CN116377397A

CN116377397A - Vacuum vapor deposition film forming device and method for adjusting emission mechanism thereof

Info

Publication number: CN116377397A
Application number: CN202211553982.8A
Authority: CN
Inventors: 郑炳蔚; 姜友松; 王怀民; 顾康鑫; 杨运; 程序雳; 曹欣盛
Original assignee: Anhui Qimang Photoelectric Technology Co ltd
Current assignee: Anhui Qimang Photoelectric Technology Co ltd
Priority date: 2022-12-05
Filing date: 2022-12-05
Publication date: 2023-07-04

Abstract

The application discloses a vacuum evaporation film forming device and an adjusting method of a transmitting mechanism thereof, and relates to the technical field of vacuum film forming. The vacuum evaporation film forming device comprises a transmitting mechanism, a holding mechanism and a deflection focusing mechanism. The emission mechanism comprises a filament and a cover plate with a containing groove, wherein the containing groove is provided with a bottom surface, an opening and side surfaces; the projection of the outline of the opening on the plane of the bottom surface is positioned outside the bottom surface, and the filament is arranged on the bottom surface; the side surface comprises a first surface and a second surface which are oppositely arranged and connected with the high-voltage negative electrode, and the first direction is parallel to the bottom surface; a first included angle is formed between the first surface and the bottom surface, a second included angle is formed between the second surface and the bottom surface, and the first included angle and/or the second included angle are/is adjustable; the deflection focusing mechanism comprises a magnet for generating a magnetic field and a magnetic conduction assembly for guiding or changing the spatial distribution of the magnetic field. The emission mechanism of the vacuum evaporation film forming device provided by the specification can effectively adjust the shape and the size of the electron beam light spot to obtain the light spot with the shape meeting the requirement.

Description

Vacuum vapor deposition film forming device and method for adjusting emission mechanism thereof

Technical Field

The present disclosure relates to the field of vacuum coating technology, and in particular, to a vacuum vapor deposition film forming device and a method for adjusting a transmitting mechanism thereof.

Background

The electron beam evaporation technique is a technique in which an evaporation material in a crucible is directly heated by an electron beam under vacuum conditions, and the evaporation material is vaporized and transported to a substrate, and condensed on the substrate to form a thin film. The electron beam evaporation can evaporate high melting point materials, has higher evaporation heat efficiency, higher beam current density and higher evaporation speed than the common resistance heating, and the prepared film has high purity and good quality, and the thickness can be controlled more accurately, so the electron beam evaporation can be widely applied to the preparation of high-purity films, conductive glass and other optical material films.

The core of electron beam evaporation is to form a stable and focused electron beam. In the prior art, a metal cover plate with an inclined surface is usually used to be placed on the periphery of the emitting filament to form a cathode, and the metal cover plate is connected with a high-voltage cathode. Electrons escape after the emission filament is heated, and the high-voltage electric field enables the escaped electrons to be emitted from the cathode at a high speed. Since electrons are negatively charged, the inclined surface of the cover plate changes the spatial electric field distribution so that the electron beam is converged toward the center. When the electron beam light spots are round, the film material has high utilization rate and uniform evaporation. However, the existing structure cannot effectively adjust the shape and size of the electron beam spot.

Disclosure of Invention

In view of the shortcomings of the prior art, an object of the present disclosure is to provide a vacuum vapor deposition film forming apparatus and a method for adjusting an emission mechanism thereof, wherein the emission mechanism of the vacuum vapor deposition film forming apparatus can emit electron beams in an accelerated manner, and can effectively adjust the shape and size of electron beam spots to obtain spots with shapes meeting requirements.

In order to achieve the above object, embodiments of the present invention provide a vacuum vapor deposition film forming apparatus including:

an emission mechanism for emitting an electron beam, the emission mechanism including a filament capable of emitting electrons after being energized and a cover plate having a receiving groove for receiving the filament, the receiving groove having a bottom surface and an opening which are oppositely disposed, and a side surface enclosed between the bottom surface and the opening; the projection of the outline of the opening on the plane of the bottom surface is positioned outside the bottom surface, and the filament is arranged on the bottom surface; the side surface comprises a first surface and a second surface which are oppositely arranged in a first direction and connected with the high-voltage negative electrode, and the first direction is parallel to the bottom surface; a first included angle is formed between the first surface and the bottom surface, a second included angle is formed between the second surface and the bottom surface, and the first included angle and/or the second included angle are/is adjustable;

a holding mechanism for holding an evaporation material;

a deflection focusing mechanism for confining and focusing the electron beam into the holding mechanism; the deflection focusing mechanism comprises a magnet for generating a magnetic field and a magnetic conduction assembly for guiding or changing the spatial distribution of the magnetic field.

As a preferred embodiment, the magnet and the holding mechanism are located on different sides of the plane of the bottom surface.

As a preferred embodiment, the magnetic conduction assembly includes two magnetic conduction plates respectively disposed at two ends of the magnet, and at least two magnetic conduction poles respectively connected to the magnetic conduction plates.

As a preferred embodiment, the plane of the magnetic conductive plate is perpendicular to the plane of the bottom surface, and the plane of the magnetic conductive plate is perpendicular to the extending direction of the magnet.

As a preferred embodiment, the emitting mechanism is located at a central position between two magnetic conductive plates, and the magnetic conductive poles are even in number and distributed symmetrically with respect to the middle plane of two magnetic conductive plates.

As a preferred embodiment, the magnetic conducting pole is located at a side of the magnetic conducting plate away from the containing mechanism and is not higher than the magnetic conducting plate.

As a preferred embodiment, the vacuum vapor deposition film forming device further includes a scanning coil disposed on a side of the emission mechanism facing away from the holding mechanism, the electron beam being capable of passing through the scanning coil, the scanning coil being configured to provide a scanning magnetic field for scanning the electron beam on a surface of the holding mechanism.

As a preferred embodiment, the vacuum vapor deposition film forming apparatus further includes a turntable provided with a plurality of holding mechanisms in a circumferential direction, the turntable being located on a side of the bottom surface facing away from the opening, the turntable being rotatable about an axial direction.

The embodiment also provides a method for adjusting a transmitting mechanism of a vacuum evaporation film forming device, wherein the transmitting mechanism comprises a filament capable of radiating electrons after being electrified and a cover plate provided with a containing groove for containing the filament, and the containing groove is provided with a bottom surface and an opening which are oppositely arranged, and a side surface which is enclosed between the bottom surface and the opening; the projection of the outline of the opening on the plane of the bottom surface is positioned outside the bottom surface, and the filament is arranged on the bottom surface; the side surface comprises a first surface and a second surface which are oppositely arranged in a first direction and connected with the high-voltage negative electrode, and the first direction is parallel to the bottom surface; a first included angle is formed between the first surface and the bottom surface, a second included angle is formed between the second surface and the bottom surface, and the first included angle and/or the second included angle are/is adjustable; the adjusting method comprises the following steps:

and when the electron beam light spot in the containing mechanism is wider in the first direction, reducing the first included angle and/or the second included angle.

As a preferred embodiment, the side surface includes a third surface and a fourth surface which are disposed opposite to each other in a second direction parallel to the bottom surface and perpendicular to the first direction and into which the high-voltage anode is inserted; a third included angle is formed between the third surface and the bottom surface, a fourth included angle is formed between the fourth surface and the bottom surface, and the third included angle and/or the fourth included angle are/is adjustable; the plane of the bottom surface of the holding mechanism is perpendicular to the second direction; the adjustment method further comprises the following steps:

when the electron beam light spot in the containing mechanism is wider in a third direction, reducing the third included angle and/or the fourth included angle; wherein the third direction is perpendicular to the plane of the bottom surface.

