CN116699883A - Broadband efficient acousto-optic modulator in shear wave working mode and preparation method thereof - Google Patents
Broadband efficient acousto-optic modulator in shear wave working mode and preparation method thereof Download PDFInfo
- Publication number
- CN116699883A CN116699883A CN202310676875.2A CN202310676875A CN116699883A CN 116699883 A CN116699883 A CN 116699883A CN 202310676875 A CN202310676875 A CN 202310676875A CN 116699883 A CN116699883 A CN 116699883A
- Authority
- CN
- China
- Prior art keywords
- optical waveguide
- interdigital transducer
- chalcogenide
- lithium niobate
- acousto
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002360 preparation method Methods 0.000 title abstract description 11
- 230000003287 optical effect Effects 0.000 claims abstract description 83
- 150000004770 chalcogenides Chemical class 0.000 claims abstract description 49
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims abstract description 40
- 239000005387 chalcogenide glass Substances 0.000 claims abstract description 38
- 239000000758 substrate Substances 0.000 claims abstract description 27
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 16
- 239000010703 silicon Substances 0.000 claims abstract description 16
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052744 lithium Inorganic materials 0.000 claims abstract description 13
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 10
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 9
- 239000010408 film Substances 0.000 claims description 45
- 238000000034 method Methods 0.000 claims description 24
- 238000005530 etching Methods 0.000 claims description 17
- 238000011161 development Methods 0.000 claims description 16
- 239000007789 gas Substances 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 13
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 239000010409 thin film Substances 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
- 239000000853 adhesive Substances 0.000 claims description 8
- 230000001070 adhesive effect Effects 0.000 claims description 8
- 238000009616 inductively coupled plasma Methods 0.000 claims description 8
- 238000001020 plasma etching Methods 0.000 claims description 8
- 230000008569 process Effects 0.000 claims description 8
- 238000002207 thermal evaporation Methods 0.000 claims description 7
- 238000010894 electron beam technology Methods 0.000 claims description 6
- 239000003292 glue Substances 0.000 claims description 6
- 238000012545 processing Methods 0.000 claims description 6
- 229910052786 argon Inorganic materials 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 238000001312 dry etching Methods 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 238000012546 transfer Methods 0.000 claims description 4
- 238000009713 electroplating Methods 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 2
- 230000010354 integration Effects 0.000 claims description 2
- 239000008096 xylene Substances 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 12
- 239000000463 material Substances 0.000 abstract description 6
- 230000002708 enhancing effect Effects 0.000 abstract description 3
- 238000010897 surface acoustic wave method Methods 0.000 description 8
- 238000010168 coupling process Methods 0.000 description 7
- 230000008878 coupling Effects 0.000 description 6
- 238000005859 coupling reaction Methods 0.000 description 6
- 239000004038 photonic crystal Substances 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- 238000004891 communication Methods 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 230000003993 interaction Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000000411 transmission spectrum Methods 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000001808 coupling effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 1
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/11—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on acousto-optical elements, e.g. using variable diffraction by sound or like mechanical waves
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/02—Optical fibres with cladding with or without a coating
- G02B6/02057—Optical fibres with cladding with or without a coating comprising gratings
- G02B6/02076—Refractive index modulation gratings, e.g. Bragg gratings
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/26—Optical coupling means
- G02B6/28—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals
- G02B6/293—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means
- G02B6/29346—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means operating by wave or beam interference
- G02B6/2935—Mach-Zehnder configuration, i.e. comprising separate splitting and combining means
- G02B6/29352—Mach-Zehnder configuration, i.e. comprising separate splitting and combining means in a light guide
- G02B6/29353—Mach-Zehnder configuration, i.e. comprising separate splitting and combining means in a light guide with a wavelength selective element in at least one light guide interferometer arm, e.g. grating, interference filter, resonator
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/11—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on acousto-optical elements, e.g. using variable diffraction by sound or like mechanical waves
- G02F1/125—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on acousto-optical elements, e.g. using variable diffraction by sound or like mechanical waves in an optical waveguide structure
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/29—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the position or the direction of light beams, i.e. deflection
- G02F1/33—Acousto-optical deflection devices
- G02F1/332—Acousto-optical deflection devices comprising a plurality of transducers on the same crystal surface, e.g. multi-channel Bragg cell
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
- G02B2006/1204—Lithium niobate (LiNbO3)
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/30—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 grating
- G02F2201/307—Reflective grating, i.e. Bragg grating
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optical Integrated Circuits (AREA)
Abstract
The invention discloses an acoustic-optic modulator with high efficiency broadband in a shear wave working mode and a preparation method thereof, and relates to the technical field of integrated optics, wherein the acoustic-optic modulator comprises: the device comprises a silicon substrate, a silicon dioxide layer and a lithium niobate-chalcogenide glass heterogeneous layer which are sequentially arranged from bottom to top, wherein the lithium niobate-chalcogenide glass heterogeneous layer comprises a lithium niobate film and a chalcogenide optical waveguide, an interdigital transducer and reflecting grids which are integrated on the lithium niobate film in a heterogeneous manner, and a plurality of reflecting grids are symmetrically arranged relative to the interdigital transducer, and an inclined included angle is formed between the interdigital transducer and the chalcogenide optical waveguide. The invention comprehensively utilizes excellent acousto-optic characteristics of chalcogenide glass materials and the outstanding piezoelectric effect of lithium niobate films, and the interdigital transducer is arranged at an inclined included angle relative to the optical waveguide, so that the mechanical deformation of horizontal shear waves in the direction of an acoustic aperture is fully utilized, and meanwhile, the reflection grating is used for enhancing the sound waves, so that the Q value of a sound wave resonant cavity is improved, and the problem of lower acousto-optic modulation efficiency is solved while the modulation bandwidth is improved.
Description
Technical Field
The invention relates to the technical field of integrated optics, in particular to a novel broadband efficient acousto-optic modulator in a shear wave working mode and a preparation method thereof.
Background
The basic principle of the acousto-optic modulator is that when an input signal drives the transducer, the transducer generates ultrasonic waves with the same frequency as the input signal and transmits the ultrasonic waves into the acousto-optic medium, so that the acousto-optic medium generates periodic refractive index change, and the light beam can interact to load the signal onto light for transmission when passing through the acousto-optic medium. The interdigital transducer has greatly improved performance of the acoustic surface wave type acousto-optic device, improved integration of an optical system, and enhanced information transmission and processing capacity, and is widely applied to the fields of optical signal processing, optical communication, optical calculation and the like. To date, researchers have produced various acousto-optic devices with different functions, such as an acousto-optic modulator, an acousto-optic deflector, an acousto-optic filter, an acousto-optic Q-switched laser, etc., by using the surface acoustic wave technology, and the acousto-optic devices are widely applied to the fields of optical communication systems, optical communication equipment and military. However, the traditional acousto-optic modulation device has lower acousto-optic modulation efficiency due to lower electromechanical coupling coefficient and optical-mechanical coupling coefficient in the multi-field coupling process, so that the problem of lower acousto-optic modulation efficiency is solved while the modulation bandwidth is improved, and the acousto-optic modulation device has outstanding significance for research of acousto-optic modulation.
Disclosure of Invention
The invention aims to provide a broadband high-efficiency acousto-optic modulator in a shear wave working mode and a preparation method thereof, which comprehensively utilize excellent acousto-optic characteristics of chalcogenide glass materials and the outstanding piezoelectric effect of a lithium niobate film, and an interdigital transducer is arranged at an inclined included angle relative to an optical waveguide, so that mechanical deformation of horizontal shear waves in the direction of an acoustic aperture is fully utilized, and meanwhile, a reflection grid is used for enhancing sound waves, the Q value of a sound wave resonant cavity is improved, and the problem of low acousto-optic modulation efficiency is solved while the modulation bandwidth is improved.
In order to achieve the above object, the present invention provides the following solutions:
a broadband efficient acousto-optic modulator in shear wave mode of operation, comprising: the lithium niobate-chalcogenide glass comprises a silicon substrate, a silicon dioxide layer and a lithium niobate-chalcogenide glass heterogeneous layer which are sequentially arranged from bottom to top, wherein the lithium niobate-chalcogenide glass heterogeneous layer comprises a lithium niobate film and a chalcogenide optical waveguide which is heterogeneously integrated on the lithium niobate film, an interdigital transducer and a reflecting grating are further arranged on the lithium niobate film, the interdigital transducer adopts a single electrode or a double electrode structure, a plurality of reflecting gratings are symmetrically arranged relative to the interdigital transducer, and an inclined included angle is formed between the interdigital transducer and the chalcogenide optical waveguide;
under the drive of an external radio frequency electric signal, the interdigital transducer generates a surface acoustic wave through the inverse piezoelectric effect of the lithium niobate thin film, and the generated surface acoustic wave is transmitted into the chalcogenide optical waveguide to realize the interaction of a sound field and an optical field.
Further, the lithium niobate-chalcogenide glass heterogeneous layer is in a non-suspended state with respect to the silicon substrate.
Further, the chalcogenide optical waveguide is an MZI type optical waveguide, an RT runway type optical waveguide, a one-dimensional photonic crystal nano beam, a two-dimensional photonic crystal resonator or an opto-mechanical resonant cavity waveguide structure.
Further, the chalcogenide optical waveguide is an MZI type optical waveguide, and an upper arm of the MZI type optical waveguide is composed of four 90-degree small-bending-radius waveguides and a straight waveguide.
