CN116215081A - Microfluidic device, manufacturing method and application thereof - Google Patents

Microfluidic device, manufacturing method and application thereof Download PDF

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Publication number
CN116215081A
CN116215081A CN202211644218.1A CN202211644218A CN116215081A CN 116215081 A CN116215081 A CN 116215081A CN 202211644218 A CN202211644218 A CN 202211644218A CN 116215081 A CN116215081 A CN 116215081A
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manufacturing
microfluidic device
layer
forming
nozzle
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CN202211644218.1A
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Chinese (zh)
Inventor
陈诚
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Wuhan Agile Microelectronics Co ltd
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Wuhan Agile Microelectronics Co ltd
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Priority to CN202211644218.1A priority Critical patent/CN116215081A/en
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/16—Production of nozzles
    • B41J2/1607—Production of print heads with piezoelectric elements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/16—Production of nozzles
    • B41J2/162—Manufacturing of the nozzle plates
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/16—Production of nozzles
    • B41J2/1621—Manufacturing processes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Particle Formation And Scattering Control In Inkjet Printers (AREA)

Abstract

The invention provides a microfluidic device, a manufacturing method and application thereof. The manufacturing method of the microfluidic device comprises the following steps: forming a heat insulation layer on a wafer substrate, forming a metal wire and a preset slot structure on the heat insulation layer, forming a thin film resistor on the preset slot structure, forming a passivation layer on a thin film resistor area and the metal wire layer, forming a fluid containing cavity aiming at the preset slot structure area, manufacturing a hydrophilic film on the inner wall of the cavity, manufacturing a nozzle by adopting a process method of a photosensitive dry film, and forming an integrated device with the resistor, the cavity and the nozzle manufactured on the same chip. The invention improves the chip integration level of the microfluidic device, simplifies the process flow, reduces the manufacturing cost, and improves the consistency, stability and reliability of the printing head chip.

Description

Microfluidic device, manufacturing method and application thereof
Technical Field
The invention relates to the technical field of microfluidic electronic components, in particular to a microfluidic component, a manufacturing method and application thereof.
Background
At the heart of an inkjet printer is a large number of high precision miniature inkjet nozzles. Several different techniques for precision microfabrication of inkjet nozzles are used in commercial production, including electroforming, laser ablation, anisotropic etching, and photolithography. For each color of ink, all of the nozzles on the carriage are typically formed in a single manufacturing step to precisely control their relative positions, which is important to achieve uniform printing without streaks. In some cases, all of the nozzles for each color ink are formed together in one step. The inkjet nozzles are all mounted on a moving carriage assembly that moves back and forth at high speeds (typically >1 m/s). The nozzles are mounted at a position of about 1 mm from the paper, and the ink ejection speed is in the range of 5 to 10 meters per second. Ink is ejected from the nozzle by applying a pressure pulse to the fluid ink in a supply line upstream of the nozzle.
There are two methods of generating pressure pulses by which ink is ejected from a nozzle, depending mainly on the pressure pulses: thermal bubble methods and piezoelectric methods. Wherein in thermal bubble technology a thin film resistive metal layer having a thickness of less than 1 micron is used to form a small heater in the ink channel walls leading to each nozzle. Low resistance metal conductors are connected to both sides of the heating resistor through which current pulses flow for a duration of about 1 microsecond. The magnitude of this current is intended to heat the resistance sufficiently to boil the ink. A thin layer of ink closest to the resistor will explosively boil, forming a vapor bubble, and will expand in volume by a factor of about one thousand. This volume expansion creates a pressure pulse in the fluid, causing the ink in the nozzle (downstream of the heater) to be ejected toward the paper. After a few microseconds, the vapor bubble cools and breaks. The surface tension of the ink meniscus in the nozzle then draws more ink from the reservoir, refilling the nozzle in preparation for the next drop ejection.
In existing conventional inkjet printhead chips, the resistors and cavities are fabricated on a wafer substrate and the nozzles are fabricated on a single nozzle plate (NozzlePlate). After the two are manufactured separately, the wafer and the nozzle plate are combined together by a bonding method. The method has the defects of complex process, low integration level, high manufacturing cost and the like. Meanwhile, in the bonding process of the wafer and the nozzle, errors exist in alignment of the nozzle and the resistor, so that the consistency and stability of the device are poor, and the printing quality is affected.
Disclosure of Invention
Based on the method, the invention provides a novel manufacturing method of the microfluidic device, components such as a resistor, a cavity, a nozzle and the like in the microfluidic device are integrally manufactured on the same chip, the integration level of the device is improved, the process is simplified, the cost is reduced, and the consistency and the stability of the device are improved.
The invention adopts the following technical scheme:
the present invention provides a microfluidic device comprising: a thin film resistor integrated on the wafer substrate, a fluid containment chamber, and a nozzle; the fluid containing cavity is provided with a hydrophilic film layer, and the wall of the fluid containing cavity is provided with a film resistor for heating fluid; the nozzle is made of photosensitive dry films and is connected with the fluid containing cavity.
The invention also provides a manufacturing method of the microfluidic device, which comprises the following steps: forming a heat insulation layer on a wafer substrate, and forming a metal wire and a preset slot structure on the heat insulation layer; forming a thin film resistor on the preset slot structure; forming a passivation layer on the thin film resistor region and the metal wire layer; forming a fluid accommodating cavity aiming at a preset slotted hole structure area; forming a hydrophilic film on an inner wall of the fluid-receiving chamber; manufacturing a photosensitive dry film cap layer and a nozzle corresponding to the fluid accommodating cavity for ejecting fluid; the resistor, the cavity and the nozzle are sequentially manufactured on the wafer to form an integrated chip.
In some of these embodiments, the material of the insulating layer is preferably at least one selected from the group consisting of silicon oxide, silicon nitride, and silicon carbide.
In some embodiments, the thin film resistor is made of Ni-Co resistor film, ta resistor film, si resistor film, cermet resistor film, au-Cr resistor film, ni-P resistor film, etc., preferably TaAl, taN, niCr, taSiO 2 At least one of them.
In some of these embodiments, the passivation layer is made of a material preferably selected from at least one of silicon oxide, silicon nitride, and silicon carbide.
In some embodiments, the fluid containing cavity is primarily surrounded by a photoresist layer and a sheet resistor.
In some of these embodiments, the hydrophilic film is preferably made of at least one material selected from chromium, aluminum, zinc, chromium oxides, aluminum oxides, zinc oxides, chromium hydroxides, aluminum hydroxides, zinc hydroxides.
In some embodiments, the cap nozzle is a V-shaped opening structure formed by compounding multiple layers of photosensitive dry films. The photosensitive dry film is at least one selected from a photopolymerization type photosensitive dry film and a photodecomposition type photosensitive dry film. The multi-layer photosensitive dry film comprises a photopolymerization type and a photodecomposition type, and can be two layers, three layers or multiple layers, so that the requirements of a device on the mechanical property of a cavity, the resolution of a nozzle, the shape of the nozzle and the like are met.
The invention also provides an ink jet nozzle for a printer, which is manufactured by adopting the manufacturing method of the microfluidic device.
Compared with the prior art, the invention has the beneficial effects that:
the invention provides a new manufacturing method, which integrates the elements such as a resistor, a cavity, a nozzle and the like in the microfluidic device on the same chip, improves the chip integration level of the microfluidic device, simplifies the process flow, reduces the manufacturing cost, and improves the consistency, the stability and the reliability of the printing head chip.
Drawings
Fig. 1 is a schematic diagram of the structural layout of a substrate and an insulating layer.
Fig. 2 is a schematic diagram of a manufacturing process of the metal wire.
Fig. 3 is a schematic diagram of a manufacturing flow of a thin film resistor.
Fig. 4 is a schematic structural layout of a passivation layer.
Fig. 5 is a schematic diagram of a manufacturing flow of the cavity.