The beneficial effects are that:

the emission mechanism of the vacuum evaporation film forming device provided by the embodiment comprises a filament and a cover plate, wherein the cover plate is provided with a containing groove for containing the filament, the containing groove is provided with a bottom surface and an opening which are oppositely arranged, and a side surface which is enclosed between the bottom surface and the opening, and the filament is arranged on the bottom surface; the projection of the outline of the opening on the plane of the bottom surface is positioned outside the bottom surface, namely, the outline size of the intersection of the side surface and the bottom surface is smaller than the outline size of the intersection of the side surface and the opening, so that the side surface can change the spatial electric field distribution, and the electron beam is converged towards the center. The side surface comprises a first surface and a second surface which are oppositely arranged in a first direction and connected with a high-voltage cathode, electron beams can be accelerated to be emitted, and the electron beams are restrained and focused by the deflection focusing mechanism and guided into the holding mechanism, so that evaporating materials in the holding mechanism are gasified, and the evaporating materials move to the surface to be coated after being gasified to finally form a film. The first included angle is formed between the first surface and the bottom surface, the second included angle is formed between the second surface and the bottom surface, and the shape and the size of the electron beam light spot can be effectively adjusted by adjusting the first included angle and/or the second included angle, so that the light spot with the shape meeting the requirements is obtained.

Specific embodiments of the invention are disclosed in detail below with reference to the following description and drawings, indicating the manner in which the principles of the invention may be employed. It should be understood that the embodiments of the invention are not limited in scope thereby.

Features that are described and/or illustrated with respect to one embodiment may be used in the same way or in a similar way in one or more other embodiments in combination with or instead of the features of the other embodiments.

It should be emphasized that the term "comprises/comprising" when used herein is taken to specify the presence of stated features, integers, steps or components but does not preclude the presence or addition of one or more other features, integers, steps or components.

Drawings

In order to more clearly illustrate the embodiments of the invention or the technical solutions of the prior art, the drawings which are used in the description of the embodiments or the prior art will be briefly described, it being obvious that the drawings in the description below are only some embodiments of the invention, and that other drawings can be obtained from these drawings without inventive faculty for a person skilled in the art.

Fig. 1 is a schematic view of a vacuum deposition film forming apparatus according to the present embodiment;

fig. 2 is a schematic structural view of a launching mechanism provided in the present embodiment;

fig. 3 is a schematic plan view of a receiving groove according to the present embodiment;

fig. 4 is a schematic plan view of another view of a receiving groove provided in the present embodiment;

FIG. 5 is a schematic diagram of an undesirable spot configuration;

FIG. 6 is a schematic diagram of another undesirable spot configuration;

fig. 7 is a schematic diagram of a spot configuration that meets the requirements.

Reference numerals illustrate:

100. a vacuum deposition film forming apparatus; 10. a transmitting mechanism; 1. a filament; 2. a cover plate; 21. a receiving groove; 22. a bottom surface; 23. a side surface; 24. an opening; 231. a first surface; 232. a second surface; 233. a third surface; 234. a fourth surface; 235. a first included angle; 236. a second included angle; 237. a third included angle; 238. a fourth included angle; 3. a holding mechanism; 4. a light spot; 5. an electron beam; 6. a magnet; 7. a magnetic conductive plate; 8. a magnetic guide pole; 9. a scanning coil; 11. a turntable; 12. an evaporation path; x, a first direction; y, second direction; z, third direction.

Detailed Description

In order to make the technical solution of the present invention better understood by those skilled in the art, the technical solution of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are only some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, shall fall within the scope of the invention.

It will be understood that when an element is referred to as being "disposed on" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "left," "right," and the like are used herein for illustrative purposes only and are not meant to be the only embodiment.

Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used herein in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The term "and/or" as used herein includes any and all combinations of one or more of the associated listed items.

