CN1174869A - Polishing disc for chemcal-mechanical polishing and making method - Google Patents

Polishing disc for chemcal-mechanical polishing and making method Download PDF

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CN1174869A
CN1174869A CN 97116804 CN97116804A CN1174869A CN 1174869 A CN1174869 A CN 1174869A CN 97116804 CN97116804 CN 97116804 CN 97116804 A CN97116804 A CN 97116804A CN 1174869 A CN1174869 A CN 1174869A
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polishing
boron nitride
hexagonal boron
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CN1060424C (en
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汪宁
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汪宁
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Abstract

The present invention discloses a polishing disk for chemical-mechanical polishing process and its making method. Said invention uses hexagonal boron nitride ceramics material as polishing disk material, and its structure can be single layer or three-layer composite structure, and its form can be disk form or ring form. Its making method adopts sintering and polymerization crosslinking or foamingpolymerization crosslinking method. By its comprehensive properties said invented polishing disk is specially suitable for polishing integrated circuit silicon wafer in semiconductor industry, so that it can greatly raise product quality and service life of the polishing disk.

Description

用于化学——机械抛光的抛光盘及其制造方法 A chemical - mechanical polishing method for polishing and manufacturing

本发明涉及半导体部件的抛光加工领域,具体说,涉及一种用于半导体部件的化学——机械抛光的抛光盘及其制造方法。 The present invention relates to the field of polishing a semiconductor component, in particular, to a member for a semiconductor chemical - mechanical polishing method of manufacturing the polishing.

集成电路是计算机和电子工业的核心部件。 IC is the core component of the computer and electronics industry. 集成电路是制造在半导体硅片上的。 The integrated circuit is fabricated on a semiconductor wafer. 单晶硅片是由定向长大的单晶硅棒上切下来的,直径一般为3英寸至8英寸,厚度低于1.0毫米。 Single crystal silicon wafer is cut out by the orientation of the grown silicon single crystal rod diameter is generally 3-8 inches, a thickness less than 1.0 mm. 图1为硅片表面示意图。 FIG 1 is a schematic view of the silicon wafer surface. 硅片表面被分为数百个小区。 Wafer surface is divided into hundreds of cells. 每一个小区对应一块集成电路片。 Each cell corresponds to an IC chip. 经过一系列加工程序之后,单个的集成电路片被从硅片上切割或剥离下来,再经过封装和测试就完成了集成电路的制作过程。 After a series of processing procedures, a single integrated circuit chip is cut or peeled from the silicon wafer, then packaged and tested to complete through the manufacturing process of the integrated circuit.

光刻是在硅片上制作集成电路的基本技术,在抛光的硅片上首先制出由PN结组成的电子单元,其直径小于1.0微米,甚至小于0.5微米。 Photolithography is the basic integrated circuit fabrication techniques on a silicon wafer, the silicon wafer is first made on the polishing of an electronic unit composed of a PN junction having a diameter less than 1.0 micron, or even less than 0.5 microns. 为了隔离不同PN结单元,硅片上刻出了沟槽并填充了沉积的绝缘体(一般为氧化硅)。 In order to isolate different PN junction cells, carved on a silicon wafer and the trench is filled with the deposited insulator (typically silicon oxide). 图1示出了包含了多个集成片(12)的硅片(11),其中每一片上又区分为电子单元的高密度区(13)(一般处于中心位置)和电子单元的低密度区(14)(一般处于边缘位置)。 Figure 1 shows an integrated sheet comprising a plurality (12) of the wafer (11), wherein each further divided into an upper high-density region of the electronic unit (13) (typically at the center) and low-density electronic unit area (14) (typically in the edge position).

电子单元之间通过硅片表面沉积的金属(铝、钨、铜等)花样进行联结,由于单层联结的集成电路并不能充分发挥电子单元的作用,因此多层的金属花样被用来提高集成度,每一层之间被沉积的绝缘体隔开,随着层数的增加(现已超过十层)集成电路的功能也就随着大大地增加。 Between the electronic surface of the silicon deposited by means of metal (aluminum, tungsten, copper or the like) for coupling pattern, and since an integrated circuit coupled monolayer is not fully functional electronic units, the multilayer metal pattern thus be used to improve the integration degrees, between each layer separated by an insulator is deposited, with increasing number of layers (now over ten layers) of an integrated circuit function also with greatly increased.

图2是带有金属花样及沉积的绝缘层的硅片示意图,在硅片(20)上,绝缘层(21)(氧化硅或其它金属氧化物)的厚度稍大于金属层(22)的厚度,并由于金属花样的高低不平显示出相应的台阶,在超大规模集成电路板上,这种台阶高度等于或小于1.0微米,宽度和长度范围在1.0微米和1.0毫米之间。 FIG 2 is a thickness of the metal pattern with a schematic view of the silicon wafer and the insulating layer deposited on a silicon wafer (20), the thickness of the insulating layer (21) (silicon oxide or other metal oxides) is slightly larger than the metal layer (22) and since the uneven pattern of the metal exhibits corresponding step, in VLSI plate, this step height is equal to or less than 1.0 micron, a width and a length ranging between 1.0 microns and 1.0 mm. 而一块集成电路上,由第一层金属可以形成几百万个台阶。 And an integrated circuit on one, the first metal layer may be formed several million steps.

