CN117655330A - Manufacturing method of copper-based silicon carbide composite ceramic - Google Patents
Manufacturing method of copper-based silicon carbide composite ceramic Download PDFInfo
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- CN117655330A CN117655330A CN202311520496.0A CN202311520496A CN117655330A CN 117655330 A CN117655330 A CN 117655330A CN 202311520496 A CN202311520496 A CN 202311520496A CN 117655330 A CN117655330 A CN 117655330A
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- silicon carbide
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- based silicon
- ceramic
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 63
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 63
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 51
- 239000000919 ceramic Substances 0.000 title claims abstract description 45
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 43
- 239000010949 copper Substances 0.000 title claims abstract description 43
- 239000002131 composite material Substances 0.000 title claims abstract description 21
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 239000002002 slurry Substances 0.000 claims abstract description 21
- 238000005245 sintering Methods 0.000 claims abstract description 14
- 239000011268 mixed slurry Substances 0.000 claims abstract description 11
- 238000002156 mixing Methods 0.000 claims abstract description 11
- 238000000227 grinding Methods 0.000 claims abstract description 8
- 238000007493 shaping process Methods 0.000 claims abstract description 5
- 238000005219 brazing Methods 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 239000002904 solvent Substances 0.000 claims description 9
- 239000011889 copper foil Substances 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical group [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 239000000853 adhesive Substances 0.000 claims description 6
- 230000001070 adhesive effect Effects 0.000 claims description 6
- 239000002994 raw material Substances 0.000 claims description 6
- 238000007873 sieving Methods 0.000 claims description 6
- 239000007787 solid Substances 0.000 claims description 6
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 5
- 238000003756 stirring Methods 0.000 claims description 5
- 238000004381 surface treatment Methods 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 238000000137 annealing Methods 0.000 claims description 3
- 238000000498 ball milling Methods 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims description 3
- 230000005484 gravity Effects 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 238000005488 sandblasting Methods 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 2
- 238000000465 moulding Methods 0.000 claims description 2
- 238000007747 plating Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 12
- 230000017525 heat dissipation Effects 0.000 abstract description 6
- 238000005538 encapsulation Methods 0.000 abstract description 3
- 229910000881 Cu alloy Inorganic materials 0.000 abstract description 2
- 239000011230 binding agent Substances 0.000 abstract description 2
- 238000010438 heat treatment Methods 0.000 abstract description 2
- 238000005498 polishing Methods 0.000 abstract description 2
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000000956 alloy Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000011156 metal matrix composite Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
- C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/02—Compacting only
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/10—Sintering only
- B22F3/1003—Use of special medium during sintering, e.g. sintering aid
- B22F3/1007—Atmosphere
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/24—After-treatment of workpieces or articles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F5/00—Manufacture of workpieces or articles from metallic powder characterised by the special shape of the product
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/02—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers
- B22F7/04—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers with one or more layers not made from powder, e.g. made from solid metal
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
- C22C1/05—Mixtures of metal powder with non-metallic powder
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C32/00—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
- C22C32/0047—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents
- C22C32/0052—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents only carbides
- C22C32/0063—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents only carbides based on SiC
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/24—After-treatment of workpieces or articles
- B22F2003/247—Removing material: carving, cleaning, grinding, hobbing, honing, lapping, polishing, milling, shaving, skiving, turning the surface
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/24—After-treatment of workpieces or articles
- B22F2003/248—Thermal after-treatment
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- C—CHEMISTRY; METALLURGY
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/656—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
- C04B2235/6567—Treatment time
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/658—Atmosphere during thermal treatment
- C04B2235/6581—Total pressure below 1 atmosphere, e.g. vacuum
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- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Metallurgy (AREA)
- Structural Engineering (AREA)
- Composite Materials (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inorganic Chemistry (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The application discloses a method for manufacturing copper-based silicon carbide composite ceramic, which comprises the steps of mixing a proper amount of prepared silicon carbide slurry with copper alloy slurry, and adding a proper amount of binder to form mixed slurry. And then, placing the mixed slurry in a mould for shaping, and forming the compact copper-based silicon carbide composite ceramic by means of heat treatment such as vacuum sintering. Finally, a flat surface is obtained through grinding, polishing and other processes. The composite ceramic has excellent heat conducting performance and mechanical strength, and is suitable for heat dissipation and encapsulation of high-power electronic devices.
Description
Technical Field
The application relates to a manufacturing and application method of metal substrate composite ceramic, in particular to a manufacturing method of copper-based silicon carbide composite ceramic.
Background
With the increasing power of electronic devices, heat dissipation becomes a critical factor limiting their performance and lifetime. Conventional heat dissipating materials, such as aluminum-based and copper-based materials, have failed to meet the requirements of high power electronic devices due to their thermal conductivity and mechanical strength limitations. Ceramic materials such as aluminum nitride and silicon carbide become an ideal heat dissipation material due to the excellent heat conduction property and mechanical strength. However, the manufacturing process of ceramics such as aluminum nitride and silicon carbide is complicated and the cost is high.
Disclosure of Invention
The invention aims to provide a manufacturing method of copper-based silicon carbide composite ceramic, which has excellent heat conduction performance and mechanical strength and is suitable for heat dissipation and encapsulation of high-power electronic devices.
In order to achieve the above purpose, the present invention provides the following technical solutions.
The embodiment of the application discloses a manufacturing method of copper-based silicon carbide composite ceramic, which sequentially comprises the following steps:
s1, preparing raw materials, namely placing a silicon carbide raw material into a ball mill for ball milling to obtain silicon carbide powder, sieving the silicon carbide powder to obtain silicon carbide powder with uniform fineness, and pouring the silicon carbide powder into an ethanol solvent to obtain silicon carbide slurry with the solid content of 80%;
s2, grinding the copper powder, sieving to obtain fine copper powder, adding an adhesive to mix, and uniformly mixing the copper powder and the adhesive;
s3, mixing, namely mixing the silicon carbide slurry with the copper powder obtained in the step S2 according to specific gravity, and placing the mixture in a stirrer to stir for more than 1 hour to obtain copper-based silicon carbide slurry;
s4, defoaming, namely defoaming the copper-based silicon carbide slurry, extracting redundant solvent, continuously stirring the slurry in a defoaming tank when extracting the solvent, and improving the viscosity of the original slurry by defoaming, so that the solid content of the mixed slurry is improved to 96+/-1%;
s5, molding, namely placing the mixed slurry into a mold for shaping;
s6, sintering, namely placing the formed blank into a vacuum sintering furnace for high-temperature sintering at 1100 ℃ to form a copper-based silicon carbide ceramic substrate;
s7, annealing, namely, preserving heat of the sintered copper-based silicon carbide ceramic substrate for 6 hours at 200 ℃, and naturally cooling to obtain copper-based silicon carbide;
s8, surface treatment, namely processing and surface treatment are carried out on the copper-based silicon carbide, and grinding or sand blasting treatment is carried out to improve the performance and appearance quality of the copper-based silicon carbide;
and S9, manufacturing a circuit pattern, namely plating a metal layer on the surface of the copper-based silicon carbide with the surface treated, printing brazing material on the front and back surfaces of the high-heat-conductivity ceramic, then adhering copper foil on the top surface and the bottom surface of the ceramic, compacting the ceramic on the metal layer, sintering the ceramic in a vacuum brazing furnace by using a metal plate, and etching the copper foil to obtain the required circuit pattern according to requirements after brazing.
Preferably, in the method for manufacturing a copper-based silicon carbide composite ceramic, the metal layer is a nickel layer.
Preferably, in the method for manufacturing a copper-based silicon carbide composite ceramic, the high thermal conductivity ceramic is aluminum nitride or silicon nitride.
Compared with the prior art, the aluminum-based and copper-based alloy material has the advantages that the aluminum-based and copper-based alloy material has excellent heat conduction performance and higher heat conductivity than the traditional aluminum-based and copper-based materials; secondly, due to the high conductivity of copper, the composite ceramic also has good electromagnetic shielding performance; in addition, the composite ceramic has good mechanical strength and heat resistance, and can bear the working condition of high-power electronic devices. The composite ceramic also has good dimensional stability and surface flatness, and is suitable for microelectronic packaging and heat dissipation systems.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings that are required to be used in the embodiments or the description of the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments described in the present application, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic view of a copper-based silicon carbide composite ceramic according to an embodiment of the present invention.
Detailed Description
The following detailed description of the technical solutions according to the embodiments of the present invention will be given with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are only some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Referring to fig. 1, a method for producing a copper-based silicon carbide composite ceramic includes mixing a proper amount of prepared silicon carbide slurry with a copper alloy slurry, and adding a proper amount of binder to form a mixed slurry. And then, placing the mixed slurry in a mould for shaping, and forming the compact copper-based silicon carbide composite ceramic by means of heat treatment such as vacuum sintering. Finally, a flat surface is obtained through grinding, polishing and other processes.
1. Raw material preparation: firstly, placing a silicon carbide raw material into a ball mill, and performing ball milling to obtain silicon carbide powder; sieving the silicon carbide powder, wherein the fineness of the silicon carbide powder is uniform; and pouring the fine silicon carbide powder into solvents such as ethanol, a surface modifier and the like to obtain the silicon carbide slurry with the solid content of 80%.
Grinding the copper powder, sieving to obtain fine copper powder, adding adhesive, and mixing to obtain uniform mixture of copper powder and adhesive.
2. Mixing: mixing the silicon carbide slurry obtained in the step 1 with copper powder according to specific gravity, and placing the mixture in a stirrer for stirring for more than 1 hour to obtain the copper-based silicon carbide slurry.
3. Defoaming: and (3) further defoaming the mixed slurry obtained in the step two, and extracting the redundant solvent, wherein the slurry is required to be continuously stirred in a defoaming tank when the solvent is extracted. The viscosity of the original slurry is improved by defoaming, and the solid content of the mixed slurry is improved to 96+/-1%.
4. And (3) forming: and (5) placing the mixed slurry into a mould for shaping.
5. Sintering: and (3) placing the formed green body into a vacuum sintering furnace for high-temperature sintering, wherein the sintering temperature is generally about 1100 ℃ to form the copper-based silicon carbide ceramic substrate.
6. Annealing: and (3) preserving the heat of the sintered copper-based silicon carbide for 6 hours at 200 ℃. And naturally cooling to obtain the copper-based silicon carbide.
7. Surface treatment: the sintered copper-based silicon carbide ceramic substrate is processed and surface treated, typically by grinding or sand blasting, to improve its performance and appearance quality.
8. And (3) line pattern manufacturing: the surface treated copper-based silicon carbide is plated with a metal layer, typically a nickel layer. And printing brazing material on the front and back sides of ceramics (high-heat-conductivity ceramics such as aluminum nitride, silicon nitride and the like), and pasting copper foil on the surface of the ceramics, and stacking according to the diagram 1, wherein a copper foil layer 1, a brazing layer 2, a ceramic layer 3, a brazing layer 4, a metal layer 5, copper-based silicon carbide 6, a metal layer 7, a brazing layer 8, a ceramic layer 9, a brazing layer 10 and a copper foil layer 11 are compacted by a metal plate and sintered in a vacuum brazing furnace. After the brazing is finished, the copper foil is etched into a required circuit pattern according to the requirement.
The invention provides a manufacturing method and an application scheme of metal matrix composite ceramic, wherein the composite ceramic has excellent heat conduction performance and mechanical strength, has smaller density than the conventional metal material, has an expansion coefficient more similar to that of ceramic, and is suitable for heat dissipation and encapsulation of high-power electronic devices. In the application, the circuit design of the front and back sides can reduce the size of the whole package and improve the integration level of the whole packaged product. For example, it can be used in power amplifiers, power modules, optoelectronic devices, etc. The application of the invention has wide market prospect and economic benefit in the field of electronic devices
It is noted that relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
The foregoing is merely exemplary of the application and it should be noted that modifications and adaptations to those skilled in the art may be made without departing from the principles of the application and are intended to be comprehended within the scope of the application.
Claims (3)
1. The manufacturing method of the copper-based silicon carbide composite ceramic is characterized by comprising the following steps in sequence:
s1, preparing raw materials, namely placing a silicon carbide raw material into a ball mill for ball milling to obtain silicon carbide powder, sieving the silicon carbide powder to obtain silicon carbide powder with uniform fineness, and pouring the silicon carbide powder into an ethanol solvent to obtain silicon carbide slurry with the solid content of 80%;
s2, grinding the copper powder, sieving to obtain fine copper powder, adding an adhesive to mix, and uniformly mixing the copper powder and the adhesive;
s3, mixing, namely mixing the silicon carbide slurry with the copper powder obtained in the step S2 according to specific gravity, and placing the mixture in a stirrer to stir for more than 1 hour to obtain copper-based silicon carbide slurry;
s4, defoaming, namely defoaming the copper-based silicon carbide slurry, extracting redundant solvent, continuously stirring the slurry in a defoaming tank when extracting the solvent, and improving the viscosity of the original slurry by defoaming, so that the solid content of the mixed slurry is improved to 96+/-1%;
s5, molding, namely placing the mixed slurry into a mold for shaping;
s6, sintering, namely placing the formed blank into a vacuum sintering furnace for high-temperature sintering at 1100 ℃ to form a copper-based silicon carbide ceramic substrate;
s7, annealing, namely, preserving heat of the sintered copper-based silicon carbide ceramic substrate for 6 hours at 200 ℃, and naturally cooling to obtain copper-based silicon carbide;
s8, surface treatment, namely processing and surface treatment are carried out on the copper-based silicon carbide, and grinding or sand blasting treatment is carried out to improve the performance and appearance quality of the copper-based silicon carbide;
and S9, manufacturing a circuit pattern, namely plating a metal layer on the surface of the copper-based silicon carbide with the surface treated, printing brazing material on the front and back surfaces of the high-heat-conductivity ceramic, then adhering copper foil on the top surface and the bottom surface of the ceramic, compacting the ceramic on the metal layer, sintering the ceramic in a vacuum brazing furnace by using a metal plate, and etching the copper foil to obtain the required circuit pattern according to requirements after brazing.
2. The method for producing a copper-based silicon carbide composite ceramic according to claim 1, wherein the metal layer is a nickel layer.
3. The method of manufacturing a copper-based silicon carbide composite ceramic according to claim 1, wherein the high thermal conductivity ceramic is aluminum nitride or silicon nitride.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311520496.0A CN117655330A (en) | 2023-11-15 | 2023-11-15 | Manufacturing method of copper-based silicon carbide composite ceramic |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202311520496.0A CN117655330A (en) | 2023-11-15 | 2023-11-15 | Manufacturing method of copper-based silicon carbide composite ceramic |
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| CN117655330A true CN117655330A (en) | 2024-03-08 |
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| CN202311520496.0A Pending CN117655330A (en) | 2023-11-15 | 2023-11-15 | Manufacturing method of copper-based silicon carbide composite ceramic |
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