Please refer to fig. 1. The embodiment provides a vacuum vapor deposition film forming apparatus 100, which comprises a transmitting mechanism 10, a containing mechanism 3 and a deflection focusing mechanism.

Wherein the emitting means 10 are for emitting the electron beam 5. As shown in fig. 2, the emission mechanism 10 includes a filament 1 capable of emitting electrons after being energized, and a cover plate 2 having a receiving groove 21 for receiving the filament 1. The accommodating groove 21 has a bottom surface 22 and an opening 24 which are disposed opposite to each other, and a side surface 23 which is enclosed between the bottom surface 22 and the opening 24. The filament 1 is arranged on the bottom surface 22. The projection of the outline of the opening 24 on the plane of the bottom surface 22 is located outside the bottom surface 22, i.e. the outline size of the intersection of the side surface 23 and the bottom surface 22 is smaller than the outline size of the intersection of the side surface 23 and the opening 24, so that the side surface 23 can change the spatial electric field distribution to make the electron beam 5 converge towards the center. The side surface 23 includes a first surface 231 and a second surface 232 which are disposed opposite to each other in the first direction X and which are connected to the high-voltage negative electrode, and is capable of accelerating the electron beam 5. The electron beam 5 is restrained and focused by the deflection focusing mechanism and guided into the containing mechanism 3, so that the evaporation material contained in the containing mechanism 3 is gasified, and the evaporation material moves towards the surface to be coated after being gasified to finally form a film. The first direction X is parallel to the bottom surface 22. The first surface 231 and the bottom surface 22 have a first included angle 235 therebetween, the second surface 232 and the bottom surface 22 have a second included angle 236 therebetween, the first included angle 235 and/or the second included angle 236 are adjustable, and the shape and the size of the light spot 4 of the electron beam 5 can be effectively adjusted by adjusting the first included angle 235 and/or the second included angle 236, so as to obtain the light spot 4 with the shape meeting the requirement. The deflection focusing mechanism comprises a magnet 6 for generating a magnetic field and a magnetic conduction assembly for guiding or changing the spatial distribution of the magnetic field.

In one embodiment, the first surface 231 and the second surface 232 are fixedly coupled to the bottom surface 22, respectively, and the first included angle 235 and/or the second included angle 236 cannot be adjusted after the fixed coupling. At this time, before vacuum evaporation is performed, according to the shape of the required light spot 4, the angles of the first included angle 235 and/or the second included angle 236 are adjusted, and after the adjustment is completed, the first surface 231 and the second surface 232 are respectively and fixedly connected with the bottom surface 22 (for example, a welding or integrated process may be adopted to realize the fixed connection), so as to form the transmitting mechanism 10 with a fixed structure, and the subsequent vacuum evaporation process is performed by using the transmitting mechanism 10. For different vacuum vapor deposition apparatuses, different shapes of the emission mechanism 10 satisfying the requirements are designed.

In another embodiment, the first surface 231 and the second surface 232 are movably and fixedly connected to the bottom surface 22, and the angle of the first included angle 235 and/or the second included angle 236 can be adjusted at any time, so that the first surface 231 and the second surface 232 are fixedly connected to the bottom surface 22. After the first surface 231 and the second surface 232 are fixedly connected to the bottom surface 22, respectively, the fixed connection relationship can be released, such that the angle of the first included angle 235 and/or the second included angle 236 can be adjusted.

The filament 1 in the present embodiment is a metal filament, and may be a tungsten filament, for example. The emission mechanism 10 is connected to a high-voltage negative electrode, and a high-voltage electric field of about 1kV to 10kV is applied to the surface of the emission mechanism 10, so that electrons escaping from the filament 1 can be emitted from the emission mechanism 10 at a high speed.

