CN117855162B - A direct liquid cooling structure for a wavy SiC device with a secondary flow channel - Google Patents
A direct liquid cooling structure for a wavy SiC device with a secondary flow channel Download PDFInfo
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- CN117855162B CN117855162B CN202311729662.8A CN202311729662A CN117855162B CN 117855162 B CN117855162 B CN 117855162B CN 202311729662 A CN202311729662 A CN 202311729662A CN 117855162 B CN117855162 B CN 117855162B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W40/00—Arrangements for thermal protection or thermal control
- H10W40/20—Arrangements for cooling
- H10W40/22—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections
- H10W40/226—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections characterised by projecting parts, e.g. fins to increase surface area
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W40/00—Arrangements for thermal protection or thermal control
- H10W40/40—Arrangements for thermal protection or thermal control involving heat exchange by flowing fluids
- H10W40/47—Arrangements for thermal protection or thermal control involving heat exchange by flowing fluids by flowing liquids, e.g. forced water cooling
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Abstract
The invention belongs to the technical field of heat dissipation structures, and discloses a wave-shaped SiC device direct liquid cooling heat dissipation structure with a secondary flow channel, which comprises a substrate, a fin structure, a lower cooling plate and a power semiconductor module, wherein the lower cooling plate is arranged on the substrate; the upper part of the base plate is welded with the power semiconductor module, the fin structure is positioned below the base plate, and the lower cold plate is connected with the base plate in a sealing way. The invention focuses on the innovation of the heat dissipation structure, and realizes the improvement of the liquid cooling heat exchange performance with lower pumping power on the premise of ensuring the commercial application of simplicity, high efficiency and easiness in processing. The fin structure of the invention is in a wave form along the flowing direction, and introduces the secondary flowing channels in a staggered discontinuous arrangement mode, so that the flowing mixing of flowing working media among the main flowing channels is promoted, dean vortex is formed among the fins to destroy the flowing boundary layer, and the heat exchange efficiency is further improved. Compared with the traditional heat dissipation structure, the invention can enhance the internal disturbance of the fluid without obviously increasing the pressure drop loss of the fluid, and can keep a higher heat exchange coefficient in the whole flow area.
Description
Technical Field
The invention belongs to the technical field of heat dissipation structures, relates to an efficient cooling technology suitable for high-heat-flux power electronic devices, and particularly relates to a wave-shaped SiC device direct liquid cooling heat dissipation structure with a secondary flow channel.
Background
At present, with the widespread use of electrified vehicles, power electronic converters are being developed toward miniaturization, weight saving, and high reliability. The conventional Si module can not meet the future development demand, and the SiC power semiconductor has great potential solution for improving the power density and reliability index of the converter by virtue of the superior performance advantage. However, due to the reduction of chip area and package size, the heat flux of SiC chips is generally much greater than that of Si chips under the same loss conditions, which is more likely to cause heat concentration problems, increasing the difficulty of heat dissipation of the module. Unreasonable heat dissipation designs can cause excessive chip junction temperatures, resulting in reduced reliability of the power module. In order to address the rigors of thermal management challenges, direct liquid cooling schemes with greater heat dissipation efficiency are of great interest. Compared with indirect liquid cooling, the direct liquid cooling technology can eliminate the heat transfer paths of the heat conduction silicone grease layer of the power module and the surface of the radiator, so that the junction thermal resistance is reduced by 20% -30%. The direct liquid cooling technology is the most effective thermal management mode of the SiC power module at present, and is also the main stream commercial product scheme aiming at the application occasion of high power density. Because the direct liquid cooling heat dissipation structure has remarkable influence on key parameters such as heat exchange efficiency, fluid pressure drop and the like, the design of the efficient heat dissipation structure under the condition of limited volume and weight has important research value.
Common direct liquid cooling structures for SiC power modules include integrated Pin-Fin, micro-channels, jet impingement, and the like. Among them, the micro-channel and jet impingement structure has limited application range due to high pumping power requirements and potential risk of clogging. The integrated Pin-Fin is widely applied to commercial vehicle-mounted power modules by virtue of the advantages of simple structure, low processing cost and the like, and the disturbance to a fluid is enhanced by adopting a Fin staggered arrangement mode, so that the integrated Pin-Fin has better heat exchange performance than a conventional heat dissipation structure, and meanwhile, the overall flow pressure drop loss is increased. The simple, efficient and easily-processed direct liquid cooling structure is always a target pursued by a commercial power module, the existing integrated Pin-Fin heat dissipation structure has the defects of poor temperature balance and large flow pressure drop, and the efficient direct liquid cooling heat dissipation structure design is particularly important in order to realize the improvement of liquid cooling heat exchange performance under lower pumping power.
