," "coupled," and the like should be construed broadly and may be, for example, fixedly connected, detachably connected, or integrally formed; or may be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communicated with the inside of two elements or the interaction relationship of the two elements. The specific meaning of the above terms in the embodiments of the present application will be understood by those of ordinary skill in the art according to specific circumstances.
There are hundreds of process steps in advanced large-scale semiconductor manufacturing processes, including photolithography, etching, ion implantation, thin film deposition, packaging, etc. In the processing of semiconductors, it is generally necessary to place a wafer on a chuck in a reaction chamber of a semiconductor processing apparatus, and then process the wafer, and the wafer needs to be transferred and inspected back and forth between up to several hundred kinds of processing apparatuses. In order to facilitate the smooth processing, the wafer must be very stably and fixedly placed on a chuck within the reaction chamber of the process tool.
Common conventional chuck structures are mechanical chucks and vacuum chucks. The mechanical chuck is a chuck structure for clamping a wafer by using mechanical force, and is generally composed of a clamping mechanism, a positioning mechanism, a sensor and other components, so that the wafer can be accurately clamped and positioned, but the wafer is easily damaged due to pressure, collision and other reasons in the use process. The vacuum chuck is a chuck structure for realizing the adsorption and clamping of objects by utilizing a vacuum principle, and is generally composed of a chuck body, a connecting pipeline, a vacuum pump, a control system and the like, and the objects to be clamped are adsorbed by generating negative pressure in the chuck body. The vacuum chuck increases the effective processing area of the wafer relative to the mechanical chuck, but has the disadvantage of not being able to effectively control the wafer temperature.
The electrostatic chuck is also called an electrostatic chuck, and is a chuck structure for adsorbing and clamping an object by utilizing an electrostatic principle, and can fix a wafer in semiconductor processing equipment. The electrostatic chuck applies a high-voltage electrostatic field to the surface of the chuck to make the surface of the clamped object carry electrostatic charge, thereby realizing adsorption by utilizing electrostatic attraction. The electrostatic chuck is typically comprised of a chuck body, a high voltage electrostatic power supply, a control system, and the like. Compared with the traditional mechanical chuck and vacuum chuck, the electrostatic chuck has the advantages of uniform clamping force, no damage to the surface of the clamped object, and the like. During semiconductor processing, the electrostatic chuck is used for avoiding irreparable damage to the wafer caused by mechanical collision, pressure and other reasons in the using process of the mechanical chuck, reducing the possibility of particle pollution, increasing the effective processing area of the wafer, and overcoming the defects that the vacuum chuck cannot be used in a low-pressure environment and cannot effectively control the temperature of the wafer. Accordingly, in the field of semiconductor processing, electrostatic chucks have increasingly replaced conventional mechanical chucks and vacuum chucks.
In some existing types of electrostatic chuck structures, the chuck body has two opposing electrodes, one being a chucking electrode that provides a coulomb force to chuck the wafer and the other being a bias electrode that provides a bias rf voltage for adjusting the etching effect. Because the adsorption electrode and the bias electrode in the electrostatic chuck are very close to each other to form a capacitor, the adsorption electrode in the electrostatic chuck can be pressurized or depressurized instantly when the process is started or ended, a capacitor charge-discharge effect can be generated between the two electrodes, and instant electronic movement changes to generate induced current, so that a zero potential state in a bias electrode circuit is damaged, damage is caused to circuit elements, and the service life of the chuck is shortened.
Therefore, in order to ensure the safety of the circuit element, some embodiments of the present application provide an electrostatic chuck control method, before entering the etching process stage, a manual or automatic method is adopted to ground the bias electrode, then the suction electrode is powered on for a period of time, the ground of the bias electrode is disconnected, and finally the rf power supply is turned on to perform the etching process. Therefore, the capacitor charge-discharge current caused by the instant high voltage generated when the adsorption electrode is opened is released to the ground through the grounding of the bias electrode, the damage of a circuit element caused by the capacitor charge-discharge effect between two electrodes in the electrostatic chuck is avoided, the instant strong current does not flow through the bias electrode circuit, and the safety of the circuit element is ensured.