The magnet 6 may be an electromagnet or a permanent magnet. In one embodiment, the magnet 6 is a core around which a coil is wound for generating a magnetic field for deflecting the electron beam 5 by lorentz forces. The magnet 6 and the holding mechanism 3 are located on different sides of the plane of the bottom surface 22. The holding mechanism 3 in this embodiment may be a crucible, or any other container capable of holding an evaporation material and having an opening capable of letting the evaporation material escape and receiving the electron beam 5.

In one embodiment, as shown in fig. 3, the first included angle 235 and the second included angle 236 may be set to be equal in size, and when the angle is adjusted, the sizes of the first included angle 235 and the second included angle 236 are adjusted at the same time, so that the central position of the light spot 4 of the electron beam 5 in the first direction X is unchanged. In another embodiment, the sizes of the first included angle 235 and the second included angle 236 are not related, and only the size of the first included angle 235 or only the size of the second included angle 236 can be selected, and this embodiment only needs to adjust one of the first included angle 235 and the second included angle 236, so that the operation is convenient.

In one embodiment, the first surface 231 and the second surface 232 are both planar, and the first surface 231 and the second surface 232 are the same size and shape, so that the spatial electric field distribution is more uniform.

In this embodiment, the side surface 23 further includes a third surface 233 and a fourth surface 234 that are disposed opposite to each other in the second direction Y and that are connected to the high-voltage negative electrode, so that the electron beam 5 can be emitted at an accelerated speed. Wherein the second direction Y is parallel to the bottom surface 22 and intersects the first direction X. A third included angle 237 is formed between the third surface 233 and the bottom surface 22, a fourth included angle 238 is formed between the fourth surface 234 and the bottom surface 22, and the third included angle 237 and/or the fourth included angle 238 are/is adjustable, and the shape and the size of the light spot 4 of the electron beam 5 can be effectively adjusted by adjusting the third included angle 237 and/or the fourth included angle 238, so that the light spot 4 with the shape meeting the requirement is obtained.

In one embodiment, third surface 233 and fourth surface 234 are fixedly coupled to bottom surface 22, respectively, and the angle of third included angle 237 and/or fourth included angle 238 cannot be adjusted after the fixed coupling. At this time, before vacuum evaporation is performed, according to the shape of the light spot 4, the angles of the third included angle 237 and/or the fourth included angle 238 are adjusted, and after the adjustment, the third surface 233 and the fourth surface 234 are respectively and fixedly connected with the bottom surface 22 (for example, the fixed connection may be implemented by adopting a welding or an integral forming process), so as to form the transmitting mechanism 10 with a fixed structure, and the subsequent vacuum evaporation process is performed by using the transmitting mechanism 10. For different vacuum vapor deposition apparatuses, different shapes of the emission mechanism 10 satisfying the requirements are designed.

In another embodiment, the third surface 233 and the fourth surface 234 are movably and fixedly coupled to the bottom surface 22, respectively, and the angle of the third included angle 237 and/or the fourth included angle 238 can be adjusted at any time, such that the third surface 233 and the fourth surface 234 are fixedly coupled to the bottom surface 22, respectively. After the third surface 233 and the fourth surface 234 are fixedly coupled to the bottom surface 22, respectively, the fixed coupling relationship may be released such that the angle of the third included angle 237 and/or the fourth included angle 238 may be adjusted.

In one embodiment, as shown in fig. 4, the third included angle 237 and the fourth included angle 238 may be set to be equal in size, and when the angle is adjusted, the sizes of the third included angle 237 and the fourth included angle 238 are adjusted at the same time, so that the central position of the spot 4 of the electron beam 5 in the third direction Z is unchanged. In another embodiment, the sizes of the third included angle 237 and the fourth included angle 238 are not related, and only the size of the third included angle 237 or only the size of the fourth included angle 238 can be selected, and this embodiment only needs to adjust one of the third included angle 237 and the fourth included angle 238, so that the operation is convenient.

In one embodiment, the third surface 233 and the fourth surface 234 are both planar, and the third surface 233 and the fourth surface 234 are all the same size and shape, so that the spatial electric field distribution is more uniform.

As shown in fig. 1, the electron beam 5 emitted from the filament 1 in this embodiment is finally irradiated onto the crucible containing the evaporation material, so that the evaporation material is vaporized and then moves along the evaporation path 12 toward the surface to be coated to finally form a thin film. Wherein the plane of the bottom surface 22 of the launching mechanism 10 is perpendicular to the third direction Z, and the holding surface of the crucible is perpendicular to the second direction Y. The first direction X, the second direction Y and the third direction Z are perpendicular to each other. Preferably, the second direction Y is a vertical direction, and the first direction X and the third direction Z are two directions parallel to a horizontal plane.

In this embodiment, as shown in fig. 2, the cover 2 is square, and the first surface 231, the second surface 232, the third surface 233 and the fourth surface 234 are all planar and have the same size and shape. In other embodiments, the cover plate 2 may be regular polygon, such as regular hexagon, regular octagon, etc.

Specifically, as shown in fig. 2, two ends of the first surface 231 are adjacent to the third surface 233 and the fourth surface 234, respectively, and two ends of the second surface 232 are adjacent to the third surface 233 and the fourth surface 234, respectively. When the size of each included angle is adjusted, the position of the intersecting edge of the side surface 23 and the bottom surface 22 is kept unchanged, that is, the first surface 231, the second surface 232, the third surface 233 or the fourth surface 234 is rotated by taking the intersecting edge of the side surface 23 and the bottom surface 22 as an axis, so that the effect of adjusting the size of each included angle is achieved.

In this embodiment, the first surface 231, the second surface 232, the third surface 233 and the fourth surface 234 are disposed around the filament 1, the first included angle 235 and the second included angle 236 are kept equal, and the third included angle 237 and the fourth included angle 238 are kept equal, so that two independent inclination angles exist, the first included angle 235 and the third included angle 237 can be adjusted, as shown in fig. 3 and 4. The shape of the spot 4 in the crucible can be adjusted independently in two different directions (first direction X and third direction Z). I.e. when the spot 4 of the electron beam 5 is not round, the first 235 and third 237 angles of inclination can be adjusted independently, resulting in a relatively round spot 4 in the crucible.

It should be noted that, when the first included angle 235 is adjusted, the second included angle 236 is adjusted at the same time, so as to ensure that the first included angle 235 is equal to the second included angle 236; when adjusting the third angle 237, the fourth angle 238 is adjusted at the same time to ensure that the third angle 237 and the fourth angle 238 are equal.

In this embodiment, as shown in fig. 1, the magnetic conduction assembly includes two magnetic conduction plates 7 respectively disposed at two ends of the magnet 6, and at least two magnetic conduction poles 8 respectively connected to the magnetic conduction plates 7. The magnetic field generated by the magnet 6 is guided out by the magnetic guide plate 7, the magnetic guide pole 8 changes the spatial magnetic field distribution, and the electron beam 5 is restrained and focused into the crucible, so that the evaporation material is heated.

Preferably, the plane of the magnetic conductive plate 7 is perpendicular to the plane of the bottom surface 22, and the plane of the magnetic conductive plate 7 is perpendicular to the extending direction of the magnet 6. That is, the magnet 6 extends along the first direction X, and the plane of the magnetic conductive plate 7 is perpendicular to the first direction X.

As shown in fig. 1, the emitting mechanism 10 is located at a central position between two magnetic conductive plates 7, and the magnetic conductive poles 8 are even in number and symmetrically distributed with respect to the middle planes of two magnetic conductive plates 7. Preferably, the magnetic pole 8 is located at a side of the magnetic conductive plate 7 away from the holding mechanism 3 and is not higher than the magnetic conductive plate 7, so that the magnetic pole 8 does not interfere with the evaporation path 12, and the coating effect of vacuum evaporation can be optimized.

As shown in fig. 1, the vacuum vapor deposition film forming apparatus 100 further includes a scanning coil 9 disposed on a side of the emission mechanism 10 facing away from the holding mechanism 3, the electron beam 5 can pass through the scanning coil 9, and the scanning coil 9 is configured to provide a scanning magnetic field for scanning the electron beam 5 on the surface of the holding mechanism 3.

Further, the vacuum vapor deposition film forming apparatus 100 further includes a turntable 11 provided with a plurality of holding mechanisms 3 in a circumferential direction, the turntable 11 is located on a side of the bottom surface 22 facing away from the opening 24, and the turntable 11 is rotatable about an axial direction. The axial direction is the second direction Y. The scanning coil 9 makes the electron beam 5 scan around the crucible surface, when the material in one crucible is evaporated, the turntable 11 rotates, the electron beam 5 is incident to the next crucible, and the evaporation coating is continued.

The embodiment also provides a method for adjusting the emission mechanism 10 of the vacuum vapor deposition film forming apparatus 100, the method comprising the steps of:

step S100: when the spot 4 of the electron beam 5 in the holding means 3 is wider in the first direction X, the size of the first angle 235 and/or the second angle 236 is reduced.

Specifically, as shown in fig. 5, when the spot 4 of the electron beam 5 in the crucible is wider in the first direction X, the magnitudes of the first angle 235 and the second angle 236 are reduced, so that a more circular spot 4 shown in fig. 7 can be obtained.

Specifically, the adjusting method further comprises the following steps:

step S200: when the spot 4 of the electron beam 5 in the holding means 3 is wider in the third direction Z, the size of said third angle 237 and/or said fourth angle 238 is reduced.

Specifically, as shown in fig. 6, when the spot 4 of the electron beam 5 in the crucible is wider in the third direction Z, the magnitudes of the third angle 237 and the fourth angle 238 are reduced, so that a more circular spot 4 shown in fig. 7 can be obtained.

It should be noted that, in the description of the present specification, the terms "first," "second," and the like are used for descriptive purposes only and to distinguish between similar objects, and there is no order of preference therebetween, nor should it be construed as indicating or implying relative importance. In addition, in the description of the present specification, unless otherwise indicated, the meaning of "a plurality" is two or more.

Any numerical value recited herein includes all values of the lower and upper values that are incremented by one unit from the lower value to the upper value, as long as there is a separation of at least two units between any lower value and any higher value. For example, if it is stated that the number of components or the value of a process variable (e.g., temperature, pressure, time, etc.) is from 1 to 90, preferably from 20 to 80, more preferably from 30 to 70, then the purpose is to explicitly list such values as 15 to 85, 22 to 68, 43 to 51, 30 to 32, etc. in this specification as well. For values less than 1, one unit is suitably considered to be 0.0001, 0.001, 0.01, 0.1. These are merely examples that are intended to be explicitly recited in this description, and all possible combinations of values recited between the lowest value and the highest value are believed to be explicitly stated in the description in a similar manner.

Unless otherwise indicated, all ranges include endpoints and all numbers between endpoints. "about" or "approximately" as used with a range is applicable to both endpoints of the range. Thus, "about 20 to 30" is intended to cover "about 20 to about 30," including at least the indicated endpoints.

All articles and references, including patent applications and publications, disclosed herein are incorporated by reference for all purposes. The term "consisting essentially of …" describing a combination shall include the identified element, ingredient, component or step as well as other elements, ingredients, components or steps that do not substantially affect the essential novel features of the combination. The use of the terms "comprises" or "comprising" to describe combinations of elements, components, or steps herein also contemplates embodiments consisting essentially of such elements, components, or steps. By using the term "may" herein, it is intended that any attribute described as "may" be included is optional.

Multiple elements, components, parts or steps can be provided by a single integrated element, component, part or step. Alternatively, a single integrated element, component, part or step may be divided into separate plural elements, components, parts or steps. The disclosure of "a" or "an" to describe an element, component, section or step is not intended to exclude other elements, components, sections or steps.