Through the above analysis, the problems and defects existing in the prior art are as follows:
the existing direct liquid cooling structure comprising integrated Pin-Fin, micro-channel, jet impact and the like has the defects of high pumping power requirement, poor temperature balance and the like.
Disclosure of Invention
Aiming at the problems existing in the prior art, the invention provides a wave-shaped SiC device direct liquid cooling heat radiation structure with a secondary flow channel, which is a simple and efficient novel heat radiation structure scheme and can realize the improvement of liquid cooling heat exchange performance with lower pumping power.
The invention discloses a wave-shaped SiC device direct liquid cooling heat dissipation structure with a secondary flow channel, which comprises a substrate, a fin structure, a lower cold plate and a power semiconductor module, wherein the upper part of the substrate is welded with the power semiconductor module, the fin structure is positioned below the substrate, and the lower cold plate is connected with the substrate in a sealing way.
Further, the fin structure is integrated with the base plate and manufactured by integral molding.
Further, the cross section of the fin structure is trapezoid, parallelogram or mixture of curved sides and quadrilaterals, and the fin structure is staggered with each other and is in a discontinuous arrangement mode.
Further, the fin structures form crisscross flow channels, the width of the longitudinally arranged main flow channels is larger, the width of the transversely arranged secondary flow channels is smaller, and the secondary flow channels are communicated with the main flow channels along the flow direction at a split angle smaller than 90 degrees.
Further, the lower cold plate is provided with a sealing notch, and the base plate can be tightly mounted on the lower cold plate through bolts and sealing washers.
Furthermore, the lower cooling plate adopts parallel waterway arrangement, and independent mounting notches are arranged at the positions of each power semiconductor module, namely a water inlet, an inlet channel, an outlet channel and a water outlet.
Further, the number of lower cold plate parallel water paths is consistent with the number of power semiconductor modules for cooling.
Further, the inlet channel section of the lower cold plate adopts a gradually expanding shape, including but not limited to a trapezoid shape and a parabolic shape, and the width of the outlet channel is larger at a position far away from the water inlet, and the outlet channel is in a gradually reducing shape.
Further, the fin structure is in a wavy arrangement form along the flowing direction, and the channel number, turning times and fluctuation amplitude structural parameters of the fin structure can be changed according to application requirements.
Further, the substrate and fin structures are fabricated from thermally conductive metallic materials including, but not limited to, copper, aluminum silicon carbide.
In combination with the technical scheme and the technical problems to be solved, the technical scheme to be protected has the following advantages and positive effects:
Firstly, the invention discards the traditional schemes of the existing direct liquid cooling structure including integrated Pin-Fin, micro-channel, jet impact and the like, focuses on the innovation of the heat dissipation structure, and realizes the improvement of the liquid cooling heat exchange performance with lower pumping power on the premise of ensuring the commercial application of simplicity, high efficiency and easy processing.
Secondly, the invention adopts a wave-shaped fin arrangement mode, which can effectively inhibit the growth of a thermal boundary layer, thereby maintaining a higher heat exchange coefficient in the whole flow area. The secondary flow channels are introduced to promote the flow mixing of the flowing working medium among the main flow channels, and dean vortex is formed among the fins, so that the enhancement of the internal disturbance of the fluid is realized, and the heat exchange is enhanced. The design structure is simple, the processing cost is low, and the method is very suitable for large-scale industrial application. And is superior to the conventional direct liquid cooling radiator in heat exchange performance, flow pressure drop, temperature equalization and the like.
Thirdly, the invention provides a novel direct liquid cooling heat dissipation structure suitable for a power semiconductor module, wherein the fin structure is in a wave-shaped form along the flowing direction, and a staggered discontinuous arrangement mode is adopted to introduce secondary flowing channels, so that flowing mixing of flowing working media among main flowing channels is promoted, dean vortex is formed among fins to destroy a flowing boundary layer, and heat exchange efficiency is further improved. Compared with the traditional heat dissipation structure, the structure proposal does not obviously increase the pressure drop loss of the fluid while enhancing the internal disturbance of the fluid, can keep higher heat exchange coefficient in the whole flow area, and overcomes the technical prejudice.