The following describes a method for controlling an electrostatic chuck according to some embodiments of the present application with reference to fig. 1.
As shown in fig. 1, in some embodiments of the present application, an electrostatic chuck 11 includes a bias electrode 111 and a chuck electrode 112 that are disposed opposite to each other, the bias electrode 111 is electrically connected to a radio frequency power supply 12 through an adapter 18, the chuck electrode 112 is electrically connected to a high voltage electrostatic power supply 13, and the electrostatic chuck 11 control method includes the following steps before entering an etching process stage:
Step S11: the bias electrode 111 is grounded by a manual or automatic method;
Specifically, a manual or automatic switch is connected in series to the ground line of the bias electrode 111, and the ground line of the bias electrode 111 is controlled to be turned on or off. Before the etching process is performed, the wafer 14 to be processed is placed on the electrostatic chuck 11, and before the adsorption electrode 112 is electrified, the connection of a grounding circuit of the bias electrode 111 and the disconnection of a connecting circuit of the bias electrode 111 and the radio frequency power supply 12 are ensured, so that charge-discharge effect current generated at the moment of electrifying the adsorption electrode 112 is released to the ground through the grounding of the bias electrode 111. In the manual control, the bias electrode 111 is grounded first, and then the high-voltage electrostatic power supply 13 is turned on; in the automatic control, the high-voltage electrostatic power supply 13 is turned on first, and then the bias electrode 111 is automatically connected to the ground line by electromagnetic induction before the current reaches the attraction electrode 112.
Step S12: energizing the suction electrode 112 to suck the wafer 14;
That is, after the switch of the high-voltage electrostatic power supply 13 is turned on, the current reaches the chucking electrode 112 and charges are accumulated at the chucking electrode 112, and the wafer 14 with the heterogeneous charges is chucked.
Step S13: after the adsorption electrode 112 is electrified for a preset time, when the electromotive force of the adsorption electrode 112 tends to be stable, the grounding of the bias electrode 111 is disconnected;
At the moment of switching on the high-voltage electrostatic power supply 13, the attraction electrode 112 generates an electromotive force, and the circuit of the high-voltage electrostatic power supply 13 connected to the attraction electrode 112 generates an induced current to prevent the electromotive force of the attraction electrode 112 from increasing. The electromotive force of the adsorption electrode 112 is continuously changed within a period of time, so that an excessively high electromotive force is generated instantaneously, a capacitive charge-discharge effect is easily generated between the two electrodes, and the charge of the adsorption electrode 112 is released to the bias electrode 111. During this time, the bias electrode 111 needs to be grounded, and the charges released by the adsorption electrode 112 are introduced to the ground, so that the safety of the electrical element is ensured. After the electromotive force of the adsorption electrode 112 tends to be stable, no capacitor charge-discharge effect is generated, and the bias electrode 111 is disconnected from the ground at this time, so that subsequent processing is performed. The time required for the electromotive force to be changed from the start to the stabilization at a certain value is a preset time.
Step S14: the radio frequency power supply 12 and adapter 18 are turned on.
After the potential of the adsorption electrode 112 is stable and the bias electrode 111 is grounded and then disconnected, the radio frequency power supply 12 and the adapter 18 are started, and the adapter 18 provides a bias voltage to the electrostatic chuck 11 so that the adapter has a vertical downward driving force on plasma, the directionality of the plasma can be enhanced, the depth in the etching process can be changed, and the selective effect of the directionality in the etching can be increased.
According to the control method of the electrostatic chuck 11 provided by some embodiments of the present application, before entering an etching process stage, a manual or automatic method is adopted to ground the bias electrode 111, then the suction electrode 112 is electrified for a period of time, the ground of the bias electrode 111 is disconnected, and finally the radio frequency power supply 12 is turned on to perform the etching process. In this way, when the radio frequency power supply 12 is disconnected, the capacitor charge-discharge current caused by the instant high voltage generated when the adsorption electrode 112 is opened is released to the ground through the grounding of the bias electrode 111, so that the damage to the circuit element caused by the capacitor charge-discharge effect between the two electrodes in the electrostatic chuck 11 is avoided, and the instant strong current does not flow through the bias electrode circuit, thereby ensuring the safety of the circuit element.