FIG. 6 is a schematic structural layout of a hydrophilic film.
Fig. 7 is a schematic view of a manufacturing flow of the cap and the nozzle.
Fig. 8 is a schematic structural view of a cap and nozzle formed of a multi-layered photosensitive dry film.
Fig. 9 is a schematic structural view of a wafer.
Detailed Description
The present invention will be described in further detail with reference to specific examples so as to more clearly understand the present invention by those skilled in the art.
The following examples are given for illustration of the invention only and are not intended to limit the scope of the invention. All other embodiments obtained by those skilled in the art without creative efforts are within the protection scope of the present invention based on the specific embodiments of the present invention.
In the examples of the present invention, all raw material components are commercially available products well known to those skilled in the art unless specified otherwise; in the embodiments of the present invention, unless specifically indicated, all technical means used are conventional means well known to those skilled in the art.
The technical conception of the invention is to provide a manufacturing method of a microfluidic device, which comprises the following steps:
s1, providing a substrate.
In this step, the substrate is preferably a substrate made of silicon-containing material, for example, silicon, sapphire, glass, or the like. The size can be 3-12 inches (or 75-300 mm) and the thickness is 500-1000 μm.
S2, forming a heat-insulating layer on the substrate.
As shown in fig. 1, a heat insulating layer is formed on a substrate. In this step, the material of the insulating layer is preferably at least one of silicon oxide, silicon nitride, and silicon carbide, and the thickness is 1 to 5. Mu.m.
Wherein, siO is prepared 2 The film is prepared by chemical vapor deposition, thermal oxidation, magnetron sputtering, ion beam sputtering, etc. SiO (SiO) 2 The film has good insulating property, good stability, firm film layer and long-term use temperature of more than 1000 ℃.
The preparation method of the silicon nitride film can be a Physical Vapor Deposition (PVD), a Chemical Vapor Deposition (CVD), a thermal reaction method and the like.
Silicon carbide (SiC) has excellent properties of high hardness, good thermal stability, stable structure, high thermal conductivity and the like, and can be prepared into a silicon carbide film by adopting a physical vapor deposition method and a chemical vapor deposition method.
And S3, forming a metal wire on the heat-insulating layer.
As shown in fig. 2, in this step, a metal layer is first formed on the insulating layer by evaporation or sputtering, and the thickness of the metal material is preferably from 0.1 to 2um, such as Al, cu, alCu. And forming a photoresist layer on the metal layer, and adopting photoetching processes including gluing, aligning, exposing, developing and the like. Then, metal etching, photoresist removing, cleaning and the like are carried out to form a metal layer with a preset slot structure.
Alternatively, the Metal wire may be formed by a process called "Metal Lift-off".
S4, forming a thin film resistor on the preset slot structure.
As shown in fig. 3, a resistive material layer is formed on a metal layer and a preset slot structure by a sputtering method, and then a thin film resistor region for the preset slot structure is formed by a photolithography process and an etching process, so as to spray fluid by using a thermal bubble principle.
In this step, the material for manufacturing the thin film resistor is preferably TaAl, taN, niCr, taSiO 2 And the like, the thickness of the thin film resistor is preferably 10 to 1000nm.
S5, forming a passivation layer on the thin film resistor area and the metal wire layer.
As shown in fig. 4, a passivation layer is formed on the thin film resistor region and the metal wire layer.
In this step, the passivation layer is preferably made of silicon oxide, silicon nitride, silicon carbide, or the like, and the thickness is preferably 100 to 1000nm.
S6, forming a fluid accommodating cavity aiming at the preset slotted hole structure area.
In this step, a photoresist, such as SU-8 series photoresist, is selected for use in fabricating the device structure. The invention adopts epoxy resin-based photoresist and is used for manufacturing micro-electro-mechanical systems (MEMS) and other microelectronic devices. The viscosity range allows a single-step coating with a film thickness of between 4 and 120 μm. The glue coating speed is 200-5000 rpm, and the time is 5-30sec, which depends on the type and thickness of the photoresist.