Drawings
FIG. 1 is a perspective view of a direct liquid-cooled heat sink structure provided by an embodiment of the present invention;
FIG. 2 is a schematic diagram of a substrate and fins of a direct liquid-cooled heat dissipation structure according to an embodiment of the present invention;
FIG. 3 is a top view of a substrate and fins of a direct liquid-cooled heat sink structure according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of a lower cold plate of a direct liquid cooling heat dissipation structure according to an embodiment of the present invention;
FIG. 5 is a top view of a cold plate of a direct liquid-cooled heat dissipating structure according to an embodiment of the present invention;
FIG. 6 is a flow diagram of a CFD simulation of a direct liquid-cooled heat dissipation structure provided by an embodiment of the present invention;
FIG. 7 is a graph comparing the performance of the direct liquid cooling heat dissipation structure provided by the embodiment of the invention with that of commercial Pin-Fin;
FIG. 8 is a schematic diagram of a local dense arrangement of fins of a direct liquid-cooled heat dissipation structure provided by an embodiment of the present invention;
Fig. 9 is a schematic diagram of an arc fin of a direct liquid cooling heat dissipation structure according to an embodiment of the present invention.
In the figure, 1, a substrate; 2, fin structure, 3, lower cold plate, 4, power semiconductor module, 21, cross section shape, 22, main runner, 23, secondary runner, 31, water inlet, 32, inlet channel, 33, waterway, 34, outlet channel, 35, water outlet.
Detailed Description
The present invention will be described in further detail with reference to the following examples in order to make the objects, technical solutions and advantages of the present invention more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
As shown in fig. 1, the wave-shaped SiC device direct liquid cooling heat dissipation structure with the secondary flow channel comprises a base plate 1, a fin structure 2, a lower cold plate 3 and a power semiconductor module 4, wherein the upper part of the base plate 1 is welded with the power semiconductor module 4, the fin structure 2 is positioned below the base plate 1, and the lower cold plate 3 is in sealing connection with the base plate 1.
The substrate 1 and the power semiconductor module 4 are welded together, a thermal interface material such as heat conduction silicone grease is not needed, the heat conduction path of the power semiconductor module is obviously shortened, the influence caused by ageing of the heat conduction silicone grease is eliminated, the lower cold plate 3 is provided with a sealing notch, and the substrate 1 can be tightly mounted on the lower cold plate 3 through bolts and sealing gaskets.
As shown in fig. 2, the fin structure 2 is integrated with the substrate 1, and an integrally formed manufacturing technique is used to avoid excessive contact thermal resistance.
As shown in fig. 3, the fin structure 2 is in a wavy arrangement along the flow direction, the cross section 21 of the fin structure 2 is a mixture of trapezium and parallelogram, and is in a discontinuous arrangement form, so as to form criss-cross flow channels, the longitudinal arrangement main flow channels 22 have larger width and are main heat exchange areas, and the transverse arrangement secondary flow channels 23 have smaller width and are communicated with each main flow channel 22 along the flow direction at a split angle smaller than 90 degrees.
As shown in fig. 4, the lower cold plate 3 is provided with independent mounting slots at the position of each power semiconductor module 4, fluid working medium flows into the lower cold plate 3 from the water inlet 31, is divided into three parallel waterways 33 through the inlet channel 32 with a trapezoid cross section, directly flows through the base plate 1 and the fin structure 2 at the bottom of the power semiconductor module 4 for heat exchange, and finally is collected in the outlet channel 34 with an inverted trapezoid cross section and flows out from the water outlet 35. The lower cold plate can realize flow balance among different waterways, so that the chip temperature difference among the power semiconductor modules is ensured to be less than 5 ℃.
Fig. 5 is a top view of the cold plate under the direct liquid cooling structure, which more intuitively shows the positional relationship among the water inlet 31, the inlet channel 32, the waterway 33, the outlet channel 34 and the water outlet 35.
Fig. 6 shows a CFD simulation flow diagram of the direct liquid cooling heat dissipation structure of the present invention, the introduction of the secondary flow channels 23 promotes the flow mixing of the flowing medium between the primary flow channels 22, and forms dean vortex between the fins to enhance the internal disturbance of the fluid, and meanwhile, the wavy fin arrangement can effectively inhibit the growth of the thermal boundary layer, so that the higher heat exchange efficiency is maintained in the whole flow area.
