CN116659740A - MEMS device vacuum measurement method, device, computer equipment and storage medium - Google Patents

MEMS device vacuum measurement method, device, computer equipment and storage medium Download PDF

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CN116659740A
CN116659740A CN202310446718.2A CN202310446718A CN116659740A CN 116659740 A CN116659740 A CN 116659740A CN 202310446718 A CN202310446718 A CN 202310446718A CN 116659740 A CN116659740 A CN 116659740A
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quality factor
air pressure
mems device
damping
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董显山
黄鑫龙
路国光
周斌
赖灿雄
黄钦文
苏伟
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China Electronic Product Reliability and Environmental Testing Research Institute
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    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L21/00Vacuum gauges
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Abstract

The application relates to a MEMS device vacuum degree measuring method, a device, computer equipment, a storage medium and a computer program product. The method comprises the following steps: acquiring a quality factor of the MEMS device under the vacuum packaging condition; acquiring quality factors of the MEMS device under different air pressure conditions; fitting according to quality factors under different air pressure conditions to obtain a fitting equation; and calculating based on the fitting equation and the quality factor under the vacuum packaging condition to obtain the intracavity vacuum degree of the MEMS device. According to the whole scheme, by measuring the quality factors of the MEMS device under different air pressure conditions and fitting according to the quality factors under different air pressure conditions, a fitting equation is obtained, the correlation between the air pressure and the quality factors can be accurately described by the fitting equation, and then the calculation is carried out according to the fitting equation and the quality factors under vacuum packaging conditions, so that the intracavity vacuum degree of the MEMS device can be accurately obtained.

Description

MEMS器件真空度测量方法、装置、计算机设备和存储介质MEMS device vacuum measurement method, device, computer equipment and storage medium

技术领域technical field

本申请涉及气体检测技术领域,特别是涉及一种MEMS器件真空度测量方法、装置、计算机设备、存储介质和计算机程序产品。The present application relates to the technical field of gas detection, in particular to a MEMS device vacuum measurement method, device, computer equipment, storage medium and computer program product.

背景技术Background technique

MEMS(Micro Electro Mechanical System),即微型机械电子系统。MEMS器件一般包括微型执行器、微型传感器和信号处理电路等部分,涉及了机械、电子、材料、信息和自动控制等多种学科。由于MEMS器件一般是用硅微加工工艺制造,同一批次下可生产成百上千片MEMS芯片,且MEMS芯片的微型化使它的工作能耗低,因此MEMS器件具有成本低、耗能低、体积小等优点,在汽车电子、医疗器械、地质勘探和航空航天等领域被广泛使用。MEMS (Micro Electro Mechanical System), that is, micro mechanical electronic system. MEMS devices generally include micro-actuators, micro-sensors, and signal processing circuits, involving various disciplines such as mechanics, electronics, materials, information, and automatic control. Because MEMS devices are generally manufactured by silicon micromachining technology, hundreds of MEMS chips can be produced in the same batch, and the miniaturization of MEMS chips makes its work energy consumption low, so MEMS devices have low cost and low energy consumption. , small size and other advantages, it is widely used in automotive electronics, medical equipment, geological exploration and aerospace and other fields.

目前,通常采用真空封装技术以提高MEMS器件性能。然而,传统的真空封装技术存在可靠性问题,会出现封装材料释气和气密性泄露的问题,导致真空封装MEMS器件密封腔内的真空度降低。因此,研究一种用于真空封装MEMS器件密封腔内真空度的测量方法显得尤为重要。At present, vacuum packaging technology is usually used to improve the performance of MEMS devices. However, the traditional vacuum packaging technology has reliability problems, such as outgassing of packaging materials and leakage of airtightness, resulting in a decrease in the vacuum degree in the sealed cavity of vacuum-packaged MEMS devices. Therefore, it is particularly important to study a method for measuring the vacuum degree in the sealed cavity of vacuum-packaged MEMS devices.

发明内容Contents of the invention

基于此,有必要针对上述技术问题,提供一种准确的MEMS器件真空度测量方法、装置、计算机设备、计算机可读存储介质和计算机程序产品。Based on this, it is necessary to provide an accurate method, device, computer equipment, computer-readable storage medium and computer program product for measuring the vacuum degree of MEMS devices in view of the above technical problems.

第一方面,本申请提供了一种MEMS器件真空度测量方法。所述方法包括:In a first aspect, the present application provides a method for measuring vacuum degree of a MEMS device. The methods include:

获取MEMS器件在真空封装条件下的品质因数;Obtain the quality factor of MEMS devices under vacuum packaging conditions;

获取所述MEMS器件在不同气压条件下的品质因数;Obtaining the quality factor of the MEMS device under different air pressure conditions;

根据所述不同气压条件下的品质因数进行拟合,得到拟合方程;Fitting is carried out according to the quality factors under the different air pressure conditions to obtain a fitting equation;

基于所述拟合方程以及所述真空封装条件下的品质因数进行计算,得到MEMS器件的腔内真空度。Calculation is performed based on the fitting equation and the quality factor under the vacuum packaging condition to obtain the vacuum degree in the cavity of the MEMS device.

在其中一个实施例中,所述根据所述不同气压条件下的品质因数进行拟合,得到拟合方程包括:In one of the embodiments, the fitting is performed according to the quality factors under the different air pressure conditions, and the fitting equation obtained includes:

获取品质因数与气压之间的相关关系,所述相关关系包括正相关关系以及负相关关系;Obtain the correlation between the quality factor and the air pressure, the correlation includes a positive correlation and a negative correlation;

基于最小二乘法以及所述品质因数与气压之间的相关关系,对所述不同气压条件下的品质因数进行线性拟合,得到拟合方程。Based on the least square method and the correlation between the quality factor and air pressure, linear fitting is performed on the quality factor under the different air pressure conditions to obtain a fitting equation.

在其中一个实施例中,所述获取品质因数与气压之间的相关关系包括:In one of the embodiments, the obtained correlation between the quality factor and air pressure includes:

获取不同类型阻尼的阻尼表达式;Get damping expressions for different types of damping;

基于所述不同类型阻尼的阻尼表达式,确定不同类型阻尼影响下的品质因数表达式;Based on the damping expressions of the different types of damping, determine the quality factor expression under the influence of different types of damping;

根据理想气体状态方程以及所述不同类型阻尼影响下的品质因数表达式,确定品质因数与气压之间的相关关系。According to the ideal gas state equation and the expression of the quality factor under the influence of different types of damping, the correlation between the quality factor and the air pressure is determined.

在其中一个实施例中,所述获取不同类型阻尼的阻尼表达式包括:In one of the embodiments, the damping expressions for obtaining different types of damping include:

获取压膜阻尼表达式以及滑膜阻尼表达式;Obtain the compression film damping expression and the synovial film damping expression;

所述基于所述不同类型阻尼的阻尼表达式,确定不同类型阻尼影响下的品质因数表达式包括:The described damping expression based on the different types of damping, determining the quality factor expression under the influence of different types of damping includes:

基于所述压膜阻尼表达式以及所述滑膜阻尼表达式,确定压膜阻尼影响下的第一品质因数表达式以及滑膜阻尼影响下的第二品质因数表达式;Based on the compression film damping expression and the synovial film damping expression, determining a first quality factor expression under the influence of compression film damping and a second quality factor expression under the influence of synovial film damping;

所述根据理想气体状态方程以及所述不同类型阻尼影响下的品质因数表达式,确定品质因数与气压之间的相关关系包括:According to the ideal gas state equation and the quality factor expressions under the influence of different types of damping, determining the correlation between the quality factor and the air pressure includes:

根据理想气体状态方程以及所述第一品质因数表达式,确定第一品质因数与气压之间的相关关系;Determine the correlation between the first quality factor and air pressure according to the ideal gas state equation and the first quality factor expression;

根据理想气体状态方程以及所述第二品质因数表达式,确定第二品质因数与气压之间的相关关系;According to the ideal gas state equation and the second quality factor expression, determine the correlation between the second quality factor and the air pressure;

在所述第一品质因数与气压之间的相关关系与所述第二品质因数与气压之间的相关关系相同的情况下,得到品质因数与气压之间的相关关系。In a case where the correlation between the first quality factor and air pressure is the same as the correlation between the second quality factor and air pressure, a correlation between the quality factor and air pressure is obtained.

在其中一个实施例中,所述获取MEMS器件在真空封装条件下的品质因数包括:In one of the embodiments, said obtaining the figure of merit of the MEMS device under vacuum packaging conditions comprises:

基于扫频法,获取MEMS器件在真空封装条件下的品质因数。Based on the frequency sweep method, the quality factor of MEMS devices under the condition of vacuum packaging is obtained.

在其中一个实施例中,所述获取MEMS器件在真空封装条件下的品质因数包括:In one of the embodiments, said obtaining the figure of merit of the MEMS device under vacuum packaging conditions comprises:

基于震荡衰减法,获取MEMS器件在真空封装条件下的品质因数。Based on the oscillation attenuation method, the quality factor of MEMS devices under vacuum packaging conditions is obtained.

在其中一个实施例中,所述获取所述MEMS器件在不同气压条件下的品质因数包括:In one of the embodiments, the obtaining the quality factor of the MEMS device under different air pressure conditions includes:

获取气压集合,基于所述气压集合,确定预设气压序列;Acquire a set of air pressure, and determine a preset air pressure sequence based on the set of air pressure;

将所述MEMS器件置于所述预设气压序列中每一气压环境下,获取所述MEMS器件在每一气压环境条件下的品质因数。The MEMS device is placed in each air pressure environment in the preset air pressure sequence, and the quality factor of the MEMS device under each air pressure environment condition is obtained.

第二方面,本申请还提供了一种MEMS器件真空度测量装置。所述装置包括:In the second aspect, the present application also provides a vacuum degree measuring device for MEMS devices. The devices include:

第一获取模块,用于获取MEMS器件在真空封装条件下的品质因数;The first acquisition module is used to acquire the quality factor of the MEMS device under vacuum packaging conditions;

第二获取模块,用于获取所述MEMS器件在不同气压条件下的品质因数;The second acquisition module is used to acquire the quality factor of the MEMS device under different air pressure conditions;

拟合模块,用于根据所述不同气压条件下的品质因数进行拟合,得到拟合方程;A fitting module is used for fitting according to the quality factor under the different air pressure conditions to obtain a fitting equation;

计算模块,用于基于所述拟合方程以及所述真空封装条件下的品质因数进行计算,得到MEMS器件的腔内真空度。The calculation module is used to perform calculation based on the fitting equation and the quality factor under the vacuum packaging condition to obtain the vacuum degree in the cavity of the MEMS device.

第三方面,本申请还提供了一种计算机设备。所述计算机设备包括存储器和处理器,所述存储器存储有计算机程序,所述处理器执行所述计算机程序时实现以下步骤:In a third aspect, the present application also provides a computer device. The computer device includes a memory and a processor, the memory stores a computer program, and the processor implements the following steps when executing the computer program:

获取MEMS器件在真空封装条件下的品质因数;Obtain the quality factor of MEMS devices under vacuum packaging conditions;

获取所述MEMS器件在不同气压条件下的品质因数;Obtaining the quality factor of the MEMS device under different air pressure conditions;

根据所述不同气压条件下的品质因数进行拟合,得到拟合方程;Fitting is carried out according to the quality factors under the different air pressure conditions to obtain a fitting equation;

基于所述拟合方程以及所述真空封装条件下的品质因数进行计算,得到MEMS器件的腔内真空度。Calculation is performed based on the fitting equation and the quality factor under the vacuum packaging condition to obtain the vacuum degree in the cavity of the MEMS device.

第四方面,本申请还提供了一种计算机可读存储介质。所述计算机可读存储介质,其上存储有计算机程序,所述计算机程序被处理器执行时实现以下步骤:In a fourth aspect, the present application also provides a computer-readable storage medium. The computer-readable storage medium has a computer program stored thereon, and when the computer program is executed by a processor, the following steps are implemented:

获取MEMS器件在真空封装条件下的品质因数;Obtain the quality factor of MEMS devices under vacuum packaging conditions;

获取所述MEMS器件在不同气压条件下的品质因数;Obtaining the quality factor of the MEMS device under different air pressure conditions;

根据所述不同气压条件下的品质因数进行拟合,得到拟合方程;Fitting is carried out according to the quality factors under the different air pressure conditions to obtain a fitting equation;

基于所述拟合方程以及所述真空封装条件下的品质因数进行计算,得到MEMS器件的腔内真空度。Calculation is performed based on the fitting equation and the quality factor under the vacuum packaging condition to obtain the vacuum degree in the cavity of the MEMS device.

第五方面,本申请还提供了一种计算机程序产品。所述计算机程序产品,包括计算机程序,该计算机程序被处理器执行时实现以下步骤:In a fifth aspect, the present application also provides a computer program product. The computer program product includes a computer program, and when the computer program is executed by a processor, the following steps are implemented:

获取MEMS器件在真空封装条件下的品质因数;Obtain the quality factor of MEMS devices under vacuum packaging conditions;

获取所述MEMS器件在不同气压条件下的品质因数;Obtaining the quality factor of the MEMS device under different air pressure conditions;

根据所述不同气压条件下的品质因数进行拟合,得到拟合方程;Fitting is carried out according to the quality factors under the different air pressure conditions to obtain a fitting equation;

基于所述拟合方程以及所述真空封装条件下的品质因数进行计算,得到MEMS器件的腔内真空度。Calculation is performed based on the fitting equation and the quality factor under the vacuum packaging condition to obtain the vacuum degree in the cavity of the MEMS device.

上述MEMS器件真空度测量方法、装置、计算机设备、存储介质和计算机程序产品,获取MEMS器件在真空封装条件下的品质因数;获取MEMS器件在不同气压条件下的品质因数;根据不同气压条件下的品质因数进行拟合,得到拟合方程;基于拟合方程以及真空封装条件下的品质因数进行计算,得到MEMS器件的腔内真空度。整个方案通过测量MEMS器件在不同气压条件下的品质因数,根据不同气压条件下的品质因数进行拟合,得到拟合方程,拟合方程可以准确描述气压与品质因数之间的相关关系,进而根据拟合方程以及真空封装条件下的品质因数进行计算,可以准确地得到MEMS器件的腔内真空度。The above method, device, computer equipment, storage medium and computer program product for measuring the vacuum degree of MEMS devices obtain the quality factor of the MEMS device under vacuum packaging conditions; obtain the quality factors of the MEMS device under different air pressure conditions; according to the quality factors under different air pressure conditions The quality factor is fitted to obtain the fitting equation; based on the fitting equation and the quality factor under vacuum packaging conditions, the vacuum degree in the cavity of the MEMS device is obtained. The whole scheme measures the quality factor of the MEMS device under different air pressure conditions, and performs fitting according to the quality factor under different air pressure conditions to obtain a fitting equation. The fitting equation can accurately describe the correlation between air pressure and quality factor, and then according to The fitting equation and the quality factor under vacuum packaging conditions can be calculated to accurately obtain the vacuum degree in the cavity of the MEMS device.

附图说明Description of drawings

为了更清楚地说明本申请实施例或传统技术中的技术方案,下面将对实施例或传统技术描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本申请的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。In order to more clearly illustrate the technical solutions in the embodiments of the present application or the conventional technology, the following will briefly introduce the accompanying drawings that need to be used in the description of the embodiments or the traditional technology. Obviously, the accompanying drawings in the following description are only the present invention For some embodiments of the application, those skilled in the art can also obtain other drawings based on these drawings without creative work.

图1为一个实施例中MEMS器件真空度测量方法的应用环境图;Fig. 1 is the application environment figure of MEMS device vacuum degree measuring method in an embodiment;

图2为一个实施例中MEMS器件真空度测量方法的流程示意图;Fig. 2 is a schematic flow chart of a MEMS device vacuum measurement method in one embodiment;

图3为另一个实施例中MEMS器件真空度测量的流程示意图;Fig. 3 is the schematic flow chart of MEMS device vacuum degree measurement in another embodiment;

图4为另一个实施例中不同类型阻尼的示意图;Figure 4 is a schematic diagram of different types of damping in another embodiment;

图5为又一个实施例中MEMS器件真空度测量方法的流程示意图;FIG. 5 is a schematic flow chart of a method for measuring the degree of vacuum of a MEMS device in yet another embodiment;

图6为一个实施例中拟合方程的示意图;Fig. 6 is a schematic diagram of a fitting equation in an embodiment;

图7为一个实施例中MEMS器件真空度测量装置的结构框图;Fig. 7 is a structural block diagram of a MEMS device vacuum degree measuring device in an embodiment;

图8为一个实施例中计算机设备的内部结构图。Figure 8 is a diagram of the internal structure of a computer device in one embodiment.

具体实施方式Detailed ways

为了使本申请的目的、技术方案及优点更加清楚明白,以下结合附图及实施例,对本申请进行进一步详细说明。应当理解,此处描述的具体实施例仅仅用以解释本申请,并不用于限定本申请。In order to make the purpose, technical solution and advantages of the present application clearer, the present application will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present application, and are not intended to limit the present application.

典型MEMS器件包括微陀螺仪、微加速度计、振荡器等,该类器件的核心是传感可动结构。它们一般采用电学激励的方式,让器件的可动结构保持在谐振状态,通过信号处理电路检测谐振子此时的品质因数、谐振频率等参数计算出外界加速度、角加速度等敏感信息。Typical MEMS devices include micro-gyroscopes, micro-accelerometers, oscillators, etc. The core of such devices is the sensing movable structure. They generally use electrical excitation to keep the movable structure of the device in a resonant state. The signal processing circuit detects parameters such as the quality factor and resonant frequency of the resonant oscillator at this time to calculate sensitive information such as external acceleration and angular acceleration.

通常,采用真空封装技术以提高MEMS器件性能。MEMS器件的品质因数是描述其内部微机械结构振动特性的关键参数,它关乎MEMS器件的分辨率和灵敏度等性能的好坏。真空封装MEMS器件的品质因数越大,其振动幅值和振动频率的稳定性越高。如MEMS器件处于谐振状态时,对环境中的真空度要求较高。高真空环境可以降低谐振式MEMS器件运动过程中的空气阻尼,极大地减少工作时的能耗,也可以提升MEMS器件的品质因数,从而改善其整体性能。因此,MEMS器件的敏感结构通常会采用真空封装技术,以保证MEMS器件密封腔体内的高真空度。Generally, vacuum packaging technology is used to improve the performance of MEMS devices. The quality factor of a MEMS device is a key parameter to describe the vibration characteristics of its internal micromechanical structure, and it is related to the performance of the MEMS device such as resolution and sensitivity. The higher the quality factor of the vacuum-packaged MEMS device, the higher the stability of its vibration amplitude and vibration frequency. For example, when the MEMS device is in a resonant state, the requirement for the vacuum degree in the environment is relatively high. The high vacuum environment can reduce the air damping during the movement of the resonant MEMS device, greatly reduce the energy consumption during work, and can also improve the quality factor of the MEMS device, thereby improving its overall performance. Therefore, the sensitive structure of the MEMS device usually adopts vacuum packaging technology to ensure the high vacuum degree in the sealed cavity of the MEMS device.

然而,目前的真空封装技术存在限制,会出现封装材料释气和气密性泄露的问题,导致真空封装MEMS器件密封腔内的真空度降低。此外,MEMS器件的体积很小,传统的真空规等测量真空度的装置没法测量MEMS器件密封腔内的真空度。However, the current vacuum packaging technology has limitations, and there will be problems of outgassing of packaging materials and airtight leakage, resulting in a decrease in the vacuum degree in the sealed cavity of vacuum-packaged MEMS devices. In addition, the volume of the MEMS device is very small, and conventional vacuum gauges and other devices for measuring the vacuum degree cannot measure the vacuum degree in the sealed cavity of the MEMS device.

为了测量MEMS器件密封腔体内的真空度,目前的方法有较大的局限性,通常采用间接测量法。现在常用的间接测量法有两种,一种是采用晶振作为传感器对腔体内部进行测量。利用晶振对腔内真空度测量方法,是基于晶振的谐振阻抗随气压变化而变化的原理,通过测量密封腔内晶振的谐振阻抗计算出腔内的真空度。这种方法需要将晶振与MEMS芯片一起封装进密封腔,会额外增加MEMS器件体积,此外还需要设计晶振阻抗测量电路,增加系统的复杂性。In order to measure the degree of vacuum in the sealed cavity of MEMS devices, the current methods have relatively large limitations, and indirect measurement methods are usually used. There are two commonly used indirect measurement methods now, one is to use a crystal oscillator as a sensor to measure the inside of the cavity. The method of using the crystal oscillator to measure the vacuum degree in the cavity is based on the principle that the resonant impedance of the crystal oscillator changes with the change of air pressure, and the vacuum degree in the cavity is calculated by measuring the resonant impedance of the crystal oscillator in the sealed cavity. This method needs to package the crystal oscillator and the MEMS chip together into a sealed cavity, which will increase the volume of the MEMS device. In addition, it is necessary to design a crystal oscillator impedance measurement circuit, which increases the complexity of the system.

另一种是皮拉尼计对MEMS器件腔体内部的真空度进行测量。皮拉尼计的测量原理是低温的气体分子碰撞高温固体时,会从固体夺取能量。通过计算被低温气体分子夺取的热量可以计算出腔内的真空度。这种方法也需要将皮拉尼计的电阻丝一起封装进密封腔,挤占密封腔内狭窄的空间。此外,这种方法一般适用于中低真空领域,对于有较高真空度要求的MEMS器件适用性不好。The other is the Pirani gauge to measure the vacuum inside the cavity of the MEMS device. The measurement principle of the Pirani meter is that when a low-temperature gas molecule collides with a high-temperature solid, it will steal energy from the solid. The vacuum in the cavity can be calculated by calculating the heat captured by the low-temperature gas molecules. This method also needs to package the resistance wires of the Pirani gauge into the sealed cavity together, occupying the narrow space in the sealed cavity. In addition, this method is generally suitable for medium and low vacuum fields, and is not suitable for MEMS devices with higher vacuum requirements.

因此,研究一种用于真空封装MEMS器件密封腔内真空度的测量方法显得尤为重要。本申请基于真空封装MEMS器件,目前的MEMS器件普遍要求真空封装,但传统的真空封装技术并不能保证密封腔内长时间内的真空度要求。目前的真空度测量方法普遍是将真空测量元件一起封装进密封腔,这会增大MEMS器件的尺寸。因此,对谐振式MEMS器件提出一种基于品质因数的密封腔内真空度测量方法,有助于MEMS器件设计人员改善真空封装MEMS器件的封装工艺、研究MEMS性能与真空度的内在联系,进而提升MEMS器件的性能。Therefore, it is particularly important to study a method for measuring the vacuum degree in the sealed cavity of vacuum-packaged MEMS devices. This application is based on the vacuum packaging of MEMS devices. The current MEMS devices generally require vacuum packaging, but the traditional vacuum packaging technology cannot guarantee the vacuum degree in the sealed cavity for a long time. The current vacuum measurement method is generally to package the vacuum measurement elements together into a sealed cavity, which will increase the size of the MEMS device. Therefore, a quality factor-based vacuum measurement method for resonant MEMS devices in a sealed cavity will help MEMS device designers improve the packaging process of vacuum-packaged MEMS devices, study the internal relationship between MEMS performance and vacuum, and then improve Performance of MEMS devices.

本申请实施例提供的MEMS器件真空度测量方法,可以应用于如图1所示的应用环境中。其中,终端102通过网络与MEMS器件测试系统104进行通信。数据存储系统可以集成在服务器104上,也可以放在云上或其他网络服务器上。MEMS器件测试系统104在真空封装条件下测量MEMS器件的品质因数,在不同气压条件下测量MEMS器件的品质因数,将品质因数以及不同气压条件下的品质因数发送至终端102,终端102获取MEMS器件在真空封装条件下的品质因数;获取MEMS器件在不同气压条件下的品质因数;根据不同气压条件下的品质因数进行拟合,得到拟合方程;基于拟合方程以及真空封装条件下的品质因数进行计算,得到MEMS器件的腔内真空度。其中,终端102可以但不限于是各种个人计算机、笔记本电脑、智能手机、平板电脑、物联网设备和便携式可穿戴设备,物联网设备可为智能音箱、智能电视、智能空调、智能车载设备等。便携式可穿戴设备可为智能手表、智能手环、头戴设备等。The method for measuring the vacuum degree of a MEMS device provided in the embodiment of the present application can be applied to the application environment shown in FIG. 1 . Wherein, the terminal 102 communicates with the MEMS device testing system 104 through the network. The data storage system can be integrated on the server 104, or placed on the cloud or other network servers. The MEMS device testing system 104 measures the quality factor of the MEMS device under vacuum packaging conditions, measures the quality factor of the MEMS device under different air pressure conditions, and sends the quality factor and the quality factor under different air pressure conditions to the terminal 102, and the terminal 102 obtains the MEMS device Quality factor under vacuum packaging conditions; obtain the quality factor of MEMS devices under different air pressure conditions; perform fitting according to the quality factors under different air pressure conditions to obtain a fitting equation; based on the fitting equation and the quality factor under vacuum packaging conditions Perform calculation to obtain the vacuum degree in the cavity of the MEMS device. Among them, the terminal 102 can be, but not limited to, various personal computers, notebook computers, smart phones, tablet computers, Internet of Things devices and portable wearable devices, and the Internet of Things devices can be smart speakers, smart TVs, smart air conditioners, smart vehicle-mounted devices, etc. . Portable wearable devices can be smart watches, smart bracelets, head-mounted devices, and the like.

在一个实施例中,如图2所示,提供了一种MEMS器件真空度测量方法,以该方法应用于图1中的终端102为例进行说明,包括以下步骤:In one embodiment, as shown in FIG. 2 , a method for measuring the vacuum degree of a MEMS device is provided, and the application of the method to the terminal 102 in FIG. 1 is used as an example for illustration, including the following steps:

步骤200,获取MEMS器件在真空封装条件下的品质因数。Step 200, acquiring the quality factor of the MEMS device under vacuum packaging conditions.

具体地,由于MEMS器件的品质因数与腔内真空度之间存在直接关联,因此基于品质因数对MEMS器件进行真空度测量。将MEMS器件在真空环境下进行气密封装,然后MEMS器件测试系统测量真空封装MEMS器件封装完好时的品质因数,得到品质因数Q0,并将品质因数发送至终端。终端获取MEMS器件在真空封装条件下的品质因数。Specifically, since there is a direct correlation between the quality factor of the MEMS device and the vacuum degree in the cavity, the vacuum degree measurement is performed on the MEMS device based on the quality factor. The MEMS device is hermetically packaged in a vacuum environment, and then the MEMS device testing system measures the quality factor of the vacuum-packaged MEMS device when it is intact, and obtains the quality factor Q 0 , and sends the quality factor to the terminal. The terminal obtains the quality factor of the MEMS device under vacuum packaging conditions.

步骤400,获取MEMS器件在不同气压条件下的品质因数。Step 400, obtaining the quality factor of the MEMS device under different air pressure conditions.

具体地,对MEMS器件的封装进行开盖处理,使其内部微机械结构与外部相通,此时MEMS器件为非气密封装,将开盖后的MEMS器件放置于气压可调的真空装置内,此时MEMS器件的真空度和真空装置的真空度是一致的。调节真空装置的真空腔内的气压P,然后由MEMS器件测试系统测量MEMS器件在不同气压Px条件下的品质因数QySpecifically, the package of the MEMS device is opened to make its internal micromechanical structure communicate with the outside. At this time, the MEMS device is in a non-hermetic package, and the MEMS device after the cover is opened is placed in a vacuum device with adjustable air pressure. At this time, the vacuum degree of the MEMS device is consistent with the vacuum degree of the vacuum device. Adjust the air pressure P in the vacuum chamber of the vacuum device, and then measure the quality factor Q y of the MEMS device under different air pressure P x conditions by the MEMS device testing system.

步骤600,根据不同气压条件下的品质因数进行拟合,得到拟合方程。Step 600, performing fitting according to the quality factors under different air pressure conditions to obtain a fitting equation.

具体地,将气压作为自变量,将品质因数的倒数作为因变量,根据不同气压条件下的品质因数进行线性拟合,得到表征气压与品质因数线性关系的拟合方程。Specifically, the air pressure is used as an independent variable, and the reciprocal of the quality factor is used as a dependent variable. Linear fitting is performed according to the quality factors under different air pressure conditions, and a fitting equation representing the linear relationship between air pressure and quality factor is obtained.

步骤800,基于拟合方程以及真空封装条件下的品质因数进行计算,得到MEMS器件的腔内真空度。Step 800, calculate based on the fitting equation and the quality factor under the condition of vacuum packaging, to obtain the vacuum degree in the cavity of the MEMS device.

具体地,将真空封装条件下的品质因数输入表征气压与品质因数线性关系的拟合方程中进行计算,得到MEMS器件的腔内真空度。Specifically, the quality factor under vacuum packaging conditions is input into the fitting equation representing the linear relationship between air pressure and quality factor for calculation, and the vacuum degree in the cavity of the MEMS device is obtained.

上述MEMS器件真空度测量方法中,获取MEMS器件在真空封装条件下的品质因数;获取MEMS器件在不同气压条件下的品质因数;根据不同气压条件下的品质因数进行拟合,得到拟合方程;基于拟合方程以及真空封装条件下的品质因数进行计算,得到MEMS器件的腔内真空度。整个方案通过测量MEMS器件在不同气压条件下的品质因数,根据不同气压条件下的品质因数进行拟合,得到拟合方程,拟合方程可以准确描述气压与品质因数之间的相关关系,进而根据拟合方程以及真空封装条件下的品质因数进行计算,可以快速且准确地得到MEMS器件的腔内真空度。In the method for measuring the degree of vacuum of the above-mentioned MEMS device, the quality factor of the MEMS device under vacuum packaging conditions is obtained; the quality factor of the MEMS device under different air pressure conditions is obtained; the fitting equation is obtained according to the quality factor under different air pressure conditions; Based on the fitting equation and the quality factor under vacuum packaging conditions, the cavity vacuum degree of the MEMS device is obtained. The whole scheme measures the quality factor of the MEMS device under different air pressure conditions, and performs fitting according to the quality factor under different air pressure conditions to obtain a fitting equation. The fitting equation can accurately describe the correlation between air pressure and quality factor, and then according to The fitting equation and the quality factor under vacuum packaging conditions can be calculated to quickly and accurately obtain the vacuum degree in the cavity of the MEMS device.

在一个可选的实施例中,如图3所示,根据不同气压条件下的品质因数进行拟合,得到拟合方程包括:In an optional embodiment, as shown in Figure 3, fitting is carried out according to the quality factor under different air pressure conditions, and the fitting equation obtained includes:

步骤620,获取品质因数与气压之间的相关关系。Step 620, obtaining the correlation between the quality factor and air pressure.

其中,相关关系包括正相关关系以及负相关关系。基于理论研究分析,品质因数与气压之间的相关关系为负相关关系,即品质因数与腔内气压成反比。Wherein, the correlation includes a positive correlation and a negative correlation. Based on theoretical research and analysis, the correlation between the quality factor and air pressure is a negative correlation, that is, the quality factor is inversely proportional to the air pressure in the chamber.

终端从本地获取品质因数与气压之间的相关关系。The terminal acquires the correlation between the quality factor and the air pressure locally.

步骤640,基于最小二乘法以及品质因数与气压之间的相关关系,对不同气压条件下的品质因数进行线性拟合,得到拟合方程。Step 640, based on the least square method and the correlation between the quality factor and the air pressure, perform linear fitting on the quality factor under different air pressure conditions to obtain a fitting equation.

具体地,将气压作为自变量,将品质因数的倒数作为因变量,基于最小二乘法,对不同气压条件下的品质因数进行线性拟合,得到表征气压与品质因数线性关系的拟合方程。Specifically, using the air pressure as the independent variable and the reciprocal of the quality factor as the dependent variable, based on the least squares method, the quality factors under different air pressure conditions were linearly fitted, and a fitting equation representing the linear relationship between air pressure and quality factor was obtained.

在一个可选的实施例中,获取品质因数与气压之间的相关关系包括:获取不同类型阻尼的阻尼表达式;基于不同类型阻尼的阻尼表达式,确定不同类型阻尼影响下的品质因数表达式;根据理想气体状态方程以及不同类型阻尼影响下的品质因数表达式,确定品质因数与气压之间的相关关系。In an optional embodiment, obtaining the correlation between the quality factor and the air pressure includes: obtaining damping expressions of different types of damping; based on the damping expressions of different types of damping, determining the quality factor expressions under the influence of different types of damping ; According to the ideal gas state equation and the quality factor expression under the influence of different types of damping, determine the correlation between the quality factor and the air pressure.

具体地,本实施例针对谐振式MEMS器件的真空度测量,主要基于谐振式MEMS器件的品质因数、腔内气压与气体分子数之间的关系来进行真空度测量。Specifically, this embodiment is aimed at measuring the vacuum degree of the resonant MEMS device, and the vacuum degree measurement is mainly based on the relationship between the quality factor of the resonant MEMS device, the pressure in the cavity, and the number of gas molecules.

首先,获取不同类型阻尼的阻尼表达式;由于品质因数与阻尼相关,获取通用品质因数表达式,然后将不同类型阻尼的阻尼表达式带入至通用阻尼表达式,得到不同类型阻尼影响下的品质因数表达式;之后,获取理想气体状态方程以及空气粘度系数表达式,理想气体状态方程中包括气压参数,将理想气体状态方程以及空气粘度系数表达式代入不同类型阻尼影响下的品质因数表达式,得到不同类型阻尼影响下的品质因数与气压之间的相关关系。在不同类型阻尼影响下的品质因数与气压之间的相关关系均一致时,得到品质因数与气压之间的相关关系。First, obtain the damping expressions of different types of damping; since the quality factor is related to damping, obtain the general quality factor expression, and then bring the damping expressions of different types of damping into the general damping expression to obtain the quality under the influence of different types of damping Factor expression; after that, obtain the ideal gas state equation and the air viscosity coefficient expression, the ideal gas state equation includes the air pressure parameter, and substitute the ideal gas state equation and the air viscosity coefficient expression into the quality factor expression under the influence of different types of damping, The correlation between quality factor and air pressure under the influence of different types of damping is obtained. When the correlation between quality factor and air pressure under the influence of different types of damping is consistent, the correlation between quality factor and air pressure is obtained.

在一个可选的实施例中,获取不同类型阻尼的阻尼表达式包括:获取压膜阻尼表达式以及滑膜阻尼表达式;In an optional embodiment, obtaining damping expressions of different types of damping includes: obtaining a compression film damping expression and a synovial film damping expression;

基于不同类型阻尼的阻尼表达式,确定不同类型阻尼影响下的品质因数表达式包括:基于压膜阻尼表达式以及滑膜阻尼表达式,确定压膜阻尼影响下的第一品质因数表达式以及滑膜阻尼影响下的第二品质因数表达式;Based on the damping expressions of different types of damping, determining the expression of the quality factor under the influence of different types of damping includes: based on the expression of the compression film damping and the expression of the sliding film damping, determining the expression of the first quality factor under the influence of the compression film damping and the expression of the sliding film The second quality factor expression under the influence of membrane damping;

根据理想气体状态方程以及不同类型阻尼影响下的品质因数表达式,确定品质因数与气压之间的相关关系包括:根据理想气体状态方程以及第一品质因数表达式,确定第一品质因数与气压之间的相关关系;根据理想气体状态方程以及第二品质因数表达式,确定第二品质因数与气压之间的相关关系;在第一品质因数与气压之间的相关关系与第二品质因数与气压之间的相关关系相同的情况下,得到品质因数与气压之间的相关关系。According to the ideal gas state equation and the expression of the quality factor under the influence of different types of damping, determining the correlation between the quality factor and the air pressure includes: according to the ideal gas state equation and the first quality factor expression, determining the relationship between the first quality factor and the air pressure The correlation between; according to the ideal gas state equation and the second quality factor expression, determine the correlation between the second quality factor and the air pressure; the correlation between the first quality factor and the air pressure and the second quality factor and the air pressure In the case of the same correlation relationship, the correlation relationship between quality factor and air pressure is obtained.

其中,不同类型阻尼包括压膜阻尼和滑膜阻尼。Among them, different types of damping include compression film damping and synovial film damping.

具体地,首先介绍基于谐振式MEMS器件的品质因数、腔内气压与气体分子数之间的关系来进行真空度测量之间的数理模型。Specifically, the mathematical model for measuring the vacuum degree based on the relationship between the quality factor of the resonant MEMS device, the pressure in the cavity and the number of gas molecules is firstly introduced.

MEMS器件内部的微机械结构振动时会受到空气阻尼的影响,根据振动时的方向不同可分为压膜阻尼和滑膜阻尼,如图4所示。一般来说,结构的运动会同时产生压膜阻尼和滑膜阻尼,但对MEMS器件的谐振子而言,往往是其中一个阻尼占主导作用。为了说明品质因数与腔内气压的关系不会因阻尼类型的不同而改变,下面将对两种阻尼进行分析。The micromechanical structure inside the MEMS device will be affected by air damping when vibrating. According to the direction of vibration, it can be divided into compression film damping and synovial film damping, as shown in Figure 4. Generally speaking, the movement of the structure will produce both compression film damping and sliding film damping, but for the resonator of MEMS devices, one of the damping is often dominant. In order to illustrate that the relationship between the quality factor and the air pressure in the cavity will not change due to different damping types, the following two types of damping will be analyzed.

压膜阻尼和滑膜阻尼的计算公式(即压膜阻尼表达式以及滑膜阻尼表达式)如下所示:The calculation formulas of compression film damping and synovial film damping (that is, the expression of compression film damping and the expression of synovial film damping) are as follows:

其中,Csqueeze是压膜阻尼;μ是空气粘度系数;w是可动结构的宽度;l是可动结构的长度;α是可动结构的形状系数,它取决于w/l;d是可动结构和固定结构之间的间隙。Among them, C squeeze is the compression film damping; μ is the air viscosity coefficient; w is the width of the movable structure; l is the length of the movable structure; α is the shape coefficient of the movable structure, which depends on w/l; The gap between the moving structure and the fixed structure.

其中,Cslide是滑膜阻尼;A是可动结构与固定结构之间的交叠面积。Among them, C slide is the synovial film damping; A is the overlap area between the movable structure and the fixed structure.

空气粘度系数μ可以用以下公式表达:The air viscosity coefficient μ can be expressed by the following formula:

其中,ρ是空气密度,是平均速率,/>是平均自由程,kb是玻尔兹曼常数且kb=1.3806×10-23J/K;T是环境温度;N是腔内气体分子的摩尔数;/>是腔内气体分子的平均自由时间;V是腔内空间的体积;where ρ is the air density, is the average rate, /> is the mean free path, k b is the Boltzmann constant and k b =1.3806×10 -23 J/K; T is the ambient temperature; N is the number of moles of gas molecules in the cavity;/> is the mean free time of gas molecules in the cavity; V is the volume of the space in the cavity;

在两种空气阻尼的影响下,谐振子的品质因数(第一品质因数表达式以及第二品质因数表达式)分别可以表达为:Under the influence of two kinds of air damping, the quality factor (the first quality factor expression and the second quality factor expression) of the harmonic oscillator can be expressed as:

其中,Qd、Qs分别是压膜阻尼和滑膜阻尼下的品质因数;m是可动质量块的质量,ωd、ωs分别是压膜阻尼和滑膜阻尼下的谐振频率;Among them, Q d , Q s are the quality factors under compression film damping and sliding film damping respectively; m is the mass of the movable mass, ω d , ω s are the resonant frequencies under compression film damping and sliding film damping respectively;

理想气体的状态方程如公式(7)所示:The equation of state of an ideal gas is shown in formula (7):

PV=NkbT(7)PV=Nk b T(7)

将公式(4)、公式(7)代入公式(5)、公式(6)可以得到品质因数与气压的关系(第一品质因数与气压之间的相关关系以及第二品质因数与气压之间的相关关系):Substituting formula (4) and formula (7) into formula (5) and formula (6) can get the relationship between quality factor and air pressure (the correlation between the first quality factor and air pressure and the correlation between the second quality factor and air pressure relationship):

因此,MEMS器件的品质指数、气体分子数以及腔内气压之间的关系如公式(10)所示,第一品质因数与气压之间的相关关系为负相关关系,第二品质因数与气压之间的相关关系为负相关关系,因此,品质因数与腔内气压成反比。Therefore, the relationship between the quality index of MEMS devices, the number of gas molecules, and the air pressure in the cavity is shown in formula (10). The correlation between the first quality factor and the air pressure is a negative correlation, and the relationship between the second quality factor and the air pressure The correlation between them is a negative correlation, therefore, the quality factor is inversely proportional to the air pressure in the cavity.

在一个可选的实施例中,获取MEMS器件在真空封装条件下的品质因数包括:基于扫频法,获取MEMS器件在真空封装条件下的品质因数。In an optional embodiment, obtaining the quality factor of the MEMS device under the vacuum packaging condition includes: acquiring the quality factor of the MEMS device under the vacuum packaging condition based on a frequency sweep method.

具体地,在测量MEMS器件在真空封装条件下的品质因数时,可以采用扫频法,将封装完好的MEMS器件与扫频电路板连接,给扫频电路板上电并对MEMS器件敏感结构进行电学扫频,根据频谱数据获得封装完好时的品质因数,得到品质因数。Specifically, when measuring the quality factor of MEMS devices under vacuum packaging conditions, the frequency sweep method can be used to connect the well-packaged MEMS devices to the frequency sweep circuit board, power the frequency sweep circuit board and conduct Electrical frequency sweep, according to the spectrum data to obtain the quality factor when the package is intact, to obtain the quality factor.

在一个可选的实施例中,获取MEMS器件在真空封装条件下的品质因数包括:基于震荡衰减法,获取MEMS器件在真空封装条件下的品质因数。In an optional embodiment, obtaining the quality factor of the MEMS device under the vacuum packaging condition includes: acquiring the quality factor of the MEMS device under the vacuum packaging condition based on an oscillation attenuation method.

具体地,MEMS器件测试系统基于震荡衰减法,测量MEMS器件在真空封装条件下的品质因数,并将品质因数发送至终端,终端获取MEMS器件测试系统测量的MEMS器件在真空封装条件下的品质因数。Specifically, the MEMS device testing system measures the quality factor of the MEMS device under vacuum packaging conditions based on the oscillation attenuation method, and sends the quality factor to the terminal, and the terminal obtains the quality factor of the MEMS device under vacuum packaging conditions measured by the MEMS device testing system .

在一个可选的实施例中,获取MEMS器件在不同气压条件下的品质因数包括:获取气压集合,基于气压集合,确定预设气压序列;将MEMS器件置于预设气压序列中每一气压环境下,获取MEMS器件在每一气压环境条件下的品质因数。In an optional embodiment, obtaining the quality factor of the MEMS device under different air pressure conditions includes: obtaining an air pressure set, based on the air pressure set, determining a preset air pressure sequence; placing the MEMS device in each air pressure environment in the preset air pressure sequence , the quality factor of the MEMS device under each air pressure environment condition is obtained.

其中,气压集合中存储多个大小不同的气压。Wherein, multiple air pressures with different sizes are stored in the air pressure set.

具体地,终端获取气压集合,对气压集合中的气压进行排序,得到预设气压序列,根据预设气压序列生成测量指令,将测量指令发送至MEMS器件测试系统,由MEMS器件测试系统根据测量指令得到预设气压序列。然后,根据预设气压序列,调节真空泵气压,以控制调节真空腔的气压达到预设气压序列中的每一气压,从而获取MEMS器件在每一气压环境条件下的品质因数。Specifically, the terminal acquires the air pressure set, sorts the air pressure in the air pressure set, obtains the preset air pressure sequence, generates measurement instructions according to the preset air pressure sequence, and sends the measurement instructions to the MEMS device testing system, and the MEMS device testing system according to the measurement instructions Get preset air pressure sequence. Then, adjust the air pressure of the vacuum pump according to the preset air pressure sequence, so as to control and adjust the air pressure of the vacuum chamber to reach each air pressure in the preset air pressure sequence, so as to obtain the quality factor of the MEMS device under each air pressure environment condition.

为了易于理解本申请实施例提供的技术方案,以完整的MEMS器件真空度测量过程对本申请实施例提供的MEMS器件真空度测量方法进行简要说明:In order to easily understand the technical solution provided by the embodiment of the present application, the method for measuring the vacuum degree of the MEMS device provided by the embodiment of the present application is briefly described with the complete vacuum measurement process of the MEMS device:

1、以真空封装MEMS器件为测试样品;1. Take the vacuum packaged MEMS device as the test sample;

2、通过扫频法或者震荡衰减法测量到谐振式MEMS器件封装完好时的品质因数Q02. Measure the quality factor Q 0 when the resonant MEMS device package is intact by frequency sweep method or oscillation attenuation method;

3、对MEMS器件的封装进行开盖处理,开盖后将MEMS器件放置于配有真空泵的真空装置内,该装置通过调节真空泵可以控制调节真空腔的气压,并有对外的电连接线对测试样品进行测量;3. Uncover the package of the MEMS device. After opening the cover, place the MEMS device in a vacuum device equipped with a vacuum pump. The device can control and adjust the air pressure of the vacuum chamber by adjusting the vacuum pump, and has external electrical connection wires for testing samples to be measured;

4、调节真空腔的气压P,再一次测量MEMS器件的品质因数,记录此时真空腔的气压P1和MEMS器件的品质因数Q14. Adjust the air pressure P of the vacuum chamber, measure the quality factor of the MEMS device again, and record the air pressure P 1 of the vacuum chamber and the quality factor Q 1 of the MEMS device at this time;

5、再调节真空腔的气压P,测量MEMS器件的品质因数,得到一系列P对应的MEMS器件品质因数Q;5. Then adjust the air pressure P of the vacuum chamber, measure the quality factor of the MEMS device, and obtain a series of quality factors Q of the MEMS device corresponding to P;

6、以X=P为横坐标,Y=1/Q为纵坐标,进行线性拟合,得到线性拟合方程;6. With X=P as the abscissa and Y=1/Q as the ordinate, perform linear fitting to obtain a linear fitting equation;

7、根据拟合方程以及封装完好时的品质因数Q0,求得谐振式MEMS器件封装完好时的腔内真空度。7. According to the fitting equation and the quality factor Q 0 when the packaging is intact, the vacuum degree in the cavity when the resonant MEMS device is packaged is obtained.

在一个应用实施例中,以MEMS器件为陀螺仪为例进行测量,具体实现过程如下:In an application embodiment, taking the MEMS device as a gyroscope as an example for measurement, the specific implementation process is as follows:

1、待测样品为真空封装的MEMS陀螺仪;1. The sample to be tested is a vacuum-packaged MEMS gyroscope;

2、将封装完好的MEMS陀螺仪与扫频电路板连接,给扫频电路板上电并对MEMS陀螺仪敏感结构进行电学扫频,根据频谱数据获得封装完好时的品质因数Q0=16719;2. Connect the well-packaged MEMS gyroscope to the frequency-sweeping circuit board, power up the frequency-sweeping circuit board and perform electrical frequency-sweeping on the sensitive structure of the MEMS gyroscope, and obtain the quality factor Q 0 =16719 when the package is intact according to the spectrum data;

3、对MEMS陀螺仪的封装进行开盖处理,露出其敏感结构;3. Open the package of the MEMS gyroscope to expose its sensitive structure;

4、将开盖后的MEMS器件放置于真空装置内,该真空装置与一个真空泵相连,便于调节真空腔的气压,且该真空装置与外界有电学连接接口;4. Place the MEMS device after opening the cover in the vacuum device, which is connected with a vacuum pump to facilitate the adjustment of the air pressure in the vacuum chamber, and the vacuum device has an electrical connection interface with the outside world;

5、调节真空装置的气压P,使其为1000Pa,通过上述电学接口,利用扫频电路板测量开盖后MEMS器件陀螺仪敏感结构此时的品质因数,并记录为Q15. Adjust the air pressure P of the vacuum device to make it 1000Pa. Through the above electrical interface, use the frequency sweep circuit board to measure the quality factor of the sensitive structure of the MEMS device gyroscope at this time after opening the cover, and record it as Q 1 ;

6、再次调节Q,使其依次为800Pa、600Pa、400Pa、200Pa、100Pa、10Pa,分别测量不同气压下的品质因数,并分别记录为Q2、Q3、Q4、Q5、Q6、Q76. Adjust Q again so that it is 800Pa, 600Pa, 400Pa, 200Pa, 100Pa, 10Pa in turn, measure the quality factors under different air pressures, and record them as Q 2 , Q 3 , Q 4 , Q 5 , Q 6 , Q7 ;

7、根据步骤6中的数据,计算X=P,Y=1/Q,记录与表中,见表1。7. According to the data in step 6, calculate X=P, Y=1/Q, record and table, see Table 1.

表1不同气压下的品质因数Table 1 Quality factor under different air pressure

8、以X为横坐标,Y为纵坐标,利用最小二乘法进行线性拟合,如图6所示,可以看到两者的线性相关度为0.9925,存在线性关系;8. With X as the abscissa and Y as the ordinate, use the least squares method for linear fitting, as shown in Figure 6, it can be seen that the linear correlation between the two is 0.9925, and there is a linear relationship;

9、线性拟合得到线性拟合方程Y=1.9143×10–5+7.4142×10–7×X,可以计算出该MEMS陀螺仪封装完好时密封腔内的真空度为54Pa。9. Linear fitting The linear fitting equation Y=1.9143×10 –5 +7.4142×10 –7 ×X can be obtained, and it can be calculated that the vacuum degree in the sealed cavity is 54Pa when the MEMS gyroscope is well packaged.

本申请解决了目前方法中需要将真空测量元件一起封装进密封腔内,进而挤占密封腔狭窄空间的问题。由于本申请提供的MEMS器件真空度测量方法是利用线性拟合计算真空封装MEMS器件封装腔内气压,因此可以可靠地获得真空封装MEMS器件封装腔内真空度。本申请提供的MEMS器件真空度测量方法还可以用于测量同一批次的MEMS器件腔内真空度的分布,验证真空封装工艺的质量一致性。此外,该方法有助于帮助封装工艺人员调节封装气压及评估真空封装工艺水平。因此,该方法有助于研制出质量一致性好、可靠性高的真空封装MEMS器件。The present application solves the problem that in the current method, the vacuum measuring elements need to be packaged together into the sealed cavity, thereby occupying the narrow space of the sealed cavity. Since the method for measuring the vacuum degree of the MEMS device provided in the present application uses linear fitting to calculate the air pressure in the packaging cavity of the vacuum-packaged MEMS device, the vacuum degree in the packaging cavity of the vacuum-packaged MEMS device can be reliably obtained. The MEMS device vacuum measurement method provided in the present application can also be used to measure the distribution of the vacuum degree in the cavity of the same batch of MEMS devices, and verify the quality consistency of the vacuum packaging process. In addition, the method is helpful to help packaging technicians adjust the packaging air pressure and evaluate the vacuum packaging process level. Therefore, the method is helpful to develop vacuum-packaged MEMS devices with good quality consistency and high reliability.

应该理解的是,虽然如上的各实施例所涉及的流程图中的各个步骤按照箭头的指示依次显示,但是这些步骤并不是必然按照箭头指示的顺序依次执行。除非本文中有明确的说明,这些步骤的执行并没有严格的顺序限制,这些步骤可以以其它的顺序执行。而且,如上的各实施例所涉及的流程图中的至少一部分步骤可以包括多个步骤或者多个阶段,这些步骤或者阶段并不必然是在同一时刻执行完成,而是可以在不同的时刻执行,这些步骤或者阶段的执行顺序也不必然是依次进行,而是可以与其它步骤或者其它步骤中的步骤或者阶段的至少一部分轮流或者交替地执行。It should be understood that although the steps in the flow charts involved in the above embodiments are shown sequentially according to the arrows, these steps are not necessarily executed sequentially in the order indicated by the arrows. Unless otherwise specified herein, there is no strict order restriction on the execution of these steps, and these steps can be executed in other orders. Moreover, at least some of the steps in the flow charts involved in the above embodiments may include multiple steps or stages, and these steps or stages are not necessarily executed at the same time, but may be executed at different times, The execution order of these steps or stages is not necessarily performed sequentially, but may be executed in turn or alternately with other steps or at least a part of steps or stages in other steps.

基于同样的发明构思,本申请实施例还提供了一种用于实现上述所涉及的MEMS器件真空度测量方法的MEMS器件真空度测量装置。该装置所提供的解决问题的实现方案与上述方法中所记载的实现方案相似,故下面所提供的一个或多个MEMS器件真空度测量装置实施例中的具体限定可以参见上文中对于MEMS器件真空度测量方法的限定,在此不再赘述。Based on the same inventive concept, an embodiment of the present application also provides a MEMS device vacuum degree measuring device for implementing the above-mentioned method for measuring the vacuum degree of a MEMS device. The solution to the problem provided by the device is similar to the implementation described in the above method, so the specific limitations in one or more embodiments of the MEMS device vacuum measurement device provided below can be referred to above for the MEMS device vacuum The limitation of the degree measurement method will not be repeated here.

在一个实施例中,如图7所示,提供了一种MEMS器件真空度测量装置,包括:第一获取模块702、第二获取模块704、拟合模块706和计算模块708,其中:In one embodiment, as shown in Figure 7, a MEMS device vacuum measurement device is provided, including: a first acquisition module 702, a second acquisition module 704, a fitting module 706 and a calculation module 708, wherein:

第一获取模块702,用于获取MEMS器件在真空封装条件下的品质因数;The first obtaining module 702 is used to obtain the quality factor of the MEMS device under vacuum packaging conditions;

第二获取模块704,用于获取MEMS器件在不同气压条件下的品质因数;The second obtaining module 704 is used to obtain the quality factor of the MEMS device under different air pressure conditions;

拟合模块706,用于根据不同气压条件下的品质因数进行拟合,得到拟合方程;Fitting module 706, is used for fitting according to the quality factor under different air pressure conditions, obtains fitting equation;

计算模块708,用于基于拟合方程以及真空封装条件下的品质因数进行计算,得到MEMS器件的腔内真空度。The calculation module 708 is configured to perform calculation based on the fitting equation and the quality factor under vacuum packaging conditions to obtain the vacuum degree in the cavity of the MEMS device.

在其中一个实施例中,拟合模块706还用于获取品质因数与气压之间的相关关系,相关关系包括正相关关系以及负相关关系;基于最小二乘法以及品质因数与气压之间的相关关系,对不同气压条件下的品质因数进行线性拟合,得到拟合方程。In one of the embodiments, the fitting module 706 is also used to obtain the correlation between the quality factor and the air pressure, and the correlation includes a positive correlation and a negative correlation; based on the least square method and the correlation between the quality factor and the air pressure , and perform linear fitting on the quality factor under different air pressure conditions to obtain the fitting equation.

在其中一个实施例中,拟合模块706还用于获取不同类型阻尼的阻尼表达式;基于不同类型阻尼的阻尼表达式,确定不同类型阻尼影响下的品质因数表达式;根据理想气体状态方程以及不同类型阻尼影响下的品质因数表达式,确定品质因数与气压之间的相关关系。In one of the embodiments, the fitting module 706 is also used to obtain damping expressions of different types of damping; based on the damping expressions of different types of damping, determine the quality factor expression under the influence of different types of damping; according to the ideal gas state equation and Expressions for the quality factor under the influence of different types of damping to determine the correlation between the quality factor and air pressure.

在其中一个实施例中,拟合模块706还用于获取压膜阻尼表达式以及滑膜阻尼表达式;基于压膜阻尼表达式以及滑膜阻尼表达式,确定压膜阻尼影响下的第一品质因数表达式以及滑膜阻尼影响下的第二品质因数表达式;根据理想气体状态方程以及第一品质因数表达式,确定第一品质因数与气压之间的相关关系;根据理想气体状态方程以及第二品质因数表达式,确定第二品质因数与气压之间的相关关系;在第一品质因数与气压之间的相关关系与第二品质因数与气压之间的相关关系相同的情况下,得到品质因数与气压之间的相关关系。In one of the embodiments, the fitting module 706 is also used to obtain the compression film damping expression and the synovial film damping expression; based on the compression film damping expression and the synovial film damping expression, determine the first quality under the influence of the compression film damping The factor expression and the second quality factor expression under the influence of synovial damping; according to the ideal gas state equation and the first quality factor expression, determine the correlation between the first quality factor and the air pressure; according to the ideal gas state equation and the first quality factor expression The second quality factor expression determines the correlation between the second quality factor and the air pressure; when the correlation between the first quality factor and the air pressure is the same as the correlation between the second quality factor and the air pressure, the quality Correlation between factor and air pressure.

在其中一个实施例中,第一获取模块702还用于基于扫频法,获取MEMS器件在真空封装条件下的品质因数。In one of the embodiments, the first obtaining module 702 is also used to obtain the quality factor of the MEMS device under the condition of vacuum packaging based on the frequency sweep method.

在其中一个实施例中,第一获取模块702还用于基于震荡衰减法,获取MEMS器件在真空封装条件下的品质因数。In one of the embodiments, the first obtaining module 702 is also used to obtain the quality factor of the MEMS device under the condition of vacuum packaging based on the oscillation attenuation method.

在其中一个实施例中,第二获取模块704还用于获取气压集合,基于气压集合,确定预设气压序列;将MEMS器件置于预设气压序列中每一气压环境下,获取MEMS器件在每一气压环境条件下的品质因数。In one of the embodiments, the second obtaining module 704 is also used to obtain the air pressure set, and determine the preset air pressure sequence based on the air pressure set; place the MEMS device in each air pressure environment in the preset air pressure sequence, and obtain the MEMS device in each air pressure environment. The figure of merit at atmospheric pressure.

上述MEMS器件真空度测量装置中的各个模块可全部或部分通过软件、硬件及其组合来实现。上述各模块可以硬件形式内嵌于或独立于计算机设备中的处理器中,也可以以软件形式存储于计算机设备中的存储器中,以便于处理器调用执行以上各个模块对应的操作。Each module in the above-mentioned MEMS device vacuum degree measuring device can be fully or partially realized by software, hardware and a combination thereof. The above-mentioned modules can be embedded in or independent of the processor in the computer device in the form of hardware, and can also be stored in the memory of the computer device in the form of software, so that the processor can invoke and execute the corresponding operations of the above-mentioned modules.

在一个实施例中,提供了一种计算机设备,该计算机设备可以是终端,其内部结构图可以如图8所示。该计算机设备包括通过系统总线连接的处理器、存储器、通信接口、显示屏和输入装置。其中,该计算机设备的处理器用于提供计算和控制能力。该计算机设备的存储器包括非易失性存储介质、内存储器。该非易失性存储介质存储有操作系统和计算机程序。该内存储器为非易失性存储介质中的操作系统和计算机程序的运行提供环境。该计算机设备的通信接口用于与外部的终端进行有线或无线方式的通信,无线方式可通过WIFI、移动蜂窝网络、NFC(近场通信)或其他技术实现。该计算机程序被处理器执行时以实现一种MEMS器件真空度测量方法。该计算机设备的显示屏可以是液晶显示屏或者电子墨水显示屏,该计算机设备的输入装置可以是显示屏上覆盖的触摸层,也可以是计算机设备外壳上设置的按键、轨迹球或触控板,还可以是外接的键盘、触控板或鼠标等。In one embodiment, a computer device is provided. The computer device may be a terminal, and its internal structure may be as shown in FIG. 8 . The computer device includes a processor, a memory, a communication interface, a display screen and an input device connected through a system bus. Wherein, the processor of the computer device is used to provide calculation and control capabilities. The memory of the computer device includes a non-volatile storage medium and an internal memory. The non-volatile storage medium stores an operating system and computer programs. The internal memory provides an environment for the operation of the operating system and computer programs in the non-volatile storage medium. The communication interface of the computer device is used to communicate with an external terminal in a wired or wireless manner, and the wireless manner can be realized through WIFI, mobile cellular network, NFC (near field communication) or other technologies. When the computer program is executed by the processor, a method for measuring the vacuum degree of the MEMS device is realized. The display screen of the computer device may be a liquid crystal display screen or an electronic ink display screen, and the input device of the computer device may be a touch layer covered on the display screen, or a button, a trackball or a touch pad provided on the casing of the computer device , and can also be an external keyboard, touchpad or mouse.

本领域技术人员可以理解,图8中示出的结构,仅仅是与本申请方案相关的部分结构的框图,并不构成对本申请方案所应用于其上的计算机设备的限定,具体的计算机设备可以包括比图中所示更多或更少的部件,或者组合某些部件,或者具有不同的部件布置。Those skilled in the art can understand that the structure shown in FIG. 8 is only a block diagram of a partial structure related to the solution of this application, and does not constitute a limitation on the computer equipment to which the solution of this application is applied. The specific computer equipment can be More or fewer components than shown in the figures may be included, or some components may be combined, or have a different arrangement of components.

在一个实施例中,提供了一种计算机设备,包括存储器和处理器,存储器中存储有计算机程序,该处理器执行计算机程序时实现以下步骤:In one embodiment, a computer device is provided, including a memory and a processor, a computer program is stored in the memory, and the processor implements the following steps when executing the computer program:

获取MEMS器件在真空封装条件下的品质因数;Obtain the quality factor of MEMS devices under vacuum packaging conditions;

获取MEMS器件在不同气压条件下的品质因数;Obtain the quality factor of MEMS devices under different air pressure conditions;

根据不同气压条件下的品质因数进行拟合,得到拟合方程;Fitting is carried out according to the quality factors under different air pressure conditions, and the fitting equation is obtained;

基于拟合方程以及真空封装条件下的品质因数进行计算,得到MEMS器件的腔内真空度。Based on the fitting equation and the quality factor under vacuum packaging conditions, the cavity vacuum degree of the MEMS device is obtained.

在一个实施例中,处理器执行计算机程序时还实现以下步骤:根据不同气压条件下的品质因数进行拟合,得到拟合方程包括:获取品质因数与气压之间的相关关系,相关关系包括正相关关系以及负相关关系;基于最小二乘法以及品质因数与气压之间的相关关系,对不同气压条件下的品质因数进行线性拟合,得到拟合方程。In one embodiment, when the processor executes the computer program, the following steps are also implemented: performing fitting according to the quality factor under different air pressure conditions, and obtaining the fitting equation includes: obtaining the correlation between the quality factor and the air pressure, and the correlation includes a positive Correlation and negative correlation; based on the least square method and the correlation between quality factor and air pressure, the quality factor under different air pressure conditions is linearly fitted to obtain the fitting equation.

在一个实施例中,处理器执行计算机程序时还实现以下步骤:获取不同类型阻尼的阻尼表达式;基于不同类型阻尼的阻尼表达式,确定不同类型阻尼影响下的品质因数表达式;根据理想气体状态方程以及不同类型阻尼影响下的品质因数表达式,确定品质因数与气压之间的相关关系。In one embodiment, when the processor executes the computer program, the following steps are also implemented: obtaining damping expressions of different types of damping; determining the quality factor expressions under the influence of different types of damping based on the damping expressions of different types of damping; The equation of state and the expression of the quality factor under the influence of different types of damping determine the correlation between the quality factor and the air pressure.

在一个实施例中,处理器执行计算机程序时还实现以下步骤:获取压膜阻尼表达式以及滑膜阻尼表达式;基于压膜阻尼表达式以及滑膜阻尼表达式,确定压膜阻尼影响下的第一品质因数表达式以及滑膜阻尼影响下的第二品质因数表达式;根据理想气体状态方程以及第一品质因数表达式,确定第一品质因数与气压之间的相关关系;根据理想气体状态方程以及第二品质因数表达式,确定第二品质因数与气压之间的相关关系;在第一品质因数与气压之间的相关关系与第二品质因数与气压之间的相关关系相同的情况下,得到品质因数与气压之间的相关关系。In one embodiment, when the processor executes the computer program, the following steps are also implemented: obtaining the compression film damping expression and the synovial film damping expression; based on the compression film damping expression and the synovial film damping expression, determining the The first quality factor expression and the second quality factor expression under the influence of synovial film damping; according to the ideal gas state equation and the first quality factor expression, determine the correlation between the first quality factor and the air pressure; according to the ideal gas state equation and a second figure of merit expression to determine the correlation between the second figure of merit and air pressure; where the correlation between the first figure of merit and air pressure is the same as the correlation between the second figure of merit and air pressure , to get the correlation between quality factor and air pressure.

在一个实施例中,处理器执行计算机程序时还实现以下步骤:基于扫频法,获取MEMS器件在真空封装条件下的品质因数。In one embodiment, when the processor executes the computer program, the following steps are further implemented: based on the frequency sweep method, the quality factor of the MEMS device under the condition of vacuum packaging is obtained.

在一个实施例中,处理器执行计算机程序时还实现以下步骤:基于震荡衰减法,获取MEMS器件在真空封装条件下的品质因数。In one embodiment, when the processor executes the computer program, the following steps are further implemented: based on the oscillation attenuation method, the quality factor of the MEMS device under the condition of vacuum packaging is obtained.

在一个实施例中,处理器执行计算机程序时还实现以下步骤:获取气压集合,基于气压集合,确定预设气压序列;将MEMS器件置于预设气压序列中每一气压环境下,获取MEMS器件在每一气压环境条件下的品质因数。In one embodiment, when the processor executes the computer program, the following steps are also implemented: obtaining the set of air pressure, determining the preset air pressure sequence based on the set of air pressure; placing the MEMS device under each air pressure environment in the preset air pressure sequence, and obtaining the MEMS device The figure of merit at each atmospheric pressure ambient condition.

在一个实施例中,提供了一种计算机可读存储介质,其上存储有计算机程序,计算机程序被处理器执行时实现以下步骤:In one embodiment, a computer-readable storage medium is provided, on which a computer program is stored, and when the computer program is executed by a processor, the following steps are implemented:

获取MEMS器件在真空封装条件下的品质因数;Obtain the quality factor of MEMS devices under vacuum packaging conditions;

获取MEMS器件在不同气压条件下的品质因数;Obtain the quality factor of MEMS devices under different air pressure conditions;

根据不同气压条件下的品质因数进行拟合,得到拟合方程;Fitting is carried out according to the quality factors under different air pressure conditions, and the fitting equation is obtained;

基于拟合方程以及真空封装条件下的品质因数进行计算,得到MEMS器件的腔内真空度。Based on the fitting equation and the quality factor under vacuum packaging conditions, the cavity vacuum degree of the MEMS device is obtained.

在一个实施例中,计算机程序被处理器执行时还实现以下步骤:根据不同气压条件下的品质因数进行拟合,得到拟合方程包括:获取品质因数与气压之间的相关关系,相关关系包括正相关关系以及负相关关系;基于最小二乘法以及品质因数与气压之间的相关关系,对不同气压条件下的品质因数进行线性拟合,得到拟合方程。In one embodiment, when the computer program is executed by the processor, the following steps are also implemented: performing fitting according to the quality factors under different air pressure conditions, and obtaining the fitting equation includes: obtaining the correlation between the quality factor and the air pressure, and the correlation includes Positive correlation and negative correlation; based on the least square method and the correlation between quality factor and air pressure, the quality factor under different air pressure conditions is linearly fitted to obtain the fitting equation.

在一个实施例中,计算机程序被处理器执行时还实现以下步骤:获取不同类型阻尼的阻尼表达式;基于不同类型阻尼的阻尼表达式,确定不同类型阻尼影响下的品质因数表达式;根据理想气体状态方程以及不同类型阻尼影响下的品质因数表达式,确定品质因数与气压之间的相关关系。In one embodiment, when the computer program is executed by the processor, the following steps are also implemented: obtaining damping expressions of different types of damping; based on the damping expressions of different types of damping, determining the quality factor expression under the influence of different types of damping; according to the ideal The gas state equation and the expression of the quality factor under the influence of different types of damping determine the correlation between the quality factor and the air pressure.

在一个实施例中,计算机程序被处理器执行时还实现以下步骤:获取压膜阻尼表达式以及滑膜阻尼表达式;基于压膜阻尼表达式以及滑膜阻尼表达式,确定压膜阻尼影响下的第一品质因数表达式以及滑膜阻尼影响下的第二品质因数表达式;根据理想气体状态方程以及第一品质因数表达式,确定第一品质因数与气压之间的相关关系;根据理想气体状态方程以及第二品质因数表达式,确定第二品质因数与气压之间的相关关系;在第一品质因数与气压之间的相关关系与第二品质因数与气压之间的相关关系相同的情况下,得到品质因数与气压之间的相关关系。In one embodiment, when the computer program is executed by the processor, the following steps are also implemented: obtaining the expression of the compression film damping and the expression of the synovial film damping; based on the expression of the compression film damping and the expression of the synovial film damping, determining The first quality factor expression and the second quality factor expression under the influence of synovial film damping; according to the ideal gas state equation and the first quality factor expression, determine the correlation between the first quality factor and the air pressure; according to the ideal gas The state equation and the second quality factor expression determine the correlation between the second quality factor and the air pressure; the correlation between the first quality factor and the air pressure is the same as the correlation between the second quality factor and the air pressure Next, the correlation between quality factor and air pressure is obtained.

在一个实施例中,计算机程序被处理器执行时还实现以下步骤:基于扫频法,获取MEMS器件在真空封装条件下的品质因数。In one embodiment, when the computer program is executed by the processor, the following steps are further implemented: based on the frequency sweep method, the quality factor of the MEMS device under the condition of vacuum packaging is obtained.

在一个实施例中,计算机程序被处理器执行时还实现以下步骤:基于震荡衰减法,获取MEMS器件在真空封装条件下的品质因数。In one embodiment, when the computer program is executed by the processor, the following steps are further implemented: based on the oscillation attenuation method, the quality factor of the MEMS device under the condition of vacuum packaging is obtained.

在一个实施例中,计算机程序被处理器执行时还实现以下步骤:获取气压集合,基于气压集合,确定预设气压序列;将MEMS器件置于预设气压序列中每一气压环境下,获取MEMS器件在每一气压环境条件下的品质因数。In one embodiment, when the computer program is executed by the processor, the following steps are also implemented: obtaining the set of air pressure, and determining the preset air pressure sequence based on the set of air pressure; placing the MEMS device in each air pressure environment in the preset air pressure sequence, and obtaining the MEMS The figure of merit of the device at each atmospheric pressure ambient condition.

在一个实施例中,提供了一种计算机程序产品,包括计算机程序,该计算机程序被处理器执行时实现以下步骤:In one embodiment, a computer program product is provided, comprising a computer program, which, when executed by a processor, implements the following steps:

获取MEMS器件在真空封装条件下的品质因数;Obtain the quality factor of MEMS devices under vacuum packaging conditions;

获取MEMS器件在不同气压条件下的品质因数;Obtain the quality factor of MEMS devices under different air pressure conditions;

根据不同气压条件下的品质因数进行拟合,得到拟合方程;Fitting is carried out according to the quality factors under different air pressure conditions, and the fitting equation is obtained;

基于拟合方程以及真空封装条件下的品质因数进行计算,得到MEMS器件的腔内真空度。Based on the fitting equation and the quality factor under vacuum packaging conditions, the cavity vacuum degree of the MEMS device is obtained.

在一个实施例中,计算机程序被处理器执行时还实现以下步骤:根据不同气压条件下的品质因数进行拟合,得到拟合方程包括:获取品质因数与气压之间的相关关系,相关关系包括正相关关系以及负相关关系;基于最小二乘法以及品质因数与气压之间的相关关系,对不同气压条件下的品质因数进行线性拟合,得到拟合方程。In one embodiment, when the computer program is executed by the processor, the following steps are also implemented: performing fitting according to the quality factors under different air pressure conditions, and obtaining the fitting equation includes: obtaining the correlation between the quality factor and the air pressure, and the correlation includes Positive correlation and negative correlation; based on the least square method and the correlation between quality factor and air pressure, the quality factor under different air pressure conditions is linearly fitted to obtain the fitting equation.

在一个实施例中,计算机程序被处理器执行时还实现以下步骤:获取不同类型阻尼的阻尼表达式;基于不同类型阻尼的阻尼表达式,确定不同类型阻尼影响下的品质因数表达式;根据理想气体状态方程以及不同类型阻尼影响下的品质因数表达式,确定品质因数与气压之间的相关关系。In one embodiment, when the computer program is executed by the processor, the following steps are also implemented: obtaining damping expressions of different types of damping; based on the damping expressions of different types of damping, determining the quality factor expression under the influence of different types of damping; according to the ideal The gas state equation and the expression of the quality factor under the influence of different types of damping determine the correlation between the quality factor and the air pressure.

在一个实施例中,计算机程序被处理器执行时还实现以下步骤:获取压膜阻尼表达式以及滑膜阻尼表达式;基于压膜阻尼表达式以及滑膜阻尼表达式,确定压膜阻尼影响下的第一品质因数表达式以及滑膜阻尼影响下的第二品质因数表达式;根据理想气体状态方程以及第一品质因数表达式,确定第一品质因数与气压之间的相关关系;根据理想气体状态方程以及第二品质因数表达式,确定第二品质因数与气压之间的相关关系;在第一品质因数与气压之间的相关关系与第二品质因数与气压之间的相关关系相同的情况下,得到品质因数与气压之间的相关关系。In one embodiment, when the computer program is executed by the processor, the following steps are also implemented: obtaining the expression of the compression film damping and the expression of the synovial film damping; based on the expression of the compression film damping and the expression of the synovial film damping, determining The first quality factor expression and the second quality factor expression under the influence of synovial film damping; according to the ideal gas state equation and the first quality factor expression, determine the correlation between the first quality factor and the air pressure; according to the ideal gas The state equation and the second quality factor expression determine the correlation between the second quality factor and the air pressure; the correlation between the first quality factor and the air pressure is the same as the correlation between the second quality factor and the air pressure Next, the correlation between quality factor and air pressure is obtained.

在一个实施例中,计算机程序被处理器执行时还实现以下步骤:基于扫频法,获取MEMS器件在真空封装条件下的品质因数。In one embodiment, when the computer program is executed by the processor, the following steps are further implemented: based on the frequency sweep method, the quality factor of the MEMS device under the condition of vacuum packaging is obtained.

在一个实施例中,计算机程序被处理器执行时还实现以下步骤:基于震荡衰减法,获取MEMS器件在真空封装条件下的品质因数。In one embodiment, when the computer program is executed by the processor, the following steps are further implemented: based on the oscillation attenuation method, the quality factor of the MEMS device under the condition of vacuum packaging is obtained.

在一个实施例中,计算机程序被处理器执行时还实现以下步骤:获取气压集合,基于气压集合,确定预设气压序列;将MEMS器件置于预设气压序列中每一气压环境下,获取MEMS器件在每一气压环境条件下的品质因数。In one embodiment, when the computer program is executed by the processor, the following steps are also implemented: obtaining the set of air pressure, and determining the preset air pressure sequence based on the set of air pressure; placing the MEMS device in each air pressure environment in the preset air pressure sequence, and obtaining the MEMS The figure of merit of the device at each atmospheric pressure ambient condition.

本领域普通技术人员可以理解实现上述实施例方法中的全部或部分流程,是可以通过计算机程序来指令相关的硬件来完成,的计算机程序可存储于一非易失性计算机可读取存储介质中,该计算机程序在执行时,可包括如上述各方法的实施例的流程。其中,本申请所提供的各实施例中所使用的对存储器、数据库或其它介质的任何引用,均可包括非易失性和易失性存储器中的至少一种。非易失性存储器可包括只读存储器(Read-OnlyMemory,ROM)、磁带、软盘、闪存、光存储器、高密度嵌入式非易失性存储器、阻变存储器(ReRAM)、磁变存储器(Magnetoresistive Random Access Memory,MRAM)、铁电存储器(Ferroelectric Random Access Memory,FRAM)、相变存储器(Phase Change Memory,PCM)、石墨烯存储器等。易失性存储器可包括随机存取存储器(Random Access Memory,RAM)或外部高速缓冲存储器等。作为说明而非局限,RAM可以是多种形式,比如静态随机存取存储器(Static Random Access Memory,SRAM)或动态随机存取存储器(Dynamic RandomAccess Memory,DRAM)等。本申请所提供的各实施例中所涉及的数据库可包括关系型数据库和非关系型数据库中至少一种。非关系型数据库可包括基于区块链的分布式数据库等,不限于此。本申请所提供的各实施例中所涉及的处理器可为通用处理器、中央处理器、图形处理器、数字信号处理器、可编程逻辑器、基于量子计算的数据处理逻辑器等,不限于此。Those of ordinary skill in the art can understand that realizing all or part of the processes in the methods of the above embodiments can be completed by instructing related hardware through computer programs, and the computer programs can be stored in a non-volatile computer-readable storage medium , when the computer program is executed, it may include the procedures of the embodiments of the above-mentioned methods. Wherein, any reference to storage, database or other media used in the various embodiments provided in the present application may include at least one of non-volatile and volatile storage. Non-volatile memory can include read-only memory (Read-Only Memory, ROM), magnetic tape, floppy disk, flash memory, optical memory, high-density embedded non-volatile memory, resistive variable memory (ReRAM), magnetic variable memory (Magnetoresistive Random Access Memory, MRAM), Ferroelectric Random Access Memory (FRAM), Phase Change Memory (Phase Change Memory, PCM), graphene memory, etc. The volatile memory may include random access memory (Random Access Memory, RAM) or external cache memory. As an illustration and not a limitation, RAM can be in various forms, such as Static Random Access Memory (SRAM) or Dynamic Random Access Memory (Dynamic Random Access Memory, DRAM). The databases involved in the various embodiments provided in this application may include at least one of a relational database and a non-relational database. The non-relational database may include a blockchain-based distributed database, etc., but is not limited thereto. The processors involved in the various embodiments provided by this application can be general-purpose processors, central processing units, graphics processors, digital signal processors, programmable logic devices, data processing logic devices based on quantum computing, etc., and are not limited to this.

以上实施例的各技术特征可以进行任意的组合,为使描述简洁,未对上述实施例中的各个技术特征所有可能的组合都进行描述,然而,只要这些技术特征的组合不存在矛盾,都应当认为是本说明书记载的范围。The technical features of the above embodiments can be combined arbitrarily. For the sake of concise description, all possible combinations of the technical features in the above embodiments are not described. However, as long as there is no contradiction in the combination of these technical features, they should be It is considered to be within the range described in this specification.

以上实施例仅表达了本申请的几种实施方式,其描述较为具体和详细,但并不能因此而理解为对本申请专利范围的限制。应当指出的是,对于本领域的普通技术人员来说,在不脱离本申请构思的前提下,还可以做出若干变形和改进,这些都属于本申请的保护范围。因此,本申请的保护范围应以所附权利要求为准。The above examples only express several implementation modes of the present application, and the description thereof is relatively specific and detailed, but should not be construed as limiting the patent scope of the present application. It should be noted that those skilled in the art can make several modifications and improvements without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the present application should be determined by the appended claims.

Claims (10)

1. A method for measuring vacuum degree of a MEMS device, the method comprising:
acquiring a quality factor of the MEMS device under the vacuum packaging condition;
acquiring quality factors of the MEMS device under different air pressure conditions;
fitting according to the quality factors under the different air pressure conditions to obtain a fitting equation;
and calculating based on the fitting equation and the quality factor under the vacuum packaging condition to obtain the intracavity vacuum degree of the MEMS device.
2. The method of claim 1, wherein said fitting based on figures of merit for said different barometric conditions comprises:
acquiring a correlation between a quality factor and air pressure, wherein the correlation comprises a positive correlation and a negative correlation;
and carrying out linear fitting on the quality factors under different air pressure conditions based on a least square method and the correlation between the quality factors and the air pressure to obtain a fitting equation.
3. The method of claim 2, wherein the obtaining a correlation between the figure of merit and the barometric pressure comprises:
acquiring damping expressions of different types of damping;
determining a quality factor expression under the influence of different types of damping based on the damping expressions of different types of damping;
and determining the correlation between the quality factor and the air pressure according to an ideal air state equation and the quality factor expression under the influence of the different types of damping.
4. The method of claim 3, wherein the step of,
the obtaining damping expressions of different types of damping includes:
obtaining a squeeze film damping expression and a slide film damping expression;
The determining the quality factor expression under the influence of different types of damping based on the damping expressions of different types of damping comprises:
determining a first quality factor expression under the influence of film pressing damping and a second quality factor expression under the influence of film sliding damping based on the film pressing damping expression and the film sliding damping expression;
the determining the correlation between the quality factor and the air pressure according to the ideal air state equation and the quality factor expression under the different damping effects comprises:
determining a correlation between a first figure of merit and gas pressure according to an ideal gas state equation and the first figure of merit expression;
determining a correlation between a second figure of merit and gas pressure according to an ideal gas state equation and the second figure of merit expression;
and obtaining the correlation between the quality factor and the air pressure under the condition that the correlation between the first quality factor and the air pressure is the same as the correlation between the second quality factor and the air pressure.
5. The method of claim 1, wherein the obtaining a quality factor of the MEMS device under vacuum packaging conditions comprises:
Based on a sweep frequency method, the quality factor of the MEMS device under the vacuum packaging condition is obtained.
6. The method of claim 1, wherein the obtaining a quality factor of the MEMS device under vacuum packaging conditions comprises:
based on an oscillation attenuation method, the quality factor of the MEMS device under the vacuum packaging condition is obtained.
7. The method of claim 1, wherein the obtaining the figures of merit for the MEMS device under different barometric conditions comprises:
acquiring an air pressure set, and determining a preset air pressure sequence based on the air pressure set;
and placing the MEMS device in each air pressure environment in the preset air pressure sequence, and obtaining the quality factor of the MEMS device under each air pressure environment condition.
8. A MEMS device vacuum measurement apparatus, the apparatus comprising:
the first acquisition module is used for acquiring the quality factor of the MEMS device under the vacuum packaging condition;
the second acquisition module is used for acquiring the quality factors of the MEMS device under different air pressure conditions;
the fitting module is used for fitting according to the quality factors under the different air pressure conditions to obtain a fitting equation;
and the calculation module is used for calculating based on the fitting equation and the quality factor under the vacuum packaging condition to obtain the intracavity vacuum degree of the MEMS device.
9. A computer device comprising a memory and a processor, the memory storing a computer program, characterized in that the processor implements the steps of the method of any of claims 1 to 7 when the computer program is executed.
10. A computer readable storage medium, on which a computer program is stored, characterized in that the computer program, when being executed by a processor, implements the steps of the method of any of claims 1 to 7.
CN202310446718.2A 2023-04-23 2023-04-23 MEMS device vacuum measurement method, device, computer equipment and storage medium Pending CN116659740A (en)

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