CN116299850A - Silicon photon packaging structure and preparation method thereof - Google Patents
Silicon photon packaging structure and preparation method thereof Download PDFInfo
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- CN116299850A CN116299850A CN202310539830.0A CN202310539830A CN116299850A CN 116299850 A CN116299850 A CN 116299850A CN 202310539830 A CN202310539830 A CN 202310539830A CN 116299850 A CN116299850 A CN 116299850A
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12007—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
- G02B2006/12061—Silicon
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12083—Constructional arrangements
- G02B2006/12109—Filter
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
The invention provides a silicon photon packaging structure and a preparation method of the silicon photon packaging structure, and relates to the technical field of chip packaging, wherein the silicon photon packaging structure comprises a substrate, a filter chip, a silicon photon module, a transparent adhesive layer and a plastic package body, the filter chip is attached to the substrate, the silicon photon module is attached to the substrate and is covered outside the filter chip, and the transparent adhesive layer is coated outside the silicon photon module; the plastic package body is coated outside the transparent adhesive layer; the plastic package body is provided with a transparent glue layer, wherein the transparent glue layer is arranged on the plastic package body, and the transparent glue layer is arranged on the plastic package body. Compared with the prior art, the invention realizes the isolation of the light treatment part from the outside through the transparent adhesive layer, avoids the influence of a grooving or cleaning process on the light treatment part, ensures the normal performance of the device, and simultaneously ensures the normal light emission of the light treatment part.
Description
Technical Field
The invention relates to the technical field of chip packaging, in particular to a silicon photon packaging structure and a preparation method of the silicon photon packaging structure.
Background
Silicon photonics (SiPh) technology is mainly to use laser beams instead of electronic signals to transmit data, and to combine optical and electronic components into a single microchip to increase the communication propagation speed. The light used as an information conduction medium on the silicon chip can obtain more excellent data transmission performance than the traditional optical fiber and reduce energy consumption.
However, the method has increasingly strict requirements on the silicon photon chip packaging process, the traditional packaging process mainly uses laser for grooving or uses a die to form an avoidance area, and the light processing part of the silicon photons is exposed out of the plastic package body so as to realize light signal transmission. The laser grooving or die mode is likely to influence the silicon photon light treatment part, and laser breakdown light treatment part or die fracturing induction area can be possibly caused to influence the performance of the device. In addition, in the prior art, plastic package particles are easy to generate in the laser grooving of the light treatment part area, the plastic package particles cannot be removed by using a water washing process, and the structural layer of the light treatment part area is affected by the particles during removal, so that the light treatment part is damaged.
Disclosure of Invention
The invention aims to provide a silicon photon packaging structure and a preparation method thereof, which can avoid the influence on a light treatment part in the slotting process and ensure the normal light emission of the light treatment part.
Embodiments of the present invention are implemented as follows:
in a first aspect, the present invention provides a silicon photonics package structure comprising:
a substrate;
a filter chip mounted on the substrate;
the silicon photonics module is mounted on the substrate, is covered outside the filter chip and forms a functional cavity around the filter chip;
a transparent adhesive layer arranged on the substrate and coated outside the silicon photon module;
the plastic package body is arranged on the substrate and coated outside the transparent adhesive layer;
the filter chip is electrically connected with the substrate, the silicon photonics module is electrically connected with the substrate, a first light treatment part is arranged on the silicon photonics module, a light transmission groove is formed in the plastic package body, the light transmission groove extends to the transparent glue layer and is correspondingly arranged with the first light treatment part, and the first light treatment part is used for outwards emitting light through the transparent glue layer.
In an alternative embodiment, the silicon photonics module includes a first silicon photonics chip and a second silicon photonics chip, the first silicon photonics chip is attached to the substrate and has a first groove with an opening facing the substrate, the second silicon photonics chip is accommodated in the first groove, a light guiding opening corresponding to the light transmitting groove is further provided on the first silicon photonics chip, the light guiding opening penetrates to the first groove, the first light processing part is provided on the first silicon photonics chip and is spaced from the first groove, the second silicon photonics chip is provided with a second light processing part corresponding to the light guiding opening, and the second silicon photonics chip is used for blocking the light guiding opening and the filter chip and forming the functional cavity around the filter chip.
In an alternative embodiment, the second silicon photonics chip is attached to the substrate, the second silicon photonics chip has a second groove with an opening facing the substrate, the filter chip is accommodated in the second groove, the second silicon photonics chip and the substrate enclose the functional chamber together, the second silicon photonics chip is electrically connected with the substrate, and the first silicon photonics chip is electrically connected with the substrate.
In an alternative embodiment, a first connection line is further provided on a side of the first silicon photonics chip remote from the substrate, the first connection line is connected to the substrate, a second connection line is provided on a side of the second silicon photonics chip remote from the substrate, and the second connection line is connected to the substrate.
In an alternative embodiment, the second silicon photonic chip is attached to the first silicon photonic chip and is attached to an inner wall of the first groove away from the substrate, the first silicon photonic chip is plugged at the light guide opening, the first silicon photonic chip, the second silicon photonic chip and the substrate jointly enclose the functional chamber, the first silicon photonic chip is electrically connected with the second silicon photonic chip, and the second silicon photonic chip is electrically connected with the substrate.
