CN117458262B - Modulation system of external cavity semiconductor blue laser - Google Patents
Modulation system of external cavity semiconductor blue laser Download PDFInfo
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- CN117458262B CN117458262B CN202311593474.7A CN202311593474A CN117458262B CN 117458262 B CN117458262 B CN 117458262B CN 202311593474 A CN202311593474 A CN 202311593474A CN 117458262 B CN117458262 B CN 117458262B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0427—Electrical excitation ; Circuits therefor for applying modulation to the laser
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/041—Optical pumping
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- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0604—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium comprising a non-linear region, e.g. generating harmonics of the laser frequency
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
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Abstract
The invention belongs to the technical field of lasers, and particularly discloses a modulation system of an external cavity semiconductor blue laser, which comprises a first electric driving unit, a second electric driving unit, a bias pump, a modulation pump, a semiconductor gain chip, an output mirror, a frequency doubling crystal and a rear end mirror, wherein the first electric driving unit is used for driving the bias pump to emit bias pump light, and the second electric driving unit is used for driving the modulation pump to emit modulation pump light. The technical scheme adopts a double-pumping technology, converts the structural contradiction that bias current and modulation current are difficult to be overlapped under high-frequency high-power modulation faced in circuit design into a feasible technical scheme of light and light superposition, and solves the technical problem of high-frequency high-power modulation of a blue light VECSEL carrier light source.
Description
Technical Field
The invention belongs to the technical field of lasers, and particularly relates to a modulation system of an external cavity semiconductor blue laser.
Background
The Underwater Wireless Optical Communication (UWOC) technology has the advantages of flexible layout, high communication rate, good confidentiality and the like, and is one of key technologies for exploring and developing vast ocean resources. Limited by the influence of seawater absorption, scattering and the like, the optical carrier wave decays fast when propagating in the seawater, and the communication link of UWOC is usually of the order of hundreds of meters at present, so that the requirements of a plurality of application scenes are difficult to meet. The improvement of UWOC communication link length can be further improved in the aspects of carrier wave wavelength, carrier beam quality, carrier power, transmitting end modulation mode, receiving end demodulation scheme and the like.
Related researches show that 488 nm-band blue light has a relatively minimum attenuation coefficient in seawater, and is an ideal carrier light source of UWOC. Compared with a solid laser and an optical fiber laser, the vertical external cavity semiconductor laser (VECSEL) can flexibly design the wavelength of infrared laser by utilizing semiconductor energy band engineering, can be precisely matched with the ocean environment by utilizing an intracavity frequency doubling technology, and realizes the laser output of a blue light wave band. In addition, compared with a semiconductor blue laser diode, the VECSEL with the external cavity structure is convenient for adjusting the optical resonant cavity structure, realizes near-diffraction limit light beam quality output, has concentrated light spot energy and small emission angle, is favorable for reducing the attenuation effect of a propagation path and realizes optical communication at a longer link distance. Additionally, increasing the output power of the laser (e.g., increasing the output power of the laser by an order of magnitude) also increases UWOC the communication distance. In summary, the blue light VECSEL with high power fundamental mode beam quality is an important carrier light source for UWOC.
As shown in FIG. 4, when the pump laser 8 exceeds the threshold power, the laser resonant cavity generates 976nm fundamental frequency light, and 488nm blue light output is generated by using the intracavity frequency doubling crystal, and the near diffraction limit beam quality can be obtained by optimizing the resonant cavity structure and controlling the laser transverse mode by using the external cavity mirror. For the carrier light source UWOC, the modulation mode and the modulation frequency also need to be considered. Since the laser frequency is high, in spatial optical communication, an optical intensity modulation mode is generally employed. Light intensity modulation can be divided into three basic methods, namely, extra-cavity modulation, amplified seed light source technology and direct modulation of electric drive pump light intensity. The extra-cavity modulation can typically employ both electro-optic modulation and acousto-optic modulation techniques, where electro-optic modulation requires polarization and polarization-maintaining optical elements to cooperate, and modulation requires voltages of several hundred volts, with modulation bandwidths typically below megahertz. The baseband bandwidth of the acousto-optic modulation can reach tens of megameters, but the modulation efficiency and the bearable carrier power are limited, and the expansion of the UWOC communication link length is limited. The seed light amplification technology is generally used for fundamental frequency laser, and for frequency multiplication blue light carrier application, the optical system is complex and the efficiency is low. The energy level relaxation time of the gallium arsenic-based material in the VECSEL is nanosecond, the direct modulation response of the gallium arsenic-based material to the pump light is fast, and the modulation requirement can be met in tens of megahertz, so that the application requirement can be met by carrying out high-frequency high-power electric driving on the pump laser diode. Fig. 5 is a graph showing the efficiency of converting pump light into blue light in the case of single pump, wherein the pump power of the laser diode is about 25W when taking 3W as an example of carrier power, and the required electric driving power exceeds 60W in consideration of the electro-optical conversion characteristic of the laser diode. Meanwhile, the relaxation characteristic of energy accumulation exists in the laser cavity, the duty ratio of pump laser is not lower than 50 percent, and the pump laser is limited by the performance of a high-frequency power adjusting tube device, so that the driving circuit is difficult to realize. Fig. 6 is a schematic diagram of a typical structure of a conventional electric driving unit, where LD is a high-power laser diode and resistor R1 acts as a current limiter. When the baseband signal is 0, the adjusting tube is disconnected from the main loop, and a bypass formed by the resistor R2 maintains bias current to drive the LD to generate bias pumping power. When the baseband signal is 1, the adjusting tube is saturated and conducted, and the current flowing through the LD is increased to form a modulation driving current. In specific application, the circuit has the difficult problem of R2 value, the value is too large, the thermal effect is very serious, and the good layout and heat dissipation of the system are difficult to realize. When the value of R2 is too small, a local loop formed by R2 and an adjusting tube can generate serious ringing effect when the state of the adjusting tube changes, the effect can distort a modulation signal, the modulation rate is limited to be improved, and meanwhile, the induced voltage spike can damage the LD. Experiments show that the larger the R2 value is, the weaker the ringing effect is, so that the modulation current and the bias current are separated in the best method for realizing high-speed high-current modulation of ten megahertz. While separate modulation currents and modulation currents may be combined to drive the LD using a bias circuit, the bulk of the high power bias circuit may increase significantly while limiting the modulation frequency.
Disclosure of Invention
The invention aims to provide a modulation system of an external cavity semiconductor blue laser, which provides a feasible technical scheme for realizing UWOC video transmission of a hundreds of meters order communication link.
In order to achieve the above purpose, the technical scheme of the invention is as follows: the modulation system of the external cavity semiconductor blue laser comprises a first electric driving unit, a second electric driving unit, a bias pump, a modulation pump, a semiconductor gain chip, an output mirror, a frequency doubling crystal and a rear end mirror, wherein the first electric driving unit is used for driving the bias pump to generate bias pump light, and the second electric driving unit is used for driving the modulation pump to generate modulation pump light; the bias pump light and the modulation pump light are both radiated to the semiconductor gain chip; the semiconductor gain chip is of a multiple quantum well structure, and can generate stimulated radiation after absorbing pumping laser so as to amplify the circulating laser in the cavity; the semiconductor gain chip, the output mirror and the rear end mirror form a laser resonant cavity; the frequency doubling crystal is arranged between the output mirror and the rear end mirror, and converts fundamental frequency light in the laser resonant cavity into blue light by utilizing a nonlinear effect; the output mirror is plated with a high-reflection film for reflecting fundamental frequency light and a high-transmission film for transmitting frequency doubling light, and is used for transmitting blue light.
Further, the semiconductor gain chip is mounted on a composite heat sink for heat dissipation and temperature control.
Further, the second electric drive unit includes an input circuit and a modulation circuit; the modulation circuit comprises a high-frequency power adjusting tube, and the modulation pump adopts a modulation laser diode; the input circuit is used for providing constant voltage, the positive electrode of the input circuit is connected with a current limiting resistor and the positive electrode of the modulation laser diode in series, the negative electrode of the modulation laser diode is connected with one side of the high-frequency power adjusting tube, and the other side of the high-frequency power adjusting tube is connected back to the negative electrode of the input circuit; the on-off of the modulation circuit is controlled by a control signal.
Further, the input circuit comprises a constant voltage power supply, and the constant voltage power supply is connected with the current limiting resistor.
Further, the modulation circuit further comprises a modulation signal source, wherein the modulation signal source is used for sending a control signal to the high-frequency power adjusting tube and controlling the on-off of the high-frequency power adjusting tube.
And the two groups of pump light collimation and focusing systems respectively correspond to the bias pump and the modulation pump and are used for carrying out collimation and focusing on the bias pump light and the modulation pump light.
The system comprises a pump light beam combiner and a pump light collimation focusing system, wherein the pump light beam combiner is used for combining offset pump light and modulated pump light, and the pump light collimation focusing system is used for collimating and focusing the pump light after beam combination.
Further, the resistance value of the current limiting resistor is 0.1 omega-0.5 omega.
Further, the first driving unit adopts a constant current source.
The working principle of the technical scheme is as follows: the pump power is divided into two parts, namely bias pump power and modulation pump power, if the power modulation range of the output blue light is P1 to P2, and the pump power corresponding to P1 and P2 is P3 and P4, the bias pump power can be set as P3, and the modulation pump peak power is P4-P3, so that the performance requirement on the adjusting tube can be reduced.
The beneficial effects of this technical scheme lie in: the technical scheme adopts a double-pumping technology, converts the structural contradiction that bias current and modulation current are difficult to be overlapped under high-frequency high-power modulation faced in circuit design into a feasible technical scheme of light and light superposition, and solves the technical problem of high-frequency high-power modulation of a blue light VECSEL carrier light source. For bias pumping, a conventional constant current source can be used for driving, the efficiency is up to more than 95%, and the thermal effect is very low. The modulation pump is driven by the second electric driving unit in the technical scheme, namely, the bypass resistor R2 is removed, the bias pump function is not considered, and the benefits brought by the circuit structure change are mainly as follows: the thermal effect of the driving circuit is greatly reduced; the ringing effect of the system is suppressed and the quality of the modulated signal is improved. The technical scheme provides a feasible technical scheme for realizing UWOC video transmission of hundreds of meters of order communication links, and can be widely applied to the fields of ocean underwater laser communication, underwater laser measurement and the like.
Drawings
FIG. 1 is a schematic diagram of a first optical path of a modulation system of an external cavity semiconductor blue laser according to the present invention;
FIG. 2 is a schematic diagram of a second optical path of a modulation system of an external cavity semiconductor blue laser according to the present invention;
FIG. 3 is a schematic diagram of a second electrical drive unit in a modulation system of an external cavity semiconductor blue laser according to the present invention;
FIG. 4 is a diagram of a prior art blue light VECSEL structure;
FIG. 5 is a graph showing the efficiency of converting pump light into blue light for a single pump;
fig. 6 is a schematic diagram of a conventional electric drive unit.
Detailed Description
The following is a further detailed description of the embodiments:
Reference numerals in the drawings of the specification include: the semiconductor gain chip comprises a composite heat sink 1, a semiconductor gain chip 2, bias pump light 3, modulated pump light 4, an output mirror 5, a frequency doubling crystal 6, a rear end mirror 7 and pump laser 8.
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
An example is substantially as shown in figure 1: the modulation system of the external cavity semiconductor blue laser comprises a first electric driving unit, a second electric driving unit, a bias pump (adopting a bias laser diode), a modulation pump (adopting a high-power modulation laser diode LD), a semiconductor gain chip 2, an output mirror 5, a frequency doubling crystal 6 and a rear end mirror 7, wherein the first electric driving unit is used for driving the bias pump to generate bias pump light 3, and the first electric driving unit is a conventional constant current source. The second electric drive unit is used for driving the modulated pump to generate modulated pump light 4. Both bias pump light 3 and modulated pump light 4 radiate onto the same area of the semiconductor gain chip 2; the semiconductor gain chip 2 has a multiple quantum well structure, and can generate stimulated radiation after absorbing pumping laser to amplify the circulating laser in the cavity. The semiconductor gain chip 2 is mounted on the composite heat sink 1, and the composite heat sink 1 is used for heat dissipation and temperature control. The semiconductor gain chip 2, the output mirror 5 and the back-end mirror 7 constitute a laser resonator, and specifically, the semiconductor gain chip 2 includes a reflecting mirror, an active region and a barrier layer which are sequentially disposed, and the reflecting mirror, the output mirror 5 and the back-end mirror 7 of the semiconductor gain chip 2 constitute a laser resonator. The surface of the output mirror 5 is coated with a high reflection film of fundamental frequency light for reflecting the fundamental frequency light, and the output mirror 5 is used for reflecting the fundamental frequency light to the rear end mirror 7. A frequency doubling crystal 6 is arranged between the output mirror 5 and the rear end mirror 7, and the frequency doubling crystal 6 converts fundamental frequency light in the laser resonant cavity into blue light by utilizing a nonlinear effect. The rear end mirror 7 is coated with a high reflection film for reflecting laser, the output mirror 5 is also coated with a blue light high transmission film for transmitting blue light, and the output mirror 5 can transmit blue light.
As shown in fig. 3, the second electric drive unit includes an input circuit and a modulation circuit; the input circuit is used for providing constant voltage, and the input circuit at least comprises a constant voltage power supply, and certainly, the constant voltage power supply can be connected with a plurality of capacitors in parallel to realize the constant voltage function. The on-off of the modulation circuit is controlled by a control signal, and the modulation circuit comprises a modulation signal source and a high-frequency power adjusting tube (such as a GaN MOS tube). The positive pole of the input circuit is connected in series with a current limiting resistor R1 and the anode of a modulation Laser Diode (LD), the cathode of the modulation Laser Diode (LD) is connected with one side of a high-frequency power adjusting tube, and the other side of the high-frequency power adjusting tube is connected back to the negative pole of the input circuit. The modulation signal source is used for sending a control signal to the high-frequency power adjusting tube and controlling the on-off of the high-frequency power adjusting tube. The resistance value of the current limiting resistor R1 is 0.1 omega-0.5 omega.
The collimating and focusing schemes of the bias pump light 3 and the modulated pump light 4 in the system can be divided into two types, one is to provide two groups of pump light collimating and focusing systems, and the two groups of pump light collimating and focusing systems respectively correspond to the bias pump and the modulated pump and are used for collimating and focusing the bias pump light 3 and the modulated pump light 4, as shown in fig. 1. The other is to provide a pump beam combiner 9 and a set of pump light collimation focusing system, wherein the pump beam combiner 9 is used for combining the offset pump light 3 and the modulated pump light 4, and the pump light collimation focusing system is used for collimating and focusing the pump light after beam combination, as shown in fig. 2.
The specific implementation process is as follows:
The pump power is divided into two parts, namely bias pump power and modulation pump power, if the power modulation range of the output blue light is P1 to P2, and the pump power corresponding to P1 and P2 is P3 and P4, the bias pump power can be set as P3, and the modulation pump peak power is P4-P3, so that the performance requirement on the adjusting tube can be reduced. For example, the modulation power ranges from 1W to 3W, as shown in fig. 5, where the corresponding pump powers are about 15W and 25W, respectively. Based on this, the pump power can be divided into two parts, namely bias pump power and modulation pump power, in the above application scenario, the bias pump power is 15W, and the modulation pump peak power is 10W. After the treatment by the method, the performance requirement of the high-frequency power adjusting tube is reduced to 40% of the original performance requirement.
The technical scheme adopts a double-pumping technology, converts the structural contradiction that bias current and modulation current are difficult to be overlapped under high-frequency high-power modulation faced in circuit design into a feasible technical scheme of light and light superposition, solves the technical problem of high-frequency high-power modulation of a blue light VECSEL carrier light source, and can greatly prolong the transmission distance of a laser carrier under water by utilizing excellent beam quality of the blue light VECSEL carrier. For bias pumping, a conventional constant current source can be used for driving, the efficiency is up to more than 95%, and the thermal effect is very low. The modulation pump is driven by the second electric driving unit in the technical scheme, namely, the bypass resistor R2 is removed, the bias pump function is not considered, and the benefits brought by the circuit structure change are mainly as follows: the thermal effect of the driving circuit is greatly reduced; the ringing effect of the system is suppressed and the quality of the modulated signal is improved. With the development of electronic component technology, an adjusting tube with higher bandwidth and power is adopted in the later stage, and the modulation frequency and the modulation power of the blue light VECSEL can be further improved. The technical scheme provides a feasible technical scheme for realizing UWOC video transmission of hundreds of meters of order communication links, and can be widely applied to the fields of ocean underwater laser communication, underwater laser measurement and the like.
It is noted that relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus.
The foregoing is merely an embodiment of the present application, and a specific structure and characteristics of common knowledge in the art, which are well known in the scheme, are not described herein, so that a person of ordinary skill in the art knows all the prior art in the application date or before the priority date, can know all the prior art in the field, and has the capability of applying the conventional experimental means before the date, and a person of ordinary skill in the art can complete and implement the present embodiment in combination with his own capability in the light of the present application, and some typical known structures or known methods should not be an obstacle for a person of ordinary skill in the art to implement the present application. It should be noted that modifications and improvements can be made by those skilled in the art without departing from the structure of the present application, and these should also be considered as the scope of the present application, which does not affect the effect of the implementation of the present application and the utility of the patent. The protection scope of the present application is subject to the content of the claims, and the description of the specific embodiments and the like in the specification can be used for explaining the content of the claims.
Claims (9)
1. The modulation system of the external cavity semiconductor blue laser is characterized in that: the device comprises a first electric driving unit, a second electric driving unit, a bias pump, a modulation pump, a semiconductor gain chip (2), an output mirror (5), a frequency doubling crystal (6) and a rear end mirror (7), wherein the first electric driving unit is used for driving the bias pump to generate bias pump light (3), and the second electric driving unit is used for driving the modulation pump to generate modulation pump light (4); both the bias pump light (3) and the modulation pump light (4) radiate to the semiconductor gain chip (2); the semiconductor gain chip (2) is of a multiple quantum well structure, and can generate stimulated radiation after absorbing pumping laser so as to amplify the circulating laser in the cavity; the semiconductor gain chip (2), the output mirror (5) and the rear end mirror (7) form a laser resonant cavity; the frequency doubling crystal (6) is arranged between the output mirror (5) and the rear end mirror (7), and the frequency doubling crystal (6) converts fundamental frequency light in the laser resonant cavity into blue light by utilizing a nonlinear effect; the output mirror (5) is plated with a high reflection film for reflecting fundamental frequency light and a high transmission film for transmitting frequency doubling light, and the output mirror (5) is used for transmitting blue light.
2. The modulation system of an external cavity semiconductor blue laser of claim 1, wherein: the semiconductor gain chip (2) is arranged on the composite heat sink (1), and the composite heat sink (1) is used for radiating heat and controlling temperature.
3. The modulation system of an external cavity semiconductor blue laser of claim 1, wherein: the second electric drive unit comprises an input circuit and a modulation circuit; the modulation circuit comprises a high-frequency power adjusting tube, and the modulation pump adopts a modulation laser diode; the input circuit is used for providing constant voltage, the positive electrode of the input circuit is connected with a current limiting resistor and the positive electrode of the modulation laser diode in series, the negative electrode of the modulation laser diode is connected with one side of the high-frequency power adjusting tube, and the other side of the high-frequency power adjusting tube is connected back to the negative electrode of the input circuit; the on-off of the modulation circuit is controlled by a control signal.
4. A modulation system for an external cavity semiconductor blue laser according to claim 3, wherein: the input circuit comprises a constant voltage power supply which is connected with the current limiting resistor.
5. A modulation system for an external cavity semiconductor blue laser according to claim 3, wherein: the modulation circuit also comprises a modulation signal source, and the modulation signal source is used for sending a control signal to the high-frequency power adjusting tube and controlling the on-off of the high-frequency power adjusting tube.
6. The modulation system of an external cavity semiconductor blue laser of claim 1, wherein: the system also comprises two groups of pump light collimation focusing systems, wherein the two groups of pump light collimation focusing systems respectively correspond to the bias pump and the modulation pump and perform collimation focusing on the bias pump light (3) and the modulation pump light (4).
7. The modulation system of an external cavity semiconductor blue laser of claim 1, wherein: the device also comprises a pump light combiner (9) and a pump light collimation focusing system, wherein the pump light combiner (9) is used for combining the offset pump light (3) and the modulated pump light (4), and the pump light collimation focusing system is used for carrying out collimation focusing on the pump light after beam combination.
8. The modulation system of the external cavity semiconductor blue laser according to claim 4, wherein: the resistance value of the current limiting resistor is 0.1 omega-0.5 omega.
9. The modulation system of an external cavity semiconductor blue laser of claim 1, wherein: the first electric driving unit adopts a constant current source.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20070074750A (en) * | 2006-01-10 | 2007-07-18 | 삼성전자주식회사 | Vertical external cavity surface emitting laser |
| EP2325955A1 (en) * | 2009-11-23 | 2011-05-25 | Klastech- Karpushko Laser Technologies GmbH | Resonant cavity optically pumped laser and method of operating the same |
| CN113161861A (en) * | 2021-04-19 | 2021-07-23 | 北京工业大学 | Multiple-pass pumping Yb-YAG double-cladding planar waveguide laser amplifier |
| CN115621842A (en) * | 2022-09-29 | 2023-01-17 | 中国科学院长春光学精密机械与物理研究所 | Photonic crystal-based optically pumped semiconductor disc laser |
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| KR100754401B1 (en) * | 2006-05-12 | 2007-08-31 | 삼성전자주식회사 | High-power optically end-pumped external-cavity semiconductor laser |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20070074750A (en) * | 2006-01-10 | 2007-07-18 | 삼성전자주식회사 | Vertical external cavity surface emitting laser |
| EP2325955A1 (en) * | 2009-11-23 | 2011-05-25 | Klastech- Karpushko Laser Technologies GmbH | Resonant cavity optically pumped laser and method of operating the same |
| CN113161861A (en) * | 2021-04-19 | 2021-07-23 | 北京工业大学 | Multiple-pass pumping Yb-YAG double-cladding planar waveguide laser amplifier |
| CN115621842A (en) * | 2022-09-29 | 2023-01-17 | 中国科学院长春光学精密机械与物理研究所 | Photonic crystal-based optically pumped semiconductor disc laser |
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