CN116325104A - 半导体试验装置和半导体试验方法 - Google Patents

半导体试验装置和半导体试验方法 Download PDF

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Publication number
CN116325104A
CN116325104A CN202180066270.0A CN202180066270A CN116325104A CN 116325104 A CN116325104 A CN 116325104A CN 202180066270 A CN202180066270 A CN 202180066270A CN 116325104 A CN116325104 A CN 116325104A
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China
Prior art keywords
constant current
semiconductor
electrode
current source
semiconductor element
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CN202180066270.0A
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Chinese (zh)
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中西学
高山幸一
上野和起
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Publication of CN116325104A publication Critical patent/CN116325104A/zh
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00Testing or measuring during manufacture or treatment of wafers, substrates or devices

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  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
CN202180066270.0A 2020-10-05 2021-08-25 半导体试验装置和半导体试验方法 Pending CN116325104A (zh)

Applications Claiming Priority (3)

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JP2020-168349 2020-10-05
JP2020168349 2020-10-05
PCT/JP2021/031177 WO2022074952A1 (ja) 2020-10-05 2021-08-25 半導体試験装置および半導体試験方法

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CN116325104A true CN116325104A (zh) 2023-06-23

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CN (1) CN116325104A (https=)
WO (1) WO2022074952A1 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN120188268A (zh) * 2022-11-17 2025-06-20 三菱电机株式会社 半导体试验装置、半导体试验方法以及半导体装置的制造方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0233437U (https=) * 1988-08-26 1990-03-02
JP2006071467A (ja) * 2004-09-02 2006-03-16 Toyota Industries Corp 半導体チップの電気特性測定方法及び装置
JP5432700B2 (ja) * 2009-12-28 2014-03-05 株式会社日本マイクロニクス 半導体デバイスの検査装置
JP5584146B2 (ja) * 2011-01-20 2014-09-03 株式会社東芝 半導体装置およびその製造方法
JP5929612B2 (ja) * 2012-08-08 2016-06-08 三菱電機株式会社 半導体装置の測定方法、測定器
JP6790974B2 (ja) * 2017-04-06 2020-11-25 株式会社デンソー 半導体素子の検査装置
JP6962205B2 (ja) * 2018-01-15 2021-11-05 信越半導体株式会社 半導体装置の評価装置

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JP7479498B2 (ja) 2024-05-08
WO2022074952A1 (ja) 2022-04-14
JPWO2022074952A1 (https=) 2022-04-14

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