CN116803231A - 铁电器件及半导体装置 - Google Patents

铁电器件及半导体装置 Download PDF

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Publication number
CN116803231A
CN116803231A CN202180068990.0A CN202180068990A CN116803231A CN 116803231 A CN116803231 A CN 116803231A CN 202180068990 A CN202180068990 A CN 202180068990A CN 116803231 A CN116803231 A CN 116803231A
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CN
China
Prior art keywords
insulator
oxide
conductor
addition
oxygen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202180068990.0A
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English (en)
Chinese (zh)
Inventor
山崎舜平
神保安弘
大野敏和
佐藤优一
江头祥惠
川口忍
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of CN116803231A publication Critical patent/CN116803231A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G2/00—Details of capacitors not covered by a single one of groups H01G4/00-H01G11/00
    • H01G2/10—Housing; Encapsulation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/20—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the three-dimensional [3D] arrangements, e.g. with cells on different height levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
CN202180068990.0A 2020-10-20 2021-10-11 铁电器件及半导体装置 Pending CN116803231A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020-176335 2020-10-20
JP2020176335 2020-10-20
PCT/IB2021/059272 WO2022084795A1 (ja) 2020-10-20 2021-10-11 強誘電体デバイス、および半導体装置

Publications (1)

Publication Number Publication Date
CN116803231A true CN116803231A (zh) 2023-09-22

Family

ID=81289710

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180068990.0A Pending CN116803231A (zh) 2020-10-20 2021-10-11 铁电器件及半导体装置

Country Status (5)

Country Link
US (1) US20230389332A1 (https=)
JP (1) JPWO2022084795A1 (https=)
KR (1) KR20230091923A (https=)
CN (1) CN116803231A (https=)
WO (1) WO2022084795A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116056553B (zh) * 2023-01-19 2025-10-28 河北大学 基于氮化铝钪的铁电忆阻器、其制备方法及应用
US20250275209A1 (en) * 2024-02-28 2025-08-28 Tetramem Inc. Deuterium-treated ferroelectric devices and methods for fabricating the same

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11251535A (ja) * 1998-02-27 1999-09-17 Fujitsu Ltd 半導体装置およびその製造方法
US6635528B2 (en) * 1999-12-22 2003-10-21 Texas Instruments Incorporated Method of planarizing a conductive plug situated under a ferroelectric capacitor
JP4331442B2 (ja) * 2002-06-14 2009-09-16 富士通マイクロエレクトロニクス株式会社 強誘電体キャパシタ及びその製造方法並びに強誘電体メモリ
JP2010251590A (ja) * 2009-04-17 2010-11-04 Seiko Epson Corp 半導体装置とその製造方法
JP5633346B2 (ja) * 2009-12-25 2014-12-03 株式会社リコー 電界効果型トランジスタ、半導体メモリ、表示素子、画像表示装置及びシステム
CN102782858B (zh) * 2009-12-25 2015-10-07 株式会社理光 场效应晶体管、半导体存储器、显示元件、图像显示设备和系统
WO2011142371A1 (en) * 2010-05-14 2011-11-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2017123388A (ja) * 2016-01-06 2017-07-13 富士通セミコンダクター株式会社 半導体装置及びその製造方法
JP6920192B2 (ja) * 2017-12-28 2021-08-18 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP2019160841A (ja) * 2018-03-07 2019-09-19 ソニーセミコンダクタソリューションズ株式会社 半導体記憶装置、半導体記憶装置の製造方法及び電子機器
JP7360004B2 (ja) * 2019-02-01 2023-10-12 富士通セミコンダクターメモリソリューション株式会社 半導体装置の製造方法及び半導体装置

Also Published As

Publication number Publication date
JPWO2022084795A1 (https=) 2022-04-28
WO2022084795A1 (ja) 2022-04-28
KR20230091923A (ko) 2023-06-23
US20230389332A1 (en) 2023-11-30

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