It is to be understood that the above description is intended to be illustrative, and not restrictive. Many embodiments and many applications other than the examples provided will be apparent to those of skill in the art upon reading the above description. The scope of the present teachings should, therefore, be determined not with reference to the above description, but instead should be determined with reference to the appended claims, along with the full scope of equivalents to which such claims are entitled. The disclosures of all articles and references, including patent applications and publications, are incorporated herein by reference for the purpose of completeness. The omission of any aspect of the subject matter disclosed herein in the preceding claims is not intended to forego such subject matter, nor should the inventors regard such subject matter as not be considered to be part of the disclosed subject matter.

Claims

1. A vacuum vapor deposition film forming apparatus includes:

a holding mechanism for holding an evaporation material;

2. The vacuum vapor deposition film forming apparatus according to claim 1, wherein the magnet and the holding mechanism are located on different sides of a plane in which the bottom surface is located.

3. The vacuum deposition film forming apparatus according to claim 1, wherein the magnetic conductive member comprises two magnetic conductive plates provided at both ends of the magnet, respectively, and at least two magnetic conductive poles connected to the magnetic conductive plates, respectively.

4. The vacuum deposition film forming apparatus according to claim 3, wherein the plane of the magnetic conductive plate is perpendicular to the plane of the bottom surface, and the plane of the magnetic conductive plate is perpendicular to the extending direction of the magnet.

5. The vacuum deposition film forming apparatus according to claim 4, wherein the emission mechanism is located at a center position between the two magnetic conductive plates, and the magnetic conductive poles are even in number and are symmetrically distributed with respect to a middle plane of the two magnetic conductive plates.

6. The vacuum deposition film forming apparatus according to claim 3, wherein the magnetic conductive pole is located on a side of the magnetic conductive plate facing away from the holding mechanism and is not higher than the magnetic conductive plate.

7. The vacuum vapor deposition film forming apparatus according to claim 1, further comprising a scanning coil provided on a side of the emission mechanism facing away from the holding mechanism, the electron beam being capable of passing through the scanning coil, the scanning coil being configured to provide a scanning magnetic field for scanning the electron beam over a surface of the holding mechanism.

8. The vacuum vapor deposition film forming apparatus according to claim 1, further comprising a turntable provided with a plurality of holding mechanisms in a circumferential direction, the turntable being located on a side of the bottom surface facing away from the opening, the turntable being rotatable about an axial direction.

9. The method for adjusting the emission mechanism of the vacuum evaporation film forming device comprises a filament capable of emitting electrons after being electrified and a cover plate provided with a containing groove for containing the filament, wherein the containing groove is provided with a bottom surface and an opening which are oppositely arranged, and a side surface which is enclosed between the bottom surface and the opening; the projection of the outline of the opening on the plane of the bottom surface is positioned outside the bottom surface, and the filament is arranged on the bottom surface; the side surface comprises a first surface and a second surface which are oppositely arranged in a first direction and connected with the high-voltage negative electrode, and the first direction is parallel to the bottom surface; a first included angle is formed between the first surface and the bottom surface, a second included angle is formed between the second surface and the bottom surface, and the first included angle and/or the second included angle are/is adjustable; the adjusting method comprises the following steps:

10. The adjustment method of the emission mechanism according to claim 9, wherein the side surface includes a third surface and a fourth surface that are disposed opposite to each other in a second direction parallel to the bottom surface and perpendicular to the first direction and that are connected to the high-voltage negative electrode; a third included angle is formed between the third surface and the bottom surface, a fourth included angle is formed between the fourth surface and the bottom surface, and the third included angle and/or the fourth included angle are/is adjustable; the plane of the bottom surface of the holding mechanism is perpendicular to the second direction; the adjustment method further comprises the following steps: