CN117526679A - High-power-density flattened rectifying inversion module - Google Patents
High-power-density flattened rectifying inversion module Download PDFInfo
- Publication number
- CN117526679A CN117526679A CN202311516745.9A CN202311516745A CN117526679A CN 117526679 A CN117526679 A CN 117526679A CN 202311516745 A CN202311516745 A CN 202311516745A CN 117526679 A CN117526679 A CN 117526679A
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- Prior art keywords
- module
- rectifying
- density
- igbt
- power
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Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/20—Modifications to facilitate cooling, ventilating, or heating
- H05K7/2039—Modifications to facilitate cooling, ventilating, or heating characterised by the heat transfer by conduction from the heat generating element to a dissipating body
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/36—Means for starting or stopping converters
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M5/00—Conversion of AC power input into AC power output, e.g. for change of voltage, for change of frequency, for change of number of phases
- H02M5/40—Conversion of AC power input into AC power output, e.g. for change of voltage, for change of frequency, for change of number of phases with intermediate conversion into DC
- H02M5/42—Conversion of AC power input into AC power output, e.g. for change of voltage, for change of frequency, for change of number of phases with intermediate conversion into DC by static converters
- H02M5/44—Conversion of AC power input into AC power output, e.g. for change of voltage, for change of frequency, for change of number of phases with intermediate conversion into DC by static converters using discharge tubes or semiconductor devices to convert the intermediate DC into AC
- H02M5/453—Conversion of AC power input into AC power output, e.g. for change of voltage, for change of frequency, for change of number of phases with intermediate conversion into DC by static converters using discharge tubes or semiconductor devices to convert the intermediate DC into AC using devices of a triode or transistor type requiring continuous application of a control signal
- H02M5/458—Conversion of AC power input into AC power output, e.g. for change of voltage, for change of frequency, for change of number of phases with intermediate conversion into DC by static converters using discharge tubes or semiconductor devices to convert the intermediate DC into AC using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M5/4585—Conversion of AC power input into AC power output, e.g. for change of voltage, for change of frequency, for change of number of phases with intermediate conversion into DC by static converters using discharge tubes or semiconductor devices to convert the intermediate DC into AC using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only having a rectifier with controlled elements
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Rectifiers (AREA)
Abstract
The invention discloses a high-power-density flattening rectification inversion module which comprises a bus capacitor plate, a driving plate, a rectification module and an IGBT module, wherein the bus capacitor plate, the driving plate, the rectification module and the IGBT module are sequentially arranged on a radiator in a layered manner, a laminated copper bar is used as a bus copper bar to connect the rectification module and the IGBT module, a positive bus bar and a negative bus bar are arranged into an L shape and are closely attached with middle-layer PET insulating paper at intervals, a bus capacitor plate is arranged on a supporting copper column of the laminated copper bar, and an absorption capacitor is further arranged above the bus capacitor plate. The rectification module that this scheme adopted integrates six rectifier diode and a thyristor, and drive plate control rectification module realizes soft start function to the drive plate controls IGBT module simultaneously and realizes the contravariant, has realized rectification inverter circuit's high integration, very big increase rectification inverter module's power density, saved the space of the inside overall arrangement of power.
Description
Technical Field
The invention relates to the field of rectification inversion modules, in particular to a rectification inversion module for an aircraft ground static-change power supply.
Background
At present, an aircraft ground static power supply is commonly installed below an airport corridor bridge, and the installation position of the power supply is very limited because the space below the corridor bridge is limited and space is reserved for a ventilation pipe of an air conditioner. Some power supplies only adopt the structural style of cantilever beam, install in the space that deviates from corridor bridge major structure, cause the power after the installation, the power gallows has the condition of deformation rocking. Therefore, the aircraft ground dead-change power supply is required to be miniaturized and light. However, the largest space occupied by the rectification inversion module is the main reason for increasing the size of the whole power supply in the ground static change power supply structure of the airplane in the market at present. In view of the technical defects, the volume of the aircraft ground static change power supply is increased, and the power density is too small, so that the installation and arrangement of the power supply under the gallery bridge are not facilitated.
Disclosure of Invention
The invention aims to solve the technical problems, and provides a high-power-density flattening rectification inversion module which aims to solve the technical problems that the overall dimension of a power supply is large, the power density of the whole machine is too small, and air spaces are arranged under corridor bridges. The invention is realized by adopting the following technical scheme:
a high-power density flattening rectification inversion module comprises a radiator 1, wherein a fixed bracket 2, a rectification module 3, an IGBT module 10 and a support column 9 are directly arranged on the radiator 1;
the IGBT modules 10 are uniformly arranged on the radiator 1 side by side, and an output copper bar 8 is arranged at the interface below the IGBT modules;
the rectifying module 3 is transversely arranged above the IGBT module 10, and the laminated copper bar 5 is used as a bus copper bar to connect the rectifying module 3 and the IGBT module 10;
a bus capacitor plate 7 is arranged on the laminated copper bar 5, an absorption capacitor 6 is also arranged above the bus capacitor plate 7, and the lower end of the bus capacitor plate 7 is fixedly arranged on a support column 9; the method comprises the steps of carrying out a first treatment on the surface of the
The IGBT module 10, the bus capacitor plate 7, and the rectifier module 3 are electrically connected.
Further, the bus capacitor plate 7 is formed by welding a plurality of electrolytic capacitors 701 in parallel, and the electrolytic capacitors 701 are small electrolytic capacitors each having a height of less than 60mm, a diameter of less than 35mm and a capacitance of less than 850 μf.
Further, in order to reduce the size of the driving board, the IGBT module 10 is welded with a driving adapter board 11, the driving adapter board 11 is welded with a driving socket 110 and a driving strut 111, the driving board 12 is installed below the bus capacitor board 7, the driving board 12 is welded with a plug 120, the lower end is provided with a fixing hole 121, the plug 120 is in one-to-one correspondence with the driving socket 110, the plug 120 is connected or disconnected in an inserting manner, the fixing hole 121 is in one-to-one correspondence with the driving strut 111, and the fixing hole is fixed through a mounting bolt.
Further, a supporting copper pillar 506 is provided at the upper part of the laminated copper bar 5 connected to the IGBT module 10, and a bus capacitor plate 7 is mounted on the supporting copper pillar 506 of the laminated copper bar 5.
Further, the laminated copper bar 5 is formed by sequentially thermocompression bonding an upper PET insulating paper 501, a negative bus bar 502, a middle PET insulating paper 503, a positive bus bar 504, and a lower PET insulating paper 505.
Further, the maximum mountable number of the IGBT modules 10 is six, and the maximum mountable number of the rectifier modules 3 is two.
Furthermore, one rectifying module 3 comprises six rectifying diodes and a thyristor, the rectifying module 3 completes twelve-pulse rectification through the rectifying diodes to obtain pulse direct-current voltage, the voltage is filtered through a bus capacitor plate to form stable bus voltage, and the alternating-current voltage of PWM waveform is obtained after inversion through an IGBT module. .
Further, in order to avoid bus capacitor impact, the module further comprises a soft start resistor 4, and the soft start resistor 4 is connected between the R2 end of the rectifying module 3 and the positive bus bar.
Further, the driving board 12 provides a signal for controlling the thyristor in the rectifying module 3 to be turned on.
Further, the driving board 12 provides a signal for controlling the IGBT module 10 to turn on.
The invention has the advantages that: the bus capacitor plate, the driving plate, the rectifying module and the IGBT module are sequentially arranged on the radiator in a layered mode, and the module space is greatly saved. And the laminated copper bars are used as bus copper bars to connect the rectifying module and the IGBT module, so that the distance between two devices is reduced, and the layout space of the devices is saved. The rectifying module integrating six rectifying diodes and one thyristor is adopted, meanwhile, the driving plate is adopted to control the rectifying module to realize soft start function, and the driving plate is adopted to control the IGBT module to realize inversion, so that the high integration of the rectifying and inverting circuit is realized. After all devices are installed, the maximum output power of 120KW is realized. The power density of the rectifying inversion module is greatly increased, and the space of the internal layout of the power supply is saved. Further provides conditions for achieving downsizing of the overall power supply.
Drawings
FIG. 1 is a schematic top view of the present invention;
FIG. 2 is a schematic elevational view of the present invention;
FIG. 3 is a left side view of the present invention;
FIG. 4 is a schematic perspective view of the present invention;
FIG. 5 is a schematic view of the internal perspective structure of the present invention;
FIG. 6 is a schematic diagram of a perspective structure of a driving plate portion;
FIG. 7 is a schematic view of a stacked copper bar structure;
FIG. 8 is a schematic diagram of an explosion structure of a laminated copper bar;
FIG. 9 is a schematic circuit diagram of the present invention;
FIG. 10 is a schematic diagram of the internal circuit of the rectifying module;
in the figure, a 1-radiator, a 2-fixed support, a 3-rectifying module, a 4-soft start resistor, a 5-laminated copper bar, a 6-absorption capacitor, a 7-bus capacitor plate, an 8-output copper bar, a 9-support pillar, a 10-IGBT module, an 11-drive adapter plate, a 12-drive plate, a 110-drive socket, a 111-drive support pillar, a 120-plug, a 121-fixed hole, 501-upper PET insulating paper, 502-negative bus bar, 503-middle PET insulating paper, 504-positive bus bar, 505-lower PET insulating paper, 506-support copper pillar and 701-small electrolytic capacitor.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention.
The embodiment discloses a high-power-density flattened rectification inversion module, please refer to fig. 1, 2, 3 and 4, which comprises a radiator 1, wherein a fixing bracket 2, a rectification module 3, a soft start resistor 4, an IGBT module 10 and a support column 9 are directly arranged on the radiator 1. IGBT module 10A drive adapter plate 11 is welded on the IGBT module 10. Referring to FIG. 5, a drive socket 110 and a drive stay 111 are welded on the drive adapter plate 11, output copper bars 8 are installed on the lower interface, and the maximum mountable number of the IGBT modules 10 is six and the IGBT modules are uniformly installed on the radiator 1 side by side. The maximum mountable number of the rectifying modules 3 is two, and the rectifying modules are transversely mounted above the IGBT modules 10, and the maximum output power of the module for mounting six IGBT modules and the two rectifying modules can reach 120KW.
Referring to fig. 6, in order to save space, a driving board 12 is installed below the bus capacitor board 7, a plug 120 is welded on the driving board 12, a fixing hole 121 is provided at the lower end, the plug 120 on the driving board 12 can be plugged into the driving socket 110 of the driving adapter board 11, and a bolt can be installed through the fixing hole 121 to fix to the driving strut 111.
As shown in fig. 7 and 8, the positive bus bar and the negative bus bar are L-shaped and closely attached with middle PET insulating paper therebetween, and a supporting copper pillar 506 is disposed at the upper part of the laminated copper bar 5 connected to the IGBT module 10, and the laminated copper bar 5 is formed by sequentially hot-pressing an upper PET insulating paper 501, a negative bus bar 502, a middle PET insulating paper 503, a positive bus bar 504, and a lower PET insulating paper 505.
A bus capacitor plate 7 is mounted on the support copper pillars 506 of the laminated copper bars 5, and an absorption capacitor 6 is further mounted above the bus capacitor plate 7 at the position of the mounting hole. The bus capacitor plate 7 is formed by welding and connecting a plurality of small electrolytic capacitors 701 in parallel, and the lower end of the bus capacitor plate 7 is fixedly arranged on the support column 9.
In order to realize high integration of the circuit, one rectifying module 3 includes six rectifying diodes and one thyristor, please refer to fig. 9 and 10, the rectifying module 3 completes twelve-pulse rectification through the rectifying diodes to obtain pulse direct-current voltage, the voltage is filtered by a bus capacitor plate to form stable bus voltage, and the alternating-current voltage of the PWM waveform is obtained after inversion of the IGBT module.
In order to avoid the bus capacitor impact, a soft start function is added in the rectifying inversion module, and the specific circuit connection is shown in fig. 9. The soft start resistor 4 is connected between the R2 end of the rectifying module and the positive bus bar, the driving board 12 can give out signals to control the opening of thyristors in the rectifying module 3, and in order to realize high integration of circuits, the driving board 12 can control the opening and the closing of the IGBT module 10.
Finally, it should be noted that: the foregoing description of the preferred embodiments of the invention is not intended to limit the invention to the precise form disclosed, and any such modifications, equivalents, and alternatives falling within the spirit and principles of the invention are intended to be included within the scope of the invention.
Claims (10)
1. The utility model provides a high power density flattening rectification contravariant module, includes radiator (1), its characterized in that:
a fixed bracket (2), a rectifying module (3), an IGBT module (10) and a support column (9) are directly arranged on the radiator (1);
the IGBT modules (10) are uniformly arranged on the radiator (1) side by side, and an output copper bar (8) is arranged at the interface below the IGBT modules;
the rectifying module (3) is transversely arranged above the IGBT module (10), and the laminated copper bar (5) is used as a bus copper bar to connect the rectifying module (3) and the IGBT module (10);
a bus capacitor plate (7) is arranged on the laminated copper bar (5), an absorption capacitor (6) is also arranged above the bus capacitor plate (7), and the lower end of the bus capacitor plate (7) is fixedly arranged on a support column (9);
the IGBT module (10), the bus capacitor plate (7) and the rectifying module (3) are electrically connected.
2. The high-power-density flattened rectifying inverter module according to claim 1, wherein the bus capacitor plate (7) is formed by welding a plurality of electrolytic capacitors (701) in parallel.
3. The high-power-density flattened rectification inversion module according to claim 1, wherein the driving adapter plate (11) is welded on the IGBT module (10), the driving socket (110) and the driving strut (111) are welded on the driving adapter plate (11), the driving plate (12) is installed below the bus capacitor plate (7), the plug (120) is welded on the driving plate (12), the fixing holes (121) are arranged at the lower end, the plug (120) is in one-to-one correspondence with the driving socket (110), the plug (120) is connected or disconnected in a plugging manner, and the fixing holes (121) are in one-to-one correspondence with the driving strut (111) and are fixed through mounting bolts.
4. The high-power-density flattened rectifying inversion module according to claim 1, wherein a supporting copper pillar (506) is arranged at the upper part of the laminated copper bar (5) connected with the IGBT module (10), and a bus capacitor plate (7) is mounted on the supporting copper pillar (506) of the laminated copper bar (5).
5. The high-power-density flattened rectifying inverter module according to claim 1, wherein the laminated copper bar (5) is formed by sequentially hot-pressing an upper layer of PET insulating paper (501), a negative busbar (502), a middle layer of PET insulating paper (503), a positive busbar (504) and a lower layer of PET insulating paper (505).
6. The high-power-density flattened rectifying inverter module according to claim 1, characterized in that the maximum mountable number of the IGBT modules (10) is six, and the maximum mountable number of the rectifying modules (3) is two.
7. The high power density flattened rectifier inverter module of claim 1 wherein one rectifier module (3) contains six rectifier diodes and one thyristor.
8. The high-power-density flattened rectifying inverter module of claim 1, further comprising a soft start resistor (4), wherein the soft start resistor (4) is connected between an R2 end of the rectifying module (3) and a positive busbar.
9. The high power density flattened rectifier inverter module of claim 7 wherein the drive board (12) provides a signal to control the firing of thyristors within the rectifier module (3).
10. The high power density flattened rectifier inverter module of claim 7 wherein said drive board (12) provides signals that control the turn-on of the IGBT module (10).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311516745.9A CN117526679A (en) | 2023-11-15 | 2023-11-15 | High-power-density flattened rectifying inversion module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311516745.9A CN117526679A (en) | 2023-11-15 | 2023-11-15 | High-power-density flattened rectifying inversion module |
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| Publication Number | Publication Date |
|---|---|
| CN117526679A true CN117526679A (en) | 2024-02-06 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311516745.9A Pending CN117526679A (en) | 2023-11-15 | 2023-11-15 | High-power-density flattened rectifying inversion module |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN204257409U (en) * | 2014-11-20 | 2015-04-08 | 浙江正泰电器股份有限公司 | The capacitance component of frequency converter and frequency converter |
| CN207069950U (en) * | 2017-08-04 | 2018-03-02 | 王伟 | A kind of air-cooled isolated form BLDCM controller architectures |
| CN209250499U (en) * | 2018-12-27 | 2019-08-13 | 深圳市汇川技术股份有限公司 | Big-power transducer |
| CN110311596A (en) * | 2019-07-11 | 2019-10-08 | 合肥巨一动力系统有限公司 | A kind of integrated Double Motor Control device |
| CN210927430U (en) * | 2019-11-21 | 2020-07-03 | 中冶赛迪电气技术有限公司 | High-power H bridge high-voltage frequency converter power unit |
-
2023
- 2023-11-15 CN CN202311516745.9A patent/CN117526679A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN204257409U (en) * | 2014-11-20 | 2015-04-08 | 浙江正泰电器股份有限公司 | The capacitance component of frequency converter and frequency converter |
| CN207069950U (en) * | 2017-08-04 | 2018-03-02 | 王伟 | A kind of air-cooled isolated form BLDCM controller architectures |
| CN209250499U (en) * | 2018-12-27 | 2019-08-13 | 深圳市汇川技术股份有限公司 | Big-power transducer |
| CN110311596A (en) * | 2019-07-11 | 2019-10-08 | 合肥巨一动力系统有限公司 | A kind of integrated Double Motor Control device |
| CN210927430U (en) * | 2019-11-21 | 2020-07-03 | 中冶赛迪电气技术有限公司 | High-power H bridge high-voltage frequency converter power unit |
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