CN116645804B - Infrared receiving head circuit supporting multiple standards - Google Patents

Infrared receiving head circuit supporting multiple standards

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Publication number
CN116645804B
CN116645804B CN202310234693.XA CN202310234693A CN116645804B CN 116645804 B CN116645804 B CN 116645804B CN 202310234693 A CN202310234693 A CN 202310234693A CN 116645804 B CN116645804 B CN 116645804B
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China
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resistor
transistor
infrared
mos transistor
power supply
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CN116645804A (en
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钟宁
曾璐
周卿权
郭新星
曹智
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Shenzhen Hdcvt Technology Co ltd
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Shenzhen Hdcvt Technology Co ltd
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    • GPHYSICS
    • G08SIGNALLING
    • G08CTRANSMISSION SYSTEMS FOR MEASURED VALUES, CONTROL OR SIMILAR SIGNALS
    • G08C23/00Non-electrical signal transmission systems, e.g. optical systems
    • G08C23/04Non-electrical signal transmission systems, e.g. optical systems using light waves, e.g. infrared
    • GPHYSICS
    • G08SIGNALLING
    • G08CTRANSMISSION SYSTEMS FOR MEASURED VALUES, CONTROL OR SIMILAR SIGNALS
    • G08C17/00Arrangements for transmitting signals characterised by the use of a wireless electrical link
    • G08C17/02Arrangements for transmitting signals characterised by the use of a wireless electrical link using a radio link

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Selective Calling Equipment (AREA)

Abstract

本申请涉及一种支持多种标准的红外接收头电路,其包括控制模块、线序匹配模块和信号电平转换模块。红外接收头通过红外输入座和线序匹配模块连接,在确定红外接收头的接口类型之后,由控制模块来共同输出第一控制信号和第二控制信号。此时线序匹配模块在接收第一控制信号和第二控制信号之后,更改红外输入座中对应线序之间的类型,以适用红外线材的接口类型。然后通过信号电平转换模块对红外输入座中接收的红外信号进行电平转变,并将不同高低电平触发检测转变为低电平触发检测,实现后续芯片进行统一解码。

The present application relates to an infrared receiving head circuit that supports multiple standards, which includes a control module, a line sequence matching module, and a signal level conversion module. The infrared receiving head is connected to the line sequence matching module through an infrared input socket. After determining the interface type of the infrared receiving head, the control module jointly outputs a first control signal and a second control signal. At this time, after receiving the first control signal and the second control signal, the line sequence matching module changes the type between the corresponding line sequences in the infrared input socket to adapt to the interface type of the infrared wire material. The infrared signal received in the infrared input socket is then level-converted by the signal level conversion module, and different high and low level trigger detections are converted into low level trigger detections, so that subsequent chips can perform unified decoding.

Description

Infrared receiving head circuit supporting multiple standards
Technical Field
The application relates to the technical field of infrared receiving circuits, in particular to an infrared receiving head circuit supporting multiple standards.
Background
The infrared remote control is a wireless and non-contact control technology, has the remarkable advantages of strong anti-interference capability, reliable information transmission, low power consumption, low cost, easy realization and the like, and is adopted by various electronic equipment, in particular to household appliances.
At present, infrared receiving wires circulating in the market are various, and not only are 5V and 12V power supply distinguished, but also different places exist for interface definition of the receiving wires under the same power supply voltage. In this case, the user often cannot know which interface definition the infrared receiving line on the hand is, and blindly accesses the controlled device for use, if the user is light, the infrared remote control function cannot be used, and if the user is heavy, the receiving line or the controlled device may be burned.
In the related art, aiming at the infrared receiving wires defined by different interfaces, the existing interface circuit cannot be adjusted in time, and the defect that the infrared receiving heads defined by various interfaces cannot be adapted exists.
Disclosure of Invention
In order to adapt to the infrared receiving heads defined by various interfaces, the application provides an infrared receiving head circuit supporting various standards.
The application provides an infrared receiving head circuit supporting multiple standards, which adopts the following technical scheme.
An infrared receiver head circuit supporting multiple standards, comprising:
The control module is used for outputting a first control signal and a second control signal according to the selected interface type;
the line sequence matching module is respectively connected with the infrared input seat and the control module, comprises a line sequence switching unit, a first power supply switching unit and a second power supply switching unit, wherein the line sequence switching unit and the first power supply switching unit are connected with the infrared input seat, the second power supply switching unit is respectively connected with the line sequence power supply unit and the first power supply unit, the first power supply switching unit is configured to receive a first control signal, then change one pin voltage of the infrared input seat and simultaneously output a third control signal, the second power supply switching unit is configured to receive the first control signal and the third control signal, then output a standard voltage, and the line sequence switching unit is configured to receive the second control signal and the standard voltage so as to change other two pin voltages of the infrared input seat;
The signal level conversion module is respectively connected with the infrared input seat and the control module and is configured to perform level conversion on the received infrared signals under various line sequence standards according to the received first control signals so as to obtain detection trigger signals with unified trigger modes.
