CN117214642A - Thermoelectric semiconductor multichannel check out test set - Google Patents
Thermoelectric semiconductor multichannel check out test set Download PDFInfo
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- CN117214642A CN117214642A CN202311049799.9A CN202311049799A CN117214642A CN 117214642 A CN117214642 A CN 117214642A CN 202311049799 A CN202311049799 A CN 202311049799A CN 117214642 A CN117214642 A CN 117214642A
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Abstract
The application discloses a thermoelectric semiconductor multichannel detection device, which solves the problems that in the prior art, the test error of the direct thermoelectric semiconductor detection is larger and the test can be completed only by repeated times, and has low efficiency. The device has complete functions, can detect the performance of a plurality of semiconductor single paths and whether the semiconductor is internally provided with a short circuit or a disconnection problem hidden trouble at one time, and can reduce risks and improve efficiency.
Description
Technical Field
The application relates to the technical field of thermoelectric semiconductor service life detection, in particular to thermoelectric semiconductor multichannel detection equipment.
Background
Thermoelectric semiconductors are materials that have a thermoelectric effect and can convert heat to electrical energy or electrical energy to thermal energy. Thermoelectric semiconductors are widely used, for example, in solar panels, thermoelectric generators, temperature sensors, and the like. Therefore, it is particularly important to detect the performance of thermoelectric semiconductors.
At present, the detection means for the thermoelectric semiconductor module at home and abroad mainly takes a single-path or multi-path product detection as a main part, has a smaller measurement range and lower precision; for a simple and single thermoelectric semiconductor module, the test is more convenient; if the test is to multi-specification and high-performance thermoelectric semiconductor modules, the test range is small, the precision is low, the test error is large, the test can be completed only by repeated times, the efficiency is low, the false detection is easy, and the problem that whether the semiconductor component has defects such as short circuit and open circuit is not easy to detect, so that defective products flow out is avoided. There is a need for a multi-path lifetime detection device that can detect the performance of a plurality of thermoelectric semiconductors in a single path and whether there is a short circuit or disconnection problem hidden trouble inside the thermoelectric semiconductors at one time, and reduce the risk and improve the detection efficiency.
Disclosure of Invention
The application aims to solve the problems that in the prior art, the thermoelectric semiconductor detection test has larger test error and can be completed only by repeated times, and the efficiency is low, and provides thermoelectric semiconductor multichannel detection equipment which has complete functions and can detect the performance of a plurality of semiconductor single channels and whether the semiconductor is internally provided with hidden dangers of short circuit and disconnection at one time, thereby reducing risks and improving the efficiency.
In order to achieve the above purpose, the present application adopts the following technical scheme: the thermoelectric semiconductor temperature change detection device comprises detection modules for simultaneously detecting the performances of a plurality of groups of thermoelectric semiconductors and the temperature change of the thermoelectric semiconductors, and a control module for receiving detection signals of the detection modules, analyzing the detection signals and issuing action instructions to other circuit modules of the detection equipment, wherein the control module is connected with a display communication module for simultaneously setting different parameters of the detection modules and a storage communication module for storing detection results in a file form.
The detection module detects the surface temperature of the thermoelectric semiconductor and the on-off state of an internal circuit, sends detection signals to the control module, the control circuit module receives the detection signals, issues action instructions after analysis, stores data into the storage communication module (if needed, can establish communication relation with the PC end, sends and receives the data so that the detection result can be displayed on the PC end), and displays the analysis and conversion data result on the display communication module. Meanwhile, the display communication module can respectively set different test condition parameters according to products of different types and specifications, and meanwhile, the performance of the multi-channel semiconductor is detected and compared, so that the detection efficiency is improved.
The detection equipment can detect the semiconductor performance and the temperature sensor value of a plurality of groups of channels simultaneously, judge whether the thermoelectric semiconductor component has the problem of short circuit or open circuit, has high detection efficiency, can be connected with a PC end, and can be directly inserted into storage devices such as a USB flash disk and the like to record and store data in real time.
