CN116888743A - 肖特基势垒二极管 - Google Patents
肖特基势垒二极管 Download PDFInfo
- Publication number
- CN116888743A CN116888743A CN202280016981.1A CN202280016981A CN116888743A CN 116888743 A CN116888743 A CN 116888743A CN 202280016981 A CN202280016981 A CN 202280016981A CN 116888743 A CN116888743 A CN 116888743A
- Authority
- CN
- China
- Prior art keywords
- outer peripheral
- schottky barrier
- barrier diode
- trench
- anode electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/60—Schottky-barrier diodes
- H10D8/605—Schottky-barrier diodes of the trench conductor-insulator-semiconductor barrier type, e.g. trench MOS barrier Schottky rectifiers [TMBS]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/113—Isolations within a component, i.e. internal isolations
- H10D62/115—Dielectric isolations, e.g. air gaps
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/875—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being semiconductor metal oxide, e.g. InGaZnO
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
Landscapes
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021028799A JP7669159B2 (ja) | 2021-02-25 | 2021-02-25 | ショットキーバリアダイオード |
| JP2021-028799 | 2021-02-25 | ||
| PCT/JP2022/003329 WO2022181203A1 (ja) | 2021-02-25 | 2022-01-28 | ショットキーバリアダイオード |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116888743A true CN116888743A (zh) | 2023-10-13 |
Family
ID=83049239
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202280016981.1A Pending CN116888743A (zh) | 2021-02-25 | 2022-01-28 | 肖特基势垒二极管 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US12520510B2 (https=) |
| EP (1) | EP4300586A4 (https=) |
| JP (1) | JP7669159B2 (https=) |
| CN (1) | CN116888743A (https=) |
| TW (1) | TWI803189B (https=) |
| WO (1) | WO2022181203A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI905790B (zh) * | 2023-09-21 | 2025-11-21 | 日商Ｔｄｋ股份有限公司 | 半導體裝置 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6191447B1 (en) * | 1999-05-28 | 2001-02-20 | Micro-Ohm Corporation | Power semiconductor devices that utilize tapered trench-based insulating regions to improve electric field profiles in highly doped drift region mesas and methods of forming same |
| US8610235B2 (en) * | 2011-09-22 | 2013-12-17 | Alpha And Omega Semiconductor Incorporated | Trench MOSFET with integrated Schottky barrier diode |
| JP6296445B2 (ja) | 2014-02-10 | 2018-03-20 | ローム株式会社 | ショットキーバリアダイオード |
| DE102016106967B4 (de) * | 2016-04-15 | 2024-07-04 | Infineon Technologies Ag | Halbleiterbauelemente und ein Verfahren zum Bilden eines Halbleiterbauelements |
| JP6845397B2 (ja) | 2016-04-28 | 2021-03-17 | 株式会社タムラ製作所 | トレンチｍｏｓ型ショットキーダイオード |
| JP6932997B2 (ja) * | 2017-05-25 | 2021-09-08 | 富士電機株式会社 | 半導体装置及びその製造方法 |
| JP7045008B2 (ja) | 2017-10-26 | 2022-03-31 | Tdk株式会社 | ショットキーバリアダイオード |
| JP7165322B2 (ja) * | 2018-03-30 | 2022-11-04 | Tdk株式会社 | ショットキーバリアダイオード |
| JP6626929B1 (ja) * | 2018-06-29 | 2019-12-25 | 京セラ株式会社 | 半導体デバイス及び電気装置 |
| JP6980116B2 (ja) * | 2018-08-22 | 2021-12-15 | 三菱電機株式会社 | 酸化物半導体装置及びその製造方法 |
| US20210036166A1 (en) * | 2019-08-01 | 2021-02-04 | AZ Power, Inc | MERGED PiN SCHOTTKY (MPS) DIODE WITH MULTIPLE CELL DESIGN AND MANUFACTURING METHOD THEREOF |
-
2021
- 2021-02-25 JP JP2021028799A patent/JP7669159B2/ja active Active
-
2022
- 2022-01-28 EP EP22759244.1A patent/EP4300586A4/en active Pending
- 2022-01-28 CN CN202280016981.1A patent/CN116888743A/zh active Pending
- 2022-01-28 US US18/260,520 patent/US12520510B2/en active Active
- 2022-01-28 WO PCT/JP2022/003329 patent/WO2022181203A1/ja not_active Ceased
- 2022-02-14 TW TW111105174A patent/TWI803189B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| WO2022181203A1 (ja) | 2022-09-01 |
| US20240055536A1 (en) | 2024-02-15 |
| TWI803189B (zh) | 2023-05-21 |
| JP7669159B2 (ja) | 2025-04-28 |
| EP4300586A1 (en) | 2024-01-03 |
| TW202239009A (zh) | 2022-10-01 |
| JP2022129918A (ja) | 2022-09-06 |
| US12520510B2 (en) | 2026-01-06 |
| EP4300586A4 (en) | 2025-01-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |