CN116345184A - Ultra-bandwidth terahertz graphene absorber based on gradient gear column array - Google Patents
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- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 194
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 193
- 239000006096 absorbing agent Substances 0.000 title claims abstract description 66
- 238000003491 array Methods 0.000 claims abstract description 25
- 230000008878 coupling Effects 0.000 claims abstract description 25
- 238000010168 coupling process Methods 0.000 claims abstract description 25
- 238000005859 coupling reaction Methods 0.000 claims abstract description 25
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 33
- 229910052737 gold Inorganic materials 0.000 claims description 33
- 239000010931 gold Substances 0.000 claims description 33
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 15
- 239000000377 silicon dioxide Substances 0.000 claims description 8
- 235000012239 silicon dioxide Nutrition 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 230000007423 decrease Effects 0.000 claims description 3
- 229920000642 polymer Polymers 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 claims description 2
- 238000010521 absorption reaction Methods 0.000 abstract description 50
- 230000000694 effects Effects 0.000 abstract description 11
- 230000001808 coupling effect Effects 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 184
- 239000000126 substance Substances 0.000 description 21
- 239000000463 material Substances 0.000 description 15
- 230000005684 electric field Effects 0.000 description 10
- 230000008859 change Effects 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 239000002356 single layer Substances 0.000 description 5
- 238000002835 absorbance Methods 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 229910000510 noble metal Inorganic materials 0.000 description 3
- 238000011160 research Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000033228 biological regulation Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 230000007425 progressive decline Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 238000012958 reprocessing Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q17/00—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems
- H01Q17/008—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems with a particular shape
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/003—Light absorbing elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/008—Surface plasmon devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0086—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices having materials with a synthesized negative refractive index, e.g. metamaterials or left-handed materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Investigating Or Analysing Materials By Optical Means (AREA)
Abstract
The invention discloses an ultra-bandwidth terahertz graphene absorber based on a gradient gear column array, which comprises the following components: the gear column comprises a basal layer, a plurality of gear column array layers and a plurality of graphene plane layers, wherein the gear column array layers and the graphene plane layers are arranged on the basal layer; the gear column array layers and the graphene plane layers are alternately distributed, and a plurality of gear column arrays, graphene plane layers and gear column arrays are cascaded to form a coupling resonant cavity; a plurality of gear post-to-gear post coupled resonant cavities are formed in each gear post array layer. According to the invention, the cascade coupling resonant cavity is formed by arranging the multi-layer gear column array between the multi-layer graphene planar layers, and the generated coupling resonant cavity effect can increase the coupling effect, so that the absorption of incident electromagnetic waves is increased, and the absorption efficiency of the terahertz graphene absorber is improved; the existence of rich coupling modes in the cascade coupling resonant cavities effectively increases the absorption bandwidth.
Description
Technical Field
The invention relates to the technical field of terahertz absorbers, in particular to an ultra-bandwidth terahertz graphene absorber based on a gradient gear column array.
Background
With the development of scientific technology, electromagnetic wave absorption technology plays an important role in the fields of energy conversion, photoelectric detection and the like, and particularly, research on terahertz absorption devices is very focused. The graphene is used as a novel semiconductor material, and can generate surface plasma of terahertz frequency band under stimulated conditions due to the conductivity similar to metal, and can flexibly control parameters by using external voltage, so that a brand-new application prospect is provided for developing an adjustable miniature terahertz absorption device.
On the other hand, terahertz waves (0.1-10 THz) are positioned between a microwave band and an infrared band, have the advantages of microwave and optical communication, are high in signal-to-noise ratio and resolution, are suitable for the communication field, and are long in wavelength, so that the terahertz waves have good penetrability and are less in attenuation in the transmission process. The characteristics lead the terahertz technology to have wide application prospect in the fields of communication, medicine, astronomy and the like.
However, the terahertz absorption rate of single-layer graphene of the practical terahertz absorber is low due to the limitation of the characteristics of the graphene material, and the absorption bandwidth is limited, which brings a certain limitation to practical application.
Accordingly, the prior art is still in need of improvement and development.
Disclosure of Invention
In view of the defects of the prior art, the invention aims to provide an ultra-bandwidth terahertz graphene absorber based on a gradient gear column array, and aims to solve the problems of low absorptivity and narrow absorption bandwidth of the existing terahertz absorber.
The technical scheme adopted by the invention for solving the technical problems is as follows:
ultra-bandwidth terahertz graphene absorber based on gradient gear column array, wherein the ultra-bandwidth terahertz graphene absorber comprises: the gear column comprises a basal layer, a plurality of gear column array layers and a plurality of graphene plane layers, wherein the gear column array layers and the graphene plane layers are arranged on the basal layer; the gear column array layers and the graphene plane layers are alternately distributed, and a plurality of gear column arrays, graphene plane layers and gear column arrays are cascaded to form a coupling resonant cavity; a plurality of gear post-to-gear post coupled resonant cavities are formed in each gear post array layer.
The ultra-bandwidth terahertz graphene absorber based on the gradient gear column array is characterized in that the number of layers of the gear column array layer is not less than 3, and the number of layers of the graphene planar layer is not less than 2.
The ultra-bandwidth terahertz graphene absorber based on the gradual change gear column array is characterized in that the gear columns in the gear column array layer are arranged in a square lattice or a triangular lattice; each gear column comprises 10-20 sawteeth and a center column arranged at the center of the gear column.
The ultra-wide band terahertz graphene absorber based on the gradient gear column array is characterized in that the cross section of the center column is one of a circle, an ellipse, a square, a rectangle, a triangle and a polygon; the gear column is made of a high-refractive-index medium, and the refractive index of the high-refractive-index medium is larger than 2.5; the center column is made of a first low-refractive-index medium, and the refractive index of the first low-refractive-index medium is smaller than 2.0.
The ultra-wide band terahertz graphene absorber based on the gradient gear column array is characterized in that the gear column is made of silicon, and the center column is made of silicon dioxide.
The ultra-wide band terahertz graphene absorber based on the gradient gear column array is characterized in that the size of the gear column is gradually reduced along the direction deviating from the basal layer.
The ultra-bandwidth terahertz graphene absorber based on the gradient gear column array comprises a substrate plane layer and a reflection plane layer, wherein the substrate plane layer is made of a second low-refractive-index medium, and the refractive index of the second low-refractive-index medium is smaller than 2.0.
The ultra-bandwidth terahertz graphene absorber based on the gradient gear column array is characterized in that the substrate plane layer is made of silicon dioxide, and the reflecting plane layer is made of gold or silver.
The ultra-bandwidth terahertz graphene absorber based on the gradient gear column array is characterized in that an electrode is further arranged on each graphene planar layer, and the electrode is one or two of a gold electrode and an alloy electrode.
The ultra-bandwidth terahertz graphene absorber based on the gradient gear column array is characterized in that a third low-refractive-index medium is filled between the gear column array layer and the graphene plane layer, and the refractive index of the third low-refractive-index medium is smaller than 2.0; the third low refractive index medium is a high molecular polymer.
The beneficial effects are that: the invention discloses an ultra-bandwidth terahertz graphene absorber based on a gradient gear column array, wherein a cascade coupling resonant cavity is formed by arranging a plurality of layers of gradient gear column arrays between a plurality of layers of graphene plane layers, when electromagnetic waves are incident into the graphene absorber, graphene is stimulated to generate surface plasmons, and under the action of photon local effect, the energy of the electromagnetic waves is coupled into the surface plasmons, and the generated coupling resonant cavity effect can increase the coupling effect, so that the absorption of the incident electromagnetic waves is increased, and the absorption efficiency of the terahertz graphene absorber is improved; in addition, rich coupling modes exist in the cascade coupling resonant cavities, so that the absorption bandwidth is effectively increased, and the practical application range of the terahertz graphene absorber is further improved.
Drawings
Fig. 1 is a schematic diagram of the overall structure of a terahertz graphene absorber in the invention.
Fig. 2 is a schematic diagram of a gear column structure in the terahertz graphene absorber in the invention.
Fig. 3 is an absorption graph of the terahertz graphene absorber in the present invention calculated when the chemical potential of graphene is 0.8eV, 1.0eV, 1.2eV, 1.4eV, 1.5 eV.
Fig. 4 is an x-y cross-sectional electric field amplitude profile for a single gear column in the uppermost gear column array at a frequency of 6.0THz for a terahertz graphene absorber in some embodiments.
Fig. 5 is an x-y cross-sectional electric field amplitude profile for a single gear column in the uppermost gear column array at a frequency of 8.0THz for a terahertz graphene absorber in some embodiments.
Fig. 6 is an x-y cross-sectional electric field amplitude profile for a single gear column in the uppermost gear column array at a frequency of 11.0THz for a terahertz graphene absorber in some embodiments.
Detailed Description
The invention provides an ultra-bandwidth terahertz graphene absorber based on a gradient gear column array, and in order to enable a person skilled in the art to better understand the scheme of the invention, the technical scheme in the embodiment of the invention will be clearly and completely described below by combining with the drawings in the embodiment of the invention, and obviously, the described embodiment is only a part of embodiments of the invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The electromagnetic wave absorption technology has important application prospect in the fields of photoelectric detection, photovoltaic technology and the like. Along with the rapid development of the terahertz technology, important research results are also obtained on the terahertz absorption device, and particularly the terahertz absorption device is developed by using an emerging material, namely a graphene material. Graphene is a novel material with a honeycomb-shaped two-dimensional hexagonal carbon structure, can generate surface plasma in a terahertz frequency band under an excited condition, has excellent and unique photoelectron characteristics, and is considered as an ideal catcher of a traditional semiconductor material. However, the absorption rate of the single-layer graphene to electromagnetic waves is low, and in order to overcome the technical problem, the absorption of the single-layer graphene is enhanced by utilizing the resonant cavity effect of the multilayer film structure, or the absorption of the single-layer graphene is enhanced by utilizing noble metal surface plasmons. However, the single-layer graphene absorber has certain limitation on absorption efficiency and absorption bandwidth, and the terahertz graphene absorber with high absorption efficiency and absorption energy bandwidth is realized by combining the multi-layer graphene with the multi-layer gear column array to obtain a plurality of cascaded coupling cavities through resonance reinforcing effect.
Based on the above, the invention provides an ultra-bandwidth terahertz graphene absorber based on a gradient gear column array, which comprises the following components: a base layer 10, a plurality of gear pillar array layers 20 and a plurality of graphene planar layers 30 disposed on the base layer 10; the gear column array layers 20 and the graphene plane layers 30 are alternately distributed, and a plurality of gear column array-graphene plane-gear column array cascade coupling resonant cavities are formed by the gear column array layers 20 and the graphene plane layers 30; a number of gear post-to-gear post coupled resonant cavities are formed in each gear post array layer 20.
Specifically, the present invention is not limited to this embodiment, and the number of layers of the gear column array layer may be selected to be equal to or greater than 3, and the number of layers of the graphene plane layer may be selected to be equal to or greater than 2, according to practical application requirements. Referring to fig. 1, the terahertz graphene absorber includes a substrate layer 10, and a plurality of gear column array layers and a plurality of graphene plane layers are vertically disposed on an upper side of the substrate layer 10, and for clarity of illustrating structural features of the present invention, the plurality of gear column array layers in this embodiment are illustrated by taking 7 layers of gear column arrays as examples, namely a first gear column array 21, a second gear column array 22, a third gear column array 23, a fourth gear column array 24, a fifth gear column array 25, a sixth gear column array 26, and a seventh gear column array 27; the plurality of graphene planar layers are illustrated by taking 6 graphene planar layers as an example, namely a first graphene planar layer 31, a second graphene planar layer 32, a third graphene planar layer 33, a fourth graphene planar layer 34, a fifth graphene planar layer 35 and a sixth graphene planar layer 36. The cross section of each gear column in the multi-layer gear column arrays 21-27 is in a gear shape, the center of each gear column comprises a center column 41, and the gear sizes of the multi-layer gear column arrays 21-27 gradually decrease from bottom to top in the vertical direction; the base layer 10 comprises a substrate planar layer 11 and a reflective planar layer 12, wherein the material of the substrate planar layer 11 is a second low refractive index medium, the refractive index of the second low refractive index medium is smaller than 2.0, preferably, the second low refractive index medium may be selected to be silicon dioxide, and the material of the reflective planar layer is a noble metal, preferably, the noble metal may be selected to be gold or silver. The gap between the multi-layer gear pillar arrays 21-27 and the multi-layer graphene planar layers 31-36 may be filled with a third low refractive index medium 00, the refractive index of the third low refractive index medium 00 is less than 2.0, and in this embodiment, the third low refractive index medium 00 may be selected to be a high molecular polymer, preferably PMMA.
The multilayer gear column arrays 21-27 and the multilayer graphene plane layers 31-36 are arranged in an alternating manner in the vertical direction on the upper side of the substrate layer 10, that is, the first gear column array 21, the first graphene plane layer 31, the second gear column array 22, the second graphene plane layer 32, the third gear column array 23, the third graphene plane layer 33, the fourth gear column array 24, the fourth graphene plane layer 34, the fifth gear column array 25, the fifth graphene plane layer 35, the sixth gear column array 26, the sixth graphene plane layer 36 and the seventh gear column array 27 are sequentially arranged from bottom to top in the vertical direction on the upper side of the substrate layer 10.
Referring to fig. 1, in some embodiments, each layer of gear column arrays 21-27 is provided with at least four gear columns, and in general, each gear column array includes at least four gear columns, so that a coupling resonant cavity effect exists in at least four directions in each gear column array, and absorption efficiency of each place on the terahertz graphene absorber tends to be stable and uniform as much as possible.
The gear sizes of the multi-layer gear column arrays 21-27 gradually decrease from bottom to top in the vertical direction, namely the gear column size of the first gear column array 21 is larger than the gear column size of the second gear column array 22, the gear column size of the second gear column array 22 is larger than the gear column size of the third gear column array 23, the gear column size of the third gear column array 23 is larger than the gear column size of the fourth gear column array 24, the gear column size of the fourth gear column array 24 is larger than the gear column size of the fifth gear column array 25, the gear column size of the fifth gear column array 25 is larger than the gear column size of the sixth gear column array 26, and the gear column size of the sixth gear column array 26 is larger than the gear column size of the seventh gear column array 27; the gear sizes of the multi-layer gear column arrays 21-27 are gradually reduced from bottom to top in the vertical direction, so that the purpose is that the gear column arrays with different sizes correspond to different coupling resonance frequencies, superposition of different resonance frequencies is facilitated, and the absorption frequency bandwidth of the graphene absorber is increased.
Referring to fig. 1, in some embodiments, any two adjacent gear column array layers of the plurality of gear column array layers at least partially overlap with the projection of the graphene planar layer sandwiched between the two gear column array layers, in this embodiment, any two adjacent gear column array layers of the plurality of gear column array layers completely overlap with the projection of the graphene planar layer sandwiched between the two gear column array layers, specifically, the first gear column array 21 and the second gear column array 22 are symmetrical with respect to the first graphene planar layer 31, the second gear column array 22 and the third gear column array 23 are symmetrical with respect to the second graphene planar layer 32, the third gear column array 23 and the fourth gear column array 24 are symmetrical with respect to the third graphene planar layer 33, the fourth gear column array 24 and the fifth gear column array 25 are symmetrical with respect to the fourth graphene planar layer 34, the fifth gear column array 25 and the sixth gear column array 26 are symmetrical with respect to the fifth graphene planar layer 35, the second gear column array 23 and the fourth gear column array 24 are not symmetrical with respect to the fourth graphene planar layer 33, and the fourth gear column array 24 are formed with a higher absorption rate than the whole graphene planar layer, and the fifth gear column array can be absorbed by the whole graphene planar layer from the upper surface layer to the lower surface of the graphene planar layer, and the whole graphene planar layer can be absorbed by the whole plane. In addition, a gear column-gear column coupling resonant cavity is formed between two adjacent gear columns in any gear column array, all the gear columns generate a resonant cavity effect, the coupling effect of the surface of the graphene plane layer is further improved, the absorption capacity of the surface of the graphene plane layer to light beams is improved, and the absorption efficiency of the terahertz graphene absorber is improved.
The multi-layer gear column arrays 21-27 and the multi-layer graphene planar layers 31-36 form a plurality of gear column arrays-graphene planar layers-gear column array cascade coupling resonant cavities, namely a first gear column array 21, a first graphene planar layer 31 and a second gear column array 22 form resonant cavities; the second gear column array 22, the second graphene plane layer 32 and the third gear column array 23 form a resonant cavity; the third gear column array 23, the third graphene planar layer 33 and the fourth gear column array 24 form a resonant cavity; the fourth gear column array 24, the fourth graphene planar layer 34 and the fifth gear column array 25 form a resonant cavity; the fifth gear column array 25, the fifth graphene planar layer 35 and the sixth gear column array 26 form a resonant cavity; the sixth gear column array 26, the sixth graphene planar layer 36, and the seventh gear column array 27 form a resonant cavity. When an electromagnetic wave is incident, graphene is stimulated to generate surface plasma, and under the action of photon local effect, the energy of the electromagnetic wave is coupled into the surface plasma, and the electromagnetic wave coupling effect can be improved through the enhanced resonance effect generated by the cascade coupling resonant cavities, so that the absorption of the incident electromagnetic wave is increased, the absorption efficiency of the terahertz graphene absorber is improved, and the absorption bandwidth is effectively increased by utilizing rich coupling modes existing in the cascade coupling resonant cavities, so that the terahertz graphene absorber with high absorption and absorption energy bandwidth is obtained, and the terahertz graphene absorber is suitable for detection and monitoring works in multiple fields such as chemistry, medical treatment and environment.
Referring to fig. 1, in some embodiments, an electrode is further disposed on each graphene planar layer, where the electrode is one or both of a gold electrode and an alloy electrode; for example, the first gold electrode 51 is disposed on the first graphene planar layer 31, the second gold electrode 52 is disposed on the second graphene planar layer 32, the third gold electrode 53 is disposed on the third graphene planar layer 33, the fourth gold electrode 54 is disposed on the fourth graphene planar layer 34, the fifth metal electrode 55 is disposed on the fifth graphene planar layer 35, the sixth gold electrode 56 is disposed on the sixth graphene planar layer 36, and the chemical potentials corresponding to the six graphene planar layers 31-36 are controlled by applying voltages to the six gold electrodes 51-56, so that the absorption rate of the graphene planar layers is controlled more flexibly.
In some embodiments, the material of the multi-layer gear column array is a high refractive index medium, the refractive index of the high refractive index medium is greater than 2.5, preferably silicon, and the gear columns in the gear column array layer are arranged in a tetragonal lattice arrangement or a triangular lattice arrangement or other regular lattice arrangement manner; each gear column comprises 10-20 sawteeth and a center column 41 arranged at the center of the gear column, the section of the center column 41 comprises any one of a circle, an ellipse, a square, a rectangle, a triangle and a polygon, the center column is arranged in each gear column, which is equivalent to a resonant cavity arranged in each gear column, which is beneficial to improving the absorptivity of the graphene planar layer, in addition, the center column is arranged in each gear column, so that the electromagnetic field distribution mode in the gear column is richer, and the absorption bandwidth of the terahertz graphene absorber is increased.
Referring to FIG. 2, in some embodiments, each of the gear post arrays 21-27 is a 9*9 square lattice gear post array, and the gear post arrays are spaced apart by a period of l 0 Height l of each gear column of 23 μm 1 Are all set to 2.4 mu m, each gear column comprises 12 symmetrically distributed saw teeth, and each gear has an inner circumference radius l 2 At 2.4 μm, each gear post center includes a radius l coincident with the center 3 The height of the central column is 2.4 μm, and the height of the central column and the height of the gear column are 1.6 μm, and the material of the central column is silicon dioxide. Wherein the size of the multi-layer gear column arrays 21-27 is gradually reduced from bottom to top in the vertical direction, and the size is expressed as a sawtooth length l 4 The progressive decrease in sequence, i.e., the serration length of each gear post in the first gear post array layer 21 is 7.4 μm, the serration length of each gear post in the second gear post array 22 is 7.25 μm, the serration length of each gear post in the third gear post array 23 is 7.1 μm, the serration length of each gear post in the fourth gear post array layer 24 is 6.95 μm, the serration length of each gear post in the fifth gear post array 25 is 6.8 μm, the serration length of each gear post in the sixth gear post array 26 is 6.65 μm,the serration length of each gear column in the seventh gear column array 27 is 6.5 μm. It should be noted that the shape and size of the multi-layer gear post arrays 21-27 are not limited to the above-described dimensions, and may be varied according to the specific application and are not limited thereto.
In some embodiments, the material of the central column 41 is a first low refractive index medium, the refractive index of the first low refractive index medium is less than 2.0, preferably silica, and the chemical property and the physical property of the silica are stable, so that the graphene planar layer is beneficial to long-term use and has good absorption rate improving effect.
Referring to fig. 1, in some embodiments, the first graphene planar layer 31 is further provided with a first gold electrode 51, the second graphene planar layer 32 is further provided with a second gold electrode 52, the third graphene planar layer 33 is further provided with a third gold electrode 53, the fourth graphene planar layer 34 is further provided with a fourth gold electrode 54, the fifth graphene planar layer 35 is further provided with a fifth gold electrode 55, and the sixth graphene planar layer 36 is further provided with a sixth gold electrode 56. Because of the specificity of the graphene material, the fermi level of the graphene material itself is changed under an applied voltage, so as to change the absorptivity of graphene to incident light, in this embodiment, the conductivity of the first graphene planar layer 31 can be adjusted by controlling the first gold electrode 51, so as to change the chemical potential parameter of the first graphene planar layer 51; the conductivity of the second graphene planar layer 32 can be adjusted by controlling the second gold electrode 52, thereby changing the chemical potential parameter of the second graphene planar layer 32; the conductivity of the third graphene planar layer 33 can be adjusted by controlling the third gold electrode 53, so that the chemical potential parameter of the third graphene planar layer 33 is changed; the conductivity of the fourth graphene planar layer 34 may be adjusted by controlling the fourth gold electrode 54, thereby changing the chemical potential parameter of the fourth graphene planar layer 34; the conductivity of the fifth graphene planar layer 35 can be adjusted by controlling the fifth metal electrode 55, so that the chemical potential parameter of the fifth graphene planar layer 35 can be changed, and the conductivity of the sixth graphene planar layer 36 can be adjusted by controlling the sixth metal electrode 56, so that the chemical potential parameter of the sixth graphene planar layer 36 can be changed. The gold electrode and the alloy electrode are good conductors of electricity, and have one or a plurality of characteristics of oxidation resistance, corrosion resistance, low overvoltage, no passivation and the like, so that the gold electrode and the alloy electrode can be used for a long time and have good stability. Therefore, the purpose of flexibly controlling the absorption efficiency and the absorption range of the terahertz graphene absorber can be achieved, the cost waste of reprocessing and manufacturing due to device parameter adjustment can be avoided, and the application of the terahertz graphene absorber in the aspects of chemistry, medical treatment, environment and the like can be enhanced.
As shown in fig. 3, the chemical potential of the graphene material is sequentially adjusted to be 1.0eV, 1.2eV and 1.4eV from 0.8eV, and is increased to be 1.5eV, the absorption frequency of the sensor is increased along with the increase of the chemical potential, and the corresponding absorption rate is improved. An absorbance at 6.0THz at a chemical potential of 0.8eV of 90.7%, and an absorbance at 6.0THz at a chemical potential of 96.2% when the chemical potential is increased to 1.5 eV; an absorbance at 8.0THz at 0.8eV and 98.3% at 8.0THz when the chemical potential is increased to 1.5 eV; the absorbance at 10.0THz was 72.8% at a chemical potential of 0.8eV, and 98.9% at a frequency of 10.0THz when the chemical potential was increased to 1.5 eV. Therefore, the invention can control the chemical potential parameter of the graphene plane by controlling the applied voltage, thereby achieving the purpose of flexibly controlling the efficiency and the range of the absorber. In addition, as shown in fig. 3, the absorption rate is maintained at 90% or more in the range of 5.5THz to 11.6THz at a chemical potential of 1.5eV, and thus the present invention can achieve high-efficiency absorption in ultra-wideband.
In some embodiments, the graphene monoplanar layer has a surface conductivity σ (ω, μ) in the terahertz range c Γ, T) may be expressed by the Drude formula:
wherein ω is angular frequency, μ c Is chemical potential Γ= (2τ) -1 For the scattering rate, τ is the relaxation time, T is the temperature, ζ is the electron energy,
to reduce Planck constant, κ B Is the boltzmann constant, and e is the electron charge. One of the significant advantages of graphene materials is its chemical potential μ c Can be controlled over a wide frequency range by adjusting the DC bias voltage V g Regulation is performed because of V g When changing, its electric field E 0 Change occurs to cause graphene carrier density n s Change, mu c A corresponding change will occur.
Specifically, as an embodiment of the present invention, the thicknesses of the first graphene planar layer 31, the second graphene planar layer 32, the third graphene planar layer 33, the fourth graphene planar layer 34, the fifth graphene planar layer 35, and the sixth graphene planar layer 36 are all 0.35nm. The first gold electrode 51, the second gold electrode 52, the third gold electrode 53, the fourth gold electrode 54, the fifth gold electrode 55, and the sixth gold electrode 56 are identical in shape, are all identical rectangular parallelepiped electrodes, have a length of 30 μm, a height of 1 μm, and a width of 1 μm; the thickness of the dielectric substrate plane layer in the base layer is 12 mu m, and the thickness of the metal reflecting layer is 2 mu m. It should be noted that the dimensions of the multi-layer gear post arrays 21-27, the multi-layer graphene planar layers 31-36, the gold electrodes 51-55, the substrate planar layer 11 in the base layer, and the reflective planar layer 12 are not limited to the above-mentioned dimensions, and may be determined according to specific applications, and are not limited herein.
Specifically, as an embodiment of the present invention, a y-axis is a direction in which the long axis of the first gold electrode 51 is located, an x-axis is a direction perpendicular to the long axis of the first gold electrode 51, and a z-axis is an upward direction perpendicular to the graphene planar layer 31, as shown in fig. 1. Electromagnetic waves vertically enter from the upper part of the seventh gear column array 27, are coupled with the multi-layer graphene plane layer through the multi-layer gear column array, are reflected back to the multi-layer gear column array and the multi-layer graphene plane layer through the metal reflection plane layer 12 of the substrate layer 10, and finally are reflected from the upper part of the seventh gear column array 27, wherein P is defined as Absorption of And P Reflection of Representing the absorptivity and reflectivity, calculating absorptivity P Absorption of ＝1－P Reflection of And obtaining the absorptivity of the terahertz graphene absorber.
As shown in fig. 4, the x-y section electric field amplitude distribution diagram of the seventh gear column array 27, which is the uppermost gear column array of the terahertz graphene absorber at the frequency of 6.0THz, corresponds to the terahertz graphene absorber in this embodiment. As can be seen, there is a strong electric field in the central cavity of the seventh gear column array 27 and in the upper and lower side saw teeth, and there is strong absorption in the corresponding position vertically projected on the sixth graphene planar layer 36.
As shown in fig. 5, the x-y section electric field amplitude distribution diagram of the seventh gear column array 27, which is the uppermost gear column array of the terahertz graphene absorber at the frequency of 8.0THz, corresponds to the terahertz graphene absorber in this embodiment. As can be seen, there is a strong electric field in the center cavity of the seventh gear post array 27 and in the left and right saw teeth, and there is strong absorption in the corresponding position vertically projected on the sixth graphene planar layer 36.
As shown in fig. 6, the x-y section electric field amplitude distribution diagram of the seventh gear column array 27, which is the uppermost gear column array of the terahertz graphene absorber at the frequency of 11.0THz, corresponds to the terahertz graphene absorber in this embodiment. As can be seen, a strong electric field exists in the central cavity of the seventh gear column array 27, in the portion of all the saw teeth close to the central cavity, and outside the saw teeth on the left and right sides, and there is strong absorption in the corresponding position vertically projected on the sixth graphene planar layer 36.
In summary, the invention discloses an ultra-bandwidth terahertz graphene absorber based on a multi-layer gradient gear column array, which comprises the following components: the gear column comprises a basal layer, a plurality of gear column array layers and a plurality of graphene plane layers, wherein the gear column array layers and the graphene plane layers are arranged on the basal layer; the gear column array layers and the graphene plane layers are alternately distributed, and a plurality of gear column arrays, graphene plane layers and gear column arrays are cascaded to form a coupling resonant cavity; a plurality of gear post-to-gear post coupled resonant cavities are formed in each gear post array layer. According to the invention, the cascade coupling resonant cavities are formed by arranging the multi-layer gradient gear column arrays between the multi-layer graphene plane layers, when electromagnetic waves are shot into the graphene absorber, the graphene is stimulated to generate surface plasmons, and under the action of photon local effect, the energy of the electromagnetic waves is coupled into the surface plasmons, and the generated coupling resonant cavity effect can increase the coupling effect, so that the absorption of the shot electromagnetic waves is increased, and the absorption efficiency of the terahertz graphene absorber is improved; in addition, rich coupling modes exist in the cascade coupling resonant cavities, so that the absorption bandwidth is effectively increased, and the practical application range of the terahertz graphene absorber is further improved.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and are not limiting; while the invention has been described in detail with reference to the foregoing embodiments, it will be appreciated by those skilled in the art that variations may be made in the techniques described in the foregoing embodiments, or equivalents may be substituted for elements thereof; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present invention.
Claims (10)
1. Ultra-bandwidth terahertz graphene absorber based on gradient gear column array, which is characterized by comprising: the gear column comprises a basal layer, a plurality of gear column array layers and a plurality of graphene plane layers, wherein the gear column array layers and the graphene plane layers are arranged on the basal layer; the gear column array layers and the graphene plane layers are alternately distributed, and a plurality of gear column arrays, graphene plane layers and gear column arrays are cascaded to form a coupling resonant cavity; a plurality of gear post-to-gear post coupled resonant cavities are formed in each gear post array layer.
2. The ultra-wideband terahertz graphene absorber based on a gradient gear column array according to claim 1, wherein the number of layers of the gear column array layer is not less than 3, and the number of layers of the graphene planar layer is not less than 2.
3. The ultra-wide band terahertz graphene absorber based on a graded gear column array according to claim 1, wherein the gear columns in the gear column array layer are arranged in tetragonal lattice or in triangular lattice; each gear column comprises 10-20 sawteeth and a center column arranged at the center of the gear column.
4. The ultra-wideband terahertz graphene absorber based on a gradient gear column array according to claim 3, wherein the cross-sectional shape of the center column is one of a circle, an ellipse, a square, a rectangle, a triangle, and a polygon; the gear column is made of a high-refractive-index medium, and the refractive index of the high-refractive-index medium is larger than 2.5; the center column is made of a first low-refractive-index medium, and the refractive index of the first low-refractive-index medium is smaller than 2.0.
5. The ultra-wide band terahertz graphene absorber based on a gradient gear column array according to claim 3, wherein the gear column is made of silicon, and the center column is made of silicon dioxide.
6. The ultra-wideband terahertz graphene absorber based on a graded gear column array according to claim 1, wherein the size of the gear column gradually decreases in a direction away from the base layer.
7. The ultra-wideband terahertz graphene absorber based on a gradient gear column array according to claim 1, wherein the base layer comprises a substrate planar layer and a reflection planar layer, the substrate planar layer is made of a second low-refractive-index medium, and the refractive index of the second low-refractive-index medium is smaller than 2.0.
8. The ultra-wideband terahertz graphene absorber based on a gradient gear column array according to claim 7, wherein the substrate planar layer is made of silicon dioxide, and the reflective planar layer is made of gold or silver.
9. The ultra-wideband terahertz graphene absorber based on a gradient gear column array according to claim 1, wherein an electrode is further arranged on each graphene planar layer, and the electrode is one or two of a gold electrode and an alloy electrode.
10. The ultra-wideband terahertz graphene absorber based on a graded gear column array according to claim 1, wherein a third low-refractive-index medium is filled between the gear column array layer and the graphene plane layer, and the refractive index of the third low-refractive-index medium is smaller than 2.0; the third low refractive index medium is a high molecular polymer.
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