Further, the reflecting grids are provided with two groups and are respectively positioned at two sides of the interdigital transducer; wherein the interdigital transducer is arranged on the inner side of the chalcogenide optical waveguide, and the two groups of reflection grids are arranged on the outer side of the chalcogenide optical waveguide; alternatively, the interdigital transducer is arranged on the outer side of the chalcogenide optical waveguide, and the two groups of reflective grids are respectively arranged on the outer side and the inner side of the chalcogenide optical waveguide.
Further, the thickness of the lithium niobate thin film is 100 nm-1500 nm; the interdigital transducer can excite horizontal shear waves of 100 MHz-10 GHz; the width of the chalcogenide optical waveguide is 300 nm-30 um, the height is 350 nm-2500 nm, and the working wavelength is 800 nm-10000 nm.
Further, the tangential direction of the lithium niobate thin film is X- (-10) DEG) Y.
Further, the tilt angle between the interdigital transducer and the chalcogenide optical waveguide takes a value between 0 and 85 degrees.
Further, the reflecting grating and the interdigital transducer form a high-Q-value acoustic wave resonator, the reflecting grating is periodically arranged, the arrangement period of a plurality of reflecting gratings meets the acoustic wave Bragg reflection condition, and the logarithm of the reflecting grating is arranged at 50-100 pairs.
The invention also provides a preparation method of the broadband high-efficiency acousto-optic modulator in the shear wave working mode, which is applied to the broadband high-efficiency acousto-optic modulator in the shear wave working mode and comprises the following steps:
s1, depositing a layer of chalcogenide glass film on a silicon substrate covered with a silicon dioxide layer and a lithium niobate film by adopting a thermal evaporation method;
s2, manufacturing the chalcogenide optical waveguide after exposure, development and etching on the chalcogenide glass film;
s3, performing secondary exposure development, plating a layer of metal film on the chalcogenide glass film after the secondary exposure development by utilizing an evaporation or micro-electroplating method, and then finishing the manufacture of the interdigital transducer and the reflecting grating through a stripping process.
Further, the step S2 is performed after the chalcogenide glass film is etched by exposure, development and etching, and specifically includes:
s201, exposing positive electronic glue on a chalcogenide glass film formed by deposition by using an electron beam direct writing system; the thickness is about 400nm, then baking is carried out on a hot plate at 130 ℃ for 5min, and after xylene development, a mask pattern corresponding to the shape of the chalcogenide optical waveguide can be obtained on the electronic adhesive;
s202, using a reactive ion etching device, taking a mask pattern obtained on the electronic gel as a mask, and using CHF (CHF) 3 Carrying out dry etching on the gas and argon, wherein the shape of the side wall is required to be smooth and steep, the etching power is set to be 60W, the etching pressure is set to be 60mTorr, and the flow rate of the etching gas is set to be 25 sccm and 30sccm;
s203, placing the etched silicon substrate into a chamber, and removing the residual electronic glue at the top by utilizing oxygen plasma etching gas, wherein the gas flow rate is 50sccm, the radio frequency power is 20W, the inductively coupled plasma ICP power is 1000W, and after the process is finished, the mask pattern transfer processing can be completed, and the manufacturing of the chalcogenide optical waveguide is completed.
According to the specific embodiment provided by the invention, the invention discloses the following technical effects: according to the broadband high-efficiency acousto-optic modulator in the shear wave working mode and the preparation method thereof, firstly, the mixed heterogeneous integrated waveguide structure based on the lithium niobate-chalcogenide glass fully plays the excellent piezoelectric effect of the lithium niobate and the remarkable elasto-optic effect of the chalcogenide glass, and obviously improves the refractive index change amount generated by the optical waveguide; secondly, the X- (-10) DEG Y tangential lithium niobate film is adopted as a piezoelectric material, so that the electromechanical coupling coefficient is obviously improved; thirdly, the horizontal shear wave is utilized to carry out acousto-optic modulation, so that the problem of narrow bandwidth of the acoustic wave modulation is effectively solved; fourthly, the interdigital transducer and the chalcogenide optical waveguide form an inclined included angle, so that the mechanical deformation of the horizontal shear wave is fully utilized, and the modulation efficiency of the horizontal shear wave on light is improved; fifthly, reflective grids are symmetrically arranged on two sides of the interdigital transducer to form an acoustic resonant cavity, and the sound wave amplitude is enhanced through Bragg reflection. Compared with the prior art, the invention fills the gap of the high-bandwidth acousto-optic modulator.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions of the prior art, the drawings that are needed in the embodiments will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic top view of a broadband efficient acousto-optic modulator in shear wave mode of operation in accordance with an embodiment of the present invention;
FIG. 2 is a flow chart of a method for fabricating a broadband efficient acousto-optic modulator in shear wave mode of operation in accordance with an embodiment of the present invention;
FIG. 3 is a schematic top view of an acousto-optic modulator with wideband efficiency in shear wave mode of operation in accordance with a second embodiment of the present invention;
FIG. 4 is a flow chart of a method for fabricating a broadband efficient acousto-optic modulator in shear wave mode of operation in accordance with a second embodiment of the present invention;
FIG. 5 is a schematic diagram of a system for testing a broadband efficient acousto-optic modulator in shear wave mode of operation in accordance with an embodiment of the present invention.
