CN117321530A - 稳定电压生成电路以及半导体装置 - Google Patents

稳定电压生成电路以及半导体装置 Download PDF

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Publication number
CN117321530A
CN117321530A CN202280034969.3A CN202280034969A CN117321530A CN 117321530 A CN117321530 A CN 117321530A CN 202280034969 A CN202280034969 A CN 202280034969A CN 117321530 A CN117321530 A CN 117321530A
Authority
CN
China
Prior art keywords
voltage
generation circuit
mosfet
transistor
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202280034969.3A
Other languages
English (en)
Chinese (zh)
Inventor
吉川宽
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Publication of CN117321530A publication Critical patent/CN117321530A/zh
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors
    • G05F3/262—Current mirrors using field-effect transistors only
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/245—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the temperature
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/32—Means for protecting converters other than automatic disconnection
    • H02M1/327—Means for protecting converters other than automatic disconnection against abnormal temperatures
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of DC power input into DC power output
    • H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
    • H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
    • H02M3/10—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/156—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
    • H02M3/158—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Power Engineering (AREA)
  • Control Of Electrical Variables (AREA)
CN202280034969.3A 2021-06-02 2022-03-30 稳定电压生成电路以及半导体装置 Pending CN117321530A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021-092835 2021-06-02
JP2021092835 2021-06-02
PCT/JP2022/016235 WO2022254946A1 (ja) 2021-06-02 2022-03-30 安定化電圧生成回路及び半導体装置

Publications (1)

Publication Number Publication Date
CN117321530A true CN117321530A (zh) 2023-12-29

Family

ID=84323084

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280034969.3A Pending CN117321530A (zh) 2021-06-02 2022-03-30 稳定电压生成电路以及半导体装置

Country Status (5)

Country Link
US (1) US20240094758A1 (https=)
JP (1) JPWO2022254946A1 (https=)
CN (1) CN117321530A (https=)
DE (1) DE112022001961T5 (https=)
WO (1) WO2022254946A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12608032B2 (en) * 2024-05-09 2026-04-21 Macronix International Co., Ltd. Complementary metal-oxide-semiconductor (CMOS) voltage reference generator
CN119088147B (zh) * 2024-07-12 2025-11-11 深圳市麦积电子科技有限公司 一种预稳压电路

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5240737B2 (https=) * 1973-11-26 1977-10-14
JPS50161663A (https=) * 1974-06-20 1975-12-27
JPS60151729A (ja) * 1984-01-18 1985-08-09 Nec Corp 直流電圧発生回路
JPH0514073A (ja) * 1991-06-28 1993-01-22 Fuji Electric Co Ltd 差動増幅器及び比較器
JP4753531B2 (ja) * 2003-02-05 2011-08-24 株式会社リコー 半導体集積回路における温度検出回路
JP4322732B2 (ja) * 2004-05-07 2009-09-02 株式会社リコー 定電流発生回路
JP2008048298A (ja) * 2006-08-21 2008-02-28 Renesas Technology Corp 半導体集積回路装置
KR101485028B1 (ko) * 2007-07-23 2015-01-21 국립대학법인 홋가이도 다이가쿠 기준 전압 발생 회로
JP2008251055A (ja) 2008-07-14 2008-10-16 Ricoh Co Ltd 基準電圧発生回路及びその製造方法、並びにそれを用いた電源装置
JP5323142B2 (ja) * 2010-07-30 2013-10-23 株式会社半導体理工学研究センター 基準電流源回路
WO2020039978A1 (ja) * 2018-08-24 2020-02-27 ソニーセミコンダクタソリューションズ株式会社 基準電圧回路、及び、電子機器

Also Published As

Publication number Publication date
US20240094758A1 (en) 2024-03-21
WO2022254946A1 (ja) 2022-12-08
DE112022001961T5 (de) 2024-01-18
JPWO2022254946A1 (https=) 2022-12-08

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