In an alternative embodiment, the second silicon photonic chip has a second groove with an opening facing away from the substrate, the second groove is communicated with the light guide opening, the inner wall of the second groove is an arc surface, and the second light processing portion is disposed at the center of the bottom wall of the second groove.
In an alternative embodiment, a conductive post is further disposed on the first silicon photonic chip, a second connection line is disposed on a side, close to the substrate, of the second silicon photonic chip, and the second connection line is connected to the conductive post, so that the second silicon photonic chip is electrically connected to the first silicon photonic chip.
In an alternative embodiment, a blocking wall is further disposed in the light-transmitting groove, and the blocking wall is embedded in the transparent glue layer and is located between the first light treatment portion and the second light treatment portion.
In an alternative embodiment, the distance H between the blocking wall and the first silicon photonics chip is less than the emission wavelengths of the first and second light treatments.
In an optional embodiment, a shielding metal column is further disposed on the first silicon photonic chip, and the shielding metal column is embedded in the transparent adhesive layer and extends to an edge position of the light-transmitting groove.
In an alternative embodiment, the surface of the transparent glue layer is hemispherical.
In a second aspect, the present invention provides a method for preparing a silicon photonic package structure according to the foregoing embodiment, the method comprising:
attaching a filter chip on a substrate;
a silicon photonics module is mounted on a substrate, the silicon photonics module is covered outside the filter chip, and a functional cavity is formed around the filter chip;
dispensing on the substrate to form a transparent adhesive layer, wherein the transparent adhesive layer is coated outside the silicon photon module;
forming a plastic package body on the substrate in a plastic package mode, wherein the plastic package body is coated outside the transparent adhesive layer;
slotting on the plastic package body to form a light-transmitting groove;
the filter chip is electrically connected with the substrate, the silicon photonics module is electrically connected with the substrate, a first light processing part is arranged on the silicon photonics module, the light-transmitting groove extends to the transparent adhesive layer and is correspondingly arranged with the first light processing part, and the first light processing part is used for emitting light outwards through the transparent adhesive layer.
The beneficial effects of the embodiment of the invention include:
according to the silicon photon packaging structure and the preparation method thereof, the filter chip is mounted on the substrate, the silicon photon module is mounted outside the filter chip, so that a functional cavity is formed around the filter chip, the transparent adhesive layer is arranged outside the silicon photon module, and finally the plastic package body is arranged outside the transparent adhesive layer, wherein the silicon photon module is provided with the first light treatment part, the transparent adhesive layer is coated outside the first light treatment part, when the light transmission groove is formed by grooving, the structure of the light treatment part is not influenced by the blocking of the transparent adhesive layer, and meanwhile, residual particles can be removed by utilizing a water washing process, and light emitted by the first light treatment part can be emitted outwards through the light transmission groove after passing through the transparent adhesive layer, so that the normal light emission of the silicon photon packaging structure is ensured. Compared with the prior art, the silicon photon packaging structure and the preparation method thereof provided by the invention realize the isolation of the light processing part from the outside through the transparent adhesive layer, avoid the influence of a slotting or cleaning process on the light processing part, ensure the normal performance of the device and ensure the normal light emission of the light processing part.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural diagram of a silicon photonic package structure according to a first embodiment of the present invention;
fig. 2 to 7 are process flow diagrams of a method for manufacturing a silicon photonic package structure according to a first embodiment of the present invention;
FIGS. 8-11 are process flow diagrams illustrating a first silicon photonics chip fabrication process in accordance with a first embodiment of the present invention;
FIG. 12 is a schematic diagram of a silicon photonic package structure according to a second embodiment of the present invention;
FIG. 13 is a schematic diagram of a silicon photonic package structure according to a third embodiment of the present invention;
fig. 14 is a schematic structural diagram of a silicon photonic package structure according to a fourth embodiment of the present invention;
FIG. 15 is a schematic diagram of a fourth embodiment of a silicon photonic package structure according to the present invention;
FIG. 16 is a schematic diagram of a silicon photonic package structure according to a fifth embodiment of the present invention;
fig. 17 is a schematic diagram of another structure of a silicon photonic package structure according to a fifth embodiment of the present invention.
Icon:
a 100-silicon photonic package structure; 110-a substrate; 130-a filter chip; a 150-silicon photonics module; 151-a first light processing section; 152-a first silicon photonics chip; 153-a second silicon photonics chip; 154-first groove; 155-a second groove; 156-light guide openings; 157-a second light processing section; 158-a sealant layer; 159-conductive posts; 170-a transparent adhesive layer; 171-a first connection line; 173-a second connection line; 175-blocking wall; 177-shielding metal posts; 190-plastic package body; 191-a light-transmitting groove; 200-optical fiber array units; 210-support metal posts.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments of the present invention. The components of the embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the invention, as presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further definition or explanation thereof is necessary in the following figures.