As shown in fig. 5, the process steps include: and cleaning the surface of the passivation layer, and gluing to form a photoresist layer. Alignment, exposure dose and time are dependent on the type of photoresist, thickness and exposure equipment. Specific parameters the exposure matrix experiments were performed to optimize exposure dose and time. The exposed photoresist portions of the negative tone photoresist become insoluble to the photoresist developer and remain, while the unexposed portions of the photoresist are dissolved by the photoresist developer. Development, photoresist removal, curing and reflow (reflow), the development time is determined by parameters such as photoresist type, developer type, thickness of the photoresist, etc.
After the process is completed, the inner wall of the cavity is formed and consists of a passivation layer and the inner wall of photoresist.
S6, preparing a hydrophilic film on the inner wall of the cavity.
As shown in fig. 6, in this step, in order to ensure that the flow channel is smooth, continuous liquid supply, liquid injection frequency regulation and the like, a hydrophilic film layer needs to be added to the inner wall of the cavity, that is, the material of the wall surface is a substance with high surface energy, so that the interaction force between water molecules and material molecules is greater than the cohesive force between water molecules, and the surface of the material is fully wetted by water. The hydrophilic material may be a metal such as chromium (Cr), aluminum (Al), zinc (Zn), or an oxide or hydroxide thereof. The hydrophilic material may also be other materials such as glass, aluminum alloy, plastic, etc.
In order to make the cavity become hydrophilic, a layer of hydrophilic material film can be manufactured on the inner wall of the cavity. Taking Al as an example, the metal material can be prepared by Evaporation (Evaporation) and Sputtering (Sputtering) methods, and the thickness is 100-1000nm. The metal layers at other parts are removed through photoetching, etching and other process steps.
S7, manufacturing caps and nozzles of photosensitive dry film materials:
and manufacturing a photosensitive dry film as a cavity cover layer and manufacturing a nozzle. The preparation process flow specifically comprises film pasting, photomask calibration, exposure, development, cleaning and the like.
Fig. 7 (a) shows a film pasting step of spreading a photosensitive dry film on the surface of the front photoresist. Specifically, the following process parameters are optimized in the film pasting process: preheating temperature and time, pressing temperature, pressing roller temperature, film sticking pressure, film sticking speed, pressing time and the like.
Fig. 7 (b) shows the mask Alignment (Alignment) and Exposure (Exposure) steps. Specifically, mask alignment is performed after film lamination, and exposure is performed after alignment. The purpose of Alignment is to align the Alignment marks on the reticle with the marks on the wafer substrate to ensure that the nozzle position coincides with the heater position.
If the temperature of the photosensitive dry film before exposure is different from the room temperature, the dry film needs to be left to stand for about 15 to 30 minutes, and cooled to the room temperature. The specific exposure process parameters are adjusted and optimized according to the selected different dry film materials.
Fig. 7 (c) shows a development and cleaning step, i.e., dry film development and cleaning is performed to remove the unexposed dry film. The photosensitive dry film is negative photoresist, and after illumination, light curing reaction can be quickly carried out in an exposure area to become insoluble substances. And the portions not exposed to light can be removed by development.
A period of about 15-30 minutes is required for standing before development. The solvent for development and development parameters such as temperature, pressure, concentration, time and the like are adjusted according to the kind of dry film.
After cleaning, the remained photosensitive dry film forms a cavity cover layer, forms a cavity together with the film resistor, the hydrophilic film and the side photoresist at the bottom, and combines the photosensitive dry film above the cavity to form a nozzle.
The size of the nozzle may be between 5 and 100 μm depending on the application. Since the photosensitive dry film is a negative photoresist, a horn-shaped nozzle as shown in (c) of fig. 7 can be formed by controlling and optimizing the exposure process.