Preferably, the detection module comprises a temperature detection module for detecting the surface temperature change of the thermoelectric semiconductor and a semiconductor detection module for detecting the performance of the thermoelectric semiconductor and the on-off state of an internal circuit of the thermoelectric semiconductor, and the semiconductor detection modules are in one-to-one correspondence with the temperature detection modules.
The temperature detection module and the semiconductor detection module are connected with the control module, the temperature detection module sends the detected temperature result to the control module, and the control module judges whether the temperature exceeds the standard or fails. The detection equipment can simultaneously test the performance of a plurality of single-channel semiconductors and the temperature change of the surface temperature sensor, and the test efficiency is improved.
Preferably, the semiconductor detection circuit comprises a fault detection module, the fault detection module comprises a signal detection module connected with the thermoelectric semiconductor, the signal detection circuit is connected with a logic comparison module, the logic comparison module is connected with an optocoupler judgment module, and the optocoupler judgment module is connected with the control module.
The signal detection module is used for detecting the electric signal of the thermoelectric semiconductor to be detected and sending the detection result to the logic comparison module, the logic comparison module carries out logic comparison on the electric signal, detects the performance of the thermoelectric semiconductor and judges whether the thermoelectric semiconductor is internally shorted or not, the logic comparison module sends the comparison result to the optocoupler judgment module, and the optocoupler judgment module judges whether an alarm passage is formed or not and sends a signal to the control module. The control module receives the signals of the optocoupler judging module, analyzes and judges, sends out a correct instruction, continues to work or stops working, and sends out an alarm reminding.
Preferably, the fault detection module further comprises a differential amplification module, and the differential amplification module is respectively connected with the signal detection module and the logic comparison module.
The differential amplification module is used for amplifying the weak electric signals detected by the signal monitoring module and improving the accuracy of detection results.
Preferably, the semiconductor detection module further comprises a TEC driving module, and the TEC driving module is connected with the control module.
The TEC driving module applies a prescribed voltage to the thermoelectric semiconductor, thereby controlling the on and off of the thermoelectric semiconductor upon detection.
Preferably, the temperature detection module comprises a temperature sensor arranged on the surface of the thermoelectric semiconductor and an NTC detection circuit connected with the temperature sensor, and the NTC detection circuit is connected with the control module.
The temperature detection module detects whether the temperature of the thermoelectric semiconductor exceeds the standard or fails, so that poor products are effectively detected, and the quality of the thermoelectric semiconductor is ensured.
Preferably, the detection device further comprises an AC/DC power module for converting the voltage required by the direct current circuit.
After the detection equipment is electrified, the AC/DC power supply module operates, converts the alternating voltage into direct voltage and supplies the direct voltage to the DC-DC voltage reduction circuit. The DC-DC step-down power supply circuit converts the voltages required by all stages of modules, the control module is electrified to start working, and the test flow is started.
Preferably, the control device further comprises a DC-DC step-down power supply circuit, and the DC-DC step-down power supply circuit is connected with the control module.
If the AC 220V is supplied, the control circuit only needs DC 5V, and the AC/DC power module is used for converting the alternating current into direct current, and then the DC-DC step-down power supply circuit is used for step-down processing, so that DC 5V is obtained.
Preferably, the display communication module comprises a display communication circuit connected with the control circuit and a touch display screen for setting the condition parameters required by the test and displaying the measurement data, and the display communication circuit is connected with the touch display screen.
The user can select to set the required condition parameters and the measurement data to be displayed on the touch display screen, and when the equipment starts to work, the numerical value of the result detected by the equipment is displayed on the screen. Such as effective time, temperature, etc.
Preferably, the detection device further comprises a fault alarm circuit connected to the control circuit.
If faults are detected, the fault alarm module starts an alarm to remind a user of faults, and meanwhile, the control module closes to stop the operation of the test function so as to avoid danger.
Therefore, the application has the following beneficial effects:
1. the detection equipment can simultaneously test the performance of a plurality of single-channel semiconductors and the temperature change of the surface temperature sensor, including whether the single channel of the thermoelectric semiconductor has short circuit or open circuit, so that the problem of bad products is effectively judged, and the test efficiency is improved;
2. the detection equipment can set different parameter specifications according to different products at the same time, and can perform batch model comparison test to identify that the product performance is excellent;
3. the detection equipment adopts a touch display screen for operation display, is intelligent and convenient, and is clear and reliable.
Drawings
FIG. 1 is a schematic diagram of a test of the test apparatus of the present application.
Fig. 2 is a schematic diagram of functional modules of the detection device in the present application.
FIG. 3 is a schematic diagram of a single screen multi-pass test of a test apparatus of the present application.
FIG. 4 is a schematic diagram of a touch screen parameter setting in accordance with the present application.
Fig. 5 is a schematic diagram of a multi-screen multi-path test of the test apparatus of the present application.
FIG. 6 is a schematic block diagram of a detection module according to the present application.
In the figure: 1. a detection module; 2. a control module; 3. displaying the communication module; 4. storing the communication module; 5. a fault alarm module; 6. a fault detection module; 7. a display communication circuit; 8. touching the display screen; 9. a thermoelectric semiconductor to be tested; 10. a PC end; 11. a detection device; 12. a DC-DC step-down power supply circuit; 13. a TEC driving module; 14. a temperature sensor; 15. a user setting value; 16. measuring a data value; 17. an NTC detection circuit; 18. an AC/DC power module.
Detailed Description
The application is described in further detail below with reference to the attached drawings and detailed description:
embodiment one:
the embodiment provides a thermoelectric semiconductor multi-path detection device, as shown in fig. 1, a detection device 11 is respectively connected with a PC end 10 and a thermoelectric semiconductor 9 to be detected, the detection device is used for simultaneously testing the performance of a plurality of single-path thermoelectric semiconductors and the temperature change of a thermoelectric semiconductor surface temperature sensor, and is connected with the PC end, test data can be stored in the PC end in a file form, and storage devices such as a usb disk can also be directly inserted into the detection device for recording and storing the data in real time.
Specifically, as shown in fig. 2, the detection device in this embodiment includes a detection module 1, a control module 2, a display communication module 3, a storage communication module 4, and a fault alarm module 5, where the detection module is connected to the control module, and the control module is connected to the display communication module and the fault alarm module, respectively, and the display communication module includes a touch display screen 8. The detection module can detect the performance of a plurality of groups of thermoelectric semiconductors and the temperature change of the thermoelectric semiconductors at the same time, and the control module can receive the detection signals of the detection module, analyze the detection signals and issue action instructions to other circuit modules of the detection equipment; the display communication module can simultaneously set different detection parameters of the detection module according to different product specifications.
As shown in fig. 3, in this embodiment, there are three groups of detection modules, and three groups of thermoelectric semiconductors can be tested simultaneously. The detection device in this embodiment works:
connecting a thermoelectric semiconductor to be tested with detection equipment, and respectively setting different test condition parameters according to products of different types and specifications through a touch display screen; the detection module is used for detecting the surface temperature of the thermoelectric semiconductor, the performance of the thermoelectric semiconductor and the on-off state of an internal circuit of the thermoelectric semiconductor at the same time and sending a detection signal to the control module; the control circuit module receives the detection signal, issues an action instruction after analysis, stores data into the storage communication module (if necessary, can establish a communication relation with the PC end, sends and receives the data so that the detection result can be displayed on the PC end), and displays the analysis and conversion data result on the touch display screen; if a fault is detected, the fault alarm module starts an alarm (such as a buzzer sounds to alarm) to remind a user of the fault, and meanwhile, the control module closes to stop the operation of the test function so as to avoid danger.
As shown in fig. 4, the data displayed on the touch display screen includes user set values 15 (such as t1= _ s, t2= _ s, t3= _ s, and i1= _ A, I2= _ A, I3_ a) and measured data values 16 (such as t1= _ c, t2= _ c, and t3= _ c).
The detection equipment of the embodiment can detect and compare the semiconductor performance and the temperature sensor value of a plurality of groups of channels simultaneously, judge whether the thermoelectric semiconductor component has the problem of short circuit or open circuit, has high detection efficiency, can be connected with a PC end, and can be directly inserted into storage devices such as a USB flash disk and the like to record and store data in real time.
Embodiment two:
the present embodiment further describes a detection module based on the first embodiment.
Specifically, in this embodiment:
the detection module comprises a temperature detection module and a semiconductor detection module, and the semiconductor detection module corresponds to the temperature detection module one by one; the temperature detection module is connected with the control module and is used for detecting the surface temperature change of the thermoelectric semiconductor and sending a temperature detection result to the control module, and the control module judges whether the temperature exceeds the standard or fails; the semiconductor detection module is connected with the control module and used for detecting the performance of the thermoelectric semiconductor and the on-off state of an internal circuit of the thermoelectric semiconductor. The detection module can simultaneously test the performance of a plurality of single-channel semiconductors and the temperature change of the surface temperature sensor, and the test efficiency is improved.
The semiconductor detection circuit comprises a fault detection module 6, wherein the fault detection module comprises a signal detection module, a differential amplification module, a logic comparison module and an optical coupler judgment module which are sequentially connected, the signal detection module is connected with a thermoelectric semiconductor module to be detected, and the optical coupler judgment module is connected with a control module.
The signal detection module is used for detecting the electric signal of the detected thermoelectric semiconductor and sending the detected electric signal to the differential amplification module; the differential amplification module is used for amplifying the weak electric signals detected by the signal monitoring module and improving the accuracy of detection results; the logic comparison module is used for carrying out logic comparison on the amplified electric signals, detecting the performance of the thermoelectric semiconductor and judging whether the thermoelectric semiconductor is internally short-circuited or not, and meanwhile, the logic comparison module sends a comparison result to the optocoupler judgment module which judges whether an alarm passage is formed or not and sends a signal to the control module. The control module receives the signals of the optocoupler judging module, analyzes and judges, sends out a correct instruction, continues to work or stops working, and sends out an alarm reminding.
In this embodiment, the semiconductor detection module further includes a TEC driving module 13, and the TEC driving module is connected to the thermoelectric semiconductor to be tested and the control module respectively. The TEC driving module applies a prescribed voltage to the thermoelectric semiconductor, thereby controlling the on and off of the thermoelectric semiconductor upon detection.
In this embodiment, the temperature detection module includes a temperature sensor 14 disposed on the surface of the thermoelectric semiconductor, and an NTC detection circuit 17 connected to the temperature sensor, and the NTC detection circuit is connected to the control module.
The detection device in this embodiment has the following advantages:
1. the detection equipment can simultaneously test the performance of a plurality of single-channel semiconductors and the temperature change of the surface temperature sensor, including whether the single channel of the thermoelectric semiconductor has short circuit or open circuit, so that the problem of bad products is effectively judged, and the test efficiency is improved;
2. the detection equipment can set different parameter specifications according to different products at the same time, and can perform batch model comparison test to identify that the product performance is excellent;
3. the detection equipment adopts a touch display screen for operation display, is intelligent, convenient, clear and reliable;
4. the detection equipment can be connected with the PC end, can also be directly inserted into memory devices such as a USB flash disk and the like, records and stores test data in real time, and is convenient for follow-up checking.
Embodiment III:
in this embodiment, based on the first embodiment, multiple groups of thermoelectric semiconductor tests are controlled and displayed simultaneously by using multiple screens, as shown in fig. 5, in this embodiment, six groups of detection modules are provided, two touch display screens are provided, two fault alarm modules are provided, three groups of detection modules and one fault alarm module are linked with each touch display screen, and data of the three groups of detection modules are displayed.
It should be noted that, in this embodiment, six groups of detection modules are adopted, and two display screens do not represent that the multi-screen simultaneous control display of multiple groups of thermoelectric semiconductor tests in the present application can only be performed. The specific detection quantity can be determined according to the test requirement and the set quantity of the equipment detection channels, and the quantity of the touch display screen display units is also determined by the test requirement and the screen display size. For example, a large number of groups of tests must display data for comparison at the same time, but the screen display area is limited, so that a plurality of touch display screens are required to meet the requirements; if no special requirement exists, the screen multi-page display can be adopted, and the page is turned to be checked. The detection and screen display can be flexibly configured according to the needs. The number of detection groups is not fixed, and can be more or less.
As shown in fig. 6, the detection module in this embodiment includes a temperature detection module and a semiconductor detection module, where the semiconductor detection module corresponds to the temperature detection module one by one; the temperature detection module is connected with the semiconductor detection module control module. The semiconductor detection module comprises a fault detection module and a TEC driving module, and the fault detection module is respectively connected with the thermoelectric semiconductor to be detected and the control module; the TEC driving module is respectively connected with the thermoelectric semiconductor to be tested and the control module.
The temperature detection module comprises a temperature sensor arranged on the surface of the thermoelectric semiconductor and an NTC detection circuit connected with the temperature sensor, and the NTC detection circuit is connected with the control module.
In this embodiment, the detection apparatus further includes an AC/DC power module 18 for converting the required voltage of each stage of the circuit. After the detection equipment is electrified, the AC/DC power supply module operates, converts the alternating voltage into direct voltage and supplies the direct voltage to the DC-DC voltage reduction circuit. The DC-DC step-down power supply circuit converts the voltages required by all stages of modules, the control module is electrified to start working, and the test flow is started.
The detection device in this embodiment further includes a DC-DC step-down power supply circuit, and the DC-DC step-down power supply circuit is connected to the control module and the AC/DC power supply module, respectively.
If the AC 220V is supplied, the control circuit only needs DC 5V, and the AC/DC power module is used for converting the alternating current into direct current, and then the DC-DC step-down power supply circuit is used for step-down processing, so that DC 5V is obtained.
Specific: in this embodiment, the power module may further adopt a DC-DC step-down power supply circuit 12, where the DC-DC step-down power supply circuit is connected to the control module to step down the DC power.
In this embodiment, the detection device may be powered by a battery inside the detection device, or may be powered by an external power source.
In this embodiment, the display communication module includes a display communication circuit 7 connected to the control circuit and a touch display screen 8 for setting the condition parameters required for the test and displaying the measurement data, and the display communication circuit is connected to the touch display screen.
The user can select to set the required condition parameters and the measurement data to be displayed on the touch display screen, and when the equipment starts to work, the numerical value of the result detected by the equipment is displayed on the screen. Such as effective time, temperature, etc.
In this embodiment, a storage communication module is further added, and the storage communication module is connected with the control module and stores the detection result in a file form.
Embodiment four:
based on the second embodiment, the multiple groups of fault detection circuits can also be connected with the same thermoelectric semiconductor to be tested, different parameters are set by the touch display screen, and different data tests are performed on the same thermoelectric semiconductor to be tested.
Meanwhile, in this embodiment, the control module includes a short-circuit protection module, and after the fault detection module detects the overcurrent of the thermoelectric semiconductor to be tested, the short-circuit module cuts off the on-off control of the TEC driving module on the thermoelectric semiconductor to be tested, and outputs an overcurrent alarm signal to the fault alarm module, and the fault alarm module sends out a short-circuit alarm. In this embodiment, the overcurrent alarm signal is a three-tone alarm of a buzzer in the fault alarm module, and an indicator light in the fault alarm module is turned on red.
The control module comprises an overheat protection module, and the overheat protection module outputs an overheat alarm signal to the fault alarm module when the temperature detection module detects that the surface temperature of the thermoelectric semiconductor to be detected is too high, and the fault alarm module sends out overheat alarm. In this embodiment, the overheat alarm signal is a buzzer in the fault alarm module that sounds five sounds in short time, and an indicator light in the fault alarm module lights yellow.
The above-described embodiment is only a preferred embodiment of the present application, and is not limited in any way, and other variations and modifications may be made without departing from the technical aspects set forth in the claims.
Claims (10)
1. The thermoelectric semiconductor multichannel detection equipment is characterized by comprising detection modules for simultaneously detecting the performances of a plurality of groups of thermoelectric semiconductors and the temperature change of the thermoelectric semiconductors and a control module for receiving detection signals of the detection modules, analyzing the detection signals and issuing action instructions to other circuit modules of the detection equipment, wherein the control module is connected with a display communication module for simultaneously setting different parameters of the detection modules and a storage communication module for storing detection results in a file form.
2. The thermoelectric semiconductor multi-path detection device according to claim 1, wherein the detection module comprises a temperature detection module for detecting the surface temperature change of the thermoelectric semiconductor and a semiconductor detection module for detecting the performance of the thermoelectric semiconductor and the on-off state of an internal circuit of the thermoelectric semiconductor, and the semiconductor detection modules are in one-to-one correspondence with the temperature detection modules.
3. The thermoelectric semiconductor multi-path detection device according to claim 2, wherein the semiconductor detection circuit comprises a fault detection module, the fault detection module comprises a signal detection module connected with the thermoelectric semiconductor, the signal detection circuit is connected with a logic comparison module, the logic comparison module is connected with an optocoupler judgment module, and the optocoupler judgment module is connected with the control module.
4. A thermoelectric semiconductor multi-path inspection apparatus according to claim 3, wherein the fault inspection module further comprises a differential amplification module, and the differential amplification module is connected to the signal inspection module and the logic comparison module, respectively.
5. The thermoelectric semiconductor multi-path detection device of claim 2, 3 or 4, wherein the semiconductor detection module further comprises a TEC drive module, the TEC drive module being coupled to the control module.
6. The thermoelectric semiconductor multi-path detection device according to claim 2, wherein the temperature detection module comprises a temperature sensor arranged on the surface of the thermoelectric semiconductor and an NTC detection circuit connected with the temperature sensor, and the NTC detection circuit is connected with the control module.
7. A thermoelectric semiconductor multi-path detection device as in claim 1 or 2 or 3 or 4 further comprising an AC/DC power module for converting the voltage required by the direct current circuit.
8. A thermoelectric semiconductor multi-path detection apparatus as in claim 1 or 2 or 3 or 4 further comprising a DC-DC buck supply circuit, said DC-DC buck supply circuit being connected to the control module.
9. The thermoelectric semiconductor multichannel detecting apparatus according to claim 1 or 2 or 3 or 4, wherein the display communication module comprises a display communication circuit connected with the control circuit and a touch display screen for setting the condition parameters required for the test and displaying the measurement data, and the display communication circuit is connected with the touch display screen.
10. A thermoelectric semiconductor multi-path detection device as in claim 1 or 2 or 3 or 4 further comprising a fault alert module coupled to the control circuit.
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| CN202311049799.9A CN117214642A (en) | 2023-08-21 | 2023-08-21 | Thermoelectric semiconductor multichannel check out test set |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN118465486A (en) * | 2024-05-29 | 2024-08-09 | 星奇(上海)半导体有限公司 | Universal test system and method for semiconductor components |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118465486A (en) * | 2024-05-29 | 2024-08-09 | 星奇(上海)半导体有限公司 | Universal test system and method for semiconductor components |
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