In the description of the present invention, it should be noted that, directions or positional relationships indicated by terms such as "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., are directions or positional relationships based on those shown in the drawings, or are directions or positional relationships conventionally put in use of the inventive product, are merely for convenience of describing the present invention and simplifying the description, and are not indicative or implying that the apparatus or element to be referred to must have a specific direction, be constructed and operated in a specific direction, and thus should not be construed as limiting the present invention. Furthermore, the terms "first," "second," "third," and the like are used merely to distinguish between descriptions and should not be construed as indicating or implying relative importance.
Furthermore, the terms "horizontal," "vertical," and the like do not denote a requirement that the component be absolutely horizontal or overhang, but rather may be slightly inclined. As "horizontal" merely means that its direction is more horizontal than "vertical", and does not mean that the structure must be perfectly horizontal, but may be slightly inclined.
In the description of the present invention, it should also be noted that, unless explicitly specified and limited otherwise, the terms "disposed," "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.
As disclosed in the background art, in the silicon photon packaging structure in the prior art, a main laser is usually used for slotting or a die is used for forming an avoidance area, and a light processing part of a silicon photon is exposed out of a plastic packaging body so as to realize light signal transmission, so that the light processing part may be affected. And, silicon photonics chips generally require fabrication of a light processing section or detector using III-V (e.g., inP) or VI group Ge on a silicon substrate or SOI substrate, however, lasing of the light processing section thereof tends to cause the chip to heat up, thereby affecting the heat dissipation of the silicon photonics chip, and the exposed area of the light processing section is susceptible to static electricity, thereby causing the light processing section thereof to be damaged by electrostatic breakdown. In addition, the conventional silicon photon packaging structure is only suitable for a single light processing part structure, namely, a single silicon photon chip realizes signal transmission, has poor integration level, and cannot realize stacking of a plurality of silicon photon chips.
In order to solve the above-mentioned problems, the present invention provides a novel silicon photonic package structure and a method for manufacturing the same, and it should be noted that the features in the embodiments of the present invention may be combined with each other without collision.
First embodiment
Referring to fig. 1, the present embodiment provides a silicon photonic package structure 100, which can avoid the influence on the light processing portion during the grooving process, and ensure the normal light output of the light processing portion. Meanwhile, the chip packaging integration level and the packaging quantity can be improved.
The silicon photon package structure 100 provided in this embodiment includes a substrate 110, a filter chip 130, a silicon photon module 150, a transparent glue layer 170 and a plastic package body 190, where the filter chip 130 is attached to the substrate 110, the silicon photon module 150 is attached to the substrate 110 and covers the filter chip 130, and meanwhile, the silicon photon module 150 is spaced from the filter chip 130 and forms a functional chamber around the filter chip 130, and the transparent glue layer 170 is disposed on the substrate 110 and covers the silicon photon module 150; the plastic package body 190 is disposed on the substrate 110 and is coated outside the transparent adhesive layer 170; the filter chip 130 is electrically connected with the substrate 110, the silicon photonics module 150 is provided with a first light processing portion 151, the plastic package body 190 is provided with a light transmission groove 191, the light transmission groove 191 extends to the transparent glue layer 170 and is arranged corresponding to the first light processing portion 151, and the first light processing portion 151 is used for emitting light outwards through the transparent glue layer 170.
In the silicon photonic package structure 100 provided in this embodiment, the filter chip 130 is mounted on the substrate 110, and the silicon photonic module 150 is mounted outside the filter chip 130, so that a functional cavity is formed around the filter chip 130, then the transparent adhesive layer 170 is arranged outside the silicon photonic module 150, and finally the plastic package body 190 is arranged outside the transparent adhesive layer 170, wherein the silicon photonic module 150 is provided with the first light processing portion 151, the transparent adhesive layer 170 is coated outside the first light processing portion 151, and when the light transmission groove 191 is formed by slotting, the structure of the light processing portion is not affected by the blocking of the transparent adhesive layer 170 during laser slotting or mould pressing slotting, and residual particles can be removed by using a water washing process, and the light emitted by the first light processing portion 151 can be emitted outwards through the light transmission groove 191 after passing through the transparent adhesive layer 170, so as to ensure the normal light emission.
It should be noted that, in this embodiment, the filter chip 130 may be a surface acoustic wave filter chip 130 (saw filter), the filter chip 130 is flip-chip mounted on the substrate 110, and a transduction area is disposed at the bottom side of the filter chip 130, and the transduction area is conducted with the functional cavity, so that the functional cavity is formed by using the functional cavity to ensure the normal implementation of the function. The substrate 110 in this embodiment may be a ceramic base plate, a lead frame, a PCB board, or the like. In addition, the light processing portion mentioned in this embodiment may be a light source or a photosensitive device, and in particular, referring to an existing silicon optical chip structure, when the photosensitive device is adopted, the light processing portion may be used as a light receiving end, and at this time, an optical fiber array unit may be additionally disposed on the upper side of the silicon photonic package structure 100, and may emit laser or other optical signals to the light processing portion through the light transmitting groove 191 and the transparent adhesive layer 170.
In this embodiment, the silicon photonics module 150 includes a first silicon photonics chip 152 and a second silicon photonics chip 153, the first silicon photonics chip 152 is mounted on the substrate 110 and has a first groove 154 with an opening facing the substrate 110, the second silicon photonics chip 153 is accommodated in the first groove 154, the first silicon photonics chip 152 is further provided with a light guiding hole 156 corresponding to the light transmitting groove 191, the light guiding hole 156 penetrates to the first groove 154, the first light processing part 151 is disposed on the first silicon photonics chip 152 and is spaced from the first groove 154, the second silicon photonics chip 153 is provided with a second light processing part 157, the second light processing part 157 corresponds to the light guiding hole 156, and the second silicon photonics chip 153 is used for blocking the light guiding hole 156 and the filter chip 130 and forming a functional chamber around the filter chip 130. The first silicon photonic chip 152 and the second silicon photonic chip 153 may be prepared in advance, where the first groove 154 on the first silicon photonic chip 152 may be formed by etching on a silicon wafer, and the second silicon photonic chip 130 and the filter chip 130 may be accommodated in the first groove 154, thereby realizing stack coverage, reducing the package size, and helping to improve the package integration level.
It should be noted that, in the present embodiment, the transparent adhesive layer 170 may be made of epoxy resin or high molecular polymer, which can ensure that the light emitted from the first light processing portion 151 and the second light processing portion 157 is almost emitted from the light transmitting groove 191 without damage. And the surface of the transparent adhesive layer is hemispherical, so that the laser focusing characteristic of the light treatment part can be improved, the penetrability of laser is improved, and the propagation efficiency of the laser is improved.
Note that, in this embodiment, the first silicon photonics chip 152 and the second silicon photonics chip 153 may be a detector, a laser radar, a range finder, a receiver, or the like, which is not limited herein. And the size range of the light-transmitting groove 191 on the plastic package body 190 needs to cover the corresponding areas of the first light processing part 151 and the second light processing part 157, so as to ensure that the first light processing part 151 and the second light processing part 157 can emit light outwards from the light-transmitting groove 191. In addition, the light emitted from the second light processing portion 157 may be emitted outside through the light guide hole 156, and the size of the light guide hole 156 should be larger than that of the second light processing portion 157, so as to ensure that the second light processing portion 157 can be emitted smoothly. The design of the light guide hole 156 also enables the implementation of a multi-silicon photonic chip stack design, thereby enabling the integration of more functional silicon photonic chips.
In this embodiment, the second silicon photonics chip 153 is attached to the substrate 110, and the second silicon photonics chip 153 has a second groove 155 with an opening facing the substrate 110, the filter chip 130 is accommodated in the second groove 155, the second silicon photonics chip 153 and the substrate 110 enclose a functional chamber together, the second silicon photonics chip 153 is electrically connected with the substrate 110, and the first silicon photonics chip 152 is electrically connected with the substrate 110. Specifically, the second silicon photonics chip 153 may be prepared in advance, and the second groove 155 on the second silicon photonics chip 153 may be formed by etching on the silicon wafer.
In the actual mounting, the second silicon photonics chip 153 may be first mounted, the filter chip 130 may be covered by the second groove 155, the first silicon photonics chip 152 may be mounted, and the second silicon photonics chip 153 and the filter chip 130 may be covered by the first groove 154.
In this embodiment, in order to ensure the tightness of the functional cavity, after the second silicon photonic chip 153 is mounted, a sealant layer 158 may be formed by dispensing glue around the second silicon photonic chip 153, and the sealant layer 158 may realize the sealing connection between the second silicon photonic chip 153 and the substrate 110.
It should be noted that, in the present embodiment, the light guiding hole 156 is connected to the first groove 154, and when the transparent glue layer 170 is formed, the flowing glue can enter the first groove 154 along the light guiding hole 156 and wrap around the second silicon photonics chip 153, so as to achieve encapsulation and protection.
In the present embodiment, the side of the first silicon photonics chip 152 away from the substrate 110 is further provided with a first connection line 171, the first connection line 171 is connected to the substrate 110, and the side of the second silicon photonics chip 153 away from the substrate 110 is provided with a second connection line 173, the second connection line 173 is connected to the substrate 110. Specifically, through the wire bonding process, electrical connection between the first silicon photonics and the substrate 110 may be achieved through the first connection wire 171, and electrical connection between the second silicon photonics chip 153 and the substrate 110 may be achieved through the second connection wire 173. It should be noted that, in the present embodiment, the first connection wire 171 is located outside the first silicon photonics chip 152, and the transparent adhesive layer 170 is coated outside the first connection wire 171 to protect the first connection wire 171. The second connection wire 173 is located in the first groove 154 and outside the second silicon photonics chip 153, and the transparent glue layer 170 in the first groove 154 can cover the second connection wire 173, thereby protecting the second connection wire 173.
The embodiment also provides a method for preparing the silicon photon packaging structure 100, which is used for preparing the silicon photon packaging structure 100, wherein the method for preparing comprises the following steps:
s1: a filter chip 130 is mounted on the substrate 110.
Specifically, referring to fig. 2, the filter chip 130 may be mounted on the substrate 110 using a flip-chip process and electrically connected to the substrate 110, and the filter chip 130 has a transduction region on a bottom side thereof, which faces the substrate 110 and is spaced apart from the substrate 110. The filter chip 130 may be a semiconductor device such as a silicon microphone chip or a gyroscope sensor, which needs to have a cavity structure.
In actual mounting, a substrate 110 may be taken, and the substrate 110 may be a ceramic substrate, a lead frame, a PCB board, or the like, then the filter chip 130 is mounted on the substrate 110 by using a flip-chip process, and the bottom solder bump of the filter chip 130 is fixed on the substrate 110 by using a reflow soldering process.
S2: a silicon photonics module 150 is mounted on the substrate 110.
Specifically, the silicon photonics module 150 is covered outside the filter chip 130 and forms a functional cavity around the filter chip 130; referring to fig. 3, the second silicon photonic chip 153 may be first mounted and then the first silicon photonic chip 152 may be mounted, in actual mounting, the second silicon photonic chip 153 may be covered on the filter chip 130 after the mounting of the filter chip 130 is completed, the second groove 155 encloses the filter chip 130 and forms a functional chamber, wherein the second silicon photonic chip 153 may be fixed on the substrate 110 using a glue film and is fixed using a baking process, then a sealant is filled around the second silicon photonic chip 153, and a sealant layer 158 is formed after curing, and the sealant layer 158 may seal an inner region of the second silicon photonic chip 153, thereby forming a functional chamber around the filter chip 130. After the sealant is cured, the second connection line 173 may be formed by wire bonding, one end of the second connection line 173 is connected to a pad on the second silicon photonics chip 153, and the other end is connected to a pad on the substrate 110, to achieve electrical connection between the second silicon photonics chip 153 and the substrate 110.
Referring to fig. 4, after the mounting of the second silicon photonic chip 153 is completed, the first silicon photonic chip 152 may be covered on the second silicon photonic chip 153, wherein the first silicon photonic chip 152 may be fixed on the substrate 110 using a glue film and fixed using a baking process, and then the first connection line 171 is formed again using a wire bonding process to achieve electrical connection between the first silicon photonic chip 152 and the substrate 110.
It should be noted that, before step S2 is performed, the first silicon photonic chip 152 and the second silicon photonic chip 153 may be prepared in advance, where the first silicon photonic chip 152 and the second silicon photonic chip 153 are similar in shape and different in size, and the preparation process of the first silicon photonic chip 152 is described herein:
referring to fig. 8, a silicon wafer or SOI wafer is first used to fabricate the first optical processing unit 151 on the wafer surface, the optical processing unit or detector is fabricated using III-V (e.g., inP) or VI-group Ge, and then the electrode formation pads are completed on the wafer surface. Referring to fig. 9, a carrier is then taken, a UV glue layer is coated on the surface of the carrier, and the carrier is cured by UV (ultraviolet) or thermally cured to serve as a separation layer formed later, and then the back surface of the wafer is attached to the glue layer to fix the wafer. Referring next to fig. 10, a first recess 154 in the shape of a semicircle is formed on the back side of the wafer using a chemical etching or dry etching process, and a light guide opening 156 is formed through the wafer. Referring again to fig. 11, the wafer is de-bonded by again irradiating UV light on the back side of the carrier, removing the carrier, and finally dicing the wafer into individual chips by a dicing process, thereby preparing the first silicon photonic chips 152.
S3: a transparent glue layer 170 is dispensed on the substrate 110.
The transparent glue layer 170 is coated outside the silicon photonic module 150, specifically referring to fig. 5, a dispensing process may be used to cover the transparent glue layer 170 on the first silicon photonic chip 152, where the transparent glue layer 170 needs to cover the first connection wire 171 on the first silicon photonic chip 152, and the glue may enter into the first groove 154 through the light guide through hole, so as to cover the second silicon photonic chip 153, thereby realizing filling. In addition, the transparent adhesive layer 170 may be cured into a hemispherical structure at the time of curing, thereby forming a hemispherical transparent lens, which can improve the penetrability and propagation efficiency of the first and second light processing sections 151 and 157.
S4: a molding body 190 is formed by molding on the substrate 110.
The plastic package body 190 is coated outside the transparent adhesive layer 170, specifically, referring to fig. 6, a plastic package process may be used to cover the connection structure with plastic package material, so as to play a role in protection.
S5: a light transmitting groove 191 is formed on the molding body 190 by grooving.
Specifically, referring to fig. 7 in combination, the light-transmitting groove 191 extends to the transparent adhesive layer 170 and is disposed corresponding to the first light processing portion 151, and the first light processing portion 151 is configured to emit light outwards through the transparent adhesive layer 170. In practical preparation, a laser grooving process may be used to form a light-transmitting groove 191 on the plastic package body 190, where the light-transmitting groove 191 extends to the transparent adhesive layer 170 and exposes the transparent adhesive layer 170. After the slotting, the particles generated during the laser slotting can be taken out by a water washing process, and the first and second light treatment portions 151 and 157 can be protected by the arrangement of the transparent adhesive layer 170, and the water washing process can be realized.
Finally, a dicing process may be utilized to cut along the dicing lanes of the substrate 110 to form individual products. Of course, the optical fiber array unit may be mounted above the groove and then cut, which is not particularly limited herein.
In summary, the present embodiment provides a silicon photonic package structure 100 and a method for manufacturing the same, in which a filter chip 130 is mounted on a substrate 110, and meanwhile, a silicon photonic module 150 is mounted outside the filter chip 130, so that a functional cavity is formed around the filter chip 130, then, a transparent adhesive layer 170 is arranged outside the silicon photonic module 150, and finally, a plastic package body 190 is arranged outside the transparent adhesive layer 170, wherein a first light processing portion 151 is disposed on the silicon photonic module 150, the transparent adhesive layer 170 is coated outside the first light processing portion 151, and when a light transmission groove 191 is formed by slotting, the structure of the light processing portion is not affected by the blocking of the transparent adhesive layer 170, and meanwhile, residual particles can be removed by a water washing process, and light emitted by the first light processing portion 151 can be emitted outwards through the light transmission groove 191 after passing through the transparent adhesive layer 170, so as to ensure the normal light emission. Compared with the prior art, the silicon photon packaging structure 100 and the preparation method thereof provided by the embodiment realize the isolation of the light processing part from the outside through the transparent adhesive layer, avoid the influence of the slotting or cleaning process on the light processing part, ensure the normal performance of the device, and ensure the normal light emission of the light processing part. Meanwhile, by improving the structures of the first silicon photonic chip 152 and the second silicon photonic chip 153, stacking of the silicon photonic chips is realized, and packaging integration level is improved.
Second embodiment
Referring to fig. 12, the present embodiment provides a silicon photonic package structure 100, whose basic structure and principle and technical effects are the same as those of the first embodiment, and for brevity, reference is made to the corresponding contents of the first embodiment where the description of the embodiment is not mentioned. The present embodiment is different from the first embodiment in the arrangement of the second silicon photonic chip 153.
In this embodiment, the second silicon photonic chip 153 is attached to the first silicon photonic chip 152 and is attached to the inner wall of the first groove 154 far away from the substrate 110, and the first silicon photonic chip 152 is plugged at the light guiding opening 156, the first silicon photonic chip 152, the second silicon photonic chip 153 and the substrate 110 enclose a functional chamber together, the first silicon photonic chip 152 is electrically connected with the second silicon photonic chip 153, and the second silicon photonic chip 153 is electrically connected with the substrate 110. Specifically, the second silicon photonic chip 153 is inversely mounted on the first silicon photonic chip 152 and electrically connected to the first silicon photonic chip 152, and the second light processing portion 157 is disposed on a side of the second silicon photonic chip 153 away from the substrate 110 and corresponding to the light guiding hole 156, so that light is smoothly emitted.
In this embodiment, the second silicon photonic chip 153 has a second groove 155 with an opening facing away from the substrate 110, the second groove 155 communicates with the light guiding hole 156, and an inner wall of the second groove 155 is an arc surface, and the second light processing portion 157 is disposed at a bottom wall center of the second groove 155. Specifically, the opening of the second groove 155 faces upwards and corresponds to the light guiding opening, and the inner wall of the second groove 155 can be preferably hemispherical, so that light can be converged at the center point of the spherical structure, namely, the second light processing portion 157 corresponds to the focusing point of the spherical surface, the laser focusing characteristic of the light processing portion is improved, the light emitting intensity of the second light processing portion 157 is ensured, and the penetrability and the propagation efficiency of laser are improved.
Preferably, the inner wall of the second groove 155 may be coated with a reflective material, such as silver or aluminum, to further improve focusing characteristics of the laser and ensure the light output intensity of the second light processing part 157.
In this embodiment, the first silicon photonics chip 152 is further provided with a conductive pillar 159, and the second silicon photonics chip 153 is provided with a second connection wire 173 on a side close to the substrate 110, and the second connection wire 173 is connected to the conductive pillar 159 so as to electrically connect the second silicon photonics chip 153 to the first silicon photonics chip 152. Specifically, the conductive pillars 159 may be formed together when the first silicon photonics chip 152 is fabricated, and by providing the conductive pillars 159, the second silicon photonics chip 153 can be electrically connected to the first silicon photonics chip 152 through the second connection lines 173 and the conductive pillars 159.
It should be noted that, in the present embodiment, the second silicon photonic chip 153 is spaced from the filter chip 130, and the second silicon photonic chip 153 can be plugged at the light guiding hole 156, so that most of the regions in the first groove 154 can form functional chambers, which greatly improves the volume of the functional chambers, thereby being beneficial to improving the performance of the filter chip 130.
It should be noted that, in the present embodiment, since the second silicon photonic chip 153 and the first silicon photonic chip 152 are connected by the second connection line 173, the second silicon photonic chip 153 and the first silicon photonic chip 152 may be first connected in place during the preparation process, and then the first silicon photonic chip 152 may be attached to the substrate 110.
Third embodiment
Referring to fig. 13, the present embodiment provides a silicon photonic package structure 100, whose basic structure and principle and technical effects are the same as those of the first embodiment, and for brevity, reference is made to the corresponding contents of the first embodiment where the description of the embodiment is not mentioned.
In this embodiment, the light-transmitting groove 191 is further provided with a blocking wall 175, and the blocking wall 175 is embedded in the transparent adhesive layer and is located between the first light processing portion 151 and the second light processing portion 157. Specifically, the blocking wall 175 is located at the middle position of the light-transmitting groove 191, thereby dividing the light-transmitting groove 191 into two groove partitions, and being capable of blocking light propagation between the first light processing part 151 and the second light processing part 157, avoiding mutual influence between the first light processing part 151 and the second light processing part 157, realizing light processing part isolation, thereby realizing light processing part functions of various silicon light chips. For example, the first silicon photonic chip 152 may be a detector, and the second silicon photonic chip 153 may be a lidar, which transmit lasers of different wavelengths, so as to avoid mutual interference. Alternatively, the first silicon photonics chip 152 and the second silicon photonics chip 153 may be TOF (time of flight) flying ranging structures, wherein the first silicon photonics chip 152 is a transmitting end and the second silicon photonics chip 153 is a receiving end, so as to realize ranging.
In the present embodiment, the distance H between the blocking wall 175 and the first silicon photonic chip 152 is smaller than the emission wavelengths of the first and second light processing sections 151 and 157. For example, the first light processing part 151 may emit red laser light having a wavelength of 625nm to 740nm, and then a distance H between the blocking wall 175 and the first silicon photonic chip 152 may be less than 500nm here to better block crosstalk between the first light processing part 151 and the second light processing part 157. It should be noted that, herein, the distance H between the blocking wall 175 and the first silicon photonic chip 152 refers to the distance between the bottom end of the blocking wall 175 embedded in the transparent glue layer and the surface of the first silicon photonic chip 152.
Fourth embodiment
Referring to fig. 14, the present embodiment provides a silicon photonic package structure 100, whose basic structure and principle and technical effects are the same as those of the second embodiment, and for brevity, reference is made to the corresponding contents of the second embodiment where the description of the embodiment is not mentioned.
In this embodiment, the first silicon photonic chip 152 is further provided with a shielding metal column 177, and the shielding metal column 177 is embedded in the transparent adhesive layer and extends to the edge of the light-transmitting groove 191. Specifically, before the transparent glue layer 170 is formed, a metal pillar may be formed on the surface of the first silicon photonics chip 152 using a wire bonding process, or after the transparent glue layer 170 is formed, a metal pillar may be formed on the surface of the transparent glue layer 170 by slot plating.
It should be noted that, the shielding metal column 177 may be a copper column, which may play a role in heat dissipation of the light processing portion, so as to improve the overall heat dissipation effect. In addition, when the light-transmitting groove 191 is formed by laser grooving, the shielding metal column 177 can also serve as a stop layer, so that the grooving depth is controlled, and the influence of the grooving too deep on the light treatment part is avoided.
In this embodiment, the shielding metal columns 177 may be formed on the surface of the first silicon photonic chip 152 in a fence shape, and the range of the shielding metal columns 177 is consistent with the range of the light-transmitting grooves 191, and the light-transmitting grooves 191 may also be formed along the shielding metal columns 177 in the slotting.
Further, the shielding metal column 177 in the embodiment can also be used as a side wall shielding layer, which can avoid refraction or scattering phenomena generated by light emitted by the first light processing portion 151 or the second light processing portion 157 propagating along the side surface of the transparent adhesive layer 170, so as to greatly improve the transmission efficiency thereof. In addition, the shielding metal column 177 may also serve as an electrostatic dispersing end, so as to disperse static electricity around the periphery of the light guide hole 156, thereby preventing the first and second light processing parts 151 and 157 from being damaged due to the influence of static electricity.
Referring to fig. 15, in other preferred embodiments of the present invention, the shielding metal column 177 may be disposed between the first light processing section 151 and the second light processing section 157 at the same time, so as to function as a mutual separation. It should be noted that, in this embodiment, the shielding metal pillar 177 may be further connected to the conductive pillar 159 on the second silicon photonics chip 153, and grounded, so as to further realize the static electricity dissipation around the functional cavity.
Fifth embodiment
The basic structure and principle of the silicon photonic package structure 100 are the same as those of the fourth embodiment, and for brevity, reference is made to the corresponding parts of the fourth embodiment.
Referring to fig. 16, in the present embodiment, an optical fiber array unit 200 is further disposed on the outer side of the silicon photonic package structure 100, and the optical fiber array unit 200 is disposed on the outer side of the plastic package body 190 and corresponds to the light transmission groove 191. Specifically, the bottom side of the optical fiber array unit 200 is further provided with a supporting metal column 210, the plastic package body 190 is further provided with a slot, conductive glue is filled in the slot, the supporting metal column 210 is inserted into the slot and is adhered and fixed through the conductive glue, meanwhile, the supporting metal column 210 extends to the shielding metal column 177 and can be in electrical contact with the shielding metal column 177, and through the arrangement of the supporting metal column 210, on one hand, the optical fiber array unit 200 can be supported, on the other hand, static electricity on the optical fiber array unit 200 can be introduced into the shielding metal column 177 for dissipation, and the static electricity eliminating capability of the optical fiber array unit is improved.
Referring to fig. 17, in other preferred embodiments of the present invention, the optical fiber array unit 200 may be further inserted into the light-transmitting groove 191 from the side of the plastic package body 190, so that the top end of the light-transmitting groove 191 can be sealed, and further, a better protection effect is obtained.
The above description is only of the preferred embodiments of the present invention and is not intended to limit the present invention, but various modifications and variations can be made to the present invention by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (12)
1. A silicon photonic package structure, comprising:
a substrate;
a filter chip mounted on the substrate;
the silicon photonics module is mounted on the substrate, is covered outside the filter chip and forms a functional cavity around the filter chip;
a transparent adhesive layer arranged on the substrate and coated outside the silicon photon module;
the plastic package body is arranged on the substrate and coated outside the transparent adhesive layer;
the filter chip is electrically connected with the substrate, the silicon photonics module is electrically connected with the substrate, a first light treatment part is arranged on the silicon photonics module, a light transmission groove is formed in the plastic package body, the light transmission groove extends to the transparent glue layer and is correspondingly arranged with the first light treatment part, and the first light treatment part is used for outwards emitting light through the transparent glue layer.
2. The silicon photonic package structure according to claim 1, wherein the silicon photonic module comprises a first silicon photonic chip and a second silicon photonic chip, the first silicon photonic chip is mounted on the substrate and has a first groove with an opening facing the substrate, the second silicon photonic chip is accommodated in the first groove, a light guide opening corresponding to the light transmission groove is further provided through the first silicon photonic chip, the light guide opening penetrates to the first groove, the first light processing part is provided on the first silicon photonic chip and is spaced from the first groove, the second silicon photonic chip is provided with a second light processing part corresponding to the light guide opening, and the second silicon photonic chip is used for blocking the light guide opening and the filter chip and forming the functional chamber around the filter chip.
3. The silicon photonics package structure of claim 2 wherein the second silicon photonics chip is affixed to the substrate and has a second recess opening toward the substrate, the filter chip is received in the second recess, the second silicon photonics chip and the substrate together enclose the functional cavity, the second silicon photonics chip is electrically connected to the substrate, and the first silicon photonics chip is electrically connected to the substrate.
4. A silicon photonic package structure as defined in claim 3 wherein the side of the first silicon photonic chip remote from the substrate is further provided with a first connection line connected to the substrate, and the side of the second silicon photonic chip remote from the substrate is provided with a second connection line connected to the substrate.
5. The silicon photonic package structure of claim 2, wherein the second silicon photonic chip is attached to the first silicon photonic chip and is attached to an inner wall of the first groove away from the substrate, the first silicon photonic chip is plugged at the light guide opening, the first silicon photonic chip, the second silicon photonic chip and the substrate jointly enclose the functional chamber, the first silicon photonic chip is electrically connected with the second silicon photonic chip, and the second silicon photonic chip is electrically connected with the substrate.
6. The silicon photonic package structure of claim 5, wherein the second silicon photonic chip has a second groove with an opening facing away from the substrate, the second groove is in communication with the light guiding opening, and an inner wall of the second groove is an arc surface, and the second light processing portion is disposed at a center of a bottom wall of the second groove.
7. The silicon photonics package structure of claim 5 wherein the first silicon photonics chip is further provided with a conductive post and the second silicon photonics chip is provided with a second connection line on a side of the second silicon photonics chip adjacent to the substrate, the second connection line being connected to the conductive post to electrically connect the second silicon photonics chip to the first silicon photonics chip.
8. The silicon photonic package structure as set forth in claim 3 or 5, wherein a blocking wall is further disposed in the light-transmitting groove, and the blocking wall is embedded in the transparent adhesive layer and is located between the first light processing portion and the second light processing portion.
9. The silicon photonic package structure of claim 8, wherein a distance H between the blocking wall and the first silicon photonic chip is less than emission wavelengths of the first and second light processing portions.
10. The silicon photonics package of claim 3 or 5 wherein a shielding metal post is further disposed on the first silicon photonics chip, the shielding metal post is embedded in the transparent glue layer and extends to an edge position of the light-transmitting groove.
11. The silicon photonics package of claim 3 or claim 5 wherein the surface of the transparent glue layer is hemispherical.
12. A method for preparing a silicon photonic package structure according to claim 1, wherein the method comprises:
attaching a filter chip on a substrate;
a silicon photonics module is mounted on a substrate, the silicon photonics module is covered outside the filter chip, and a functional cavity is formed around the filter chip;
dispensing on the substrate to form a transparent adhesive layer, wherein the transparent adhesive layer is coated outside the silicon photon module;
forming a plastic package body on the substrate in a plastic package mode, wherein the plastic package body is coated outside the transparent adhesive layer;
slotting on the plastic package body to form a light-transmitting groove;
the filter chip is electrically connected with the substrate, the silicon photonics module is electrically connected with the substrate, a first light processing part is arranged on the silicon photonics module, the light-transmitting groove extends to the transparent adhesive layer and is correspondingly arranged with the first light processing part, and the first light processing part is used for emitting light outwards through the transparent adhesive layer.
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