The size of the cavity and the nozzle are different according to the application of the device, and the corresponding photosensitive dry film is selected. For example, in applications where the cavity volume is required to be large, the thickness of the photosensitive dry film should be increased accordingly to ensure the mechanical performance requirements of the cavity. And an increase in the thickness of the photosensitive dry film may result in a decrease in resolution, affecting the minimum size and accuracy of the device. Therefore, the corresponding photosensitive dry film should be selected and the process should be optimized to achieve the desired device design index according to the specific application and design of the device.
The photosensitive dry film is generally composed of three parts of a polyethylene film, a photoresist film and a polyester film: a photosensitive layer, a carrier layer and a protective layer. The photosensitive layer is also called as a photoresist film, is the most important component of the photosensitive dry film, and the main component of the photosensitive layer is photosensitive material for lithography. When the photosensitive layer is composed of a polymer binder (alkali-soluble resin), the photosensitive layer is prepared by blending acrylic resin, methacrylic acid, butyl acrylate, ethyl acrylate and the like as main components. The main components of the photosensitive layer are glycerol propoxylate triacrylate, ethoxylated bisphenol A dimethacrylate, ethoxylated nonylphenol acrylate and the like; the thickness of the photosensitive layer is generally between 10 μm and 100. Mu.m. The carrier layer is a carrier of the photosensitive layer and is a polyester film, and is used for coating the mixed photosensitive material into a film, and the thickness is generally between 10 and 30 mu m; the protective layer of the photosensitive dry film is a polyethylene film, and has the main functions of isolating oxygen, layering and avoiding mechanical damage, and the thickness is generally between 10 and 40 mu m. The main technical indexes of the photosensitive dry film include resolution, etching resistance, chemical stability, adhesive force, mechanical property and the like, and the core performance of the photosensitive dry film in the device manufacturing process is determined.
Resolution affects the minimum size and accuracy of the device. Etch resistant lines and chemical stability affect the quality reliability of the device. Adhesion and mechanical properties affect the strength of the device. In addition, photosensitivity, developability and development resistance of the photosensitive dry film will affect the manufacturing process, efficiency and yield.
The photosensitive dry film is divided into two types: photopolymerizing type and photodecomposition type, the photopolymerizing type dry film is hardened by irradiation with light of a specific spectrum, and becomes water-insoluble from a water-soluble substance. Whereas the photodecomposition type is the opposite. The specific products and specifications vary widely. The photosensitive dry films of different materials and thicknesses have a great influence on strength and resolution.
For different applications, the corresponding photosensitive dry film is selected. To improve the mechanical properties of the chamber and the resolution of the nozzle, a two-layer or multi-layer structure may also be used.
As an example, fig. 8 shows a structure of a two-layer photosensitive dry film. The specific process flow is shown in (a) - (c) of fig. 7.
In general, resolution is inversely proportional to the film thickness, and the larger the film thickness, the worse the resolution. To obtain smaller nozzle sizes, a dry film of smaller thickness should be used.
The photosensitive dry film-1 and the photosensitive dry film-2 can be the same or different, and comprise film material types and material thicknesses. If the photo dry film-1 and the photo dry film-2 are the same material, the thickness of the photo dry film-2 should be smaller than that of the photo dry film-1 to make smaller nozzle sizes.
The final nozzle size is the upper opening size of the photosensitive dry film-2. The size of the lower opening of the photosensitive dry film-2 is equal to or larger than the size of the upper opening of the photosensitive dry film-2 to reduce the resistance when the liquid is ejected.
Three or more layers of photosensitive dry films can be adopted according to different requirements of application so as to manufacture the nozzle which meets the requirements of shape and size. The photosensitive dry films of the multiple layers can be the same or different in material type and thickness. If the photosensitive dry films of the layers are the same material, the thickness of the previous layer should generally be smaller than that of the previous layer to make smaller nozzle sizes.
The device manufactured by the method integrates the heater, the fluid container and the nozzle on the same chip, improves the integration level of the device, simplifies the manufacturing process and improves the stability and reliability of the device.
The method can be used for manufacturing various microfluidic devices and apparatuses. Can also be used for manufacturing ink-jet printing chips. Fig. 6-8 show a portion of an inkjet printing chip including a resistor, a fluid containing chamber, and a nozzle. All components are fabricated on the same chip. The shape, size, layout of the various components of the device shown in the figures are merely examples and are not intended to be limiting in any way.
Further, in the manufacture of the ink jet printing head chip, the ink jet printing device, including the resistor, the cavity, the runner, the nozzle and the like, and the CMOS control circuit for controlling the power supply are integrally manufactured on the same chip to form the fully integrated printing head chip, so that the integration level of the chip is further improved, the process flow is simplified, the manufacturing cost is reduced, and the consistency, the stability and the reliability of the printing head chip are improved.
The integrated printhead die shown are fabricated on a wafer, which may have a substrate size of 4-12 inches (100-300 mm). The finished wafer is shown in fig. 9. Each cell is a chip, and the chip can be square or rectangular. The number of devices per chip ranges from tens to hundreds, even thousands. The MEMS device and the printing head chip are manufactured by adopting the semiconductor process, so that the integration level, the reliability, the consistency and the uniformity of the chip can be improved, the manufacturing process is simplified, the cost is reduced, and the large-scale production and the application are facilitated.
It should be noted that the above examples are only for further illustrating and describing the technical solution of the present invention, and are not intended to limit the technical solution of the present invention, and the method of the present invention is only a preferred embodiment and is not intended to limit the scope of the present invention. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims (10)

1. A microfluidic device, comprising: a resistor, a fluid containing cavity and a nozzle integrally formed on the wafer substrate;
the fluid containing cavity is provided with a hydrophilic film layer, and the wall of the fluid containing cavity is provided with a film resistor for heating fluid;
the nozzle is made of photosensitive dry films and is connected with the fluid containing cavity.
2. A method of fabricating a microfluidic device according to claim 1, comprising the steps of:
forming a heat insulating layer on a wafer substrate;
forming a metal wire and a preset slot structure on the heat insulation layer;
forming a thin film resistor on the preset slot structure;
forming a passivation layer on the thin film resistor region and the metal wire layer;
forming a fluid accommodating cavity aiming at a preset slotted hole structure area;
forming a hydrophilic film on an inner wall of the fluid-receiving chamber;
manufacturing a photosensitive dry film cap layer and a nozzle corresponding to the fluid accommodating cavity for ejecting fluid;
an integrated chip is formed.
3. The method for manufacturing a microfluidic device according to claim 2, wherein the material of the insulating layer is at least one selected from silicon oxide, silicon nitride, and silicon carbide.
4. The method of fabricating a microfluidic device according to claim 2, wherein the material from which the thin film resistor is fabricated is selected from TaAl, taN, niCr, taSiO 2 At least one of them.
5. The method of manufacturing a microfluidic device according to claim 2, wherein the passivation layer is made of at least one material selected from the group consisting of silicon oxide, silicon nitride, and silicon carbide.
6. The method of manufacturing a microfluidic device according to claim 2, wherein the fluid containing cavity is mainly surrounded by a photoresist layer and a thin film resistor.
7. The method of manufacturing a microfluidic device according to claim 2, wherein the hydrophilic thin film is made of at least one material selected from the group consisting of chromium, aluminum, zinc, chromium oxides, aluminum oxides, zinc oxides, chromium hydroxides, aluminum hydroxides, and zinc hydroxides.
8. The method for manufacturing a microfluidic device according to claim 2, wherein the nozzle has a V-shaped opening structure formed by compounding a plurality of photosensitive dry films.
9. The method of manufacturing a microfluidic device according to claim 8, wherein the photosensitive dry film is at least one selected from a photopolymerizable photosensitive dry film and a photodecomposition photosensitive dry film.
10. An inkjet nozzle for a printer, wherein the inkjet nozzle for a printer is manufactured by the manufacturing method of the microfluidic device according to any one of claims 2 to 9.
CN202211644218.1A 2022-12-20 2022-12-20 Microfluidic device, manufacturing method and application thereof Pending CN116215081A (en)

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