By adopting the technical scheme, after the line sequence of the infrared receiving head is determined, a control module outputs a corresponding control signal. At this time, the line sequence switching unit, the first power supply switching unit and the second power supply switching unit in the line sequence matching module perform power supply switching on the line sequence of the infrared receiving head connected in the infrared input seat, the types among different cables are changed, the switching and conversion among power supply, ground wires and signal wires of the different cables are realized, the signal level conversion module converts the received infrared signals to form a unified detection trigger signal, and the subsequent functional modules conveniently perform unified identification on the detection trigger signal.
Drawings
Fig. 1 is a schematic diagram of parameters of an infrared receiver head under different interface types in the related art.
Fig. 2 is a system block diagram of an infrared receiver head circuit supporting multiple standards according to an embodiment of the application.
Fig. 3 is a schematic circuit diagram of a line-sequential switching unit supporting multiple standards of infrared receiver circuits according to an embodiment of the present application.
Fig. 4 is a schematic circuit diagram of a first power switching unit supporting multiple standards of infrared receiver circuits according to an embodiment of the present application.
Fig. 5 is a schematic circuit diagram of a second power switching unit supporting multiple standard infrared receiver circuits according to an embodiment of the present application.
Fig. 6 is a schematic circuit diagram of a nand gate unit supporting multiple standard ir receiver head circuits in accordance with an embodiment of the present application.
Fig. 7 is a schematic circuit diagram of a level triggering unit supporting multiple standard infrared receiver head circuits according to an embodiment of the present application.
The reference numerals indicate that 1, a control module, 2, an infrared input seat, 3, a line sequence matching module, 31, a line sequence switching unit, 32, a first power supply switching unit, 33, a second power supply switching unit, 4, a signal level conversion module, 41, a NAND gate unit, 42 and a level triggering unit.
Detailed Description
The present application will be described in further detail with reference to fig. 1 to 7.
The 3.5MM infrared receiving wire interfaces circulated in the market are defined in various ways, and the wire interfaces are not only divided into 5V and 12V power supplies, but also connected in different wire sequences under the same power supply voltage. As shown in part a of fig. 1, the infrared receiving wire interfaces are typically TRS interfaces, corresponding to the names TIP, RING and SLEEVE. Under the TRS interface structure, there may be different interface definitions of the receive wires produced by different manufacturers. For a non-standard 5V interface, the TIP terminal is the signal line, the RING is the 5V power line, and the SLEEVE terminal is the ground, as described in section B of fig. 1. For a standard 5V interface, the TIP end is a 5V power line, the RING RING is a signal line, and the SLEEVE end is a ground line. For a standard 12V interface, the TIP end is a signal line, the RING RING is a ground line, and the SLEEVE end is a 12V power line.
In addition, the default level state and the trigger level state of the signal line are different for different types of interfaces. As shown in part C of fig. 1, when the interface supplies power to the 5V power supply, the default level of the signal line is high, and the trigger is low. When the interface supplies power for the 12V power supply, the default level of the signal line is low level, and the trigger level is high level.
The embodiment of the application discloses an infrared receiving head circuit supporting multiple standards, which can supply power to infrared receiving heads with different interface types for use, simultaneously receives infrared trigger signals, and carries out level transition on the trigger signals to form uniform detection trigger signals, thereby realizing that a back-end chip can decode infrared signals generated by infrared generating devices with all interface types when decoding.
Referring to fig. 2, an infrared receiver head circuit supporting various standards includes a control module 1, a line sequence matching module 3, and a signal level conversion module 4. The infrared receiving head is connected with the line sequence matching module 3 through the infrared input seat 2, and after the interface type of the infrared receiving head is determined, the control module 1 outputs a first control signal and a second control signal together. At this time, the wire sequence matching module 3 changes the type between the corresponding wire sequences in the infrared input seat 2 after receiving the first control signal and the second control signal, so as to be applicable to the interface type of the infrared wire. Then, the signal level conversion module 4 carries out level conversion on the infrared signals received in the infrared input seat 2, and converts different high and low level trigger detection into low level trigger detection, so that unified decoding of subsequent chips is realized.
The line sequence matching module 3 is connected to the infrared input base 2 and the control module 1, and the line sequence matching module 3 includes a line sequence switching unit 31, a first power supply switching unit 32, and a second power supply switching unit 33. The first power supply switching unit 32 is used for determining whether to provide 12V power according to the first control signal, and the second power supply switching unit 33 is used for determining whether to provide 5V power according to whether the first power supply switching unit 32 outputs the third control signal.
The line sequence switching unit 31 and the first power supply switching unit 32 are both connected to the infrared input seat 2, the second power supply switching unit 33 is respectively connected to the line sequence power supply unit and the first power supply unit, the first power supply switching unit 32 is configured to receive the first control signal and then change one pin voltage of the infrared input seat 2 and simultaneously output the third control signal, the second power supply switching unit 33 is configured to receive the first control signal and the third control signal and then output the standard voltage, and the line sequence switching unit 31 is configured to receive the second control signal and the standard voltage and then change the other two pin voltages of the infrared input seat 2.
Specifically, under the condition that the first power supply switching unit 32 controls the voltage of one pin of the infrared input seat 2 to be 0, namely, the pin is grounded, the first power supply switching unit 32 outputs a third control signal, the second power supply switching unit 33 is controlled to output 5V voltage, and meanwhile, the second control signal controls the line sequence switching unit 31 to change the line sequence, so that the type between other two wires in the infrared input seat 2 is switched between a signal wire and a power wire, and the interface type is switched between nonstandard 5V and standard 5V.
When the first power supply switching unit 32 controls the voltage of one pin of the infrared input seat 2 to be 12V, the second power supply switching unit 33 receives the first control signal, directly locks the output voltage of the second power supply switching unit 33 to be 0, namely, to be grounded, and controls the line sequence between other two wires in the infrared input seat 2 by the second control signal, so that the interface type is standard 12V.
The signal level conversion module 4 is respectively connected with the infrared input seat 2 and the control module 1, and the signal level conversion module 4 is configured to perform level conversion on the received infrared signals under various line sequence standards according to the received first control signals so as to obtain detection trigger signals with low level trigger modes.
The signal level conversion module comprises a NAND gate unit 41 and a level trigger unit 42, wherein the NAND gate unit 41 is connected with the infrared input seat 2, and the level trigger unit 42 is connected with the NAND gate unit 41. The nand gate unit 41 performs level transition on the received infrared signal in the infrared input seat 2, and the level trigger unit 42 processes the received transition level signal and outputs a detection trigger signal with a uniform trigger pattern.
Referring to fig. 3 and 4, the line-sequence switching unit 31 includes a first resistor R1, a second resistor R2, a first transistor B1, a first schottky diode D1, and a first analog switching chip U1. The first resistor R1 is connected in series between a first pin of the infrared input socket 2 and an emitter of the first triode B1, the emitter of the first triode B1 also being connected to a second pin of the infrared input socket 2. The second resistor R2 is connected in series between the third pin of the infrared input socket 2 and the base of the first triode B1, and the collector of the first triode B1 is grounded. The first pin of the infrared input seat 2 is a TIP pin, the second pin is a RING pin, and the third pin is a SLEEVE pin.
The first analog switch chip U1 is provided with an input end, a control end and two output ends, and after the control end of the first analog switch chip U1 receives a control signal, the conduction relation between the two output ends and the input end is switched inside the chip. Specifically, as shown in fig. 3, the a end of the first analog switch chip U1 is an input end, the S end is a control end, and the B0 and B1 ends are output ends, so that the first analog switch chip U1 is used as a controllable switch. One output end of the first analog switch chip U1 is connected with the second pin of the infrared input seat 2, the first pin of the infrared input seat 2 is connected with the other output end of the first analog switch chip U1, the first Schottky diode D1 is connected in series between the first pin of the infrared input seat 2 and the other output end of the first analog switch chip U1, and the cathode of the first Schottky diode D1 is connected with the first pin of the infrared input seat 2. The first analog switch chip U1 is powered by 5V.
The first power supply switching unit 32 includes a 12V power supply, a third resistor R3, a fourth resistor R4, a fifth resistor R5, a sixth resistor R6, a seventh resistor R7, a first capacitor C1, a first MOS transistor Q1, a second MOS transistor Q2, and a third MOS transistor Q3. The third resistor R3 is connected in series between the 12V power supply and the source electrode of the first MOS tube Q1, the drain electrode of the first MOS tube Q1 is connected with the drain electrode of the second MOS tube Q2, and the source electrode of the second MOS tube Q2 is grounded. The connection node between the drain electrode of the first MOS tube Q1 and the drain electrode of the second MOS tube Q2 is connected with the third pin of the infrared input seat 2. The first MOS tube Q1 is a PMOS tube, and the second MOS tube Q2 is an NMOS tube.
The first capacitor C1 is connected in series between the 12V power supply and the grid electrode of the first MOS tube Q1, and the fourth resistor R4 is connected in parallel with the first capacitor C1. The fifth resistor R5 is connected in series between the grid electrode of the first MOS tube Q1 and the drain electrode of the third MOS tube Q3, the sixth resistor R6 is connected in series between the grid electrode of the second MOS tube Q2 and the drain electrode of the third MOS tube Q3, and the source electrode of the third MOS tube Q3 is grounded. The seventh resistor R7 is connected with the grid electrode of the third MOS tube Q3, the seventh resistor R7 receives the first control signal, and the drain electrode of the third MOS tube Q3 outputs the third control signal.
When the TRS interface type is nonstandard 5V and standard 5V, the SLEEVE pin is in a grounding state correspondingly. That is, at this time, the first MOS transistor Q1 is turned off, the second MOS transistor Q2 is turned on, the third MOS transistor Q3 is turned off, and the first control signal (i.e., 12v_ctrl in the drawing) received by the seventh resistor R7 is a low level signal. At this time, the drain electrode of the third MOS transistor Q3 outputs a third control signal, and the third control signal is a high level signal.
Referring to fig. 4 and 5, the second power supply switching unit 33 includes a 5V power supply, an eighth resistor R8, a ninth resistor R9, a tenth resistor R10, a fourth MOS transistor Q4, and a fifth MOS transistor Q5. The eighth resistor R8 is connected in series between the 5V power supply and the drain electrode of the fourth MOS tube Q4, the drain electrode of the fourth MOS tube Q4 is connected with the drain electrode of the fifth MOS tube Q5, and the source electrode of the fifth MOS tube Q5 is grounded. The ninth resistor R9 is connected to the gate of the fourth MOS transistor Q4, the ninth resistor R9 is configured to receive the third control signal, the tenth resistor R10 is connected to the gate of the fifth MOS transistor Q5, and the tenth resistor R10 is configured to receive the first control signal. The connection node between the drain electrode of the fourth MOS transistor Q4 and the drain electrode of the fifth MOS transistor Q5 outputs a standard voltage.
When the first control signal is a low level signal, the fifth MOS transistor Q5 is turned off. Because the third control signal is at a high level at this time, the fourth MOS transistor Q4 is turned on, and a 5V voltage is output from a connection node between the drain of the fourth MOS transistor Q4 and the drain of the fifth MOS transistor Q5. At this time, the first analog switch chip U1 inputs 5V voltage, and the relationship between the input terminal and the two output terminals of the first analog switch chip U1 is changed by the second control signal (i.e., 5v_ctrl), so that the 5V voltage is changed to switch back and forth between the TIP pin and the RING pin in the infrared input socket 2, and after the 5V pin position is determined, the other pin of the TIP pin and the RING pin is used as a signal line.
Specifically, when the second control signal is at a low level, the input terminal a and the output terminal B0 of the first analog switch chip U1 are turned on at this time, that is, the RING pin is a 5V pin, and the interface type is a non-standard 5V type at this time. When the second control signal is at a high level, the input terminal a and the output terminal B1 of the first analog switch chip U1 are turned on at this time, that is, the T1P pin is a 5V pin, and the interface type is a standard 5V type.
Referring to fig. 6, the nand gate unit 41 includes a power supply terminal, an eleventh resistor R11, a twelfth resistor R12, a thirteenth resistor R13, a fourteenth resistor R14, a fifteenth resistor R15, a sixteenth resistor R16, a seventeenth resistor R17, a second transistor B2, a third transistor B3, a fourth transistor B4, a second schottky diode D2, a third schottky diode D3, a second capacitor C2, and a third capacitor C3.
The second capacitor C2 is connected in series between the first pin of the infrared input socket 2 and the ground, the eleventh resistor R11 is connected in series between the first pin of the infrared input socket 2 and the base of the second triode B2, the twelfth resistor R12 is connected in series between the power supply terminal and the emitter of the second triode B2, and the collector of the second triode B2 is grounded. When the first pin is at high level, the second triode B2 is conducted, and the emitter of the second triode B2 is at low level.
The third capacitor C3 is connected in series between the second pin of the infrared input socket 2 and the ground, the thirteenth resistor R13 is connected in series between the third pin of the infrared input socket 2 and the base of the third triode B3, the fourteenth resistor R14 is connected in series between the second pin of the infrared input socket 2 and the base of the third triode B3, the fifteenth resistor R15 is connected in series between the power supply terminal and the emitter of the third triode B3, and the collector of the third triode B3 is grounded. When the second pin or the third pin is at high level, the third triode B3 is conducted, and the emission of the third triode B3 is at low level.
The second schottky diode D2 and the sixteenth resistor R16 are connected in series, and the anode of the second schottky diode D2 is connected to the emitter of the second triode B2, and the sixteen resistor is grounded. The positive pole of third schottky diode D3 is connected the projecting pole of third triode B3, and the negative pole of third schottky diode D3 and the negative pole of second schottky diode D2 are all connected in the base of fourth triode B4, and the collector ground of fourth triode B4, seventeenth resistor R17 establish ties between power end and the projecting pole of fourth triode B4, and the projecting pole of fourth triode B4 outputs the conversion level signal.
Referring to fig. 1 and 6, under the standard 12V interface type, the TIP pin is a signal line at this time, and the second triode B2 is triggered to turn off in a default state, the third triode B3 is turned on under power trigger, the base of the fourth triode B4 is in a high level state at this time, the fourth triode B4 is turned on, and the emitter of the fourth triode B4 is in a low level. When the infrared trigger is carried out, the state of the signal line is changed from low level to high level, the second triode B2 is conducted, the base electrode of the fourth triode B4 is low level, and the emitting electrode of the fourth triode B4 is high level so as to realize the level transition of the output signal.
Under the non-standard 5V type, the second triode B2 is conducted in a default state, the third triode B3 is also conducted, at the moment, the base electrode of the fourth triode B4 is at a low level, and the emission electrode of the fourth triode B4 is at a high level. When the infrared trigger is carried out, the state of the signal line is changed from high level to low level, the second triode B2 is turned off, the base electrode of the fourth triode B4 is high level, and the emission electrode of the fourth triode B4 is low level so as to realize the level transition of the output signal.
Under the standard 5V type, the second triode B2 is conducted in a default state, the third triode B3 is also conducted, at the moment, the base electrode of the fourth triode B4 is at a low level, and the emitter electrode of the fourth triode B4 is at a high level. When the infrared trigger is carried out, the state of the signal line is changed from high level to low level, the third triode B3 is turned off, the base electrode of the fourth triode B4 is high level, and the emission electrode of the fourth triode B4 is low level so as to realize the level transition of the output signal.
Referring to fig. 7, the level triggering unit 42 includes an eighteenth resistor R18, a nineteenth resistor R19, a twentieth resistor R20, a fifth transistor B5, and a second analog switch chip U2. The second analog switch chip U2 has an input terminal, a control terminal and two output terminals, wherein the input terminal corresponds to the terminal a in fig. 7, the control terminal corresponds to the terminal S in fig. 7, and the two output terminals correspond to the terminals B0 and B1 in fig. 7.
After the second analog switch chip U2 receives the first control signal at the control end, the conduction relation between the two output ends and the input end is switched. The eighteenth resistor R18 is connected to the control terminal of the second analog switch chip U2, receives the transition level signal at the input terminal of the second analog switch chip U2, and combines with the received first control signal to jointly control the voltage at the output terminal.
The twenty-first resistor R20 is connected in series with one output end of the second analog switch chip U2, the base electrode of the fifth triode B5 is connected with the other output end of the second analog switch chip U2, the collector electrode of the fifth triode B5 is grounded, two ends of the nineteenth resistor R19 are respectively connected with the base electrode and the collector electrode of the fifth triode B5, the emitter electrode of the fifth triode B5 is connected with the twenty-first resistor R20, and the emitter electrode of the fifth triode B5 outputs a detection trigger signal with unified trigger mode.
Specifically, when the first control signal is at the low level, the interface type is at the non-standard 5V or the standard 5V, and the trigger level of the non-standard 5V or the standard 5V is at the low level after the level transition of the nand gate unit 41. And at this time, the second analog switch chip U2 conducts the input end A and the output end B0, and the non-standard 5V or standard 5V is directly output through the B0 end of the second analog switch chip U2 after the low-level trigger signal output by the NAND gate, so as to realize the effective low-level trigger.
When the interface type is standard 12V, the first control signal is at high level. The standard 12V interface type is active for high level triggering after level transition by the nand gate unit 41. At this time, the second analog switch chip U2 conducts the input end a and the output end B1, and the high-level signal directly triggers the fifth triode B5 to conduct, so as to finally realize that the B0 end of the second analog switch chip U2 is low-level, and also realize that the low-level triggering is effective.
The above embodiments are not intended to limit the scope of the application, so that the equivalent changes of the structure, shape and principle of the application are covered by the scope of the application.

Claims (4)

1.一种支持多种标准的红外接收头电路,其特征在于,包括:1. An infrared receiver circuit supporting multiple standards, comprising: 控制模块(1),所述控制模块(1)用于根据选择的接口类型输出第一控制信号和第二控制信号;A control module (1), the control module (1) being configured to output a first control signal and a second control signal according to a selected interface type; 红外输入座(2),所述红外输入座(2)用于连接红外线材;An infrared input socket (2), the infrared input socket (2) is used to connect infrared wires; 线序匹配模块(3),所述线序匹配模块(3)分别和红外输入座(2)以及所述控制模块(1)连接,所述线序匹配模块(3)包括线序切换单元(31)、第一供电切换单元(32)和第二供电切换单元(33),所述线序切换单元(31)和所述第一供电切换单元(32)均连接于红外输入座(2),所述第二供电切换单元(33)分别连接所述线序切换单元和所述第一供电切换单元;所述第一供电切换单元(32)被配置为接收第一控制信号后改变红外输入座(2)的一个引脚电压并同时输出第三控制信号;所述第二供电切换单元(33)被配置接收第一控制信号和第三控制信号后输出标准电压;所述线序切换单元(31)被配置为接收第二控制信号以及标准电压以改变红外输入座(2)的其他两个引脚电压;A line sequence matching module (3) is connected to the infrared input socket (2) and the control module (1) respectively. The line sequence matching module (3) comprises a line sequence switching unit (31), a first power supply switching unit (32) and a second power supply switching unit (33). The line sequence switching unit (31) and the first power supply switching unit (32) are both connected to the infrared input socket (2), and the second power supply switching unit (33) is respectively connected to the line sequence switching unit and the first power supply switching unit; the first power supply switching unit (32) is configured to change the voltage of one pin of the infrared input socket (2) after receiving a first control signal and output a third control signal at the same time; the second power supply switching unit (33) is configured to output a standard voltage after receiving the first control signal and the third control signal; the line sequence switching unit (31) is configured to receive the second control signal and the standard voltage to change the voltages of the other two pins of the infrared input socket (2); 信号电平转换模块(4),所述信号电平转换模块(4)分别和红外输入座(2)以及所述控制模块(1)连接,所述信号电平转换模块(4)被配置为根据接收的第一控制信号来对多种线序标准下的接收的红外信号进行电平转换,以得到触发方式统一的检测触发信号;A signal level conversion module (4), the signal level conversion module (4) being connected to the infrared input socket (2) and the control module (1) respectively, and the signal level conversion module (4) being configured to perform level conversion on infrared signals received under a plurality of line sequence standards according to a received first control signal, so as to obtain a detection trigger signal with a unified triggering mode; 所述线序切换单元(31)包括第一电阻器R1、第二电阻器R2、第一三极管B1、第一肖特基二极管D1和第一模拟开关芯片U1,所述第一电阻器R1串联在红外输入座(2)的第一引脚和第一三极管B1的发射极之间,所述第一三极管B1的发射极还和红外输入座(2)的第二引脚连接,所述第二电阻器R2串联在红外输入座(2)的第三引脚和第一三极管B1的基极之间;所述第一三极管B1的集电极接地;所述第一模拟开关芯片U1包括输入端、控制端和两个输出端,所述第一模拟开关芯片U1被配置为在控制端接收第二控制信号后切换两个输出端和输入端之间的导通关系;所述第一模拟开关芯片U1的一个输出端和红外输入座(2)的第二引脚连接,所述第一肖特基二极管D1串联在第一模拟开关芯片U1的另一个输出端和红外输入座(2)的第一引脚之间,且第一肖特基二极管D1的阴极连接于红外输入座(2)的第一引脚;The line sequence switching unit (31) comprises a first resistor R1, a second resistor R2, a first transistor B1, a first Schottky diode D1 and a first analog switch chip U1, wherein the first resistor R1 is connected in series between the first pin of the infrared input socket (2) and the emitter of the first transistor B1, the emitter of the first transistor B1 is also connected to the second pin of the infrared input socket (2), the second resistor R2 is connected in series between the third pin of the infrared input socket (2) and the base of the first transistor B1; the collector of the first transistor B1 is grounded; the first analog switch chip U1 comprises an input end, a control end and two output ends, the first analog switch chip U1 is configured to switch the conduction relationship between the two output ends and the input end after the control end receives a second control signal; one output end of the first analog switch chip U1 is connected to the second pin of the infrared input socket (2), the first Schottky diode D1 is connected in series between the other output end of the first analog switch chip U1 and the first pin of the infrared input socket (2), and the cathode of the first Schottky diode D1 is connected to the first pin of the infrared input socket (2); 所述第一供电切换单元(32)包括12V电源、第三电阻器R3、第四电阻器R4、第五电阻器R5、第六电阻器R6、第七电阻器R7、第一电容器C1、第一MOS管Q1、第二MOS管Q2和第三MOS管Q3;所述第三电阻器R3串联在12V电源和第一MOS管Q1的源极之间,所述第一MOS管Q1的漏极和第二MOS管Q2的漏极连接,所述第一MOS管Q1的漏极和第二MOS管Q2的漏极之间的连接节点和红外输入座(2)的第三引脚连接;所述第一电容器C1串联在12V电源和第一MOS管Q1的栅极之间,所述第四电阻器R4和第一电容器C1并联;所述第五电阻器R5串联在第一MOS管Q1的栅极和第三MOS管Q3的漏极之间,所述第六电阻器R6串联在第二MOS管Q2的栅极和第三MOS管Q3的漏极之间,所述第二MOS管Q2的源极和第三MOS管Q3的源极均接地;所述第七电阻器R7和第三MOS管Q3的栅极连接,所述第七电阻器R7接收第一控制信号,所述第三MOS管Q3的漏极输出第三控制信号;The first power supply switching unit (32) comprises a 12V power supply, a third resistor R3, a fourth resistor R4, a fifth resistor R5, a sixth resistor R6, a seventh resistor R7, a first capacitor C1, a first MOS transistor Q1, a second MOS transistor Q2 and a third MOS transistor Q3; the third resistor R3 is connected in series between the 12V power supply and the source of the first MOS transistor Q1, the drain of the first MOS transistor Q1 is connected to the drain of the second MOS transistor Q2, and the connection node between the drain of the first MOS transistor Q1 and the drain of the second MOS transistor Q2 is connected to the third pin of the infrared input socket (2); the first capacitor C1 is connected in series between the 12V power supply and the gate of the first MOS transistor Q1. The fourth resistor R4 and the first capacitor C1 are connected in parallel. The fifth resistor R5 is connected in series between the gate of the first MOS transistor Q1 and the drain of the third MOS transistor Q3. The sixth resistor R6 is connected in series between the gate of the second MOS transistor Q2 and the drain of the third MOS transistor Q3. The source of the second MOS transistor Q2 and the source of the third MOS transistor Q3 are both grounded. The seventh resistor R7 is connected to the gate of the third MOS transistor Q3. The seventh resistor R7 receives the first control signal, and the drain of the third MOS transistor Q3 outputs the third control signal. 所述第二供电切换单元(33)包括5V电源、第八电阻器R8、第九电阻器R9、第十电阻器R10、第四MOS管Q4和第五MOS管Q5,所述第八电阻器R8串联在5V电源和第四MOS管Q4的漏极之间,所述第四MOS管Q4的漏极和第五MOS管Q5的漏极连接,所述第五MOS管Q5的源极接地,所述第九电阻器R9和第四MOS管Q4的栅极连接,所述第九电阻器R9用于接收第三控制信号,所述第十电阻器R10和所述第五MOS管Q5的栅极连接,所述第十电阻器R10用于接收第一控制信号;所述第四MOS管Q4的漏极和第五MOS管Q5的漏极之间的连接节点输出标准电压。The second power supply switching unit (33) comprises a 5V power supply, an eighth resistor R8, a ninth resistor R9, a tenth resistor R10, a fourth MOS transistor Q4 and a fifth MOS transistor Q5, wherein the eighth resistor R8 is connected in series between the 5V power supply and the drain of the fourth MOS transistor Q4, the drain of the fourth MOS transistor Q4 is connected to the drain of the fifth MOS transistor Q5, the source of the fifth MOS transistor Q5 is grounded, the ninth resistor R9 is connected to the gate of the fourth MOS transistor Q4, the ninth resistor R9 is used to receive a third control signal, the tenth resistor R10 is connected to the gate of the fifth MOS transistor Q5, and the tenth resistor R10 is used to receive a first control signal; and a connection node between the drain of the fourth MOS transistor Q4 and the drain of the fifth MOS transistor Q5 outputs a standard voltage. 2.根据权利要求1所述的支持多种标准的红外接收头电路,其特征在于:所述信号电平转换模块(4)包括与非门单元(41)和电平触发单元(42),所述与非门单元(41)和红外输入座(2)连接,所述与非门单元(41)对接收的红外输入座(2)中的红外信号进行电平转变;所述电平触发单元(42)和所述与非门单元(41)连接,所述电平触发单元(42)接收的转变电平信号,并输出触发方式统一的检测触发信号。2. The infrared receiving head circuit supporting multiple standards according to claim 1 is characterized in that: the signal level conversion module (4) includes a NAND gate unit (41) and a level trigger unit (42), the NAND gate unit (41) is connected to the infrared input socket (2), and the NAND gate unit (41) performs level conversion on the infrared signal received in the infrared input socket (2); the level trigger unit (42) is connected to the NAND gate unit (41), and the level trigger unit (42) receives the conversion level signal and outputs a detection trigger signal with a unified trigger mode. 3.根据权利要求2所述的支持多种标准的红外接收头电路,其特征在于:所述与非门单元(41)包括电源端、第十一电阻器R11、第十二电阻器R12、第十三电阻器R13、第十四电阻器R14、第十五电阻器R15、第十六电阻器R16、第十七电阻器R17、第二三极管B2、第三三极管B3、第四三极管B4、第二肖特基二极管D2、第三肖特基二极管D3、第二电容器C2和第三电容器C3;所述第二电容器C2串联在红外输入座(2)的第一引脚和地线之间,所述第十一电阻器R11串联在红外输入座(2)的第一引脚和第二三极管B2的基极之间,所述第十二电阻器R12串联在电源端和第二三极管B2的发射极之间,所述第二三极管B2的集电极接地;所述第二肖特基二极管D2和第十六电阻器R16串联,所述第二肖特基二极管D2的阳极连接第二三极管B2的发射极,所述第十六电阻器R16接地;所述第三电容器C3串联在红外输入座(2)的第二引脚和地线之间,所述第十三电阻器R13串联在红外输入座(2)的第三引脚和第三三极管B3的基极之间,所述第十四电阻器R14串联在红外输入座(2)的第二引脚和第三三极管B3的基极之间,所述第十五电阻器R15串联在电源端和第三三极管B3的发射极之间,所述第三三极管B3的集电极接地;所述第三肖特基二极管D3的阳极连接第三三极管B3的发射极,所述第三肖特基二极管D3的阴极和所述第二肖特基二极管D2的阴极均连接于所述第四三极管B4的基极,所述第四三极管B4的集电极接地,所述第十七电阻器R17串联在电源端和第四三极管B4的发射极之间,所述第四三极管B4的发射极输出转变电平信号。