这种表面的不平整性,使得后续工艺非常困难,因此需要对硅片表面进行平整化加工。 Such unevenness of the surface, so that the subsequent process is very difficult, hence the need for planarization of the wafer surface machining. 图3为经平整化抛光处理后的硅片(30)示意图,图中绝缘层(31)和金属层(32)的表面处于同一水平上,在这个表面上可以进行第二次的金属花样和绝缘层的沉积加工。 FIG 3 is a silicon wafer via (30) after polishing planarization schematic drawing surface of the insulating layer (31) and a metal layer (32) is at the same level, can be a second metal pattern on this surface, and the insulating layer deposition process.

化学——机械抛光工艺是半导体工业中占统治地位的抛光工艺,图4是该工艺所用抛光装置的基本示意图,抛光盘(43)固定在旋转台(41)上,硅片(44)固定在夹具(45)上,夹具上有加压、旋转和水平移动机构(46),硅片和旋转台的双重旋转使硅片上每点与抛光盘之间的相对运动保持相同的线速度。 Chemical - mechanical polishing process in the semiconductor industry dominant polishing process, FIG. 4 shows a basic diagram of the process used in the polishing apparatus, polishing disc (43) fixed to the rotary table (41), the wafer (44) is fixed a jig (45) with the pressing jig, rotation and horizontal movement mechanism (46), and the double wafer rotating the turntable so that relative movement between each point on the wafer holder and the polishing of the same linear velocity. 抛光液中还添加了直径为20-100纳米的硬颗粒对被加工表面起到机械抛光的作用,碱性溶液则起到化学抛光的作用。 The polishing effect was also added 20 to 100 nanometers in diameter of the hard particles play the role of mechanical polishing working surface, the alkaline solution of chemical polishing functions.

抛光盘(43)由多孔材料组成,抛光盘内连通的孔隙保证了抛光液的流通,并可以带走抛光过程的磨屑。 Polishing disc (43) composed of a porous material, the pores of the polishing platen to ensure communication with the flow of the polishing liquid and polishing debris can be taken away process. 抛光盘的材料选择非常重要,但选择范围又不大。 Polishing material selection is very important, but not a very big choice. 首先不能用导体,因为导体的磨屑会造成短路,这就把金属和石墨排除在外了。 First, the conductor can not be used, because the debris will cause a short-circuit conductor, which is the metal and graphite excluded. 其次抛光盘又不能太硬,太硬的盘不能适合硅片表面微量起伏不平的形状,这就把一般的陶瓷材料排除在外了。 Second, polishing can not be too hard, too hard disk does not fit the wafer surface relief micro uneven shape, which the ceramic material generally excluded. 剩下的主要是塑料这一类材料。 The rest are mainly plastic materials in this category. 目前通用的的抛光盘材料是聚氨酯材料,在塑料材料中,聚氨酯具有很高的耐磨性,其成份的可变性形成了机械性能的可调整性。 The current general polishing material is a polyurethane material, in the plastic material, a polyurethane having a high wear resistance, which forms a component variability adjustability of the mechanical properties. 用发泡剂可以很容易地形成多孔的聚氨脂抛光盘。 With a blowing agent can easily form a porous polyurethane polishing.

总体来说,这种抛光盘刚性太差,柔性大的抛光盘能很好地贴合在硅片的微量起伏(小于10个微米)的表面上,因此能够宏观上形成均匀的抛光。 In general, this poor polishing rigid, flexible large polishing fit well on the surface of the wafer fluctuation trace (less than 10 microns), it is possible to form a macroscopically uniform polishing. 但在局部范围内,这种柔性抛光盘具有严重的缺点。 However, in the local area, such a flexible polishing has serious drawbacks. 柔性过大的抛光盘贴合在高低不平,软硬不同的表面上,不仅不能产生如图3所示的平整平面,甚至可能在局部地区形成短路或者断路。 The flexible excessive polishing disc bonded rugged surface on different hardware and software, not only can not produce a flat plane shown in FIG. 3, and may even form a short circuit or open circuit in the local area. 因此提高抛光盘的刚性是提高硅片平面平整化程度的关键。 Thus increasing the rigidity polishing are crucial to improving the degree of planarization of the wafer plane.

Michacl E.Thomas在美国专利5,197,999中提出了一种复合材料多孔抛光盘,这种复合材料由高柔性的多孔材料(例如多孔聚氨酯)为基体,加入大约30%体积比的硬颗粒或纤维做为强化相。 Michacl E.Thomas in U.S. Patent No. 5,197,999 proposes a composite porous polishing, the composite material highly flexible porous material (e.g. porous polyurethane) as the matrix, hard particles or fibers added to approximately 30% by volume as strengthening phase. 这种方法可以大大提高材料的刚性。 This method can greatly improve the rigidity of the material. 但由于强化相的直径太大,会在硅片上造成划伤,所以不能在抛光盘表面露头。 However, due to the strengthening phase diameter is too large, can cause scratches on a silicon wafer, it is not outcrop at surface polishing. 这就限制了这种材料的使用。 This limits the use of this material.

另外有一些人提出了多层材料组成的抛光盘。 There are others proposed polishing multilayered material. Joseph R.Breivogel(美国专利5,212,910)提出了一种三层的抛光盘,第一层是柔性底层,第二层是高硬度的刚性层,第三层是多孔的柔性层,这一层厚0.1至2.0毫米。 Joseph R.Breivogel (U.S. Patent No. 5,212,910) proposes a three-layer polishing, the first layer is a flexible bottom layer, the second layer is a rigid layer of high hardness, the third layer is a porous flexible layer, the thickness of 0.1 to 2.0 mm. 由于第三层是实际执行抛光的表面层,它不可能太厚,不能超过0.1毫米太多。 Since the third layer is a polished surface layer of practical implementation, it can not be too thick, not much more than 0.1 mm. 在抛光过程中,由于抛光盘表面发生损害,需要经常用金刚石盘对它进行表面加工。 In the polishing process, since the polishing surface damage occurs, we often need to use a diamond disc surface processing. 而0.1毫米的厚度比普遍抛光盘的厚度(1.0至2.0毫米)小得太多,因而这种抛光的寿命极短。 But too much thickness of 0.1 mm than the thickness (1.0 to 2.0 mm) polishing disc generally small, and thus such a polishing very short-lived.

John M.Pierce(美国专利5,287,663)也提出类似的多层抛光盘的设计,他提出的柔性抛光层厚度不能超0.003英寸(0.007毫米)。 John M.Pierce (U.S. Patent No. 5,287,663) also made a similar polishing multilayer design, he proposed a flexible polishing layer thickness can not exceed 0.003 inches (0.007 mm). 这就更难提供足够的工作寿命。 It is more difficult to provide adequate working life.

Toshirin KD等人(1995 Internatinal Symplsium onSeminconductor Manufacturing,P214~217),提出一种无孔的高刚性合成树脂抛光盘,这种盘表面上刻有宽0.5毫米,节距2.0毫米的螺纹形沟糟,这种沟糟提供了抛光液流动的通道,这种材料的弹性模量为5GPa,这在塑料材料中是极高的,但也并不能完全满足使用性能的要求。 Toshirin KD et al. (1995 Internatinal Symplsium onSeminconductor Manufacturing, P214 ~ 217), to provide a nonporous highly rigid synthetic resin polishing, width 0.5 mm engraved on such a disk surface, the pitch of 2.0 mm thread-shaped grooves bad, this groove provides a bad flow of the polishing liquid passage, the modulus of elasticity of this material is 5 GPa, in which the plastic material is very high, but it does not fully meet performance requirements.

抛光过程中还有一个问题,那就是硅片的边缘部分比中心部分抛光量大,而抛光盘也相应地呈现不均匀的磨损,这就增加了用金刚石盘对抛光盘进行表面整形加工的需要。 Polishing there is a problem that an edge portion of the wafer than the center portion of the polishing amount, while polishing is correspondingly rendered uneven wear, which increases the need for surface shaping process of polishing with diamond disk .

Laurence D.Schultz(美国专利5,412,769)提出了一种抛光盘的形状设计,这种抛光盘外沿有如齿轮形状,在硅片的横向运动过程中,硅片的外沿部分越出了抛不盘的外沿,处于悬空状态。 Laurence D.Schultz (U.S. Patent No. 5,412,769) proposes to design a shape of the polishing disc, which disc outer edge polishing like a gear shape, the lateral movement of the wafer, the wafer beyond the perimeter of the polishing disk is not the outer edge, is still in limbo. 由于减少了外沿部分与抛光盘摩擦的时间,也就减少了外沿部分厚度的减少。 Since the outer edge portion and reducing the time of polishing friction, thus reducing the outer edge portion of reduced thickness. 这种补偿作用使硅片达到了均匀减薄。 Such compensation wafer reaching a uniform thinning.

本发明的目的在于提供一种新型的用于化学一机械抛光的抛光盘及其制造方法,这种抛光盘在局部范围内能提供与硅片的良好的刚性接触,保证在一块集成片的范围内,提供高度平整化的抛光。 Object of the present invention is to provide a novel optical disk and a polishing method for manufacturing a chemical mechanical polishing, this polishing disc on a local scale to provide good rigid contact with the wafer, in a guaranteed range of the integrated sheet , it offers a high degree of planarization polishing. 在硅片的宏观范围内,这种抛光盘又能提供一定的柔性,以适应硅片表面的微量起伏。 Silicon on a macroscopic scale, this can provide some polishing flexibility to accommodate micro undulating wafer surface. 这种抛光盘的形状设计也保证了硅片内外沿部分的均匀减薄。 The design of such polishing shape also ensures a uniform inner and outer edge portion of the thinned silicon wafer.

本发明的目的是通过选择了六方氮化硼陶瓷材料作为抛光盘材料而实现的。 Object of the present invention is achieved by selecting the hexagonal boron nitride as the ceramic material is achieved polishing material.

众所周知,六方氮化硼(h-BN)具有类似石墨的层状结构,晶胞为六方晶系,在六方平面上,原子紧密排列,由很强的共价健结合在一起,而在六平方面之间,原子由很弱的范德瓦尔力结合在一起,因此在各种性能上,六方氮化硼都表现很强的各向异性。 Known, hexagonal boron nitride (h-BN) having a graphite-like layered structure of the unit cell is hexagonal, the hexagonal plane in closely arranged atoms strongly bonded together by a covalent bond, and six flat between aspect, the atoms bound together weak van der Waals force, so the various properties of hexagonal boron nitride have shown strong anisotropy. 六方氮化硼可以说是工程上使用的唯一的软陶瓷,六方氮化硼烧结体抗弯强度为83MPa,弹性模量为20GPa,这些值虽然大大小于典型的陶瓷(分别为几百MPa和超过一百GPa),但比塑料材料大很多,因此,刚性强的六方氮化硼抛光盘可以比塑料抛光盘为硅片提供更均匀的平整化加工。 Hexagonal boron nitride can be said to be the only use soft ceramic engineering, hexagonal boron nitride sintered body flexural strength of 83MPa, the elastic modulus of 20 GPa, though considerably less than the values ​​typical ceramic (respectively more than a few hundred MPa and one hundred GPa), but much larger than the plastic material, and therefore, a strong rigid hexagonal boron nitride polishing can provide a more uniform processing of the wafer planarization polishing than plastic. 此外六方氮化硼的化学稳定性较好,在抛光过程中,塑料抛光盘与硅片接触的某些部分可能脱水发热而变质,而六方氮化硼抛光盘就不会发生这种现象。 Also good chemical stability of hexagonal boron nitride, during polishing, polishing some parts of plastics may be in contact with the silicon dehydration and heat deterioration, and hexagonal boron nitride polishing discs on this phenomenon does not occur. 还有,六方氮化硼的磨损碎屑不具有塑料屑的粘性,不易于在抛光盘上聚集成团,因此,减少去了用金刚石进行表面加工。 Also, hexagonal boron nitride is non-adhesive plastic wear debris cuttings, not easily accumulated on the polishing disc into a group, therefore, to reduce the surface processing with a diamond.

正是基于六方氮化硼这一适宜的刚性、好化学稳定性,以及磨屑的不粘性,使得本发明的六方氮化硼抛光盘具有优异的性能,特别适用于集成电路的硅片的抛光。 This is based on hexagonal boron nitride of suitable rigidity, chemical stability, non-tackiness and debris such that the hexagonal boron nitride polishing of the present invention have excellent properties, particularly suitable for the polishing of silicon integrated circuits .

本发明用于化学——机械抛光的抛光盘,其特征在于该抛光盘材料是六方氮化硼陶瓷,该六方氮化硼陶瓷材料的孔隙率为20-70%。 The present invention is a chemical - mechanical polishing of polishing, wherein the polishing material is hexagonal boron nitride ceramic, the pores of the hexagonal boron nitride ceramic material was 20-70%.

本发明的用于化学——机械抛光的抛光盘是单层六方氮化硼盘结构,或者由六方氮化硼抛光层、弹性层和底盘组成的三层复合结构。 The present invention is used in a chemical - mechanical polishing polishing disc of hexagonal boron nitride is a single layer structure or a three-layer composite structure consisting of hexagonal boron nitride polishing layer, the elastic layer, and a chassis thereof. 对于三层复合结构,其中的抛光层是由间隔的六方氮化硼磨块组成,该磨块可为多边几何形状,如正方体、六方体等,横向尺寸为10-50mm,高度为2.0-50mm,间距为0.2-5.0mm;弹性层可以是整块弹性垫或者由间隔的弹性块(尺寸相应于磨块尺寸)组成,厚度为0.2-2.0mm,该弹性层可以是橡胶如硅橡胶、塑料等;底盘可以是金属或合金板,如不锈钢板。 For the three-layer composite structure, wherein the polishing layer is composed of hexagonal boron nitride grinding blocks spaced composition, the grinding block may be a polygonal geometries, such as cubes, hexagons, etc., 10-50mm lateral dimension, a height of 2.0-50mm and a pitch of 0.2-5.0 mm; the elastic layer may be a piece of an elastic or elastomeric pad block interval (corresponding to the size of the grinding block size), with a thickness of 0.2-2.0mm, which may be a rubber elastic layer such as silicone rubber, plastics and the like; chassis plate may be metal or alloy, such as stainless steel plate.

本发明的用于化学——机械抛光的抛光盘的形状为圆盘形或者圆环形(环带的径向宽度大于被抛光物直径)。 The present invention for the chemical - mechanical polishing of polishing the shape of a disc-shaped or annular (radial width of the annulus is larger than the diameter of the object of polishing). 圆环形的抛光盘可使硅片的边缘部分和中心部分得到均匀的加工。 Polishing annular edge portion and the central portion can obtain a uniform wafer processing.

本发明的抛光盘所用的六方氮化硼陶瓷中可含有小于100纳米的硬质磨料,该硬质磨料选自SiO2,Si3N4SiC,CeO,Al2O3中的一种或多种。 Hexagonal boron nitride ceramic polishing of the present invention may be used in less than 100 nanometers containing hard abrasive, a hard abrasive selected from the SiO2, Si3N4SiC, CeO, Al2O3 of one or more.

本发明的六方氮化硼陶瓷抛光盘的孔隙率为20-70%,这了为了满足半导体晶片化学——机械抛光的要求,如果孔隙率小于20%,则该抛光盘的不能贮存足够的化学抛光液,也不能充分容纳抛光的磨屑,从而使抛光盘的使用性能下降。 Porosity of hexagonal boron nitride ceramic polishing of the present invention is 20-70%, which in order to meet the semiconductor wafer chemical - mechanical polishing requirements, if the porosity is less than 20%, the polishing is not sufficient chemical reservoir polishing liquid, the polishing is not sufficient to accommodate debris, so that the polishing performance is lowered. 反之,如果孔隙率大于70%,则抛光盘的刚性和强度不够,降低了抛光的使用寿命。 Conversely, if the porosity is greater than 70%, the rigidity and strength of the optical disc throwing insufficient, reducing the life of the polishing. 从六方氮化硼陶瓷块的生产工艺的技术角度来讲,达到孔隙度为20-70%也是最为方便易行的。 From the technical point of view the production process in terms of hexagonal boron nitride ceramic block, to achieve a porosity of 20-70% is the most convenient and easy.

本发明的多孔六方氮化硼抛光盘的制造方法是下列几种方法中的任一种方法:(一)烧结方法:将六方氮化硼陶瓷粉末与添加剂(如硼酸、水)混合,模压成型,于450-2200℃温度下在含氮气氛中烧结,使六方氮化硼颗粒通过固态扩散联接在一起。 A method for producing a porous hexagonal boron nitride polishing of the present invention is a method according to any of the following several methods :( a) sintering methods: The hexagonal boron nitride ceramic powder with additives (such as boric acid, water), molding sintering at a temperature of 450-2200 ℃ in nitrogen-containing atmosphere, so that hexagonal boron nitride particles coupled together by solid state diffusion.

(二)聚合交联方法:将六方氮化硼陶瓷粉末与可聚合交联的高分子材料(例如聚氨酯粘接剂和硅烷偶联剂)混合,之后模压成型,再进行热处理(温度:室温-200℃)进行聚合交联后即形成多孔的六方氮化硼。 (B) cross-linking method: mixing a ceramic powder of hexagonal boron nitride and a polymer material (e.g. a polyurethane adhesive and a silane coupling agent) may be post-polymerization crosslinking, after molding, and then subjected to heat treatment (temperature: room temperature - 200 ℃) after crosslinking polymerization to form a porous hexagonal boron nitride.

(三)发泡、聚合交联方法:将六方氮化硼陶瓷粉末与可聚合交联的高分子材料和发泡剂混合,模压成型,进行热处理(温度:室温-200℃),经聚合交联和发泡后即形成多孔的六方氮化硼陶瓷。 (C) a foamed, cross-linking method: The hexagonal boron nitride ceramic powder with a polymerizable crosslinkable polymer material and blowing agent, molding, heat treatment (temperature: room temperature -200 deg.] C), polymerized cross linking and foaming after the formation of the porous hexagonal boron nitride ceramics.

对于三层复合结构的抛光盘来说,首先按上述任一方法制造出磨块,然后将磨块、弹性层和底盘粘接在一起。 For the polishing of the three-layer composite structure, the first by any of the methods for producing a block mill, and then grinding blocks, chassis and the elastic layer are bonded together.

对于含硬质磨料的抛光盘,其制造方法是首先将硬质磨料与六方氮化硼瓷粉末混合,然后再用上述方法制成抛光盘。 For hard abrasive containing polishing, which manufacturing method is first mixed with the hexagonal boron nitride abrasive hard porcelain powder, then use is made of the above-described polishing method.

下面实施例中结合附图详细说明本发明抛光盘几种例举性(非限定性)的结构和形状,以及相应的制造方法。 The present invention is exemplified by several polishing (non-limiting) structure and shape, and corresponding method of manufacturing a detailed description of the following embodiments in conjunction with the accompanying drawings.

图1是包含多个集成片的硅片示意图,其中11-硅片,12-集成片,13-高密度区,14-低密度区。 1 is a schematic integrated sheet comprising a plurality of silicon, wherein the silicon 11-, 12- integrated on-chip, 13 high-density region, 14 low density region.

图2是带有金属花样及沉积的绝缘层的硅片的示意图,其中20-硅片,21-绝缘层,22-金属层。 FIG 2 is a schematic view of a silicon wafer with an insulating layer and a metal pattern deposited, wherein the silicon wafer 20, insulating layer 21, the metal layer 22-.

图3是经平整化抛光处理后的硅片的示意图,其中30-硅片,31-绝缘层,32-金属层。 FIG 3 is a planarized silicon wafer after the polishing process schematic, wherein the silicon 30-, 31- insulating layer, a metal layer 32-.

图4是化学机械抛光工艺所用的抛光装置示意图,其中41-旋转台,42-旋转轴,43-抛光盘,44-硅片,45-夹具,46-加压旋转平移机构。 FIG 4 is a schematic view of a polishing apparatus used for a chemical mechanical polishing process, wherein the turntable 41-, 42- rotating shaft, polishing 43-, 44- silicon, 45- jig, the pressing 46- rotational translation mechanism.

图5是本发明的圆盘形单层结构的抛光盘示意图,其中51-抛光盘,52-硅片,53-夹具,54-加压、旋转和平移机构。 FIG 5 is a schematic view of polishing a disc-shaped single-layer structure of the present invention, wherein polishing 51-, 52- silicon, 53- jig, 54- pressure, rotation and translation mechanism.

图6是本发明的圆环形单层结构的抛光盘示意图,其中61-抛光盘,62-硅片,63-夹具,64-加压,旋转和平移机构。 FIG 6 is a schematic view of an annular polishing layer structure of the present invention, wherein polishing 61-, 62- silicon, 63- jig, 64- pressure, rotation and translation mechanism.

图7是本发明的一种三层结构的抛光盘的剖面示意图,其中71-底盘,72-弹性层,73-抛光层。 7 is a schematic cross-sectional view of a three-layer polishing structure of the present invention, wherein the chassis 71-, 72- elastic layer 73- polishing layer.

图8是本发明的另一种三层结构的抛光盘的剖面示意图,其中81-底盘、82-弹性层,83-抛光层。 8 is a schematic cross-sectional view of another polishing three-layer structure of the present invention, wherein the chassis 81-, 82- elastic layer 83- polishing layer.

实施例1参照图5,将六方氮化硼粉末(平均粒度为0.5微米)与水混合后,模压成型为直径100mm的高10mm圆盘,于1900℃烧结3小时,则制得抛光盘。 Example 1 Referring to the FIG. 5, the hexagonal boron nitride powder are mixed (average particle size 0.5 microns) and water embodiment, molding, sintering for 3 hours at 1900 deg.] C a disk having a diameter of 100mm 10mm high, the prepared polishing. 检测结果,孔隙率53%,弹性模量6.9GPa,断裂强度:7.0MPa. A detection result, a porosity of 53%, an elastic modulus of 6.9 GPa, a breaking strength: 7.0MPa.

实施例2参照图6,将六方氮化硼粉末(粒度为2.0微米)与5%(重量)SiC颗粒(粒度为60纳米)混合后,再与水混合,模压成型为外径为100mm内径为40mm高6mm的圆环形盘,于1 800℃烧结4小时,则制得图6所示抛光盘。 Example 2 Referring to Figure 6, the inner diameter of 100mm hexagonal boron nitride powder (particle size 2.0 microns) and 5% (by weight) the SiC particles (particle size of 60 nm) are mixed, then mixed with water, for the molding of an outer diameter 40mm and 6mm high circular disc sintered at 1 800 ℃ 4 hours, to obtain the optical disk 6 shown in FIG polishing. 检测结果:孔隙率:47%,弹性模量: 8.8GPa,断裂强度:11.8MPa。 Test Results: porosity: 47%, elastic modulus: 8.8 GPa, a breaking strength: 11.8MPa.

实施例3参照图7,将六方氮化硼粉末(粒度3.0微米)与10%(重量)聚氨脂粘接剂和5%(重量)硅烷偶联剂搅拌混合成膏状,于70℃干燥30分钟之后模压成尺寸为20mm×20mm×20mm的正方体磨块,于150℃处理20分钟,用粘接剂将磨块粘接在厚2mm硅胶弹性垫上,再粘接在厚1.5mm不锈钢板上,磨块间的间距为2mm,即制得如图7所示的抛光盘,磨块的检测结果为:孔隙率50%,弹性模量6.0GPa,断裂强度:7.0MPa。 Example 3 Referring to FIG. 7 embodiment, the hexagonal boron nitride powder (particle size 3.0 microns) and 10% (by weight) polyurethane binder and 5% (by weight) Silane coupling agent mixture was stirred into a paste, and dried at 70 deg.] C after 30 minutes cube molded into dimensions of 20mm × 20mm × 20mm grinding block, the process at 150 ℃ 20 minutes, the adhesive pad adhered to the grinding block 2mm thick silica gel elasticity, and then bonded to 1.5mm thick stainless steel plate spacing between the grinding block 2mm, i.e., polishing was prepared as shown in FIG. 7, the detection result of the grinding block is: a porosity of 50%, an elastic modulus of 6.0 GPa, a breaking strength: 7.0MPa.

实施例4参照图8,将六方氮化硼粉末(粒度3.0微米)与5%(重量)SiO2粉末(粒度80纳米)混合,再与3%(重量)发泡剂、10%(重量)聚氨酯和3%(重量)硅烷偶联剂混合,于80℃干燥20分钟之后,模压成30×30×10mm的六方体磨块,并于140℃热处理30分钟。 Example 4 embodiment with reference to FIG. 8, the hexagonal boron nitride powder (particle size 3.0 microns) and 5% (by weight) SiO2 powder (particle size 80 nm) were mixed, and then with 3% (wt.) Foaming agent, 10% (by weight) Polyurethane and 3% (by weight) mixing a silane coupling agent, after drying at 80 ℃ 20 minutes, and molded into a grinding block hexagonal body 30 × 30 × 10mm, and the heat treatment at 140 ℃ 30 minutes. 用粘接剂将每一磨块与30×30×1mm的硅胶弹性垫粘接在一起,再用粘接剂将其粘接在1mm厚的不锈钢板上,即制得如图8所示的抛光盘。 Each mill with an adhesive silicone elastomer block 30 × 30 × 1mm pad are bonded together, then it was bonded to the adhesive 1mm thick stainless steel plate, i.e. prepared as shown in FIG. 8 polishing discs. 对磨块的检测结果:孔隙率42%,弹性模量:5.0GPa,断裂强度6.0MPa。 Detection result of the grinding block: a porosity of 42%, an elastic modulus: 5.0 GPa, a breaking strength 6.0MPa.

本发明的抛光盘的结构和形状可以有除上述实施例之外的多种变化和组合,例如三层复合结构中的磨块可拼装成圆环状。 Structure and shape of the polishing of the present invention may have numerous variations and combinations other than the above embodiments, for example, grinding blocks three-ply composite structure may be assembled into an annular shape.

本发明采用六方氮化硼多孔陶瓷材料制造抛光盘,具有对半导体元件——集成片抛光最适宜的综合性能,大大提高了抛光盘的寿命,提高了半导体器件的生产率和质量水平。 The present invention uses a porous ceramic material of hexagonal boron nitride polishing, the semiconductor element having - Integrated Polishing optimum overall performance, greatly improving the life of the polishing disc, to improve productivity and quality of the semiconductor device.

Claims (9)

1.一种用于化学——机械抛光的抛光盘,其特征在于该抛光盘材料是六方氮化硼陶瓷,该六方氮化硼陶瓷材料的孔隙率为20-70%。 1. A method for chemical - mechanical polishing of polishing, wherein the polishing material is hexagonal boron nitride ceramic, the pores of the hexagonal boron nitride ceramic material was 20-70%.
2.根据权利要求1的用于化学——机械抛光的抛光盘,其特征在于该抛光盘是单层六方氮化硼盘结构,或者是由六方氮化硼抛光层、弹性层和底盘组成的三层复合结构。 According to claim 1 for the chemical - mechanical polishing polishing disk, characterized in that the polishing disc is a single layer disc structure hexagonal boron nitride, hexagonal boron nitride or the polishing layer, the elastic layer composed of a chassis and three-layer composite structure.
3.根据权利要求1的用于化学——机械抛光的抛光盘,其特征在于该抛光盘的形状是圆盘形或者圆环形。 According to claim 1 for the chemical - mechanical polishing of polishing, wherein the polishing disc shape is circular or annular.
4.根据权利要求2的用于化学——机械抛光的抛光盘,其特征在于所述的抛光层是由间隔的六方氮化硼磨块组成,所述的弹性层是整块弹性垫或者由间隔的弹性块组成。 According to claim 2 for the chemical - mechanical polishing of polishing, wherein the polishing layer is spaced from the hexagonal boron nitride grinding block composed of the elastic layer is an elastic piece or pad of spaced resilient block composition.
5.根据权利要求4的用于化学——机械抛光的抛光盘,其特征在于所述磨块是多边几何形状,横向尺寸为10-50mm,高度为2.0-50mm,间距为0.2-5.0mm。 According to claim 4 for the chemical - mechanical polishing of polishing, wherein said grinding block multilateral geometry, 10-50mm lateral dimension, a height of 2.0-50mm, a pitch of 0.2-5.0mm.
6.根据权利要求1-5中的任一种用于化学——机械抛光的抛光盘,其特征在于其中所述的六方氮化硼陶瓷中含有尺寸小于100纳米的硬质磨料。 Mechanical polishing of the polishing disk, characterized in that said hexagonal boron nitride-containing ceramic size of less than 100 nanometers hard abrasive - according to any of claims 1-5 for a chemical.
7.根据权利要求6的用于化学——机械抛光的抛光盘,其特征在于所述的硬质磨料选自SiO2,Si3N4,SiC,CeO,Al2O3中的一种或多种。 Mechanical polishing polishing, wherein said hard abrasive selected from SiO2, Si3N4, SiC, CeO, Al2O3 of one or more - 7. A chemical according to claim 6.
8.一种用于化学——机械抛光的抛光盘的制造方法,该抛光盘由六方氮化硼陶瓷材料组成,孔隙率为20-70%,其特征在于该方法是下述烧结方法、聚合交联方法或者发泡聚合交联方法中的任一种方法:烧结方法:将六方氮化硼陶瓷粉末与添加剂混合,模压成型,于450-2200℃温度下在含氮气氛中烧结;聚合交联方法:将六方氮化硼陶瓷粉末和可聚合交联的高分子材料混合,模压成型,再进行热处理,温度为室温-200℃;发泡聚合交联方法:将六方氮化硼陶瓷粉末与可聚合交联的高分子材料及发泡剂混合,模压成型,进行热处理,温度为室温-200℃。 8. A method for chemical - mechanical polishing method for producing the polishing, the polishing by the hexagonal boron nitride ceramic material, a porosity of 20-70%, characterized in that the method is a method of sintering, polymerization the method of any of the crosslinked foamed or cross-linking method: sintering: the hexagonal boron nitride ceramic powder is mixed with additives, molding, sintering in a nitrogen atmosphere at a temperature of 450-2200 ℃; polymeric cross linking method: the hexagonal boron nitride ceramic powder and mixing the polymer material may be post-polymerization crosslinking, compression molding, and then subjected to heat treatment temperature is room temperature -200 deg.] C; cross-linking foaming method: the ceramic powder and hexagonal boron nitride polymer material may be a foaming agent and cross-linking, molding, heat treatment temperature is room temperature -200 ℃.
9.根据权利要求8的制造方法,其特征在于六方氮化硼陶瓷粉末中混合有小于100纳米的硬质磨料。 The production method according to claim 8, wherein the hexagonal boron nitride is mixed with ceramic powder of less than 100 nanometers hard abrasive.
CN 97116804 1997-08-26 1997-08-26 Polishing disc for chemical-mechanical polishing and making method CN1060424C (en)

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Cited By (7)

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CN100551624C (en) 2005-01-31 2009-10-21 三芳化学工业股份有限公司 Adsorption sheet for fixing polishing substrate and its manufacturing method and polishing device
CN104263318A (en) * 2014-04-24 2015-01-07 沈衡平 Diamond abrasive of elastic abrasion block used for grinding and polishing nonmetal concave and convex surfaces
CN104684686A (en) * 2012-08-02 2015-06-03 3M创新有限公司 Abrasive elements with precisely shaped features, abrasive articles fabricated therefrom and methods of making thereof
CN104736300A (en) * 2012-10-20 2015-06-24 纳腾股份有限公司 Grindstone and grinding/polishing device using same
CN105150090A (en) * 2015-08-19 2015-12-16 南京航空航天大学 Sapphire ball cover grinding tool based on controlled structure CVD diamond film
CN106956212A (en) * 2017-03-17 2017-07-18 衢州学院 A kind of aluminium nitride chip polishing method of use chemical polishing solution and ceramic polished disk
CN108188865A (en) * 2018-03-16 2018-06-22 中国工程物理研究院激光聚变研究中心 A kind of laser crystal burnishing device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100551624C (en) 2005-01-31 2009-10-21 三芳化学工业股份有限公司 Adsorption sheet for fixing polishing substrate and its manufacturing method and polishing device
CN104684686A (en) * 2012-08-02 2015-06-03 3M创新有限公司 Abrasive elements with precisely shaped features, abrasive articles fabricated therefrom and methods of making thereof
CN104736300A (en) * 2012-10-20 2015-06-24 纳腾股份有限公司 Grindstone and grinding/polishing device using same
CN104263318A (en) * 2014-04-24 2015-01-07 沈衡平 Diamond abrasive of elastic abrasion block used for grinding and polishing nonmetal concave and convex surfaces
CN105150090A (en) * 2015-08-19 2015-12-16 南京航空航天大学 Sapphire ball cover grinding tool based on controlled structure CVD diamond film
CN106956212A (en) * 2017-03-17 2017-07-18 衢州学院 A kind of aluminium nitride chip polishing method of use chemical polishing solution and ceramic polished disk
CN108188865A (en) * 2018-03-16 2018-06-22 中国工程物理研究院激光聚变研究中心 A kind of laser crystal burnishing device
CN108188865B (en) * 2018-03-16 2020-01-10 中国工程物理研究院激光聚变研究中心 Laser crystal polishing device

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