Fig. 7 shows that the direct liquid cooling heat dissipation structure of the present invention is compared with the conventional Pin-Fin performance, and the proposed design structure is simple and superior to the conventional Pin-Fin liquid cooling heat sink in terms of heat exchange performance, flow pressure drop, etc.
The wavy fin structure with the secondary flow passage can be structurally adjusted according to application requirements of different occasions.
As shown in fig. 8, the heat exchange efficiency is improved by adopting the fin layout with larger fluctuation frequency and amplitude, and the dense arrangement is carried out for strengthening local cooling aiming at the central high heat flux area;
as shown in fig. 9, the use of an arcuate fin design reduces unnecessary flow losses, thereby reducing pumping pressure drop while ensuring heat exchange capacity.
Since most converters are multi-heat source systems, power loss is mainly generated by the chips, which inevitably generates a "hot spot" phenomenon of maldistribution. Conventional heat dissipation structures, such as integrated Pin-Fin, mainly employ uniform Fin arrangements to pursue improvement of overall heat dissipation capacity of the system, lack of consideration of temperature uniformity of the multi-heat source system, and lower overall heat dissipation efficiency. The invention can be combined with practical application, and performs dense arrangement on high heat flux areas to strengthen local cooling performance, and the optimization steps are that a finite element simulation model corresponding to an actual power module is firstly established, and boundary conditions under an application scene are established to obtain temperature field distribution of the module. Then selecting proper machine learning or intelligent algorithm, optimizing the fin structure according to the design target (such as thermal resistance, pressure drop, chip heat balance, etc.), and automatically generating optimized fin structure and runner layout, as shown in fig. 8. Simulation shows that the novel heat dissipation structure has great application potential, and the optimized structure can remarkably reduce the temperature difference of chips between power modules while maintaining low flow pressure drop.
The following are two specific embodiments of this technique:
example 1:
In a direct liquid cooled heat sink structure for a corrugated SiC device with secondary flow channels, we can choose to use an integrated fabrication method to integrate the substrate and fin structures. Such an embodiment may greatly simplify the manufacturing process, reduce the number of parts and complexity of assembly, and also help to improve the heat dissipation.
The structure is realized by firstly, welding the upper part of the substrate with the power semiconductor module. We then designed and fabricated fin structures under the base plate. The cross section of the fin structure can be trapezoid, parallelogram or mixture of curved sides and is staggered with each other to form discontinuous arrangement mode. Finally, the lower cold plate is in sealing connection with the base plate, the lower cold plate is provided with a sealing notch, and the base plate is tightly installed on the lower cold plate through bolts and sealing gaskets.
Example 2:
In another wave-shaped SiC device direct liquid cooling heat dissipation structure with secondary channels, a crisscrossed flow channel can be designed, wherein the width of the longitudinally arranged primary channels is larger, and the width of the transversely arranged secondary channels is smaller. This design can effectively increase the flow path of the cooling liquid in the radiator, thereby improving the heat radiation effect.
The structure is realized by firstly, welding the upper part of the substrate with the power semiconductor module. We then designed and fabricated fin structures under the base plate. The fins form criss-cross flow channels, wherein the width of the longitudinally arranged main flow channels is larger, the width of the transversely arranged secondary flow channels is smaller, and the secondary flow channels are communicated with the main flow channels along the flow direction at a split angle smaller than 90 degrees. Finally, the lower cold plate is in sealing connection with the base plate, the lower cold plate is provided with a sealing notch, and the base plate is tightly installed on the lower cold plate through bolts and sealing gaskets.
Both embodiments can effectively improve the heat dissipation effect, and the design and manufacturing processes are relatively simple, thereby having high practicability.
According to the invention, the upper part of the substrate is welded with the power semiconductor module, and the lower cold plate is matched with the substrate for sealing connection, so that the heat dissipation efficiency can be effectively improved.
The invention integrates the fin structure and the substrate together, is manufactured by integral molding, and enhances the stability and the heat dissipation efficiency of the structure.
The unique fin structure design of the invention ensures that the cross section shape of the fin structure presents a discontinuous arrangement form, which is beneficial to improving the flow efficiency and the heat dissipation effect of the cooling liquid.
According to the invention, through the crisscross flow channel design, the heat dissipation efficiency and the heat dissipation uniformity are effectively improved.
The invention can realize the tight connection of the base plate and the lower cold plate by the design that the lower cold plate is provided with the sealing notch, thereby further improving the heat dissipation effect and the stability of the equipment.
The lower cooling plate adopts parallel waterway arrangement, can independently cool each power semiconductor module, and optimizes the cooling effect.
The number of the parallel waterways of the lower cold plate is consistent with the number of the power semiconductor modules used for cooling, so that the cooling effect is more uniform, and the stable operation of the equipment is improved.
The cross section of the inlet channel of the lower cold plate adopts a gradually-expanding shape, so that the design can effectively balance the flow speed and the flow quantity of the cooling liquid, thereby realizing better cooling effect.
The fin structures of the cooling device are arranged in a wave-shaped mode along the flowing direction, so that turbulence is formed in the flowing process of the cooling liquid, and the heat dissipation efficiency is improved.
The substrate and the fin structure are made of heat-conducting metal materials, and the materials are selected so that the device has better heat dissipation effect and longer service life.
In the description of the present invention, unless otherwise indicated, the meaning of "plurality" is two or more, and the terms "upper", "lower", "left", "right", "inner", "outer", "front", "rear", "head", "tail", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, are merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus are not to be construed as limiting the present invention. Furthermore, the terms "first," "second," "third," and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
The foregoing is merely illustrative of specific embodiments of the present invention, and the scope of the invention is not limited thereto, but any modifications, equivalents, improvements and alternatives falling within the spirit and principles of the present invention will be apparent to those skilled in the art within the scope of the present invention.
Claims (4)
1. The wave-shaped SiC device direct liquid cooling heat dissipation structure with the secondary flow channel is characterized by comprising a substrate, a fin structure, a lower cold plate and a power semiconductor module, wherein the upper part of the substrate is welded with the power semiconductor module, the fin structure is positioned below the substrate, and the lower cold plate is connected with the substrate in a sealing way;
the fin structure and the base plate are integrated together and manufactured by adopting integrated molding;
The cross section of the fin structure is trapezoid, parallelogram or mixture of curved sides and quadrilaterals, and the fin structure is staggered with each other to form discontinuous arrangement mode;
The fin structures form crisscross flow channels, and the width of the longitudinally arranged main flow channels is larger, and the width of the transversely arranged secondary flow channels is smaller, and the secondary flow channels are communicated with each main flow channel along the flow direction at a split angle smaller than 90 degrees;
The lower cold plate is provided with a sealing notch, and the substrate can be tightly mounted on the lower cold plate through bolts and sealing gaskets;
the lower cold plate adopts parallel waterway arrangement, and each power semiconductor module is provided with an independent mounting notch which is respectively a water inlet, an inlet channel, an outlet channel and a water outlet;
The number of parallel waterways of the lower cold plate is consistent with the number of power semiconductor modules for cooling.
2. The direct liquid cooling heat dissipating structure of the wavy SiC device with the secondary flow path according to claim 1, wherein the inlet channel section of the lower cooling plate adopts a gradually expanding shape including a trapezoid shape and a parabolic shape, and the outlet channel is in a tapered shape opposite to the trapezoid shape and the parabolic shape, the width of the outlet channel is larger as the outlet channel is farther from the water inlet.
3. The direct liquid cooling heat dissipation structure of wavy SiC devices with secondary flow channels according to claim 1, wherein the fin structure is arranged in a wavy form along the flow direction, and the number of channels, the number of turns and the structural parameters of the fluctuation amplitude can be changed according to the application requirements.
4. The direct liquid cooling heat sink structure of wavy SiC devices with secondary flow paths of claim 1, wherein the substrate and fin structures are made of a thermally conductive metal material including copper, aluminum silicon carbide.
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| CN118693023B (en) * | 2024-08-27 | 2024-11-08 | 浙江翠展微电子有限公司 | A power module with a packaging structure capable of improving heat dissipation capability |
| CN120545270A (en) * | 2025-05-23 | 2025-08-26 | 华中科技大学 | An efficient heat dissipation structure for high power density SiC power devices |
| CN120809690B (en) * | 2025-07-07 | 2026-03-17 | 东莞理工学院 | Liquid cooling power module heat sink structure with groove pin teeth |
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