CN117060911A - Switching circuit - Google Patents
Switching circuit Download PDFInfo
- Publication number
- CN117060911A CN117060911A CN202310923786.3A CN202310923786A CN117060911A CN 117060911 A CN117060911 A CN 117060911A CN 202310923786 A CN202310923786 A CN 202310923786A CN 117060911 A CN117060911 A CN 117060911A
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- Prior art keywords
- transistor
- electrode
- pin
- resistor
- module
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- 239000003990 capacitor Substances 0.000 claims description 13
- 238000004806 packaging method and process Methods 0.000 abstract description 4
- 238000010891 electric arc Methods 0.000 abstract description 2
- 230000010354 integration Effects 0.000 abstract description 2
- 230000003071 parasitic effect Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/28—Modifications for introducing a time delay before switching
Landscapes
- Electronic Switches (AREA)
Abstract
The embodiment of the invention discloses a switching circuit, which at least comprises: an electronic load switch, the electronic load switch comprising at least: the switching device comprises a first transistor, a second transistor and a switching module, wherein the drain electrode of the first transistor is connected with the positive electrode of the power supply module, the source electrode of the first transistor is connected with the source electrode of the second transistor, the grid electrode of the first transistor is connected with the grid electrode of the second transistor, the drain electrode of the second transistor is connected with the positive electrode of a load, the first pin of the switching module is connected with the grid electrode of the first transistor and the grid electrode of the second transistor, and the first pin of the switching module is connected with the negative electrode of the power supply module and the negative electrode of the load. The on-off of the power supply is controlled by controlling the working state of the transistor, the current is controllable, the electric arc and the impact current are reduced, the packaging size is small, the circuit is simple, the integration is easy, and the service life is long.
Description
Technical Field
The invention relates to the technical field of circuits, in particular to a switching circuit.
Background
In devices that require power to be supplied, it is common to convert ac power to dc power or to directly use dc power. In order to control the on-off of direct current heavy current, a mechanical switch with a contact is generally used, and the mechanical switch has the current carrying capacity of heavy current and has good breaking capacity for direct current. As shown in fig. 1, the mechanical switch is a physical contact switch, and the direct current has no zero crossing point relative to the alternating current, so that the mechanical switch is easier to generate larger impact current or arc at the moment of switching on and off the switch, and larger impact loss is generated on the direct current switch, thereby affecting the reliability and service life of the mechanical switch.
In order to overcome the above-mentioned drawbacks, various mechanical switches are on the market, and the contact materials of the mechanical switches are updated, the thickness of the contacts is thickened, and larger dimensions are designed to obtain higher reliability and service life.
As the design of the electronic products is increasingly miniaturized, the size of the mechanical switch is gradually reduced, but the mechanical switch is still difficult to integrate in electronic products with small size and larger power, such as aeromodelling planes, quadric-axis aircrafts and the like, and the use of the large-size mechanical switch not only increases the size of the products, but also causes electric arcs and impact currents to influence the electromagnetic characteristics of the electronic products.
Disclosure of Invention
Aiming at the technical problems, the embodiment of the invention provides a switching circuit.
The embodiment of the invention provides a switching circuit and an electronic load switch, wherein the electronic load switch at least comprises: the switching device comprises a first transistor, a second transistor and a switching module, wherein the drain electrode of the first transistor is connected with the positive electrode of the power supply module, the source electrode of the first transistor is connected with the source electrode of the second transistor, the grid electrode of the first transistor is connected with the grid electrode of the second transistor, the drain electrode of the second transistor is connected with the positive electrode of a load, the first pin of the switching module is connected with the grid electrode of the first transistor and the grid electrode of the second transistor, and the first pin of the switching module is connected with the negative electrode of the power supply module and the negative electrode of the load.
Optionally, the switching circuit further includes: and a delay switch circuit.
Optionally, the switching circuit further includes: a voltage dividing circuit.
Optionally, the delay switch circuit at least includes: the first resistor and the capacitor are connected with the source electrode of the first transistor by the first pin of the capacitor, the first transistor gate electrode is connected with the second pin of the capacitor, the first transistor source electrode is connected with the first pin of the first resistor, and the first transistor gate electrode is connected with the second pin of the first resistor.
Optionally, the voltage dividing circuit at least includes: the first resistor and the second resistor, the first pin of the first resistor is connected with the source electrode of the first transistor, the second pin of the first resistor is connected with the grid electrode of the first transistor, the first pin of the second resistor is connected with the second pin of the first resistor, and the second pin of the second resistor is connected with the first pin of the switch module.
Optionally, the power module is a dc power module.
Optionally, the first transistor comprises at least one or more of a MOSFET or an IGBT, and the second transistor comprises at least one or more of a MOSFET or an IGBT.
Optionally, the first transistor is a PMOS transistor.
Optionally, the second transistor is a PMOS transistor.
Optionally, the switch module is a mechanical switch or a circuit module switch.
In the technical scheme provided by the embodiment of the invention, the switching circuit at least comprises: an electronic load switch, the electronic load switch comprising at least: the switching device comprises a first transistor, a second transistor and a switching module, wherein the drain electrode of the first transistor is connected with the positive electrode of the power supply module, the source electrode of the first transistor is connected with the source electrode of the second transistor, the grid electrode of the first transistor is connected with the grid electrode of the second transistor, the drain electrode of the second transistor is connected with the positive electrode of a load, the first pin of the switching module is connected with the grid electrode of the first transistor and the grid electrode of the second transistor, and the first pin of the switching module is connected with the negative electrode of the power supply module and the negative electrode of the load. The on-off of the power supply is controlled by controlling the working state of the transistor, the current is controllable, the electric arc and the impact current are reduced, the packaging size is small, the circuit is simple, the integration is easy, and the service life is long.
Drawings
FIG. 1 is a schematic diagram of a switch circuit according to the prior art;
fig. 2 is a schematic structural diagram of a switching circuit according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a switch circuit according to an embodiment of the present invention;
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to fall within the scope of the invention.
Referring to fig. 2, a schematic structural diagram of a switching circuit according to an embodiment of the invention is shown, where the switching circuit at least includes: an electronic load switch, the electronic load switch comprising at least: the switching device comprises a first transistor Q1, a second transistor Q2 and a switching module S1, wherein the drain electrode of the first transistor Q1 is connected with the positive electrode of the power supply module, the source electrode of the first transistor Q1 is connected with the source electrode of the second transistor Q2, the grid electrode of the first transistor Q1 is connected with the grid electrode of the second transistor Q2, the drain electrode of the second transistor Q2 is connected with the positive electrode of the load, the first pin of the switching module S1 is connected with the grid electrode of the first transistor Q1 and the grid electrode of the second transistor Q2, and the first pin of the switching module S1 is connected with the negative electrode of the power supply module and the negative electrode of the load.
Specifically, the electronic load switch is a switching circuit composed of a switching module S1, a first transistor Q1, and a second transistor Q2.
The switching module S1 controls the conduction and non-conduction of the first transistor Q1 and the second transistor Q2, so as to turn on or off the load supply current. The source electrode of the first transistor Q1 is connected with the source electrode of the second transistor Q2, the cathode of the parasitic diode of the first transistor Q1 is connected with the cathode of the parasitic diode of the second transistor Q2, and the turn-off effect of the electronic load switch is optimized. And different on-resistances, off-voltages and package sizes of the first transistor Q1 and the second transistor Q2 are selected according to the actual condition of the load, so that the size of the switch is reduced.
Specifically, the switching circuit further includes a delay switching circuit.
Optionally, the delay switch circuit comprises at least: the first pin of the capacitor C1 is connected with the source electrode of the first transistor Q1, the second pin of the capacitor C1 is connected with the grid electrode of the first transistor Q1, the first pin of the first resistor R1 is connected with the source electrode of the first transistor Q1, and the second pin of the first resistor R1 is connected with the grid electrode of the first transistor Q1.
The RC delay circuit is composed of a first resistor R1 and a capacitor C1, when a switch module S1 is closed, a first transistor Q1 is conducted, a direct-current power supply charges the capacitor C1 through the first transistor Q1, the source voltage of a second transistor Q2 is gradually increased, when the source voltage of the second transistor Q2 reaches the conducting voltage of the second transistor Q2, the second transistor Q2 is conducted, and a power supply module supplies power required by a load; when the switch module S1 is turned off and the first transistor Q1 is not turned on, the capacitor C1 discharges through the first resistor R1, and the power supply of the load is rapidly turned off. By varying the resistance of the first resistor R1 and the capacitance of the capacitor C1, different on-times of the first transistor Q1 can be set, thereby reducing the impact of the surge voltage on the load, as shown in fig. 3.
Specifically, the switching circuit further includes a voltage dividing circuit.
Optionally, the voltage dividing circuit includes at least: the first pin of the first resistor R1 is connected with the source electrode of the first transistor Q1, the second pin of the first resistor R1 is connected with the grid electrode of the first transistor Q1, the first pin of the second resistor R2 is connected with the second pin of the first resistor R1, and the second pin of the second resistor R2 is connected with the first pin of the switch module S1.
The voltage dividing circuit consists of a first resistor R1 and a second resistor R2, when the switch module S1 is closed, the first transistor Q1 is conducted, the first resistor R1 and the second resistor R2 divide the power supply voltage of the power supply module, and the proper conducting voltage of the first transistor Q1 and the proper conducting voltage of the second transistor Q2 are set by selecting the resistance value of the first resistor R1 and the resistance value of the second resistor R2, so that the first transistor Q1 and the second transistor Q2 are controlled to be conducted when the power supply is connected and not conducted when the power supply is connected reversely, and the gate electrode of the first transistor Q1 and the gate electrode of the second transistor Q2 are protected from being broken down by the excessively high power supply voltage.
Optionally, the direct current high current switching current comprises: the first transistor Q1 includes at least one or more of a MOSFET or an IGBT, and the second transistor Q2 includes at least one or more of a MOSFET or an IGBT.
Optionally, the first transistor Q1 is a PMOS transistor, and the second transistor Q2 is a PMOS transistor.
Specifically, vgs: the voltage between the G pole and the S pole of the MOS tube is used for controlling the on/off of the MOS tube or working in an amplifying region.
PMOS refers to an n-type substrate and a p-channel, and is a MOS tube for conveying current by the flow of holes.
MOS tube: is an abbreviation for MOSFET. MOSFET Metal-Oxide-semiconductor field effect transistor (MOSFET) is abbreviated as Metal-Oxide-Semiconductor Field-Effect Transistor.
Because the MOS tube has the parasitic diode, two PMOS are needed to be used, and the two parasitic diodes are butted in a source electrode butting mode, so that the unidirectional conduction characteristic of the parasitic diodes is invalid, and the normal turn-off effect of the controlled electronic switch is not influenced.
When the power supply module is connected positively, if the switch module S1 is closed, the first transistor Q1 is conducted and the second transistor Q2 is conducted, and the power supply module provides power supply current of a load; when the battery is reversely connected, if the switch module S1 is turned on, the on voltage of the first transistor Q1 is positive, and the on voltage of the second transistor Q2 is positive, because the first transistor Q1 is a PMOS transistor and the second transistor Q2 is a PMOS transistor, the first transistor Q1 is not conductive and the second transistor Q2 is not conductive, and the power module does not provide the power supply current of the load. And the damage to the load caused by reverse connection of the power supply module is prevented.
Optionally, the switch module S1 is any one or a combination of a plurality of mechanical switches and circuit module switches.
1. The mechanical switch, the switch module S1 controls the conduction and non-conduction of the first transistor Q1, and does not need a large current to flow, the size of the mechanical switch is smaller, the generated impact arc and electromagnetic interference are smaller, and the size of the product and the electromagnetic interference are reduced.
2. The circuit module switch uses the circuit switch module to generate an output control signal to control the conduction and non-conduction of the first transistor Q1, so that the impact arc of the mechanical switch is optimized, the packaging size is smaller, and the size design of a high-power product is optimized.
As shown in fig. 2-3, as shown in fig. MOS transistors Q1 and Q2, capacitor C1, resistors R1, R2, and S1 form an electronic load switch controlled by S1. Q1 and Q2 are used for switching on and off load current, and different on-resistances, off-voltages and package sizes can be selected according to actual conditions of the load, so that the product requirements are met.
R1, R2 are used for carrying out the bleeder to the input power voltage, and control MOS pipe can switch on when the power connects on the one hand, can not switch on when the power connects the reverse, and the gate pole of on the other hand protection MOS pipe is not broken down by too high power movie.
And C1, R1 and R2 form a charge-discharge circuit for controlling the establishment time of Vgs voltage of the MOS tube, thereby controlling the opening time of the MOS tube and reducing the influence of impact current on a load.
S1 is used for controlling the MOS tube to be opened or closed by a user, and because the S1 controls the switching signal of the MOS tube, excessive current is not needed, and therefore, the selection of S1 can be very wide.
When the power supply BAT is connected, if S1 is closed, the Vgs voltages of Q1 and Q2 are divided by R1 and R2 to ensure that Q1 and Q2 enter a saturated conduction state, and the power supply is connected with a load; when S1 is turned off, the Vgs voltages of Q1 and Q2 are turned on to 0 by R1, and thus Q1 and Q2 are turned off, and the load is disconnected from the power supply.
When the battery is reversely connected, if the S1 is closed, the Vgs voltages of the Q1 and the Q2 are positive, and as the Q1 and the Q2 are PMOS, the Q1 and the Q2 are cut off no matter how the R1 and the R2 are divided, and the power supply is disconnected from the load.
In the technical scheme provided by the embodiment of the invention, the switch circuit at least comprises: an electronic load switch, the electronic load switch comprising at least: the switching device comprises a first transistor Q1, a second transistor Q2 and a switching module S1, wherein the drain electrode of the first transistor Q1 is connected with the positive electrode of the power supply module, the source electrode of the first transistor Q1 is connected with the source electrode of the second transistor Q2, the grid electrode of the first transistor Q1 is connected with the grid electrode of the second transistor Q2, the drain electrode of the second transistor Q2 is connected with the positive electrode of the load, the first pin of the switching module S1 is connected with the grid electrode of the first transistor Q1 and the grid electrode of the second transistor Q2, and the first pin of the switching module S1 is connected with the negative electrode of the power supply module and the negative electrode of the load. The electronic element combined circuit is adopted to replace a mechanical switch, so that the influence of impact current on a load is reduced, the packaging size of the switch is reduced, the service life is longer, and the damage to the load caused by the reverse connection of the positive electrode and the negative electrode of the power supply is prevented.
The above embodiments are only for illustrating the technical solution of the present invention, and are not limiting; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present invention.
Claims (10)
1. A switching circuit, characterized in that: at least comprises: an electronic load switch, the electronic load switch comprising at least: the switching device comprises a first transistor, a second transistor and a switching module, wherein the drain electrode of the first transistor is connected with the positive electrode of the power supply module, the source electrode of the first transistor is connected with the source electrode of the second transistor, the grid electrode of the first transistor is connected with the grid electrode of the second transistor, the drain electrode of the second transistor is connected with the positive electrode of a load, the first pin of the switching module is connected with the grid electrode of the first transistor and the grid electrode of the second transistor, and the first pin of the switching module is connected with the negative electrode of the power supply module and the negative electrode of the load.
2. The switching circuit of claim 1, wherein the switching circuit further comprises: and a delay switch circuit.
3. The switching circuit of claim 1, wherein the switching circuit further comprises: a voltage dividing circuit.
4. The switching circuit of claim 2, wherein the delay switching circuit comprises at least: the first resistor and the capacitor are connected with the source electrode of the first transistor by the first pin of the capacitor, the first transistor gate electrode is connected with the second pin of the capacitor, the first transistor source electrode is connected with the first pin of the first resistor, and the first transistor gate electrode is connected with the second pin of the first resistor.
5. A switching circuit according to claim 3, wherein the voltage divider circuit comprises at least: the first resistor and the second resistor, the first pin of the first resistor is connected with the source electrode of the first transistor, the second pin of the first resistor is connected with the grid electrode of the first transistor, the first pin of the second resistor is connected with the second pin of the first resistor, and the second pin of the second resistor is connected with the first pin of the switch module.
6. The switching circuit of claim 1 wherein the power supply module is a dc power supply module.
7. The switching circuit of claim 1 wherein the first transistor comprises at least one or more of a MOSFET or an IGBT and the second transistor comprises at least one or more of a MOSFET or an IGBT.
8. The switching circuit of claim 7 wherein the first transistor is a PMOS transistor.
9. The switching circuit of claim 7 wherein the second transistor is a PMOS transistor.
10. The switching circuit of claim 1 wherein the switching module is a mechanical switch or a circuit module switch.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310923786.3A CN117060911A (en) | 2023-07-26 | 2023-07-26 | Switching circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310923786.3A CN117060911A (en) | 2023-07-26 | 2023-07-26 | Switching circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117060911A true CN117060911A (en) | 2023-11-14 |
Family
ID=88658068
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310923786.3A Pending CN117060911A (en) | 2023-07-26 | 2023-07-26 | Switching circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117060911A (en) |
-
2023
- 2023-07-26 CN CN202310923786.3A patent/CN117060911A/en active Pending
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