CN117878077A - A single-row TPAK and microchannel double-sided heat dissipation power module device - Google Patents

A single-row TPAK and microchannel double-sided heat dissipation power module device Download PDF

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Publication number
CN117878077A
CN117878077A CN202410082094.5A CN202410082094A CN117878077A CN 117878077 A CN117878077 A CN 117878077A CN 202410082094 A CN202410082094 A CN 202410082094A CN 117878077 A CN117878077 A CN 117878077A
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China
Prior art keywords
heat dissipation
row
copper layer
tpak
base plate
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CN202410082094.5A
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Chinese (zh)
Inventor
徐加辉
田乐乐
陈文超
李志峰
欧东赢
吴瑞
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Zhejiang Cuizhan Microelectronics Co ltd
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Zhejiang Cuizhan Microelectronics Co ltd
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Priority to CN202410082094.5A priority Critical patent/CN117878077A/en
Publication of CN117878077A publication Critical patent/CN117878077A/en
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00Arrangements for thermal protection or thermal control
    • H10W40/40Arrangements for thermal protection or thermal control involving heat exchange by flowing fluids
    • H10W40/47Arrangements for thermal protection or thermal control involving heat exchange by flowing fluids by flowing liquids, e.g. forced water cooling
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00Arrangements for thermal protection or thermal control
    • H10W40/20Arrangements for cooling
    • H10W40/22Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages

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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

一种单排TPAK及微通道双面散热功率模块器件,其包括散热组件,单排模块,连接组件。所述散热组件包括散热底板,散热盖板。所述散热底板包括冷却液进出口,冷却液流道。每个所述单排模块均包括连接铜层,芯片组,第一功率端子,第二功率端子。所述连接组件包括绝缘支架,串联电极,连接电极。与现有技术相比,本发明通过在所述散热组件的两侧设置所述单排模块,并通过绝缘材料进行间隔,结构更为紧凑,使得模块整体功率提高,从而降低成本,并且双面布局整体杂散电感低,芯片均流性好。通过设置所述冷却液流道,使得冷却液在流动时均匀接触到排列在所述散热组件两侧的所述单排模块,从而令芯片降温更加均匀,保证降温效果。

A single-row TPAK and microchannel double-sided heat dissipation power module device, comprising a heat dissipation component, a single-row module, and a connection component. The heat dissipation component comprises a heat dissipation base plate and a heat dissipation cover plate. The heat dissipation base plate comprises a coolant inlet and outlet, and a coolant flow channel. Each of the single-row modules comprises a connecting copper layer, a chipset, a first power terminal, and a second power terminal. The connection component comprises an insulating bracket, a series electrode, and a connecting electrode. Compared with the prior art, the present invention arranges the single-row modules on both sides of the heat dissipation component and separates them by insulating materials, so that the structure is more compact, the overall power of the module is improved, thereby reducing the cost, and the overall stray inductance of the double-sided layout is low, and the chip has good flow uniformity. By arranging the coolant flow channel, the coolant is evenly contacted with the single-row modules arranged on both sides of the heat dissipation component when flowing, so that the chip is cooled more evenly and the cooling effect is guaranteed.

Description

Single-row TPAK and micro-channel double-sided heat dissipation power module device
Technical Field
The invention relates to the technical field of heat dissipation modules, in particular to a single-row TPAK and a micro-channel double-sided heat dissipation power module device.
Background
The TPAK package adopts a single switch module (Single Switch Module) design between a single tube and a conventional module, which not only surpasses the limitations of output current, output power, parasitic inductance and the like brought by the prior single tube package, but also reserves the flexibility of multi-tube parallel connection, and the number of the TPAK modules in parallel connection can be selected according to different inverter power output requirements.
At present, the common bottom pinfin heat dissipation mode of single TPAK is often limited in power, high-power working conditions cannot be met, double-pipe double rows can meet the high-power working conditions, but the area of a heat dissipation bottom plate is doubled, and the cost is increased. The current sharing and the noise increase of the chip are the problems to be solved, and the increase of the size also increases the difficulty of layout.
Disclosure of Invention
In view of the above, the present invention provides a single-row TPAK and micro-channel dual-sided heat dissipation power module device to solve the above technical problems.
A single-row TPAK and micro-channel double-sided heat dissipation power module device comprises a heat dissipation assembly, a plurality of single-row modules arranged on two sides of the heat dissipation assembly, and a connecting assembly arranged between the heat dissipation assembly and the single-row modules. The heat dissipation assembly comprises a heat dissipation bottom plate and a heat dissipation cover plate buckled with the heat dissipation bottom plate. The heat dissipation bottom plate comprises two cooling liquid inlets and outlets arranged at two ends of the heat dissipation bottom plate and a cooling liquid flow passage arranged on the surface of the heat dissipation bottom plate. The cooling liquid inlet and outlet are through holes formed in the radiating bottom plate. The cooling liquid flow channel is positioned between the two cooling liquid inlets and outlets. Each single-row module comprises a connecting copper layer serving as a substrate, a chip set arranged on the connecting copper layer, a first power terminal arranged at one end of the connecting copper layer, and a second power terminal arranged at the other end of the connecting copper layer. The first power terminal and the second power terminal are respectively positioned at two sides of the connecting copper layer and are connected through a Cu-Clip interconnection technology. The first power terminal is connected to the connection copper layer. The second power terminal is connected to the chipset. The connecting assembly comprises a plurality of insulating brackets arranged between the single-row modules and the heat dissipation assembly, a plurality of series electrodes connected to the single-row modules, and a plurality of connecting electrodes connected to the single-row modules. The insulating support is located between the first power terminal and the second power terminal and the heat dissipation assembly.
Further, the cooling liquid flow channel is arranged on one side of the radiating bottom plate, which faces the radiating cover plate, and one side of the radiating cover plate, which faces the radiating bottom plate.
Further, the heat dissipation bottom plate and the heat dissipation cover plate are fixed by adopting a fastener when being buckled and fixed, and are sealed by adopting sealant.
Further, the single-row module further comprises a plurality of signal terminals connected to the connecting copper layer, and a housing for enclosing the above structure.
Further, the connecting copper layer is a carrier layer for bearing the structure, and comprises an upper copper layer, a lower copper layer and a silicon nitride insulating layer which are connected through solder.
Further, the chip set is soldered on the connection copper layer by one reflow of solder.
Further, the signal terminals comprise an emitter signal terminal and a gate signal transmitting terminal, which are connected to the connecting copper layer through bonding wires.
Further, the chip set is a plurality of single-tube chips which are arranged in parallel, and comprises an IGBT chip and an FRD chip.
Compared with the prior art, the single-row TPAK and micro-channel double-sided heat dissipation power module device provided by the invention has the advantages that the single-row modules are arranged on the two sides of the heat dissipation assembly and are separated by the insulating material, and the electrode terminals are connected through the series electrodes and the connecting electrodes, so that the structure is more compact, the overall power of the module is improved, the cost is reduced, the overall stray inductance of the double-sided layout is low, and the chip uniformity is good. And through setting up insulating support is fixed single module of arranging reduces the electrical impact that creepage distance brought, improves the anti vibration ability of module. Through setting up the coolant liquid runner for the coolant liquid is in when flowing even contact arrange the cooling module both sides single module of arranging to make the chip cooling more even, guarantee the cooling effect.
Drawings
Fig. 1 is a schematic structural diagram of a single-row TPAK and micro-channel dual-sided heat dissipation power module device provided by the invention.
Fig. 2 is an exploded view of a heat dissipation assembly of the single-row TPAK and micro-channel dual-sided heat dissipation power module device of fig. 1.
Fig. 3 is an enlarged view of the single-row TPAK and micro-channel double-sided heat dissipation power module device of fig. 2 at a.
Fig. 4 is an exploded view of a single-row module of the single-row TPAK and micro-channel dual-sided heat dissipation power module device of fig. 1.
Detailed Description
Specific embodiments of the present invention are described in further detail below. It should be understood that the description herein of the embodiments of the invention is not intended to limit the scope of the invention.
Fig. 1 to fig. 4 are schematic structural diagrams of a single-row TPAK and micro-channel double-sided heat dissipation power module device according to the present invention. The single-row TPAK and micro-channel double-sided heat dissipation power module device comprises a heat dissipation assembly 10, a plurality of single-row modules 20 arranged at two sides of the heat dissipation assembly 10, and a connecting assembly 30 arranged between the heat dissipation assembly 10 and the single-row modules 20. It is conceivable that the single-row TPAK and micro-channel dual-sided heat dissipation power module device further includes other functional modules, such as seals, fasteners, etc., which are known to those skilled in the art, and will not be described herein.
The heat dissipation assembly 10 includes a heat dissipation base plate 11, and a heat dissipation cover plate 12 fastened to the heat dissipation base plate 11.
The heat dissipation base plate 11 has a structure for carrying the above functional modules, and includes two cooling liquid inlets and outlets 111 disposed at two ends of the heat dissipation base plate 11, and a cooling liquid flow channel 112 disposed on a plate surface of the heat dissipation base plate 11. The cooling liquid inlet and outlet 111 is a through hole formed on the heat dissipation base plate 11, and is used for communicating with a cooling liquid circulation system, and discharging cooling liquid into and out of the cooling liquid circulation system so as to dissipate heat of the single-row modules 20 fixed on the heat dissipation base plate 11. The cooling liquid flow channel 112 is disposed on one side of the cooling bottom plate 11 facing the cooling cover plate 12, and is a concave-convex plate disposed between the two cooling liquid inlets and outlets 111, and because the width of the cooling bottom plate 11 disposed at the cooling liquid inlet and outlet 111 is narrower, at least one flow dividing baffle is disposed at the middle section of the cooling bottom plate 11, so as to form a plurality of parallel flow channels with equal spacing, in particular, micro-channels with balanced branches, so that uniform heat dissipation is achieved, and the temperature difference between chips is reduced. Accordingly, the same cooling fluid flow channel 112 is also provided on the side of the heat dissipating cover 12 facing the heat dissipating bottom plate 11, so as to form a micro channel for the cooling fluid flow channel when the heat dissipating bottom plate 11 and the heat dissipating cover 12 are fastened to each other. Preferably, the heat dissipation bottom plate 11 and the heat dissipation cover plate 12 are fastened and fixed by using fasteners, and are sealed by using sealant, so that no overflow occurs when the cooling liquid flows.
In addition, the heat dissipation base 11 is further provided with various other functional structures, such as screw holes, sealing grooves, etc., so as to facilitate the installation and assembly of the functional modules, which can be set according to actual needs, and will not be described in detail herein.
The single-row modules 20 are TPAK modules arranged and fixed on both sides of the heat dissipation assembly 10, and each single-row module 20 includes a connection copper layer 21 as a substrate, a chipset 22 disposed on the connection copper layer 21, a first power terminal 23 disposed at one end of the connection copper layer 21, a second power terminal 24 disposed at the other end of the connection copper layer 21, a plurality of signal terminals 25 connected to the connection copper layer 21, and a housing 26 enclosing the above structures.
The connection copper layer 21 is a carrier layer for carrying the above structure, including an upper copper layer, a lower copper layer and a silicon nitride insulating layer, which are connected by solder, and the above structure is a common technology applied to the TPAK device, so it will not be described in detail here.
The chipset 22 is a plurality of single-tube chips, including IGBT chips and FRD chips, arranged in parallel, and is configured to determine positions according to the positioning holes, and solder the chips to the connection copper layer 21 through one reflow, and the installation and arrangement manner thereof is a prior art applied to the TPAK device, such as the description of the positioning fixture and the mounting method applicable to the pressure sintering of the TPAK device disclosed in the chinese application No. CN 202310533698.2.
The first power terminal 23 and the second power terminal 24 are respectively located at two sides of the connection copper layer 21 and are connected through a Cu-Clip interconnection technology, specifically, the first power terminal 23 is connected to the connection copper layer 21, and the second power terminal 24 is connected to the chipset 22, so as to be used for connecting different electrodes, and meanwhile, stray inductance can be effectively reduced by adopting a copper Clip.
The signal terminals 25 include an emitter signal terminal and a gate signal transmitting terminal, which are connected to the connection copper layer 21 by bonding wires for connecting the corresponding electrodes.
The housing 26 is a plastic material that wraps the above structure by a plastic packaging technology, so as to ensure stability of the structure, and the signal terminal is not easy to fall off.
The connection assembly 30 includes a plurality of insulating holders 31 disposed between the single-row modules 20 and the heat sink assembly 10, a plurality of series electrodes 32 connected to the single-row modules 20, and a plurality of connection electrodes 33 connected to the single-row modules 20.
The insulating holder 31 is a pad made of insulating material and is located between the first and second power terminals 23 and 24 and the heat sink 10 to improve electrical safety. In addition, the insulating support 31 is further provided with various other functional structures, such as a partition board for separating two adjacent single-row modules 20, and a screw-connection column for inserting fasteners, etc., so as to complete the installation and assembly of the functional modules, which can be set according to actual needs, and will not be described in detail herein.
The serial electrode 32 and the connection electrode 33 are made of conductive materials for simultaneously connecting the single-row modules 20 located at both sides of the heat dissipation assembly 10. It is conceivable that when two adjacent single-row modules 20 on the same side need to be connected in series, the two single-row modules 20 are placed in opposite directions, specifically, the first power terminals 23 and the second power terminals 24 of the two single-row modules 20 are located on different sides, so that the series electrode 32 can be connected to the first power terminals 23 and the second power terminals 24 of the two single-row modules 20 at the same time, and two connection electrodes 33 are further provided to connect the first power terminals 23 and the second power terminals 24 on the other side, respectively, thereby realizing connection of multiple groups of single-row modules 20. In addition, in actual production, the number of terminals connected to each of the serial electrodes 32 and the connection electrodes 33 may be flexibly adjusted according to the single-row modules 20 to be provided, so as to be suitable for different products. Through the connection of upper and lower module terminal for construct into positive negative pole, three-phase terminal, thereby improve the current sharing, and reduce stray inductance, make overall structure compact, and then the cost is reduced.
Compared with the prior art, the single-row TPAK and micro-channel double-sided heat dissipation power module device provided by the invention has the advantages that the single-row modules 20 are arranged on two sides of the heat dissipation assembly 10 and are separated by insulating materials, and the serial electrodes 32 and the connecting electrodes 33 are connected with electrode terminals, so that the structure is more compact, the overall power of the module is improved, the cost is reduced, the overall stray inductance of double-sided layout is low, and the chip uniformity is good. And by arranging the insulating support 31 to fix the single-row modules 20, the electric influence caused by the creepage distance is reduced, and the vibration resistance of the modules is improved. By arranging the cooling liquid flow channels 112, the cooling liquid is enabled to be in uniform contact with the single-row modules 20 arranged on two sides of the heat dissipation assembly 10 when flowing, so that the cooling of the chip is more uniform, and the cooling effect is ensured.
The above is only a preferred embodiment of the present invention and is not intended to limit the scope of the present invention, and any modifications, equivalent substitutions or improvements within the spirit of the present invention are intended to be covered by the claims of the present invention.

Claims (8)

1.一种单排TPAK及微通道双面散热功率模块器件,其特征在于:所述单排TPAK及微通道双面散热功率模块器件包括一个散热组件,多个设置在所述散热组件两侧的单排模块,以及一个设置在所述散热组件和单排模块之间的连接组件,所述散热组件包括一个散热底板,以及一个与所述散热底板相互扣合的散热盖板,所述散热底板包括两个设置在所述散热底板两端的冷却液进出口,以及一个设置在所述散热底板的板面上的冷却液流道,所述冷却液进出口为开设在所述散热底板上的通孔,所述冷却液流道位于两个所述冷却液进出口之间,每个所述单排模块均包括一个作为基板的连接铜层,一个设置在所述连接铜层上的芯片组,一个设置在所述连接铜层一端的第一功率端子,以及一个设置在所述连接铜层另一端的第二功率端子,所述第一功率端子与第二功率端子分别位于所述连接铜层的两侧,并通过Cu-Clip互连技术进行连接,所述第一功率端子连接在所述连接铜层上,所述第二功率端子连接在所述芯片组上,所述连接组件包括多个设置在所述单排模块与所述散热组件之间的绝缘支架,多个连接在所述单排模块上的串联电极,以及多个连接在所述单排模块上的连接电极,所述绝缘支架位于所述第一功率端子和第二功率端子与所述散热组件之间。1. A single-row TPAK and microchannel double-sided heat dissipation power module device, characterized in that: the single-row TPAK and microchannel double-sided heat dissipation power module device includes a heat dissipation component, a plurality of single-row modules arranged on both sides of the heat dissipation component, and a connecting component arranged between the heat dissipation component and the single-row modules, the heat dissipation component includes a heat dissipation base plate, and a heat dissipation cover plate interlocked with the heat dissipation base plate, the heat dissipation base plate includes two coolant inlets and outlets arranged at both ends of the heat dissipation base plate, and a coolant flow channel arranged on the board surface of the heat dissipation base plate, the coolant inlet and outlet are through holes opened on the heat dissipation base plate, the coolant flow channel is located between the two coolant inlets and outlets, and each of the single-row modules includes a substrate A connecting copper layer, a chipset arranged on the connecting copper layer, a first power terminal arranged at one end of the connecting copper layer, and a second power terminal arranged at the other end of the connecting copper layer, the first power terminal and the second power terminal are respectively located on both sides of the connecting copper layer and are connected by Cu-Clip interconnection technology, the first power terminal is connected to the connecting copper layer, the second power terminal is connected to the chipset, the connecting component includes a plurality of insulating brackets arranged between the single-row module and the heat dissipation component, a plurality of series electrodes connected to the single-row module, and a plurality of connecting electrodes connected to the single-row module, the insulating bracket is located between the first power terminal and the second power terminal and the heat dissipation component. 2.如权利要求1所述的单排TPAK及微通道双面散热功率模块器件,其特征在于:所述冷却液流道设置在所述散热底板的朝向所述散热盖板的一侧,以及所述散热盖板的朝向所述散热底板的一侧。2. The single-row TPAK and microchannel double-sided heat dissipation power module device according to claim 1, characterized in that: the coolant flow channel is arranged on a side of the heat dissipation base plate facing the heat dissipation cover plate, and on a side of the heat dissipation cover plate facing the heat dissipation base plate. 3.如权利要求1所述的单排TPAK及微通道双面散热功率模块器件,其特征在于:所述散热底板与散热盖板在扣合并固定时采用紧固件进行固定,采用密封胶进行密封。3. The single-row TPAK and microchannel double-sided heat dissipation power module device according to claim 1, characterized in that the heat dissipation base plate and the heat dissipation cover plate are fixed by fasteners when they are buckled and fixed, and are sealed by sealant. 4.如权利要求1所述的单排TPAK及微通道双面散热功率模块器件,其特征在于:所述单排模块还包括多个连接在所述连接铜层上的信号端子,以及一个将上述结构包裹在内的外壳。4. The single-row TPAK and microchannel double-sided heat dissipation power module device as described in claim 1, characterized in that: the single-row module also includes a plurality of signal terminals connected to the connecting copper layer, and a shell that wraps the above structure. 5.如权利要求1所述的单排TPAK及微通道双面散热功率模块器件,其特征在于:所述连接铜层为一个用于承载上述结构的载体层,包括通过焊料连接的上铜层、下铜层以及氮化硅绝缘层。5. The single-row TPAK and microchannel double-sided heat dissipation power module device as described in claim 1, characterized in that: the connecting copper layer is a carrier layer for carrying the above structure, including an upper copper layer, a lower copper layer and a silicon nitride insulating layer connected by solder. 6.如权利要求1所述的单排TPAK及微通道双面散热功率模块器件,其特征在于:所述芯片组通过焊料一次回流,焊接在所述连接铜层上。6. The single-row TPAK and microchannel double-sided heat dissipation power module device as claimed in claim 1, characterized in that: the chipset is soldered on the connecting copper layer by a single solder reflow. 7.如权利要求4所述的单排TPAK及微通道双面散热功率模块器件,其特征在于:所述信号端子包括发射极信号端子以及门极信号发射端子,均通过键合线连接在所述连接铜层上。7. The single-row TPAK and microchannel double-sided heat dissipation power module device according to claim 4, characterized in that: the signal terminal includes an emitter signal terminal and a gate signal emitter terminal, both of which are connected to the connecting copper layer through bonding wires. 8.如权利要求1所述的单排TPAK及微通道双面散热功率模块器件,其特征在于:所述芯片组为多个并联设置的单管芯片,包括IGBT芯片和FRD芯片。8. The single-row TPAK and microchannel double-sided heat dissipation power module device according to claim 1, characterized in that: the chipset is a plurality of single-tube chips arranged in parallel, including an IGBT chip and an FRD chip.
CN202410082094.5A 2024-01-19 2024-01-19 A single-row TPAK and microchannel double-sided heat dissipation power module device Pending CN117878077A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118471965A (en) * 2024-07-12 2024-08-09 浙江翠展微电子有限公司 TPAK packaging structure with four parallel layout of silicon carbide chips
CN118508723A (en) * 2024-07-17 2024-08-16 浙江翠展微电子有限公司 TPAK double-tube double-row integrated power module
CN118693023A (en) * 2024-08-27 2024-09-24 浙江翠展微电子有限公司 A power module with a packaging structure capable of improving heat dissipation capability

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118471965A (en) * 2024-07-12 2024-08-09 浙江翠展微电子有限公司 TPAK packaging structure with four parallel layout of silicon carbide chips
CN118508723A (en) * 2024-07-17 2024-08-16 浙江翠展微电子有限公司 TPAK double-tube double-row integrated power module
CN118693023A (en) * 2024-08-27 2024-09-24 浙江翠展微电子有限公司 A power module with a packaging structure capable of improving heat dissipation capability

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