As shown in fig. 2, in some embodiments of the present application, after ending the etching process stage, further comprises:
Step S15: turning off the radio frequency power supply 12 and the adapter 18;
after the etching process is finished, the circuit between the rf power source 12 and the bias electrode 111 is first turned off, so that the bias electrode 111 is turned off when the power source of the adsorption electrode 112 is turned off.
Step S16: the bias electrode 111 is grounded by a manual or automatic method;
Specifically, a manual or automatic grounding switch is connected in series to the grounding line of the bias electrode 111, and the grounding line of the bias electrode 111 is controlled to be turned on or off. Before the power supply of the bias electrode 111 is in the off state and the suction electrode 112 is powered off, the connection of the grounding circuit of the bias electrode 111 is ensured, so that the charge-discharge effect current generated at the moment of the power off of the suction electrode 112 is released to the ground through the grounding of the bias electrode 111, and the safety of circuit elements and the service life of the electrostatic chuck 11 are ensured. In the manual control, the bias electrode 111 is grounded first, and then the high-voltage electrostatic power supply 13 is turned off; in the automatic control, the high-voltage electrostatic power supply 13 is turned off first, and then the bias electrode 111 is automatically turned on by electromagnetic induction to the ground line before the attraction electrode 112 is completely powered off.
Step S17: powering down the adsorption electrode 112;
That is, when the bias electrode 111 is grounded, the power supply to the suction electrode 112 is turned off, and the suction electrode 112 circuit is instantaneously switched from high voltage to low voltage, so that a capacitive charge-discharge effect is easily generated, and the circuit element is affected.
Step S18: after the adsorption electrode 112 is powered off for a preset time, the grounding of the bias electrode 111 is disconnected when the electromotive force of the adsorption electrode 112 is stabilized to zero.
At the moment of switching off the high-voltage electrostatic power supply 13, the electromotive force of the attraction electrode 112 decreases, and the circuit connected to the high-voltage electrostatic power supply 13 and the attraction electrode 112 generates an induced current to prevent the decrease of the electromotive force of the attraction electrode 112, and the electromotive force of the attraction electrode 112 changes continuously for a while, so that too high electromotive force changes, and a capacitive charge-discharge effect is easily generated between the two electrodes of the electrostatic chuck 11, thereby releasing the charge of the attraction electrode 112 to the bias electrode 111. During this time, the bias electrode 111 needs to be grounded, and the charges released from the adsorption electrode 112 are introduced to the ground, so that the safety of the electrical element is ensured. After the electromotive force of the adsorption electrode 112 is close to zero, no capacitor charge-discharge effect is generated, and the grounding of the bias electrode 111 is disconnected at the moment, so that subsequent process is performed. The time required for the electromotive force to change from the beginning to the time of being stabilized at zero is the preset time.
As shown in fig. 3 and 4, in some embodiments of the present application, an electromagnetic relay 15 is connected in series to a line of the bias electrode 111 grounded, and the electromagnetic relay 15 controls on and off of the line of the bias electrode 111 grounded.
The electromagnetic relay 15 is an electric control device that operates using an electromagnetic principle, and is used to control switching of an electric circuit. The electromagnetic relay 15 is generally composed of an iron core, a coil, an armature, a contact reed, and the like. After a certain voltage is applied to the two ends of the coil, an electromagnetic effect is generated, and the armature can be attracted to the iron core against the tensile force of the return spring under the action of the electromagnetic force, so that the movable contact and the stationary contact of the armature are driven to be attracted. When the coil is powered off, the electromagnetic attraction force is eliminated, and the armature returns to the original position under the action of the spring, so that the movable contact and the original stationary contact are released. Thus, the purpose of conducting and cutting off the circuit is achieved by the attraction and release. The electromagnetic relay 15 automatically or manually connects the ground line, and when the bias electrode 111 is connected to the ground line with a current, the electric charge discharged from the attraction electrode 112 is introduced to the ground.