3. The infrared receiving head circuit supporting multiple standards according to claim 2 is characterized in that: the NAND gate unit (41) includes a power supply end, an eleventh resistor R11, a twelfth resistor R12, a thirteenth resistor R13, a fourteenth resistor R14, a fifteenth resistor R15, a sixteenth resistor R16, a seventeenth resistor R17, a second transistor B2, a third transistor B3, a fourth transistor B4, a second Schottky diode D2, a third Schottky diode D3, a second capacitor C2 and a third capacitor C3; the second capacitor C2 is connected in series between the first pin of the infrared input socket (2) and the ground line, the eleventh resistor R11 is connected in series between the first pin of the infrared input socket (2) and the base of the second transistor B2, the twelfth resistor R12 is connected in series between the power supply end and the emitter of the second transistor B2, and the collector of the second transistor B2 is grounded; the second Schottky diode D2 and the sixteenth resistor R16 are connected in series, and the second Schottky diode D2 The anode of the infrared input socket (2) is connected to the emitter of the second transistor B2, and the sixteenth resistor R16 is grounded; the third capacitor C3 is connected in series between the second pin of the infrared input socket (2) and the ground wire, the thirteenth resistor R13 is connected in series between the third pin of the infrared input socket (2) and the base of the third transistor B3, the fourteenth resistor R14 is connected in series between the second pin of the infrared input socket (2) and the base of the third transistor B3, and the fifteenth resistor R15 is connected in series between the power supply end and the third transistor B3 The collector of the third transistor B3 is grounded; the anode of the third Schottky diode D3 is connected to the emitter of the third transistor B3, the cathode of the third Schottky diode D3 and the cathode of the second Schottky diode D2 are both connected to the base of the fourth transistor B4, the collector of the fourth transistor B4 is grounded, the seventeenth resistor R17 is connected in series between the power supply terminal and the emitter of the fourth transistor B4, and the emitter of the fourth transistor B4 outputs a transition level signal. 4.根据权利要求3所述的支持多种标准的红外接收头电路,其特征在于:所述电平触发单元(42)包括第十八电阻器R18、第十九电阻器R19、第二十电阻器R20、第五三极管B5和第二模拟开关芯片U2,所述第二模拟开关芯片U2包括输入端、控制端和两个输出端,所述第二模拟开关芯片U2被配置为在控制端接收第一控制信号后切换两个输出端和输入端之间的导通关系;所述第二模拟开关芯片U2的输入端接收转变电平信号,所述第十八电阻器R18连接于所述第二模拟开关芯片U2的控制端以用于接收第一控制信号;所述第二十电阻器R20串联在电源端和第二模拟开关芯片U2的一个输出端,所述第五三极管B5的基极和第二模拟开关芯片U2的另一个输出端连接,所述第五三极管B5的集电极接地,所述第十九电阻器R19和第五三极管B5的基极以及集电极并联,所述第五三极管B5的发射极和第二十电阻器R20连接,所述第五三极管B5的发射极输出触发方式统一的检测触发信号。4. The infrared receiving head circuit supporting multiple standards according to claim 3 is characterized in that: the level trigger unit (42) includes an eighteenth resistor R18, a nineteenth resistor R19, a twentieth resistor R20, a fifth transistor B5 and a second analog switch chip U2, the second analog switch chip U2 includes an input end, a control end and two output ends, the second analog switch chip U2 is configured to switch the conduction relationship between the two output ends and the input end after the control end receives the first control signal; the input end of the second analog switch chip U2 receives the transition level signal, the eighteenth resistor R18 receives the transition level signal, the eighteenth resistor R19 receives the transition level signal, the fifth transistor B5 and the second analog switch chip U2 includes an input end, a control end and two output ends, the second analog switch chip U2 is configured to switch the conduction relationship between the two output ends and the input end after the control end receives the first control signal The resistor R18 is connected to the control end of the second analog switch chip U2 for receiving the first control signal; the twentieth resistor R20 is connected in series with the power supply end and an output end of the second analog switch chip U2, the base of the fifth transistor B5 is connected to the other output end of the second analog switch chip U2, the collector of the fifth transistor B5 is grounded, the nineteenth resistor R19 is connected in parallel with the base and collector of the fifth transistor B5, the emitter of the fifth transistor B5 is connected to the twentieth resistor R20, and the emitter of the fifth transistor B5 outputs a detection trigger signal with a unified triggering mode.
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