CN116195075A - 图像显示装置的制造方法及图像显示装置 - Google Patents

图像显示装置的制造方法及图像显示装置 Download PDF

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Publication number
CN116195075A
CN116195075A CN202180059966.0A CN202180059966A CN116195075A CN 116195075 A CN116195075 A CN 116195075A CN 202180059966 A CN202180059966 A CN 202180059966A CN 116195075 A CN116195075 A CN 116195075A
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China
Prior art keywords
light emitting
insulating film
light
layer
image display
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Pending
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CN202180059966.0A
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English (en)
Chinese (zh)
Inventor
秋元肇
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Nichia Corp
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Nichia Corp
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Publication date
Application filed by Nichia Corp filed Critical Nichia Corp
Publication of CN116195075A publication Critical patent/CN116195075A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H10H20/8513—Wavelength conversion materials having two or more wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8515—Wavelength conversion means not being in contact with the bodies

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  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)
  • Led Device Packages (AREA)
CN202180059966.0A 2020-09-17 2021-09-03 图像显示装置的制造方法及图像显示装置 Pending CN116195075A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020156726 2020-09-17
JP2020-156726 2020-09-17
PCT/JP2021/032529 WO2022059528A1 (ja) 2020-09-17 2021-09-03 画像表示装置の製造方法および画像表示装置

Publications (1)

Publication Number Publication Date
CN116195075A true CN116195075A (zh) 2023-05-30

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CN202180059966.0A Pending CN116195075A (zh) 2020-09-17 2021-09-03 图像显示装置的制造方法及图像显示装置

Country Status (6)

Country Link
US (1) US20230215907A1 (https=)
EP (1) EP4216290A4 (https=)
JP (1) JP7669643B2 (https=)
CN (1) CN116195075A (https=)
TW (1) TWI882173B (https=)
WO (1) WO2022059528A1 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022113949A1 (ja) * 2020-11-25 2022-06-02 日亜化学工業株式会社 画像表示装置の製造方法および画像表示装置
US12074146B2 (en) * 2021-12-03 2024-08-27 Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Display panel and manufacturing method thereof
CN114203734B (zh) * 2021-12-11 2023-08-22 武汉华星光电半导体显示技术有限公司 显示面板及其制备方法
KR20250002105A (ko) * 2022-04-20 2025-01-07 도레이 카부시키가이샤 표시 장치
TWI865239B (zh) * 2023-12-11 2024-12-01 友達光電股份有限公司 顯示裝置

Citations (5)

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CN102576739A (zh) * 2009-11-27 2012-07-11 夏普株式会社 薄膜晶体管及其制造方法、半导体装置及其制造方法以及显示装置
CN102822734A (zh) * 2010-04-16 2012-12-12 夏普株式会社 电子基板的制造方法、液晶显示装置的制造方法、电子基板以及液晶显示装置
US20160240561A1 (en) * 2015-02-16 2016-08-18 Kabushiki Kaisha Toshiba Semiconductor light emitting device
US20200127173A1 (en) * 2016-03-18 2020-04-23 Lg Innotek Co., Ltd. Semiconductor device and display device including the same
CN111223885A (zh) * 2018-11-27 2020-06-02 三星电子株式会社 显示装置和制造其的方法

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JP2002141492A (ja) * 2000-10-31 2002-05-17 Canon Inc 発光ダイオードディスプレイパネル及びその製造方法
TWI505473B (zh) * 2005-01-28 2015-10-21 半導體能源研究所股份有限公司 半導體裝置，電子裝置，和半導體裝置的製造方法
JP4852322B2 (ja) * 2006-03-03 2012-01-11 ローム株式会社 窒化物半導体発光素子及びその製造方法
JP4481293B2 (ja) * 2006-12-22 2010-06-16 株式会社沖データ 発光表示装置
US20090078963A1 (en) * 2007-07-09 2009-03-26 Salah Khodja Nano-optoelectronic chip structure and method
US8455331B2 (en) * 2007-10-10 2013-06-04 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
JP2010219310A (ja) * 2009-03-17 2010-09-30 Sharp Corp 光デバイスおよび光デバイス構造
TWI552321B (zh) * 2014-09-30 2016-10-01 群創光電股份有限公司 顯示面板及顯示裝置
KR102300517B1 (ko) * 2014-10-17 2021-09-13 인텔 코포레이션 마이크로led 디스플레이 및 어셈블리
KR102631260B1 (ko) * 2016-04-08 2024-01-31 삼성디스플레이 주식회사 표시장치 및 표시장치 제조방법
US10962586B2 (en) * 2017-01-23 2021-03-30 Apple Inc. Light emitting diode (LED) test apparatus and method of manufacture
CN107731864B (zh) * 2017-11-20 2020-06-12 开发晶照明（厦门）有限公司 微发光二极管显示器和制作方法
WO2019225708A1 (ja) * 2018-05-25 2019-11-28 大日本印刷株式会社 表示装置用配線基板および表示装置、ならびに配線基板とその作製方法
JP7457255B2 (ja) * 2019-05-08 2024-03-28 日亜化学工業株式会社 画像表示装置の製造方法および画像表示装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102576739A (zh) * 2009-11-27 2012-07-11 夏普株式会社 薄膜晶体管及其制造方法、半导体装置及其制造方法以及显示装置
CN102822734A (zh) * 2010-04-16 2012-12-12 夏普株式会社 电子基板的制造方法、液晶显示装置的制造方法、电子基板以及液晶显示装置
US20160240561A1 (en) * 2015-02-16 2016-08-18 Kabushiki Kaisha Toshiba Semiconductor light emitting device
US20200127173A1 (en) * 2016-03-18 2020-04-23 Lg Innotek Co., Ltd. Semiconductor device and display device including the same
CN111223885A (zh) * 2018-11-27 2020-06-02 三星电子株式会社 显示装置和制造其的方法

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Publication number Publication date
WO2022059528A1 (ja) 2022-03-24
EP4216290A1 (en) 2023-07-26
US20230215907A1 (en) 2023-07-06
JPWO2022059528A1 (https=) 2022-03-24
TWI882173B (zh) 2025-05-01
JP7669643B2 (ja) 2025-04-30
TW202230311A (zh) 2022-08-01
EP4216290A4 (en) 2024-10-23

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