In some embodiments of the present application, two ends of an induction coil on a control circuit of the electromagnetic relay 15 are connected in series between the high-voltage electrostatic power supply 13 and the attraction electrode 112.
As shown in fig. 4, an inductor is connected in series to the circuit connecting the high-voltage electrostatic power supply 13 and the adsorption electrode 112, and this inductor coil is used as an electromagnetic relay coil 151 at the same time, and the electromagnetic relay 15 is controlled to switch by electromagnetic induction generated by the opening and closing of the circuit connecting the high-voltage electrostatic power supply 13 and the adsorption electrode 112, so as to control the connection and disconnection of the grounding line of the bias electrode 111.
Specifically, the present embodiment provides a way to automatically control the grounding of the bias electrode 111. When the high-voltage electrostatic power supply 13 is turned on, a current first passes through the induction coil of the electromagnetic relay 15, and at this time, the induction coil generates an induction magnetic field, thereby touching the switch contact of the electromagnetic relay 15, and connecting the bias electrode 111 to the ground line. Similarly, when the high-voltage electrostatic power supply 13 is turned off, the reduction of the current first affects the coil of the electromagnetic relay 15, and then touches the switch contact to turn on the ground line of the bias electrode 111. When the electromotive force of the adsorption electrode 112 is stabilized at a certain value or zero, the current in the circuit is not changed any more, the electromagnetic induction phenomenon disappears, the switch of the electromagnetic relay 15 returns to the original position under the action of the spring force, and the grounding line of the bias electrode 111 is disconnected.
The inductive effect caused by the abrupt change in current will produce a current that is opposite to the current change in the circuit, thereby counteracting the abrupt increase or decrease in current. That is, electromagnetic induction generated at the power-on instant may hinder an increase in electromotive force in the circuit, and electromagnetic induction generated at the power-off instant may hinder a decrease in electromotive force in the circuit. Therefore, at the moment when the high-voltage electrostatic power supply 13 is turned on or off, the potential of the adsorption electrode 112 is not immediately raised or lowered due to the obstruction of the inductance, but a magnetic field with huge energy is immediately generated so that the relay coil can conduct the bias electrode 111 to be grounded before the current reaches the adsorption electrode 112, thereby achieving the effect of protecting the circuit element.
An inductor is connected in series to the circuit connecting the high-voltage electrostatic power supply 13 and the adsorption electrode 112, so that the switching function of the electromagnetic relay 15 is controlled, and a certain protection function is also provided for circuit elements. The electromagnetic induction phenomenon prevents the current of the circuit from increasing or decreasing, so that the impact caused by current abrupt change can be weakened, the speed of the abrupt change of the potential of the adsorption electrode 112 can be reduced, and further the induction electric hazard generated by the abrupt change of the potential of the bias electrode 111 can be slowed down.
As shown in fig. 3, in some embodiments of the present application, a first inductor 16 is connected in series between the high-voltage electrostatic power supply 13 and the connection circuit of the adsorption electrode 112, a second inductor 17 is connected in series to the control circuit of the electromagnetic relay 15, and the first inductor 16 controls the switching of the electromagnetic relay 15 by sensing the second inductor 17.
Specifically, when the high-voltage electrostatic power supply 13 is turned on, the instantaneously changing current first passes through the induction coil of the first inductor 16, and at this time, the induction coil of the first inductor 16 generates a changing induction magnetic field, and the changing induction magnetic field in turn induces the second inductor 17 to generate a changing current, and the changing current induces the induction coil of the electromagnetic relay 15, so as to contact the switch contact of the electromagnetic relay 15, and connect the bias electrode 111 to the ground line. Similarly, when the high-voltage electrostatic power supply 13 is turned off, the reduction of the current first affects the coil of the first inductor 16, so that the second inductor 17 is induced, and the coil of the induction electromagnetic relay 15 touches the switch contact to connect the ground line of the bias electrode 111. When the electromotive force of the adsorption electrode 112 is stabilized at a certain value or zero, the current in the circuit is not changed any more, the electromagnetic induction phenomenon disappears, the switch of the electromagnetic relay 15 returns to the original position under the action of the spring force, and the grounding line of the bias electrode 111 is disconnected.
In some embodiments of the application, the second inductance 17 is a variable inductance.
When the high-voltage electrostatic power supply 13 is turned on or turned off, the electromagnetic relay 15 element is damaged when the generated instantaneous voltage change is excessive; when the voltage change is too small, abnormal disconnection of the electromagnetic relay 15 may be caused. The variable inductance is increased, and the length of the variable inductance coil is adjusted so as to prevent the relay from being damaged when the induction magnetic field is too large, and abnormal disconnection of the relay is caused when the induction magnetic field is too small.
In some embodiments of the present application, the first inductor 16 includes a first end 161 connected to the high voltage electrostatic power source 13 and a second end 162 connected to the chucking electrode 112, and the coil length of the second inductor 17 is adjusted according to the voltage variation value of the second end 162.
That is, the length of the coil of the variable inductor needs to be adjusted according to the voltage variation value at the line where the first inductor 16 is connected to the adsorption electrode 112, and when the voltage variation value is too large, that is, the induced magnetic field is too large, the length of the variable coil is reduced; when the voltage change is too small, i.e. the induced magnetic field is too small, the length of the variable coil is increased.
In some embodiments of the application, the preset time is greater than or equal to 2 seconds.
It should be noted that, when the manual control bias electrode 111 is grounded, the preset time may be controlled to be 2-5 seconds; when the electromagnetic relay 15 automatically controls the switching of the circuit, the preset time is determined according to the time required for the voltage of the adsorption electrode 112 to be stabilized at a certain value or zero after the high-voltage electrostatic power supply 13 is turned on or off, and is generally 2-5 seconds.
In some embodiments of the present application, the bias electrode 111 and the bond electrode 112 are connected to the high voltage electrostatic power supply 13 at a line connection location that is close to each other.
The position where the adsorption electrode 112 is connected to the line connection of the high-voltage electrostatic power supply 13 is the position where the electric charges are first accumulated, or the position where the electric current changes first, and the position where the ground line connection of the bias electrode 111 is close to this position, so that the electric charges generated by the charge and discharge effect of the capacitor can be introduced into the ground circuit as soon as possible.
Some embodiments of the present application further provide an electrostatic chuck for implementing the above-described method for controlling the electrostatic chuck 11.
The electrostatic chuck 11 comprises a chuck body, and a bias electrode 111 and a suction electrode 112 which are oppositely arranged in the chuck, wherein the bias electrode 111 is connected with a radio frequency power supply 12 and an adapter 18, the suction electrode 112 is connected with a high-voltage electrostatic power supply 13, and when the high-voltage electrostatic power supply 13 is turned on or off, the bias electrode 111 is grounded, so that current generated by the charge and discharge efficiency of a capacitor is led into the ground, and electric elements in a circuit are protected. The high voltage electrostatic power supply 13 may polarize the chucking electrode 112 and the wafer 14 placed on the electrostatic chuck 11, thereby generating charge accumulation, and chuck and fix the wafer 14 on the electrostatic chuck 11 by coulomb force. The rf power supply 12 applies a voltage to the bias electrode 111 to enable the bias electrode 111 to generate rf, which ionizes the gas and generates plasma. The adapter 18 provides a bias voltage to the electrostatic chuck 11 to provide a vertical downward driving force to the plasma, which can enhance the directionality of the plasma, change the depth during etching, and increase the directionality selection effect during etching.
Some embodiments of the present application further provide a semiconductor processing apparatus, including a reaction chamber 21, wherein an electrostatic chuck as described above is disposed in the reaction chamber 21.
As shown in fig. 3, such a semiconductor processing apparatus should generally include a source coil 19, a plasma 20, a reaction chamber 21, and other components necessary to perform the relevant processes in addition to the above-mentioned electrostatic chuck 11, and the reaction chamber 21 is used to place the above-mentioned electrostatic chuck 11 and provide a place for the processing. Such semiconductor processing apparatuses, including thin film deposition apparatuses, etching apparatuses, and the like, require the use of the above-described electrostatic chuck 11.
It will be understood by those of ordinary skill in the art that the foregoing embodiments are specific examples of carrying out the application and that various changes in form and details may be made therein without departing from the spirit and scope of the application.
Claims (11)
1. An electrostatic chuck control method, wherein the electrostatic chuck comprises a bias electrode and a suction electrode which are oppositely arranged, the bias electrode is electrically connected with a radio frequency power supply through an adapter, the suction electrode is electrically connected with a high-voltage electrostatic power supply, and the electrostatic chuck control method comprises the following steps before entering an etching process stage:
Grounding the bias electrode by adopting a manual or automatic method;
energizing the adsorption electrode to adsorb the wafer;
After the adsorption electrode is electrified for a preset time, when the electromotive force of the adsorption electrode tends to be stable, the grounding of the bias electrode is disconnected;
and starting the radio frequency power supply and the adapter.
2. An electrostatic chuck control method according to claim 1, further comprising, after ending the etching process stage:
closing the radio frequency power supply and the adapter;
Grounding the bias electrode by adopting a manual or automatic method;
Powering off the adsorption electrode;
And after the adsorption electrode is powered off for a preset time, the grounding of the bias electrode is disconnected when the electromotive force of the adsorption electrode is stable to zero.
3. An electrostatic chuck control method according to claim 1 or 2, wherein the bias electrode grounded line is connected in series with an electromagnetic relay which controls the switching on and off of the bias electrode grounded line.
4. The method of claim 3, wherein two ends of the induction coil on the control circuit of the electromagnetic relay are connected in series between the high-voltage electrostatic power supply and the adsorption electrode.
5. The method for controlling an electrostatic chuck according to claim 3, wherein a first inductor is connected in series between the high-voltage electrostatic power supply and the adsorption electrode communication circuit, a second inductor is connected in series to the control circuit of the electromagnetic relay, and the first inductor controls the switching of the electromagnetic relay by inducing the second inductor.
6. The method of claim 5, wherein the second inductor is a variable inductor.
7. The method of claim 6, wherein the first inductor comprises a first end connected to the high voltage electrostatic power supply and a second end connected to the chucking electrode, and wherein the second inductor length is adjusted according to a voltage variation value of the second end.
8. An electrostatic chuck control method according to claim 1 or 2, wherein the preset time is 2 seconds or longer.
9. An electrostatic chuck control method according to claim 1 or 2, wherein the bias electrode ground line wiring position and the chucking electrode connection high-voltage electrostatic power supply line wiring position are close to each other.
10. An electrostatic chuck for implementing an electrostatic chuck control method according to any one of claims 1 to 9.
11. A semiconductor processing apparatus comprising a reaction chamber, wherein an electrostatic chuck as recited in claim 10 is disposed within the reaction chamber.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101043784A (en) * | 2006-03-21 | 2007-09-26 | 显示器生产服务株式会社 | Hybrid plasma reactor |
| CN101847558A (en) * | 2009-03-27 | 2010-09-29 | 东京毅力科创株式会社 | Plasma processing apparatus and method of plasma processing |
| CN101908459A (en) * | 2008-05-21 | 2010-12-08 | 东京毅力科创株式会社 | Mounting table mechanism and plasma processing apparatus |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101043784A (en) * | 2006-03-21 | 2007-09-26 | 显示器生产服务株式会社 | Hybrid plasma reactor |
| CN101908459A (en) * | 2008-05-21 | 2010-12-08 | 东京毅力科创株式会社 | Mounting table mechanism and plasma processing apparatus |
| CN101847558A (en) * | 2009-03-27 | 2010-09-29 | 东京毅力科创株式会社 | Plasma processing apparatus and method of plasma processing |
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