Reference numerals illustrate: 1. si (silicon); 2. SiO (SiO) 2 (silica); 3. LiNbO 3 (lithium niobate); 4. ChG (chalcogenide glass); 5. au (gold); 6. resist (Resist, electronic or photoresist); 7. a chalcogenide optical waveguide; 8. a reflective grating; 9. interdigital transducers.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The invention aims to provide an acousto-optic modulator with high efficiency in a broadband under a shear wave working mode and a preparation method thereof, which comprehensively utilize the outstanding characteristics of an acousto-optic characteristic of a chalcogenide glass material, a high electromechanical coupling coefficient of an X- (-10 ℃) Y tangential lithium niobate film and a high bandwidth of a horizontal shear wave, and set four waveguides with small bending radius of 90 degrees on one arm to flexibly adjust the distance between the waveguides and an interdigital transducer, and utilize a metal reflecting grating to carry out acoustic wave enhancement on a single-arm and double-arm modulation structure and adjust an inclined included angle between the interdigital transducer and the chalcogenide optical waveguide to furthest utilize the mechanical strain of the horizontal shear wave.
In order that the above-recited objects, features and advantages of the present invention will become more readily apparent, a more particular description of the invention will be rendered by reference to the appended drawings and appended detailed description.
As shown in fig. 1 to 4, the present invention provides an acousto-optic modulator with high efficiency in broadband in a shear wave operation mode, including: the lithium niobate-chalcogenide glass heterojunction layer comprises a lithium niobate film and a chalcogenide optical waveguide 7 which is integrated on the lithium niobate film in a heterogeneous manner, wherein the lithium niobate film is further provided with an interdigital transducer 9 and a reflecting grating 8, the interdigital transducer 9 adopts a single electrode or double electrode structure, a plurality of reflecting gratings 8 are symmetrically arranged relative to the interdigital transducer 9, and an inclined included angle is formed between the interdigital transducer 9 and the chalcogenide optical waveguide 7; the interdigital transducer 9 and the chalcogenide optical waveguide 7 form an inclined included angle, and mechanical deformation of horizontal shear waves in the acoustic aperture direction of the interdigital transducer 9 is fully utilized. Illustratively, the tilt angle between the interdigital transducer 9 and the chalcogenide optical waveguide 7 may take a value between 0 and 85 degrees.
The interdigital transducer 9 comprises a number of interdigital electrodes. The interdigital transducer can effectively improve the bandwidth of sound waves under a double-electrode structure. The reflecting grating 8 is a metal reflecting grating.
Under the drive of an external radio frequency electric signal, the interdigital transducer generates a surface acoustic wave through the inverse piezoelectric effect of the lithium niobate thin film, and the generated surface acoustic wave is transmitted into the chalcogenide optical waveguide to realize the interaction of a sound field and an optical field.
The silicon substrate is formed by adopting a material silicon 1, a silicon dioxide layer is formed by adopting silicon dioxide 2 on the silicon substrate, a lithium niobate 3 is arranged on the silicon dioxide layer to form a lithium niobate film, and an interdigital transducer and a reflecting gate adopt gold 5; the chalcogenide optical waveguide uses chalcogenide glass 4.
In particular, the lithium niobate-chalcogenide glass heterogeneous layer is in a non-suspended state with respect to a silicon substrate.
Illustratively, the chalcogenide optical waveguide is a MZI-type optical waveguide, an RT racetrack type optical waveguide, a one-dimensional photonic crystal nanobeam, a two-dimensional photonic crystal resonator, or an opto-mechanical resonant cavity waveguide structure. Preferably, the chalcogenide optical waveguide is an MZI-type optical waveguide, and an upper arm of the MZI-type optical waveguide is composed of four 90-degree small bending radius waveguides and a straight waveguide.
The reflection grids and the interdigital transducer form a high Q value acoustic wave resonator, the reflection grids are arranged periodically, and the arrangement period of a plurality of reflection grids meets the condition of Bragg reflection of the acoustic wave.
Two sets of the reflective grating are arranged in pairs, and the number of pairs of the reflective grating is, for example, 50-100 pairs.
The thickness of the lithium niobate thin film is 100 nm-1500 nm; the interdigital transducer can excite horizontal shear waves of 100 MHz-10 GHz, and can realize the working bandwidth of 400 MHz-600 MHz; the width of the chalcogenide optical waveguide is 300 nm-30 um, the height is 350 nm-2500 nm, and the working wavelength is 800 nm-10000 nm.
In particular, the tangential direction of the lithium niobate thin film is X- (-10 ℃) Y, the horizontal shear wave electromechanical coupling coefficient excited by the tangential direction is highest, and the sound wave bandwidth is largest. Wherein X- (-10) Y represents cutting along the X-axis and sound waves propagate along the Y-axis in a direction rotated 10 degrees in a clockwise direction.
The working principle of the broadband efficient acousto-optic modulator in the shear wave working mode is as follows:
the microwave is input into the process of generating the surface acoustic wave, the input microwave signal is converted into the lithium niobate film surface acoustic wave signal through the interdigital transducer based on the inverse piezoelectric coupling effect of the lithium niobate film, so that the lithium niobate film has mechanical strain field distribution, the horizontal shear wave generated on the surface of the lithium niobate film further acts on the optical waveguide, the optical refractive index of the optical waveguide is changed based on the optomechanical coupling effect (moving boundary effect, elasto-optical effect and electro-optical effect), and the change of the refractive index can be converted into the change of the phase through the waveguide structures such as MZI type waveguide, RT runway type waveguide, one-dimensional photonic crystal nano beam, two-dimensional photonic crystal resonator or optomechanical resonant cavity. The metal reflecting grating can reflect the sound wave excited by the interdigital transducer, and the reflected sound wave and the excited sound wave are coherent and constructive, so that the amplitude of the sound wave is greatly enhanced, and the acousto-optic interaction strength is obviously enhanced.
The invention also provides a preparation method of the broadband high-efficiency acousto-optic modulator in the shear wave working mode, which is applied to the broadband high-efficiency acousto-optic modulator in the shear wave working mode and comprises the following steps:
s1, depositing a layer of chalcogenide glass film on a silicon substrate covered with a silicon dioxide layer and a lithium niobate film by adopting a thermal evaporation method;
s2, manufacturing the chalcogenide optical waveguide after exposure, development and etching on the chalcogenide glass film;
s3, performing secondary exposure development, plating a layer of metal film on the chalcogenide glass film after the secondary exposure development by utilizing an evaporation or micro-electroplating method, and then finishing the manufacture of the interdigital transducer and the reflecting grating through a stripping process.
Embodiment one:
in the first embodiment, as shown in fig. 1, the reflective grating 8 is provided with two groups, which are respectively located at two sides of the interdigital transducer 9; the interdigital transducer 9 is arranged on the outer side of the chalcogenide optical waveguide 7, and the two groups of reflective gratings 8 are respectively arranged on the outer side and the inner side of the chalcogenide optical waveguide 7 at a specific frequency. The two groups of reflecting grids 8 on the inner side and the outer side of the chalcogenide optical waveguide 7 are symmetrical about the center of the interdigital transducer 9, and the placement position can maximally enhance the sound wave amplitude.
The single-arm modulation structure is characterized in that under a specific frequency, the logarithm of the interdigital transducer meets the impedance matching condition, and the interdigital transducer is arranged on one side of the chalcogenide optical waveguide.
As shown in fig. 2, taking a chalcogenide optical waveguide as an MZI type optical waveguide as an example, a method for preparing a broadband efficient acousto-optic modulator in a shear wave working mode in the first embodiment is described, which specifically includes the following steps:
s1, depositing Ge with the thickness of 850nm on a silicon substrate covered with a lithium niobate thin film by adopting a thermal evaporation method 25 Sb 10 S 65 A chalcogenide glass film;
s2, exposing positive electronic paste (APR 6200) on a prepared ChG film by using an electron beam direct writing system (EBL, vistecEBPG 5000+); the thickness is about 400nm, and then the mask pattern with the MZI shape can be obtained on the electronic gel after baking for 5min on a hot plate with the temperature of 130 ℃ and developing by using dimethylbenzene;
s3, using the reactive ion etching equipment, taking the graph obtained on the electronic gel as a mask, and using CHF (CHF) 3 Carrying out dry etching on the gas and argon, and requiring the side wall to be smooth and steep; setting the etching power to be 60W, the etching air pressure to be 60mTorr, and the etching air flow rate to be 25 sccm and 30sccm;
s4, placing the etched substrate into a chamber, and removing the residual electronic glue at the top by utilizing oxygen plasma etching gas, wherein the gas flow rate is 50sccm, the radio frequency power is 20W, the inductively coupled plasma ICP power is 1000W, and the transfer processing of the MZI pattern on the substrate can be completed after the process is finished;
s5, exposing positive electron paste (APR 6200) on the etched substrate by using an electron beam direct writing system (EBL, vistecEBPG 5000+); the thickness is about 500nm, then baking is carried out on a hot plate at 130 ℃ for 5min, and then the mask patterns of the interdigital transducer and the reflecting grating can be obtained on the electronic adhesive after development by using dimethylbenzene;
s6, depositing gold with the thickness of about 100nm on the substrate after development and exposure by a thermal evaporation method;
and S7, immersing the deposited substrate in an organic solution (such as acetone) to remove the electronic adhesive on the surface of the substrate and the metal film on the electronic adhesive, thereby completing the manufacture of the interdigital transducer and the reflecting grating.
Fig. 5 is a schematic diagram of a testing system according to the present invention, where the testing system mainly includes: tunable quantum cascade laser, erbium-doped fiber amplifier, photoelectric detector, vector network analyzer, and spectrometer.
During testing, microwave signals with certain frequency are loaded on the interdigital transducer, at the moment, converging surface acoustic waves which are propagated to two sides can be excited under the action of the inverse piezoelectric effect of the lithium niobate thin film, and the sound waves act on the optical waveguide to finish the conversion of microwaves and light waves. Under the action of sound waves, the equivalent refractive index of the optical waveguide is changed, so that the phase of an optical signal is further changed, and finally intensity modulation is realized. The output optical signal is converted into an electric signal through the photoelectric detector, and the S of the modulated signal can be obtained after the electric signal passes through the network analyzer 21 Transmission spectrum, on the one hand, can be obtained by S 21 The transmission spectrum is calculated to obtain the acousto-optic modulation bandwidth, alternatively, the bandwidth can be calculated by comparing S with 21 The analysis of the transmission spectrum can calculate the voltage needed to be loaded for changing pi phase, and further multiplies the calculated voltage by the length of the modulation area to obtain a half-wave voltage length product, so that the conversion efficiency and the modulation performance of the acousto-optic modulator are evaluated. The output signal is subjected to a spectrometer to observe the modulated first-order sideband signal, and the maximum conversion efficiency of the sideband can be calculated.
Embodiment two:
in the second embodiment, as shown in fig. 3, two groups of reflective gratings 8 are disposed on two sides of the interdigital transducer 9; in the double-arm modulation structure, under a specific frequency, the interdigital transducer 9 is arranged on the inner side of the chalcogenide optical waveguide, and two groups of reflection grids 8 are arranged on the outer sides of two arms of the chalcogenide optical waveguide 7; the distance between the reflecting grating 8 and the chalcogenide optical waveguide 7 can maximize the acoustic wave amplitude.
The two-arm modulation structure has an odd number of interdigital indexes of the interdigital transducer for the MZI type optical waveguide under a specific frequency; for the RT runway type optical waveguide, the interdigital indexes of the interdigital transducers are even, the interdigital transducers are arranged between two arms of the optical waveguide, and the distances between the centers of the interdigital transducers and the two arms of the optical waveguide are the same.
The second embodiment of the invention provides a broadband high-efficiency acousto-optic modulator under an MZI type double-arm shear wave working mode, which mainly comprises an odd-numbered pair of interdigital transducers on a lithium niobate film, a metal reflecting grating and a sulfur MZI type optical waveguide heterogeneous-integrated on the film, wherein the waveguide works in a communication wave band near 1550nm, and the working bandwidth of the interdigital transducers can reach 400 MHz-600 MHz while the interdigital transducers generate 1GHz acoustic surface waves. The interdigital transducer is arranged in the optical waveguide to fully utilize the sound wave energy and simultaneously carry out push-pull modulation, and the reflecting grating can obviously enhance the intensity of sound waves outside the two arms, thereby greatly enhancing the interaction intensity of sound and light.
As shown in fig. 4, the preparation method of the broadband efficient acousto-optic modulator in the shear wave working mode based on the MZI type double arms specifically comprises the following steps:
s1, depositing a Ge25Sb10S65 chalcogenide glass film with the thickness of 850nm on a lithium niobate film-covered substrate by adopting a thermal evaporation method;
s2, exposing positive electronic paste (APR 6200) on a prepared ChG film by using an electron beam direct writing system (EBL, vistecEBPG 5000+); the thickness is about 400nm, and then the mask pattern with the MZI shape can be obtained on the electronic gel after baking for 5min on a hot plate with the temperature of 130 ℃ and developing by using dimethylbenzene;
s3, using a reactive ion etching device, taking a pattern obtained on the electronic gel as a mask, and carrying out dry etching by means of CHF3 gas and argon gas, wherein the side wall is required to be smooth and steep; setting the etching power to be 60W, the etching air pressure to be 60mTorr, and the etching air flow rate to be 25 sccm and 30sccm;
s4, placing the etched substrate into a chamber, and removing the residual electronic glue at the top by utilizing oxygen plasma etching gas, wherein the gas flow rate is 50sccm, the radio frequency power is 20W, the inductively coupled plasma ICP power is 1000W, and the transfer processing of the MZI pattern on the substrate can be completed after the process is finished;
s5, exposing the positive electronic paste (APR 6200) on the etched substrate by using an electron beam direct writing system (EBL, vistecEBPG 5000+); the thickness is about 500nm, then baking is carried out on a hot plate at 130 ℃ for 5min, and then the mask patterns of the interdigital transducer and the reflecting grating can be obtained on the electronic adhesive after development by using dimethylbenzene;
s6, depositing gold with the thickness of about 100nm on the substrate after development and exposure by a thermal evaporation method;
and S7, immersing the deposited substrate in an organic solution (such as acetone) to remove the electronic adhesive on the surface of the substrate and the metal film on the electronic adhesive, thereby completing the manufacture of the interdigital transducer and the reflecting grating.
The corresponding test system and test steps of the second embodiment are the same as those of the first embodiment.
In summary, the novel broadband high-efficiency acousto-optic modulator in the shear wave working mode and the preparation method thereof provided by the invention have the advantages that firstly, the mixed heterogeneous integrated waveguide structure based on lithium niobate-chalcogenide glass fully plays the excellent piezoelectric effect of lithium niobate and the remarkable elasto-optic effect of chalcogenide glass, and obviously improves the refractive index change amount generated by the optical waveguide; secondly, the X- (10 DEG) Y lithium niobate film is used as a piezoelectric material, so that the electromechanical coupling coefficient is obviously improved; thirdly, the horizontal shear wave is utilized to carry out acousto-optic modulation, so that the problem of narrow bandwidth of the acoustic wave modulation is effectively solved; fourth, interdigital transducer and light waveguide form the inclined contained angle and put, make full use of horizontal shear wave's deformation, improved horizontal shear wave to the modulation efficiency of light. Fifthly, metal reflecting grids are arranged at two ends of the interdigital transducer to form an acoustic resonant cavity, and the sound wave amplitude is enhanced through Bragg reflection. Compared with the prior art, the proposal of the proposal fills the blank of the high-bandwidth acousto-optic modulator.
The principles and embodiments of the present invention have been described herein with reference to specific examples, the description of which is intended only to assist in understanding the methods of the present invention and the core ideas thereof; also, it is within the scope of the present invention to be modified by those of ordinary skill in the art in light of the present teachings. In summary, the present description should not be construed as limiting the invention.
Claims (9)
1. A broadband efficient acousto-optic modulator in shear wave mode of operation, comprising: silicon substrate, silicon dioxide layer and lithium niobate-chalcogenide glass heterogeneous layer that follow supreme setting gradually down, wherein, lithium niobate-chalcogenide glass heterogeneous layer includes the lithium niobate film and the chalcogenide optical waveguide of heterogeneous integration on the lithium niobate film, still be provided with interdigital transducer and reflecting grating on the lithium niobate film, interdigital transducer adopts single electrode or bipolar electrode structure, a plurality of reflecting grating is about interdigital transducer symmetry sets up, interdigital transducer with form the slope contained angle between the chalcogenide optical waveguide.
2. The broadband efficient acousto-optic modulator in shear wave mode of operation according to claim 1, wherein said lithium niobate-chalcogenide glass hetero-layer is in a non-suspended state with respect to a silicon substrate.
3. The broadband efficient acousto-optic modulator in shear wave mode of operation according to claim 1, wherein the reflective grating is provided with two groups, one on each side of the interdigital transducer; wherein the interdigital transducer is arranged on the inner side of the chalcogenide optical waveguide, and the two groups of reflection grids are arranged on the outer side of the chalcogenide optical waveguide; alternatively, the interdigital transducer is arranged on the outer side of the chalcogenide optical waveguide, and the two groups of reflective grids are respectively arranged on the outer side and the inner side of the chalcogenide optical waveguide.
4. The broadband efficient acousto-optic modulator in shear wave mode of operation according to claim 1, wherein the thickness of the lithium niobate thin film is 100nm to 1500nm; the interdigital transducer can excite horizontal shear waves of 100 MHz-10 GHz; the width of the chalcogenide optical waveguide is 300 nm-30 um, the height is 350 nm-2500 nm, and the working wavelength is 800 nm-10000 nm.
5. The broadband efficient acousto-optic modulator in shear wave mode of operation according to claim 1, wherein the tangential direction of the lithium niobate thin film is X- (-10 °) Y.
6. The broadband efficient acousto-optic modulator in shear wave mode of operation according to claim 1, wherein the tilt angle between the interdigital transducer and the chalcogenide optical waveguide takes a value between 0 and 85 degrees.
7. The broadband high-efficiency acousto-optic modulator in a shear wave operation mode according to claim 1, wherein the reflective grating and the interdigital transducer form a high-Q acoustic wave resonator, the reflective grating is periodically arranged, the arrangement period of a plurality of reflective gratings satisfies the condition of acoustic bragg reflection, and the logarithmic number of the reflective gratings is set at 50-100 pairs.
8. A method for manufacturing a wideband high-efficiency acousto-optic modulator in a shear wave operation mode, which is characterized by being applied to the wideband high-efficiency acousto-optic modulator in the shear wave operation mode according to any one of claims 1 to 7, comprising the following steps:
s1, depositing a layer of chalcogenide glass film on a silicon substrate covered with a silicon dioxide layer and a lithium niobate film by adopting a thermal evaporation method;
s2, manufacturing the chalcogenide optical waveguide after exposure, development and etching on the chalcogenide glass film;
s3, performing secondary exposure development, plating a layer of metal film on the chalcogenide glass film after the secondary exposure development by utilizing an evaporation or micro-electroplating method, and then finishing the manufacture of the interdigital transducer and the reflecting grating through a stripping process.
9. The method for manufacturing an acousto-optic modulator with high efficiency in broadband in a shear wave operation mode according to claim 8, wherein the step S2 is performed by exposing, developing and etching a chalcogenide glass film to complete the manufacturing of a chalcogenide optical waveguide, and specifically comprises the following steps:
s201, exposing positive electronic glue on a chalcogenide glass film formed by deposition by using an electron beam direct writing system; the thickness is about 400nm, then baking is carried out on a hot plate at 130 ℃ for 5min, and after xylene development, a mask pattern corresponding to the shape of the chalcogenide optical waveguide can be obtained on the electronic adhesive;
s202, using a reactive ion etching device, taking a mask pattern obtained on the electronic gel as a mask, and using CHF (CHF) 3 Carrying out dry etching on the gas and argon, wherein the shape of the side wall is required to be smooth and steep, the etching power is set to be 60W, the etching pressure is set to be 60mTorr, and the flow rate of the etching gas is set to be 25 sccm and 30sccm;
s203, placing the etched silicon substrate into a chamber, and removing the residual electronic glue at the top by utilizing oxygen plasma etching gas, wherein the gas flow rate is 50sccm, the radio frequency power is 20W, the inductively coupled plasma ICP power is 1000W, and after the process is finished, the mask pattern transfer processing can be completed, and the manufacturing of the chalcogenide optical waveguide is completed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310676875.2A CN116699883A (en) | 2023-06-08 | 2023-06-08 | Broadband efficient acousto-optic modulator in shear wave working mode and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310676875.2A CN116699883A (en) | 2023-06-08 | 2023-06-08 | Broadband efficient acousto-optic modulator in shear wave working mode and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116699883A true CN116699883A (en) | 2023-09-05 |
Family
ID=87832083
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310676875.2A Pending CN116699883A (en) | 2023-06-08 | 2023-06-08 | Broadband efficient acousto-optic modulator in shear wave working mode and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116699883A (en) |
-
2023
- 2023-06-08 CN CN202310676875.2A patent/CN116699883A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| WO2005089332A2 (en) | Low loss electrodes for electro-optic modulators | |
| CN113204134B (en) | On-chip mid-infrared acousto-optic modulator and preparation method thereof | |
| CN210690981U (en) | Adjustable optical phase array | |
| CN113933941A (en) | Vertical coupling grating coupler based on binary blazed sub-wavelength grating and preparation method | |
| CN117590628A (en) | Optical device based on thin film lithium niobate waveguide, preparation method and working method | |
| CN114859579A (en) | Novel push-pull type efficient broadband acousto-optic modulator and preparation method thereof | |
| CN216352386U (en) | Integrated light quantum computing chip | |
| JP2000137125A (en) | Method for manufacturing diffusion type optical waveguide structure onto substrate | |
| CN116699883A (en) | Broadband efficient acousto-optic modulator in shear wave working mode and preparation method thereof | |
| WO2018218106A1 (en) | Saw modulators with phase and angle selective optical coatings | |
| CN112862103A (en) | Integrated light quantum computing chip and preparation method thereof | |
| CN114995010B (en) | Silicon-based three-dimensional waveguide mode optical switch based on phase change material | |
| CN116774470A (en) | Enhanced acousto-optic modulator with medium reflection grating structure and preparation method thereof | |
| WO2021014606A1 (en) | Plasmonic waveguide | |
| CN116088205A (en) | Acousto-optic modulator with unidirectional electrode structure | |
| Sun et al. | Piezoelectrically coupling surface acoustic waves to silicon waveguides. | |
| US20090040579A1 (en) | Submicron Structures In Dye-Doped Polymer Materials | |
| CN114859578A (en) | High-efficiency on-chip acousto-optic deflector and preparation method thereof | |
| CN113820901A (en) | On-chip integrated frequency doubling device and preparation method thereof | |
| CHANG | Guided-wave two-dimensional acousto-optic scanner using proton-exchanged lithium niobate waveguide | |
| CN117250806A (en) | Lithium niobate film-thio integrated on-chip acousto-optic regulating and controlling device and preparation method thereof | |
| Shao et al. | Acoustically mediated microwave-to-optical conversion on thin-film lithium niobate | |
| CN111708188B (en) | Lithium tantalate film waveguide acousto-optic modulator | |
| CN218547190U (en) | High-efficiency frequency doubling device based on micron optical fiber integration | |
| CN116931367B (en) | Lithium niobate thin film ridge waveguide modulator and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |